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- 2501. Appl. Phys. Lett. 65, 3320 (1994) , “Power saturation and the effect of argon on the electron spin resonance of diamond deposited from a microwave plasma”, P. B. Lukins and J. KhachanElectron spin resonance (ESR) of microwave plasma chemical vapor deposition diamond shows peaks associated with (i) a P1 substitutional nitrogen defect center, (ii) spin-spin interactions between the paramagnetic sites and neighboring protons, and (iii) a possible contribution from graphitic... (Read more)
- 2502. Appl. Phys. Lett. 65, 3260 (1994) , “Paramagnetic centers at and near the Si/SiOx interface in porous silicon”, B. Pivac, B. Rakvin, L. Pavesi.Formation of paramagnetic centers in aged porous silicon samples is studied by electron paramagnetic resonance. Samples oxidized by aging in air at room temperature exhibit the Pb centers as dominant defects. These are formed at the interfaces between the Si nanocrystallites... (Read more)
- 2503. Appl. Phys. Lett. 65, 2951 (1994) , “Nitrogen in the isotopically enriched 12C diamond”, S. Zhang, M. E. Zvanut, Y. K. Vohra, S. S. VagaraliAn electron paramagnetic resonance (EPR) characterization study of isotopically enriched 12C diamond grown by General Electric has been carried out. While other commonly used techniques detect no nitrogen in this diamond, the clear EPR spectrum consistently measured a nitrogen... (Read more)
- 2504. Appl. Phys. Lett. 65, 2287 (1994) , “Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy”, M. E. Zvanut, W. E. Carlos, J. A. Freitas, Jr., K. D. Jamison, R. P. HellmerAn electron paramagnetic-resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm 3 exhibit two isotropic lines of equal intensity separated... (Read more)
- 2505. Appl. Phys. Lett. 64, 1690 (1994) , “Temperature-dependent study of spin-dependent recombination at silicon dangling bonds”, D. Vuillaume, D. Deresmes, and D. StiévenardElectrical detection of magnetic resonance is used in a large temperature range (150350 K) to analyze the spin-dependent recombination properties of silicon dangling bonds at the Si-SiO2 interface (created by high-field electron injections) and of silicon dangling bond clusters in... (Read more)
- 2506. Appl. Phys. Lett. 64, 1091 (1994) , “Electron paramagnetic resonance forbidden transitions from hydrogen in polycrystalline diamond films”, S. H. Holder, L. G. Rowan, J. J. KrebsInvestigation of polycrystalline diamond films by electron paramagnetic resonance at 9.5 and 35 GHZ has revealed the presence of forbidden transitions resulting from a simultaneous microwave induced flipping of unpaired electron spins and environmental nuclear spins. The spacing of the resonance... (Read more)
- 2507. Diamond Relat. Mater. 4, 53 (1994) , “Slow emission of the 2.56 eV centre in synthetic diamond”, E. Pereira, L. Santos, L. Pereira, D. M. Hofmann, P. Christmann, W. Stadler and B. K. MeyerThe 2.56 eV luminescence band in synthetic diamond is studied in detail by time resolved photoluminescence and spin resonance measurements. The temperature dependence of the vibronic band shape indicates that between 2 and 20 K there is a noticeable change in relative intensities of the two dominant... (Read more)
- 2508. Hyperfine Interactions 84, 397 (1994) , “Studies of divacancy in Si using positron lifetime measurement ”, Studies of divacancy in Si using positron lifetime measurementThe charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V2 2-, V2 – and V2 0 at 300 K were about 6×10-14, 3×10-14 and 0.1–3×10-14 cm2, respectively. For V2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V2 0 and V2 2- have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V2 0 ) and 21 meV (V2 2- ). The appearance of a shallow level for V2 0 can not be explained by a conventional "Rydberg state" model. The lifetime (290–300 ps) in V2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V2 2- increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V2 2- is shorter than that in V2 0 at low temperature, which is due to the excess electron density in V2 2- . At high temperature, however, the longer lifetime of V2 2- than that of V2 0 is attributed to lattice relaxation around V2 2- . (Read more)
- 2509. J. Appl. Phys. 75, 7559 (1994) , “Observation of Cr3 + electron paramagnetic resonance center in GaAs co-doped with Cr and In”, Young Ju Park, Tae Ho Yeom, Suk-Ki Min, Il-Woo Park, Sung Ho ChohWe have observed a well-defined Cr3 + (3d3) electron paramagnetic resonance signal at 4 K in vertical gradient freeze semi-insulating GaAs single crystal through a co-doping with Cr and In. On the basis of analyzing the rotation pattern of the Cr3 + center,... (Read more)
- 2510. J. Appl. Phys. 75, 2929 (1994) , “Model for NL10 Thermal Donors Formed in Annealed Oxygen-Rich Silicon Crystals”, Akito Hara, Masaki Aoki, Masaaki Koizuka, and Tetsuo FukudaElectron spin resonance (ESR) studies have shown that NL10 thermal donors are formed in oxygen-rich silicon (Si) crystals after annealing. In initial NL10 formation stage, it has C2v symmetry with the principle g values g[100]=1.99982, g[01]=1.99799,... (Read more)
- 2511. J. Appl. Phys. 75, 1047-1058 (1994) , “Generation aspects of the delocalized intrinsic EX defect in thermal SiO2”, A. Stesmans and F. ScheerlinckA K-band electron-spin-resonance study of the appearance of the delocalized intrinsic EX center in dry thermal SiO2 was performed on (001) and (111) Si/SiO2. The defect is found in both structures in nearly identical spin densities, 1.2×1012... (Read more)
- 2512. J. Non-Cryst. Solids 179, 39-50 (1994) , “Paramagnetic resonance of E′-type centers in Si-implanted amorphous SiO2. Si29 hyperfine structure and characteristics of Zeeman resonances*1”, H. Hosono, H. Kawazoe, K. Oyoshi, S. TanakaElectron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)
- 2513. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 2514. J. Phys. Chem. Solids 55, 1353-1356 (1994) , “EPR of [FA]0 centres in zinc chalcogenides”, K. Tarkpea, A. Ots , V. Nikitenko[FA]0 centres in ZnO and ZnS single crystals have been detected by electron paramagnetic resonance. The [FA]0 centre consists of an anion vacancy with a localized electron and a monovalent substitutional impurity replacing an adjacent Zn2+ ion. This impurity is probably a Li+ ion in the case of ZnO... (Read more)
- 2515. J. Phys.: Condens. Matter 6, 801 (1994) , “EPR of radiation damage centres W11, W12, W13 and W14 in type Ib diamond”, J. A. van WykW11, W12, W13 and W14 are four paramagnetic defects with S=3/2 observed in electron or neutron irradiated type Ib diamonds. Although spin Hamiltonian parameters have been determined that describe the ESR results very well, it will be shown that the normal spin Hamiltonian with... (Read more)
- 2516. J. Phys.: Condens. Matter 6, 6721 (1994) , “A perturbed vacancy model for the R1 EPR centre in diamond”, J. E. Lowther, A. MainwoodRadiation damage produces many defects in diamond that are associated with lattice vacancies and interstitial atoms. EPR has proved to be a valuable tool in the characterization of such defects although often detailed models of the defect structure have not been attempted. It is shown that the R1... (Read more)
- 2517. J. Phys.: Condens. Matter 6, 551 (1994) , “13C, 14N and 15N ENDOR measurements on the single substitutional nitrogen centre (P1) in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the single substitutional nitrogen centre in diamond are reported. The CW-ENDOR mechanism utilizes cross relaxation, and measurements have been made on both 14N and 15N, as well as the first detailed 13C ENDOR study on the isotope at the... (Read more)
- 2518. Jpn. J. Appl. Phys. 33, L1374 (1994) , “Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam ”, Akira Uedono, Takao Kawano1, Shoichiro Tanigawa, Kazumi Wada2 and Hideo Nakanishi2Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the... (Read more)
- 2519. Jpn. J. Appl. Phys. 33, 1872 (1994) , “Temperature Dependence of ESR Lines Related to Phosphorus in Silicon”, M. Morooka, M. Tokita, T. Kato, I. Tsurumi.Temperature dependence of ESR in a silicon crystal containing 1.3×1017 phosphorus atoms/cm3 has been investigated at 4-40 K. The ESR signals depend strongly on the specimen temperature. Typical hyperfine structures of... (Read more)
- 2520. Mater. Lett. 19, 53-56 (1994) , “The effect of NiO doping on the stoichiometry of ZnO”, P. Lot'k, J. Lounek, L. Koudelka, L. Bene and E. ernokováThe additions of NiO (0–2.0 mol%) to ZnO result in a decrease of the parameter c of its crystal lattice and its high-frequency electrical conductivity and in an elimination of the ESR band with g = 1.96. The observed changes were ascribed to the formation of Zn1−xNixO solid solution,... (Read more)
- 2521. Mater. Sci. Forum 143-147, 1337 (1994) , “Electrically detected electron paramagnetic resonance”, S.Greulich-Weber
- 2522. Phys. Rev. B 50, 7365 (1994) , “S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance”, W. M. Chen, M. Singh, B. Monemar, A. Henry, E. Janzn, A. M. Frens, M. T. Bennebroek, J. Schmidt.We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR) at the X band and the K band. Two photoluminescence emissions arising from the bound-exciton (BE) recombination at the defect in two different configurations... (Read more)
- 2523. Phys. Rev. B 50, 5189 (1994) , “Theoretical investigation of the dynamic process of the illumination of GaAs”, Ren Guang-bao, Wang Zhan-guo, Xu Bo, Zhou BingThe dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usually ascribed to the existence of EL2 states and their photodriven metastable states. To understand the... (Read more)
- 2524. Phys. Rev. B 50, 2645 (1994) , “Magnetic-resonance studies of tellurium-doped AlxGa1xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 2525. Phys. Rev. B 50, 2645 (1994) , “Magnetic-rasonance studies of tellurium-doped AlxGa1-xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 2526. Phys. Rev. B 50, 17618 (1994) , “Acceptor level of substitutional Ni in diamond”, D. M. Hofmann, M. Ludwig, P. Christmann, D. Volm, B. K. Meyer, L. Pereira, L. Santos, E. PereiraSubstitutional Ni- in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the Ni- EPR signal can be diminished by optical illumination, and the threshold energy of 2.470.02 eV suggests that the... (Read more)
- 2527. Phys. Rev. B 50, 15586 (1994) , “EPR and 14N electron-nuclear double-resonance measurements on the ionized nearest-neighbor dinitrogen center in diamond”, O. D. Tucker, M. E. Newton, J. M. BakerThe nearest-neighbor substitutional nitrogen center [N-N]0 (A center), is one of the most common defects in natural diamond. [N-N]0 is diamagnetic and therefore cannot be studied by electron paramagnetic resonance (EPR). However, the [N-N]+ center is paramagnetic,... (Read more)
- 2528. Phys. Rev. B 50, 15449 (1994) , “EPR and ENDOR Study of the Pb Center in Porous Silicon”, V. Ya. Bratus, S. S. Ishchenko, S. M. Okulov, I. P. Vorona, H. J. von Bardeleben, M. Schoisswohl.The Pb center at the (111) Si-SiO2 interface has been studied with electron-nuclear-double-resonance (ENDOR) spectroscopy taking advantage of the high specific interface area of oxidized porous Si samples. The ENDOR spectrum consists only of two structureless lines at the... (Read more)
- 2529. Phys. Rev. B 50, 1511 (1994) , “Electric-Dipole Spin-Resonance Study on Extended Defects in Czochralski-Grown Silicon Developed by Thermal Treatment”, T. R. Mchedlidze, V. V. Kveder, J. Jablonski, and K. SuminoA series of electric-dipole spin-resonance (EDSR) lines, termed Si-SC1 lines, are found to develop in Czochralski-grown Si crystals due to annealing at 650 C. Some of these lines are very close to Si-2K and Si-3K reported in a previous work. The experimental data are self-consistently explained by... (Read more)
- 2530. Phys. Rev. B 50, 14710-14713 (1994) , “Defect-defect hole transfer and the identity of border traps in SiO2 films”, W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, R. A. B. DevineWe have found evidence for hole-transfer events between oxygen-vacancy-related defects in thermal SiO2 films selectively injected with holes using electron paramagnetic resonance (EPR) and capacitance-voltage measurements. We find that hole injection into SiO2 films reveals two... (Read more)
- 2531. Phys. Rev. B 49, 7964 (1994) , “Electron Paramagnetic Resonance of Iron- and Aluminum-Related Defects in Silicon”, K. Irmscher, T. Kind, and W. GehlhoffSilicon codoped with aluminum and iron is investigated by electron paramagnetic resonance. Three spectra of trigonal, two of orthorhombic and two of monoclinic symmetry are detected and interpreted as being associated with iron- and aluminum-related defects. Most of the spectra are known but the... (Read more)
- 2532. Phys. Rev. B 49, 16999 (1994) , “Distant Iron-Shallow-Donor Pairs in Silicon Detected by Electron Paramagnetic Resonance”, M. Hhne, U. Juda, H. Riemann, J. M. Spaeth, S. Greulich-Weber.The electron-paramagnetic-resonance transitions of isolated neutral interstitial iron (Fei0) in n-type silicon show a satellite structure, which is clearly detectable for donor concentrations (P or As, respectively) above 1015 cm-3. The satellite structure... (Read more)
- 2533. Phys. Rev. B 49, 16983 (1994) , “Electrical and thermal properties of structurally metastable iron-boron pairs in silicon ”, H. Nakashima, T. Sadoh, and T. TsurushimaStructurally metastable iron-boron pairs in silicon have been detected using dark- or photocapacitance transient techniques combined with minority-carrier injection below 200 K. Five levels at EC-0.43, 0.46, 0.52, and 0.54 eV and EV+0.53 eV are observed as the metastable... (Read more)
- 2534. Phys. Rev. B 49, 15392 (1994) , “g tensor for substitutional nitrogen in diamond”, S. Zhang, S. C. Ke, M. E. Zvanut, H. T. Tohver, Y. K. VohraWe report a measurement of an axially symmetric g tensor for the substitutional nitrogen center in type-IIa synthetic isopure 12C diamond. Because the nitrogen concentration of the diamond studied is exceptionally low the electron-paramagnetic-resonance linewidth is sufficiently narrow to... (Read more)
- 2535. Phys. Rev. B 49, 13423 (1994) , “EPR Spectroscopy of Platinum-Hydrogen Complexes in Silicon”, M. Hhne, U. Juda, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, L. S. Vlasenko.Two similar defects in silicon, resulting from doping with platinum in an atmosphere containing water vapor, were studied by means of electron paramagnetic resonance. Both spectra have effective electron spin S=1/2, and exhibit platinum- and hydrogen-related hyperfine structure and remarkable... (Read more)
- 2536. Phys. Rev. B 49, 11010 (1994) , “Strongly perturbed negative-vacancy-related centers in diamond”, J. E. Lowther and J. A. van WykSeveral related defect centers have been observed in synthetic and type-Ib diamond following electron or neutron irradiation. Such centers, termed W centers, have similar characteristic features in that all have a spin of S=3/2 and exhibit an extremely large zero-field splitting. Spin-Hamiltonian... (Read more)
- 2537. Phys. Rev. B 49, 10999 (1994) , “Ligand ENDOR on substitutional manganese in GaAs”, S. J. C. H. M. van Gisbergen, A. A. Ezhevskii, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional Mn2+ center in GaAs. On the basis of these experiments it is concluded that the Mn2+ center is substitutional on a Ga site. From the electron paramagnetic resonance... (Read more)
- 2538. Phys. Rev. B 49, 10307 (1994) , “Trigonal Manganese Cluster in Silicon: An Electron-Paramagnetic-Resonance Study”, J. Kreissl, W. Gehlhoff, H. Vollmer.Besides the known tetrahedral Mn40 cluster, a second Mn cluster is observed by electron paramagnetic resonance in high-resistivity silicon doped with manganese. The spectrum shows trigonal symmetry. The analysis of the fine structure and the hyperfine structure suggests that... (Read more)
- 2539. Phys. Rev. Lett. 73, 3419 (1994) , “Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling”, Y. Michael Cheng and Michael StavolaThe B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)
- 2540. Phys. Rev. Lett. 73, 1457 (1994) , “Stallinga, Gregorkiewicz, and Ammerlaan Reply”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanA drift instability due to electrons trapped in a series of shallow magnetic troughs has been observed and compared to theoretical estimates. The instability, identified as Kadomtsev's trapped-electron mode, is maximum at a density lower than estimated from the theory. (Read more)
- 2541. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 2542. Phys. Rev. Lett. 73, 130 (1994) , “Inverted order of acceptor and donor levels of monatomic hydrogen in silicon”, N. M. Johnson, C. Herring, and Chris G. Van de WalleThe acceptor level ɛA of monatomic hydrogen (2H) in crystalline silicon has been located at ɛA≊ɛm+0.00 eV, where ɛm is the midgap level, more than 0.3 eV below the recently identified donor level. Thus, hydrogen has a large negative... (Read more)
- 2543. Phys. Rev. Lett. 72, 2939 (1994) , “Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon”, A. M. Frens, M. T. Bennebroek, A. Zakrzewski, J. Schmidt, W. M. Chen, E. Janzn, J. L. Lindstrm, B. Monemar.Direct electron transfer is observed between two deep defects in silicon upon selective laser excitation with an energy lower than the band gap. This transfer is shown to be very efficient when one of the defects is a pseudodonor and the other is a dominant recombination center. It is argued that... (Read more)
- 2544. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 2545. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 2546. Rev.Mod.Phys 66, 841 (1994) , “Theory of positrons in solids and on solid surfaces ”, M. J. Puska and R. M. NieminenVarious experimental methods based on positron annihilation have evolved into important tools for researching the structure and properties of condensed matter. In particular, positron techniques are useful for the investigation of defects in solids and for the investigation of solid surfaces.... (Read more)
- 2547. Semicond. Sci. Technol. 9, 1623 (1994) , “Thermal Donors in Silicon: an Investigation of Their Structure with Electron Nuclear Double Resonance”, N. Meilwes, J. M. Spaeth, W. Gtz, G. Pensl.Singly ionized thermal double donors (TDD+), which have the so-called NL8 EPR spectrum, have been investigated with electron nuclear double resonance (ENDOR) in silicon doped with various acceptors (Al,B,In,Ga). No differences were detected in the ENDOR spectra and no signals due to any... (Read more)
- 2548. Semicond. Sci. Technol. 9, 1346 (1994) , “On the Nature and Structures of Different Heat Treatment Centres in n- and p-Type Silicon”, N. Meilwes, J. M. Spaeth, V. V. Emtsev, G. A. Oganesyan.Thermally induced defects in oxygen-rich silicon are the thermal donors (TDDS) and the so-called NL10 defects. These defects are formed by annealing at temperatures around 450 degrees C. Whereas the TDDS have a unique nature, some NL10 defects probably have different structures in differently doped... (Read more)
- 2549. Solid State Commun. 90, 401 (1994) , “Electron Paramagnetic Resonance Study of the NL51 Spectrum in Hydrogen-Implanted Silicon”, P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, Yu. V. Gorelkinskii.High-resistivity silicon samples have been implanted with hydrogen and deuterium (dose 5 × 1015 cm−2). After a short heat treatment at low temperatures (20 min at 380–540°C) several electron paramagnetic resonance (EPR) spectra could be detected upon illumination. The most... (Read more)
- 2550. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 2551. Appl. Phys. Lett. 63, 352 (1993) , “General expression for the electrically detected magnetic resonance signal from semiconductors”, Z. Xiong and D. J. MillerA general expression is obtained for the electrically detected magnetic resonance (EDMR) signal from semiconductors based on the electron-hole pair model. The expression is applicable for all values of the trapping, dissociation, and recombination rates of the levels involved. Measurements of the... (Read more)
- 2552. Appl. Phys. Lett. 63, 2673 (1993) , “Observation of optically detected magnetic resonance in GaN films”, E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaOptically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ~2.2 mT] with g=1.9515±0.0002 and... (Read more)
- 2553. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 2554. Appl. Phys. Lett. 62, 943 (1993) , “Cobalt self-diffusion during cobalt silicide growth”, M. Diale and C. Challens and E. C. ZinguThe flux of atoms during Si/Co interdiffusion has been investigated by means of thin tantalum marker layers imbedded in the deposited Co layer. The silicide phase CoSi is found to grow in the Si/CoSi/Co structure without any conversion of CoSi to Co2Si. Cobalt is found to be the dominant... (Read more)
- 2555. Appl. Phys. Lett. 62, 40-42 (1993) , “Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, J. F. Conley and P. M. LenahanExposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon... (Read more)
- 2556. Appl. Phys. Lett. 62, 273 (1993) , “Shallow Donor in Separation by Implantation of Oxygen Structures Revealed by Electric-Field Modulated Electron Spin Resonance”, K. Vanheusden and A. StesmansElectric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.330 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity... (Read more)
- 2557. Colloids and Surf. A 72, 161-164 (1993) , “Study of a paramagnetic center on an SiO-treated GaAs surface”, G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen , W. L. WarrenWe have observed enhanced photoluminescence and an isotropic, singlet electron paramagnetic resonance (EPR) signal from samples of SI c-GaAs as a result of a thermal annealing treatment with SiO under vacuum. The treated samples showed a tenfold increase in photoluminescence. The EPR signal was... (Read more)
- 2558. IEEE Transactions on Electron Devices 40, 986-993 (1993) , “Correlation of Stress-Induced Leakage Current in Thin Oxides with Trap Generation Inside the Oxides”, D. J. Dumin, J. R. Maddux
- 2559. J. Appl. Phys. 74, 5901-5903 (1993) , “The nature of donor conduction in n-GaN”, M. Asif Khan, D. T. Olson, J. N. Kuznia, W. E. Carlos, J. A. Freitas, JrSingle crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)
- 2560. J. Appl. Phys. 74, 275-283 (1993) , “Characterization and depth profiling of E' defects in buried SiO2”, K. Vanheusden and A. StesmansOxygen-vacancy defects (E) generated at the surface of buried SiO2 (BOX) layers formed by O + implantation during the separation by implantation of oxygen process have been studied by electron spin resonance at 4.3 K. The E generation tool used was exposure to a... (Read more)
- 2561. J. Appl. Phys. 73, 8519 (1993) , “Generation Mechanisms of Paramagnetic Centers by Gamma-Ray Irradiation at and near the Si/SiO2 Interface”, K. Awazu, K. Watanabe, H. Kawazoe.Pb (·SiSi3) and E (·SiO3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes... (Read more)
- 2562. J. Appl. Phys. 73, 1797 (1993) , “Magnetic Resonance Spectroscopy in Silver-Doped Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn silver-doped silicon, several new electron paramagnetic resonance spectra were observed. Three of these, labeled Si-NL45, Si-NL46, and Si-NL47, were detected in n-type samples. The spectra have trigonal symmetry; the effective electron spin value S equals 1/2. The spectra Si-NL45... (Read more)
- 2563. J. Catalysis 140, 585-600 (1993) , “Studies of Gas Adsorption on ZnO Using ESR, FTIR Spectroscopy, and MHE (Microwave Hall Effect) Measurements”, Na B. K., Walters A. B. and Vannice M. A.This paper describes the application of a new technique-Microwave Hall Effect (MHE) measurements-to measure electron mobilities and to determine the effect of adsorption on electron densities of powders. Conduction electron densities calculated from microwave measurements of both mobilities and... (Read more)
- 2564. J. Opt. Soc. Am. B 10, 913 (1993) , “Raman-heterodyne-detected nonlinear susceptibility with an arbitrary radio-frequency field strength”, X. -F. He, P. T. H. Fisk, N. B. MansonRaman-heterodyne-detected complex nonlinear susceptibility has been measured and analyzed in detail with a radio-frequency field strength varying from weak to strong. The experiments were carried out on the nitrogen-vacancy color center in diamond involving both nuclear magnetic resonance and electron paramagnetic resonance transitions. The dispersive and the absorptive components of the nonlinear susceptibility are shown to have different saturation behaviors, and an anomalous-amplitude line shape arises where the dispersion component dominates in the response spectrum at high RF powers. The experimental results are found to be in good agreement with theoretical profiles, where no adjustable parameter is included in the calculation. (Read more)
- 2565. J. Phys.: Condens. Matter 5, 7929 (1993) , “The R2 EPR centre and 1.685 eV absorption line in diamond”, A. Mainwood, J. E. Lowther, J. A. van WykThe R2 EPR centre and 1.685 eV zero-phonon line seen in the optical absorption spectrum of diamond. have been shown to correlate in intensity and are believed to be associated with the same defect. We propose that the defect responsible is a highly strained vacancy, the origin of strain possibly... (Read more)
- 2566. J. Phys.: Condens. Matter 5, 3019 (1993) , “ENDOR of the P2 centre in type-Ia diamonds”, J. A. van Wyk, J. H. N. LoubserThe P2 centre was the first defect observed in diamond with electron spin resonance. Because of a very complicated ESR spectrum many years elapsed before the correct model was determined. Accurate spin Hamiltonian parameters have been determined from extensive ENDOR measurements at room temperature.... (Read more)
- 2567. Jpn. J. Appl. Phys. 32, L1715 (1993) , “Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy ”, Yoichi Kamiura*1, Yutaka Uno*2 and Fumio HashimotoCarbon-rich Czochralski Si shows anomalously rapid annihilation for all the species of thermal double donors at 470°C in two stages, which have good time correlations with the decrease of substitutional carbon density and also with the formation of two kinds of carbon-related new donors which... (Read more)
- 2568. Microelectron. Eng. 22, 143 (1993) , “An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface”, M. Lannoo, D. Vuillaume, D. Deresmes , D. StivenardWe propose an improved theory of the spin dependent recombination at defects in p-n junctions. This theory accounts for the experimental observations on the Pb center at the Si-SiO2 interface. (Read more)
- 2569. Phys. Lett. A 178, 205-208 (1993) , “A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs”, Y. Q. JiaH. J. von BardelebenElectron spin resonance studies of p-type ([Zn] = 7 × 1017 cm−3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm−1, the highest among those reported in electron- irradiated GaAs. We... (Read more)
- 2570. Phys. Rev. B 48, 4437 (1993) , “Identification of the BiGa heteroantisite defect in GaAs:Bi”, M. Kunzer, W. Jost, U. Kaufmann, H. M. Hobgood, R. N. ThomasGaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been... (Read more)
- 2571. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 2572. Phys. Rev. B 48, 17878-17884 (1993) , “Electron-spin-resonance studies of donors in wurtzite GaN”, W. E. Carlos, J. A. Freitas Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaElectron-spin-resonance (ESR) measurements have been performed on a series of wurtzite GaN films grown on sapphire substrates by low-pressure metal-organic chemical-vapor deposition. The sample set included films grown with both AlN and GaN buffer layers. The ESR signal results from residual donors... (Read more)
- 2573. Phys. Rev. B 48, 17595 (1993) , “Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films”, H. Jia, J. Shinar, D. P. Lang, M. PruskiThe X-band ESR of thin diamond films deposited from a mixture of 99.5% H2 and 0.5% CH4 is compared to those of films similarly prepared from D2-CD4 and H2-13CH4 mixtures. The main line and the satellites at 7.2 G are... (Read more)
- 2574. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
- 2575. Phys. Rev. B 47, 8816 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. II. Hyperfine interaction with the 14N nucleus”, X. -F. He, N. B. Manson, P. T. H. FiskHyperfine interactions associated with the 14N nucleus in the diamond N-V defect have been investigated using Raman-heterodyne techniques. The measured nuclear-magnetic-resonance (NMR) and electron-nuclear-double-resonance frequencies were well accounted for by the triplet-spin... (Read more)
- 2576. Phys. Rev. B 47, 8809 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. I. Level anticrossing in the 3A ground state”, X. -F. He, N. B. Manson, P. T. H. FiskRaman-heterodyne-detected paramagnetic resonance has been used to study the level anticrossing in the 3A state of the N-V defect in diamond. The electron-paramagnetic-resonance (EPR) frequencies are well accounted for by a triplet-spin Hamiltonian. Comparison of the EPR spectra with the... (Read more)
- 2577. Phys. Rev. B 47, 7025 (1993) , “Electron-Paramagnetic-Resonance Investigation of the Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA defect consisting of a substitutional indium and an interstitial iron ion in silicon has been studied using the electron-paramagnetic-resonance (EPR) technique. The defect is found to appear in two different configurations, where the iron ion occupies two different interstitial positions near the... (Read more)
- 2578. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 2579. Phys. Rev. B 47, 3987 (1993) , “Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance”, K. Krambrock and J.-M. SpaethThe microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga... (Read more)
- 2580. Phys. Rev. B 47, 3620-3625 (1993) , “{H,B}, {H,C}, and {H,Si} pairs in silicon and germanium”, Dj. M. Maric, P. F. Meier, S. K. EstreicherThe interactions between interstitial H and substitutional B, C, and Si in crystalline silicon and germanium are studied in molecular clusters at the ab initio Hartree-Fock level with large basis sets. The energetics, electronic structures, and relative stabilities of these pairs are determined. Our... (Read more)
- 2581. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 2582. Phys. Rev. Lett. 71, 557 (1993) , “Bond-Centered Muonium in Diamond: Resolved Nuclear Hyperfine Structure”, J. W. Schneider, R. F. Kiefl, K. H. Chow, S. Johnston, J. Sonier, T. L. Estle, B. Hitti, R. L. Lichti, S. H. Connell, J. P. E. Sellschop, C. G. Smallman, T. R. Anthony, W. F. BanholzerThe nuclear hyperfine structure of bond-centered muonium in 13C enriched diamond has been resolved using time-differential transverse-field muon spin rotation. The measured nearest-neighbor 13C hyperfine parameters are compared to theoretical values from a recent ab initio... (Read more)
- 2583. Phys. Rev. Lett. 71, 117 (1993) , “Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanIn briefly annealed silicon samples implanted with hydrogen and deuterium an electron paramagnetic resonance spectrum is detected. It is identified as arising from a hydrogen molecule oriented in the ?111? crystallographic direction and located most probably at an interstitial site. Such a result is... (Read more)
- 2584. Phys. Rev. Lett. 70, 3816 (1993) , “Structure-Sensitive Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon”, P. M. Williams, G. D. Watkins, S. Uftring, and Michael StavolaSeveral centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a... (Read more)
- 2585. Phys. Rev. Lett. 70, 1723 (1993) , “Relationship between Stress and Dangling Bond Generation at the (111)Si/SiO2 Interface”, A. Stesmans.Electron spin resonance analysis of the intrinsic density [Pb] of interfacial Pb (?Si?Si3) defects in thermal (111)Si/SiO2 as a function of oxidation temperature Tox in the range 2001140C reveals a close linear correlation with the average... (Read more)
- 2586. Physica B 185, 228-233 (1993) , “Study of defects in wide band gap semiconductors by electron paramagnetic resonance”, M. Fanciulli, T. D. MoustakasDefects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3–5 Gauss and spin-lattice relaxation time, at 293 K, of 10-6 s. In... (Read more)
- 2587. Semicond. Sci. Technol. 8, 2037 (1993) , “Generation of thermal donors in silicon: oxygen aggregation controlled by self-interstitials”, V V VoronkovThe analysis of kinetic data on thermal donors (TDS) leads to a general model of oxygen aggregation: the aggregates which arise differ not only in size but also in the number of emitted self-interstitials, m. Each line of aggregates-of a particular m-may contain a TD family. The well known family of... (Read more)
- 2588. Semicond. Sci. Technol. 8, 1385-1392 (1993) , “Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode”, B. Stich , S. Gruelich-Weber , J.-M. Spaeth , H. Overhof
- 2589. Solid State Commun. 88, 887-889 (1993) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs and G. H. StaussA. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a sub- millimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g= 2.04 ± 0.01 at v=11.236cm-1. The hyperfine interaction parameter |A| (I=3/2) is 0.090 ± 0.001 cm-1.The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP. (Read more)
- 2590. Appl. Phys. Lett. 61, 2887-2889 (1992) , “Identification of an interface defect generated by hot electrons in SiO2”, J. H. Stathis and D. J. DiMariaHot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known Pb0 center. We... (Read more)
- 2591. Appl. Phys. Lett. 61, 2569 (1992) , “Spin-dependent effects in porous silicon”, M. S. Brandt and M. StutzmannLuminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the... (Read more)
- 2592. Appl. Phys. Lett. 60, 718 (1992) , “Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers”, H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, E. H. PoindexterArsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (~200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band... (Read more)
- 2593. Appl. Phys. Lett. 60, 610 (1992) , “Electrically detected magnetic resonance of a transition metal related recombination center in Si p–n diodes”, F. C. Rong, G. J. Gerardi, W. R. Buchwald, E. H. Poindexter, M. T. Umlor, D. J. Keeble, W. L. WarrenA hyperfine structure has been observed by electrically detected magnetic resonance from a Si pn diode. From the hyperfine splitting, and the natural abundance of the interacting I=1/2 nuclear species, the recombination center is found to be consistent with a platinum... (Read more)
- 2594. Appl. Phys. Lett. 60, 1857 (1992) , “Spin Dependent Recombination in Pt-Doped Silicon p-n Junctions”, P. Christmann, C. Wetzel, B. K. Meyer, A. Asenov, A. Endrs.Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep... (Read more)
- 2595. J. Appl. Phys. 72, 520-524 (1992) , “Deep levels of vanadium and vanadium-hydrogen complex in silicon”, T. Sadoh, H. Nakashima, and T. TsurushimaDeep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and... (Read more)
- 2596. J. Appl. Phys. 72, 3095 (1992) , “Complexing in Silicon Induced by Surface Reactions: Electron Paramagnetic Resonance Detection of a 6-Platinum Cluster”, M. Höhne and U. JudaComplexing of 5dn impurities from supersaturated solutions in silicon occurs during thermal processing at intermediate temperatures subsequent to fast or retarded quenching. Doping of silicon with 5dn transition-metal ions in a wet... (Read more)
- 2597. J. Appl. Phys. 72, 211 (1992) , “Autler–Townes effect of the photoexcited diamond nitrogen-vacancy center in its triplet ground state”, Xing-Fei He, Peter T. H. Fisk, and Neil B. MansonThe AutlerTownes effect in nuclear magnetic resonance (NMR) and electron paramagnetic resonance has been observed using recently developed Raman heterodyne techniques. The measurements were carried out on the nitrogen-vacancy color center in diamond, where the 3A"... (Read more)
- 2598. J. Appl. Phys. 71, 4615 (1992) , “Paramagnetic defects in neutron-irradiated GaP”, T. Benchiguer, A. Goltzené, B. Mari, and C. SchwabAiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum... (Read more)
- 2599. J. Lumin. 53, 88 (1992) , “Frequency-dependent dephasing of N-V centers in diamond”, Eric van Oort and Max GlasbeekIn this paper, we report on high-resolution magneto-optical double-resonance experiments on the 3A →3E zero-phonon line (ZPL) transition of the N-V center in diamond. It is demonstrated that hole burning of the ZPL absorption (at 637 nm) is achieved by resonant microwave excitation of the... (Read more)
- 2600. J. Lumin. 53, 49 (1992) , “Raman heterodyne studies of the nitrogen-vacancy centre in diamond”, Neil B. Manson, Xing-Fei He and Peter T. H. FiskThe Raman heterodyne detected EPR and NMR frequencies associated with the nitrogen-vacancy centre in diamond are found to be consistent with those for a spin-triplet ground state with the following spin-Hamiltonian parameters g = 2.0028, gn = 0.4036, D = 2.88 GHz, |A||| = 2.3 MHz, |A| = 2.1 MHz and... (Read more)
- 2601. J. Non-Cryst. Solids 149, 137-160 (1992) , “Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide”, David L. GriscomThe electron spin resonance spectra of radiation-induced self-trapped holes (STHs) in amorphous silicon dioxide are isolated by isochromal annealing experiments and computer simulation analyses. Two distinct components, denoted STH1 and STH2 (plus a third component intermediate between the two),... (Read more)
- 2602. J. Opt. Soc. Am. B 9, 768 (1992) , “Origin of persistent hole burning of N-V centers in diamond”, D. Redman, S. Brown, S. C. RandNew satellite features and antiholes in the persistent hole-burning spectrum of N–V centers in diamond, as well as their dependences on applied electric fields and frequency within the inhomogeneous absorption line, are reported. These results, together with reassignments of spin states of this center, permit an understanding of the origin of the satellite holes as well as of possible mechanisms for the persistent hole-burning phenomenon itself. In addition we report narrow optical interference fringes in heterodyne-detected spectra of persistent spectral holes in the N–V defect center in diamond and discuss a recent suggestion for high-resolution Ramsey-fringe hole-burning spectroscopy of solids based on phase-separated fields. (Read more)
- 2603. J. Phys.: Condens. Matter 4, 8119 (1992) , “ENDOR studies on the N1 di-nitrogen centre in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the N1 centre confirm the N-C-N+ model for the defect. The N+ is in a substitutional site with approximately tetrahedral symmetry. The N-C fragment of the centre resembles the P1 centre, with slightly larger unpaired electron density on the nitrogen,... (Read more)
- 2604. J. Phys.: Condens. Matter 4, 2651 (1992) , “ENDOR and high-temperature EPR of the N3 centre in natural type Ib diamonds”, J. A. van Wyk, J. H. N. Loubsert, M. E. Newton, J. M. BakerThe N3 is a single paramagnetic electron centre observed in type Ib diamonds. It has monoclinic symmetry below 200 degrees C and becomes axially symmetric at higher temperatures. It displays an unusual hyperfine structure which is shown to be from a single 14N nucleus. The... (Read more)
- 2605. Mater. Sci. Forum 83-87, 1165-1170 (1992) , “Spin dependent recombination at deep centers in Si - electrically detected magnetic resonance”, P. Christmann , M. Bernauer , C. Wetzel , A. Asenov , B. K. Meyer , A. Endros
- 2606. Phys. Rev. B 46, 5303 (1992) , “Cross-relaxation effects in the 2.818-eV zero-phonon emission in brown diamond”, I. Hiromitsu, J. Westra, and M. GlasbeekIn brown diamond, the long-lived emission at 2.818 eV is known to be due to a localized center in the photoexcited triplet state. In this paper, the emission intensity of the 2.818-eV center is studied as a function of the strength of an externally applied magnetic field. The cross-relaxation (CR)... (Read more)
- 2607. Phys. Rev. B 46, 4582 (1992) , “Aluminum Incorporation in the Si-NL10 Thermal Donor”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe role of aluminum dopants in the creation and properties of the Si-NL10 center was investigated by means of electron-nuclear-double-resonance techniques. At least 10 different Si-NL10 species were identified, and their generation kinetics were studied in detail. Possible transformation mechanisms... (Read more)
- 2608. Phys. Rev. B 46, 4544 (1992) , “Electron-Paramagnetic-Resonance Identification of Silver Centers in Silicon”, N. T. Son, V. E. Kustov, T. Gregorkiewicz, and C. A. J. AmmerlaanThe observation of silver in silicon by electron paramagnetic resonance (EPR) is reported. In p-type silicon doped with silver, several EPR spectra were detected. Three of these, which are labeled Si-NL42, Si-NL43, and Si-NL44, exhibit hyperfine structure with splitting into two components of equal... (Read more)
- 2609. Phys. Rev. B 46, 4312 (1992) , “Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon ”, W. Gtz and G. Pensl and W. ZulehnerThermal donors (TDs) are generated in Czochralski (CZ) -grown silicon by heat treatments at temperatures around 470 °C. They form a family of individual species with differing ionization energies and act as double donors (TDx0, TDx+). Up to 11 species are already known. We... (Read more)
- 2610. Phys. Rev. B 46, 1882 (1992) , “Charge-State-Dependent Activation Energy for Diffusion of Iron in Silicon”, H. Takahashi, M. Suezawa, and K. SuminoPrecipitation of neutral iron (Fe0) in n-type silicon (Si) and the generation of iron-acceptor pairs controlled by diffusion of positively charged iron (Fe+) in p-type Si are investigated by means of electron spin resonance (ESR). The temperature range in which the diffusion of... (Read more)
- 2611. Phys. Rev. B 46, 12335 (1992) , “Microscopic mechanism of atomic diffusion in Si under pressure ”, Osamu Sugino and Atsushi OshiyamaWe have performed the first-principles total-energy calculations on the atomic diffusion of group-V impurities in Si, and have revealed the pressure effect on the activation energy of the diffusion. For the vacancy mechanism, the activation energies for P, As, and Sb decrease with pressure. For the... (Read more)
- 2612. Phys. Rev. B 46, 12316 (1992) , “Zero-Field Optical Detection of Magnetic Resonance on a Metastable Sulfur-Pair-Related Defect in Silicon: Evidence for a Cu Constituent”, A. M. Frens, M. T. Bennebroek, J. Schmidt, W. M. Chen, B. Monemar.A metastable complex defect in S-doped silicon has been studied with zero-field optically-detected magnetic-resonance (ODMR) spectroscopy. The defect shows two characteristic photoluminescence (PL) spectra SA and SB, corresponding to two different geometric configurations 1 and... (Read more)
- 2613. Phys. Rev. B 46, 12266-12277 (1992) , “Measurement of the effect of pretreatment and adsorption on the electrical properties of ZnO powders using a microwave-Hall-effect technique”, Byung-Ki Na, M. Albert Vannice, Arden B. WaltersMicrowave-Hall-effect (MHE) and electrical conductivity measurement techniques can now be used to obtain absolute values of the electrical properties of semiconductor powders under different controlled conditions. A commercial ESR spectrometer was modified to conduct MHE experiments and a network... (Read more)
- 2614. Phys. Rev. B 46, 10600 (1992) , “Cross-relaxation dynamics of the N-V center in diamond as studied via optically detected microwave recovery transients”, I. Hiromitsu, J. Westra, M. GlasbeekThe N-V center in diamond is a nitrogen-vacancy pair defect with an electronic triplet spin ground state. Upon optical excitation and in the presence of an applied magnetic field, two subensembles of N-V centers with different spin temperatures are created at liquid-helium temperatures. For certain... (Read more)
- 2615. Phys. Rev. B 45, 9501-9504 (1992) , “New intrinsic defect in as-grown thermal SiO2 on (111)Si”, A. StesmansK-band electron-spin resonance (ESR) has revealed an isotropic signal of g=2.002 460.000 03 in as-prepared SiO2 thermally grown on (111)Si in dry O2 at 700860C. The spectrum comprises a symmetric central signal of peak-to-peak width ??pp=1.0 G amid a... (Read more)
- 2616. Phys. Rev. B 45, 5933 (1992) , “Magnetic circular dichroism of the DX center in Al0.35Ga0.65As:Te”, R. E. Peale, Y. Mochizuki, H. Sun, G. D. WatkinsMagneto-optical absorption spectra of 0.4-mm-thick, single-crystal Al0.35Ga0.65As:Te give evidence for two bleachable absorbers, one of which is identified as the DX center. The bleached-state absorption coefficient and magnetic circular dichroism (MCD), measured from 0.66 to... (Read more)
- 2617. Phys. Rev. B 45, 5883 (1992) , “Electron Paramagnetic Resonance of a Platinum Pair Complex in Silicon”, M. Hhne.EPR measurements of hydrogen-treated Si:Pt single crystals reveal a pair of equivalent Pt ions on next-nearest-neighbor sites. The g values and hyperfine parameters differ essentially from those of a previously detected Pt pair center; therefore, an additional constituent in at least one of the... (Read more)
- 2618. Phys. Rev. B 45, 5699 (1992) , “Optical detection of magnetic resonance in the photoexcited triplet state of a deep center in diamond”, J. Westra, R. Sitters, and M. GlasbeekFrom an optically detected magnetic resonance study of the 2.818-eV zero-phonon emission in brown diamond, direct evidence for the existence of a photoexcited phosphorescent triplet state in diamond has been obtained. The emission is attributed to a deep-center triplet state with spin-Hamiltonian... (Read more)
- 2619. Phys. Rev. B 45, 4344 (1992) , “Dipolar Interaction between [111] Pb Defects at the (111)Si/SiO2 Interface Revealed by Electron-Spin Resonance”, G. Van Gorp, A. Stesmans.A method is outlined to vary reproducibly the density of [111] Pb centers (?Si?Si3 defects with an unpaired sp3 orbital perpendicular to the interface) at the thermal (111)Si/SiO2 interface (grown at ?920 C; 1.1 atm O2) using alternate nonIin... (Read more)
- 2620. Phys. Rev. B 45, 4122 (1992) , “First-principles study of fully relaxed vacancies in GaAs”, K. Laasonen, R. M. Nieminen, and M. J. PuskaThe structural and electronic properties of vacancies in GaAs have been studied using ab initio molecular dynamics. The atomic structures of vacancies in different charge states have been optimized by using a simulated-annealing procedure. The neighbor-atom relaxations are modest for neutral, singly... (Read more)
- 2621. Phys. Rev. B 45, 3372 (1992) , “Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy”, H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, C. E. StutzElectron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The... (Read more)
- 2622. Phys. Rev. B 45, 3349 (1992) , “Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb”, P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler, U. KaufmannIn an investigation of GaAs doped with Sb to a concentration of ≊1×1019 cm-3, the electron-paramagnetic-resonance (EPR) signal of the SbGa heteroantisite defect has been optically detected by monitoring the microwave-induced changes in the... (Read more)
- 2623. Phys. Rev. B 45, 3287 (1992) , “Vacancy-Model Interpretation of EPR Spectrum of Si:Pt-”, F. G. Anderson, F. S. Ham, G. D. Watkins.The vacancy model for platinum in silicon as proposed by Watkins postulates a neutral Pt atom in the 5d10 electronic configuration occupying a negatively charged lattice vacancy, so that electronic properties of Pt- should be similar to those of the isolated vacancy... (Read more)
- 2624. Phys. Rev. B 45, 3279 (1992) , “EPR Investigation of Pt- in Silicon”, F. G. Anderson, R. F. Milligan, G. D. Watkins.Using EPR we have resolved the question of whether the dominant Pt- defect in silicon consists of an isolated platinum ion or a platinum-platinum pair. We have measured the uniaxial-stress-induced shifts in the g values and find that the stress-coupling tensor shows the defect symmetry to... (Read more)
- 2625. Phys. Rev. B 45, 1645 (1992) , “Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs”, Y. Q. Jia, H. J. von Bardeleben, D. Stievenard, C. DelerueWe report an observation by electron paramagnetic resonance (EPR) of the gallium vacancy defect in GaAs. The defect is observed after electron irradiation of p-type GaAs. The gallium vacancy defect shows trigonal symmetry; its spin-Hamiltonian parameters are determined as S=1/2,... (Read more)
- 2626. Phys. Rev. B 45, 1436 (1992) , “EPR identification of the negatively charged vacancy in diamond”, J. Isoya, H. Kanda, Y. Uchida, S. C. Lawson, S. Yamasaki, H. Itoh, Y. MoritaElectron-paramagnetic-resonance and electron-nuclear-double-resonance (ENDOR) methods are used to identify the negatively charged state of the isolated vacancy in electron-irradiated synthetic diamond crystals. The Td symmetry is confirmed by determining the arrangement of both nearest... (Read more)
- 2627. Phys. Rev. B 45, 13745 (1992) , “Validity of the broken-bond model for the DX center in GaAs”, Mineo Saito, Atsushi Oshiyama, Osamu SuginoThe validity of the broken-bond model for the DX center is examined by performing supercell calculations within the local-density approximation for column-IV donors in GaAs. We confirm that the broken-bond geometry is the most stable among the atomic structures accompanied with large lattice... (Read more)
- 2628. Phys. Rev. B 45, 11612 (1992) , “Theoretical studies on the core structure of the 450 °C oxygen thermal donors in silicon”, Peter Dek and Lawrence C. Snyder and James W. CorbettResults of molecular- and cyclic-cluster calculations using semiempirical Hamiltonians on a wide range of small oxygen complexes in crystalline silicon are reported. It is shown that a core involving (at most) two oxygens and a self-interstitial can explain the observed behavior of the... (Read more)
- 2629. Phys. Rev. Lett. 69, 3185 (1992) , “Paramagnetic State of the Isolated Gold Impurity in Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanThe paper reports on the observation of the electron paramagnetic resonance spectrum of the isolated substitutional gold impurity in silicon. The spectrum has orthorhombic I (C2v) symmetry and an effective spin S=1/2. It has been detected in silver-doped samples with gold being introduced... (Read more)
- 2630. Phys. Rev. Lett. 69, 1580 (1992) , “Linear Stark and Nonlinear Zeeman Coupling to the Ground State of Effective Mass Acceptors in Silicon”, Andreas Kpf and Kurt LassmannIt is shown by dielectric resonance absorption at 60 GHz that there is a linear coupling of the electric field to the ground state of effective mass acceptors in Si reflecting the lower Td symmetry in the central portion of the ground-state wave function. The coupling increases strongly... (Read more)
- 2631. Phys. Rev. Lett. 68, 1582 (1992) , “Breathing-Mode Relaxation Associated with Electron Emission and Capture Processes of EL2 in GaAs”, G. A. Samara, D. W. Vook, J. F. GibbonsAnalysis of the effects of hydrostatic pressure on the electronic emission and capture properties of the (0/+) and (+/++) deep levels of the EL2 defect in GaAs leads to the following conclusions: (1) Both levels move higher in the band gap with pressure; (2) relatively large inward (outward) lattice... (Read more)
- 2632. Rev. Sci. Instrum. 63, 5742 (1992) , “Sensitive electron paramagnetic resonance spectrometer for studying defects in semiconductors”, H. E. Altink, T. Gregorkiewicz, and C. A. J. AmmerlaanThe construction of a state-of-the-art electron paramagnetic resonance spectrometer for application to the studies of defects in semiconductors is described. The spectrometer is of superheterodyne type with low-frequency modulation of the magnetic field and working in dispersion. The use of a... (Read more)
- 2633. Rev. Sci. Instrum. 63, 4251 (1992) , “Saturation recovery electron paramagnetic resonance spectrometer”, Richard W. Quine, Sandra S. Eaton, and Gareth R. EatonA versatile saturation recovery accessory based on a small, special-purpose timing controller and an efficient mix of coaxial and waveguide microwave components has been added to a commercial electron paramagnetic resonance (EPR) spectrometer. The spectrometer was designed for study of the spin... (Read more)
- 2634. Appl. Phys. A 53, 147 (1991) , “Iron-Aluminum Pairs in Silicon”, S. Greulich-Weber, A. Grger, J. M. Spaeth, H. Overhof.Iron-aluminum pairs in silicon are investigated with conventional and optically detected electron paramagnetic resonance (EPR). For the trigonal and orthorhombic pairs known from previous EPR measurements we found for the first time optical absorption bands by measuring their magnetic circular dichroism of the absorption (MCDA). Direct experimental evidence is presented for the configurational bistability of both pairs by showing that the MCDA of the trigonal configuration can be transformed into that of the orthorhombic configuration by the combined effect of light and temperature. A new trigonal pair was discovered by conventional EPR having the same EPR intensity as the known one. Total energy calculations of various (Fei-Als) pair configurations show that two trigonal (Fei-Als)0 pairs with different Fei-Als separations have almost the same binding energy and should occur with the same probability. Fei + is always on a tetrahedral interstitial site, while Als - is nearest neighbor along <111> in one pair, second nearest neighbor in the other one with one silicon lattice site in between. (Read more)
- 2635. Appl. Phys. Lett. 59, 3165 (1991) , “Hydrogen diffusivities below room temperature in silicon evaluated from the photoinduced dissociation of hydrogen–carbon complexes”, Yoichi Kamiura, Minoru Yoneta, and Fumio HashimotoWe have evaluated hydrogen and deuterium diffusivities in silicon below room temperature (220–270 K) by analyzing the kinetics of photoinduced dissociation of a chemical etching introduced hydrogen (deuterium)–carbon complex. Under sufficiently strong illumination, the annihilation rate... (Read more)
- 2636. Appl. Phys. Lett. 59, 2281 (1991) , “Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center”, F. C. Rong, W. R. Buchwald, M. Harmatz, E. H. Poindexter, W. L. WarrenArsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for... (Read more)
- 2637. Appl. Phys. Lett. 59, 1890 (1991) , “New Carbon Related Defects Formed in Nitrogen Rich Czochralski Silicon Crystals”, Akito Hara and Akira OhsawaWe studied some electrical properties of silicon crystals containing carbon, nitrogen, and oxygen. Nitrogen-oxygen complexes are formed in nitrogen- and oxygen-rich silicon crystals. However, we found that carbon suppresses the formation of nitrogen-oxygen complexes. Moreover, new shallow... (Read more)
- 2638. Appl. Phys. Lett. 59, 1870 (1991) , “Paramagnetic nitrogen in chemical vapor deposition diamond thin films”, M. Hoinkis, E. R. Weber, M. I. Landstrass, M. A. Plano, S. Han, D. R. KaniaElectron-paramagnetic-resonance (EPR) studies demonstrate the presence of nitrogen point defects in microwave-assisted chemical vapor deposition (CVD) diamond thin films. Polycrystalline powder pattern EPR spectra are interpreted with g=2.0023, A=114.0 MHz, and... (Read more)
- 2639. Appl. Phys. Lett. 58, 502 (1991) , “Photoluminescence and magnetic resonance studies of Er3 + in MeV ion-implanted GaAs”, P. B. Klein, F. G. Moore, and H. B. DietrichThe effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3 + electron paramagnetic resonance (EPR) signal as well as the Er3 + and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3... (Read more)
- 2640. Appl. Phys. Lett. 58, 370 (1991) , “Interstitial oxygen determination near epitaxial silicon and Czochralski silicon interface”, M. Geddo, B. Pivac, A. Borghesi, and A. Stella and M. PedrottiThe oxygen content near epitaxial layer-substrate silicon interface was investigated using a micro Fourier transform infrared technique. Systematic measurements, performed in a transversal wafer cross-section configuration, clearly indicated the presence of interstitial oxygen in the epitaxial layer... (Read more)
- 2641. Appl. Phys. Lett. 58, 2144 (1991) , “Electron Paramagnetic Resonance of a Multistable Inaterstitial-Carbon-Substitutional-Phosphorus Pair in Silicon”, X. D. Zhan and G. D. WatkinsTwo new electron paramagnetic resonance centers are reported, Si-L8 and Si-L9, which are identified with the stable and one of the four metastable configurations, respectively, of a multistable defect recently discovered by deep level transient capacitance spectroscopy in electron-irradiated... (Read more)
- 2642. Appl. Phys. Lett. 58, 1742 (1991) , “Electron spin resonance study of laser-annealed (Zn,Mn)O ceramics”, Katsuyasu Kawano, Ryouhei Nakata, and Minoru SumitaInvestigations have been made on the effects of pulse laser annealing on the ceramics (Zn,Mn)O by means of electron spin resonance (ESR) measurements. A remarkable change in the ESR spectrum was observed after annealing by a Nd:YAG pulse laser (=1.064 µm, 57 J/cm2). It... (Read more)
- 2643. Appl. Phys. Lett. 58, 1641 (1991) , “Fundamental chemical differences among Pb defects on (111) and (100) silicon”, J. H. Stathis, L. Dori.Using electron spin resonance, a single defect (called Pb0) is observed at the Si(111)/SiO2 interface, whereas two different defects (called Pb0 and Pb1) are observed at the Si(100)/SiO2 interface. While... (Read more)
- 2644. Appl. Phys. Lett. 58, 1620 (1991) , “Excitons and light-induced degradation of amorphous hydrogenated silicon”, Martin S. Brandt and Martin StutzmannExcitonic states involved in electronic transport of undoped amorphous hydrogenated silicon (a-Si:H) are observed using spin-dependent photoconductivity (SDPC). Upon light soaking the excitonic signal decreases with regard to the SDPC signal due to recombination via dangling bonds. It has... (Read more)
- 2645. Appl. Phys. Lett. 58, 137 (1991) , “New application for isothermal capacitance transient spectroscopy: Identification of tunneling in semiconductor-insulator interfaces”, E. C. Paloura, J. Lagowski, and H. C. GatosThe GaAs-insulator interface is characterized by deep level transient spectroscopy (DLTS) and isothermal capacitance transient spectroscopy (ICTS). It is demonstrated that while DLTS can only detect transients with temperature-dependent emission rates, ICTS can detect temperature-independent... (Read more)
- 2646. Appl. Phys. Lett. 58, 131 (1991) , “Quenched-in defect removal through silicide formation by rapid thermal processing”, Daniel MathiotWe report on a detailed study of the influence of TiSi2 silicidation on the formation of the quenched-in defects usually created by rapid thermal processing (RTP). It is shown that TiSi2 growth during RTP leads to a total removal of the defects, whereas the presence of... (Read more)
- 2647. Appl. Phys. Lett. 56, 949 (1991) , “Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si”, A. J. Tavendale, S. J. Pearton, A. A. WilliamsWe demonstrate the drift of a donor-passivating hydrogen species under the action of the electric field in the depletion region of a reverse-biased Au/n-Si Schottky diode hydrogenated by exposure to a low-frequency discharge. The redistribution is explained by the unidirectional drift of a... (Read more)
- 2648. Appl. Surf. Sci. 50, 277-280 (1991) , “Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR”, T. Benchiguer, E. Christoffel, A. Goltzené, B. Mari, B. Meyer and C. SchwabWe have compared two different models which give account for the photoquenching behaviour of the As+Ga-related defects. The first model is based on the so-called metastability of the centre and the second one on an electrical charge transfer, resulting from the trapping of the photo-generated... (Read more)
- 2649. Appl. Surf. Sci. 50, 273-276 (1991) , “Interstitial Mn as a new donor in GaP and GaAs: an EPR study”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz , C. A. J. AmmerlaanWe report the observation of a new electron paramagnetic resonance centre in neutron-irradiated GaP and a similar new EPR centre in Mn-doped GaAs. Both centres have been identified as interstitial Mn and act as a donor. To our knowledge this is the first observation by EPR of an interstitial... (Read more)
- 2650. Appl. Surf. Sci. 48-49, 478-482 (1991) , “ESR studies on luminescent ZnS:Mn films and CdS---ZnS:Mn superlattices deposited on a GaAs(100) substrate by hot-wall epitaxy”, Takato Nakamura, Yoji Takeuchi, Hitoshi Muramatsu , Hiroshi Fujiyasu , Yoichiro NakanishiLuminescent ZnS:Mn thin films and CdS---ZnS:Mn superlattices on a GaAs(100) substrate prepared by the hot-wall epitaxy technique have been examined by means of electron spin resonance (ESR) spectroscopy. It was observed that the lowest energy transition assigned to M1 = −5/2 splits into... (Read more)
- 2651. J. Appl. Phys. 70, 5401-5403 (1991) , “Deep-level transient spectroscopy on p-type silicon crystals containing tungsten impurities”, Toshio Ando, Seiichi Isomae, and Chusuke MunakataTungsten deep levels are investigated to clarify energies, which are inconsistent among current research. Hole traps located at 0.41 eV above the top of the valence band are determined to be due to tungsten impurities. The concentration of hole traps is almost one-third of that of the tungsten... (Read more)
- 2652. J. Appl. Phys. 70, 346 (1991) , “Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride”, W. L. Warren, F. C. Rong, E. H. Poindexter, G. J. Gerardi, J. KanickiWe report the observation of both silicon and nitrogen paramagnetic defect centers using X-band and Q-band electron spin resonance microwave excitation frequencies. By using two different microwave frequencies along with a computer analysis of the resonance lineshapes, we have been... (Read more)
- 2653. J. Appl. Phys. 70, 2220 (1991) , “Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, W. L. Warren, P. M. Lenahan, J. KanickiWe have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance... (Read more)
- 2654. J. Appl. Phys. 69, 175 (1991) , “Electron Spin Resonance of Defects in Silicon-on-Insulator Structures Formed by Oxygen Implantation: Influence of ? Irradiation”, A. Stesmans, A. G. Revesz, H. L. Hughes.Silicon-on-insulator structures obtained by single-step implantation of oxygen followed by high temperature annealing were studied by K-band electron spin resonance (ESR) at 4.331 K. The spectrum has a strong line at g=2.0059±0.0001 with a spin density of... (Read more)
- 2655. J. Lumin. 48-49, 803 (1991) , “Microwave-induced line-narrowing of the N-V defect absorption in diamond”, E. van Oort, B. van der Kamp, R. Sitter and M. GlasbeekFor the diamond N-V center results of optically detected magnetic resonance experiments are reported using narrow-band laser excitation. Strain-induced splittings of the 3A ground state are observed in the ODMR spectra. In addition, an internal strain-induced lifting of the orbital degeneracy in the... (Read more)
- 2656. J. Phys. Soc. Jpn. 60, 3093 (1991) , “First Principle Calculation of the DX-CenterGround-States in GaAs, AlxGa1-xAs Alloysand AlAs/GaAs Superlattices”, Eiichi Yamaguchi, Kenji Shiraishi, Takahisa OhnoThe atomistic nature of the deep donor levels referred to as DX centers in GaAs, AlxGa1-xAs alloys and AlAs/GaAs superlattices is investigated by applying the ab initio self-consistent pseudopotential method to 64-atom super cells. The total energy and... (Read more)
- 2657. J. Phys.: Condens. Matter 3, 3605 (1991) , “Models for the di-nitrogen centres found in brown diamond”, M. E. Newton, J. M. BakerNo new experiments are reported in this paper: the paper comprises a re-interpretation of published EPR data of the various di-nitrogen centres in brown diamond, including the new ENDOR results of the authors' previous paper on the W7 centre (see ibid., vol.3, p.3591, 1991). The new evidence about... (Read more)
- 2658. J. Phys.: Condens. Matter 3, 3591 (1991) , “ENDOR studies on the W7 di-nitrogen centre in brown diamond”, M. E. Newton, J. M. BakerA new technique, involved rapid and repeated sweeping of radio-frequency irradiation through a wide frequency range, has been used to enhance the ENDOR signal of the W7 di-nitrogen centre in diamond. This allowed the determination of the following magnetic hyperfine and electric quadrupole... (Read more)
- 2659. Mater. Sci. Forum 83-87, 887 (1991) , “Defects in Semisonductors 16”, K. Krambrock, J.-M. Spaeth
- 2660. Phys. Rev. B 44, 6125 (1991) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Chromium-Indium Pair in Silicon”, P. Emanuelsson, P. Omling, H. G. Grimmeiss, J. Kreissl, W. Gehlhoff.An EPR spectrum in silicon doped with chromium and indium is reported. The spectrum, which shows a complicated fine and hyperfine structure could be identified as originating in a chromium-indium pair of trigonal symmetry. The fine structure corresponds to transitions within the... (Read more)
- 2661. Phys. Rev. B 44, 3678 (1991) , “Electron-Paramagnetic-Resonance Identification of the Manganese-Gallium Pair in Silicon”, J. Kreissl, K. Irmscher, W. Gehlhoff, P. Omling, P. Emanuelsson.An electron-paramagnetic-resonance (EPR) investigation of silicon doped with gallium and manganese shows a defect-related spectrum with trigonal symmetry. The proof that Mn and Ga are involved in the defect is based on the observed hyperfine interactions. A complicated fine-structure behavior... (Read more)
- 2662. Phys. Rev. B 44, 3409 (1991) , “Hydrogen States Probed by Electron-Spin Resonance of Phosphorus Donors in Silicon”, Kouichi Murakami, Hiromitsu Suhara, Shigeru Fujita, and Kohzoh MasudaHydrogen in phosphorus-doped silicon has been investigated, by monitoring shallow donor P by electron-spin resonance (ESR). Significant broadening in motionally narrowed ESR lines is first observed in Si samples treated with hydrogen plasma. It is found from the donor-concentration dependence that... (Read more)
- 2663. Phys. Rev. B 44, 3012 (1991) , “Magnetic-resonance studies of interstitial Mn in GaP and GaAs”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz, and C. A. J. AmmerlaanWe report the observation of an additional electron-paramagnetic-resonance (EPR) center in neutron-irradiated GaP. The center labeled as GaP-NL1 was further investigated with the electron-nuclear double-resonance technique. We also observed another, similar EPR center in GaAs doped with Mn, which we... (Read more)
- 2664. Phys. Rev. B 44, 11486-11489 (1991) , “Reorientation of the B-H complex in silicon by anelastic relaxation experiments”, G. Cannelli, R. Cantelli, M. Capizzi, C. Coluzza, F. Cordero, A. Frova, A. Lo PrestiThe elastic energy loss between 60 and 300 K was measured in SiBxHy at frequencies between 2.4 and 32 kHz. A single-time relaxation process appears in the neighborhood of 130 K, which is due to the stress-induced jumps of H around B, with a relaxation time... (Read more)
- 2665. Phys. Rev. B 44, 11353 (1991) , “O Environment of Unpaired Si Bonds (Pb Defects) at the (111)Si/SiO2 Interface”, A. Stasmans, K. Vanheusden.The immediate oxygen environment in the silica side of the [111]Pb defect (an interfacial ?Si?Si3 defect with an unpaired sp3-like hybrid perpendicular to the interface) has been revealed from 17O hyperfine (HF) structure electron-spin-resonance... (Read more)
- 2666. Phys. Rev. B 44, 10525 (1991) , “Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs”, C. DelerueThe electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the... (Read more)
- 2667. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 2668. Phys. Rev. B 43, 4028 (1991) , “Electronic structure of interstitial carbon in silicon ”, Morgan Besson and Gary G. DeLeoWe report the results of electronic structure calculations for the carbon interstitial in silicon in the positive, neutral, and negative charge states. We have used two self-consistent complementary cluster approaches. The modified neglect of diatomic differential overlap method produces reliable... (Read more)
- 2669. Phys. Rev. B 43, 14569 (1991) , “Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs”, G. Hendorfer and U. KaufmannElectron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR signals FR1 and GR2 in undoped semi-insulating GaAs under illumination as well as their spontaneous intensity changes when the light is switched off. These studies locate the FR1 level at... (Read more)
- 2670. Phys. Rev. Lett. 67, 3420 (1991) , “Spin Dynamics and Electronic States of N-V Centers in Diamond by EPR and Four-Wave-Mixing Spectroscopy”, D. A. Redman, S. Brown, R. H. Sands, S. C. RandA new phase-modulation technique for nonlinear laser spectroscopy is applied with a relative resolving power in the sub-Hz range to measure fundamental relaxation processes of the N-V center in diamond. Complementary EPR experiments versus temperature establish the spin character of the ground state... (Read more)
- 2671. Phys. Rev. Lett. 67, 2517 (1991) , “Experimental evidence for excitonic mechanism of defect generation in high-purity silica”, T. E. Tsai and D. L. GriscomDirect evidence for the creation of oxygen-vacancy, oxygen-interstitial pairs in SiO2 glasses by an excitonic mechanism is developed from an electron-spin-resonance study of high-purity fused silicas exposed to highly focused 6.4-eV excimer laser light. (Read more)
- 2672. Phys. Rev. Lett. 67, 1149 (1991) , “Structure of Gold in Silicon”, G. D. Watkins, M. Kleverman, A. Thilderkvist, and H. G. GrimmeissDetailed information on the electronic structure of the neutral substitutional gold center in silicon (Au0) has been revealed from Zeeman studies of the donor and acceptor excitation spectra at 793 and 611 meV, respectively. The center is paramagnetic, S=1/2, with g??2.8 and... (Read more)
- 2673. Phys. Rev. Lett. 67, 112 (1991) , “Photoluminescence Studies of the EL2 Defect in Gallium Arsenide under External Perturbations”, M. K. Nissen, A. Villemaire, and M. L. W. ThewaltThe fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2.... (Read more)
- 2674. Phys. Rev. Lett. 66, 774 (1991) , “Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure”, J. A. Wolk, M. B. Kruger, J. N. Heyman, W. Walukiewicz, R. Jeanloz, E. E. HallerWe report the observation of a local vibrational mode (LVM) in hydrostatically stressed, Si-doped GaAs. The corresponding infrared absorption peak is distinct from the SiGa shallow-donor LVM peak and is assigned to the Si DX center. The relative intensities of the Si DX LVM and the Si... (Read more)
- 2675. Phys. Rev. Lett. 66, 3028 (1991) , “Silicide formation and the generation of point defects in silicon ”, B. G. Svensson and M. O. Aboelfotoh and J. L LindstrmThe annealing behavior of the divacancy (V2) acceptor levels in silicon is investigated with the use of Schottky-barrier structures formed by the deposition of copper on n-type silicon irradiated with 2-MeV electrons. At temperatures below ∼150 °C an anomalously high annealing rate of... (Read more)
- 2676. Phys. Rev. Lett. 66, 2360 (1991) , “Deep State of Hydrogen in Crystalline Silicon: Evidence for Metastability”, B. Holm, K. Bonde Nielsen, and B. Bech NielsenAfter proton implantation into n-type silicon at 45 K, a bistable hydrogen center with a band-gap level Ec-Et=0.16 eV is observed by deep-level transient spectroscopy. The center anneals at ?100 K under zero bias with a decay constant ?=(3.01012... (Read more)
- 2677. phys. stat. sol. (a) 123, 357 (1991) , “Formation of New Donors and Structural Defects During Low-Temperature Oxygen Precipitation in CZ-Grown Silicon”, Y. Kamiura, F. Hashimoto, M. YonetaIt is demonstrated for the first time that the well known enhancement effects of carbon and low-temperature preannealing on the new donor (ND) generation at 650 C may be ascribed to the formation of three kinds of NDs, which can be distinguished by their characteristic deep-level transient... (Read more)
- 2678. phys. stat. sol. (b) 165, 189 (1991) , “EPR of New Platinum-Related Complexes in Silicon. II. Coexistence of a Tetragonal Jahn-Teller System and a Nearly Trigonal System in One Pair”, M. Höhne, W. Gehlhoff.A spectroscopic peculiarity of two Pt-related complex defects is interpreted for both of them by assuming one Pt ion in a crystal field, which is tetragonal, though another defect is trigonally coordinated. This coexistence is discussed in the framework of a static Jahn-Teller effect. Wave... (Read more)
- 2679. phys. stat. sol. (b) 164, 503 (1991) , “EPR of New Platinum-Related Complexes in Silicon I. Defects of Symmetry C1h Formed at Intermediate Temperatures”, M. Höhne, W. Gehlhoff.The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic... (Read more)
- 2680. Physica B 170, 155-167 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V. Gorelkinskii, N.N. Nevinnyi
- 2681. Physica B 170, 155 (1991) , “Electron paramagnetic resonance of hydrogen in silicon ”, Yu.V.Gorelkinskii, N.N.NevinnyiA review of the investigations by means of electron paramagnetic resonance (EPR) of hydrogen and hydrogen-related defects in crystalline silicon is presented. The main features of the EPR center Si-AA9 (bond-centered hydrogen), which is known as the hydrogenic analogue of the anomalous muonium (Mu*) in silicon, are discussed. It was found that the process of annealing the AA9 center is characterized by an activation energy, E = 0.48 ± 0.04 eV with a second-order pre-exponential factor, K0 = (1.25 ± 2.5) × 10-7 cm3/s. A detailed investigation by EPR of the defect (Si-AA1), which we identify as the hydrogen-related shallow donor in a positive charge state, is also presented. In particular it is shown that the H-related shallow donor is a helium-like center and its wave function has C2v symmetry. Moreover, the main features of the series of EPR spectra in silicon characteristic for the implantation of hydrogen are presented.
- 2682. Rev. Sci. Instrum. 62, 2969 (1991) , “Electron paramagnetic resonance Q-band bridge with GaAs field-effect transistor signal amplifier and low-noise Gunn diode oscillator”, James S. Hyde, M. E. Newton, Robert A. Strangeway, Theodore G. Camenisch, and W. FronciszA Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high... (Read more)
- 2683. Semicond. Sci. Technol. 6, B9 (1991) , “Comparison of three DX structural calculations presented at Thessaloniki”, G. A. BaraffThree structural calculations of the DX centre presented at Thessaloniki are of especial interest. Although they were carried out using nominally the same calculational apparatus, namely first-principles pseudopotentials, local density approximation, large unit cells etc, the three reached vastly... (Read more)
- 2684. Semicond. Sci. Technol. 6, B70 (1991) , “Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy”, D. L. Williamson, P. GibartThe bistable character of Sn donors AlxGa1-xAs for x>0.2 or in GaAs under pressure >2.4 GPa has been studied by 119Sn Mossbauer spectroscopy (MS). The shallow Sn donor state and the deep Sn DX state are observed to exist simultaneously and are readily... (Read more)
- 2685. Semicond. Sci. Technol. 6, B111 (1991) , “Metastable defects in silicon: hints for DX and EL2?”, G. D. WatkinsA review is given of defects that display metastability in silicon, with emphasis on those that have been identified and the various mechanisms that they reveal for the phenomenon. Pair defects described include interstitial-iron-substitutional-group-III-acceptors and ones formed by interstitial... (Read more)
- 2686. Solid State Commun. 80, 439 (1991) , “Electron paramagnetic resonance of nickel in silicon — II. hyperfine and quadrupole interactions”, N. T. Son, A. B. van Oosten and C. A. J. AmmerlaanAn electron paramagnetic resonance (EPR) study on n-type silicon doped with nickel enriched to 88.1% 61Ni is presented. The structure due to the 61Ni isotope with nuclear spin I = 3/2 was investigated. The EPR spectrum with the appearance of "forbidden" lines can be described by a spin... (Read more)
- 2687. Solid State Commun. 79, 119 (1991) , “Oxygen Interaction with Defects at the Si/SiO2 Interface”, J. H. Stathis, S. Rigo, I. Trimaille.Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. (Read more)
- 2688. Solid State Commun. 78, 321 (1991) , “Shallow donor in buried oxide Si-On-insulator structures revealed by γ-irradiation-induced electron spin resonance activation”, A. Stesmans.Si-on-insulator structures formed by implantation of oxygen (SIMOX) in a single step to a dose 1.8 × 1018 O+ cm−2 into p-type (0 0 1) Si and high temperature annealing have been studied by K-band electron spin resonance (ESR) at 4.3–31 K. γ-irradiation to a dose of 1 Mrad... (Read more)
- 2689. Solid-State Electronics 34, 835 (1991) , “Spin-dependent Shockley-read recombination of electrons and holes in indirect-band-gap semiconductor p-n junction diodes”, F. C. Rong, W. R. Buchwald, E. H. Poindexter, W. L. Warren , D. J. KeebleThis paper presents a new model for spin-dependent recombination and generation processes based on the electrical detection of magnetic resonance in semiconductor p-n junction diodes. Based on a modified Shockley-Read recombination statistics, this model differs from those models previously proposed... (Read more)
- 2690. Sov. Phys. Solid State 33, 1409 (1991) , “Electron paramagnetic resonance of phosphorus in diamond”, N. D. Samsonenko, V. V. Toki?, S. V. Gorban
- 2691. Sov. Phys. Solid State 33, 1326 (1991) , “Electron Spin Resonance of an Excited Triplet State of a Divacancy in Silicon”, M. P. Vlasenko, L. S. Vlasenko.
- 2692. Appl. Phys. Lett. 57, 2663 (1990) , “Maximum density of Pb centers at the (111) Si/SiO2 interface after vacuum anneal”, A. Stesmans and G. Van GorpThe density of interfacial [111]Pb centers, i.e., 0SiSi3 defects with unpaired bond along [111], has been accurately determined by K-band electron spin resonance at 4.3 K on (111)Si/SiO2 structures using various oxidation conditions.... (Read more)
- 2693. Appl. Phys. Lett. 57, 162 (1990) , “Chemical Kinetics of Hydrogen and (111) Si-SiO2 Interface Defects”, K. L. Brower and S. M. MyersElectron paramagnetic resonance (EPR) measurements and theoretical considerations have yielded a unified model for the hydrogen chemistry of silicon dangling bond Pb defects at the (111) Si-SiO2 interface. Previous EPR measurements indicated that passivation of... (Read more)
- 2694. Hyperfine Interactions 64, 561 (1990) , “Final states in Si and GaAs via RF ?SR spectroscopy ”, Kreitzman S. R.1 Pfiz T.1 Sun-Mack S.2 Riseman T. M.1 Brewer J. H.1 Williams D. Ll.1 and Estle T. L.3The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ f+) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ f+ fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively (Read more)
- 2695. Hyperfine Interactions 64, 535 (1990) , “Temperature dependence of muon-decay positron channeling in semiconductors ”, Simmler H.1 Eschle P.1 Keller H.1 Kndig W.1 Odermatt W.1 Patterson B. D.1 Pmpin B.1 Savi? I. M.1 Schneider J. W.1 Straumann U.1 and Trul P.1Planar channeling data ofμ +-decay positrons in various semiconductors are reported. Together with the extensive spectroscopic data supplied by transverse μSR, the location of the different states of the hydrogen pseudo-isotopeμ+ e- (muonium) can be identified by means of planar simulations. In high purity silicon as well as in gallium arsenide a thermally activated site transition is observed which can be assigned to a transition between different muonium states. (Read more)
- 2696. IBM J.RES. DEVELOP. 34, 227-242 (1990) , “Internal probing of submicron FETs and photoemission using individual oxide traps”, P. Restle, A. Gnudi
- 2697. IEEE Trans. Nucl. Sci. 37, 1650-1657 (1990) , “Spin dependent recombination: A 29Si hyperfine study of radiation-induced Pb centers at the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 2698. J. Appl. Phys. 68, 1358 (1990) , “Strong correlation between new donors and rodlike defects formed at 650 °C in phosphorus-doped, carbon-lean Czochralski silicon preannealed at 450 °C”, Yoichi Kamiura, Fumio Hashimoto, and Minoru YonetaEvidence is presented for strong correlation between new donors and rodlike defects generated at 650 °C in phosphorus-doped, carbon-lean Czochralski silicon preannealed at 450 °C. It is proposed that there are, in general, several types of new donors depending on experimental conditions, and... (Read more)
- 2699. J. Appl. Phys. 67, R1 (1990) , “Deep donor levels (DX centers) in III-V semiconductors”, P. M. MooneyDX centers, deep levels associated with donors in III-V semiconductors, have been extensively studied, not only because of their peculiar and interesting properties, but also because an understanding of the physics of these deep levels is necessary in order to determine the usefulness... (Read more)
- 2700. J. Appl. Phys. 67, 2462 (1990) , “NL10 Defects Formed in Czochralski Silicon Crystals”, Akito Hara, Iesada Hirai, and Akira OhsawaThe electron spin resonance of defects formed in high-resistivity Czochralski silicon crystals annealed at 470 °C were observed. Defects with C2v symmetry in nitrogen in-diffused crystals annealed for less than about 50 h were observed. With annealing for more than about... (Read more)
- 2701. J. Cryst. Growth 102, 701-705 (1990) , “Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide”, J. Wu, P. G. Mo and G. Y. WangS. Benakki, E. Christoffel, A. Goltzene and C. SchwabJ. R. Wang and C. H. LeeIn this study, the dislocation distribution in In-doped GaAs crystals is investigated by KOH etching. EPR (electron paramagnetic resonance) measurements are made on plastically deformed In-doped crystals. A mechanism for the elimination of dislocations by doping GaAs crystals with indium atoms is... (Read more)
- 2702. J. Electrochem. Soc. 137, 3642 (1990) , “Effects of Heat-Treatments on Electrical Properties of Boron-Doped Silicon Crystals”, Y. Kamiura, F. Hashimoto, and M. YonetaThe effects of heat-treatments around 1000ºC and subsequent annealing on the electrical properties of boron-dopedsilicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. Thehigh-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I–IV, of heat-treatment-induceddonors were observed on isochronal annealing up to 400°C. Conductivity changes in these stages can be explainedas described below by the reactions of interstitial iron (Fei), its pair (FeiBs) with substitutional boron (Bs), and twounknown donors (D1, D2). That is, stage I (25º–100ºC) D1 → sink and Fei + Bs → FeiBs, stage II (100º–150ºC):FeiBs → Fei + Bs, stage III (200º–250ºC): D2 → sink, stage IV (250º–350ºC): Fei → precipitation. Heat-treatments in an oxygenatmosphere greatly reduced the introduction of Fei and FeiBs in comparison with an argon atmosphere and mainly introducedD1 and D2 donors. The density of D2 was dependent on the heat-treatment temperature, while that of D1 showed almostno dependence. In stage I, D1 was annihilated by first-order kinetics with an activation energy of 0.8 eV. It was indicatedthat D1 and D2 have no relations to iron, copper, oxygen, nor carbon. Though their origins are still unidentified, theremay be some interstitial impurities. In stage IV, Fei is suggested to precipitate at oxygen precipitates and dislocation loopsformed by high-temperature heat-treatments. As to the application to iron gettering in the device fabrication process, it isproposed that annealing around 300ºC is most suitable as the final heat-treatment step to remove iron and related defectsfrom active regions of devices. (Read more)
- 2703. J. Lumin. 45, 26 (1990) , “ANOMALOUS LINESHAPES IN RAMAN HETERODYNE DETECTED EPR”, P. T. H. Fisk, X. -F. He, K. Holliday and N. B. MansonAn unusual lineshape has been observed in the Raman heterodyne NMR and EPR signals associated with a nitrogen-vacancy centre in diamond. This lineshape is shown to result from power broadening effects and can be expected as a general result from any Raman heterodyne signal where the transition under... (Read more)
- 2704. J. Non-Cryst. Solids 116, 289-292 (1990) , “Bleaching of peroxy radical in SiO2 glass with 5 eV light*1”, H. Hosono, R. A. WeeksPeroxy radical (POR) in SiO2 glass has been found to be bleached out by illumination with 5 eV light without accompanying changes in E′ and non-bridging oxygen hole centers. An absorption band centered at 4.8 eV (FWHM; ≈ 0.8 eV is also bleached together with POR. It is suggested that... (Read more)
- 2705. J. Phys.: Condens. Matter 2, 6707 (1990) , “Theory of the structure of the self-trapped exciton in quartz”, A J Fisher, W Hayes and A M StonehamQuartz is an insulator with an extremely wide band gap in the vacuum ultra-violet. However, under irradiation from high-energy electrons or X-rays, samples of high purity emit a luminescence band in the blue, corresponding to a Stokes shift of approximately 7 eV. This large Stokes shift has been... (Read more)
- 2706. Jpn. J. Appl. Phys. 29, L388 (1990) , “Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si”, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoDX centers in GaAs codoped with Ge and Si have been investigated under a hydrostatic pressure, where Ge acts as a DX center, and Si as a shallow donor. It is demonstrated that the number of electrons trapped by the Ge DX center at 22 kbar increases with Si concentration and tends to saturate at a... (Read more)
- 2707. Jpn. J. Appl. Phys. 29, L1937 (1990) , “Optical Properties of New Kinds of Thermal Donors in Silicon ”, Yoichi Kamiura, Masashi Suezawa1, Koji Sumino1 and Fumio HashimotoWe have found with far-infrared (FIR) absorption spectroscopy that prolonged annealing of silicon at 470°C leads to the generation of new FIR absorption bands. They are strongly correlated with a recently observed new type of oxygen-related thermal donor (NTD) which is different from either the... (Read more)
- 2708. Jpn. J. Appl. Phys. 29, L1572 (1990) , “Low-Temperature Static Magnetic Susceptibility of Al0.3Ga0.7As with DX Centers”, Shingo Katsumoto, Noriaki Matsunaga, Yasuhiro Yoshida, Katsuyuki Sugiyama, Shun-ichi KobayashiWe have measured the static magnetic susceptibility of Al0.3Ga0.7As doped with 1×1018 cm-3 Te from 20 mK to 1 K in order to study the electron ground state of the DX center. We observed Curie-law temperature dependence of the susceptibility which... (Read more)
- 2709. Opt. Lett. 15, 983 (1990) , “Raman heterodyne detection of electron paramagnetic resonance”, K. Holliday, X. -F. He, P. T. H. Fisk, N. B. MansonWe report the detection of an electron paramagnetic resonance signal using Raman heterodyne spectroscopy, a rf –optical double-resonance technique. The signals are associated with the nitrogen-vacancy center in diamond, which has a spin-triplet ground state. A three-line spectrum associated with the nitrogen hyperfine structure is observed for various magnetic field strengths and crystal orientations. (Read more)
- 2710. Opt. Lett. 15, 1094 (1990) , “Raman heterodyne detected electron-nuclear-double-resonance measurements of the nitrogen-vacancy center in diamond”, N. B. Manson, X. -F. He, P. T. H. FiskWe report two new applications of the Raman heterodyne detection technique. Raman heterodyne detected electron-nuclear double resonance and a double rf resonance technique are used to obtain the hyperfine structure of the nitrogen-vacancy center in diamond. (Read more)
- 2711. Phys. Rev. B 42, 9843 (1990) , “EPR studies of interstitial Ni centers in synthetic diamond crystals”, J. Isoya, H. Kanda, Y. UchidaTwo new electron-paramagnetic-resonance (EPR) spectra, tentatively labeled NIRIM-1 and NIRIM-2, have been studied using synthetic diamond crystals grown from the Ni solvent to which various amounts of nitrogen getters (Ti, Zr) and/or boron were added. The NIRIM-1 spectrum (g=2.0112) having the... (Read more)diamond| EPR| NIRIM1 NIRIM2 .inp files: diamond/NIRIM1 diamond/NIRIM2 | last update: Masatoshi Sasaki
- 2712. Phys. Rev. B 42, 9664 (1990) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, A. ShlugerThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 2713. Phys. Rev. B 42, 8605 (1990) , “Low-field optically detected magnetic resonance of a coupled triplet-doublet defect pair in diamond”, Eric van Oort, Paul Stroomer, and Max GlasbeekMicrowave-induced changes in the optical emission of the N-V center in diamond have previously been attributed to magnetic resonance of the defect in its 3A ground state [E. van Oort et al., J. Phys. C 21, 4385 (1988)]. In this paper, the focus is on the origin of the hyperfine splittings... (Read more)
- 2714. Phys. Rev. B 42, 7174 (1990) , “Stability of DX centers in AlxGa1-xAs alloys ”, S. B. Zhang, D. J. ChadiThe band-gap dependence of the binding energy of Si-induced DX centers in AlxGa1-xAs alloys was determined from an ab initio total-energy approach. Band-structure modifications resulting from changes in alloy composition and hydrostatic pressure were examined. The... (Read more)
- 2715. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbonsubstitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon molecule... (Read more)
- 2716. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 2717. Phys. Rev. B 42, 3765 (1990) , “Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface”, A. Stesmans, G. Van GorpDipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of... (Read more)
- 2718. Phys. Rev. B 42, 3461 (1990) , “EPR evidence for As interstitial-related defects in semi-insulating GaAs”, E. Christoffel, T. Benchiguer, A. Goltzen, C. Schwab, Wang Guangyu, Wu JuWe report the analysis of the residual paramagnetic structure appearing in semi-insulating GaAs after microwave saturation of the AsGa-related spectrum and most intense after preliminary plastic deformation of the material. It is separable into two similar and correlated central hyperfine... (Read more)
- 2719. Phys. Rev. B 42, 3444 (1990) , “Dissociation Kinetics of Hydrogen-Passivated (111) Si-SiO2 Interface Defects”, K. L. Brower.This paper is concerned with the chemical kinetics of the transformation of hydrogen-passivated interface defects (HPb centers) into paramagnetic Pb centers (?Si?Si3) at the (111) Si-SiO2 interface under vacuum thermal annealing. Float-zone (111) silicon... (Read more)
- 2720. Phys. Rev. B 42, 1773 (1990) , “Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, William L. Warren and P. M. LenahanWe report the first observation of 14N nearest-neighbor hyperfine interactions with an unpaired electron on silicon dangling-bond centers, K centers, in silicon nitride generated by ultraviolet or gamma irradiation. We observe this interaction using electron-nuclear double-resonance... (Read more)
- 2721. Phys. Rev. B 42, 1731 (1990) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Manganese-Indium Pair in Silicon”, J. Kreissl, W. Gehlhoff, P. Omling, P. Emanuelsson.A new, defect-related electron-paramagnetic-resonance (EPR) spectrum in silicon doped with indium and manganese is reported. The spectrum shows trigonal symmetry, and the involvements of Mn and In in the defect are proven from the observed hyperfine interactions. A complicated and unusual... (Read more)
- 2722. Phys. Rev. B 42, 1500 (1990) , “Electron-paramagnetic-resonance study of the Te donor in Ga0.70Al0.30As”, H. J. von Bardeleben, M. Zazoui, S. Alaya, P. GibartWe report an electron-paramagnetic-resonance (EPR) study of a group-VI donor in Ga1-xAlxAs (x=0.30). No EPR spectrum associated with the DX ground state could be detected. After photoexcitation with E?0.6 eV an EPR spectrum is observed, which is attributed to the... (Read more)
- 2723. Phys. Rev. B 42, 11791 (1990) , “Donor states in GaAs under hydrostatic pressure”, X. Liu, L. Samuelson, M.-E. Pistol, M. Gerling, and S. NilssonSpectroscopic studies have been carried out for GaAs crystals under hydrostatic pressure, intended for the investigation of effective-mass donor levels associated with different conduction-band minima and the DX center. Our results reveal the existence of three donor states appearing in the band... (Read more)
- 2724. Phys. Rev. B 42, 11352-11354 (1990) , “Source of 17O hyperfine broadening of the Pb resonance associated with the (111) Si-SiO2 interface”, K. L. BrowerThe Pb center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO2 interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 C of (111) silicon with O2 enriched with 17O (I=5/2) to 51.26% is observed... (Read more)
- 2725. Phys. Rev. B 41, 8560 (1990) , “Electron Paramagnetic Resonance Identification of the Orthorhombic Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA different EPR spectrum (Lu4) in silicon doped with indium and iron is reported together with an EPR spectrum previously observed by Ludwig and Woodbury. The two spectra show orthorhombic symmetry and are found to originate from the same FeIn pair. They are explained as transitions within the two... (Read more)
- 2726. Phys. Rev. B 41, 5283 (1990) , “Fine structure of excitons in type-II GaAs/AlAs quantum wells”, H. W. van Kesteren, E. C. Cosman, W. A. J. A. van der Poel, C. T. FoxonOptically detected magnetic resonance in zero field as well as in a finite magnetic field has been used to study the excitons in type-II GaAs/AlAs quantum wells. The spectra are analyzed using the appropriate spin Hamiltonian for the quasi-two-dimensional indirect excitons. The electron-hole... (Read more)
- 2727. Phys. Rev. B 41, 3905 (1990) , “Fourier-transform and continuous-wave EPR studies of nickel in synthetic diamond: Site and spin multiplicity”, J. Isoya, H. Kanda, J. R. Norris, J. Tang, M. K. BowmanPulsed, Fourier-transform, and continuous-wave electron paramagnetic resonance methods are used to study the g=2.0319 EPR signal in synthetic diamond crystals. This signal is from Ni which is found to be located at a substitutional site in the diamond lattice without detectable nearby charge... (Read more)
- 2728. Phys. Rev. B 41, 3794 (1990) , “Luminescence and defect formation in undensified and densified amorphous SiO2”, Chihiro Itoh, Toshio Suzuki, and Noriaki ItohLuminescence and optical absorption induced by an electron pulse and by a subsequent laser pulse have been studied in densified and undensified amorphous SiO2 at 77 K. We find that the decay of the optical-absorption change induced by an electron pulse consists of two components: one... (Read more)
- 2729. Phys. Rev. B 41, 12628 (1990) , “Comparative Study of Si-NL8 and Si-NL10 Thermal-Donor-Related EPR Centers”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe current status of the electron-paramagnetic-resonance and electron-nuclear double-resonance (ENDOR) studies of thermal-donor (TD) centers in silicon is critically reviewed. The structural models developed for the TD-related Si-NL8 and Si-NL10 heat-treatment centers are presented. On the basis of... (Read more)
- 2730. Phys. Rev. B 41, 12354-12357 (1990) , “Negative-charge state of hydrogen in silicon”, J. Zhu, N. M. Johnson, and C. HerringIt is demonstrated that hydrogen can migrate in silicon as a negatively charged species (H-). The evidence is the combined observation of a strong electric-field dependence in the rate of removal of PH complexes during bias-temperature stress of hydrogenated Schottky-barrier diodes and... (Read more)
- 2731. Phys. Rev. B 41, 10206 (1990) , “Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures”, U. Kaufmann, W. Wilkening, P. M. Mooney, T. F. KuechWe report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x≥0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain... (Read more)
- 2732. Phys. Rev. Lett. 65, 207 (1990) , “First Observation of Paramagnetic Nitrogen Dangling-Bond Centers in Silicon Nitride”, William L. Warren, P. M. Lenahan, and Sean E. CurryWe report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electrons wave function is almost... (Read more)
- 2733. Phys. Rev. Lett. 65, 2046 (1990) , “Anion-Antisite-like Defects in III-V Compounds”, M. J. Caldas, J. Dabrowski, A. Fazzio, and M. SchefflerWe report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift... (Read more)
- 2734. Phys. Rev. Lett. 64, 3042 (1990) , “Microscopic identification and electronic structure of a di-hydrogenvacancy complex in silicon by optical detection of magnetic resonance”, W. M. Chen, O. O. Awadelkaim, B. Monemar, J. L. Lindstrm, G. S. Oehrlein.We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine... (Read more)
- 2735. Phys. Rev. Lett. 64, 2042 (1990) , “New insight into silicide formation: The creation of silicon self-interstitials ”, Maria Ronay and R. G. SchadDiffusion studies of Cu+Re and Re+CU films on silicon show that the formation of Cu3Si precursor lowers the formation temperature of ReSi2 from over 900 to 550 °C. The results are explained and generalized to all metal-rich silicides by the specific volume of silicon being... (Read more)
- 2736. phys. stat. sol. (a) 121, 63 (1990) , “Point Paramagnetic Defects in Diamond Irradiated by High-Energy Ions”, D. P. Erchak, R. B. Grelfand, N. M. Penina, V. F. Stelmakh, V. P. Tolstykh, A. G. Ulyashin, V. S. Varichenko, A. M. ZaitsevA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 2737. Solid State Commun. 76, 1083 (1990) , “Electrically detected magnetic resonance in p-n junction diodes ”, F. Rong, E. H. Poindexter, M. Harmatz and W. R. BuchwaldG. J. GerardiElectrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g-values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The... (Read more)
- 2738. Solid State Commun. 75, 115 (1990) , “Magnetic Resonance Spectroscopy of Zinc Doped Silicon”, H. E. Altink, T. Gregorkiewicz and C. A. J. AmmerlaanThe spin-Hamiltonian analysis is presented of five new electron paramagnetic resonance spectra observed in silicon after indiffusion of zinc impurity. On the basis of hyperfine interactions one of the spectra is identified with a monoclinic ZnCu pair, while another spectrum arises from a trigonal... (Read more)
- 2739. Solid State Commun. 74, 1003 (1990) , “Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface”, A. Stesmans, G. Van Gorp.K-band spectron spin resonance spectra measured at 4.3 K reveal for the first time dipole-dipole (DD) interaction effects between [1 1 1]Pb centers. These are °Si ≡ Si3 defects with unpaired sp3 hybrid |[1 1 1] located at the essentially 2-dimensional (1 1 1)Si/SiO2 interface. Both line... (Read more)
- 2740. Solid State Commun. 73, 393 (1990) , “Electron paramagnetic resonance of nickel in silicon. — I. Identification of spectrum”, L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, V. A. KhramtsovResults are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions... (Read more)
- 2741. Sov. Phys. Semicond. 24, 851 (1990) , “Electron Spin Resonance of FeFeB Complexes in Silicon”, A. A. Ezhevski?, C. A. J. Ammerlaan.
- 2742. Sov. Phys. Solid State 32, 1292 (1990) , “Relationship between a Combined Resonance in Plastically Deformed n-Type Silicon with a Dislocation Structure”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osipyan, A. I. Shalynin.
- 2743. Vacuum 41, 1633-1635 (1990) , “Characterization of defects on ZnO and Ru---ZnO: a structural, TPD, and spectroscopic study”, M. G. CattaniaP. d'AntonaF. Morazzoni and R. ScottiSurface and bulk defects in ZnO were recognized as interstitial zinc atoms and surface oxygen vacancies (V0)s by means of XRD, SEM, TPD and ESR measurements. Dispersion of ruthenium at the ZnO surface induces an electron transfer from ZnO defects to the metal as revealed by ESR and XPS spectroscopy. (Read more)
- 2744. Appl. Phys. A 49, 123 (1989) , “Thermal double donors in silicon ”, P. Wagner and J. HageA family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics. (Read more)
- 2745. Appl. Phys. A 48, 59 (1989) , “Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy ”, Th. Wichert, M. Deicher, G. Grbel, R. Keller, N. Schulz and H. SkudlikThe formation of molecule-like complexes, consisting of a defect and a radioactive 111In atom, is studied using the perturbed γγ angular correlation technique (PAC). The complexes are characterized by their defect specific electric field gradients which also contain information on the geometry of the formed complexes. Whereas the complex is formed with the111In atom, its electric field gradient is measured after the decay of the radioactive 111In atom to 111Cd. Formation and dissolution of the molecule-like complexes is pursued for a variety of different conditions, such as sample temperature, dopant concentration and position of the Fermi level. In particular, the interaction of In atoms with the following defects in Si was investigated: Intrinsic defects, created by particle irradiation; substitutional donor atoms (P, As, Sb, Bi); and interstitial impurity atoms (Li, H, and an unidentified X defect); especially, the latter ones are known to passivate acceptor atoms in Si. Methodology and specific properties of the PAC technique will be illustrated with the help of these examples. (Read more)
- 2746. Appl. Phys. Lett. 54, 1881 (1989) , “Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures”, M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, A. R. CalawaGaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree... (Read more)
- 2747. Appl. Surf. Sci. 39, 392 (1989) , “THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS SILICON NITRIDE FILMS: EVIDENCE FOR A NEGATIVE CORRELATION ENERGY”, P. M. Lenahan and D. T. KrickJ. KanickiA recent study by Krick and coworkers provided the first direct evidence associating a specific point-defect with trapping phenomena in silicon nitride films. Krick and coworkers demonstrated that silicon “dangling bond” centers in silicon nitride films are electrically neutral when... (Read more)
- 2748. Chin. Phys. 9, 976 (1989) , “Photoquenching of electronic paramagnetic resonance "AsGa" and metastable mechanism of EL2 defect in GaAs”, Zou Yuan-xi , Wang Guang-yu
- 2749. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 2750. J. Appl. Phys. 66, 780 (1989) , “P-Rich Si Particles in Separation by Implanted Oxygen Structures Revealed by Low-Temperature Electron-Spin Resonance”, G. Van Gorp and A. StesmansLow-temperature X- and K-band electron-spin-resonance measurements on separation by implanted oxygen structures formed by implanting oxygen to a dose 1.7×1018 cm2 on [001] c-Si wafersboth n and p type [dopant concentration... (Read more)
- 2751. J. Appl. Phys. 66, 4529 (1989) , “Electron spin resonance in electron-irradiated 3C-SiC”, Hisayoshi Itoh, Naohiro Hayakawa, Isamu Nashiyama, Eiichiro SakumaElectron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of... (Read more)
- 2752. J. Appl. Phys. 66, 3026 (1989) , “Perturbed angular correlation studies of dopant atom interactions in silicon”, Th. Wichert and M. L. SwansonThe perturbed angular correlation (PAC) technique was used to study the interaction of implanted 111 In probe atoms with the donor atoms P, As, and Sb in Si. Nearest-neighbor pairs of In-P, In-As, and In-Sb atoms, characterized by Q1 =179(1), 229(1), and 271(1) MHz,... (Read more)
- 2753. J. Appl. Phys. 65, 600 (1989) , “A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon”, Yoichi Kamiura, Fumio Hashimoto, and Minoru YonetaWe have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of... (Read more)
- 2754. J. Appl. Phys. 65, 2723 (1989) , “Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon”, Kenji Taniguchi, Yoshiaki Shibata, and Chihiro HamaguchiUsing a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at the Si/SiO2 interface is accurately determined by means of oxidation-induced stacking fault growth observation. The results show that the interstitial concentration at... (Read more)
- 2755. J. Chem. Phys. 91, 69 (1989) , “Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+ ”, Lon. B. Knight, Jr. and John O. HerlongThe 69GaP + and 71GaP + molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance (ESR) investigation. The ground electronic state of GaP +... (Read more)
- 2756. J. Electrochem. Soc. 136, 2025 (1989) , “Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry”, F. Schomann and K. Graff
- 2757. J. Electrochem. Soc. 136, 2015 (1989) , “Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption”, A. Baghdadi and W. M. Bullis and M. C. Croarkin and Yue-zhen Li and R. I. Scace and R. W. Series and P. Stallhofer and M. Watanabe
- 2758. J. Non-Cryst. Solids 111, 16-28 (1989) , “Mechanism of photochromism in oxide glasses containing a large amount of CdO or ZnO”, H. Kawazoe, R. Suzuki, S. Inoue and M. YamaneUV-induced optical and ESR absorptions of borosilicate glasses containing a large amount ( 50 mol%) of CdO or ZnO were measured at room temperature and 77 K while changing the wavelength of the illuminating light. The induced optical absorption was one order of magnitude stronger at 77 k than at... (Read more)
- 2759. J. Phys.: Condens. Matter 1, 9801 (1989) , “14N ENDOR of the N2 centre in diamond”, M. E. Newton, J. M. Baker14N ENDOR in the N2 centre in diamond demonstrates that nitrogen is a constituent of the centre. (Read more)
- 2760. J. Phys.: Condens. Matter 1, 35 (1989) , “The Structure of Chalcogen Pairs in Silicon”, S. Greulich-Weber, J. R. Niklas, J. M. Spaeth.The chalcogen pair centres (S-S)+ and (Se-Se)+ in Si were investigated with electron-nuclear double resonance (ENDOR). It was possible to resolve the superhyperfine interactions with 16 shells ((S-S)+) and 20 shells ((Se-Se)+) of 29Si neighbours... (Read more)
- 2761. J. Phys.: Condens. Matter 1, 10549 (1989) , “14N ENDOR of the OK1 centre in natural type Ib diamond”, M. E. Newton, J. M. BakerAn ENDOR investigation has confirmed that the OK1 centre is a low-symmetry ( sigma h) centre, incorporating a single nitrogen atom. The 14N hyperfine and quadrupole coupling matrices have been determined by fitting the data to an exact solution of the energy matrix. Using this... (Read more)
- 2762. J. Vac. Sci. Technol. B 7, 710 (1989) , “Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures”, M. Kaminska, E. R. Weber, Z. Liliental-Weber, R. Leon, Z. U. RekGaAs layers grown by molecular-beam epitaxy (MBE) at very low substrate temperatures have gained considerable interest as buffer layers for GaAs metalsemiconductor field effect transistors (MESFET's) due to high resistivity and excellent device isolation. However, the structure and the... (Read more)
- 2763. Jpn. J. Appl. Phys. 28, L891 (1989) , “The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration”, Toshio Baba, Masashi Mizuta, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoThe energy-level structure of the DX centers corresponding to specific local environments was investigated under hydrostatic pressure. Several discrete DX levels, each of which was a well-defined single level, were clearly resolved. The energy level of the Si... (Read more)
- 2764. Jpn. J. Appl. Phys. 28, 142 (1989) , “Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon”, A. Hara, T. Fukuda, T. Miyabo, I. Hirai.We observed the electron spin resonance of oxygen-nitrogen complexes (ONCs) and found that they have C2V symmetry. Although they contain nitrogen, hyperfine interaction (hf) with nitrogen cannot be clearly observed. These characters of ONCs resemble thermal donors (TDs) very closely. (Read more)
- 2765. Jpn. J. Appl. Phys. 28, 1402 (1989) , “Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps ”, Hiroshi Nakashima and Kimio HashimotoThe density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a... (Read more)
- 2766. Phys. Rev. B 40, 6509 (1989) , “Cross-relaxation dynamics of optically excited N-V centers in diamond”, E. van Oort, M. GlasbeekUpon the cw optical excitation of N-V centers in diamond, a spin alignment in the ensemble of nonexcited N-V defects in the electron spin-triplet ground state is induced. When the diamond sample is subjected to magnetic fields of suitable directions and strengths, cross relaxation (CR) and level... (Read more)
- 2767. Phys. Rev. B 40, 4054 (1989) , “Oxygen-Vacancy Complex in Silicon. II. 17O Electron-Nuclear Double Resonance”, R. van Kemp, M. Sprenger, E. G. Sieverts, C. A. J. Ammerlaan.An electron-nuclear double-resonance (ENDOR) study was performed on the negatively charged oxygen-vacancy complex in silicon. By introducing the isotope 17O (nuclear spin I=(5/2) to an enrichment of about 40%, it was possible to detect ENDOR transitions of this nucleus. In the experiment... (Read more)
- 2768. Phys. Rev. B 40, 4037 (1989) , “Oxygen-Vacancy Complex in Silicon. I. 29Si Electron-Nuclear Double Resonance”, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The negative charge state of the oxygen-vacancy complex in silicon has been studied by electron-nuclear double resonance. Hyperfine interactions between the unpaired electron and 29Si nuclei in 50 shells of neighboring lattice sites have been determined. These shells contain 145 lattice... (Read more)
- 2769. Phys. Rev. B 40, 3872 (1989) , “Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs”, Mark Hoinkis and Eicke R. WeberTemperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (AsGa+) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically... (Read more)
- 2770. Phys. Rev. B 40, 1732 (1989) , “Structure of Thermal Donors (NL8) in Silicon: A Study with Electron-Nuclear Double Resonance”, J. Michel, J. R. Niklas, J. M. Spaeth.Singly ionized thermal donors [(TD)+], which give rise to the NL8 ESR spectrum, were investigated with electron-nuclear double resonance (ENDOR) in B-doped Czochralski-grown silicon and float-zone silicon into which the magnetic isotope 17O was diffused. TDs were formed by... (Read more)
- 2771. Phys. Rev. B 40, 11644 (1989) , “Hydrogen bonding and diffusion in crystalline silicon”, K. J. ChangThe nature of hydrogen bonding and diffusion in crystalline Si was investigated using an ab initio self-consistent pseudopotential method. The relative energies of interstitial atomic hydrogen, diatomic hydrogen complexes, and shallow dopant-hydrogen complexes were examined. We present a mechanism... (Read more)
- 2772. Phys. Rev. B 39, 7978 (1989) , “Structure of the Heat-Treatment Centers NL8 and NL10 in Silicon”, J. Michel, N. Meilwes, J. M. Spaeth.An electron-spin-resonance investigation on n-type (P-doped) and an electron-nuclear double-resonance (ENDOR) investigation on p-type (B- and Al-doped) Czochralski-grown oxygen-rich Si was performed after annealing at 460 C and formation of the heat-treatment centers Si-NL8 and Si-NL10. The NL10... (Read more)
- 2773. Phys. Rev. B 39, 6253 (1989) , “Electron paramagnetic resonance identification of the SbGa heteroantisite defect in GaAs:Sb”, M. Baeumler, J. Schneider, U. Kaufmann, W. C. Mitchel, P. W. YuGaAs doped with antimony (Sb) to a level of 1019 cm-3 has been studied by electron paramagnetic resonance (EPR). A new EPR spectrum has been discovered which is identified as the SbGa heteroantisite defect. The electronic structure of this defect is practically... (Read more)
- 2774. Phys. Rev. B 39, 5554 (1989) , “Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs”, P. M. Mooney, W. Wilkening, U. Kaufmann, T. F. KuechWe report measurements of an EPR signal in indirect-gap Si-doped AlxGa1-xAs whose intensity increases after illumination at low temperature. The data indicate that this signal comes from a hydrogenic level associated with the X valley of the conduction band. Measurements of the... (Read more)
- 2775. Phys. Rev. B 39, 5538 (1989) , “Unification of the properties of the EL2 defect in GaAs”, M. Hoinkis, E. R. Weber, W. Walukiewicz, J. Lagowski, M. Matsui, H. C. Gatos, B. K. Meyer, J. M. SpaethWe provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results... (Read more)
- 2776. Phys. Rev. B 39, 2864 (1989) , “Observation of the Localized Si Dangling-Bond Pb Defect at the Si/Si3N4 Interface”, A. Stesmans, G. Van Gorp.Low-temperature electron-spin resonance (ESR) reveals the presence of the Pb defect (identified with Si?Si3) at the thermally grown (111)Si/Si3N4 interface. This constitutes the first observation of this defect (called PbN) at a natural Si/solid... (Read more)
- 2777. Phys. Rev. B 39, 1966 (1989) , “Comment on "Atomic model for the EL2 defect in GaAs"”, H. J. von Bardeleben, J. C. Bourgoin, D. StievenardThe AsGa-VGa-VAs model for the EL2 defect in liquid encapsulated Czochralski grown GaAs proposed by Wager and Van Vechten is not supported by the experimental results: Neither divacancy defects nor gallium-vacancy-related defects have been observed by positron... (Read more)
- 2778. Phys. Rev. B 39, 1648 (1989) , “Silicon Electron-Nuclear Double-Resonance Study of the NL10 Heat-Treatment Center”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. Ammerlaan29Si electron-nuclear double-resonance (ENDOR) measurements were performed for the Si-NL10 center. The results were compared with the 29Si ENDOR measurements of the Si-NL8 spectrum and were found to be similar with the defect electron being even more delocalized in the case of... (Read more)
- 2779. Phys. Rev. B 39, 13327 (1989) , “Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon”, W. Kürner, R. Sauer, A. Dörnen, and K. ThonkeThe oxygen-carbon luminescence defects with no-phonon emission at 0.767 eV (‘‘P line’’) and 0.79 eV (‘‘C line’’) created in pulled silicon after 450 °C thermal annealing or electron irradiation, respectively, are investigated in a comparative study. This includes investigation of... (Read more)
- 2780. Phys. Rev. B 39, 11183 (1989) , “Threshold energy for photogeneration of self-trapped excitons in SiO2”, Chihiro Itoh, Katsumi Tanimura, and Noriaki ItohThe excitation spectrum of the 2.8-eV luminescence band of crystalline SiO2 has been measured in a photon energy range between 6 and 14 eV at 77 K. We find that the onset of the 2.8-eV luminescence occurs at 8.3 eV, which is nearly equal to the fundamental optical absorption edge of... (Read more)
- 2781. Phys. Rev. B 39, 10809 (1989) , “Microscopic structure of the hydrogen-boron complex in crystalline silicon”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. PantelidesThe microscopic structure of hydrogen-boron complexes in silicon, which result from the passivation of boron-doped silicon by hydrogen, has been extensively debated in the literature. Most of the debate has focussed on the equilibrium site for the H atom. Here we study the microscopic structure of... (Read more)
- 2782. Phys. Rev. B 39, 10791-10808 (1989) , “Theory of hydrogen diffusion and reactions in crystalline silicon”, Chris G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. PantelidesThe behavior of hydrogen in crystalline silicon is examined with state-of-the-art theoretical techniques, based on the pseudopotential-density-functional method in a supercell geometry. Stable sites, migration paths, and barriers for different charge states are explored and displayed in total-energy... (Read more)
- 2783. Phys. Rev. B 39, 10063 (1989) , “Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys ”, D. J. Chadi, K. J. ChangThe energetics of the shallow-deep transition of donor states in AlxGa1-xAs alloys and the problem of Fermi-level pinning by DX centers in highly doped GaAs are examined via simple theoretical models and ab initio self-consistent pseudopotential total-energy calculations. The... (Read more)
- 2784. Phys. Rev. B 20, 1823 (1989) , “E? center in glassy SiO2: Microwave saturation properties and confirmation of the primary 29Si hyperfine structure”, David L. GriscomElectron-spin-resonance studies of a series of air-annealed samples of glassy SiO2 having various degrees of enrichment (or depletion) in the 29Si isotope have confirmed that a ?-ray-induced doublet of 420-G splitting is the 29Si hyperfine structure of the well-known... (Read more)
- 2785. Phys. Rev. Lett. 63, 2276 (1989) , “Photoluminescence transients due to hole capture at DX centers in AlxGa1-xAs:Si”, G. Brunthaler, K. Ploog, W. JantschThe near-band-gap photoluminescence of AlGaAs:Si shows a slow intensity transient after cooling the sample in darkness to low temperatures. This transient correlates to the Si dopant concentration. By investigating the behavior for below- and above-band-gap illumination we show that the observed... (Read more)
- 2786. Phys. Rev. Lett. 63, 1027 (1989) , “Quantum or classical motion of H in Si:B?”, A. M. StonehamA Comment on the letter by M. Stavola et al., Phys. Rev. Lett. 61, 2786 (1988). (Read more)
- 2787. Phys. Rev. Lett. 62, 1884 (1989) , “Structure and properties of hydrogen-impurity pairs in elemental semiconductors”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. PantelidesA variety of experiments have revealed several puzzling properties of hydrogen-impurity pairs. For example, H atoms passivate the electrical activity of some impurities, whereas they induce electrical activity in others; they appear to tunnel around some impurities but not around others. We report... (Read more)
- 2788. Phys. Rev. Lett. 58, 1780 (1989) , “Determination of the electronic structure of anomalous muonium in GaAs from nuclear hyperfine interactions ”, R. F. Kiefl, M. Celio, T. L. Estle, G. M. Luke, S. R. Kreitzman, J. H. Brewer, D. R. Noakes, E. J. Ansaldo, and K. NishiyamaNuclear hyperfine structure of the anomalous muonium center (Mu*) in GaAs has been resolved in muon-spin-rotation frequency spectra and studied in detail by level-crossing-resonance spectroscopy. A comparison of the measured hyperfine parameters with the free-atom values indicates that... (Read more)
- 2789. phys. stat. sol. (b) 156, 325 (1989) , “EPR of Lithium-Induced Silicon-5dn Pairs in Silicon”, M. Höhne.A platinum-analogue to the lithium-induced silicon-gold pair, previously investigated, is now detected by EPR. The results underline the close similarity of platinum- and gold-related defects in silicon and suggest a remark concerning the absence of an EPR-proof of the isolated gold defect, contrary... (Read more)
- 2790. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 2791. Semicond. Sci. Technol. 4, 1000 (1989) , “The .Si ≡ Si3 defect at various (111)Si/SiO2 and (111)Si/Si3N4 interfaces”, A. Stesmans.The low-temperature (2 ≤ T ≤ 45 K) X- and K-band electron spin resonance (ESR) properties of the Si/SiO2 interfacial (111) PbO defect-identified with .Si ≡ Si3 and with the unpaired sp3 hybrid along (111)-as localised at three 'different'... (Read more)
- 2792. Solid State Commun. 70, 807 (1989) , “EPR Identification of a Trigonal FeIn Defect in Silicon”, P. Omling, P. Emanuelsson, W. Gehlhoff and H. G. GrimmeissA new electron paramagnetic resonance signal is observed in silicon which has been co-doped with indium and iron. The spectrum shows trigonal symmetry, and the involvement of one Fe and one In atom is proven from the observed hyperfine interactions. The defect is identified as an InS-Fei pair... (Read more)
- 2793. Sov. Phys. Semicond. 23, 44 (1989) , “Influence of random fields on the ESR spectrum of MnGa acceptors in p-type GaAs”, N. S. Averkiev, A. A. Gutkin, O. G. Krasikova, E. B. Osipov, M. A. Reshchikov
- 2794. Sov. Phys. Solid State 31, 1376 (1989) , “Equivalent States of Muonium and Hydrogen in Silicon”, R. B. Gelfand, V. A. Gordeev, Yu. V. Gorelkinski?, R. F. Konopleva, S. A. Kuten, A. V. Mudry?, N. N. Nevinny?, Yu. V. Obukhov, V. I. Rapoport, A. G. Ulyashin, V. G. Firsov.An experimental investigation was made of the hydrogenic states having an anisotropic hyperfine structure, which were formed in silicon single crystals as a result of implantation of high-energy muons and protons. The characteristics of the states of "anomalous" muonium (Mu*) and a hydrogen center (Si-AA9, investigated by the methods of muon spin rotation (μSR) and electron spin resonance (ESR) in silicon allowing for the isotopic effect, were found to be similar. This was the basis for hypothesizing the existence of two equivalent structures in silicon (Mu*) and Si-AA9), differing only with respect to the mass of the hydrogenic atom occuring in each of the centers. Semiemprecal cluster calculations were made of the electronic structure of the se centers under conditions of hydrogen (muonium) localization at different lattice interstices. The parameters of the hyperfine interaction and the electronic g factors of the impurity atom were calculated. The most probable configuration of the Mu* and Si-AA9 complexes, and their charge state were established.
- 2795. Superlatt. Microstruct. 5, 99-102 (1989) , “Electron-spin-resonance in an AlGaAs---GaAs single-side doped quantum-well”, F. Malcher, G. Lommer, M. Dobers and G. WeimannThe spin-splitting of subband Landau levels in an Al0.35Ga0.65As-GaAs single-side doped quantum well is calculated selfconsistently using an effective 2×2 subband Hamiltonian, which is derived from a five-level k · p-model by fourth order perturbation theory and includes remote band... (Read more)
- 2796. Appl. Phys. Lett. 53, 959 (1988) , “Characterization of semi-insulating GaAs wafers by room-temperature EL2-related photoluminescence”, Michio TajimaDeep level photoluminescence (PL) associated with the dominant midgap donor EL2 in semi-insulating (SI) GaAs crystals has been observed for the first time at room temperature. A broad emission band with a peak at 0.65 eV was observed always in commercial undoped SI GaAs wafers. The association of... (Read more)
- 2797. Appl. Phys. Lett. 53, 749 (1988) , “Physical origin of the DX center”, J. C. Bourgoin and A. MaugerWhen intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in... (Read more)
- 2798. Appl. Phys. Lett. 53, 508 (1988) , “Passivation of Paramagnetic Si-SiO2 Interface States with Molecular Hydrogen”, K. L. Brower.Dry thermal oxides were grown on (111) silicon substrates at 850 °C. The Pb centers associated with this (111) Si-SiO2 interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850 °C. The... (Read more)
- 2799. Appl. Phys. Lett. 53, 2546 (1988) , “Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1–xAs of low Al content”, P. M. Mooney, T. N. Theis, and S. L. WrightWe report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1xAs of very low Al content. For the first time, discrete emission rates corresponding to different... (Read more)
- 2800. Appl. Phys. Lett. 53, 1711 (1988) , “Observation of iron pileup and reduction of SiO2 at the Si-SiO2 interface”, Yoichi Kamiura and Fumio Hashimoto and Motohiro IwamiIt was found by secondary-ion mass spectrometry in-depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si-SiO2 interface of oxidized silicon crystals where iron was introduced by the indiffusion prior to the oxidation at 1000... (Read more)
- 2801. Appl. Phys. Lett. 52, 383 (1988) , “Direct evidence of the DX center link to the L-conduction-band minimum in GaAlAs”, E. Calleja, A. Gomez, and E. MuñozHydrostatic pressure techniques together with deep level transient spectroscopy (DLTS) measurements have shown that the Si-DX center in GaAlAs is linked to the L-conduction-band minimum. When hydrostatic pressure is applied to a 74% Al content sample, an exponential reduction of... (Read more)
- 2802. Appl. Phys. Lett. 52, 1689 (1988) , “Hole photoionization cross sections of EL2 in GaAs”, P. Silverberg, P. Omling, and L. SamuelsonThe spectral dependence of the hole photoionization cross section 0p" align="middle"> of EL2 in GaAs has been determined in absolute numbers at T=78 and 295 K. From simultaneous measurements of the electron photoionization cross section 0n" align="middle">,... (Read more)
- 2803. Appl. Phys. Lett. 52, 1161 (1988) , “Spin-dependent recombination in irradiated Si/SiO2 device structures”, R. L. Vranch, B. Henderson, M. PepperWe report studies of spin-dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p-channel metal-oxide-silicon field-effect transistors and metal-oxide-silicon wafers. Electron spin resonance transitions on the Pb center... (Read more)
- 2804. J. Appl. Phys. 63, 1086 (1988) , “Deep-level analysis in Te-doped GaAs0.62P0.38”, M. Kaniewska and J. KaniewskiDeep-level transient spectroscopy and photocapacitance techniques have been used to study the features of the main electron trap, with thermal activation energy equal to EB=0.39 eV, present in Te-doped GaAs0.62P0.38, obtained by vapor-phase epitaxy.... (Read more)
- 2805. J. Catalysis 111, 199-209 (1988) , “Structural analysis of ZnO/ZnCr2O4/Pd catalyst”, Lucio ForniThe ZnO/ZnCr2O4/Pd mixture is an effective catalyst for the preparation of pyrazines from diamines and glycols. The effects of the method of preparation, the Zn/Cr ratio, and the concentration of Pd have been studied by analyzing the catalyst structure using several techniques. In the coprecipitated... (Read more)
- 2806. J. Chem. Phys. 88, 481 (1988) , “Neon matrix ESR investigation of 69,71GaAs + generated by the photoionization of laser vaporized GaAs(s)”, Lon B. Knight, Jr. and J. T. PettyThe first spectroscopic results are reported for the 69,71GaAs + cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs + cation was trapped in neon matrices at 4 K for ESR investigations... (Read more)
- 2807. J. Electrochem. Soc. 135, 11C (1988) , “Degradation of III-V Opto-Electronic Devices”, O. Ueda
- 2808. J. Non-Cryst. Solids 104, 85-94 (1988) , “Radiation damage in vitreous fused silica induced by MeV ion implantation*1”, Shi Chengru, Tan Manqi , T. A. TombrelloThe nature of E′1 defects in vitreous fused silica induced by high energy (1–17 MeV) Cl and F ion implantation in terms of ion fluence, ion energy, saturation behavior and annealing feature, has been studied and compared with results obtained after 2 MeV proton and 0.633 MeV... (Read more)
- 2809. J. Phys. C: Solid State Phys. 21, L431 (1988) , “The model of a triplet self-trapped exciton in crystalline SiO2”, A L ShlugerMaking use of the self-consistent quantum chemical calculations dealing with the many-electron models of a crystal with a defect, the author has shown that the triplet exciton self-trapping in crystalline SiO2 occurs due to the displacement by about 0.3 AA of an oxygen ion from a regular... (Read more)
- 2810. J. Phys. C: Solid State Phys. 21, 4385 (1988) , “Optically detected spin coherence of the diamond N-V centre in its triplet ground state”, E. van Oort, N. B. Manson, M. GlasbeekFor the N-V centre in type Ib diamond the optical detection of spin coherence in the 3A state is reported. The 3A-state lifetime is studied as a function of the light intensity used for the optical excitation of the N-V centre by means of spin-locking experiments. The... (Read more)
- 2811. J. Phys. C: Solid State Phys. 21, 1869 (1988) , “Transient optical absorption and luminescence induced by band-to-band excitation in amorphous SiO2”, K Tanimura, C Itoh and N ItohThe transient optical absorption and luminescence induced by irradiation of amorphous SiO2 with an electron pulse have been measured. It is found that the transient optical absorption spectra do not depend on impurities and have a strong peak at 5.3 eV and a satellite peak at 4.2 eV. The... (Read more)
- 2812. Jpn. J. Appl. Phys. 27, 1808 (1988) , “ESR in Diamond Thin Films Synthesized by Microwave Plasma Chemical Vapor Deposition”, I. Watanabe, K. SugataA variety of diamond films of poor and good quality are synthesized by microwave plasma CVD from a mixture of hydrogen and CH4, CH3OH or C2H5OH. A comparative study on the ESR and Raman spectra of these films is performed. The diamond films of good quality... (Read more)
- 2813. Phys. Rev. B 38, 9674-9685 (1988) , “Hyperfine interactions in cluster models of the Pb defect center”, M. Cook, C. T. WhiteHyperfine interactions in the Pb center (denoted schematically as Si3?Si?) at the Si(111)/SiO2 interface have been studied with use of spin-polarized self-consistent multiple-scattering X? calculations on Si22H21/Si6O18... (Read more)
- 2814. Phys. Rev. B 38, 9657 (1988) , “Kinetics of H2 Passivation of Pb Centers at the (111) Si-SiO2 Interface”, K. L. Brower.This paper is concerned with the determination of the kinetic parameters and the chemical reactions that characterize the passivation of Pb centers with molecular hydrogen. Pb centers are paramagnetic defects at the (111) Si-SiO2 interface. In this study... (Read more)
- 2815. Phys. Rev. B 38, 6308 (1988) , “EPR Observation of a Platinum Pair Complex in Si”, H. J. von Bardeleben, D. Stivenard, M. Brousseau, J. Barrau.We report the observation of a (Pt-Pt) pair in Si. The defect is paramagnetic, with a g tensor of C2v symmetry and principal values of g[110]=2.1869, g[110]=1.5181, and g[001]=1.6317. The central hyperfine spectra show interaction with two equivalent Pt ions. This defect gives rise to an... (Read more)
- 2816. Phys. Rev. B 38, 6003 (1988) , “EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state”, G. A. Baraff, M. Lannoo, and M. SchlüterThe proposal that in its normal state EL2 is an AsGaAsi pair with a [111] axis and two-bond-length separation is tested by performing electronic structure calculations for that defect pair. The Asi is allowed to minimize its energy by moving along the [111] axis. Its... (Read more)
- 2817. Phys. Rev. B 38, 5453 (1988) , “Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures”, M. Dobers, K. v. Klitzing, G. WeimannElectron-spin resonance affects the magnetoresistivity of GaAs-AlxGa1-xAs heterostructures. With microwave frequencies of up to 70 GHz we studied systematically the spin splitting of the Landau levels in magnetic fields up to 14.5 T. The resonances within a certain Landau level... (Read more)
- 2818. Phys. Rev. B 38, 4388 (1988) , “Sign of the hyperfine parameters of anomalous muonium in diamond”, W. Odermatt, Hp. Baumeler, H. Keller, W. Kndig, B. D. Patterson, J. W. Schneider, J. P. F. Sellschop, M. C. Stemmet, S. Connell, D. P. SpencerObservations with the muon-spin-rotation (?SR) technique of the thermally activated transition from the isotropic muonium state Mu to the anisotropic muonium state Mu* in diamond are used to determine the sign of the Mu* hyperfine constants. It is found that the isotropic part... (Read more)
- 2819. Phys. Rev. B 38, 3998 (1988) , “Microscopic Structure of the NL10 Heat-Treatment Center in Silicon: Study of Electron-Nuclear Double Resonance”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe defect center giving rise to the Si-NL10 EPR spectrum has been investigated by the electron-nuclear double-resonance (ENDOR) technique. Three separate experiments have been performed: oxygen ENDOR of 17O nuclei, aluminum ENDOR of 27Al, and field-stepped ENDOR. As a result a... (Read more)
- 2820. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 2821. Phys. Rev. B 38, 1589 (1988) , “Motional Effects between On-Center and Off-Center Substitutional Nitrogen in Silicon”, Kouichi Murakami, Hitoshi Kuribayashi, and Kohzoh MasudaWe have found for the first time that the hyperfine splitting of the ESR of off-center substitutional nitrogen in silicon increases with increasing the temperature above ? 150 K. A model is proposed in which a hypothetical on-center substitutional N site exists in an adiabatic potential-energy... (Read more)
- 2822. Phys. Rev. B 38, 13291 (1988) , “Sulfur Pair in Silicon: 33S Electron-Nuclear Double Resonance”, A. B. van Oosten, C. A. J. Ammerlaan.Sulfur pairs in silicon are studied by electron paramagnetic resonance (EPR) and by 33S electron-nuclear double resonance. The trigonal symmetry and electron spin S=(1/2 are experimentally established. For magnetic field B parallel to the [111] pair axis, the EPR intensity is strongly... (Read more)
- 2823. Phys. Rev. B 38, 12752(R) (1988) , “Formation energies, abundances, and the electronic structure of native defects in cubic SiC”, C. Wang, J. Bernholc, R. F. DavisThe relative abundance of native point defects in cubic SiC has been studied via ab initio calculations as a function of composition and the Fermi-level position. For Si-rich cubic SiC, the SiC antisite is the dominant defect in n-type material, while the carbon vacancy, which is a double... (Read more)
- 2824. Phys. Rev. B 37, 8949 (1988) , “Electron-Nuclear Double Resonance of Interstitial Positively Charged Iron in Silicon”, J. J. van Kooten, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial iron in silicon was studied by means of electron-nuclear double resonance. We have found hyperfine interactions of the impurity electrons with eight shells of silicon neighbors containing 98 atoms. Because the ground state of interstitial Fe+... (Read more)
- 2825. Phys. Rev. B 37, 8298 (1988) , “Evidence for large lattice relaxation at the DX center in Si-doped AlxGa1-xAs”, P. M. Mooney, G. A. Northrop, T. N. Morgan, H. G. GrimmeissNew measurements of the energy dependence of the photoionization cross section of the DX center in Si-doped AlxGa1-xAs are reported. With the use of a tunable infrared laser which provides sufficient light intensity in a very narrow wavelength range, the photoionization cross... (Read more)
- 2826. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 2827. Phys. Rev. B 37, 6887 (1988) , “State and motion of hydrogen in crystalline silicon”, Peter Deák, Lawrence C. Snyder, and James W. CorbettThe open-shell version of the modified intermediate neglect-of-differential-overlap molecular-orbital method has been used to obtain the equilibrium positions of H, H+, and H2 in a 32-atom cyclic silicon cluster. Two shells of silicon neighbors around the defect have been... (Read more)
- 2828. Phys. Rev. B 37, 6353 (1988) , “Interaction of deuterium with defects in silicon studied by means of channeling ”, B. Bech NielsenThe lattice location of deuterium ion-implanted at low temperatures into silicon has been studied by means of the channeling technique. The channeling analysis is carried out at 30 K along the major axes and planes by means of the D(3He,p)4He nuclear reaction. Irradiation at 30... (Read more)
- 2829. Phys. Rev. B 37, 1043 (1988) , “Characterization of DX center in the indirect AlxGa1-xAs alloy”, M. Mizuta, K. MoriThe behavior of the DX center in AlxGa1-xAs(x?0.6) doped with Si and Se was investigated through photo-Hall measurements. The simultaneous existence of the shallow (metastable) and deep DX levels has been proven by the observation of persistent photoconductivity (PPC) whose... (Read more)
- 2830. Phys. Rev. Lett. 61, 2786 (1988) , “Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon”, Michael Stavola, K. Bergman, S. J. Pearton, and J. LopataThe motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the... (Read more)
- 2831. Phys. Rev. Lett. 61, 227 (1988) , “Si-NL10: Paramagnetic Acceptor State of the Silicon Thermal Donor”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. AmmerlaanElectron paramagnetic resonance studies on several donor- and acceptor-doped, oxygen-rich, silicon samples have been performed. The intensity of the spectrum Si-NL10 has been investigated as a function of heat-treatment time, temperature, and illumination. The results provide evidence for an... (Read more)
- 2832. Phys. Rev. Lett. 61, 1650 (1988) , “Electrical Detection of Nuclear Magnetic Resonance in GaAs-AlxGa1-xAs Heterostructures”, M. Dobers, K. v. Klitzing, J. Schneider, G. Weimann, K. PloogThe experimental investigation of the electron spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures via the ESR-induced change of magnetoresistivity reveals hysteresis and long-persisting memory effects. We have been able to prove the nuclear... (Read more)
- 2833. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbonsubstitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 2834. Phys. Rev. Lett. 60, 321 (1988) , “Lattice Location of Deuterium Interacting with the Boron Acceptor in Silicon”, B. Bech Nielsen and J. U. AndersenThe lattice location of deuterium diffused into boron-doped silicon has been studied by means of channeling. After removal of a 0.2-μm-thick surface layer, it is found that 87% of the deuterium atoms occupy near-bond-center sites, whereas the remaining 13% are located close to tetrahedral sites. It... (Read more)
- 2835. Phys. Rev. Lett. 60, 224 (1988) , “29Si Hyperfine Structure of Anomalous Muonium in Silicon: Proof of the Bond-Centered Model”, R. F. Kiefl* and M. Celio,T. L. Estle,S. R. Kreitzman, G. M. Luke, and T. M. Riseman,E. J. AnsaldoThe 29Si hyperfine structure of the anomalous muonium center in silicon has been resolved in muonspin-rotation spectra. The spectra of the weak 29Si satellite lines show that there are two equivalent Si neighbors on the symmetry axis with large positive p-like spin densities.... (Read more)
- 2836. Phys. Rev. Lett. 60, 2187 (1988) , “Metastability of the Isolated Arsenic-Antisite Defect in GaAs”, D. J. Chadi and K. J. ChangWe propose that a neutral As-antisite defect in GaAs has a stable fourfold and a metastable, threefold interstitial configuration differing by 0.24 eV in their energies. The barrier height from the metastable to the normal state is calculated to be 0.34 eV. The metastable geometry is predicted to... (Read more)
- 2837. Phys. Rev. Lett. 60, 2183 (1988) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 2838. Phys. Rev. Lett. 60, 1422 (1988) , “Theory of hydrogen passivation of shallow-level dopants in crystalline silicon”, K. J. Chang and D. J. ChadiThe stable structures, vibrational modes, and passivation mechanisms of an interstitial hydrogen atom in boron- and phosphorus-doped crystalline silicon are determined by an ab initio pseudopotential method. Our calculated formation energies for passivated H-B and H-P complexes are 2.5 and 2.0 eV,... (Read more)
- 2839. Phys. Stat. Sol. (b) 145, 609 (1988) , “Electron Paramagnetic Resonance of the Mn40 Cluster in Silicon”, J. Kreissl, W. Gehlhoff.In high-resistivity p-type and n-type silicon doped with manganese the Mn40 cluster is identified by EPR. The spectrum shows a characteristic hyperfine structure and an angular dependence of fine structure at 20 K. The analysis of the spectrum yield the assumption of the... (Read more)
- 2840. Solid State Commun. 67, 573 (1988) , “ESR investigations of CrCu and CrAu pairs in silicon”, D. Rodewald, S. Severitt, H. Vollmer and R. LabuschA new ESR spectrum ist observed after co-diffusion of Cr and Cu in Si. Because of its axial [111]-symmetry and its spin S = 3/2 it is interpreted as a (Cr1 Cus)° pair. (Read more)
- 2841. Solid State Commun. 65, 1039 (1988) , “Paramagnetic resonance of a Se-Al complex in silicon”, A. B. van Oosten and C. A. J. AmmerlaanIn selenium diffused, aluminum doped silicon a new electron paramagnetic resonance (EPR) spectrum, Si-NL31, was observed as a broad structure superposed on the selenium pair resonance. The EPR spectrum could not be analyzed directly, but an intense 27Al electron nuclear double resonance... (Read more)
- 2842. Sov. Phys. JETP 67, 1697 (1988) , “Electric-Dipole Spin Resonance of Localized Electron States at Dislocation Dipoles in Undeformed Oxygen-Containing Silicon”, V. M. Babich, N. P. Baran, A. A. Bugai, A. A. Konchits, B. D. Shanina.An electric-dipole spin resonance (EDSR) of new local centers at dislocation dipoles, formed as a result of prolonged annealing of undeformed silicon, was observed for the first time and investigated. At low temperatures (1.7-40 K) such undeformed silicon samples exhibited considerable microwave conductivity, the behavior of which was correlated with that of EDSR of new (Si-2K and Si-3K) centers. The intensity and profile of the EDSR signals due to these centers depended on the intensity and orientation of the E1 component of the microwave field and the absorption lines were in the form of asymmetric dispersion curves. Both the resonant and the microwave conductivity disappeared (reversibly) as a result of interband illumination and irreversibly as a result of ultrasonic excitation of considerable amplitude, electron or gamma-ray bombardment, or annealing at T ≥ 1150 K. The Rashba and Sheka theory of the EDSR was modified for the case of local dislocation centers. A theory was developed of the profile of the EDSR lines, which accounts completely for the experimental results.
- 2843. Sov. Phys. Semicond. 22, 666 (1988) , “Low-Symmetry Interstitial Defect in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.the ESR method was used in detection and investigation of a new paramagnetic center (designated H12 by the present authors) in silicon irradiated with large neutron doses. The concentration of the H12 centers was ~1016cm-3 when the radiation does was ~1019cm-2; it was independent of the nature of the dopant and the crystal growth method. The angular dependence of the ESR spectrum was described by a spin Hamiltonian with an electron spin s = 1/2 and a ĝ tensor characterized by the C1 (or Ci) symmetry. The hyperfine structure of the H12 spectrum included three groups of lines which correspond to one, two, and two or three sites in the zeroth, first, and second "shells" of the defects, respectively. High-temperature (T = 100-200 ℃) uniaxial compression resulted in partial reorientation of the defect, which was characterized by an activation energy Ea ~1 eV and a frequency factor ν0~1013 s-1. The structure of the immediate environment of the defect, its symmetry, and the similarity of the hyperfine structure parameters and of the ĝ tensor of the H12 and P6 spectra (the latter representing a complex of two interstitial atoms) were used, together with the nature and magnitude of teh response of the ESR spectrum to uniaxial compression, to propose a model of the H12 defect in the form of a complex of three interstitial atoms (I3+).
- 2844. Sov. Phys. Semicond. 22, 408 (1988) , “Electron spin resonance of bound holes in GaAs:Mn”, V. F. Masterov, K. F. Shtel'makh, M. N. Barbashov
- 2845. Appl. Phys. Lett. 51, 256 (1987) , “Interstitial defect reactions in silicon”, M. T. Asom, J. L. Benton, R. Sauer, and L. C. KimerlingDeep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as... (Read more)
- 2846. Appl. Phys. Lett. 51, 1155 (1987) , “Identification of a bistable defect in silicon: The carbon interstitial-carbon substitutional pair”, L. W. Song, B. W. Benson, and G. D. WatkinsBy using a combination of deep level transient spectroscopy (DLTS) and electron paramagnetic resonance techniques applied to samples of varying compositions, we identify the bistable defect at Ec 0.17 eV in irradiated n-type silicon as a carbon... (Read more)
- 2847. Appl. Phys. Lett. 51, 1103 (1987) , “Identification of an Interstitial Carbon-Interstitial Oxygen Complex in Silicon”, J. M. Trombetta and G. D. WatkinsAn electron paramagnetic resonance spectrum, observed in electron irradiated silicon and labeled Si-G15, is shown to originate from the same carbon-oxygen complex as does the well studied C-line photoluminescence spectrum with zero-phonon line at 0.79 eV.... (Read more)
- 2848. Appl. Phys. Lett. 50, 1733 (1987) , “Pentavacancies in Plastically Deformed Silicon”, M. Brohl, C. Kisielowski-Kemmerich, and H. AlexanderHigh-pressure/low-temperature plastic deformation of silicon leads to the appearance of new electron spin resonance active centers. One of them could be identified to be the pentavacancy Si-P1, which also can be produced by irradiation. Depending on the deformation axis the defect occurs in... (Read more)
- 2849. Appl. Phys. Lett. 50, 1663-1665 (1987) , “Electron spin resonance observation of defects in device oxides damaged by soft x rays”, B. B. Triplett, T. Takahashi, and T. SuganoWe report the use of vacuum soft x-ray (VXR) exposure to efficiently generate paramagnetic defects in thin oxide layers. The VXR technique allows the observation of an E related defect called the 74-G doublet in quantities as large as the E. This defect is the first paramagnetic... (Read more)
- 2850. Appl. Phys. Lett. 50, 1450 (1987) , “Paramagnetic centers at Si-SiO2 interfaces in silicon-on-insulator films”, W. E. CarlosElectron spin resonance measurements of silicon-on-insulator materials formed oxygen implantation are reported. The principal paramagnetic defect observed is a Pb center at the interface between Si and SiO2 precipitates in the Si film over the buried oxide layer.... (Read more)
- 2851. J. Appl. Phys. 62, 4786 (1987) , “The capture barrier of the DX center in Si-doped AlxGa1–xAs”, P. M. Mooney, N. S. Caswell, and S. L. WrightWe report measurements of the capture barrier for the DX center in Si-doped AlxGa1xAs as a function of the alloy composition. A model of the capture process which requires a distribution of capture barrier heights has been fit to the data for... (Read more)
- 2852. J. Appl. Phys. 62, 4404 (1987) , “Electron-Paramagnetic-Resonance Study of Heat-Treatment Centers in n-Type Silicon”, H. H. P. Th. Bekman, T. Gregorkiewicz, D. A. van Wezep, and C. A. J. AmmerlaanDonor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ``thermal-donor-'' and ``new-donor''-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results... (Read more)
- 2853. J. Appl. Phys. 62, 4305-4308 (1987) , “Fundamental differences between thick and thin oxides subjected to high electric fields”, William L. Warren and P. M. LenahanWe observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a ``trivalent silicon'' trapped hole center, termed E; in stressed thin oxides no E centers were... (Read more)
- 2854. J. Phys. C: Solid State Phys. 20, L367 (1987) , “Micro-emulsions in oil-water-surfactant mixtures: an Ising lattice gas model”, Kan Chen, C Ebner, C Jayaprakash and R PanditAn Ising lattice gas model is constructed for oil-water-surfactant mixtures. The phase diagram of this model is obtained by using mean-field theory and Monte Carlo simulations. The paramagnetic phase displays microstructures similar to those found in laboratory micro-emulsions. Also oil-rich,... (Read more)
- 2855. J. Phys. C: Solid State Phys. 20, 841 (1987) , “Self-ENDOR of Vanadium in Silicon”, J. J. van Kooten, D. van Kootwijk, C. A. J. Ammerlaan.Self-ENDOR measurements for the 51V isotope of double-positive vanadium in silicon are presented. The spin-Hamiltonian parameters have been determined. For an adequate description of the spectrum it was necessary to include a higher-order hyperfine term of the type S3I in the... (Read more)
- 2856. J. Vac. Sci. Technol. B 5, 762 (1987) , “Observation of optically detected magnetic resonance signals in AlxGa1–xAs”, M. G. Spencer, T. A. Kennedy, R. Magno, J. GriffinOptically detected magnetic resonance (ODMR) techniques which utilize weak spin effects on deep photoluminescence have been applied to MBE AlxGa1xAs. ODMR [unlike conventional electron paramagnetic resonance (EPR)] experiments is ideally suited for thin... (Read more)
- 2857. Jpn. J. Appl. Phys. 26, L273 (1987) , “Determination of Al Composition and DLTS Measurements of AlxGa1-xSb on GaSb Substrate”, Yoshikazu Takeda, Xiao Cheng Gong, Yu Zhu, Akio SasakiDLTS (Deep Level Transient Spectroscopy) measurements have been carried out to investigate the electron-trap levels in Te-doped AlxGa1-xSb over a composition range from 0 to 0.4. Deep electron-traps were not detected in Te-doped n-type GaSb and AlGaSb with Al... (Read more)
- 2858. Microscopy of semiconducting materials 463 (1987) , The Institute of Pysics,London,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Metal impurities at the SIO2-Si interface”, K Honda,T Nakanishi,A Ohsawa,N Toyokura
- 2859. Microscopy of semiconducting materials 39 (1987) , The Institute of Physics,London,A.G. Cullis and P.D. Augustus , “Defects induced by oxygen precipitation in silicon : a new hypothesis involving hexagonal silicon”, A bourret
- 2860. Nucl. Instrum. Methods Phys. Res. 22, 553-555 (1987) , “Ion channeling study of damage in neutron irradiated GaAs”, K. Kuriyama, M. Satoh, M. Yahagi, K. Iwamura, C. Kim, T. Kawakubo, K. Yoneda and I. KimuraThe lattice disorder in GaAs produced by fast neutrons with a fluence of 7 × 1017 n cm−2 has been investigated with 1.5-MeV 4He+ channeling and electron spin resonance (ESR) measurements. The slight change in the 100-aligned yield for irradiated crystals indicates that each primary... (Read more)
- 2861. Phys. Lett. A 125, 354 (1987) , “EPR Evidence of Helium-Oxygen-Vacancy Complexes in Crystalline Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevTwo new (S = 1) EPR spectra, labeled Si-AA7 and Si-AA8, arise from a helium-associated defect in crystalline silicon. Both are produced only in Czochralski-grown silicon by helium ion implantation at ≈ 20°C followed by annealing at ≈ 180°C and are stable to ≈... (Read more)Si| EPR| AA10 AA7 AA8 Helium vacancy .inp files: Si/V-He-O2 Si/AA10 Si/V-He-O1 | last update: Takeo Kitamura
- 2862. Phys. Rev. B 36, 9638-9648 (1987) , “Theory of the Pb center at the <111> Si/SiO2 interface”, A. H. EdwardsWe present a series of semiempirical calculations on threefold-coordinated silicon at the ?111? Si/SiO2 interface. These were performed on finite clusters of atoms with use of hydrogen terminators in an unrestricted Hartree-Fock formalism wherein we include lattice relaxations. We have... (Read more)
- 2863. Phys. Rev. B 36, 7726 (1987) , “Photoresponse of the FR3 electron-spin-resonance signal in GaAs”, U. Kaufmann, W. Wilkening, and M. BaeumlerThe photoresponse of the FR3 electron-spin-resonance (ESR) signal in GaAs has been studied. Excitation and quenching of the FR3 ESR is shown to result from the optically induced charge exchange between the FR3 center and the AsGa antisite. The FR3 ESR can be persistently excited with... (Read more)
- 2864. Phys. Rev. B 36, 6202 (1987) , “Photoelectron Paramagnetic Resonance of Pt- in Silicon”, P. Omling, P. Emanuelsson, H. G. Grimmeiss.The Pt- center in silicon has been identified by its characteristic electron-paramagnetic-resonance (EPR) signal. From photo-EPR measurements, the optical cross sections of holes for the Pt(0/-) transition have been determined at T=4.2 K. A comparison with corresponding optical cross... (Read more)
- 2865. Phys. Rev. B 36, 5982 (1987) , “Temperature dependence of hyperfine coupling of the anion antisite in III-V compounds”, A. Mauger, H. J. von Bardeleben, J. C. Bourgoin, M. LannooTemperature-dependent electron-paramagnetic-resonance experiments have been performed on the arsenic antisite defect in electron-irradiated GaAs. The 4.5% decrease of the central hyperfine coupling constant A upon heating from 4 to 250 K is much too large to be attributable to the thermal expansion... (Read more)
- 2866. Phys. Rev. B 36, 3528 (1987) , “Electron-Nuclear Double Resonance of Interstitial Chromium in Silicon”, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanThe positively charged state of interstitial chromium in silicon was investigated using electron-nuclear double resonance. We have found the hyperfine interaction of the impurity electrons with nine shells of surrounding silicon neighbors containing 102 atoms. The well-resolved fine structure due to... (Read more)
- 2867. Phys. Rev. B 36, 1332 (1987) , “Arsenic antisite defect AsGa and EL2 in GaAs”, B. K. Meyer, D. M. Hofmann, J. R. Niklas, and J.-M. SpaethThe microscopic structure of the paramagnetic anion antisite defect in semi-insulating GaAs was determined by optically detected electron-nuclear double resonance (ODENDOR). It is an arsenic-antisite–arsenic-interstitial (AsGa-Asi) pair. It is shown, by optically detected ESR... (Read more)
- 2868. Phys. Rev. B 35, 3810 (1987) , “EPR Studies of Heat-Treatment Centers in p-Type Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, C. A. J. Ammerlaan.The influence of acceptor doping (B,Al,Ga,In) on heat-treatment (HT) centers in oxygen-rich silicon was studied by means of EPR and resistivity measurements. EPR studies revealed that spectra Si-NL8 and Si-NL10 were practically the only ones which could be related to HT centers. They could be... (Read more)
- 2869. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 2870. Phys. Rev. B 35, 1566 (1987) , “Vacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, M. Sprenger, S. H. Muller, E. G. Sieverts, and C. A. J. AmmerlaanThe isolated vacancy in silicon has been studied with magnetic resonance spectroscopy. The EPR spectrum labeled Si-G2, identified as arising from the negative charge state of the vacancy, has been investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect... (Read more)
- 2871. Phys. Rev. Lett. 60, 2183 (1987) , “Theoretical Evidence for an Optically Inducible Structural Transition of the Isolated As Antisite in GaAs: Identification and Explanation of EL2?”, Jaroslaw Dabrowski, Matthias SchefflerWe performed parameter-free, self-consistent calculations of the electronic structures, total energies, and forces of the As antisite, of an As-interstitial-Ga-vacancy defect pair, and of various configurations between these limits. The total-energy surface exhibits an interesting metastability. The... (Read more)
- 2872. Phys. Rev. Lett. 59, 240 (1987) , “Electronic Structure of the Neutral Manganese Acceptor in Gallium Arsenide”, J. Schneider, U. Kaufmann, W. Wilkening, M. Baeumler, F. KhlA new maganese-related isotropic electron-spin-resonance signal at g=2.77 has been observed in GaAs. It is shown to arise from the neutral Mn acceptor, Mn0. The analysis gives an answer to the longstanding question of whether the structure of Mn0 correponds to the... (Read more)
- 2873. Phys. Rev. Lett. 59, 1702 (1987) , “Oxygen Incorporation in Thermal-Donor Centers in Silicon”, T. Gregorkiewicz, D. A. van Wezep, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe paper presents for the first time microscopic evidence for the presence of oxygen in thermal donor centers in silicon. The evidence as obtained by electron nuclear double resonance on the magnetic isotope 17O is conclusive. (Read more)
- 2874. Phys. Rev. Lett. 58, 1448 (1987) , “Selective Generation of Oriented Defects in Glasses: Application to SiO2”, J. H. StathisThe use of polarized light to generate oriented paramagnetic centers in glass is discussed. Analytic expressions are derived for the resultant EPR lineshape, and are compared to experimental results obtained for a-SiO2. Analysis of the EPR anisotropy provides information concerning the... (Read more)
- 2875. Physica B+C 146, 176-186 (1987) , “Lattice relaxations at substitutional impurities in semiconductors”, Matthias SchefflerThe positions of the crystal nuclei in the surrounding of substitutional impurities in Si and GaAs have been calculated using density-functional theory together with the local-density approximation for exchange and correlation and the total-energy gradient approach. These investigations give a... (Read more)
- 2876. Semicond. Sci. Technol. 2, 1 (1987) , “A new model of deep donor centres in AlxGa1-xAs”, J. C. M. Henning, J. P. M. AnsemsSpectroscopic investigations of Si-doped AlxGa1-xAs reveal that the deep donor ('DX centre') exhibits an electron-phonon interaction of moderate strength. The Huang-Rhys factor turns out to be 0.5 and the dominant coupling is with the LO1 phonons. These data lead to... (Read more)
- 2877. Solid State Commun. 64, 1489 (1987) , “Electron Paramagnetic Resonance of an Fe-Fe Pair in Silicon”, J. J. van Kooten, E. G. Sieverts and C. A. J. AmmerlaanThe electron paramagnetic resonance spectrum Si-NL24, which is associated with an iron-iron impurity pair and was earlier observed in electron-irradiated silicon, was produced as a quenched-in defect spectrum. Contrary to previous work we could resolve the complete angular dependence of the spectrum... (Read more)
- 2878. Solid State Commun. 61, 199-202 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun, Qin Guo-gang
- 2879. Solid State Commun. 61, 199 (1987) , “An EPR study on a new triclinic symmetry defect in neutron-irradiated FZ-silicon”, Wu En, Wu Shu-xian, Mao Jin-Chang, Yan Mao-Xun and Qin Guo-gangA new defect, labled as Si-PK1, has been observed with EPR (Electron Paramagnetic Resonance) in neutron irradiated FZ-Si grown in argon, hydrogen and vacuum. Its symmetry has been determined to be triclinic symmetry, the lowest possible symmetry. Si-PK1 has not been observed in CZ-Si. It is not related to any common impurities in Si, like oxygen, carbon, phosphorus and boron, and it should be an intrinsic defect. Combining with the empirical classification of g tensor, it is concluded that Si-PK1 may be a multi-vacancy cluster.
- 2880. Sov. Phys. JETP 66, 838 (1987) , “Combined Electron Resonance in a One-Dimensional Dislocation Band”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osipyan, A. I. Shalynin.The intensity and width of the combined electron resonance line for dislocations in silicon are investigated as functions of temperature, microwave electric field, and illumination. the resonance intensity grows as T-2.4 with decreasing temperature; this indicates that the electron mobility increases, and hence that band conduction rather than hoppimg along dislocations is the primary conduction mechanism. The energy of the dislocation band is found, and the saturation and width of the line are discussed
- 2881. Sov. Phys. Semicond. 21, 29 (1987) , “Vacancy-Impurity Defect with Spatially Separated Components in Electron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich, B. P. Kashnikov.The ESR metod was used to study heavily doped n-type silicon (dopant concentrarions up to 2×1018 cm-3) irradiated with large doses of 1 MeV electrons. The G16 spectrum dominated the results obtained. A superhyperfine structure (SHFS) was observed in the spectrum: it corresponded to the hyperfine interaction of a paramagnetic electron with nuclei of the 29Si silicon isotope which were located in four shells. A numerical analysis of the spectra yielded the SHFS line intensities and the numbers of equivalent sites in the shells: three sites in the first shell, one in the second, two in the third, and five or six in the fourth. A study of the G16 spectrum under unaxial compression conditions at temperatures 150-500 K revealed two activation energies (EA1 ≈ 0.25, EA2 ≈ 1.4 eV ) representing the process of reorientation of the investigated defect. The results obtained were used to propose a model of the G16 center. This was a vacancy-impurity complex in which the vacancy was localized in the second coordination sphere relative to the impurity atom. The mechanism resulting in a spatial separation of the components in this defect was considered. It was assumed that the impurity atom occuring in the G16 center was carbon.
- 2882. Deep Centers in Semiconductors 399 (1986) , ed. by S. T. Pantelides, Gordon and Breach, New York. , “The Mid-Gap Donor Level EL2 in Gallium Arsenide”, G. M. Martin, S. Makram-Ebeid
- 2883. Appl. Catalysis 21, 133-147 (1986) , “Investigation on the state of copper in copper-zinc oxide biphasic catalyst by EPR and adsorption microcalorimetry”, E. Giamello, B. Fubini and P. LauroBinary Cu---ZnO catalysts active for methanol synthesis and the CO shift reaction were studied by EPR and by adsorption calorimetry. The EPR spectrum of Cu(II) in the calcined catalyst (CuO---ZnO) was studied, and also its evolution on reduction of the calcined into the reduced form... (Read more)
- 2884. Appl. Phys. Lett. 49, 348-350 (1986) , “Interface traps and Pb centers in oxidized (100) silicon wafers”, G. J. Gerardi, E. H. Poindexter, P. J. Caplan, N. M. JohnsonThe band-gap energy distribution of Pb centers on oxidized (100) Si wafers has been determined and compared with interface electrical trap density Dit. Two different Pb centers are observed on (100) Si: Pb0,... (Read more)
- 2885. Appl. Phys. Lett. 48, 972-974 (1986) , “Electron spin resonance of [1-11], [-111], and [11-1] oriented dangling orbital Pb0 defects at the (111) Si/SiO2 interface”, A. StesmansThe observation of (111) Si/SiO2 interface Pb0 defects (modeled as 0SiSi3) with dangling bonds positioned along [11], [11], and [11] from low-temperature (T30 K) electron spin resonance measurements is reported. This is connected with... (Read more)
- 2886. Appl. Phys. Lett. 48, 1282 (1986) , “Photoresponse of the EL2 absorption in undoped semi-insulating GaAs”, B. Dischler, F. Fuchs, and U. KaufmannThe response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In... (Read more)
- 2887. Appl. Phys. Lett. 48, 1270 (1986) , “Capture and emission kinetics of individual Si:SiO2 interface states ”, M. J. Kirton and M. J. UrenBy studying the random telegraph signals in the drain current of small area metal-oxide-semiconductor field-effect transistors as a function of temperature, we show that carrier capture into individual interface states takes place via a multiphonon process. We demonstrate that the interface trap... (Read more)
- 2888. Appl. Phys. Lett. 48, 1000 (1986) , “Configurationally multistable defect in silicon”, A. Chantre and L. C. KimerlingWe report the isolation of a new defect in n-type silicon following room-temperature electron irradiation. Using deep level transient spectroscopy (DLTS) combined with minority-carrier injection at 250 K, we show that the DLTS peak usually ascribed to the phosphorus-vacancy pair hides a... (Read more)
- 2889. J. Appl. Phys. 59, 3255-3266 (1986) , “Thermodynamic and Kinetic Considerations on the Equilibrium Shape for Thermally Induced Microdefects in Czochralski Silicon”, W. A. Tiller, S. Hahn, F. A. Ponce.Using thermodynamic and kinetic considerations, we explain the quasiequilibrium, morphological, and structural characteristics of thermally induced oxide precipitates in Czochralski silicon. A model based upon the formation of Frenkel defects at the silicon/silica interface is used to explain the... (Read more)
- 2890. J. Phys. C: Solid State Phys. 19, 841 (1986) , “Carbon-related radiation damage centres in Czochralski silicon”, G Davies, A S Oates, R C Newman, R Woolley, E C Lightowlers, M J Binns and J G WilkesWe show that the intensity of the 790 meV electronic absorption line and the C(3) vibrational line at 865 cm-1 correlate in Czochralski (CZ) silicon regardless of carbon concentrations, radiation doses and stages of annealing. Three weak vibrational lines at 529, 550 and 742... (Read more)
- 2891. J. Phys. C: Solid State Phys. 19, 6417 (1986) , “EPR of defects in silicon-on-insulator structures formed by ion implantation. I. O+ implantation”, R. C. Barklie, A. Hobbs, P. L. F. Hemment, K. Reeson.EPR measurements at X band and room temperature have been made of defects produced by implanting (100) and (111) silicon wafers with doses >1018 O- cm-2 using 300 keV O- and 400 keV O2+ ions and an implantation temperature of... (Read more)
- 2892. J. Phys. C: Solid State Phys. 19, 6211 (1986) , “Charge-trapping properties of germanium in crystalline quartz”, W Hayes and T J L JenkinGermanium impurity in alpha -quartz as a well known deep electron trap and hence makes possible the study of hole trapping processes by EPR techniques. The authors have carried out an EPR study of SiO2:Ge X-irradiated in a microwave cavity at 4K and show that Ge is an amphoteric impurity... (Read more)
- 2893. J. Phys. C: Solid State Phys. 18, L795 (1986) , “0.79 eV (C line) defect in irradiated oxygen-rich silicon: excited state structure, internal strain and luminescence decay time”, K Thonke, A Hangleiter, J Wagner and R SauerHighly excited states of the 0.79 eV luminescent defect observed in photoluminescence excitation (PLE) measurements are interpreted as effective-mass (EMT) states of a pseudo-donor with Ei=38.3 meV. The interpretation implies that the 1s ground state of the donor electron is fivefold... (Read more)
- 2894. JETP Lett. 43, 255 (1986) , “Combined Resonance at Dislocations in Silicon”, V. V. Kveder, V. Ya. Kravchenko, T. R. Mchedlidze, Yu. A. Osipyan, D. E. Khmelnitski?, A. I. Shalynin.A combined resonance corresponding to transitions between Zeeman levels of electrons trapped in a one-dimensional dislocation band has been observed in plastically deformed silicon. The electrons are trapped by virtue of their motion along a dislocation under the influence of an rf electric field. (Read more)
- 2895. Phys. Lett. A 118, 347 (1986) , “An EPR study of a new C2 symmetry defect in neutron-irradiated silicon”, E. Wu, J. C. Mao, S. X. Wu, M. X. Yan, G. G. Qin.A new defect, labeled Si-PK4, has been observed with EPR in neutron-irradiated FZ-silicon grown in argon. Its g tensor reveals that Si-PK4 has monoclinic-II symmetry (C2 point group) with one symmetry axis pointing to 100. According to the empirical classification of g... (Read more)
- 2896. Phys. Rev. B 34, 7524-7533 (1986) , “Fundamental radiation-induced defect centers in synthetic fused silicas: Atomic chlorine, delocalized E' centers, and a triplet state”, D. L. Griscom and E. J. FriebeleA series of synthetic fused silicas of diverse OH contents was subjected to 100-keV x irradiations at 77 K and investigated by electron-spin-resonance techniques at ?110 K or higher temperatures. Spectra were recorded at X-band frequencies (?9.29.3 GHz) both as the first derivative of absorption... (Read more)
- 2897. Phys. Rev. B 34, 7192 (1986) , “Identification of a defect in a semiconductor: EL2 in GaAs”, H. J. von Bardeleben, D. Stivenard, D. Deresmes, A. Huber, J. C. BourgoinWe present here a complete set of experimental results, obtained by electron paramagnetic resonance (EPR) and deep-level transient spectroscopy (DLTS), on the so-called EL2 defect in GaAs. It is obtained on semi-insulating materials and specially doped materials grown as semi-insulating ones, which... (Read more)
- 2898. Phys. Rev. B 34, 4511 (1986) , “Spin Delocalization of Interstitial Iron in Silicon”, D. A. van Wezep, T. Gregorkiewicz, E. G. Sieverts, and C. A. J. AmmerlaanThe apparent contradiction between a covalently delocalized picture of the Si:Fei0 system, suggested among others by the large reduction of the central nucleus hyperfine interaction parameter as compared to the free ion, and the localized picture as has emerged from the... (Read more)
- 2899. Phys. Rev. B 34, 3610-3619 (1986) , “Dipolar interactions between dangling bonds at the (111) Si-SiO2 interface”, K. L. Brower, T. J. HeadleyIn this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 2900. Phys. Rev. B 34, 3610 (1986) , “Dipolar Interactions between Dangling Bonds at the (111) Si-SiO2 Interface”, K. L. Brower, T. J. Headley.In this paper a computational model is developed which allows one to calculate the contribution to the Zeeman linewidth arising from magnetic dipole-dipole interactions between unpaired electrons in the dilute limit, which in our specific application correspond to dangling bonds (Pb... (Read more)
- 2901. Phys. Rev. B 34, 1381 (1986) , “Paramagnetic Resonance of a New-Oxygen-Donor Related Center in Silicon”, R. Wrner and O. F. SchirmerIn Czochralski-grown silicon annealed in the temperature range between 650 and 800 C, an anisotropic electron-spin resonance (ESR) spectrum was observed. Analysis of the angular dependence reveals monoclinic (Cs) symmetry of the representative g tensor, with one of the principal axes... (Read more)
- 2902. Phys. Rev. B 34, 1360 (1986) , “Identification of the arsenic-antisite-arsenic-vacancy complex in electron-irradiated GaAs”, H. J. von Bardeleben, J. C. Bourgoin, and A. MiretWe report the observation by electron paramagnetic resonance of a new irradiation-induced defect in n-type GaAs. It is characterized by the spin Hamiltonian parameters S=1 / 2, g=1.97±0.06, A=0.068±0.004 cm-1, I=3 / 2 (100%) and attributed to the complex formed by an... (Read more)
- 2903. Phys. Rev. B 33, 5880 (1986) , “Antisite-related defects in plastically deformed GaAs”, P. Omling, E. R. Weber, L. SamuelsonOptical absorption measurements on plastically deformed GaAs show that the total extrinsic absorption increases with deformation, while the quenchable EL2 absorption stays constant. The nonquenchable extrinsic absorption is observed to be proportional to the EPR measured AsGa containing... (Read more)
- 2904. Phys. Rev. B 33, 4471 (1986) , “Strain broadening of the dangling-bond resonance at the (111) Si-SiO2 interface”, K. L. BrowerIt is observed that the linewidth and line shape of the Zeeman resonance associated with dangling bonds at the (111)Si-SiO2 interface (Pb centers) vary with the direction of the applied magnetic field. An analysis of the line shape of this resonance indicates that it can be... (Read more)
- 2905. Phys. Rev. B 33, 4320 (1986) , “DX center: Crossover of deep and shallow states in Si-doped AlxGa1-xAs”, Atsushi Oshiyama, Shuhei OhnishiA new microscopic model for the origin of the DX center in Si-doped AlxGa1-xAs is proposed based on discrete variational X? cluster calculations. The calculated level structure shows that the antibonding A1 state of Si, which lies in the conduction bands as a... (Read more)
- 2906. Phys. Rev. B 33, 2890 (1986) , “Identification of the arsenic vacancy defect in electron-irradiated GaAs”, H. J. von Bardeleben and J. C. BourgoinWe report the systematic observation of a new electron-paramagnetic-resonance spectrum in a wide series of electron-irradiated GaAs crystals. The spectrum consists of a partially resolved multiplet of 700-G linewidth and an effective g factor of 2.00 for B∥[001] and 2.04 for B∥[110]. Comparison... (Read more)
- 2907. Phys. Rev. Lett. 57, 611 (1986) , “Thermal Donors in Silicon: A Study with ENDOR”, J. Michel, J. R. Niklas, and J. -M. SpaethENDOR experiments on paramagnetic thermal donors are presented for the first time. They show that the ESR spectra of all thermal donors identified by ir bands are superimposed in one narrow line ("NL8"). Only 29Si superhyperfine interactions were found and determined for up to seven... (Read more)
- 2908. phys. stat. sol. (b) 138, 337 (1986) , “A Silicon-Gold Pair in Silicon Investigated by EPR”, M. Höhne.A new gold-related defect in silicon is observed after IR irradiation. Though a thermal treatment including additional doping with lithium is necessary for the production of this centre, the lithium obviously does not participate in the paramagnetic state. The paramagnetic state is mainly localized... (Read more)
- 2909. Solid State Commun. 60, 871-872 (1986) , “The formation of arsenic antisite defects during plastic deformation of GaAs”, E. R. WeberThe electron paramagnetic resonance (EPR) signal of arsenic antisite defects increases after plastic deformation of GaAs. This has been attributed in the preceeding paper to the formation of only compensating acceptors rather than additional antisites. A critical discussion of this alternative model... (Read more)
- 2910. Solid State Commun. 60, 867-870 (1986) , “Antisite defects in plastically-deformed GaAs: An alternative analysis”, R. BrayA revision is presented of the accepted view that the observed increease in electron paramagnetic resonance (EPR) with plastic deformation in GaAs is due to the generation of As antisite defects. It is proposed instead that only compensating deep acceptor defects are generated. The increase of the... (Read more)
- 2911. Solid State Commun. 58, 811 (1986) , “ESR Investigation of MnCu Pairs in Silicon”, H. Dietrich, H. Vollmer and R. LabuschThe new ESR spectra are observed after co-diffusion of Mn and Cu in Si. The experimentally observed spins are interpreted as (MnCu)+ and (MnCu)−-pairs with axial (1 1 1)-symmetry. To our knowledge these are the first ESR-identified, Cu-related centres in silicon. (Read more)
- 2912. Solid State Commun. 57, 615-617 (1986) , “THE OPTICALLY DETECTED MAGNETIC RESONANCE OF DANGLING BONDS AT THE Si/SiO2 INTERFACE”, K. M. Lee, L. C. Kimerling, B. G. Bagley, W. E. QuinnThe optically detected magnetic resonance (ODMR) observation of dangling bonds at the Si/SiO2 interface (Pb centers) is reported in this Communication. A luminescence quenching signal is identified as arising from the Pb center through its axially symmetry g tensor along the <1 1 1#62;... (Read more)
- 2913. Sov. Phys. Solid State 28, 1862 (1986) , “Electron states having spin S ≥ 1 at dislocations in silicon”, M. N. Zolotukhin
- 2914. Sov. Phys. JETP 64, 612 (1986) , “Spin-Dependent Effects Due to Triplet Centers in Irradiated Silicon”, L. S. Vlasenko, M. P. Vlasenko, V. N. Lomasov, V. A. Khramtsov.A study has been made of the optical polarization of nuclei and spin-dependent photoconductivity in silicon crystals containing structural defects which are in excited triplet states when illuminated, with a nonequilibrium distribution of the populations of magnetic sublevels. Mixing of triplet states differing iin spin projection is necessary for the onset of an optical polarization of nuclei as the nuclei participate in a hyperfine interaction with the triplet centers. A correlation is found between the angular distribution and the temperature dependence of the intensities of the ESR lines of triplet centers and of the degree of optical polarization of the nuclei. It is shown that the saturation of the ESR transition of the triplet centers leads to a change in the photoconductivity of silicon crystals. A similar change in photoconductivity is obsserved at anticrossing of the magnetic sublevels of triplet centers.
- 2915. Sov. Phys. Semicond. 20, 688 (1986) , “Spin-Dependent Recombination and Low-Frequency ESR Spectroscopy of Impurities and Defects in Silicon”, L. S. Vlasenko, V. A. Khramtsov.the change in the photoconductivity of silicon crystals due to saturation of ESR transition in paramagnetic recombination centers was used to record the ESR spectra of radiation defects in weakly irradiated silicon crystals. The ESR spectra of samples with defect concentration below 1012 cm-3 were recorded on the basis of a change in the Q factor of the spectrometer resonator because of a change in the photocarrier density at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photocarrierdensity at the resonance. The ESR signals were observed in weak magnetic fields at low frequencies. The changes in the photoconductivity of the samples were detected in the absence of a resonance alternating field at values of a static magnetic field corresponding to the points of intersection of magnetic sublevels of the paramagnetic centers with spin S > 1/2. The proposed experimental method was used to record a number of new ESR spectra of irradiated silicon crystals.
- 2916. Sov. Phys. Solid State 28, 1862 (1986) , “Electron States Having Spin S ≥ 1 at Dislocations in Silicon”, M. N. Zolotukhin.The kinetics of restoration of the ESR spectrum fine structure lines in silicon crystals containing dislocations is the same for bound spins at dislocations as for the ESR dark spectrum of broken (dangling) bonds at dislocations after illumination of the crystal has ended. It is of the barrier type and is controlled by hole capture at the broken-bond level. The fine structure of the dislocation ESR spectrum is determined by the defect structure of the dislocations, which depends considerably on the way in which they were formed in the crystals.
- 2917. Superlatt. Microstruct. 2, 273-278 (1986) , “Electron states in GaAs/Ga1−xAlxAs heterostructures: Subband Landau-levels*1”, G. Lommer, F. Malcher and U. RsslerNonparabolicities (3,4) of the bulk band structure are taken into account in the calculation of subband Landau-levels in the n-inversion layer of GaAs/Ga1−xAlxAs heterostructures. We calculate the deviation of the cyclotron mass from the isotropic parabolic band case (2) for magnetic fields... (Read more)
- 2918. Appl. Phys. Lett. 47, 970 (1985) , “Identification of EL2 in GaAs”, H. J. von Bardeleben, D. Stievenard, J. C. Bourgoin, A. HuberCombining electron paramagnetic resonance under optical excitation, deep level transient spectroscopy, electron irradiation, annealing, and quenching on LEC semi-insulating GaAs and lightly Si-doped material grown in the same way as the semi-insulating material, we have shown that (i) the irradiated... (Read more)
- 2919. Appl. Phys. Lett. 46, 882 (1985) , “Atomic deuterium passivation of boron acceptor levels in silicon crystals”, J. C. Mikkelsen, Jr.B-doped Si wafers were subjected to atomic-deuterium (D) plasmas to simulate the reactions of atomic hydrogen with substitutional B acceptor levels. Secondary ion mass spectrometry was used to profile the in- and out-diffusion of D, and spreading resistance was used to measure the distribution of... (Read more)
- 2920. Appl. Phys. Lett. 46, 787 (1985) , “Absence of oxygen diffusion during hydrogen passivation of shallow-acceptor impurities in single-crystal silicon”, N. M. Johnson and M. D. MoyerIt was recently proposed that hydrogen compensation of shallow-acceptor impurities in single-crystal silicon is due to the diffusion of both monatomic oxygen and hydrogen into silicon which combine at acceptor sites to form neutral acceptor-OH complexes. It is shown here that oxygen does not diffuse... (Read more)
- 2921. Appl. Phys. Lett. 46, 781 (1985) , “Photoresponse of the AsGa antisite defect in as-grown GaAs”, M. Baeumler, U. Kaufmann, and J. WindscheifThe photoresponse of the As + Ga" align="middle"> antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown semi-insulating GaAs as a function of illumination time and photon energy h. The As + Ga" align="middle"> EPR signal intensity... (Read more)
- 2922. Defects and defect processes in nonmetallic solids 1-464 (1985) , John.Wiley and sons , W. Hayes, A.M. Stoneham. WileyCHAPTER1. Electronic Properties CHAPTER2. Interatomic Forces and Atomic Motions CHAPTER3. Lattice Defects CHAPTER4. Spectroscopy of Solids CHAPTER5. Electronic Properties of Point Defects CHAPTER6. Radiation-Induced defect processes CHAPTER7. Properties of Surfaces CHAPTER8. Special Systems APPENDIX: Notation for Defects PHYSICAL CONSTANTS; Units and Conversion Factors SUPPLEMENTARY READING REFERENCES INDEX
- 2923. J. Appl. Phys. 58, 3996 (1985) , “Catastrophic degradation of InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy”, Osamu Ueda, Kiyohide Wakao, Satoshi Komiya, Akio Yamaguchi, Shoji Isozumi, and Itsuo UmebuCatastrophically degraded InGaAsP/InGaP double-heterostructure lasers grown on (001) GaAs substrates by liquid-phase epitaxy, emitting at 727 and 810 nm are investigated by photoluminescence topography, scanning electron microscopy, transmission electron microscopy, and energy dispersive x-ray... (Read more)
- 2924. J. Appl. Phys. 58, 2448 (1985) , “Thermal strain-induced degradation mechanism in the visible AlGaAs/GaAs laser”, M. Ikeda, O. Ueda, S. Komiya, and I. UmebuWe fabricated and life-tested visible AlGaAs/GaAs channeled-substrate-planar-type lasers and found that some are degraded within 100 h of operation. We investigated these using photoluminescence and transmission electron microscopic images. The characteristic features in photoluminescence images are... (Read more)
- 2925. J. Appl. Phys. 57, 5176 (1985) , “Damage center formation in SiO2 thin films by fast electron irradiation”, R. L. PfefferThe concentrations of E centers (ESR-active oxygen vacancies) produced by 30160 keV electron irradiation have been measured in thermal SiO2 films at doses far exceeding any previously reported. The dependences of these concentrations on electron energy and fluence were... (Read more)
- 2926. J. Appl. Phys. 57, 1783 (1985) , “Annealing kinetics of the gold-iron complex in silicon”, S. D. Brotherton, P. Bradley, and A. GillGold and iron are known to interact in silicon at temperatures below ~400 °C to form gold-iron pairs with band-gap energy levels of Ev +0.434 eV and Ec 0.354 eV. In this work, the details of the formation and dissociation of these pairs... (Read more)
- 2927. J. Appl. Phys. 57, 1523 (1985) , “Defect structures in rapidly degraded InGaAsP/InGaP double-heterostructure lasers”, Osamu Ueda, Kiyohide Wakao, Akio Yamaguchi, Shoji Isozumi, and Satoshi KomiyaRapidly degraded InGaAsP/InGaP double-heterostructure lasers grown on (001)-oriented GaAs substrates by liquid phase epitaxy have been investigated by photoluminescence topography and transmission electron microscopy. 100" align="middle">-dark-line defects and 110" align="middle">-dark-line defects... (Read more)
- 2928. J. Appl. Phys. 24, L689 (1985) , “Photo-Electron Paramagnetic Resonance Study of AsGa Antisite Defect in As-Grown GaAs Crystals of Different Stoichiometry”, Noriaki Tsukada, Toshio Kikuta, Koichi IshidaThe photoresponses of the antisite defect AsGa+ electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting... (Read more)
- 2929. J. Electrochem. Soc. 132, 3034 (1985) , “Quantitative Spectroscopy of Interstitial Oxygen in Silicon”, B. Pajot and H. J. Stein and B. Cales and C. NaudQuantitative data are presented on the infrared (IR) absorption of interstitial oxygen in oxygen-rich silicon using Fourier transform spectroscopy. Besides the wel-known and 1106 cm-1 room temperature IR bands, due to the symmetric and antisymmetric vibrations of the Si2O entity, respectively, three other bands at 1227, 1720, and 1013 cm-1 are reported, whose intensities are scaled with those of the 515 and 1106 cm-1 bands. The band at 1227 cm-1 has often been confused with an oxygen precipitate band observed at 1225 cm-1 in annealed silicon. Evidence is given that the 1227 cm-1 band is related to interstitial oxygen. It is also shown that another band at 1720 cm-1 is a combination of the antisymmetric mode of Si2O with a phonon combination of the silicon lattice. A weak band at 1013 cm-1 is reported for the first time, and it is attributed to an overtone of the 515 cm-1 mode. (Read more)
- 2930. J. Electrochem. Soc. 132, 1707 (1985) , “Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon”, T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, and M. WatanabeA reliable conversion factor for the infrared absorptiometry of oxygen in silicon has been determined by round-robininfrared measurement followed by charged particle activation analysis with the 16O(3He,p)18F reaction. As for theround-robin samples, 70 dislocation-free CZ silicon wafers with oxygen contents ranging from 3 to 20 × 1017 at.-cm-3 andthicknesses of 2, 1, and 0.5 mm were carefully prepared by five organizations. A good linear relationship has been obtainedbetween the absorption coefficient and the oxygen content. The relationship is expressed as [oxygen concentration (at.-cm-3)] = (3.03 ± 0.02) × 1017 × [absorption coefficient (cm-1)]. (Read more)
- 2931. J. Phys. C: Solid State Phys. 18, L967 (1985) , “Thermal donors in silicon: oxygen clusters or self-interstitial aggregates”, R C NewmanThere is a long-standing view that small aggregates of oxygen impurities in silicon produced by heat treatments at 450 degrees C are the defects that act as thermal donors. Recently it has been established that these treatments also lead to the generation of self-interstitials. It is now suggested... (Read more)
- 2932. J. Phys. C: Solid State Phys. 18, 2623 (1985) , “Magnetic resonance spectroscopy in semiconducting diamond”, C. A. J. Ammerlaan, R. van KempIn type-IIb semiconducting diamond an electron paramagnetic resonance spectrum, which is labelled C-NL1, is observed. For detection of the resonance low sample temperatures (T<4K) and the application of a large uniaxial stress (P approximately=1 GPa) are required. The spectrum can be analysed... (Read more)
- 2933. JETP Lett. 42, 38 (1985) , “Nonresonant Spin-Dependent Conductivity in Silicon”, L. S. Vlasenko, V. A. Khramtsov.A nonresonant change has been discovered in the photoconductivity of irradiated silicon crystals in a weak magnetic field. This new effect is shown to result from a spin-dependent recombination of photoexcited carriers through triplet centers. A change in the photoconductivity in the absence of a resonant alternating magnetic field arises at anticrossing points of magnetic sublevels of triplet centers. (Read more)
- 2934. Jpn. J. Appl. Phys. 24, L143 (1985) , “Direct Evidence for the DX Center Being a Substitutional Donor in AlGaAs Alloy System”, Masashi Mizuta, Masami Tachikawa, Hiroshi Kukimoto, Shigeru MinomuraAn experimental result that the DX center appears in GaAs:Si and GaAsd:Sn under hydrostatic pressure of about 30 kbars has been obtained for the first time. This indicates clearly that the DX center in the AlGaAs alloy system is due to a substitutional donor itself (not a complex referred to as... (Read more)
- 2935. Jpn. J. Appl. Phys. 24, 279 (1985) , “Solubility and Diffusion Coefficient of Oxygen in Silicon ”, Yoshiko Itoh and Tadashi NozakiThe solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250... (Read more)
- 2936. Mater. Res. Soc. Symp. Proc. 46, 525 (1985) , “Electronic Ground State of Iron-Acceptor Pairs in Silicon”, C. A. J. Ammerlaan, J. J. van Kooten.Iron-acceptor impurity pairs, consisting of a positively charged iron ion trapped on an interstitial site in the vicinity of an ionized acceptor, in silicon were observed by electron paramagneric resonance for all common acceptor dopants (B, Al, Ga, In). The Zeeman splittings of these pairs, to which both spin and orbital momenta contribute, cover the range between 1.1 and 6.4. An interpretation of these spectroscopic spliting factors is presented, shich considers the effects of the crystal field - of cubic, axial, or lower symmetry - and of spin-orbit interaction on the 4F ground state of the iron ion in a (3d)7 configuration. It is not due to a dynamical Jahn-Teller effect. nor due to hybridization. Rather, it is proposed that a significant reduction, by about 80%, of the orbital magnetism arises from covalency.
- 2937. Mater. Res. Soc. Symp. Proc. 46, 39 (1985) , “Electronic Defect Characterization”, H. G. Grimmeiss.Knowledge concerning the electronic properties of defects is crucial for the understanding of the behaviour of these defects in semiconductors. Considering the important role defects play in most currently used devices it is not surprising that a great number of different measurement techniques have been developed with the aim of not only quantitatively determining the electronic parameters but also of identifying the defect chemically and evaluating the local environment of such defects. In most cases this goal can not be achieved by applying only a single (defect property) measureing technique. In this paper an attempt is made, using two different examples. to show what achivements in defect characterization and identification can be obtained by combining two or more different measurement techniques. The first example is a single substitutional impurity, sulfur in silicon, while the second example deals with a more complex defect, the oxygen-vacancy center in silicon. In both cases a number of techniques such as different junction space charge measurements, Hall effect, absorption, ESR, photo-ESR, ENDOR photoconductivity, irradiaton and annealing processes, and even theory were used to study the defect. The advantages and limitations of various methodologies will be discussed.
- 2938. Mater. Res. Soc. Symp. Proc. 46, 263 (1985) , “Identity of the NL8 EPR Spectrum with Thermal Donors in Silicon”, K. M. Lee, J. M. Trombetta, G. D. Watkins.The effect of uniaxial stress on the NL8 EPR spectrum in 450℃ heat-treated silicon containing thermal donors (TD's) is described. Changes in the relative amplitudes of the NL8 spectral components are interpreted as arising from electronic redistribution between the differently oriented defects. These changes are consistant in sign and magnitude with those predicted for TD+ from observed stress effects on the TD IR and DLTS spectra.
- 2939. Mater. Res. Soc. Symp. Proc. 46, 237 (1985) , “ENDOR-Investigation of Al++ and Al++-Al- Pairs in Silicon”, J. R. Niklas, J. M. Spaeth, G. D. Watkins.With Electron Nuclear Double Resonance (ENDOR) ligand superhyperfine (shf) interactions were investigated for 7 neighbor shells of the interstitial Al++ center (Si-G18) and for 10 neighbor shells of the Al++-Al- pair center (Si-G19). All shells of the interstitial center exhibit undistorted Td symmetry confirming the defect model derived from earlier experiments. In the pair center the shf interaction of the Al++ with the neighboring Al nucleus shows a pure [111]-symmetry, also the shf interactions with the outer Si-neighbor shells exactly reflect this axial [111]-symmetry of the defect. The magnitude of the quadrupole interaction of the neighboring Al nucleus clearly shows, that this nucleus is a nearest neighbor of the Al++. From the angular dependence and the intensity ratios of ENDOR lines of the pair center it can be excluded that any additional impurity is associated with the Al++-Al- pair at least within the first 3 neighbor shells of the Al++. The influence of the Al- neighbor on the hyperfine axes of the first [111] Si-neighbors is negligible and is also remarkably small for the other Si-neighbors. The magnitudes of the ligand shf interactions gor the pair center are closely related to those of the Al++ center. A comparison of these values for both centers allows a definite assignment of the measured shf interactions to their corresponding neighbor shells for the Al++ center.
- 2940. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 2941. Microscopic identification of electronic defects in semiconductors 453 (1985) , Materials Research Socirty Symposia Proceedings,Noble M. Johnson, Stephen G. Bishop, George D. Watkins , “Excitation spectroscopy on silicon using color center lasers : study of the thermally induced p line (0.767eV) defect”, J Wagner,A Dornen,R Sauer
- 2942. Phys. Lett. A 110, 157 (1985) , “EPR of Neutral Vacancy-Helium Centers in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi and S. S. AjazbaevIn this letter we report the first observation by EPR of helium-associated defects in solid. Two new (S = 1) EPR spectra, labeled Si-AA5 and Si-AA6, arise from the association of helium and intrinsic defects in crystalline silicon. Both are produced by helium ion implantation at room temperature and... (Read more)
- 2943. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 2944. Phys. Rev. B 32, 6965 (1985) , “Reduced g factor subband Landau levels in AlGaAs/GaAs heterosructures”, G. Lommer, F. Malcher, and U. RösslerThe reduction of the g factor of subband Landau levels in the n-inversion channel of AlGaAs/GaAs heterostructures, which has been observed in electron-spin-resonance experiments by Stein, von Klitzing, and Weimann [Phys. Rev. Lett. 51, 130 (1983)], can be explained quantitatively by the taking into... (Read more)
- 2945. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 2946. Phys. Rev. B 32, 530 (1985) , “Muonium centers in GaAs and GaP ”, R. F. Kiefl, J. W. Schneider, H. Keller, W. Kndig, W. Odermatt, and B. D. Patterson, and K. W. Blazey and T. L. Estle and S. L. RudazThe authors present the first observation of muon spin rotation for normal (Mu) and anomalous (Mu*) muonium centers in compound semiconductors, specifically GaP and GaAs. As in the elemental semiconductors, the muonium defect centers are characterized by a large isotropic hyperfine... (Read more)
- 2947. Phys. Rev. B 31, 5561 (1985) , “Donorlike excited states of the thermally induced 0.767-eV (P line) defect in oxygen-rich silicon ”, J. Wagner and A. Drnen and R. SauerPhotoluminescence-excitation spectroscopy with a KCl: Tl color-center laser is performed on the thermally induced defect in oxygen-rich silicon which emits the 0.767-eV (P) no-phonon line. We find two sets of excited states. One set 20-30 meV above the P transition is identified with... (Read more)
- 2948. Phys. Rev. B 31, 5525-5528 (1985) , “Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon”, N. M. JohnsonExperimental results are presented which identify the following chemical reaction as being responsible for compensation of shallow-acceptor impurities when single-crystal silicon is exposed to monatomic hydrogen: A-+h++H0↔(AH)0, where A-... (Read more)
- 2949. Phys. Rev. Lett. 55, 2340 (1985) , “Bistability and Metastability of the Gallium Vacancy in GaAs: The Actuator of EL2?”, G. A. Baraff and M. SchluterWe have used the Green's-function technique to carry out electronic-structure and total-energy calculations for the gallium vacancy in GaAs and for the nearest-neighbor (arsenic vacancy)-(arsenic antisite) pair which results when an adjacent arsenic atom hops over and fills the gallium vacancy. The... (Read more)
- 2950. Phys. Rev. Lett. 55, 2204 (1985) , “Identification of the 0.82-eV Electron Trap, EL2 in GaAs, as an Isolated Antisite Arsenic Defect”, M. Kami?ska, M. Skowro?ski, W. KuszkoEL2 is a technologically important deep level in GaAs whose identification has been the subject of intense study. In this paper we present uniaxial stress and magnetic field experiments which establish for the first time that EL2 has tetrahedral symmetry and is, therefore, an isolated point defect.... (Read more)
- 2951. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 2952. phys. stat. sol. (b) 130, K51 (1985) , “New EPR Spectrum in Helium-Implanted Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, A. A. Kim.Recently /1 to 4/ a unique class of electron-vibronic photoluminescence spectra in silicon has been found. These spectra have been observed exclusively after noble gas (in particular, helium) ion implantation and partial annealing, above 200 ℃. Tkachev et al. /1, 3/ have suggested that noble gas... (Read more)
- 2953. Prog. Surf. Sci. 20, 9-103 (1985) , “Chemisorption and charge transfer at ionic semiconductor surfaces: Implications in designing gas sensors”, W. GopelA detailed atomistic understanding of charge transfer reactions between semiconductor surfaces and adsorbing particles is essential for designing gas sensors or metal-oxide catalysts.This will be demonstrated in a discussion of thermodynamically or kinetically controlled solid/gas interactions at... (Read more)
- 2954. Rev. Sci. Instrum. 56, 2050 (1985) , “Application of a microwave preamplifier to an ESR spectrometer”, Günter GramppThe aim of this investigation was to measure the sensitivity improvement reached on a commercial homodyne X-band ESR spectrometer by installing a microwave GaAsFET type preamplifier (8.59.6 GHz). Up to a power level of 1 mW a factor of 3 was obtained in signal improvement.... (Read more)
- 2955. Solid State Commun. 53, 1135 (1985) , “Electron Paramagnetic Resonance on Shallow Acceptor Impurities in Silicon”, R. van Kemp, C. A. J. Ammerlaan.The shallow acceptor impurities boron, aluminum, gallium and indium in silicon were investigated by electron paramagnetic resonance (EPR) using a K-band superheterodyne spectrometer. The EPR spectra of these impurities were observed at low temperatures (1.4K < T < 4.2K) under conditions of zero and small values of external uniaxial stress. the observed angular dependence of the resonance lines can be analyzed using the effective spin Hamiltonian H = HB + Hε with J = 3/2 [1], HB = ?, Hε = ?. By making a least squares fit to the experimental data, the g-values g1' and g2' and the deformation potential parameters b' and d' were obtained. Under a variety of conditions peculiar line shapes and width were observed. We considered teh following mechanism to explain the observed characteristics of the resonance lines: double and triple quantum transitions, linear and quadratic effects of strain, dynamic Jahn-Teller distortion, transition probabilities and the effect of relaxation time on spin dynamics. Double and triple quantum transitions can occur in this system because j = 3/2. They can be recognized because their intensity is proportional to the square and the cube, respectively, of the microwave power. However, in the experiment no such dependence on the microwave power was found. The expressions thus obtained can account qualitatively for the line width and asymmetry when it is assumed that the strain distribution in the crystal is approximately Gaussian. These effects can not account for a peculiar narrow dip that is present in the centers of the resonance lines with ΔMj = 1 and ΔMj = 2 [2]. A dynamic Jahn-Teller distortion of the acceptor atoms would have result that there are no sites with strain zero. Together with the random strains present in the crystal, the effect will be a shift of intensity away from the magnetic field at which the center of the line occurs. Calculation of the transition probabilities for the ΔMj = 1, 2, 3 transitions showed that these do not become very small in any of the cases. An explanation of the dip in the center of the resonance line can be offered in the following way [3]. The broad resonance lines for the ΔMj = 1 and ΔMj = 2 transitions are a superposition of spin packets which are shifted due to the random internal strains. For small values of the strains, packets will overlap, allowing a form of cross-relaxation to occur. this results in broadening of the homofeneous width and smaller intensity at the centerof the resonance line. (Read more)
- 2956. Sov. Phys. Semicond. 19, 1198 (1985) , “Nonorientable Divacancies in Neutron-Irradiated Silicon”, A. V. Dvurechenski?, A. A. Karanovich.The electron spin resonance method was used in na investigation of heavily doped n-type silicon [phosphorus concentration NP = (2-10)×1018 cm-3] irradiated with reactor neutrons in doses 5×1017-4×1019 cm-2. In addition to the spectra of the familiar G7 (divacancy) and P3 (tetravacancy) centers, the investigated samples exhibited two new spectra denoted by H9 and H10. The parameters of the spin Hamiltonian of these spectra were determined. According to the results obtained, the H9 spectrum was due to nonorientable divacancies located in zones of strong lattice deformation zones was ε ≥ 10-3. It was postulated that H10 is a vacancy-type defect with a paramagnetic electron localized on a broken bond of a silicon atom. Some of the characteristics of the P3 and P6 spectra observed for heavily doped n-type silicon indicated that the manifestation of these centers depends on the Fermi level position.
- 2957. Sov. Phys. Solid State 27, 1093 (1985) , “Electron Spin Resonance of Strain Probes in Gadolinium-Doped Silicon”, A. A. Buga?, V. E. Kustov, Yu. G. Semenov, V. I. Shakhovtsov, V. L. Shindich.The angular dependences of the ESR line width were studied for interstitial Fe0 and Mn0 in gadolinium-doped silicon. It was found that the addition of gadolinium causes considerable internal elastic deformations of the crystal. A theoretical calculation is given whereby the mean deformation charge density can be determined from the measured ESR line widths of strain--sensitive centers.
- 2958. Appl. Phys. Lett. 44, 96-98 (1984) , “Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures”, P. M. Lenahan and P. V. DressendorferWe find that two paramagnetic ``trivalent silicon'' centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures. Applied Physics Letters is copyrighted by The American Institute of Physics. ... (Read more)
- 2959. Appl. Phys. Lett. 44, 907 (1984) , “Identification of AsGa antisite defects in liquid encapsulated Czochralski GaAs”, K. Elliott, R. T. Chen, S. G. Greenbaum, R. J. WagnerWe have identified the electron paramagnetic resonance (EPR) spectrum of the As on a Ga site (AsGa) defect in bulk undoped liquid encapsulated Czochralski grown GaAs. The intensity of the EPR signal can be correlated with the concentration of compensating carbon acceptors in the GaAs... (Read more)
- 2960. Appl. Phys. Lett. 44, 514 (1984) , “Infrared spectrum of interstitial oxygen in silicon”, Michael StavolaA stress-induced dichroism study of the 1106-cm1 and 515-cm1 modes of interstitial oxygen in silicon has been undertaken in order to assign the 515-cm1 mode. It has been found that the 515-cm1 mode is due to the symmetric stretching... (Read more)
- 2961. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
- 2962. J. Appl. Phys. 56, 3394 (1984) , “Electron paramagnetic resonance spectroscopy of fast neutron-generated defects in GaAs”, A. Goltzene, B. Meyer, C. Schwab, S. G. Greenbaum, R. J. Wagner, T. A. KennedyA series of fast neutron-irradiated GaAs samples (neutron fluence range of 2×10152.5×1017 cm2) has been investigated by electron paramagnetic resonance (EPR) spectroscopy. The EPR spectra at 9 GHz exhibit a broad (~1 kG) Lorentzian singlet at... (Read more)
- 2963. J. Appl. Phys. 56, 2844-2849 (1984) , “Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution”, E. H. Poindexter, G. J. Gerardi, M. -E. Rueckel, P. J. Caplan, N. M. Johnson, D. K. BiegelsenEnergy distribution of Pb centers (·SiSi3) and electronic traps (Dit) at the Si/SiO2 interface in metal-oxide-silicon (MOS) structures was examined by electric-field-controlled electron paramagnetic resonance (EPR)... (Read more)
- 2964. J. Appl. Phys. 56, 2655 (1984) , “Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials”, G. M. Martin, E. Estève, P. Langlade, and S. Makram-EbeidFast neutron irradiation of n-GaAs mainly induces two deep electron traps in the band gap. The first of these is referred to as EL6 and has an energy level at Ec 0.35 eV, where Ec is the conduction band minimum; the second one has a wide... (Read more)
- 2965. J. Appl. Phys. 56, 1670 (1984) , “Oxygen-related thermal donors in silicon: A new structural and kinetic model”, A. Ourmazd and W. Schrter and A. BourretA structural model for the oxygen-related thermal donors produced at moderate temperatures (<500 °C) is presented, where electrical activity commences with clusters containing five or more oxygen atoms and arises from a silicon atom at the center of the cluster. The donor activity of a... (Read more)
- 2966. J. Appl. Phys. 55, 852 (1984) , “Stress relaxation in unirradiated and in helium ion bombarded glass plates: Dimensional stability”, William PrimakThe deformation of thin glass plates during bombardment with 140-keV He + ions was measured with an external capacitor. The contour of the plates was determined interferometrically before irradiation, after irradiation, and after aging for several years. These results showed that the... (Read more)
- 2967. J. Appl. Phys. 55, 825 (1984) , “Early stages of oxygen segregation and precipitation in silicon”, A. Bourret, J. Thibault-Desseaux, and D. N. SeidmanThe early stages of oxygen segregation at dislocation and precipitation in the bulk have been investigated by high-resolution electron microscopy in Czochralski grown silicon. Two kinds of precipitates are observed: a crystalline silica phase, coesite, and an amorphous phase. Both forms coexist... (Read more)
- 2968. J. Appl. Phys. 55, 3495-3499 (1984) , “Hole traps and trivalent silicon centers in metal/oxide/silicon devices”, P. M. Lenahan and P. V. DressendorferWe report electron spin resonance (ESR) measurements of E-center (a ``trivalent silicon'' center in SiO2) density as well as capacitance versus voltage (C-V) measurements on -irradiated metal/oxide/silicon (MOS) structures. We also report a considerable refinement of... (Read more)
- 2969. J. Non-Cryst. Solids 66, 133-138 (1984) , “Local order and defects in MBE-grown a-GaAs”, S. G. Greenbaum, D. J. Treacy, B. V. Shanabrook, J. Comas and S. G. BishopElectron spin resonance (ESR), and 71Ga and 75As nuclear magnetic resonance (NMR) measurements have been performed on a 20μ thick film of a-GaAs deposited on a SiO2 substrate by molecular beam epitaxy. The ESR spectrum exhibits the four-line S=1/2, I=3/2 hyperfine pattern characteristic of the... (Read more)
- 2970. J. Phys. C: Solid State Phys. 17, L911 (1984) , “ENDOR Investigation of Se+ in Silicon”, S. Greulich-Weber, J. R. Niklas, J. -M. Spaeth.Se+ donors in silicon from deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine (SHF) interactions with eight shells of 29Si neighbour nuclei were analysed and it was confirmed that the electron spin is... (Read more)
- 2971. J. Phys. C: Solid State Phys. 17, L233 (1984) , “Persistent spectral hole burning of colour centres in diamond”, R. T. Harley, M. J. Henderson, R. M. MacfarlaneFour zero-phonon lines of defect centres in diamond (GR1 (741 nm), N-V (637 nm), H4 (496 nm) and N3 (415 nm)) have been shown to exhibit persistent spectral hole burning. The phenomenon appears to be a rather general one in diamond and should prove very powerful for elucidation of the nature of... (Read more)
- 2972. J. Phys. C: Solid State Phys. 17, 2943 (1984) , “ODMR of recombination centres in crystalline quartz”, W Hayes, M J Kane, O Salminen, R L Wood and S P DohertyThe well known 2.8 eV luminescence band in quartz has been studied using optically detected magnetic resonance (ODMR). A triplet state with a very large fine-structure splitting is found to contribute to the emission. The principle axes of the triplet are identified. The possibility that the... (Read more)
- 2973. J. Phys. Chem. 88, 5255-5260 (1984) , “Dynamic Interchange among Three States of Phosphorus (4+) in ?-Quartz. 2.”, Y. Uchida, J. Isoya, J. A. WeilThe dynamic process due to electron jumping among three states with different sp hybrid directions in the quasitetrahedral P4+ center [PO4]0 in a-quartz has been investigated by 10-GHz electron paramagnetic resonance, over the temperature range 40 to 400 K. The relative populations (mole fractions ƒІ and ƒІІ) of the ground state P(І) and two degenerate thermally excited states P(ІІ) were determined from the measured EPR absorption line intensity ratios and from the line positions of the averaged state P(A), respectively, in the slow and fast kinetic regions. The temperature dependence of the mole fractions has been explained by considering vibrational sublevels in the potential well describing each state. The jump rate was also obtained, via EPR absorption line-width analysis based on the Bloch equations, in both the slow and the fast regions. The characteristic parameters of the dynamic process, Le., energy separation and vibrational sublevels of the ground and excited states, and barrier height between these, have been determined. (Read more)
- 2974. Jpn. J. Appl. Phys. 23, 1594 (1984) , “DX Deep Centers in AlxGa1-xAs Grown by Liquid-Phase Epitaxy”, Masami Tachikawa, Masashi Mizuta, Hiroshi KukimotoDeep levels, the so-called DX centers, in the AlxGa1-xAs alloy system grown by liquid-phase epitaxy (LPE) were investigated by junction-capacitance spectroscopy. The dependence of the activation energy of the DX center in Sn-doped... (Read more)
- 2975. Nucl. Instrum. Methods Phys. Res. B 1, 427-430 (1984) , “Fast neutron damage in tetrahedral ANB8−N Compounds: Effects of ionicity”, A. Goltzene, B. Meyer , C. SchwabIrradiation of crystals with neutrons of high energy leads to the formation of different types of defects, such as point defects or extended defects, like clusters or even amorphous regions in the displacement spike. Their nature and their creation yields depend on the chemical nature of the... (Read more)
- 2976. Phys. Rev. B 30, 931 (1984) , “Optical-pumping study of spin-dependent recombination in GaAs”, Daniel PagetOptical-pumping techniques provide a convenient way to study-dependent recombination (SDR) processes at deep impurity centers in semiconductors. Indeed, by changing the polarization of excitation light, it is possible to modify the photoelectron spin polarization in a controlled way. This produces a... (Read more)
- 2977. Phys. Rev. B 30, 6292 (1984) , “Electron Nuclear Double Resonance of Interstitial Iron in Silicon”, S. Greulich-Weber, J. R. Niklas, E. R. Weber, J. -M. Staeth.We report on the first electron nuclear double-resonance investigation of an interstitial deep-level defect in silicon. For interstitial iron the superhyperfine interactions with six shells of neighbor nuclei comprising 42 silicon atoms could be resolved and determined. The localization of the two... (Read more)
- 2978. Phys. Rev. B 30, 4564 (1984) , “Electron Paramagnetic Resonance on Iron-Acceptor Pairs in Silicon”, J. J. van Kooten, G. A. Weller, and C. A. J. AmmerlaanExperimental data obtained by electron paramagnetic resonance on silicon doped with aluminum and iron are presented. After quenching the sample and a short stay at room temperature, two spectra, labeled Si-NL27 and Si-NL28, were observed. It is concluded that the spectra originate from two Fe-A1... (Read more)
- 2979. Phys. Rev. B 30, 2260 (1984) , “Theory of electronically stimulated defect migration in semiconductors ”, Sokrates T. Pantelides, Atsushi Oshiyama*, Roberto Car, and Paul J. KellyWe develop a theory for carrier-capture-enhanced, recombination-enhanced, and athermal defect migration in semiconductors. Contrary to assumptions made recently in describing such processes in Si, we find that knowledge of energy levels or even total energies at only the initial equilibrium and... (Read more)
- 2980. Phys. Rev. B 29, 2819 (1984) , “Electron Paramagnetic Resonance of Pt- in Silicon: Isolated Substitutional Pt Versus Pt-Pt Pairs”, R. F. Milligan, F. G. Anderson, G. D. Watkins.We report a study of the EPR line shape for Pt- in silicon as a function of the relative abundance of the magnetic (I=1/2) isotope 195Pt. The structure recently noted by Henning and Egelmeers [Phys. Rev. B 27, 4002 (1983)] is insensitive to the 195Pt abundance and... (Read more)
- 2981. Phys. Rev. Lett. 53, 1364 (1984) , “Observation of Co-Dimer Formation during Thermal Annealing of Co-Implanted Si ”, G. Langouche, M. de Potter, and D. SchroyenThe formation of Co dimers is observed in a Mössbauer-spectroscopy study of the thermal annealing of Co-implanted Si. The amount of dimers is found to depend strongly on the annealing temperature, on the implantation dose, and on the Si doping. At measuring temperatures between 4 and 300 K... (Read more)
- 2982. Phys. Rev. Lett. 53, 1187 (1984) , “Optically Detected Electron-Nuclear Double Resonance of As-Antisite Defects in GaAs”, D. M. Hofmann, B. K. Meyer, F. Lohse, and J. -M. SpaethThis Letter reports on the first optically detected electron-nuclear double-resonance (ENDOR) measurements of a paramagnetic semiconductor defect in which ligand hyperfine interactions could be resolved. In semi-insulating GaAs: Cr the ENDOR lines of the first-shell 75As neighbors of the... (Read more)
- 2983. Phys. Rev. Lett. 52, 851 (1984) , “Optical Properties of As-Antisite and EL2 Defects in GaAs”, B. K. Meyer, J.-M. Spaeth, M. SchefflerThis Letter reports the first application of an ESR-tagged magnetic circular dichroism measurement to a paramagnetic deep-level defect in a semiconductor. In semi-insulating GaAs two new absorption bands are found at 1.05 and 1.29 eV. Both bands are identified as intracenter electronic transitions... (Read more)
- 2984. Phys. Rev. Lett. 52, 1814 (1984) , “Microscopic Theory of Atomic Diffusion Mechanisms in Silicon ”, Roberto Car*, Paul J. Kelly, Atsushi Oshiyama, and Sokrates T. PantelidesWe report self-consistent Green's-function total-energy calculations which provide, for the first time, a firm theoretical framework for understanding the microscopic mechanisms of atomic diffusion in Si. We find that the self-interstitial has negative-U properties, roughly the same formation energy... (Read more)
- 2985. phys. stat. sol. (a) 86, 313 (1984) , “New EPR Defects in Si<Al>”, A. V. Dvurechenskii, B. P. Kashnikov, V. V. Suprunchik.Two new paramagnetic centres, labeled Si-H5 and Si-H6 are found in silicon containing aluminium (6 × 1017 to 5 × 1018 cm-3) and irradiated with high dose of 1 Me V electrons (up to 2 × 1020 cm-2). Spin-Hamiltonian constants of the Si-H5... (Read more)
- 2986. phys. stat. sol. (a) 82, 533 (1984) , “The Effect of Heat Treatment on Compensated CZ Silicon”, P. I. Baranskii, V. M. Babich, N. P. Baran, A. A. Bugay, Yu. P. Dotsenko, V. B. Kovalchuk.Thermally induced donors in Czochralski-grown p-Si crystals are investigated by both EPR and Hall techniques. The results confirm that thermally induced donors are double donors. A model to account for paramagnetic properties of thermal donors is proposed. (Read more)
- 2987. phys. stat. sol. (a) 82, 235 (1984) , “Nature of Thermal Donors in Silicon Crystals”, M. Suezawa, K. SuminoThe formation process of thermal donors in Czochralski-grown silicon crystals at 471.3 ℃ is studied by means of the optical absorption at a low temperature. The development of six kinds of thermal donors, termed TD-1 through TD-6, is followed separately. Experimental results obtained are analyzed... (Read more)
- 2988. Solid State Commun. 51, 951 (1984) , “Electron Paramagnetic Resonance of a Nitrogen-Related Centre in Electron Irradiated Silicon”, M. Sprenger, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanThe observation by electron paramagnetic resonance of a centre related to nitrogen as an impurity in silicon is reported. While all previously reported nitrogen-related centres in silicon were produced by nitrogen implantation, the present centre is observed after electron irridiation of... (Read more)
- 2989. Solid State Commun. 51, 665 (1984) , “ESR of Selenium Pairs (Se+2) in Silicon”, R. Wrner, O. F. Schirmer.A slight anisotropy of the Se+2 ESR is resolved, revealing [111] axial symmetry. The pair groundstate is a2u in D3d symmetry, consistent with the almost complete s-character at the Se sites. The value of g|| is correlated with the binding energy of... (Read more)
- 2990. Solid State Commun. 51, 127 (1984) , “Carbon and Oxygen Isotope Effects in the 0.79 eV Defect Photoluminescence Spectrum in Irradiated Silicon ”, K. Thonke, G. D. Watkins$ and R. SauerThe 0.79 eV photoluminescence spectrum known to emerge in oxygen-rich irradiated silicon is studied in 13C and 18O enriched crystals. The peincipal no-phonon transition at 0.79 eV splits onto a doublet in the 13C enriched sample in a way directly demonstrating that one carbon atom per center is optically active. In contrast, no isotope effects are observed in the local mode replicicas. Doping the silicon with 18O slightly influences two local mode replicas giving the first direct evidence that oxygen is involved in the defect. (Read more)
- 2991. Sov. Phys. Semicond. 18, 49 (1984) , “Influence of rare-earth elements on the carrier mobility in epitaxial InP and InGaAs films”, N. T. Bagraev, L. S. Vlasenko, K. A. Gatsoev, A. T. Gorelenok, A. V. Kamanin, V. V. Mamutin, B. V. Pushny, V. K. Tibilov, Yu. P. Tolparov, A. E. Shubin
- 2992. Sov. Phys. Semicond. 18, 162 (1984) , “Problem of the charge state of manganese impurities in GaAs:Mn”, D. G. Andrianov, Yu. A. Grigor'ev, S. O. Klimonski?, A. S. Savel'ev, S. M. Yakubenya
- 2993. Sov. Phys. Semicond. 18, 1102 (1984) , “Electron Spin Resonance of Defects in Si:Al Irradiated with Large Electron Doses”, A. V. Dvurechenski?, B. P. Kashnikov, V. V. Suprunchik.Silicon containing aluminium in concentrations 6×1017-5×1018 cm-3 and irradiated with 1MeV electrons in doses of 1×1018-2×1020 cm-2 was found to have a new paramagnetic center designated H5. The ESR method was used to analyze the structure of the H5 center, which showed that the center has a spin of 1/2 and a {110} symmetry. The principal components of the g tensor and their orientations relative to the crystallographic axis were determined: g1=2.0063, g2=2.0005, g3=2.0036(±0.0001), θ=13±2°, where θ is the angle between the [110] and g1 directions, where both g1 and g2 lie in a (110) plane and g3||[110]. A hyperfine structure appeared because of the interaction of an unpaired electron with two inequivalent nuclei of the 29Si isotope and with the 27Al nucleus. The constant of the hyperfine interaction with the 27Al nucleus was (4.0±0.7)×10-4 cm-1. The hyperfine initeraction tensor for one of the 29Si nuclei was found to be axially symmetric and its principal values were detemined: A⊥=41.6×10-4 and A||= 62.5×10-4 cm-1. The densities of the wave function of the unpaired electron at each of the 29Si atoms(~24%) of which 15% is in the s state and 85% in the p state) and at 27Al(0.3%) were found. An analysis of the results obtained led to the conclusion that the H5 center consists of a divacancy and an interstitial aluminium atom located in a {110} plane. The unpaired electron is located on an extended orbital of the divacancy (representing about 50% of the wave funcrion densiry.
- 2994. Sov. Phys. Solid State 26, 66 (1984) , “EPR Study of Si-S1-Center Optical Excitation and Relaxation Processes in Irradiated Silicon”, L. S. Vlasenko, I. M. Zaritskii, A. A. Konchits, B. D. Shanina.For the first time transition processes in the excited state of the neutral oxygen-containing vacancy in silicon (Si-S1 center) were studied by EPR over a wide temperature range (2.5-100 K). By comparing the experimental results with theory, it was established that the formation of the excited triplet state occurs with participation of photoexcited current carriers in contrast with a number of similar systems where excitation takes place within the centers. The different spins in the triplet state are due to the selective nature of their decay processes while the formation processes are nonselective. The temperature dependence above 20 K of dynamic system characteristics is determined by the inclusion of an intrinsic spin-relaxation mechanism of triplet states.
- 2995. Surf. Sci. 141, 255-284 (1984) , “X AND K BAND ESR STUDY OF THE Pb INTERFACE CENTRES IN THERMALLY OXIDIZED p-TYPE (001)Si WAFERS AT LOW TEMPERATURES AND INFLUENCE OF MEDIUM-DOSE As+ ION IMPLANTATION”, A. Stesmans, J. Braet, J. Witters, R. F. DekeersmaeckerElectron spin resonance (ESR) experiments have been carried out at cryogenic temperatures (4.2 T 35 K) and room temperatures at 9.0 and 20.9 GHz on the Pb0 and Pb1 (commonly referred to as Pb) spin-active defects residing at the Si/SiO2 interface. The ESR lineshapes were shown to display gaussian... (Read more)
- 2996. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 2997. Appl. Phys. Lett. 43, 563-565 (1983) , “Characteristic electronic defects at the Si-SiO2 interface”, N. M. Johnson, D. K. Biegelsen, M. D. Moyer, S. T. Chang, E. H. Poindexter, P. J. CaplanOn unannealed, thermally oxidized silicon, electron spin resonance reveals an oriented interface defect which is termed the Pb center and identified as the trivalent silicon defect. Deep level transient spectroscopy (DLTS) reveals two broad characteristic peaks in the... (Read more)
- 2998. Appl. Phys. Lett. 43, 1111 (1983) , “29Si hyperfine structure of unpaired spins at the Si/SiO2 interface”, K. L. BrowerThe hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2 interface (Pb centers) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interaction S··I arises from the... (Read more)
- 2999. Appl. Phys. Lett. 42, 961 (1983) , “Kinetics of self-interstitials generated at the Si/SiO2 interface”, K. Taniguchi and D. A. Antoniadis and Y. MatsushitaThe kinetics of self-interstitials in silicon were investigated by monitoring oxidation stacking faults on backside oxidized silicon wafers in the temperature range 11001200 °C in a wet O2 ambient. The diffusion coefficient and thermal equilibrium concentration of... (Read more)
- 3000. Appl. Phys. Lett. 42, 690 (1983) , “Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon”, F. Morehead and N. A. Stolwijk, W. Meyberg, and U. GseleWe present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies. Applied... (Read more)
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