Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 1001. Phys. Rev. Lett. 92, 175504 (2004) , “Driving Force of Stacking-Fault Formation in SiC p–i–n Diodes”, S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. DasThe driving force of stacking-fault expansion in SiC pin diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)
- 1002. Phys. Rev. Lett. 92, 135502 (2004) , “Hydrogen Incorporation in Diamond: The Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. M. Martineau, S. Quinn, D. J. TwitchenWe report the identification of the vacancy-hydrogen complex in single crystal diamond synthesized by chemical vapor deposition. The S = 1 defect is observed by electron paramagnetic resonance in the negative charge state. The hydrogen atom is bonded to one of the carbon atoms neighboring the... (Read more)
- 1003. Phys. Rev. Lett. 92, 125504 (2004) , “Low Energy Electron Irradiation Induced Deep Level Defects in 6H–SiC: The Implication for the Microstructure of the Deep Levels E1/E2”, X. D. Chen, C. L. Yang, M. Gong, W. K. Ge, S. Fung, C. D. Beling, J. N. Wang, M. K. Lui, and C. C. LingN-type 6HSiC samples irradiated with electrons having energies of Ee = 0.2, 0.3, 0.5, and 1.7 were studied by deep level transient technique. No deep level was detected at below 0.2 MeV irradiation energy while for Ee0.3 MeV,... (Read more)
- 1004. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 1005. Phys. Rev. Lett. 92, 087601 (2004) , “Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films”, J. Suñé and E. Y. WuThe mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)
- 1006. Phys. Rev. Lett. 92, 047603 (2004) , “Probing the Wave Function of Shallow Li and Na Donors in ZnO Nanoparticles”, Serguei B. Orlinskii, Jan Schmidt, Pavel G. Baranov, Detlev M. Hofmann, Celso de Mello Donegá, and Andries MeijerinkElectron paramagnetic resonance and electron nuclear double resonance (ENDOR) experiments on ZnO nanoparticles reveal the presence of shallow donors related to interstitial Li and Na atoms. The shallow character of the wave function is evidenced by the multitude of 67Zn ENDOR lines and... (Read more)
- 1007. Phys. Rev. Lett. 92, 047602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, and Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 1008. Phys. Rev. Lett. 92, 017402 (2004) , “Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes”, S. J. Sque, R. Jones, J. P. Goss, and P. R. BriddonThe utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in... (Read more)
- 1009. Phys. Rev. Lett. 92, 015504 (2004) , “Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe role of mobile interstitial oxygen atoms (O0) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass. Superstoichiometric O0 was created by F2 laser photolysis of the... (Read more)
- 1010. Phys. Rev. Lett. 92, 015502 (2004) , “Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC”, J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. ChoykeWe report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4HSiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp3 carbon dangling bond center situated... (Read more)
- 1011. phys. stat. sol. (b) 241, 3242 (2004) , WILEY-VCH , “Influence of P-T pre-treatment on thermopower of Czochralski-grown silicon at high pressure”, V.V. Shchennikov, S.V. Ovsyannikov, A. Misiuk, V.V. Shchennikov JrFor the first time the thermoelectric power of high-pressure phases of Czochralski-grown silicon (Cz-Si) single crystals has been investigated. From the dependence on pressure of the thermopower the phase transitions in Si have been established. The influence of gas pressure (up to 1.5 GPa) and... (Read more)
- 1012. phys. stat. sol. (c) 1, 3110 (2004) , Wiley InterScience , “Raman spectra of lead chalcogenide single crystals”, S.V. Ovsyannikov, Y.S. Ponosov, V.V. Shchennikov, V.E. MogilenskikhRaman spectra of single crystals of lead chalcogenides (PbTe, PbSe, PbS) were studied at room temperature and ambient pressure. The structure of spectra for all compounds is rather similar showing the bands in one- and two-phonon range. Possible spectra identification is discussed. (© 2004... (Read more)
- 1013. Physica B 344, 190 (2004) , Elsevier , “Thermomagnetic and thermoelectric properties of semiconductors (PbTe, PbSe) at ultrahigh pressures”, S.V. Ovsyannikov, V.V. ShchennikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (LNE, TNE) effects and the Maggi–Reghi–Leduc (MRL) effect were measured on PbTe and PbSe micro-samples at ultrahigh pressures upto 20 GPa. Values of the mobility of charge carriers as well as the scattering parameter were estimated both for the low- and high-pressure phase of PbTe and PbSe. At about 3 GPa, the maxima of both Nernst–Ettingshausen effects and magnetoresistance (MR) (and hence of the mobility of charge carriers μ), attributed to the gapless state of PbTe and PbSe were established. The TNE effect was found to be the largest among the effects measured, while the MRL was hardly visible even at the highest mobility values of the charge carriers. The possibilities for using thermomagnetic effects in micro-device technologies are discussed. (Read more)
- 1014. Physica E 21, 928-932 (2004) , “Electron spin resonance and nuclear spin pumping in 2DEG quantum Hall system”, S. Teraoka , A. Numata , S. Amaha , K. Ono , S. TaruchaWe prepare a microwave electron spin resource (ESR) cavity for detecting a response from a 2DEG in an n-AlGaAs/GaAs. The response is obtained as a change in the longitudinal resistance (Δρxx) in v=3 quantum Hall region, particularly as a peak in Δρxx for resonance. We use the data of ESR to evaluate the g-factor and the lower bound for dephasing time. The resonance magnetic field suffers from nuclear spin effects via the hyperfine coupling, resulting in the ESR peak shift. We find the ESR peak shift or Overhauser shift decays with two time constants, suggesting the existence of two different origins for the relaxation. (Read more)
- 1015. Proc. SPIE 5359, 284 (2004) , “Intrinsic deep levels in semi-insulating silicon carbide”, William C. Mitchel, William D. Mitchell, Gerald LandisHigh temperature Hall effect and resistivity measurements have been made on undoped, high purity semi-insulating (HPSI) 4H SiC samples. Both physical vapor transport and high temperature chemical vapor deposition grown samples have been investigated. Resistivity measurements before and after... (Read more)
- 1016. Rev. Sci. Instrum. 75, 4781 (2004) , “W-band Fabry–Pérot microwave reasonators for optical detected electron paramagnetic resonance and electron nuclear double resonance of paramagnetic defects in solids”, I. Tkach, U. Rogulis, S. Greulich-Weber, and J.-M. SpaethThe designs of W-band (~95 GHz) FabryPérot microwave resonators for optically detected electron paramagnetic resonance (ODEPR) and electron nuclear double resonance (ODENDOR) as well as the ODEPR/ODENDOR spectrometer are described. The FabryPérot resonator was... (Read more)
- 1017. Rev. Sci. Instrum. 75, 4781 (2004) , “W-band Fabry–Pérot microwave reasonators for optical detected electron paramagnetic resonance and electron nuclear double resonance of paramagnetic defects in solids”, I. Tkach, U. Rogulis, S. Greulich-Weber, and J.-M. SpaethThe designs of W-band (~95 GHz) FabryPérot microwave resonators for optically detected electron paramagnetic resonance (ODEPR) and electron nuclear double resonance (ODENDOR) as well as the ODEPR/ODENDOR spectrometer are described. The FabryPérot resonator was... (Read more)
- 1018. Semiconductors 38, 745 (2004) , “Promotion of metallurgical reactions at the Ni-SiC interface by irradiation with protons”, V. V. Kozlovski, P. A. Ivanov, D. S. Rumyantsev, V. N. Lomasov, T. P. SamsonovaIt is shown that irradiation of Ni-SiC structures with protons at elevated temperatures promotes metallurgical reactions at the Ni-SiC interface owing to a diffusion mechanism stimulated by the generation of radiation defects. The most pronounced effect of mixing at the metal-semiconductor interface is observed if the thickness of the metal film is equal to the projected range of protons. (Read more)
- 1019. Semiconductors 38, 31-35 (2004) , “Green Luminescence Band of Zinc Oxide Films Copper-Doped by Thermal Diffusion”, Ya. I. Alivov, M. V. Chukichev, V. A. NikitenkoHigh quality ZnO single-crystal films were doped with copper by thermal diffusion, and their luminescent properties were studied by cathodoluminescence spectroscopy. Doping with copper increases the intensity of the green-emission band of the cathodoluminescence spectrum, whose peak, width, and shape at 78 and 300 K remain unchanged. At 4.2 K, a pronounced phonon structure with a phonon energy of 72 meV is detected in the cathodoluminescence green-emission band of the doped samples. In this case, the phonon peaks feature a triplet fine structure instead of the doublet one generally observed. This feature is attributed to radiative recombination of acceptor excitons that are localized at copper atoms and interact with each one of the subbands of the ZnO valence band. An analysis of the experimental data on the film cathodoluminescence and comparative studies of luminescence and electron spin resonance in single crystals allow one to conclude that the uncontrollable copper impurity typically existing in ZnO is responsible for green-emission luminescence in this material. (Read more)
- 1020. Semiconductors 38, 125 (2004) , “Radiation Resistance of SiC and Nuclear-Radiation Detectors Based on SiC Films”, A. A. Lebedev, A. M. Ivanov, N. B. StrokanA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 1021. Semiconductors 38, 1187 (2004) , “Optical and electrical properties of 4H-SiC irradiated with fast neutrons and high-energy heavy ions”, E. V. Kalinina, G. F. Kholuyanov, G. A. Onushkin, D. V. Davydov, A. M. Strelchuk, A. O. Konstantinov, A. Halln, A. Yu. Nikiforov, V. A. Skuratov, K. HavancsakPhotoluminescence and deep-level transient spectroscopy are used to study the effect of irradiation with fast neutrons and high-energy Kr (235 MeV) and Bi (710 MeV) ions on the optical and electrical properties of high-resistivity high-purity n-type 4H-SiC epitaxial layers grown by chemical vapor deposition. Electrical characteristics were studied using the barrier structures based on these epitaxial layers: Schottky barriers with Al and Cr contacts and p +-n-n+ diodes fabricated by Al ion implantation. According to the experimental data obtained, neutrons and high-energy ions give rise to the same defect-related centers. The results show that, even for the extremely high ionization density (34 keV/nm) characteristic of Bi ions, the formation of the defect structure in SiC single crystals is governed by energy losses of particles due to elastic collisions. (Read more)
- 1022. Semiconductors 38, 1176 (2004) , “Formation and study of buried SiC layers with a high content of radiation defects”, E. V. Bogdanova, V. V. Kozlovski, D. S. Rumyantsev, A. A. Volkova, A. A. LebedevProtons with energy E=100 keV were implanted with doses ranging from 2×1017 to 4×1017 cm-2 into 6H-and 4H-SiC n-type samples at room temperature. The samples were subjected to various types of postimplantation heat treatment in the temperature range 550–1500°C. The parameters of the samples were studied by measuring the capacitance-voltage and current-voltage characteristics and by analyzing the photoluminescence spectra. Blistering on the surface of the sample is observed after annealing the samples at a temperature of 800°C only after implantation of protons with a dose of ≤3×1017 cm-2. A decrease in the resistivity of the compensated layer sets in after annealing at a temperature of ∼1200°C and is completed after annealing at a temperature of ∼1500°C. A drastic decrease in the photoluminescence intensity is observed after implantation for all types of samples. Recovery of the photoluminescence intensity sets in after annealing at temperatures ≥800°C and is complete after annealing at a temperature of 1500°C. (Read more)
- 1023. Solid State Commun. 132, 545 (2004) , Pergamon Press , “Pressure-induced phase transitions in Si observed by thermoelectric power measurements”, S.V. Ovsyannikov, V.V. Shchennikov, A. Misiuk, V.V. Shchennikov JrFor the first time the phase transitions under high pressure P up to 20 GPa have been observed in Czochralski-grown Si single crystals by thermoelectric power S measurements. Values of S≈+8±3 μV/K have been determined for tetragonal, orthorhombic and simple hexagonal high-pressure phases. The behaviour of S(P) was found to be rather different for different Si samples—initial and pre-treated by high temperatures 450–650ºC under hydrostatic pressure 0–1.5 GPa. (Read more)
- 1024. Solid State Commun. 132, 333 (2004) , Pergamon Press , “Phase transitions investigation in ZnTe by thermoelectric power measurements at high pressure”, S.V. Ovsyannikov, V.V. ShchennikovThe pressure-induced phase transitions were studied in ZnTe by the thermoelectric power (S) technique. For the high-pressure trigonal phase P3121 cinnabar the large thermopower values S≈+400 correspond to semiconductor hole conductivity. During a transition into the orthorhombic structure Cmcm the value of S dropped by 40–50 times indicating metallic hole conductivity, like in the high pressure phases of other chalcogenides of II Group (HgSe, HgTe, CdTe) with Cmcm structure. In a transient region between the trigonal and orthorhombic phase (especially under decreasing pressure) a novel phase has been observed with a negative value of S. By analogy with other Zn and Cd chalcogenides whose NaCl phases have an electron type of conductivity the phase observed may have a NaCl structure. (Read more)
- 1025. Appl. Phys. Lett. 83, 934-936 (2003) , “Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique”, Lin Shao, Xuemei Wang, Irene Rusakova, Hui Chen, and Jiarui LiuTrapping of migrating Si interstitials at substrate/epitaxial interfaces during high-energy Si ion bombardment has been observed. It shows that the interface of Si/Si layer, grown by molecular-beam epitaxy, is a strong sink for self-interstitials during MeV bombardment at room temperature. We... (Read more)
- 1026. Appl. Phys. Lett. 83, 923-925 (2003) , “Interstitial H and H2 in SiC”, M. KaukonenThe properties of hydrogen in 3C and 4H type silicon carbide (SiC) are studied theoretically at the density functional level. We find that only singly positive or negative charge states of hydrogen are thermodynamically stable in SiC. The transition from the positive to the negative charge state... (Read more)
- 1027. Appl. Phys. Lett. 83, 905-907 (2003) , “Investigation of boron diffusion in 6H-SiC”, Y. Gaop-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by erfc... (Read more)
- 1028. Appl. Phys. Lett. 83, 665-667 (2003) , “Formation of BiOi, BiCs, and BiBsHi defects in e-irradiated or ion-implanted silicon containing boron”, J. Adey and R. JonesThe local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments... (Read more)
- 1029. Appl. Phys. Lett. 83, 5407-5409 (2003) , “Clusters formation in ultralow-energy high-dose boron-implanted silicon”, F. Cristiano, X. Hebras, N. Cherkashin, and A. ClaverieThe formation and evolution of small cluster defects in 500 eV, 1×1015 cm2 boron-implanted silicon is investigated. These clusters are identified by high-resolution transmission electron microscopy (TEM) as small dislocation loops lying on {100} planes with an... (Read more)
- 1030. Appl. Phys. Lett. 83, 4981-4983 (2003) , “Decrease in Al acceptor density in Al-doped 4H-SiC by irradiation with 4.6 MeV electrons”, Hideharu Matsuura, Koichi Aso, Sou Kagamihara, Hirofumi Iwata, and Takuya IshidaFrom the temperature dependence of the hole concentration p(T) in a lightly Al-doped 4H-SiC epilayer, an Al acceptor with ~200 meV and an unknown defect with ~370 meV are found. By irradiation with 4.6 MeV electrons, the Al acceptor density is reduced, while the unknown defect density... (Read more)
- 1031. Appl. Phys. Lett. 83, 4957-4959 (2003) , “Core structure and properties of partial dislocations in silicon carbide p-i-n diodes”, S. Ha, M. Benamara, and M. SkowronskiThe electroluminescence, mobility, and core nature of partial dislocations bounding stacking faults in 4H silicon carbide p-i-n diodes were investigated using optical emission microscopy and transmission electron microscopy (TEM). The stacking faults developed and expanded in... (Read more)
- 1032. Appl. Phys. Lett. 83, 458-460 (2003) , “Irradiation-induced recovery of disorder in gallium nitride”, W. Jiang and W. J. WeberGallium nitride has been irradiated to two fluences with energetic Au2+ ions at 300 K. Two different damage levels and depth profiles were produced that are characterized by near-surface damage accumulation and deeper-regime damage saturation. Thermal annealing at 873 K resulted in... (Read more)
- 1033. Appl. Phys. Lett. 83, 45-47 (2003) , “Visible luminescence of porous amorphous Si1–xCx:H due to selective dissolution of silicon”, K. RerbalRoom-temperature photoluminescence of porous hydrogenated amorphous silicon-carbon alloys (a-Si1xCx:H) has been studied for different carbon concentrations. Porous a-Si1xCx:H luminesces at energies much... (Read more)
- 1034. Appl. Phys. Lett. 83, 437-439 (2003) , “Negative-U property of the oxygen vacancy defect in SiO2 and its implication for the E1[prime]" align="middle"> center in α-quartz”, D. J. ChadiThe +1 charged state of an oxygen vacancy V(O)+ in α-quartz is found to be unstable with respect to the reaction 2V(O)+V(O)0 + V(O)2+, which lowers the total energy by 2.9 eV, making it highly unlikely that... (Read more)
- 1035. Appl. Phys. Lett. 83, 4354-4356 (2003) , “Native hole traps of ferromagnetic Ga1–xMnxAs layers on (100) GaAs substrates”, I. T. Yoon, C. J. Park, H. Y. Cho, and T. W. KangDominant hole traps of ferromagnetic Ga1xMnxAs and epilayers with an Mn mole fraction of x2.2% and 4.4% were identified employing deep-level transient spectroscopy. Three hole traps with binding energies of EA = 0.38±0.01 eV at... (Read more)
- 1036. Appl. Phys. Lett. 83, 4333-4335 (2003) , “Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy”, F. Albrecht, G. Pasold, J. Grillenberger, N. Achtziger, and W. WitthuhnA deep energy level of bromine in the bandgap of GaAs was determined by means of Radiotracer deep-level transient spectroscopy (DLTS) measurements. For this purpose, the radioactive isotope 77Br was implanted in p-type as well as in n-type GaAs. In the course of repeated... (Read more)
- 1037. Appl. Phys. Lett. 83, 4324-4326 (2003) , “Thermal stability of internal gettering of iron in silicon and its impact on optimization of gettering”, Peng Zhang, Hele Väinölä, Andrei A. Istratov, and Eicke R. WeberThe redissolution behavior of gettered iron was studied in p-type Czochralski-grown silicon with a doping level of 2.5×1014 cm3 and an oxide precipitate density of 5×109 cm3. The concentrations of interstitial iron and... (Read more)
- 1038. Appl. Phys. Lett. 83, 4193-4195 (2003) , “Intrinsic compensation of silicon-doped AlGaN”, M. C. WagenerThe silicon doping characteristics of AlxGa1xN were investigated over the x = 0.20.5 composition range. A combination of Hall and capacitancevoltage measurements indicated a significant deepening of the Si level, as well as a systematic... (Read more)
- 1039. Appl. Phys. Lett. 83, 4169-4171 (2003) , “Influence of substitutional carbon incorporation on implanted-indium-related defects and transient enhanced diffusion”, Chung Foong Tan and Eng Fong ChorIt has been demonstrated that, by incorporating a thin ~20 nm Si1yCy (with y as low as 0.1%) layer at the deep indium implant end-of-range (EOR) region, the EOR defects and enhanced diffusion behavior associated with indium implant can be eliminated.... (Read more)
- 1040. Appl. Phys. Lett. 83, 3710-3712 (2003) , “Metastability of two-hydrogen complexes in silicon”, D. J. ChadiA two-hydrogen interstitial complex (H2**" align="middle">) in crystalline Si that exhibits metastability is proposed via first-principles total energy calculations. In its most stable state, H2**" align="middle"> is 0.28 eV/H higher in energy than... (Read more)
- 1041. Appl. Phys. Lett. 83, 3525-3527 (2003) , “On the nitrogen vacancy in GaN”, D. C. LookThe dominant electrically active defect produced by 0.42 MeV electron irradiation in GaN is a 70 meV donor. Since only N-sublattice displacements can be produced at this energy, and since theory predicts that the N interstitial is a deep acceptor in n-type GaN, we argue that the 70 meV donor... (Read more)
- 1042. Appl. Phys. Lett. 83, 3522-3524 (2003) , “Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe”, A. Janotti, Su-Huai Wei, and S. B. ZhangIn the past, codoping by mixing donors with acceptors has been proposed to lower the dopant ionization energy. However, the level repulsion between donor and acceptor states is weak due to symmetry considerations. Here, we propose an innovative approach to lower the donor ionization energy by... (Read more)
- 1043. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 1044. Appl. Phys. Lett. 83, 3293-3295 (2003) , “Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN”, O. Gelhausen, H. N. Klein, and M. R. PhillipsThe effect of low-energy electron-beam irradiation (LEEBI) on native defects and residual impurities in metalorganic-vapor-phase-epitaxy-grown, lightly Mg-doped, p-type GaN was studied by temperature-resolved and excitation power density-resolved cathodoluminescence spectroscopy. Following... (Read more)
- 1045. Appl. Phys. Lett. 83, 3051-3053 (2003) , “Electronic structure of acceptor-donor complexes in silicon”, E. Atoro, Y. Ohama, and Y. HayafujiThe electronic structure of trimer acceptor-donor complexes in silicon Si clusters is studied using the ab initio discrete variational-Xα molecular-orbital (MO) method. The trimer complexes In2D (D = phosphorus P, arsenic As, antimony Sb, or bismuth Bi) consist of two... (Read more)
- 1046. Appl. Phys. Lett. 83, 3042-3044 (2003) , “Role of boron for defect evolution in hydrogen-implanted silicon”, J. K. Lee, T. Höchbauer, R. D. Averitt, and M. NastasiThe mechanism underlying the exfoliation phenomenon in B+H coimplanted Si is presented. Compared with only H implantation, H-implanted Si samples that received a B preimplant were observed to have a decrease in implantation-induced lattice damage, in spite of enhanced blistering behavior, which was... (Read more)
- 1047. Appl. Phys. Lett. 83, 287-289 (2003) , “Electrical activity of nitrogen acceptors in ZnO films grown by metalorganic vapor phase epitaxy”, J. F. Rommeluère, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. MarfaingThe electrical activity of nitrogen as an acceptor in ZnO has been investigated in two ways. First, nitrogen was introduced by means of diallylamine during metalorganic vapor phase epitaxy (MOVPE) yielding incorporation of nitrogen in the range 10161021 ... (Read more)
- 1048. Appl. Phys. Lett. 83, 2835-2837 (2003) , “Detection of oxygen vacancy defect states in capacitors with ultrathin Ta2O5 films by zero-bias thermally stimulated current spectroscopy”, W. S. LauDefect state D (0.8 eV) was experimentally detected in Ta2O5 capacitors with ultrathin (physical thickness <10 nm) Ta2O5 films using zero-bias thermally stimulated current spectroscopy and correlated with leakage current. Defect state D can be more... (Read more)
- 1049. Appl. Phys. Lett. 83, 2007-2009 (2003) , “Doping of chalcopyrites by hydrogen”, Çetin Klç and Alex ZungerFirst-principles total-energy calculations for hydrogen impurities in CuInSe2 (CIS) and CuGaSe2 (CGS) show that H+ takes up the CuSe bond center position, whereas H0 and H take up tetrahedral interstitial site next to In (in CIS) or... (Read more)
- 1050. Appl. Phys. Lett. 83, 1947-1949 (2003) , “Blue photoluminescence of α-Ga2S3 and α-Ga2S3:Fe2+ single crystals”, Chang-Sun Yoonα-Ga2S3 and α-Ga2S3:Fe2+ single crystals were grown by the two-zone sublimation method. The optical energy gaps of α-Ga2S3 and α-Ga2S3:Fe2+ at 10 K were found to be... (Read more)
- 1051. Appl. Phys. Lett. 83, 1647 (2003) , “Dynamic recovery of negative bias temperature instability in p-type metal–oxide–semiconductor field-effect transistors”,An unexpected physical phenomenondynamic recovery of negative bias temperature instability (NBTI)is reported. NBTI degradation in p-type metaloxidesemiconductor field-effect transistors is significantly (by ~40%) reduced after stress interruption. NBTI recovery... (Read more)
- 1052. Appl. Phys. Lett. 83, 1385-1387 (2003) , “Hydrogen passivation of nitrogen in SiC”, A. Gali and P. DeákFirst-principles calculations carried out in 4H-SiC show that hydrogen may form stable complexes with substitutional nitrogen, passivating the shallow nitrogen donor. The complex is very stable with respect to isolated positive donors and negatively charged hydrogen interstitials, so reactivation is... (Read more)
- 1053. Appl. Phys. Lett. 83, 1325-1327 (2003) , “Aggregate nitrogen in synthetic diamond”, Karen M. McNamaraNitrogen is a commonly observed impurity in natural and synthetic diamond, yet there are still many questions in regard to its incorporation in the material. In all three common forms of diamond: natural, high-pressure high-temperature synthetic, and chemical vapor deposition (CVD) diamond; nitrogen... (Read more)
- 1054. Appl. Phys. Lett. 82, 592-594 (2003) , “Shallow donor state of hydrogen in indium nitride”, E. A. DavisThe nature of the electron states associated with hydrogen in InN has been inferred by studying the behavior of positive muons, which mimic protons when implanted into semiconductors. The muons capture electrons below 60 K, forming paramagnetic centers with a binding energy of about 12 meV. Together... (Read more)
- 1055. Appl. Phys. Lett. 82, 568-570 (2003) , “Mechanisms responsible for improvement of 4H–SiC/SiO2 interface properties by nitridation”, V. V. Afanas'ev and A. StesmansAn analysis of fast and slow traps at the interface of 4HSiC with oxides grown in O2, N2O, and NO reveals that the dominant positive effect of nitridation is due to a significant reduction of the slow electron trap density. These traps are likely to be related to defects... (Read more)
- 1056. Appl. Phys. Lett. 82, 565-567 (2003) , “Photoconductivity and spin-dependent photoconductivity of hydrosilylated (111) silicon surfaces”, A. Lehner, F. Kohl, S. A. Franzke, T. Graf, M. S. Brandt, and M. StutzmannOrganic monolayers were prepared on hydrogen-terminated (111) silicon surfaces by thermally induced hydrosilylation with alkenes. The electronic properties of the modified surfaces were studied by photoconductivity and spin-dependent photoconductivity measurements (electrically detected magnetic... (Read more)
- 1057. Appl. Phys. Lett. 82, 532-534 (2003) , “Correlation between the photoluminescence lifetime and defect density in bulk and epitaxial ZnO”, T. Koida, S. F. Chichibu, and A. UedonoInfluences of point defects on the nonradiative processes in ZnO were studied using steady-state and time-resolved photoluminescence (PL) spectroscopy making a connection with the results of positron annihilation measurement. Free excitonic PL intensity naturally increased with the increase in the... (Read more)
- 1058. Appl. Phys. Lett. 82, 4157-4159 (2003) , “Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors”, H. D. Shih, M. A. Kinch, F. Aqariden, P. K. Liao, and H. F. SchaakeGold-doped Hg1xCdxTe samples of x = 0.2067 (in the very-long-wavelength infrared spectral band, with cutoff wavelengths ~13.2 µm at 77 K) were prepared by tellurium-melt liquid-phase epitaxy. The samples were doped with indium to... (Read more)
- 1059. Appl. Phys. Lett. 82, 4074-4076 (2003) , “Si dangling-bond-type defects at the interface of (100)Si with ultrathin HfO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance analysis of (100)Si/HfO2 interfaces prepared by chemical vapor deposition of the oxide using three chemically different precursors reveals that the trivalent Si defects common for Si/SiO2 interfacesPb0 and Pb1... (Read more)
- 1060. Appl. Phys. Lett. 82, 40-42 (2003) , “Observation of defect complexes containing Ga vacancies in GaAsN”, J. Toivonen, T. Hakkarainen, M. Sopanen, and H. LipsanenPositron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers were found to contain Ga vacancies in defect complexes. The density of the vacancy complexes increases rapidly to the order of 1018 cm3 with increasing N composition and decreases... (Read more)
- 1061. Appl. Phys. Lett. 82, 3865-3867 (2003) , “Electrically active defects in silicon produced by ion channeling”, H. Kortegaard NielsenLow-dose implantations with 65 Si and 150 keV Ge ions into the n+ top layer of Si n+p diodes have been carried out. The defects produced in deeper-lying layers were studied by deep level transient spectroscopy. Results were compared to crystal-TRIM... (Read more)
- 1062. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 1063. Appl. Phys. Lett. 82, 3671-3673 (2003) , “Deep level defect in Si-implanted GaN n+-p junction”, X. D. Chen, Y. Huang, S. Fung, C. D. Beling, and C. C. LingA deep level transient spectroscopy (DLTS) study has been performed on a GaN n+-p junction fabricated by implanting Si into a Mg-doped p-type GaN epilayer. A high concentration of a deep level defect has been revealed within the interfacial region of the junctions by... (Read more)
- 1064. Appl. Phys. Lett. 82, 3469-3471 (2003) , “Fluorine-enhanced boron diffusion in amorphous silicon”, J. M. Jacques, L. S. Robertson, and K. S. JonesSilicon wafers were preamorphized with 70 keV Si+ at a dose of 1×1015 atoms/cm2, generating a deep amorphous layer of 1800 Å. Implants of 500 eV 11B+, with and without 6 keV F+, followed at doses of 1×1015... (Read more)
- 1065. Appl. Phys. Lett. 82, 3457-3459 (2003) , “Contributions from gallium vacancies and carbon-related defects to the "yellow luminescence" in GaN”, R. Armitage, William Hong, Qing Yang, H. Feick, J. Gebauer, and E. R. WeberCarbon-doped GaN layers grown by molecular-beam epitaxy are studied with photoluminescence and positron annihilation spectroscopy. Semi-insulating layers doped with >1018 cm3 carbon show a strong luminescence band centered at ~2.2 eV (yellow luminescence). The... (Read more)
- 1066. Appl. Phys. Lett. 82, 3448-3450 (2003) , “Optical properties of the isoelectronic trap Hg in ZnO”, Th. Agne, M. Dietrich, J. Hamann, S. Lany, H. Wolf, and Th. WichertNominally undoped ZnO crystals were doped with Hg by implanting radioactive 197Hg/197Au atoms. After annealing at 1073 K, the photoluminescence (PL) spectra recorded at 1.6 K exhibit a Hg related band in the region between 3.28 and 2.85 eV. The sharp no-phonon line, which is... (Read more)
- 1067. Appl. Phys. Lett. 82, 3433-3435 (2003) , “Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy”, J. Oila, J. Kivioja, V. Ranki, and K. SaarinenPositron annihilation measurements show that negative Ga vacancies are the dominant acceptors in n-type gallium nitride grown by hydride vapor phase epitaxy. The concentration of Ga vacancies decreases, from more than 1019 to below 1016 cm3, as the... (Read more)
- 1068. Appl. Phys. Lett. 82, 3260-3262 (2003) , “Optically induced formation of the hydrogen complex responsible for the 4B0 luminescence in 4H-SiC”, Yaroslav KoshkaFormation of a boron-related defect responsible for the 4B0 emission line in the low-temperature photoluminescence spectrum of 4H SiC has been investigated. The 4B0 luminescence was absent in as-grown epitaxial layers. This line appeared after hydrogenation along with other... (Read more)
- 1069. Appl. Phys. Lett. 82, 3002-3004 (2003) , “Observation of a hydrogenic donor in the luminescence of electron-irradiated GaN”, Qing Yang, Henning Feick, and Eicke R. WeberExcitonic luminescence of GaN after irradiation with 0.42-MeV electrons has been investigated in detail. The low-energy irradiation generates damage exclusively in the N sublattice. Additional bound-exciton lines are found and are shown to arise from a hydrogenic donor with a binding energy... (Read more)
- 1070. Appl. Phys. Lett. 82, 2987-2989 (2003) , “Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon”, D. H. Macdonald, H. Maeckel, S. Doshi, W. Brendle, and A. CuevasCarrier lifetime measurements have been used to characterize residual defects after low-energy implanting of silicon ions followed by high-temperature annealing (900 or 1000 °C). The implant was found to result in two distinct regions of lifetime-reducing damage. First, a high recombination... (Read more)
- 1071. Appl. Phys. Lett. 82, 296-298 (2003) , “Damage coefficient in high-temperature particle- and γ-irradiated silicon p–i–n diodes”, H. Ohyama, K. Takakura, and K. HayamaThe impact of high-temperature neutron, electron, and γ-irradiations on the dark current of silicon pin junctions is described in terms of a damage coefficient KI. It is shown that this KI is thermally activated and reduces... (Read more)
- 1072. Appl. Phys. Lett. 82, 2835-2837 (2003) , “Invasive nature of corona charging on thermal Si/SiO2 structures with nanometer-thick oxides revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals that the versatile noncontacting corona biasing method frequently applied in the electrical analysis of Si/SiO2-based structures is not a noninvasive tool, as usually assumed. In the absence of carrier impact damage, at least five types of... (Read more)
- 1073. Appl. Phys. Lett. 82, 269 (2003) , “Relationship between interfacial nitrogen concentration and activation energies of fixed-charge trapping and interface state generation under bias-temperature stress condition”,The influence of nitrogen concentration at a nitrided oxide/silicon interface on the activation energies of both near-interface fixed-charge trapping and interface state generation caused by negative bias temperature instability stress has been studied quantitatively. It is observed that the charge... (Read more)
- 1074. Appl. Phys. Lett. 82, 2652-2654 (2003) , “Vacancy–oxygen complex in Si1–xGex crystals”, V. P. Markevich and A. R. PeakerElectronic properties of the vacancyoxygen complex in unstrained Si1xGex crystals (0<x0.055) grown by the Czochralski method were studied by means of capacitance transient techniques. The enthalpy of electron ionization for the single... (Read more)
- 1075. Appl. Phys. Lett. 82, 2263-2265 (2003) , “Decoration effects as origin of dislocation-related charges in gallium nitride layers investigated by scanning surface potential microscopy”, A. Krtschil, A. Dadgar, and A. KrostThe electrical charge state of threading dislocations in differently doped GaN is investigated by scanning surface potential microscopy in conjunction with tapping mode atomic force microscopy. The dislocations are found to be either negatively charged or neutral depending on the type of doping... (Read more)
- 1076. Appl. Phys. Lett. 82, 2254-2256 (2003) , “Phosphorus and boron diffusion in silicon under equilibrium conditions”, J. S. Christensen and H. H. RadamsonThe intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 °C) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74±0.07 eV and a... (Read more)
- 1077. Appl. Phys. Lett. 82, 2169-2171 (2003) , “Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"”, I. PintilieRadiation-induced defects in silicon diodes were investigated after exposure to high doses of Co60-gamma irradiation using the thermally stimulated current method. We have found that, for high irradiation doses, a second-order defect can be detected. This defect is largely suppressed in... (Read more)
- 1078. Appl. Phys. Lett. 82, 2094-2096 (2003) , “Comparison of oxygen-chain models for late thermal double donors in silicon”, Y. J. Lee, J. von Boehm, M. Pesola, and R. M. NieminenThe electronic and atomic structures of the oxygen chains assigned to late thermal double donors (TDDs) in silicon are studied using accurate total-energy calculations. We find that the ring-type O-chain model is best suited for TDDs and better than the di-Y-lid-type O-chain model. The ring-type O... (Read more)
- 1079. Appl. Phys. Lett. 82, 2082-2084 (2003) , “Effect of Be+ + O+ coimplantation on Be acceptors in GaN”, Yoshitaka Nakano and Tetsu KachiP-type regions were produced in undoped GaN films by Be+ and Be+ + O+ implantation and subsequent annealing at temperatures between 1000 and 1050 °C. From thermal admittance spectroscopic measurements, the activation energy of the Be acceptor level was... (Read more)
- 1080. Appl. Phys. Lett. 82, 2074-2076 (2003) , “Cathodoluminescence and Hall-effect measurements in sulfur-doped chemical-vapor-deposited diamond”, Kazushi Nakazawa, Minoru Tachiki, and Hiroshi KawaradaDominant n-type conductivity in sulfur-doped chemical-vapor-deposited diamond is observed by Hall-effect measurement. The activation energy is estimated at 0.50.75 eV above 600 K. Below 600 K, the carrier concentration deviates from the activation energy, and Hall mobility decreases in... (Read more)
- 1081. Appl. Phys. Lett. 82, 2059-2061 (2003) , “Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy”, J. Gebauer and E. R. WeberWe identified the charge carrier compensation mechanism in Te-doped GaAs with atomically resolved scanning tunneling microscopy. Three types of defects were found: tellurium donors (TeAs), Ga vacancies (VGa), and Ga vacancydonor complexes... (Read more)
- 1082. Appl. Phys. Lett. 82, 2020-2022 (2003) , “Observation of interface defects in thermally oxidized SiC using positron annihilation”, James Dekker and Kimmo SaarinenPositron annihilation has been applied to study thermally oxidized 4H- and 6H-SiC. The SiC/SiO2 interface is found to contain a high density of open-volume defects. The positron trapping at the interface defects correlates with the charge of the interface determined by... (Read more)
- 1083. Appl. Phys. Lett. 82, 1556-1558 (2003) , “Identification of implantation-induced defects in GaN: A near-edge x-ray absorption fine structure study”, M. Katsikini, F. Pinakidou, and E. C. PalouraWe apply near-edge x-ray absorption fine structure spectroscopy, at the N K edge, in order to identify the signature of implantation-induced defects in the partial density of empty states in GaN implanted with O, Mg, and Si ions. The dose range was 10141018... (Read more)
- 1084. Appl. Phys. Lett. 82, 1066-1068 (2003) , “Investigation of interface trap states in TiN/Al2O3/p-Si capacitor by deep level transient spectroscopy”, In Sang Jeon, Jaehoo Park, Dail Eom, Cheol Seong Hwang, and Hyeong Joon KimThe minority carrier (electron) capture process and the interface trap density of a TiN/Al2O3/p-Si metaloxidesemiconductor capacitor were examined by deep level transient spectroscopy (DLTS). It was found that the activation energies of the large peaks... (Read more)
- 1085. Appl. Phys. Lett. 82, 1021-1023 (2003) , “Ga vacancies and grain boundaries in GaN”, J. Oila and K. SaarinenWe have applied a low-energy positron beam to study epitaxial Si-doped GaN layers, where the grain size varies from 0.2 to 25 µm. Negatively charged Ga vacancies are found in n-type samples. Their concentration is independent of the grain size, suggesting that Ga vacancies exist... (Read more)
- 1086. J. Appl. Phys. 94, 7567 (2003) , “Electron paramagnetic resonance of Cr2+ and Cr4+ ions in CdGeAs2 crystals”, N. Y. Garces, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate chromium ions in single crystals of CdGeAs2 grown by the horizontal gradient freeze technique. Signals from Cr2+ and Cr4+ ions were observed near 12 K. The Cr2+ ions have the... (Read more)
- 1087. J. Appl. Phys. 94, 7470 (2003) , “Defect assessment of Mg-doped GaN by beam injection techniques”, C. Díaz-Guerra and J. PiquerasThe electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous... (Read more)
- 1088. J. Appl. Phys. 94, 7112 (2003) , “Dynamic annealing in ion implanted SiC: Flux versus temperature dependence”, A. Yu. KuznetsovA strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes... (Read more)
- 1089. J. Appl. Phys. 94, 7105-7111 (2003) , “Electrically detected magnetic resonance of ion-implantation damage centers in silicon large-scale integrated circuits”, T. Umeda, Y. Mochizuki, K. Okonogi, K. HamadaWe used electrically detected magnetic resonance to study the microscopic structure of ion-implantation-induced point defects that remained in large-scale Si integrated circuits (Si LSIs). Two types of defects were detected in the source/drain (n+-type) region of... (Read more)
- 1090. J. Appl. Phys. 94, 6456 (2003) , “Production and thermal decay of radiation-induced point defects in KD2PO4 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonOptical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD2PO4 grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x... (Read more)
- 1091. J. Appl. Phys. 94, 5617 (2003) , “Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation”, M. D. Chun, D. Kim, and J. Y. HuhA comparative study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) Si wafers, which differed mainly in interstitial oxygen concentration, upon 3 MeV proton irradiation with fluences of up to 2×1015... (Read more)
- 1092. J. Appl. Phys. 94, 5399 (2003) , “Optical properties of GaSe grown with an excess and a lack of Ga atoms”, S. ShigetomiMeasurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is... (Read more)
- 1093. J. Appl. Phys. 94, 5297 (2003) , “Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors”, A. CavalliniThe features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor... (Read more)
- 1094. J. Appl. Phys. 94, 519-524 (2003) , “Molecular nitrogen (N2-" align="middle">) acceptors and isolated nitrogen (N–) acceptors in ZnO crystals”, N. Y. Garces, Lijun Wang, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. EasonElectron paramagnetic resonance (EPR) has been used to investigate molecular nitrogen and isolated nitrogen acceptors in single crystals of ZnO. These samples were grown by the seeded chemical vapor transport method with N2 added to the gas stream. A five-line EPR spectrum is observed at... (Read more)
- 1095. J. Appl. Phys. 94, 4807 (2003) , “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements”, Z. Q. Chen, S. Yamamoto, M. Maekawa, and A. KawasusoDefects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related... (Read more)
- 1096. J. Appl. Phys. 94, 4363 (2003) , “Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon”, C. A. Londos and M. S. PotsidiCzochralski-grown silicon samples subjected to high temperaturehigh pressure (HTHP) treatments in the range of 900 °C were irradiated with fast neutrons. Transmission electron microscopy measurements revealed the presence of oxygen precipitates (SiOx) and dislocation... (Read more)
- 1097. J. Appl. Phys. 94, 400 (2003) , “Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 1017 cm3... (Read more)
- 1098. J. Appl. Phys. 94, 3960 (2003) , “Hydrogen plasma passivation effects on properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen on the electrical and optical properties of p-GaN were investigated. Hydrogen is readily incorporated into the material at temperatures of 250350 °C, which is consistent with the low activation energy for diffusion reported by Seager et al. [J. Appl. Phys.... (Read more)
- 1099. J. Appl. Phys. 94, 3923 (2003) , “Electrically active sulfur-defect complexes in sulfur implanted diamond”, R. Kalish and C. Uzan-SaguySingle crystal type IIa 100 diamonds were implanted with sulfur, phosphorus, and argon ions under different implantation and annealing conditions. Shallow (sub-MeV) as well as deep (MeV) implantations into samples held at low (liquid nitrogen) ambient (room temperature) and high (400 °C)... (Read more)
- 1100. J. Appl. Phys. 94, 3796 (2003) , “Electron paramagnetic resonance characterization of impurity Gd3+ ions in a PbWO4 single crystal”, T. H. Yeom and S. H. LeeLead tungstate single crystals doped with Gd2O3 were grown by the Czochralski method in Ar atmosphere. The electron paramagnetic resonance of the Gd3+ ion in a PbWO4 single crystal has been investigated at 9.4 GHz. The spectroscopic splitting tensor... (Read more)
- 1101. J. Appl. Phys. 94, 3233 (2003) , “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”, Y. Nakakura, M. Kato, M. Ichimura, and E. AraiAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three... (Read more)
- 1102. J. Appl. Phys. 94, 3115 (2003) , American Institute of Physics , “Characteristics of deep levels associated with rhodium impurity in n-type GaAs”, M. Zafar Iqbal, A. Majid, Shah Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg.,Deep levels have been characterized in n-type GaAs crystalline films grown by metalorganic chemical vapor deposition, doped in situ with 4d transition metal, rhodium, using the deep level transient spectroscopy (DLTS) technique. Two prominent broad bands of deep levels are found... (Read more)
- 1103. J. Appl. Phys. 94, 3075 (2003) , “Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing”, Minoru Nakamura and Susumu MurakamiEvolution of intrinsic defects (interstitials or vacancies) formed by implanting with protons and copper ions in silicon crystals and then annealing the crystals at temperatures from 100 to 800 °C was investigated by photoluminescence (PL) measurements. For samples annealed below 400 °C,... (Read more)
- 1104. J. Appl. Phys. 94, 3069 (2003) , “Proton implantation effects on electrical and luminescent properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 1012 cm2, while measurable decreases of the... (Read more)
- 1105. J. Appl. Phys. 94, 301 (2003) , “Thermally stimulated luminescence from vapor-transport-equilibrated LiTaO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermally stimulated luminescence (TSL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize the emission of ultraviolet light from undoped LiTaO3. The crystals in this study were grown from a congruent melt and then subjected to a... (Read more)
- 1106. J. Appl. Phys. 94, 3004 (2003) , “Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC”, X. D. Chen, S. Fung, C. C. Ling, and C. D. BelingDeep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6HSiC after neutron irradiation. Deep levels situated at EC0.23, EC0.36/0.44, EC0.50, and... (Read more)
- 1107. J. Appl. Phys. 94, 2992 (2003) , “Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers”, M. Lazar, C. Raynaud, D. Planson, and J.-P. ChanteEpilayers of 6H and 4HSiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted... (Read more)
- 1108. J. Appl. Phys. 94, 2901 (2003) , “The 3838 Å photoluminescence line in 4H-SiC”, A. HenryWe report the results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC. For n+-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position... (Read more)
- 1109. J. Appl. Phys. 94, 2895 (2003) , “Proton implantation effects on electrical and recombination properties of undoped ZnO”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, and V. I. VdovinElectrical and optical properties of undoped n-ZnO crystals implanted with 50 keV protons with doses from 5×1013 to 5×1015 cm2 are reported. Proton implantation leads to a decrease of the carrier concentration in the near-surface region, but... (Read more)
- 1110. J. Appl. Phys. 94, 2888 (2003) , “Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO”, C. H. Seager and S. M. MyersRecent density functional theory calculations indicate that hydrogen is soluble in ZnO, effectively forming a shallow donor state. It has been suggested that these donors are responsible for the large increases in electron concentration seen in ZnO samples annealed at elevated temperatures in... (Read more)
- 1111. J. Appl. Phys. 94, 2510 (2003) , “Electron paramagnetic resonance study of electron and hole traps in β-BaB2O4 crystals”, Wei Hong and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate point defects in single crystals of β-BaB2O4 (commonly referred to as BBO). An irradiation with x rays at 77 K produces two dominant EPR spectra, one electronlike and the other holelike. The... (Read more)
- 1112. J. Appl. Phys. 94, 2234 (2003) , “Occupation probability for acceptor in Al-implanted p-type 4H–SiC”, Hideharu Matsuura, Koichi Sugiyama, Kazuhiro Nishikawa, Takashi Nagata, and Nobuya FukunagaAl-implanted p-type 4HSiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (~180 meV), and its first excited... (Read more)
- 1113. J. Appl. Phys. 94, 1965 (2003) , “Magnetic resonance investigation of Mn2+ in ZnO nanocrystals”, Huijuan Zhou, Detlev M. Hofmann, Albrecht Hofstaetter, and Bruno K. MeyerElectron paramagnetic resonance measurements were carried out to probe the structure of Mn2+ in ZnO nanocrystals with different surface conditions, modified by an annealing process. Changes in the spectra by the annealing treatment indicate the existence of three Mn2+ centers.... (Read more)
- 1114. J. Appl. Phys. 94, 1647 (2003) , “Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques”, F. Plazaola, J. Flyktman, and K. SaarinenDefect characterization of as-grown Zn1xBexSe compound semiconductors was studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons decreases linearly with... (Read more)
- 1115. J. Appl. Phys. 94, 1485 (2003) , “Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN”, H. K. Cho, C. S. Kim, and C.-H. HongIn n-type GaN films grown on sapphire substrates by metal-organic chemical vapor deposition such as unintentionally GaN and intentionally Si-doped GaN and In-doped GaN, the electron capture behaviors were investigated by deep level transient spectroscopy with various filling pulse durations.... (Read more)
- 1116. J. Appl. Phys. 94, 140 (2003) , “Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon”, Jinggang Lu, Magnus Wagener, and George RozgonyiThe effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential... (Read more)
- 1117. J. Appl. Phys. 94, 1 (2003) , “Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing”,We present an overview of negative bias temperature instability (NBTI) commonly observed in p-channel metaloxidesemiconductor field-effect transistors when stressed with negative gate voltages at elevated temperatures. We discuss the results of such stress on device and circuit... (Read more)
- 1118. J. Appl. Phys. 93, 9697-9702 (2003) , “Growth and characterization of GaN:Mn epitaxial films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, L. Grgens, J. B. Philipp, O. AmbacherThe oxidation states of Mn in epitaxial GaN films grown by plasma induced molecular beam epitaxy were investigated by electron spin resonance (ESR), elastic recoil detection, superconducting quantum interference device magnetization, and photothermal deflection spectroscopy measurements. Comparison... (Read more)
- 1119. J. Appl. Phys. 93, 9659 (2003) , “Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors”, V. Eremin, D. S. Poloskin, E. Verbitskaya, M. P. Vlasenko, and L. S. VlasenkoSpin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon pn junction detectors (diodes) formed on float-zone (FZ) silicon wafers. The main radiation defects,... (Read more)
- 1120. J. Appl. Phys. 93, 9395 (2003) , “Dislocation loop evolution in ion implanted 4H–SiC”, P. O. Å. Persson and L. Hultman4HSiC epilayers were implanted with 27Al in doses from 1.3×1014 cm2 to 7.8×1014 cm2. Dislocation loop formation after high-temperature annealing was studied by plan-view transmission electron microscopy and... (Read more)
- 1121. J. Appl. Phys. 93, 930 (2003) , “Effects of annealing ambient on the formation of compensation defects in InP”, A. H. DengPositron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The... (Read more)
- 1122. J. Appl. Phys. 93, 9104 (2003) , “Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy”, Sung-Yong Chung, Niu Jin, Anthony T. Rice, and Paul R. BergerDeep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n+-p junctions... (Read more)
- 1123. J. Appl. Phys. 93, 8995 (2003) , “Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals”, T. Monteiro, C. Boemare, and M. J. SoaresWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the... (Read more)
- 1124. J. Appl. Phys. 93, 8975 (2003) , “Infrared absorption bands associated with native defects in ZnGeP2”, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, and K. T. StevensAn optical absorption investigation from 10 to 296 K has been performed on bulk crystals of ZnGeP2 grown by the horizontal-gradient-freeze method. We identify three broad absorption bands in the spectral range from 1 to 4 µm that are due to native defects. At low temperature, a band... (Read more)
- 1125. J. Appl. Phys. 93, 8926 (2003) , “Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen”, Deren Yang, Jia Chu, Jin Xu, and Duanlin QueAfter oxidation at 1150 °C, oxidation-induced stacking faults (OSFs) in nitrogen-doped Czochralski crystal silicon (NCZSi) preannealed at 750 °C for 16 h followed by annealing at 1100 °C were investigated. It was observed that the size of OSFs in NCZSi samples was larger than... (Read more)
- 1126. J. Appl. Phys. 93, 753 (2003) , “Formation and passivation kinetics of gold-hydrogen complexes in n-type silicon”, A. ZamoucheReverse- and zero-bias annealing kinetics of Au-related deep levels in Au diffused P-doped silicon hydrogenated by wet chemical etching, have been determined. The dynamic behavior of these deep levels can enable an estimation of the number of hydrogen atoms in the defects. Differences in the dynamic... (Read more)
- 1127. J. Appl. Phys. 93, 6095 (2003) , “Nitrogen-related electron traps in Ga(As,N) layers (3% N)”, P. KrispinCapacitance spectroscopy is used to examine the compositional dependence of deep levels in Si-doped Ga(As,N) layers grown on GaAs. We find two predominant electron traps at about 0.80 and 1.1 eV above the valence band edge EV, which do not depend on composition. For N... (Read more)
- 1128. J. Appl. Phys. 93, 6056 (2003) , “Light-induced defects in KTaO3”, V. V. Laguta, M. D. Glinchuk, and I. P. BykovPhotoconductivity (PC), thermally stimulated conductivity (TSC), photoluminescence (PL), thermoluminescence (TL), and electron spin resonance (ESR) measurements have been made on single crystals of potassium tantalate over the temperature range 4.2290 K. We revealed two sorts of... (Read more)
- 1129. J. Appl. Phys. 93, 5905 (2003) , “Effects of ion implantation on electron centers in hydrogenated amorphous carbon films”, A. A. Konchits, M. Ya. Valakh, B. D. Shanina, S. P. Kolesnik, and I. B. YanchukElectron spin resonance (ESR) and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5×1015 to 1.2×1016 cm2. The as-grown films have small... (Read more)
- 1130. J. Appl. Phys. 93, 5388 (2003) , “Electrical and optical properties of Cr and Fe implanted n-GaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. V. Pashkova, and A. A. ShlenskyDeep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are... (Read more)
- 1131. J. Appl. Phys. 93, 5302 (2003) , “Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy”, Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi OgawaPhotoluminescence (PL) properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide (n-BuI) transport rate. The PL spectrum changed drastically even when a low dopant transport rate... (Read more)
- 1132. J. Appl. Phys. 93, 5140 (2003) , “GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation”, I. Usov and N. ParikhGaN films were implanted with 150 keV Ar+ at temperatures up to 1100 °C to a dose of 3×1015 cm2. Concentration profiles of Ar were measured by secondary ion mass spectroscopy and depth distributions of ion-induced damage were estimated from Rutherford... (Read more)
- 1133. J. Appl. Phys. 93, 5118 (2003) , “High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon”, N. Abdelgader and J. H. Evans-FreemanA combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct capture cross-section measurements has been used to investigate whether deep electronic states related to interstitial-type defects introduced by ion implantation originated from point or extended defects,... (Read more)
- 1134. J. Appl. Phys. 93, 4708 (2003) , “Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor”, J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. JanzénWe have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2,... (Read more)
- 1135. J. Appl. Phys. 93, 4590 (2003) , “Diffusion of deuterium (hydrogen) in previously hydrogenated (deuterated) III–V semiconductors”, Bertr, Theys, and François JomardHydrogenated (deuterated) C-doped GaAs and Zn-doped InP layers have been exposed to a deuterium (hydrogen) plasma. Diffusion profiles have been measured by secondary ion mass spectroscopy and compared to those obtained after exposure of as-grown (without any previous plasma treatment) samples in... (Read more)
- 1136. J. Appl. Phys. 93, 4331 (2003) , “Pb-type interface defects in (100)Si/SiO2 structures grown in ozonated water solution”, D. Pierreux and A. StesmansSi dangling bond interface defects (Pb0,Pb1) were probed by electron spin resonance in entities of (100)Si with ultrathin SiO2 grown in ozonated de-ionized water solution at room temperature. After photodesorption of passivating hydrogen,... (Read more)
- 1137. J. Appl. Phys. 93, 4097 (2003) , “Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO”, Jiaping HanThe dielectric properties of Mn-doped ZnO ceramics with electrically active grain boundaries at low temperatures of 1070 K were investigated by admittance spectroscopy. It was observed that the dielectric relaxation of the main shallow donors, zinc interstitial, in these samples occurred in... (Read more)
- 1138. J. Appl. Phys. 93, 3971 (2003) , “Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing”, P. K. HurleyIn this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitancevoltage characterization, the... (Read more)
- 1139. J. Appl. Phys. 93, 3674 (2003) , “Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions”, Tomonori Takahashi, Shigeto Fukatsu, and Kohei M. ItohSelf-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300 °C under equilibrium conditions using isotope heterostructures (natSiO2/28SiO2). Si... (Read more)
- 1140. J. Appl. Phys. 93, 3635 (2003) , “Effects of oxygen contamination on diffusion length in p+–n GaInNAs solar cells”, A. Balcioglu, R. K. Ahrenkiel, and D. J. FriedmanWe have studied deep level impurities in p+n GaInNAs solar cells using secondary ion mass spectroscopy (SIMS), capacitancevoltage (CV), and deep-level transient spectroscopy (DLTS). These films were grown by atmospheric and low-pressure... (Read more)
- 1141. J. Appl. Phys. 93, 3315 (2003) , “Electron paramagnetic resonance characterization of Cr3+ impurities in a β-Ga2O3 single crystal”, T. H. Yeom, I. G. Kim, and S. H. Leeβ-Ga2O3 single crystals doped with the Cr3+ ion were grown in an O2 atmosphere using the floating zone method. Electron paramagnetic resonance (EPR) spectra of the Cr3+ ion were recorded with an X band EPR spectrometer at 20 °C.... (Read more)
- 1142. J. Appl. Phys. 93, 3234 (2003) , “Characterization of deep level traps responsible for isolation of proton implanted GaAs”, H. Boudinov and A. V. P. CoelhoDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects... (Read more)
- 1143. J. Appl. Phys. 93, 3228 (2003) , “Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams”, Akira Uedono, Toshiki Mori, Kunitomo Morisawa, and Kouichi MurakamiHydrogen-terminated vacancies in Si+-implanted Si were studied by means of positron annihilation. After the Si+-ion implantation, hydrogen atoms were introduced into the damaged region using a hydrogen plasma [hydrogen-atom treatment (HAT)]. Monoenergetic positron beams were... (Read more)
- 1144. J. Appl. Phys. 93, 3117 (2003) , “Beryllium implantation induced deep level defects in p-type 6H–silicon carbide”, X. D. Chen, C. C. Ling, S. Fung, and C. D. BelingBeryllium implantation into p-type 6HSiC and subsequent thermal annealing have been performed. The deep level defects induced by this beryllium-implantation process have been investigated using deep level transient spectroscopy. Four deep levels labeled BEP1, BEP2, BEP3, and BEP4 were... (Read more)
- 1145. J. Appl. Phys. 93, 2719 (2003) , “Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC”, K. McDonald, R. A. Weller, S. T. Pantelides, and L. C. FeldmanThe relationship between nitrogen content and interface trap density (Dit) in SiO2/4HSiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces Dit near the conduction band, but the effect saturates... (Read more)
- 1146. J. Appl. Phys. 93, 2481 (2003) , “Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam”, A. UedonoZinc oxide (ZnO) thin films grown on ScAlMgO4 substrates were characterized by means of positron annihilation. We measured Doppler broadening spectra of annihilation radiation and photoluminescence spectra for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO.... (Read more)
- 1147. J. Appl. Phys. 93, 2449 (2003) , “Defect evolution of low energy, amorphizing germanium implants in silicon”, A. C. King, A. F. Gutierrez, A. F. Saavedra, and K. S. JonesThe defect evolution upon annealing of low energy, amorphizing germanium implants into silicon was studied using plan-view transmission electron microscopy. Implants with energies of 530 keV at an amorphizing dose of 1×1015 Ge + cm2 were annealed... (Read more)
- 1148. J. Appl. Phys. 93, 231 (2003) , “Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation”, E. Oliviero, M. F. Beaufort, and J. F. BarbotThermal helium desorption spectrometry was used to characterized helium implantation-induced defects in SiC. 6HSiC, 4HSiC, and βSiC samples were implanted with helium at energies ranging from 100 to 3 keV and doses ranging from 1×1013 to... (Read more)
- 1149. J. Appl. Phys. 93, 2301 (2003) , “Electrical and optical properties of n- and p-InSe doped with Sn and As”, S. ShigetomiThe impurity levels in Sn- and As-doped InSe have been investigated by photoluminescence (PL), photoacoustic (PA), and Hall effect measurements. The carrier transport in the Sn-doped n-type sample is governed by the donor level at 0.06 eV below the conduction band. Moreover, this donor level... (Read more)
- 1150. J. Appl. Phys. 93, 2289 (2003) , “Erbium-related band gap states in 4H– and 6H–silicon carbide”, G. Pasold, F. Albrecht, J. Grillenberger, U. Grossner, C. Hülsen, and W. WitthuhnThe band gap states of erbium (Er) in 4H and 6Hsilicon carbide (SiC) were investigated by means of deep level transient spectroscopy (DLTS). The samples were doped with Er by ion implantation followed by thermal annealing procedures. The DLTS measurements with the stable 167Er... (Read more)
- 1151. J. Appl. Phys. 93, 143 (2003) , “Platinum-related defects in silicon observed by optical absorption measurements”, N. Fukata, M. Suezawa, and K. SaitoWe investigated platinum (Pt)-related defects in silicon (Si) based on the measurement of their optical absorption and found optical absorption peaks related to Pt clusters. Pt and H were separately doped in FZSi by heating at 10001300 °C followed by quenching in water. Optical... (Read more)
- 1152. J. Appl. Phys. 93, 1428 (2003) , “Indium segregation to dislocation loops induced by ion implantation damage in silicon”, Taiji NodaIndium segregation to dislocation loops and indium co-diffusion were investigated using secondary ion mass spectrometry (SIMS) and a physically-based diffusion model. High doses of As (30 keV, 1×1015 cm2) and B (5 keV, 1×1015 cm2) were... (Read more)
- 1153. J. Appl. Phys. 93, 1069 (2003) , “Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current”, Klaus Knobloch, Martin Kittler, and Winfried SeifertMisfit dislocations containing different amounts of contamination were analyzed by deep-level-transient spectroscopy (DLTS). The amount of dislocation contamination was determined from the temperature dependence of the dislocation contrast, c(T), measured by electron-beam-induced... (Read more)
- 1154. J. Appl. Phys. 93, 10110 (2003) , “Silicon nanocrystals and defects produced by silicon and silicon-and-gold implantation in silica”, C. BarthouHigh-purity silica samples were implanted at room temperature with 2-MeV Si ions or sequentially with 2-MeV Si and 10-MeV Au ions. Three photoluminescence bands associated with the presence of defects are identified in the as-implanted samples. After a heat treatment at 1100 °C, a line appears... (Read more)
- 1155. J. Phys. Chem. Solids 64, 1027-1035 (2003) , “Optical absorption and fluorescence properties of Er3+ ion in MO–WO3–P2O5 glasses”, P. Subbalakshmi , N. VeeraiahTungsten phosphate glasses mixed with the three different modifier oxides, viz. PbO, ZnO and CaO doped with Er2O3 were prepared. The glasses were characterised by X-ray diffraction spectra, electron microscopy and differential thermal analysis. Optical absorption and photoluminescence spectra of... (Read more)
- 1156. Mater. Sci. Forum 433-436, 511 (2003) , “Calculation of hyperfine constants of defects in 4H-SiC”, A. Gali, P. Dek, N. T. Son, E. Janzn, H. J. von Bardeleben, Jean-Louis Monge
- 1157. Micro. Eng. 66, 59-64 (2003) , “Magnetic resonance studies on ZnO nanocrystals”, H. Zhou, A. Hofstaetter, D. M. Hofmann and B. K. MeyerZnO nanocrystals with diameters ranging from 4 to 50 nm were prepared via a wet chemical method and post-growth annealing treatments. The electron paramagnetic resonance (EPR) spectra of the nanocrystals show the resonance of electron centers with g-value close to that of the shallow donors in bulk... (Read more)
- 1158. Nucl. Instrum. Methods Phys. Res. B 206, 965 (2003) , “ESR characterization of activation of implanted phosphorus ions in silicon carbide”, J. Isoya, T. Ohshima, A. Ohi, N. Morishita and H. ItohPhosphorus ion implantations of 6H-SiC in the mean phosphorus concentration of the implanted layer of 1 × 1018 cm−3 were performed both at multi-fold energy between 9 and 21 MeV and at 340 keV. In the high-energy implantations at room temperature, 400, 800 and 1200 °C and in the 340... (Read more)
- 1159. Phys. Rev. B 68, 245105 (2003) , “Theory of time-domain measurement of spin-dependent recombination with pulsed electrically detected magnetic resonance”, Christoph Boehme and Klaus LipsThe theoretical foundations of the time domain measurement of spin-dependent charge carrier recombination by means of pulsed electrically detected magnetic resonance (EDMR) are outlined. Pulsed EDMR is based on the transient measurement of electrical currents in semiconductors after a coherent... (Read more)
- 1160. Phys. Rev. B 68, 205201 (2003) , “Ab initio study of the migration of intrinsic defects in 3C-SiC”, Michel Bockstedte, Alexander Mattausch, and Oleg PankratovThe diffusion of intrinsic defects in 3C-SiC is studied using an ab initio method based on density functional theory. The vacancies are shown to migrate on their own sublattice. The carbon split-interstitials and the two relevant silicon interstitials, namely the tetrahedrally... (Read more)
- 1161. Phys. Rev. B 68, 193204 (2003) , “Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states”, D. J. ChadiWe find that the As-antisite defect in GaAs which is the source of the stable EL2 and metastable EL2* centers can exist in at least eight different combinations of charge and structural states, twice as many as currently envisaged. In particular, results from first-principles... (Read more)
- 1162. Phys. Rev. B 68, 165206 (2003) , “EPR studies of the isolated negatively charged silicon vacancies in n-type 4H- and 6H-SiC: Identification of C3v symmetry and silicon sites”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, and J. IsoyaThe isolated negatively charged silicon vacancy (VSi-" align="middle">) in the hexagonal lattices of 4H- and 6H-SiC has been studied by electron paramagnetic resonance (EPR). The local structure was suggested to have Td symmetry from the... (Read more)
- 1163. Phys. Rev. B 68, 155208 (2003) , “Theoretical study of vacancy diffusion and vacancy-assisted clustering of antisites in SiC”, E. Rauls, Th. Frauenheim, A. Gali, P. DekUsing the self-consistent-charge density-functional-based tight-binding (SCC-DFTB) method, we have investigated the migration of vacancies at high temperatures, taking into account the entropy contribution to the Gibbs free energy. We have found that the energy barrier for sublattice migration of... (Read more)
- 1164. Phys. Rev. B 68, 125204 (2003) , “Magnetic properties of substitutional 3d transition metal impurities in silicon carbide”, M. S. Miao and Walter R. L. LambrechtUsing the linearized muffin-tin orbital (LMTO) method within both the atomic sphere approximation and full potential (FP) implementations and within the local spin-density-functional method and a supercell approach, we study the magnetic properties of cubic (3C) silicon carbide (SiC) doped by... (Read more)
- 1165. Phys. Rev. B 68, 125201 (2003) , “Aggregation of carbon interstitials in silicon carbide: A theoretical study”, A. Gali, P. Deák, P. Ordejón, N. T. Son, E. Janzén, and W. J. ChoykeAb initio supercell calculations have been carried out to investigate clusters of carbon interstitials in 3C- and 4H-SiC. Based on the calculated formation energies, the complex formation of carbon interstitials or their aggregation to carbon antisites is energetically favored... (Read more)
- 1166. Phys. Rev. B 68, 12102 (2003) , “240 GHz electron paramagnetic resonance studies of intrinsic defects in as-grown 4H SiC”, Valery V. Konovalov, Mary Ellen Zvanut, Johan van Tol240 GHz electron paramagnetic resonance (EPR) measurements of as-grown nominally semi-insulating 4H SiC detected two well-separated centers ID1 and ID2. The EPR parameters of ID1 and ID2 coincide with that of EI5 and EI6 centers previously detected in 2-MeV electron-irradiated p-type... (Read more)
- 1167. Phys. Rev. B 68, 085202 (2003) , “Physics and chemistry of hydrogen in the vacancies of semiconductors”, Bernadett Szûcs, Adam Gali, Zoltán Hajnal, Peter Deák, and Chris G. Van de WalleHydrogen is well known to cause electrical passivation of lattice vacancies in semiconductors. This effect follows from the chemical passivation of the dangling bonds. Recently it was found that H in the carbon vacancy of SiC forms a three-center bond with two silicon neighbors in the vacancy, and... (Read more)
- 1168. Phys. Rev. B 67, 33301 (2003) , “Electron spin coherence in semiconductors: Considerations for a spin-based solid-state quantum computer architecture”, Rogerio de Sousa and S. Das SarmaWe theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low-temperature decoherence is dominated by spin-spin interactions, through spectral... (Read more)
- 1169. Phys. Rev. B 67, 205202 (2003) , “Formation and annealing of nitrogen-related complexes in SiC”, U. Gerstmann, E. Rauls, Th. Frauenheim, and H. OverhofWe propose a mechanism for the annealing of vacancy-related defects in SiC, based on ab initio total energy calculations. Our mechanism is based on the formation and migration of carbon and nitrogen split interstitials resulting in CSi(NC)n or... (Read more)
- 1170. Phys. Rev. B 67, 195338 (2003) , “Layer-resolved kinetics of Si oxidation investigated using the reflectance difference oscillation method”, T. Yasuda, N. Kumagai, M. Nishizawa, S. Yamasaki, H. Oheda, and K. YamabeDry oxidation kinetics of the Si(001) surface has been investigated using reflectance difference oscillation to resolve atomic-scale phenomena. The activation energy for oxidation has been found to increase as the oxide-Si interface moves in the depth direction, reaching the value for bulk... (Read more)
- 1171. Phys. Rev. B 67, 193102 (2003) , “Signature of intrinsic defects in SiC: Ab initio calculations of hyperfine tensors”, Michel Bockstedte, Matthias Heid, and Oleg PankratovTo reveal the microscopic origin of the spin-resonance centers in 3C- and 4H-SiC, we perform first-principles calculations of the hyperfine tensors for vacancy-related defects and interstitials. The calculations for the silicon vacancy corroborates the earlier experimental identification. The... (Read more)
- 1172. Phys. Rev. B 67, 165325 (2003) , “Temperature dependence and mechanism of electrically detected ESR at the v=1 filling factor of a two-dimensional electron system”, Eugene Olshanetsky, Joshua D. Caldwell, Manyam Pilla, Shu-chen Liu, Clifford R. Bowers, Jerry A. Simmons, John L. RenoElectrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.34.2 K temperature range in an AlGaAs/GaAs multiple-quantum-well sample at the = 1 filling factor at 5.7 T. In the particular sample studied, the linewidth is approximately... (Read more)
- 1173. Phys. Rev. B 67, 165215 (2003) , “Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films”, T. Graf, M. Gjukic, M. Hermann, M. S. Brandt, M. Stutzmann, O. AmbacherHigh quality Mn-doped GaN and AlN films grown by molecular beam epitaxy have been investigated with X-band electron spin resonance (ESR). The observed resonance patterns are well described by the spin Hamiltonian for isolated 55Mn2+ centers with electronic spin S... (Read more)
- 1174. Phys. Rev. B 67, 165212 (2003) , “Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site”, I. G. Ivanov, B. Magnusson, and E. JanzénThe selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived. The ionization energy of the shallow nitrogen donor (at hexagonal site) is determined to be 61.4±0.5 meV by analyzing the photothermal ionization and... (Read more)
- 1175. Phys. Rev. B 67, 155203 (2003) , “Correlation between the antisite pair and the DI center in SiC”, A. Gali, P. Deák, E. Rauls, N. T. Son, I. G. Ivanov, F. H. C. Carlsson, E. Janzén, and W. J. ChoykeThe DI low temperature photoluminescence center is a well-known defect stable up to 1700 °C annealing in SiC, still its structure is not yet known. Combining experimental and theoretical studies, in this paper we will show that the properties of an antisite pair can reproduce... (Read more)
- 1176. Phys. Rev. B 67, 125207 (2003) , “Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study”, S. B. Orlinski, J. Schmidt, E. N. Mokhov, P. G. BaranovElectron-paramagnetic-resonance (EPR) and electron-spin-echo (ESE) studies have been performed that show that isolated VSi-, VSi0, and VC vacancies are the dominant intrinsic paramagnetic defects in SiC treated by room-temperature neutron... (Read more)
- 1177. Phys. Rev. Lett. 91, 246603 (2003) , “Electrical Detection of Spin Coherence in Silicon”, Christoph Boehme and Klaus LipsExperimental evidence is presented showing that photocurrents in silicon can be used as highly sensitive readout probes for coherent spin states of localized electrons, the prime candidates for quantum bits in various semiconductor based quantum computer concepts. Conduction electrons are subjected... (Read more)
- 1178. Phys. Rev. Lett. 91, 136101 (2003) , “Ab initio Simulations of Homoepitaxial SiC Growth”, M. C. Righi, C. A. Pignedoli, R. Di Felice, C. M. Bertoni, A. CatellaniWe present first-principle calculations on the initial stages of SiC homoepitaxial growth on the SiC(111)(×) surface. We show that the nonstoichiometric reconstruction plays a relevant role in favoring the attainment of high-quality films. The motivation is twofold: On one hand, we... (Read more)
- 1179. Phys. Rev. Lett. 91, 109601 (2003) , “Comment on "Identification of Lattice Vacancies on the Two Sublattices of SiC"”, J. W. SteedsA Comment on the Letter by A. A. Rempel et al., Phys. Rev. Lett. 89, 185501 (2002). The authors of the Letter offer a Reply.... (Read more)
- 1180. Phys. Rev. Lett. 90, 225502 (2003) , “Z1/Z2 Defects in 4H–SiC”, T. A. G. Eberlein, R. Jones, P. R. BriddonFirst-principles calculations are carried out on models for the Z1/Z2 defects in 4HSiC which are found in as-grown and irradiated n-type material. We show that an interstitial-nitrogeninterstitial-carbon defect is exceptionally thermally stable,... (Read more)
- 1181. Phys. Rev. Lett. 90, 185507 (2003) , “Hydrogen Incorporation in Diamond: The Nitrogen-Vacancy-Hydrogen Complex”, C. Glover, M. E. Newton, P. Martineau, D. J. Twitchen, J. M. BakerWe report the identification of the nitrogen-vacancy-hydrogen complex in a freestanding nitrogen-doped isotopically engineered single crystal diamond synthesized by chemical vapor deposition. The hydrogen atom is located in the vacancy of a nearest-neighbor nitrogen-vacancy defect and appears to be... (Read more)
- 1182. Phys. Rev. Lett. 90, 155901 (2003) , “Fluorine in Silicon: Diffusion, Trapping, and Precipitation”, X. D. Pi, C. P. Burrows, P. G. ColemanThe effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)
- 1183. Phys. Rev. Lett. 90, 137402 (2003) , “Vacancy Defects as Compensating Centers in Mg-Doped GaN”, S. Hautakangas, J. Oila, M. Alatalo, K. Saarinen, L. LIszkay, D. Seghier, H.P. GislasonWe apply positron annihilation spectroscopy to identify VNMgGa complexes as native defects in Mg-doped GaN. These defects dissociate in postgrowth annealings at 500800 °C. We conclude that VNMgGa complexes contribute to... (Read more)
- 1184. Physica B 340-342, 903-907 (2003) , “Pulsed EPR studies of shallow donor impurities in SiC”, J. Isoya, T. Ohshima, N. Morishita, T. Kamiya, H. Itoh, S. YamasakiSpin-lattice relaxation time (T1) and phase memory time (TM) of shallow donors in 3C-, 4H- and 6H-SiC have been measured in time domain by using pulsed EPR technique. The temperature dependence of T1 suggests that the Orbach process should be frozen at relatively high temperatures. Shallow donors in SiC are promising in attaining a sufficiently long phase memory time at temperatures much higher than Si:P. (Read more)
- 1185. Physica B 340-342, 743 (2003) , “Annealing study of a bistable defect in proton-implanted n-type 4H-SiC”, H. Kortegaard Nielsen, D. M. Martin, P. Lévêque, A. Hallén and B. G. SvenssonThe thermal stability and annealing kinetics of a bistable defect, recently reported by Martin (Master Thesis, KTH/ELE/FTE/2003-1) employing deep level transient spectroscopy and labelled the M-centre, has been studied using n-type epitaxially grown 4H-SiC layers implanted with 2.5 MeV protons to a... (Read more)
- 1186. Physica B 340, 362 (2003) , Elsevier , “Deep levels in rhodium-doped p-type MOCVD GaAs ”, A. Majid, M. Zafar Iqbal, A. Dadgar, D. Bimbergp-type GaAs epilayers grown by metal-organic chemical vapour deposition (MOCVD) technique, doped in situ with rhodium (Rh) impurity, have been studied by deep level transient spectroscopy (DLTS). A composite peak consisting of emission signals from at least two deep levels in the lower-half band gap is identified with Rh. This peak is resolved using double-correlation DLTS (DDLTS) measurements, providing the clear energy positions of the Rh-related deep levels as Ev+0.35 eV and Ev+0.51 eV. Emission rate signatures and other parameters are reported for these deep levels. They are observed to show electric-field dependent emission signatures. No significant minority carrier (electron) deep level could be clearly identified with Rh due to the presence of significant inadvertent features in the injection DLTS spectrum. Results are compared with our earlier study of Rh-doped, n-type, MOCVD GaAs. (Read more)
- 1187. Physica B 340, 358 (2003) , “Osmium related deep levels in n-type GaAs ”, M. Zafar Iqbal, A. Majid, A. Dadgar, D. BimbergDeep levels due to 5d transition metal, osmium (Os), in n-type GaAs epitaxial layers grown by metal-organic vapour-phase epitaxy are investigated using deep level transient spectroscopy (DLTS). Two clear and prominent peaks are observed in majority carrier (electron) emission spectra in GaAs:Os samples in addition to a weaker, broad feature at higher temperatures, which are absent in the Os-free, reference samples. The well-resolved, prominent peaks are attributed to deep levels associated with Os impurity having activation energies Ec−0.28 eV and Ec−0.41 eV at a junction electric field of not, vert, similar1.4×105 V/cm. Both of these peaks are found to be field dependent. Detailed data on emission rate signatures, apparent electron capture cross-sections and defect concentrations are reported for these levels. No Os-related deep level peaks could be clearly delineated in minority-carrier injection DLTS, at this stage, although some evidence is found for a low-energy deep level band. (Read more)
- 1188. Physica B 340-342, 225-229 (2003) , “Optical absorption of a Li-related impurity in ZnO”, Deirdre Mc Cabe, Karl Johnston, Martin O. Henry, Enda Mc Glynn, Eduardo Alves and J. John DaviesA defect associated with Li in ZnO is reported. This is an optical system which absorbs strongly in the red part of the spectrum: a doublet, the zero phonon lines are at 1.884 and 1.879 eV, respectively. The chemical nature of the centre is identified through isotope substitution. This is the first... (Read more)
- 1189. Physica B 340-342, 156 (2003) , “Electrical and multifrequency EPR study of nonstoichiometric defects in 4H-SiC”, E. N. Kalabukhova, S. N. Lukin, D. V. Savchenko and W. C. MitchelTwo paramagnetic intrinsic defects P and ND1 have been studied in both C-rich n-type 4H-SiC and undoped semi-insulating (s.i.) 4H-SiC in the dark and under illumination of the s.i. sample with light at 140 and 37 GHz in the temperature interval from 4.2 to 77 K. Photo EPR and Hall effect... (Read more)
- 1190. Physica B 340-342, 151 (2003) , “Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC”, W. E. Carlos, E. R. Glaser and B. V. ShanabrookWe have studied semi-insulating (SI) 4H SiC grown by physical vapor transport (PVT) and by high-temperature chemical vapor deposition (HTCVD) using electron paramagnetic resonance (EPR) and infrared photoluminescence (IR-PL) to better understand the defect(s) responsible for the SI behavior.... (Read more)
- 1191. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janzn, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 1192. Physica E 17, 320-321 (2003) , “Temperature dependence of electrically detected ESR at filling factor ν=1 in a 2DEG”, Eugene Olshanetsky, Manyam Pilla, Joshua D. Caldwell, Clifford R. Bowers, Jerry A. Simmons and John L. RenoElectrically detected electron spin resonance (ESR) was measured as a function of temperature for 0.3–4.2 K in a AlGaAs/GaAs multiple quantum well sample at filling factor ν=1. The ESR amplitude exhibits a maximum at about 2.2 K and vanishes with increased or decreased temperature. To... (Read more)
- 1193. Polyhedron 22, 225-233 (2003) , “Study on guanidino–carboxylate interactions in copper(II) ternary complexes of guanidinoacetic acid with glutamic and aspartic acids”, Jussara Lopes de Miranda and Judith FelcmanThe possibility of occurrence of biological relevant guanidino–carboxylate interactions was investigated in ternary systems involving guanidinoacetic (Gaa) and glutamic acid (Glu), aspartic acid (Asp) or glycine (Gly). The study was done in solution using potentiometry, ultraviolet visible... (Read more)
- 1194. Semiconductors 37, 918 (2003) , “The Relaxation of the Neutral State of Manganese in Gallium Arsenide”, V. F. Masterov, K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, B. E. SamorukovResults of investigations of the longitudinal magnetic relaxation of the neutral state of the Mn0 center in GaAs are presented. Relaxation mechanisms were determined from the broadening of the electron-spinresonance line in the temperature range of 3.4–8.2 K and from the variation in the nuclear relaxation rate in the range of 36–310 K. The nuclear relaxation investigation demonstrates that the electron relaxation is governed by the interaction between lattice vibrations and local vibrations of the center. This allows one to represent the electron relaxation at low temperatures as the consequence of anharmonicity of local vibrations of the electron dipole moment of the Mn0 center. (Read more)
- 1195. Semiconductors 37, 872 (2003) , “ESR of Interacting Manganese Centers in Gallium Arsenide”, K. F. Shtel'makh, M. P. Korobkov, I. G. OzerovESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and the values of the g factor shows that the interstitial center has a d5 electron configuration. The substitutional Mn create a strong random crystal field at the interstitial Mn ion. The results can be explained by assuming the existence of a nonzero dipole moment in the neutral state of Mn. (Read more)
- 1196. Solid State Commun. 126, 373 (2003) , Pergamon Press , “Thermoelectric power, magnetoresistance of lead chalcogenides in the region of phase transitions under pressure”, V.V. Shchennikov, S.V. OvsyannikovThe longitudinal and transverse thermomagnetic Nernst–Ettingshausen (N–E) effects were measured at ultrahigh pressure up to 20 GPa under closure of semiconductor gap at NaCl- and GeS-type phases of n-PbTe, p-PbSe and p-PbS. Near~3 GPa, the maxima of N–E effects and magnetoresistance (and hence of mobility of charge carriers) attributed to gapless state for PbTe and PbSe were established. The reversible sign inversion of transverse N–E effect indicating the change in scattering mechanism of charge carries have been revealed at high pressure phase of PbSe. The lowering of thermomagnetic effects with pressure gave the evidence of indirect semiconductor gap at high pressure GeS-type phases in contrary to NaCl-phases. (Read more)
- 1197. Appl. Phys. Lett. 81, 883-885 (2002) , “Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias”, A. Galeckas, J. Linnros, and P. PirouzThe extension of stacking faults in a forward-biased 4H-SiC PiN diodes by the recombination-enhanced motion of leading partial dislocations has been investigated by the technique of optical emission microscopy. From the temperature dependence of the measured velocity of the partials, an activation... (Read more)
- 1198. Appl. Phys. Lett. 81, 64-66 (2002) , “Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells”, Nethaji Dharmarasu and Masafumi YamaguchiWe report the properties of observed defects in n+/p-InGaP solar cells created by irradiation of protons of different energies. Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (Ev + 0.90±0.05 eV), HP2... (Read more)
- 1199. Appl. Phys. Lett. 81, 628-630 (2002) , “Pseudodielectric function of ZnGeP2 from 1.5 to 6 eV”, V. BlickleWe report pseudodielectric function data ε = εa1 + iεa2 and ε = εc1 + iεc2 for the optically uniaxial material... (Read more)
- 1200. Appl. Phys. Lett. 81, 622 (2002) , “Role of copper in the green luminescence from ZnO crystals”, N. Y. Garces, L. Wang, L. Bai, N. C. Giles, L. E. Halliburton, G. CantwellElectron paramagnetic resonance (EPR), photoluminescence, and infrared optical absorption have been used to investigate a ZnO crystal before and after a thermal anneal for 1 h in air at 900 °C. The sample was an undoped high quality crystal grown by the chemical vapor transport method. In... (Read more)
- 1201. Appl. Phys. Lett. 81, 5159-5161 (2002) , “The Mn3+/2+ acceptor level in group III nitrides”, T. Graf, M. Gjukic, M. S. Brandt, and M. StutzmannMolecular-beam-epitaxy grown GaN:Mn and AlN:Mn layers with Mn concentrations around 1020 cm3 were investigated by optical absorption and photoconductivity measurements. From electron spin resonance Mn is known to be mostly present in the neutral acceptor state in GaN... (Read more)
- 1202. Appl. Phys. Lett. 81, 5018-5020 (2002) , “Effects of Hf contamination on the properties of silicon oxide metal–oxide–semiconductor devices”, Chang Seok Kang, Katsunori Onishi, Laegu Kang, and Jack C. LeeEffects of hafnium (Hf) contamination on the properties of n+-polycrystalline-Si/SiO2/Si metaloxidesemiconductor (MOS) devices were investigated using p-type Si substrates implanted by Hf ions. Flat-band voltages (Vfb) and substrate... (Read more)
- 1203. Appl. Phys. Lett. 81, 4970-4972 (2002) , “Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study”, M. A. Reshchikov and H. MorkoçPhotoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied over a wide range of excitation intensities. A yellow luminescence (YL) band at about 2.2 eV saturates with increasing excitation intensity, whereas a green luminescence (GL) band at about 2.5 eV... (Read more)
- 1204. Appl. Phys. Lett. 81, 496-498 (2002) , “Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers”, Xiangyang Ma, Xuegong Yu, Ruixin Fan, and Deren YangThe carrier concentration profile in boron-doped p-type nitrogen-containing Czochralski silicon wafer subjected to a one-step high-temperature (1150 °C) annealing followed by a prolonged 450 °C annealing has been investigated by spreading resistance profile. It is found that the... (Read more)
- 1205. Appl. Phys. Lett. 81, 4958-4960 (2002) , “Low-dose n-type nitrogen implants in 4H-SiC”, N. S. SaksLightly-doped n-type layers have been fabricated in 4H-SiC by low-dose implantation of nitrogen ions and characterized using the Hall effect. Near-bulk electron mobility is achieved in the implanted layers. Activation rates for the implanted nitrogen ions, energies and densities of the... (Read more)
- 1206. Appl. Phys. Lett. 81, 4841-4843 (2002) , “Formation of the Z1,2 deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation”, I. Pintilie, L. Pintilie, and K. IrmscherAs-grown 4H-SiC epitaxial layers were investigated by deep-level transient spectroscopy to study the formation of the well-known Z1,2 defect with energy levels normally detected at about EC0.7 eV. Chemical vapor deposition, applying various... (Read more)
- 1207. Appl. Phys. Lett. 81, 40-42 (2002) , “Platinum–hydrogen complexes in silicon observed by measurements of optical absorption and electron spin resonance”, N. Fukata, T. Mchedlidze, M. Suezawa, and K. SaitoPlatinumhydrogen (PtH) complexes in Si doped with Pt and H by heating at 10001300 °C followed by quenching in water were investigated from the measurements of optical absorption at 5 K and electron spin resonance (ESR) at 8 K. Optical absorption peaks at 1909.1 and 1910.3... (Read more)
- 1208. Appl. Phys. Lett. 81, 3990-3992 (2002) , “Electrical characterization of acceptor levels in Be-implanted GaN”, Yoshitaka NakanoWe have investigated electrically the acceptor levels that are present in Be-implanted GaN. Slight p-type conductivity was attained in undoped GaN films by Be implantation and subsequent annealing at 1050 °C with a SiO2 encapsulation layer. Capacitance-frequency measurements... (Read more)
- 1209. Appl. Phys. Lett. 81, 3987-3989 (2002) , “Ga(As,N) layers in the dilute N limit studied by depth-resolved capacitance spectroscopy”, P. KrispinDeep carrier traps in the upper half of the band gap of Ga(As,N) layers in the dilute N limit (0.1%) are examined by depth-resolved capacitance spectroscopy on n-type Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. Distinct compositional fluctuations are revealed in the... (Read more)
- 1210. Appl. Phys. Lett. 81, 3945 (2002) , “Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC”, N. T. Son, B. Magnusson, and E. JanzénPhotoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (~95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the... (Read more)
- 1211. Appl. Phys. Lett. 81, 3816-3818 (2002) , “Stability and electronic structure of hydrogen–nitrogen complexes in GaAs”, W. Orellana and A. C. FerrazWe investigate the stability and electronic properties of defects formed by a substitutional nitrogen in GaAs (NAs) plus interstitial hydrogen atoms using first-principles total-energy calculations. We find the formation of strong NAsH bond when a single H atom is... (Read more)
- 1212. Appl. Phys. Lett. 81, 3488 (2002) , “On–off switching of edge direct tunneling currents in metal-oxide-semiconductor field-effect transistors”, Ming-Jer Chen and Ming-Pei LuOnoff switching behaviors or two-level random telegraph signals (RTS) are measured in the low voltage (1.40 V<VG<0.88 V) edge direct tunneling currents in ultrathin gate stack (10 Å oxide + 10 Å nitride) n-channel... (Read more)
- 1213. Appl. Phys. Lett. 81, 3356-3358 (2002) , “Cathodoluminescence of cubic boron nitride films deposited by chemical vapor deposition”, W. J. Zhang, H. Kanda, and S. MatsumotoCathodoluminescence (CL) characteristics of cubic boron nitride (cBN) films deposited by chemical vapor deposition were investigated. Combined with the results from Fourier-transformed infrared spectroscopy and Raman spectroscopy, the dependence of the emission energy and intensity on the phase... (Read more)
- 1214. Appl. Phys. Lett. 81, 3161-3163 (2002) , “Carrier diffusion and radiative recombination in CdTe thin films”, Manuel J. Romero, Timothy A. Gessert, and Mowafak M. Al-JassimWe employed cathodoluminescence spectroscopy and imaging to investigate the carrier diffusion and radiative recombination in CdTe thin films. We observed that carriers excited by the electron beam diffuse by excitons or by free electrons via donor states at low temperatures. The distribution and... (Read more)
- 1215. Appl. Phys. Lett. 81, 2989-2991 (2002) , “Theoretical evidence for the kick-out mechanism for B diffusion in SiC”, R. Rurali, P. Godignon, and J. RebolloIn this letter, we analyze by means of first-principles electronic structure calculations the diffusion of B impurities in 3C-SiC. We find, through molecular dynamics, that substitutional B at a Si lattice site is readily displaced by a nearby Si interstitial by the process known as a... (Read more)
- 1216. Appl. Phys. Lett. 81, 2962-2964 (2002) , “Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells”, Manuel J. Romero, David S. Albin, Mowafak M. Al-Jassim, Xuanzhi Wu, Helio R. Moutinho, and Ramesh G. DhereWe investigate the distribution of Cu acceptor states in CdTe thin films used in high-efficiency solar cells. These states are CuCd and Cui+" align="middle">VCd-" align="middle"> complexes, which are relatively deep and shallow acceptors,... (Read more)
- 1217. Appl. Phys. Lett. 81, 2734-2736 (2002) , “Effects of carbon codoping on lattice locations of erbium in silicon”, M. B. Huang and X. T. RenThe effects of carbon codoping on the lattice location of Er atoms in silicon have been investigated using ion beam channeling. A float-zone (FZ) Si (100) wafer was first amorphized to a depth of ~0.3 µm by Si ion implantation at 77 K. The amorphous Si layer was then implanted with... (Read more)
- 1218. Appl. Phys. Lett. 81, 2575-2577 (2002) , “Charge trapping in light-emitting SiO2 layers implanted with Ge+ ions”, T. Gebel, L. Rebohle, and W. SkorupaThe trapping effects of negative and positive charge in Ge-enriched SiO2 layers during high-field electron injection from the Si substrate of AlSiO2Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps... (Read more)
- 1219. Appl. Phys. Lett. 81, 2547-2549 (2002) , “Photoluminescence upconversion in 4H–SiC”, Mt. Wagner, I. G. Ivanov, L. Storasta, J. P. Bergman, B. Magnusson, W. M. Chen, and E. JanzénEfficient photoluminescence upconversion is observed in 4HSiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be... (Read more)
- 1220. Appl. Phys. Lett. 81, 2397-2399 (2002) , “Hydrogen redistribution induced by negative-bias-temperature stress in metal–oxide–silicon diodes”, Ziyuan LiuPoly-Si/SiO2/Si diodes in which oxides were grown thermally under wet oxidation conditions and subsequently treated by a post-oxidation anneal (POA) have been characterized electrically and chemically before and after applying negative-bias-temperature stress (NBTS). It was confirmed that... (Read more)
- 1221. Appl. Phys. Lett. 81, 1842-1844 (2002) , “Hydrogen plasma-enhanced thermal donor formation in n-type oxygen-doped high-resistivity float-zone silicon”, E. Simoen and C. ClaeysThe impact of plasma hydrogenation on the subsequent formation of thermal donors at 450 °C in n-type oxygen-doped high-resistivity float-zone silicon is investigated by a combination of electrical and spectroscopic techniques. It is shown that the increase of the doping concentration can... (Read more)
- 1222. Appl. Phys. Lett. 81, 1839 (2002) , “Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping”, S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf, S. T. PantelidesWe report first-principles calculations showing that protons in the vicinity of a SiSiO2 interface can behave in two different ways. At an abrupt interface without suboxide bonds (SiSi bonds at the oxide side of the interface) H+ does not become trapped but migrates... (Read more)
- 1223. Appl. Phys. Lett. 81, 1830-1832 (2002) , “Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy”, D. C. Look and D. C. ReynoldsAn N-doped, p-type ZnO layer has been grown by molecular beam epitaxy on an Li-diffused, bulk, semi-insulating ZnO substrate. Hall-effect and conductivity measurements on the layer give: resistivity = 4×101 Ω cm; hole mobility = 2 cm2/V s; and hole... (Read more)
- 1224. Appl. Phys. Lett. 81, 1821-1823 (2002) , “Electronic properties of vacancy–oxygen complex in Ge crystals”, V. P. Markevich, I. D. Hawkins, and A. R. PeakerIt is argued that the vacancyoxygen (VO) complex (A center) in Ge has three charge states: double negative, single negative, and neutral. Corresponding energy levels are located at Ec0.21 eV (VO/) and... (Read more)
- 1225. Appl. Phys. Lett. 81, 1818 (2002) , “Interface structures generated by negative-bias temperature instability in Si/SiO2 and Si/SiOxNy interfaces”, J. Ushio, T. Maruizumi, K. Kushida-AbdelghafarWe used a density functional method to investigate the mechanism of negative-bias temperature instability (NBTI) and resultant structural changes of Si/SiO2 and Si/SiOxNy interfaces. The reaction energies for the water- and hydrogen-originated... (Read more)
- 1226. Appl. Phys. Lett. 81, 1812-1814 (2002) , “Characteristics of deep levels in As-implanted GaN films”, L. Lee, W. C. Lee, H. M. Chung, M. C. Lee, W. H. Chen, and W. K. ChenHall, currentvoltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 °C thermal annealing for 60 min, one additional deep level located at... (Read more)
- 1227. Appl. Phys. Lett. 81, 165-167 (2002) , “Close to midgap trapping level in 60Co gamma irradiated silicon detectors”, I. PintilieThe deep level transient spectroscopy method was applied on standard and oxygenated float-zone silicon detectors exposed to high doses of 60Cogamma irradiation. We have detected and characterized a close to midgap trapping level having an ionization energy of... (Read more)
- 1228. Appl. Phys. Lett. 81, 1225-1227 (2002) , “Quantification of substitutional carbon loss from Si0.998C0.002 due to silicon self-interstitial injection during oxidation”, M. S. Carroll and J. C. SturmThe empirical reaction of substitutional carbon with silicon self-interstitials in Si0.998C0.002 layers pseudomorphically grown on Si (100) substrates has been quantified at 850 °C. During annealing of a sample with a thin Si0.998C0.002 layer capped... (Read more)
- 1229. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 1230. Appl. Phys. Lett. 80, 995-997 (2002) , “Electronic characterization of n-ScN/p+ Si heterojunctions”, F. Perjeru, X. Bai, and M. E. KordeschWe report the electronic characterization of n-ScN in heterojunctions, including deep level transient spectroscopy of electrically active deep levels. ScN material has been grown by plasma assisted physical vapor deposition on commercial p+ Si substrates.... (Read more)
- 1231. Appl. Phys. Lett. 80, 947-949 (2002) , “Simple expression for vacancy concentrations at half ion range following MeV ion implantation of silicon”, P. G. Coleman and C. P. BurrowsMean concentrations CD of aggregated vacancy-type point-defect structures in float-zone Si implanted with H+, B+, Si+, O+, and Ge2+ ions at energies between 0.45 and 4.0 MeV have been measured as a function of ion dose φ at... (Read more)
- 1232. Appl. Phys. Lett. 80, 805-807 (2002) , “Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy”, A. Hierro and A. R. ArehartThe effect of growth regime on the deep level spectrum of n-GaN using molecular-beam epitaxy (MBE) was investigated. As the Ga/N flux ratio was decreased towards Ga-lean conditions, the concentration of two acceptor-like levels, at Ec3.04 and 3.28 eV, increased... (Read more)
- 1233. Appl. Phys. Lett. 80, 749-751 (2002) , “Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions”, J. Q. Liu and M. SkowronskiThe structure of stacking faults formed in forward-biased 4H- and 6H-SiC pn diodes was determined using conventional and high-resolution transmission electron microscopy. Typical fault densities were between 103 and 104 cm1.... (Read more)
- 1234. Appl. Phys. Lett. 80, 4777 (2002) , “Deep-level defects in InGaAsN grown by molecular-beam epitaxy”, R. J. Kaplar and S. A. RingelDeep-level transient spectroscopy (DLTS) studies on both p-type unintentionally doped and n-type (Si-doped), 1.05 eV band gap InGaAsN grown by molecular-beam epitaxy are reported. Two majority-carrier hole traps were observed in p-type material, H3 (0.38 eV)... (Read more)
- 1235. Appl. Phys. Lett. 80, 4774 (2002) , “Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si”, S. Solmi, M. Attari, and D. NobiliThe effect of a point defect excess, vacancies, or, respectively, interstitials, on the deactivation kinetics of As in Si was verified on silicon on insulator (SOI) substrates uniformly doped at concentrations in the range 1.87×1020 cm3. SOI samples can... (Read more)
- 1236. Appl. Phys. Lett. 80, 4762-4764 (2002) , “Changes in Al-related photoluminescence in 4H-SiC caused by hydrogenation”, Yaroslav Koshka and Michael S. MazzolaBoth reduction of the intensity of aluminum-related photoluminescence after hydrogenation and the phenomenon of the optical quenching of the Al bound exciton (AlBE) previously reported for hydrogenated 6H-SiC was observed now in the 4H-SiC polytype. Hydrogenation caused also a reduction of the... (Read more)
- 1237. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 1238. Appl. Phys. Lett. 80, 4504 (2002) , “Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N”, M. R. Correia, S. Pereira, A. Cavaco, and E. PereiraWe report the observation of the 1.54 µm emission from optically excited Er3+ in an ion-implanted In0.07Ga0.93N layer epitaxially strained grown by metalorganic chemical vapor deposition. The Er was implanted at 150 keV with a dose of 1×1015... (Read more)
- 1239. Appl. Phys. Lett. 80, 4395-4397 (2002) , “Oxygen-related minority-carrier trapping centers in p-type Czochralski silicon”, Jan Schmidt, Karsten Bothe, and Rudolf HezelWe investigate minority-carrier trapping centers in p-type Czochralski (Cz) silicon by means of the quasi-steady-state photoconductance method. Boron and gallium-doped Cz silicon wafers of varying resistivities and oxygen contamination levels are examined. A clear correlation of the trap... (Read more)
- 1240. Appl. Phys. Lett. 80, 4354-4356 (2002) , “60Co gamma-irradiation-induced defects in n-GaN”, G. A. Umana-Membreno, J. M. Dell, T. P. Hessler, B. D. Nener, G. Parish, and L. FaraoneTransient capacitance measurements of Schottky diodes fabricated on nominally undoped n-type GaN exposed to 60Co gamma irradiation indicate the introduction of two defect levels with thermal activation energies of 89±6 and 132±11 meV. While the emission characteristics of... (Read more)
- 1241. Appl. Phys. Lett. 80, 4163-4165 (2002) , “Effects of amorphizing species' ion mass on the end-of-range damage formation in silicon”, Mark H. Clark and Kevin S. JonesThe effects of preamorphizing ion mass on the end-of-range (EOR) damage and subsequent enhanced diffusivity have been investigated. Amorphizing silicon with implants of 22 keV 28Si+, 32 keV 73Ge+, 40 keV 119Sn+, and 45 keV... (Read more)
- 1242. Appl. Phys. Lett. 80, 410 (2002) , “The level position of a deep intrinsic defect in 4H-SiC studied by photoinduced electron paramagnetic resonance”, M. E. Zvanut and V. V. KonovalovPhotoinduced electron paramagnetic resonance studies performed on nominally semi-insulating, high purity 4H-SiC have revealed charge transfer from an intrinsic defect (ID) to both the shallow boron acceptor and nitrogen donor. At 4 K, incident photon energy between 1.0 and 1.7 eV produces an... (Read more)
- 1243. Appl. Phys. Lett. 80, 3934-3936 (2002) , “Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence”, C. C. Ling, W. K. Mui, C. H. Lam, C. D. Beling, S. Fung, and M. K. LuiPositron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (VGa) related defect. Isochronal annealing studies showed at 300 °C annealing,... (Read more)
- 1244. Appl. Phys. Lett. 80, 3530-3532 (2002) , “Fluorine interaction with point defects, boron, and arsenic in ion-implanted Si”, Ali Mokhberi, Reza Kasnavi, Peter B. Griffin, and James D. PlummerThe role of fluorine in suppressing boron diffusion was investigated by utilizing a buried dopant marker to monitor the interaction of fluorine with interstitials. A boron spike with a peak concentration of 1.2×1018 cm3 followed by 500 nm of undoped silicon was... (Read more)
- 1245. Appl. Phys. Lett. 80, 3349-3351 (2002) , “Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence”, H. Y. Huang, C. H. Chuang, C. K. Shu, Y. C. Pan, W. H. Lee, W. K. Chen, W. H. Chen, and M. C. LeeWe have studied optical and electronic properties of isoelectronic P-implanted GaN films grown by metalorganic chemical vapor phase epitaxy. After rapid thermal annealing, a strong emission band around 430 nm was observed, which is attributed to the recombination of exciton bound to isoelectronic... (Read more)
- 1246. Appl. Phys. Lett. 80, 3328-3330 (2002) , “Lattice distortions and the transmuted-Ge related luminescence in neutron-transmutation-doped GaN”, K. Kuriyama, T. Tokumasu, Jun Takahashi, and H. KondoThe lattice distortion and the transmuted-Ge related luminescence in neutron-transmutation-doped (NTD) GaN are studied by combining Rutherford backscattering spectroscopy/channeling, Raman scattering, and photoluminescence methods. The lattice displacement of Ga atoms of ~0.12 Å from the 0001... (Read more)
- 1247. Appl. Phys. Lett. 80, 3298-3300 (2002) , “Nondestructive defect delineation in SiC wafers based on an optical stress technique”, Xianyun Ma, Mathew Parker, and Tangali S. SudarshanThe potential of using the optical stress technique to delineate the various defects in silicon carbide (SiC) wafers has been fully demonstrated. The observed defects include micropipes, dislocations, stress striations, grain boundary or dislocation walls, and regions of polytype nonuniformity.... (Read more)
- 1248. Appl. Phys. Lett. 80, 2878-2879 (2002) , “Creation and suppression of point defects through a kick-out substitution process of Fe in InP”, Y. W. Zhao, H. W. Dong, Y. H. Chen, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, and L. Y. LinIndium antisite defect InP-related photoluminescence has been observed in Fe-diffused semi-insulating (SI) InP. Compared to annealed undoped or Fe-predoped SI InP, there are fewer defects in SI InP obtained by long-duration, high-temperature Fe diffusion. The suppression of the formation... (Read more)
- 1249. Appl. Phys. Lett. 80, 2869-2871 (2002) , “Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO”, Naoki Ohashi, Takamasa Ishigaki, Nobuhiro Okada, Takashi Sekiguchi, Isao Sakaguchi, and Hajime HanedaA pulse-modulated plasma irradiation technique was applied to hydrogenation of ZnO. Three kinds of ZnO samples were employed to investigate the electronic state of hydrogen in ZnO. Secondary-ion-mass-spectroscopy analysis using isotope tracer revealed that the surface layer to 100 nm was doped with... (Read more)
- 1250. Appl. Phys. Lett. 80, 2657-2659 (2002) , “Charge state dependence of the diffusivity of interstitial Fe in silicon detected by Mössbauer spectroscopy”, H. P. Gunnlaugsson and G. WeyerInterstitial 57mFe atoms excited in the 14.4 keV Mössbauer state have been created in silicon at 400800 K as a result of the recoil imparted on these daughter atoms in the β decay of ion-implanted, substitutional 57Mn. Diffusional jumps... (Read more)
- 1251. Appl. Phys. Lett. 80, 240-242 (2002) , “Remarkable lattice recovery and low sheet resistance of phosphorus-implanted 4H–SiC (110)”, Y. Negoro, N. Miyamoto, T. Kimoto, and H. MatsunamiHigh-dose ion implantation of phosphorus into 4HSiC has been investigated. Phosphorus ion implantation with a 1×1016 cm2 dose at 800 °C into 4HSiC (0001) has resulted in a sheet resistance of 80 Ω/ after annealing at 1700 °C. A similar... (Read more)
- 1252. Appl. Phys. Lett. 80, 237-239 (2002) , “Anharmonicity of the C–H stretch mode in SiC: Unambiguous identification of hydrogen–silicon vacancy defect”, A. Gali, B. Aradi, and D. HeringerUsing first principles calculations, the vibronic properties of hydrogen in a silicon vacancy (VSi + H) are investigated in 3CSiC. The calculations show that the neutral VSi + H complex, which can bind an exciton, is stable only in lightly p-type SiC. This result... (Read more)
- 1253. Appl. Phys. Lett. 80, 2332-2334 (2002) , “Magnetophotoluminescence of neutral acceptor states in InSb”, J. A. H. Stotz and M. L. W. ThewaltMagnetophotoluminescence experiments on n-type bulk indium antimonide crystals have been performed using a cryogenically cooled interferometer. Both donoracceptor-pair and free electron-to-neutral acceptor recombination transitions have been observed for four distinct acceptor species.... (Read more)
- 1254. Appl. Phys. Lett. 80, 228-230 (2002) , “Enhanced nitrogen diffusion in 4H-SiC”, G. J. Phelps, N. G. Wright, E. G. Chester, C. M. Johnson, A. G. O'Neill, S. Ortolland, A. Horsfall, and K. VassilevskiExperimental evidence is given for boron (B) enhanced diffusion of nitrogen (N) in ion-implanted 4H silicon carbide (4H-SiC), when a nitrogen implant is co-doped within an existing boron p-type well. The co-implanted nitrogen is shown to diffuse continuously with time when samples are... (Read more)
- 1255. Appl. Phys. Lett. 80, 2278 (2002) , “Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction ”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Kensuke OkonogiWe clarified the generation of process-induced dislocations around a shallow trench isolation (STI) by using convergent-beam electron diffraction. Comparing the resolved shear strain (RSS) of 12 slip systems, we found that at the trench bottom corner the RSS on slip systems (1 1 1)[0 1 1] and... (Read more)
- 1256. Appl. Phys. Lett. 80, 2120-2122 (2002) , “Electron traps in Ga(As,N) layers grown by molecular-beam epitaxy”, P. KrispinDeep levels in the upper half of the band gap of strained Ga(As,N) with a GaN mole fraction of 3% are examined by deep-level transient Fourier spectroscopy on GaAs/Ga(As,N)/GaAs heterojunctions grown by molecular-beam epitaxy. In as-grown structures, we find a dominant electron trap at 0.25 eV below... (Read more)
- 1257. Appl. Phys. Lett. 80, 2111-2113 (2002) , “Structural instability of 4H–SiC polytype induced by n-type doping”, J. Q. Liu, H. J. Chung, T. Kuhr, Q. Li, and M. SkowronskiSpontaneous formation of stacking faults in heavily nitrogen-doped 4H-polytype silicon carbide crystals have been observed by transmission electron microscopy (TEM). Faults were present in as-grown boules and additional faults were generated by annealing in argon at 1150 °C. All faults had... (Read more)
- 1258. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 1259. Appl. Phys. Lett. 80, 1930-1932 (2002) , “Electrical activation studies of GaN implanted with Si from low to high dose”, James A. Fellows, Y. K. Yeo, and R. L. HengeholdElectrical activation studies of Si-implanted GaN grown on sapphire have been made as a function of ion dose and anneal temperature. Silicon was implanted at 200 keV with doses ranging from 1×1013 to 5×1015 cm2 at room temperature. The samples were... (Read more)
- 1260. Appl. Phys. Lett. 80, 1767-1769 (2002) , “Thermal quenching effect of an infrared deep level in Mg-doped p-type GaN films”, Keunjoo KimThe thermal quenching of an infrared deep level of 1.21.5 eV has been investigated on Mg-doped p-type GaN films, using one- and two-step annealing processes and photocurrent measurements. The deep level appeared in the one-step annealing process at a relatively high temperature of 900... (Read more)
- 1261. Appl. Phys. Lett. 80, 1731-1733 (2002) , “Optical properties of the deep Mn acceptor in GaN:Mn”, R. Y. Korotkov, J. M. Gregie, and B. W. WesselsThe optical and electrical properties of Mn-doped epitaxial GaN were studied. Low-temperature optical absorption measurements indicate the presence of a Mn-related band with a well-resolved fine structure. The zero-phonon line is at 1.418±0.002 eV with a full width at half maximum of 20±1... (Read more)
- 1262. Appl. Phys. Lett. 80, 1595-1597 (2002) , “Deep-level defect characteristics in pentacene organic thin films”, Yong Suk Yang, Seong Hyun Kim, Jeong-Ik Lee, Hye Yong Chu, Lee-Mi Do, Hyoyoung Lee, Jiyoung Oh, and Taehyoung ZyungOrganic thin-film transistors using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/V s and the grains larger than 1 µm. To study the characteristics of electronic charge concentrations and the interface traps of the pentacene thin films, the... (Read more)
- 1263. Appl. Phys. Lett. 80, 1586-1588 (2002) , “High-purity and high-quality 4H–SiC grown at high speed by chimney-type vertical hot-wall chemical vapor deposition”, K. Fujihira, T. Kimoto, and H. Matsunami4HSiC layers have been homoepitaxially grown at a high growth rate of 25 µm/h by chimney-type vertical hot-wall chemical vapor deposition at 1700 °C. Through photoluminescence measurement, the intrinsic defect, so-called L1 peak, was found to be reduced under a... (Read more)
- 1264. Appl. Phys. Lett. 80, 1577-1579 (2002) , “Trap-limited migration of vacancy-type defects in 7.5 keV H–-implanted Si”, Prakash N. K. DeenapanrayWe have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects... (Read more)
- 1265. Appl. Phys. Lett. 80, 1340-1342 (2002) , “Electrical characterization of vapor-phase-grown single-crystal ZnO”, F. D. Auret, S. A. Goodman, M. J. Legodi, and W. E. MeyerGold Schottky-barrier diodes (SBDs) were fabricated on vapor-phase-grown single-crystal ZnO. Deep-level transient spectroscopy, using these SBDs, revealed the presence of four electron traps, the major two having levels at 0.12 eV and 0.57 below the conduction band. Comparison with... (Read more)
- 1266. Appl. Phys. Lett. 80, 1334 (2002) , “Production of nitrogen acceptors in ZnO by thermal annealing”, N. Y. Garces, N. C. Giles, L. E. Halliburton, G. Cantwell, D. B. Eason, D. C. Reynolds, D. C. LookNitrogen acceptors are formed when undoped single crystals of zinc oxide (ZnO) grown by the chemical-vapor transport method are annealed in air or nitrogen atmosphere at temperatures between 600 and 900 °C. After an anneal, an induced near-edge absorption band causes the crystals to appear... (Read more)
- 1267. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 1268. Appl. Phys. Lett. 80, 1147-1149 (2002) , “Formation and decay mechanisms of electron–hole pairs in amorphous SiO2”, T. Uchino, M. Takahashi, and T. YokoWe present theoretical evidence for the creation of an electronhole pair at an edge-sharing SiO4 site that is supposed to exist in a-SiO2 as an intrinsic structural defect. The present electronhole pair consists of a nonbridging oxygen hole center and an... (Read more)
- 1269. Appl. Phys. Lett. 80, 1001-1003 (2002) , “Strong acceptor density and temperature dependences of thermal activation energy of acceptors in a Mg-doped GaN epilayer grown by metalorganic chemical-vapor deposition”, M. G. Cheong, K. S. Kim, C. S. Kim, R. J. Choi, H. S. Yoon, N. W. Namgung, E.-K. Suh, and H. J. LeeP-type GaN layers were grown on sapphire by metalorganic chemical-vapor deposition and then rapid thermal annealing (RTA) was performed to electrically activate Mg impurities. Varied acceptor densities were obtained by RTA temperature and Mg concentration. Temperature-dependent Hall effects... (Read more)
- 1270. J. Appl. Phys. 92, 889-894 (2002) , “Ramification of micropipes in SiC crystals”, M. Yu. Gutkin, A. G. Sheinerman, T. S. Argunova, J. H. Je, H. S. Kang, Y. Hwu, W.-L. TsaiThe ramification of micropipes is observed using scanning electron microscopy, optical microscopy, and synchrotron x-ray radiography. The conditions for the ramification of dislocated micropipes are determined theoretically within a model when the angles between dislocation lines are small. It is... (Read more)
- 1271. J. Appl. Phys. 92, 786 (2002) , “Structural, electrical, and optical properties of defects in Si-doped GaN grown by molecular-beam epitaxy on hydride vapor phase epitaxy GaN on sapphire”, P. Laukkanen, S. Lehkonen, P. Uusimaa, and M. PessaMolecular-beam epitaxy (MBE) has been utilized to grow Si-doped GaN layers on GaN/sapphire templates prepared by hydride vapor phase epitaxy. An extensive set of characterization techniques is applied to investigate the layers. Positron annihilation experiments indicate that the samples contain open... (Read more)
- 1272. J. Appl. Phys. 92, 77 (2002) , “Luminescence associated with copper in ZnGeP2”, Lijun Wang, Lihua Bai, K. T. Stevens, N. Y. Garces, and N. C. GilesBulk ZnGeP2 crystals were diffusion doped with copper and investigated using photoluminescence (PL) spectroscopy, photoluminescence excitation (PLE), and Fourier-transform-infrared spectroscopy. A PL band at 1.3 eV at 5 K was observed. The temperature dependence of the 1.3-eV PL band... (Read more)
- 1273. J. Appl. Phys. 92, 6666 (2002) , “Raman and cathodoluminescence study of dislocations in GaN”, H. Lei and H. S. LeipnerStructural and optical properties of freshly created and in-grown dislocations in GaN single crystal are investigated by Raman and cathodoluminescence (CL) microscopy. The introduction of a high density of dislocations by micro-indentation is accompanied by the generation of intrinsic point defects.... (Read more)
- 1274. J. Appl. Phys. 92, 6561 (2002) , “Many optical absorption peaks observed in electron-irradiated n-type Si”, M. Suezawa, N. Fukata, T. Mchedlidze, and A. KasuyaThe properties of many optical absorption peaks in electron-irradiated n-type Si crystals were studied. Specimens were prepared from various Si crystals. After chemical etching, they were irradiated with 3 MeV electrons at room temperature (RT). Their optical absorption spectra were measured... (Read more)
- 1275. J. Appl. Phys. 92, 6343 (2002) , “Correlation between the type of threading dislocations and photoluminescence characteristics at different doping concentrations of Si in GaN films”, Chinkyo Kim, Sungwoo Kim, Yoonho Choi, and Shi-Jong LeemAt various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided... (Read more)
- 1276. J. Appl. Phys. 92, 5942 (2002) , “Cation and anion vacancies in proton irradiated GaInP”, J. Dekker, J. Oila, and K. SaarinenDefects in electron irradiated GaInP grown by molecular beam epitaxy have been investigated using deep level transient spectroscopy (DLTS) and positron annihilation spectroscopy (PAS). PAS measurements indicate that vacancies are introduced at a high rate. Core annihilation curves, compared with... (Read more)
- 1277. J. Appl. Phys. 92, 5740 (2002) , “Model for electrical isolation of GaN by light-ion bombardment”, A. I. TitovWe present a model for electrical isolation of GaN by light-ion bombardment. In our model, a decrease in the concentration of free carriers responsible for isolation is assumed to be due to the formation of complexes of ion-beam-generated point defects with shallow donor or acceptor dopants. These... (Read more)
- 1278. J. Appl. Phys. 92, 5590 (2002) , “Electrical characterization of acceptor levels in Mg-doped GaN”, Yoshitaka NakanoThermal admittance and current deep-level transient spectroscopy techniques have been applied to Schottky diodes fabricated on Mg-doped GaN grown by metalorganic chemical vapor deposition to investigate the dependence of the Mg acceptor levels on the annealing temperature. Both measurement... (Read more)
- 1279. J. Appl. Phys. 92, 5566 (2002) , “Hyper-Rapid thermal defect annealing during grinding of ZnO powders”, M. G. Kakazey, M. Vlasova, M. Dominguez-Patiño, G. Dominguez-Patiño, G. Gonzalez-Rodriguez, and B. Salazar-HernandezWe report on the changes in the defect structure of ZnO particles that take place during the grinding of pure ZnO powders and mixtures ZnOSnO2 and ZnOTiO2 powders. The qualitative differences in the electron paramagnetic resonance spectra for different specimens... (Read more)
- 1280. J. Appl. Phys. 92, 549 (2002) , “Electrical activation of high concentrations of N+ and P+ ions implanted into 4H–SiC”, M. Laube, F. Schmid, and G. PenslComparative Hall effect investigations are conducted on N- and P-implanted as well as on (N + P)-coimplanted 4HSiC epilayers. Box profiles with three different mean concentrations ranging from 2.5×1018 to 3×1020 cm3 to a depth of 0.8 µm... (Read more)
- 1281. J. Appl. Phys. 92, 5238 (2002) , “Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy”, A. Y. Polyakov, A. V. Govorkov, and N. B. SmirnovMicrocathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the... (Read more)
- 1282. J. Appl. Phys. 92, 4989 (2002) , “Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy”, A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, and N. Y. PashkovaOptical absorption spectra, microcathodoluminescence (MCL) spectra, and electrical properties of GaMnN films grown by molecular-beam epitaxy with Mn concentration in the range of 3 to 10 at. % were studied. Optical absorption and MCL spectra show the presence of strong bands corresponding to the... (Read more)
- 1283. J. Appl. Phys. 92, 4465 (2002) , “Capacitance dispersion in ion implanted 4H and 6H-silicon carbide”, A. O. Evwaraye, S. R. Smith, W. C. Mitchel, and M. A. CapanoNitrogen doped 4HSiC and 6HSiC epitaxial layers with net doping concentration of 1.5×1015 cm3 were implanted with either Al, B, or Ar ions at 600 °C. The energy of the ions was 160 keV and at a dose of 2×1016 cm2.... (Read more)
- 1284. J. Appl. Phys. 92, 4307 (2002) , “Athermal annealing at room temperature and enhanced activation of low- energy boron implants with high-energy Si coimplantation”, Lin Shao, Xuemei Wang, and Jiarui LiuInteractions between shallow implanted boron and high-energy silicon implants have been investigated. Athermal annealing of implantation damage induced by low energy boron implants at room temperature was observed after coimplantation and such annealing effects were more obvious when the dosage of... (Read more)
- 1285. J. Appl. Phys. 92, 4126 (2002) , “Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN”, U. V. Desnica and M. PavloviThe report of thermoelectric effect spectroscopy (TEES) applied on semi-insulating GaN was presented. The type of TEES setup, especially suitable for film-on-substrate samples, was devised. TEES enabled determination of sign of observed deep traps. Using TEES and thermally stimulated current... (Read more)
- 1286. J. Appl. Phys. 92, 3755 (2002) , “High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon”, J. H. Evans-Freeman, P. Y. Y. Kan, and N. AbdelgaderWe have carried out high resolution Laplace deep level transient Spectroscopy (DLTS) and conventional DLTS on silicon implanted with very low doses of either silicon, germanium, erbium, or ytterbium, and compared the results to those from electron-irradiated silicon. DLTS spectra of all the samples... (Read more)
- 1287. J. Appl. Phys. 92, 3657 (2002) , “Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN”, Yasuo Koide, D. E. Walker, Jr, B. D. White, and L. J. BrillsonBoth luminescence properties and dissociation kinetics of MgH complex for as-grown Mg-doped GaN are simultaneously investigated by low-energy electron-excited nanoluminescence (LEEN) spectroscopy. Ultraviolet luminescence at 3.23.3 eV and blue luminescence at 2.82.9 eV are observed... (Read more)
- 1288. J. Appl. Phys. 92, 3410 (2002) , “Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements”, J. M. Tsia, C. C. Ling, C. D. Beling, and S. FungA ±100 V square wave applied to a Au/semi-insulating SIGaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the... (Read more)
- 1289. J. Appl. Phys. 92, 3130 (2002) , “Electrical and optical properties of GaN films implanted with Mn and Co”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, and N. Y. PashkovaOptical transmission spectra, microcathodoluminescence spectra, capacitancevoltage and capacitancefrequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of... (Read more)
- 1290. J. Appl. Phys. 92, 2575 (2002) , “Substitutional and interstitial carbon in wurtzite GaN”, A. F. WrightFirst-principles theoretical results are presented for substitutional and interstitial carbon in wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) and a shallow donor when substituted for gallium (CGa). Interstitial carbon... (Read more)
- 1291. J. Appl. Phys. 92, 2501 (2002) , “On the nature of ion implantation induced dislocation loops in 4H-silicon carbide”, P. O. Å. Persson and L. HultmanTransmission electron microscopy was used to investigate 11B, 12C, 14N, 27Al, 28Si, and 37Ar ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic... (Read more)
- 1292. J. Appl. Phys. 92, 2437 (2002) , “Optical properties of oxygen precipitates and dislocations in silicon”, S. Binetti, S. Pizzini, E. Leoni, and R. SomaschiniPhotoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements were used to study the origin of optical emissions in the 0.81.0 eV region of selected oxygen precipitated and dislocated silicon samples. It was shown that the D1 band, present in both types of samples, is the... (Read more)
- 1293. J. Appl. Phys. 92, 1968 (2002) , “Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance”, H. W. Dong, Y. W. Zhao, Y. H. Zhang, J. H. Jiao, J. Q. Zhao, and L. Y. LinDeep levels in semi-insulating (SI) InP obtained by annealing in iron phosphide (IP) ambiance have been characterized by optical transient current spectroscopy (OTCS). Compared with the OTCS result of the SI InP prepared by annealing in pure phosphorus (PP) ambiance, the IP SI InP presents only two... (Read more)
- 1294. J. Appl. Phys. 92, 1906 (2002) , “Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films”, E. San Andrés, A. del Prado, I. Mártil, and G. González-DíazThe bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600... (Read more)
- 1295. J. Appl. Phys. 92, 188 (2002) , “Grown-in defects in nitrogen-doped Czochralski silicon”, Xuegong Yu, Deren Yang, Xiangyang Ma, Jiansong Yang, Liben Li, and Duanlin QueGrown-in defects including oxygen precipitates and voids in nitrogen-doped Czochralski (NCZ) silicon have been investigated. It was found that the formation of grown-in oxygen precipitates in NCZ silicon can be divided into two stages. The large precipitates supposed to be enhanced by... (Read more)
- 1296. J. Appl. Phys. 92, 1238 (2002) , “Dissociation of nitrogen-oxygen complexes by rapid thermal anneal heat treatments”, J. L. Libbert, L. Mule'Stagno, and M. BananFloat zone silicon melt doped or implanted with nitrogen exhibits absorption bands in the midinfrared range that are caused by localized vibration modes of nitrogen pairs. Czochralski-grown silicon crystals melt doped with nitrogen exhibit both these lines and additional absorption lines related to... (Read more)
- 1297. J. Appl. Phys. 92, 1221 (2002) , “Thermoluminescence study of stoichiometric LiNbO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermoluminescence (TL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize point defects in Mg-doped stoichiometric LiNbO3. A broad TL emission, peaking at 440 nm, is observed near 94 K when these crystals are irradiated at 77 K and then rapidly... (Read more)
- 1298. J. Appl. Phys. 91, 9887 (2002) , “Effect of intrinsic defects on the electron mobility of gallium arsenide grown by molecular beam epitaxy and metal organic chemical vapor deposition”, Anouar JorioTemperature dependent electron mobility measurements are reported for lightly doped n-type gallium arsenide (GaAs) grown by metal organic chemical vapor deposition (MOCVD GaAs). Using the BrooksHerring model, the charge state of the impurity scattering centers is deduced to be 1. The... (Read more)
- 1299. J. Appl. Phys. 91, 9182 (2002) , “Electrical activation of implanted phosphorus ions in [0001]- and [11–20]-oriented 4H-SiC”, F. Schmid, M. Laube, and G. PenslAluminum-doped 4H-SiC epilayers with [0001]- or [1120]-oriented faces were implanted with phosphorus and subsequently annealed in a temperature range of 15501700 °C. The electrical activation of phosphorus ions was studied by Hall effect investigations. Identical free electron... (Read more)
- 1300. J. Appl. Phys. 91, 8919-8941 (2002) , “Transient Enhanced Diffusion of Boron in Si”, S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, H. E. Maes.On annealing a boron implanted Si sample at ~800 °C, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. After annealing for a sufficiently long time, the enhanced diffusion saturates. The enhanced diffusion is... (Read more)
- 1301. J. Appl. Phys. 91, 884 (2002) , “Defects in N/Ge coimplanted GaN studied by positron annihilation”, Yoshitaka Nakano and Tetsu KachiWe have applied positron annihilation spectroscopy to study the depth distributions and species of defects in N-, Ge-, and N/Ge-implanted GaN at dosages of 1×1015 cm2. For all the implanted samples, Ga vacancies introduced by ion-implantation are found to diffuse... (Read more)
- 1302. J. Appl. Phys. 91, 815 (2002) , “Paramagnetic defects in ultrafine silicon particles”, Minoru Dohi, Hiroshi Yamatani, and Tetsuo FujitaTwo defects in the surface oxide layer of ultrafine Si particles, temporarily named an EXL center and an EXH center, were investigated by electron spin resonance (ESR). The Si particles were prepared by a conventional gas evaporation method. The specimens were... (Read more)
- 1303. J. Appl. Phys. 91, 7926 (2002) , “Electron paramagnetic resonance study of La0.7Ca0.3–xBaxMnO3 lanthanum manganites”, A. N. UlyanovElectron paramagnetic resonance (ESR) study of La0.7Ca0.3xBaxMnO3 manganites (x = 0; 0.15; 0.3) is presented. Experimentally observed exponential decreasing of line intensity on temperature is in agreement with the deduced one... (Read more)
- 1304. J. Appl. Phys. 91, 6580 (2002) , “Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovConcentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying from 2.6 to 68 µm. Results were obtained from low temperature capacitancevoltage measurements before and after illumination and from deep level transient... (Read more)
- 1305. J. Appl. Phys. 91, 6488 (2002) , “Defects in silicon-on-insulator wafers and their hydrogen interaction studied by monoenergetic positron beams”, Akira Uedono and Zhi Quan ChenVacancy-type defects in separation-by-implanted oxygen wafers were probed using monoenergetic positron beams. We measured the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons. The species of the defects in Si-on-insulator (SOI) layers were identified as... (Read more)
- 1306. J. Appl. Phys. 91, 6388 (2002) , “Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis”, Y. ZhangDamage evolution and subsequent recovery in 4HSiC epitaxial layers irradiated with 1.1 MeV Al22 + " align="middle"> molecular ions at 150 K to ion fluences from 1.5×1013 to 2.25×1014 Al cm2 were studied by Rutherford... (Read more)
- 1307. J. Appl. Phys. 91, 6209 (2002) , “Cathodoluminescence from BN buried layers by high-dose ion implantation”, L. Barbadillo, M. Cervera, M. J. Hernández, P. Rodríguez, and J. PiquerasBoron, nitrogen, and carbon ions were co-implanted in silicon wafers, and subsequently annealed. Infrared spectra show the formation of BN-rich buried layers. The presence of a band at 1375 cm1 characteristic of boron nitride in a hexagonal configuration has been observed. Traces of... (Read more)
- 1308. J. Appl. Phys. 91, 5867 (2002) , “Chemical origin of the yellow luminescence in GaN”, S. O. KucheyevThe influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act... (Read more)
- 1309. J. Appl. Phys. 91, 5831 (2002) , “Hydrogen-defect complexes formed by neutron irradiation of hydrogenated silicon observed by optical absorption measurement”, N. Fukata, T. Ohori, and M. SuezawaNeutron-irradiation-induced defects in hydrogenated Si were investigated by detecting optical absorption due to their complexes with hydrogen. Specimens were doped with hydrogen by heating in H2 gas at 1300 °C followed by quenching in water. They were then irradiated with neutrons.... (Read more)
- 1310. J. Appl. Phys. 91, 5765 (2002) , “Deep levels and trapping mechanisms in chemical vapor deposited diamond”, Mara Bruzzi, David Menichelli, and Silvio SciortinoDetector-grade undoped chemical vapor deposited (CVD) diamond samples have been studied with thermally stimulated currents (TSC) and photoinduced current transient spectroscopy (PICTS) analyses in the temperature range 300650 K. Two previously unknown defects have been identified,... (Read more)
- 1311. J. Appl. Phys. 91, 5307 (2002) , “Vacancy-type defects in BaTiO3/SrTiO3 structures probed by monoenergetic positron beams”, Akira UedonoThin BaTiO3 films grown on SrTiO3 substrates were characterized by means of positron annihilation. The films were deposited by molecular-beam epitaxy without using oxygen source. We measured the Doppler broadening spectra of annihilation radiation and x-ray diffraction of the... (Read more)
- 1312. J. Appl. Phys. 91, 5158 (2002) , “Deep levels in strongly Si-compensated GaAs and AlGaAs”, Tadashige Sato and Toshio IshiwatariFive electron traps were detected successfully in heavily Si-doped GaAs and AlxGa1xAs of low Al content with a Si concentration of above 1×1019 cm3 using deep level transient spectroscopy. The junctions were grown by liquid... (Read more)
- 1313. J. Appl. Phys. 91, 4988 (2002) , “Native defects and self-diffusion in GaSb”, M. Hakala, M. J. Puska, and R. M. NieminenThe native defects in GaSb have been studied with first-principles total-energy calculations. We report the structures and the formation energies of the stable defects and estimate the defect concentrations under different growth conditions. The most important native defect is the GaSb... (Read more)
- 1314. J. Appl. Phys. 91, 4438 (2002) , “Electron paramagnetic resonance in boron carbide”, M. G. Kakazey, J. G. Gonzalez-Rodriguez, and M. V. VlasovaElectron paramagnetic resonance (EPR) signals from powdered samples of boron carbide B4C are recorded at g factor 2.0028±0.0002. The dependence on temperature and thermal treatment of the samples is studied. We demonstrated that native defects of boron carbide and conduction... (Read more)
- 1315. J. Appl. Phys. 91, 4136 (2002) , “Difference of secondary defect formation by high energy B+ and Al+ implantation into 4H–SiC”, Toshiyuki OhnoThe difference of secondary defect formation between high-energy B+ and Al+ implanted layers was investigated by transmission electron microscopy. At the same volume concentration of implanted ions, the density of secondary defects in the Al+ implanted layers is... (Read more)
- 1316. J. Appl. Phys. 91, 3931 (2002) , “Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors”, A. H. Deng, Y. Y. Shan, S. Fung, and C. D. BelingUnlike its conventional applications in lattice defect characterization, positron annihilation lifetime technique was applied to study temperature-dependent deep level transients in semiconductors. Defect levels in the band gap can be determined as they are determined by conventional deep level... (Read more)
- 1317. J. Appl. Phys. 91, 3741 (2002) , “Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon”, Yoshio Ohshita, Tuong Khanh Vu, and Masafumi YamaguchiThe structure of the B and O related defect complex in Czochralski (CZ)-grown Si crystal is theoretically studied by using ab initio calculations. When a B-doped CZ Si wafer is used as a solar cell material, light irradiation and/or minority carrier injection causes the solar cell conversion... (Read more)
- 1318. J. Appl. Phys. 91, 3471 (2002) , “Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy”, A. Kakanakova-Georgieva and R. YakimovaResults from electrical and optical measurements of boron in compensated p-type 4HSiC layers doped with Al, N, and B are reported. The layers were produced by sublimation epitaxy and characterized by secondary ion mass spectrometry, capacitancevoltage, and cathodoluminescence... (Read more)
- 1319. J. Appl. Phys. 91, 2890 (2002) , “Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers”, A. Kakanakova-Georgieva, R. Yakimova, and A. HenryA comparative analysis of cathodoluminescence spectra in 4HSiC layers with different N, Al, and B content is reported. The layers were produced by sublimation epitaxy and residual impurity concentrations were determined by secondary ion mass spectrometry. Epilayers doped with B in a wide... (Read more)
- 1320. J. Appl. Phys. 91, 2391 (2002) , “Thermal annealing study of 1 MeV electron-irradiation-induced defects in n+p InGaP diodes and solar cells”, Aurangzeb Khan and Masafumi YamaguchiThe study presents detailed isothermal and isochronal annealing recovery of photovoltaic parameters in n+/p InGaP solar cells after 1 MeV electron irradiation. Correlation of the solar cells characteristics with changes in the deep level transient spectroscopy data observed... (Read more)
- 1321. J. Appl. Phys. 91, 2028 (2002) , “Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC”, T. Egilsson, I. G. Ivanov, A. Henry, and E. JanzénWe report photoluminescence excitation spectra of the nitrogen (N) donor bound excitons (BE) in 4H- and 6H-SiC. The spectra reveal several excited states of the N-BEs. An attempt is made in the article to classify the N-BE states according to a simple shell model. ©2002 American Institute of... (Read more)
- 1322. J. Appl. Phys. 91, 178 (2002) , “Electrical characterization of magnesium implanted gallium nitride”, A. Krtschil, A. Kielburg, H. Witte, J. Christen, and A. KrostGallium nitride layers grown by molecular beam epitaxy on c axis oriented sapphire substrates were implanted with 180 keV magnesium ions with ion doses between 1×1014 and 1×1016 cm2. The implantation induced defect states were investigated by... (Read more)
- 1323. J. Appl. Phys. 91, 166 (2002) , “Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm–1 infrared absorption band”, A. Sassella and A. BorghesiThe possible use of the absorption band at 1207 cm1 for the measurement of the concentration of interstitial oxygen (Oi) in silicon samples subjected to a precipitation thermal treatment is discussed. The results of low temperature infrared absorption measurements... (Read more)
- 1324. J. Appl. Phys. 91, 1354 (2002) , “Identification of silicon as the dominant hole trap in YVO4 crystals”, N. Y. Garces and L. E. HalliburtonElectron paramagnetic resonance (EPR) and electronnuclear double resonance (ENDOR) have been used to characterize the dominant hole trap in undoped Czochralski-grown yttriumorthovanadate (YVO4) crystals. A silicon impurity, present inadvertently, replaces a vanadium ion and... (Read more)
- 1325. J. Appl. Phys. 91, 1324 (2002) , “Metastable defects in 6H–SiC: experiments and modeling”, C. G. Hemmingsson, N. T. Son, O. Kordina, and E. JanzénUsing various junction space-charge techniques, annealing, and simulation, a metastable defect in 6H SiC have been characterized. We suggest a configuration coordinate diagram with three configurations, where two of them can only exist when the defect is occupied by one or more electrons. The... (Read more)
- 1326. J. Appl. Phys. 91, 1198 (2002) , “Study of the conversion of the VO to the VO2 defect in silicon heat-treated under uniform stress conditions”, C. A. LondosThe VO defect is one of the major defects produced by irradiation in Cz-grown Si. Its presence in the infrared spectra is manifested by a localized vibration mode (LVM) band at 829 cm1. Upon annealing, the decay of this band is accompanied by the emergence in the spectra of another... (Read more)
- 1327. J. Appl. Phys. 91, 1046 (2002) , “Lattice site location of ion-implanted 8Li in Silicon Carbide”, S. Virdis, U. Vetter, C. Ronning, H. Kröger, and H. HofsässThe lattice sites of ion-implanted Li atoms in 6H-, 4H-, and 3C-SiC were studied. Radioactive 8Li ions (t1/2=0.84 s) were implanted with 60 keV into the crystalline SiC samples, and the channeling and blocking effects of 1.6 MeV alpha particles emitted in the decay were... (Read more)
- 1328. J. Phys. Chem. Solids 63, 555-559 (2002) , “OH− impurities in co-doped LiNbO3:Cr 3+:ZnO congruent crystals”, G. A. Torchia, J. O. Tocho , F. JaqueInfrared optical absorption has been used to study OH−impurities into congruent co-doped LiNbO3:Cr3+:ZnO crystals doped with different Zn2+ concentration. The OH− IR absorption spectra present three bands that can be associated with different OH− complex centres available in the... (Read more)
- 1329. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 1330. Mater. Sci. Eng. A 332, 356-361 (2002) , “The preparation and characterization of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Jing Shang, Xiaojun Sun, Weimin Cai and Haichen GuoIn this paper, ZnO ultrafine particles (UFPs) were prepared by the thermal decomposition method of the precursor, zinc carbonate hydroxide. The structure and properties of the as-prepared ZnO UFPs were studied using TEM, XRD, BET, SPS, ESR, Raman, XPS and UV–Vis absorption spectroscopy. It... (Read more)
- 1331. Mater. Sci. Eng. B 94, 8-13 (2002) , “Annealing effects in ZnO and ZnO–SnO2 powders during grinding”, M. Kakazey, J. Sanchez-Mondragon, G. Gonzalez-Rodriguez, M. Vlasova, T. Sreckovic, N. Nikolic ,M. M. RisticWe report on the differences in the defect structure of ZnO particles that take place at the grinding of powders of pure ZnO and mixture ZnO–SnO2. The defect structure formed was studied by electron paramagnetic resonance (EPR). The results demonstrate that a sequential two-stage thermal... (Read more)
- 1332. Phys. Rev. B 66, 45201 (2002) , “Single ion anisotropy of Mn-doped GaAs measured by electron paramagnetic resonance”, O. M. Fedorych, E. M. Hankiewicz, Z. Wilamowski, J. SadowskiAn electron-paramagnetic-resonance (EPR) study of molecular-beam-epitaxy-grown Mn-doped GaAs is presented. The resolved fine structure in insulating Ga1-xMnxAs allows us to evaluate the crystal-field parameters of the spin Hamiltonian. The exchange narrowing of the structure,... (Read more)
- 1333. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [Srman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
- 1334. Phys. Rev. B 66, 161202(R) (2002) , “Phosphorus and sulphur doping of diamond”, L. G. Wang and Alex ZungerPrevious calculations on n-type doping of diamond by P and S predicted that S has a shallower level and a higher solubility than P. Our first-principles calculations show that the opposite is true: Phosphorus impurity in diamond gives rise to a shallower donor level, and has a higher bulk solid... (Read more)
- 1335. Phys. Rev. B 66, 155214 (2002) , “Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC”, Mt. Wagner, N. Q. Thinh, N. T. Son, W. M. Chen, E. Janzn, P. G. Baranov, E. N. Mokhov, C. Hallin, J. L. LindstrmThe silicon vacancy in its neutral charge state (VSi) has been unambiguously identified in 4H- and 6H-SiC. This was achieved by observation of ligand hyperfine interaction with the four carbon atoms in the nearest-neighbor shell and the twelve silicon atoms in the next-nearest-neighbor... (Read more)
- 1336. Phys. Rev. B 66, 024106 (2002) , “Cascade overlap and amorphization in 3C-SiC: Defect accumulation, topological features, and disordering”, F. Gao and W. J. WeberMolecular dynamics (MD) simulations with a modified Tersoff potential have been used to investigate cascade overlap, damage accumulation, and amorphization processes in 3C-SiC over dose levels comparable to experimental conditions. A large number of 10 keV displacement cascades were randomly... (Read more)
- 1337. Phys. Rev. B 65, 85312 (2002) , “Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas Jr, W. J. Moore, B. V. Shanabrook, R.L. Henry, A. E. Wickenden, D. D. Koleske, H.Obloh, P. Kozodoy, S. P. DenBaars, U. K. MishraElectron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) experiments have been performed on a set of GaN epitaxial layers doped with Mg from 2.51018 to 5.01019 cm-3. The samples were also characterized by secondary-ion-mass... (Read more)
- 1338. Phys. Rev. B 65, 205202 (2002) , “Defects observed by optical detection of electron paramagnetic resonance in electron-irradiated p-type GaN”, L. S. Vlasenko, C. Bozdog, G. D. Watkins, F. Shahedipour, B. W. WesselsIrradiation of p-type (Mg-doped) GaN in situ at 4.2 K by 2.5 MeV electrons reduces the visible luminescence and creates a broad luminescence band in the infrared at ?0.95?eV. Upon annealing at 180 K, partial recovery of the visible luminescence occurs and a well resolved S=1 center is observed by... (Read more)
- 1339. Phys. Rev. B 65, 184108 (2002) , “Alphabet luminescence lines in 4H-SiC”, T. A. G. Eberlein, C. J. Fall, R. Jones, P. R. Briddon, S. bergFirst-principles density functional calculations are used to investigate antisite pairs in 4H-SiC. We show that they are likely to be formed in close proximity under ionizing conditions, and they possess a donor level and thermal stability consistent with the series of 40 photoluminescent lines... (Read more)
- 1340. Phys. Rev. B 65, 125207 (2002) , “Optical detection of electron paramagnetic resonance in low-dislocation-content GaN grown by hydride vapor-phase epitaxy”, C. Bozdog, G. D. Watkins, H. Sunakawa, N. Kuroda, A. UsuiThree broad overlapping photoluminescence bands, centered at ?1.75?eV (red), ?2.2?eV (yellow), and ?2.33?eV (green), are observed in low-dislocation-content GaN grown by the hydride vapor-phase epitaxy method. Optical detection of electron paramagnetic resonance (ODEPR) studies reveal that each is... (Read more)
- 1341. Phys. Rev. B 65, 085202 (2002) , “Divacancy in 3C- and 4H-SiC: An extremely stable defect”, L. Torpo, T. E. M. Staab, R. M. NieminenUsing first-principles calculations for divacancy defects in 3C- and 4H-SiC, we determine their formation energies and stability, their ionization levels, and relaxed geometries (symmetry point groups) for neutral as well as for charged states. For 4H-SiC all four possible nearest-neighbor divacancy... (Read more)
- 1342. Phys. Rev. Lett. 89, 256102 (2002) , “Limiting Step Involved in the Thermal Growth of Silicon Oxide Films on Silicon Carbide”, I. C. Vickridge, I. Trimaille, J.-J. Ganem, S. Rigo, C. Radtke, I. J. R. Baumvol, F. C. StedileThermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that... (Read more)
- 1343. Phys. Rev. Lett. 89, 185501 (2002) , “Identification of Lattice Vacancies on the Two Sublattices of SiC”, A. A. Rempel, W. Sprengel, K. Blaurock, K. J. Reichle, J. Major, and H.-E. SchaeferThe identification of atomic defects in solids is of pivotal interest for understanding atomistic processes and solid state properties. Here we report on the exemplary identification of vacancies on each of the two sublattices of SiC by making use of (i)electron irradiation, (ii)measurements of... (Read more)
- 1344. Phys. Rev. Lett. 89, 135507 (2002) , “Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe diffusion and reactions of hydrogenous species generated by single-pulsed F2 laser photolysis of SiO-H bond in SiO2 glass were studied in situ between 10 and 330 K. Experimental evidence indicates that atomic hydrogen (H0) becomes mobile even at temperatures as... (Read more)
- 1345. Phys. Rev. Lett. 88, 45504 (2002) , “Hydrogen: A Relevant Shallow Donor in Zinc Oxide”, Detlev M. Hofmann, Albrecht Hofstaetter, Frank Leiter, Huijuan Zhou, Frank Henecker, Bruno K. Meyer, Sergei B. Orlinskii, Jan Schmidt, Pavel G. BaranovElectron paramagnetic resonance and Hall measurements show consistently the presence of two donors ( D1 and D2) in state-of-the-art, nominally undoped ZnO single crystals. Using electron nuclear double resonance it is found that D1 shows hyperfine interaction with more than 50 shells of surrounding... (Read more)
- 1346. Phys. Rev. Lett. 88, 205502 (2002) , “Metastability of Amorphous Silicon from Silicon Network Rebonding”, R. Biswas, B. C. Pan, and Y. Y. YeWe propose a network rebonding model for light-induced metastability in amorphous silicon, involving bonding rearrangements of silicon and hydrogen atoms. Nonradiative recombination breaks weak silicon bonds and generates dangling bondfloating bond pairs, with very low activation energies. The... (Read more)
- 1347. Appl. Catalysis A 213, 173-177 (2001) , “In situ electron paramagnetic resonance (EPR) study of surface oxygen species on Au/ZnO catalyst for low-temperature carbon monoxide oxidation”, Zhengping Hao, Liangbo Fen, G. Q. Lu, Jianjun Liu, Lidun An and Hongli WangSome paramagnetic superoxide ions detectable by electron paramagnetic resonance (EPR) can be generated on Au/ZnO catalyst by oxygen adsorption at room temperature as well as at 553 K. In both the cases, the O2− ions are present on the catalyst surface. The disappearance of the O2−... (Read more)
- 1348. Appl. Phys. Lett. 79, 961-963 (2001) , “Radiotracer investigation of a deep Be-related band gap state in 4H-SiC”, F. Albrecht, J. Grillenberger, G. Pasold, and W. WitthuhnOne Be-related deep level in the band gap of 4H-SiC was identified by radiotracer deep level transient spectroscopy (DLTS). The radioactive isotope 7Be was recoil implanted into p-type as well as n-type 4H-SiC for these radiotracer experiments. DLTS spectra were taken... (Read more)
- 1349. Appl. Phys. Lett. 79, 943-945 (2001) , “Green luminescent center in undoped zinc oxide films deposited on silicon substrates”, Bixia Lin and Zhuxi FuThe photoluminescence (PL) spectra of the undoped ZnO films deposited on Si substrates by dc reactive sputtering have been studied. There are two emission peaks, centered at 3.18 eV (UV) and 2.38 eV (green). The variation of these peak intensities and that of the IV properties of... (Read more)
- 1350. Appl. Phys. Lett. 79, 931-933 (2001) , “Influence of microstructure on electrical properties of diluted GaNxAs1–x formed by nitrogen implantation”, J. Jasinski, K. M. Yu, W. Walukiewicz, J. Washburn, and Z. Liliental-WeberStructural studies of GaAs implanted with N or coimplanted with other elements showed that, in addition to typical postimplant defects, small voids were present in the implanted region in such materials. Comparison of the microstructure found in these layers with electrical results indicates that... (Read more)
- 1351. Appl. Phys. Lett. 79, 69-71 (2001) , “Carrier relaxation dynamics for As defects in GaN”, Bernard Gil, Aurélien Morel, Thierry Taliercio, and Pierre LefebvreLong decay times in the 50150 ns range have been measured for the characteristic blue photoluminescence that peaks at 2.6 eV in GaN:As. We interpret these long decay times according to the theoretical predictions that this blue photoluminescence is caused by the incorporation of arsenic on the... (Read more)
- 1352. Appl. Phys. Lett. 79, 4539-4540 (2001) , “Traps at the bonded interface in silicon-on-insulator structures”, I. V. Antonova, O. V. Naumova, D. V. Nikolaev, and V. P. PopovIn this study, we compared the trap density distributions, Dit, in the band gap of silicon at the Si/thermal SiO2 interface and at the bonded interface of the silicononinsulator structure, deduced from deep level transient spectroscopy measurements. The trap... (Read more)
- 1353. Appl. Phys. Lett. 79, 4369-4371 (2001) , “Synthesis and characterization of luminescent ZrO2:Mn, Cl powders”, M. García-HipólitoZrO2:Mn, Cl luminescent powders have been synthesized at temperatures ranging from 250 to 500 °C. X-ray diffraction measurements indicate changes in the crystallinity of the material as a function of the processing temperature. The photoluminescence spectra show bands associated with... (Read more)
- 1354. Appl. Phys. Lett. 79, 4328-4330 (2001) , “Silicon self-diffusion under extrinsic conditions”, Ant Ural, P. B. Griffin, and J. D. PlummerSelf-diffusion in silicon is investigated under extrinsic carrier conditions by monitoring the diffusion of 30Si in isotopically enriched silicon layers with boron and phosphorus background doping. At 1000 °C, we find that the Si self-diffusion coefficient is slightly enhanced in both... (Read more)
- 1355. Appl. Phys. Lett. 79, 4313-4315 (2001) , “Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?”, J. Gebauer, R. Zhao, P. Specht, and E. R. WeberWe investigate native defects in nonstoichiometric GaAs layers grown at low temperatures by molecular-beam epitaxy (LT-GaAs) doped with Be. Ga vacancies (VGa) are found by positron annihilation in all layers. The concentration of VGa is independent of the Be... (Read more)
- 1356. Appl. Phys. Lett. 79, 4243 (2001) , “Local lattice strain distribution around a transistor channel in metal–oxide–semiconductor devices”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Shinya Ito, Takeshi Toda, Kiyotaka ImaiThe local lattice strain around the channel in metaloxidesemiconductor (MOS) field-effect transistors of 0.1 µm gate length was measured by using convergent-beam electron diffraction. It was found that the normal strain along the gate-length direction is compressive beneath the... (Read more)
- 1357. Appl. Phys. Lett. 79, 4145-4147 (2001) , “Complete suppression of the transient enhanced diffusion of B implanted in preamorphized Si by interstitial trapping in a spatially separated C-rich layer”, E. Napolitani, A. Coati, D. De Salvador, and A. CarneraA method for completely suppressing the transient enhanced diffusion (TED) of boron implanted in preamorphized silicon is demonstrated. Boron is implanted in a molecular beam epitaxy (MBE) grown silicon sample that has been previously amorphized by silicon implantation. The sample is then annealed... (Read more)
- 1358. Appl. Phys. Lett. 79, 4106-4108 (2001) , “Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon”, A. Sassella and A. BorghesiThe spurious contribution of oxide precipitates to the infrared absorption of interstitial oxygen in silicon is determined from spectra collected at 7 K for samples with different initial interstitial oxygen Oi concentration subjected to a three-step thermal treatment. These data... (Read more)
- 1359. Appl. Phys. Lett. 79, 4034-4036 (2001) , “Border traps in 6H-SiC metal–oxide–semiconductor capacitors investigated by the thermally-stimulated current technique”, H. Ö. Ólafsson and E. Ö. SveinbjörnssonWe demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metaloxidesemiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial... (Read more)
- 1360. Appl. Phys. Lett. 79, 3950 (2001) , “Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshuser, H. ItohAnnealing behavior of vacancies and the Z1/2 levels in n-type 4HSiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects... (Read more)
- 1361. Appl. Phys. Lett. 79, 3944-3946 (2001) , “Luminescence from stacking faults in 4H SiC”, S. G. Sridhara, F. H. C. Carlsson, J. P. Bergman, and E. JanzénA previously unreported photoluminescence spectrum observed in certain 4H SiC bipolar diodes after extended forward voltage operation is reported. We assign this emission to exciton recombination at local potential fluctuations caused by stacking faults, which are created during operation of the... (Read more)
- 1362. Appl. Phys. Lett. 79, 3630-3632 (2001) , “Reconstruction defects on partial dislocations in semiconductors”, João F. JustoUsing ab initio total energy calculations, we investigated the structural and electronic properties of reconstruction defects, or antiphase defects, in the core of a 30° partial dislocation in silicon and gallium arsenide. In GaAs, we identified two different reconstruction defects in the... (Read more)
- 1363. Appl. Phys. Lett. 79, 359-361 (2001) , “Mechanism of electron trapping in Ge-doped SiO2 glass”, T. Uchino, M. Takahashi, and T. YokoWe present a possible mechanism of electron trapping in Ge-doped SiO2 glass on the basis of first-principles quantum chemical calculations on clusters of atoms modeling the local structures in the glassy system. The calculations suggest that the so-called "Ge(1) and Ge(2)"... (Read more)
- 1364. Appl. Phys. Lett. 79, 326-328 (2001) , “Room temperature persistent spectral hole burning in x-ray irradiated Eu3 + -doped borate glasses”, Woon Jin Chung and Jong HeoIrradiation of x-rays has induced room-temperature persistent spectral hole burning (PSHB) in Eu3 + -doped borate glasses melted under an inert atmosphere. Defects were formed by x-ray irradiation and these defects, especially electron trapping centers near rare-earth ions in glasses,... (Read more)
- 1365. Appl. Phys. Lett. 79, 3239-3241 (2001) , “The nature of arsenic incorporation in GaN”, A. Bell and F. A. PonceA systematic study of the nature of arsenic incorporation in GaN grown by molecular-beam epitaxy is presented. The samples were grown with concentrations of arsenic ranging from 3.4×1017 to 4.2×1018 cm3. Secondary ion mass spectroscopy data show... (Read more)
- 1366. Appl. Phys. Lett. 79, 3089-3091 (2001) , “Formation of nonradiative defects in molecular beam epitaxial GaNxAs1–x studied by optically detected magnetic resonance”, N. Q. Thinh, I. A. Buyanova, and W. M. ChenThe formation of two nonradiative defects (i.e., an AsGa-related complex and an unknown deep-level defect with g = 2.03) in GaNxAs1x epilayers and GaAs/GaNxAs1x multiple-quantum-well structures,... (Read more)
- 1367. Appl. Phys. Lett. 79, 3080-3082 (2001) , “Fingerprints of two distinct defects causing light-induced photoconductivity degradation in hydrogenated amorphous silicon”, Stephan Heck and Howard M. BranzWe find distinct experimental fingerprints of two metastable defects created during illumination of hydrogenated amorphous silicon. The well-studied threefold-coordinated silicon dangling bond defect has an anneal activation energy near 1.1 eV and dominates annealing experiments above about 110... (Read more)
- 1368. Appl. Phys. Lett. 79, 3074-3076 (2001) , “Electrical characterization of 1.8 MeV proton-bombarded ZnO”, F. D. Auret, S. A. Goodman, M. Hayes, M. J. Legodi, and H. A. van LaarhovenWe report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed thereon before and after bombarding them with 1.8 MeV protons. From capacitancevoltage measurements, we found that ZnO is remarkably resistant to high-energy proton bombardment and that each... (Read more)
- 1369. Appl. Phys. Lett. 79, 3068-3070 (2001) , “Lattice location of phosphorus in n-type homoepitaxial diamond films grown by chemical-vapor deposition”, Masataka HasegawaThe lattice location of phosphorus dopant atoms in n-type homoepitaxial diamond {111} films grown by chemical-vapor deposition has been investigated by Rutherford backscattering spectrometry and particle-induced x-ray emission under ion-channeling conditions. It is found that phosphorus... (Read more)
- 1370. Appl. Phys. Lett. 79, 2922-2924 (2001) , “Defect annealing in Cu(In,Ga)Se2 heterojunction solar cells after high-energy electron irradiation”, A. Jasenek, H. W. Schock, J. H. Werner, and U. RauCu(In,Ga)Se2/CdS/ZnO solar cells need at least 1018 cm2 electrons of an energy of 1 MeV to degrade in their power conversion efficiency by more than 25%. Even after such high irradiation doses, annealing of the irradiated solar cells at temperatures between... (Read more)
- 1371. Appl. Phys. Lett. 79, 2901-2903 (2001) , “Observation of nitrogen vacancy in proton-irradiated AlxGa1–xN”, Qiaoying Zhou and M. O. ManasrehThe optical absorption spectra of nitrogen vacancy (VN) in proton-irradiated AlxGa1xN samples are observed. The spectra obtained for samples with 0.55x1 exhibit a peak and a shoulder with their energy positions dependent on the Al mole... (Read more)
- 1372. Appl. Phys. Lett. 79, 2877-2879 (2001) , “Identification of surface anion antisite defects in (110) surfaces of III–V semiconductors”, Ph. Ebert, P. Quadbeck, and K. UrbanWe identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tunneling microscopy combined with density-functional theory calculations. In contrast to subsurface arsenic antisite defects, surface antisite defects are electrically inactive and have a very... (Read more)
- 1373. Appl. Phys. Lett. 79, 2728-2730 (2001) , “Tellurium antisites in CdZnTe”, Muren Chu, Sevag Terterian, David Ting, C. C. Wang, H. K. Gurgenian, and Shoghig MesropianThe electrical properties of CdTe and Cd1xZnxTe crystals grown under excess tellurium by a modified Bridgman technique are critically dependent on the zinc content. Below an x value of 0.07, the as-grown CdZnTe crystals are n type while, above... (Read more)
- 1374. Appl. Phys. Lett. 79, 2570-2572 (2001) , “Identification of Si and O donors in hydride-vapor-phase epitaxial GaN”, W. J. MooreDonor impurity excitation spectra in the infrared from two high-quality, not-intentionally doped, hydride-vapor-phase epitaxial GaN wafers are reported. Two previously observed shallow donors which we designate N1 and N2 were observed in both wafers. However, spectra of one wafer are dominated by N1... (Read more)
- 1375. Appl. Phys. Lett. 79, 2405-2407 (2001) , “Deep levels of tantalum in silicon carbide and incorporation during crystal growth”, J. Grillenberger, G. Pasold, and W. WitthuhnBand-gap states of tantalum in n-type 6H and 15Rsilicon carbide (SiC) were investigated by deep-level transient spectroscopy (DLTS). The samples were doped with Ta by ion implantation followed by an annealing procedure. DLTS measurements reveal two implantation-induced band-gap... (Read more)
- 1376. Appl. Phys. Lett. 79, 2402-2404 (2001) , “Can we make the SiC–SiO2 interface as good as the Si–SiO2 interface?”, Massimiliano Di VentraA simple analysis based on the bulk valence and conduction densities of states was employed to estimate the interface-state densities for interfaces between the three most common SiC polytypes (3C, 4H, and 6H) and SiO2. We found that all polytypes had comparable conduction-band... (Read more)
- 1377. Appl. Phys. Lett. 79, 200-202 (2001) , “Nitrogen-related complexes in gallium arsenide”, J. E. LowtherA first-principles pseudopotential method has been used to study some potentially important metastable defects in N-doped GaAs. Formation energies have been obtained and related to those of As and Ga vacancies in the intrinsic material. Of the structures considered, two are identified that crucially... (Read more)
- 1378. Appl. Phys. Lett. 79, 1983-1985 (2001) , “Binding energy of vacancies to clusters formed in Si by high-energy ion implantation”, R. KalyanaramanMeasurements of the binding energy (Eb) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy clusters were created by 2 MeV, 2×1015 cm2 dose Si implant and annealing. To prevent... (Read more)
- 1379. Appl. Phys. Lett. 79, 1834-1836 (2001) , “Fermi level dependence of hydrogen diffusivity in GaN”, A. Y. Polyakov and N. B. SmirnovHydrogen diffusion studies were performed in GaN samples with different Fermi level positions. It is shown that, at 350 °C, hydrogen diffusion is quite fast in heavily Mg doped p-type material with the Fermi level close to Ev + 0.15 eV, considerably slower in... (Read more)
- 1380. Appl. Phys. Lett. 79, 1631-1633 (2001) , “Current deep-level transient spectroscopy investigation of acceptor levels in Mg-doped GaN”, Yoshitaka Nakano and Tetsu KachiThe current deep-level transient spectroscopy (I-DLTS) technique was used to investigate acceptor levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy. For activation of the Mg dopants, rapid thermal annealing was performed with a SiO2 encapsulation layer at 850 °C... (Read more)
- 1381. Appl. Phys. Lett. 79, 1492-1494 (2001) , “Positron annihilation study of vacancy-like defects related to oxygen precipitates in Czochralski-type Si”, R. S. Brusa, W. Deng, G. P. Karwasz, and A. ZeccaWe report the direct measurement of vacancy-like defects related to oxygen in the oxygen precipitation process in Czochralski Si. The vacancy-like defects were detected by measuring the positron lifetime and narrowing of the positronelectron annihilation momentum distribution. Oxygen atoms... (Read more)
- 1382. Appl. Phys. Lett. 79, 1453-1455 (2001) , “Interstitial oxygen loss and the formation of thermal double donors in Si”, Young Joo Lee, J. von Boehm, and R. M. NieminenThe combination of first-principles total energy calculations and a general kinetic model, which takes into account all processes of association, dissociation, and restructuring, is used to study the kinetics of thermal double donors (TDDs) in silicon over the temperature range of 300650... (Read more)
- 1383. Appl. Phys. Lett. 79, 1273-1275 (2001) , “Binding energy of vacancy clusters generated by high-energy ion implantation and annealing of silicon”, V. C. Venezia, L. Pelaz, and H.-J. L. GossmannWe have measured the evolution of the excess-vacancy region created by a 2 MeV, 1016/cm2 Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700,... (Read more)
- 1384. Appl. Phys. Lett. 79, 1115-1117 (2001) , “Bulk diffusion of microwave plasma activated deuterium into undoped natural diamond”, A. Laikhtman and A. HoffmanIn the present work undoped natural (100)-, (111)-, and (110)-oriented diamonds were exposed to microwave deuterium plasma. Secondary ion mass spectroscopy (SIMS) in static mode showed that surface deuterium concentration is the highest for (110) surface and the lowest one for (100)-oriented... (Read more)
- 1385. Appl. Phys. Lett. 79, 1103-1105 (2001) , “Effects of boron-interstitial silicon clusters on interstitial supersaturation during postimplantation annealing”, S. Solmi, L. Mancini, S. Milita, and M. ServidoriBoron marker-layer structures have been used to investigate the effects of B doping on the evolution of the implantation damage and of the associated transient enhanced diffusion. The samples were damaged by Si implants at different doses in the range... (Read more)
- 1386. Appl. Phys. Lett. 79, 1094-1096 (2001) , “Origin of improved luminescence efficiency after annealing of Ga(In)NAs materials grown by molecular-beam epitaxy”, Wei Li and Markus PessaPositron-annihilation measurements and nuclear reaction analysis [utilizing the 14N(d,p)15N and 14N(d,He)12C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the... (Read more)
- 1387. Appl. Phys. Lett. 78, 949 (2001) , “Hole-trapping-related transients in shallow n+–p junctions fabricated in a high-energy boron-implanted p well”, A. Poyai, E. Simoen, and C. ClaeysThis letter describes a transient phenomenon in the reverse hole current of large-area shallow n+p-well junctions, giving rise to a hump at a specific reverse bias. This corresponds to a certain depletion depth in the retrograde p well, which has been fabricated... (Read more)
- 1388. Appl. Phys. Lett. 78, 913 (2001) , “Interaction of vacancies with interstitial oxygen in silicon”, R. A. Casali, H. Rücker, and M. MethfesselBased on first-principle total-energy calculations, we show that the majority of vacancies are trapped by interstitial oxygen in silicon wafers with a typical oxygen concentration of about 1018 cm3. Vacancies and interstitial oxygen form so called A centers with a binding... (Read more)
- 1389. Appl. Phys. Lett. 78, 907 (2001) , “Stacking fault effects in pure and n-type doped GaAs”, T. M. SchmidtUsing ab initio total-energy calculations, we investigate the effects of stacking faults on the properties of dopants in pure and n-type doped GaAs. We find that the Si impurity segregates towards a GaAs stacking fault. A Si atom at a Ga site in the stacking fault, in either a neutral... (Read more)
- 1390. Appl. Phys. Lett. 78, 736 (2001) , “Fast through-bond diffusion of nitrogen in silicon”, Peter A. Schultz and Jeffrey S. NelsonWe report first-principles total energy calculations of interaction of nitrogen in silicon with silicon self-interstitials. Substitutional nitrogen captures a silicon interstitial with 3.5 eV binding energy forming a 100" align="middle"> split interstitial ground-state geometry, with the nitrogen... (Read more)
- 1391. Appl. Phys. Lett. 78, 46 (2001) , “Pseudodonor nature of the DI defect in 4H-SiC”, L. Storasta, F. H. C. Carlsson, S. G. Sridhara, J. P. Bergman, A. Henry, T. Egilsson, A. Hallén, and E. JanzénWe use the recent findings about the pseudodonor character of the DI defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the... (Read more)
- 1392. Appl. Phys. Lett. 78, 446 (2001) , “Neutron transmutation of 10B isotope-doped diamond”, K. JagannadhamDiamond samples grown by microwave plasma chemical vapor deposition and doped with 10B have been irradiated under thermal neutron flux of 1013 cm2 s1 for 76 h to examine transmutation of 10B to 7Li and the attendant... (Read more)
- 1393. Appl. Phys. Lett. 78, 4142 (2001) , “Positron annihilation study of Pd contacts on impurity-doped GaN”, Jong-Lam Lee and Jong Kyu KimPd contacts on both n-type and p-type GaN were studied using positron annihilation spectroscopy, and the results were used to interpret the role of Ga vacancies on the band bending below the contacts. The concentration of Ga vacancy in Si-doped GaN was higher than that in the Mg-doped... (Read more)
- 1394. Appl. Phys. Lett. 78, 4043 (2001) , “Response to "Comment on `Reduction of interface-state density in 4H–SiC n-type metal–oxide–semiconductor structures using high-temperature hydrogen annealing' " [Appl. Phys. Lett. 78, 4043 (2001)]”, K. Fukuda, K. Arai, S. Suzuki, T. TanakaIn our letter, we suggested that the reduction of interface state density (Dit) is caused by the termination of Si and C dangling bonds with hydrogen.1 In a comment on our letter,2 Afanas'ev et al. argue that the Dit originates from carbon clusters at the... (Read more)
- 1395. Appl. Phys. Lett. 78, 3977 (2001) , “Theoretical study of sulfur–hydrogen–vacancy complex in diamond”, Takehide Miyazaki and Hideyo OkushiWe present an ab initio study of sulfur (S)hydrogen (H)vacancy (V) complexes in diamond. An SHV defect may become a much shallower donor than an isolated substitutional S defect when S in the complex is either three or five connected. Upon annealing the... (Read more)
- 1396. Appl. Phys. Lett. 78, 3818 (2001) , “Anomalous phosphorus diffusion in Si during post-implantation annealing”, Ryangsu Kim, Yoshikazu Furuta, Syunsuke Hayashi, Tetsuya Hirose, Toshihumi Shano, Hiroshi Tsuji, and Kenji TaniguchiThe transient behavior of P diffusion in Si implanted with As or Ge above the amorphizing threshold has been investigated. Annealing at 720 °C after Ge implantation induces extensive P segregation into the extended defect layer formed by implantation damage. This segregation is attributed to P... (Read more)
- 1397. Appl. Phys. Lett. 78, 3815 (2001) , “Characterization of electron-irradiated n-GaN”, S. A. Goodman, F. D. Auret, and M. J. LegodiUsing deep level transient spectroscopy, we have investigated the electron trap defects introduced in n-GaN grown using the epitaxial lateral overgrowth technique during high energy electron irradiation from a 90Sr radionuclide source. The results indicate that the major... (Read more)
- 1398. Appl. Phys. Lett. 78, 3812 (2001) , “Microscopic structure of hydrogen impurity in LiNbO3”, H. H. Nahm and C. H. ParkWe investigate the microscopic structures of interstitial and substitutional hydrogen impurities in LiNbO3 through the first-principles pseudopotential total-energy calculations. The interstitial hydrogen is located between two O atoms and bonds to one of the oxygen atoms. The hydrogen... (Read more)
- 1399. Appl. Phys. Lett. 78, 3633 (2001) , “Detection of two dangling bond centers with trigonal symmetry at and below a (100) Si/SiO2 interface”, B.Langhanki , S.Greulich-Weber , J-M.Spaeth , J.MichelUsing electrical detection of electron paramagnetic resonance (EDEPR), two defect centers located at the Si (100)/SiO2 interface and in regions several µm below the silicon surface have been observed at a low temperature. Improvements in the EDEPR measurement technique enabled the... (Read more)
- 1400. Appl. Phys. Lett. 78, 3442 (2001) , “Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation”, P. Pellegrino and P. LévêqueAn experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy... (Read more)
- 1401. Appl. Phys. Lett. 78, 332 (2001) , “Evolution of deep centers in GaN grown by hydride vapor phase epitaxy”, Z.-Q. Fang and D. C. LookDeep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety... (Read more)
- 1402. Appl. Phys. Lett. 78, 3217 (2001) , “Direct evidence for implanted Fe on substitutional Ga sites in GaN”, U. Wahl, A. Vantomme, and G. LangoucheThe lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of the precursor isotope 59Mn at a dose of 1.0×1013 cm2 and annealing up... (Read more)
- 1403. Appl. Phys. Lett. 78, 312 (2001) , “Acceptor activation of Mg-doped GaN by microwave treatment”, Shoou-Jinn Chang and Yan-Kuin SuA microwave treatment method different from thermal annealing and low-energy electron beam irradiation was proposed to activate Mg dopants in p-type GaN epitaxial layer. From photoluminescence spectra and Hall effect measurements, it was shown that microwave treatment is a very effective way... (Read more)
- 1404. Appl. Phys. Lett. 78, 3041 (2001) , “Yellow and green luminescence in a freestanding GaN template”, M. A. Reshchikov and H. MorkoçWe have studied a broad photoluminescence band in high-mobility freestanding 200-µm-thick GaN template prepared by hydride vapor-phase epitaxy. Variable-excitation intensity and energy experiments showed two defect-related bands: a yellow luminescence (YL) band at about 2.15 eV and a green... (Read more)
- 1405. Appl. Phys. Lett. 78, 291 (2001) , “Evidence for small interstitial clusters as the origin of photoluminescence W band in ion-implanted silicon”, P. K. GiriWe have investigated the origin of the photoluminescence (PL) W band in ion-implanted Si by studying the temperature evolution and depth profile of the related defects. Evolution of the PL spectra induced by postimplant annealing is correlated to a transition of small interstitial clusters to... (Read more)
- 1406. Appl. Phys. Lett. 78, 2908 (2001) , “Nitrogen deactivation by implantation-induced defects in 4H–SiC epitaxial layers”, D. Åberg, A. Hallén, P. Pellegrino, and B. G. SvenssonIon implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found... (Read more)
- 1407. Appl. Phys. Lett. 78, 2882 (2001) , “Transient photoluminescence of defect transitions in freestanding GaN”, M. A. Reshchikov and H. MorkoçDeep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN template were studied by transient photoluminescence. A nonexponential decay of PL intensity observed at low temperature is attributed to a donoracceptor pair recombination involving a shallow donor... (Read more)
- 1408. Appl. Phys. Lett. 78, 2843 (2001) , “Spins and microstructure of hydrogenated amorphous carbon: A multiple frequency electron paramagnetic resonance study”, H. J. von Bardeleben and J. L. CantinPolymer-like and diamond-like hydrogenated amorphous carbon films, characterized by high spin concentrations of 1020 cm3, have been studied by multiple frequency electron paramagnetic resonance (EPR) spectroscopy at 9, 35, and 94 GHz. Whereas the low-frequency... (Read more)
- 1409. Appl. Phys. Lett. 78, 2730 (2001) , “Structure and formation mechanism of the Ealpha[prime]" align="middle"> center in amorphous SiO2”, T. Uchino, M. Takahashi, and T. YokoWe provide a possible formation mechanism for one of the Si-related paramagnetic centers in amorphous silica, Ealpha[prime]" align="middle">, which is stable only below 200 K, on the basis of the quantum-chemical calculations. We show that the divalent Si defect can trap a... (Read more)
- 1410. Appl. Phys. Lett. 78, 2682 (2001) , “Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon”, B. Stritzker, M. Petravic, J. Wong-Leung, and J. S. WilliamsThe selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a... (Read more)
- 1411. Appl. Phys. Lett. 78, 2512 (2001) , “On the nature of the D1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy”, A. Fissel and W. RichterUndoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substrates by means of solid-source molecular-beam epitaxy. Hexagonal 4H and 6HSiC layers are grown homoepitaxially via step-controlled epitaxy, whereas the cubic 3CSiC is grown pseudomorphically via nucleation and... (Read more)
- 1412. Appl. Phys. Lett. 78, 2458 (2001) , “Residual arsenic site in oxidized AlxGa1–xAs (x = 0.96)”, S.-K. Cheong, B. A. Bunker, and T. ShibataX-ray absorption fine-structure spectroscopy is used to determine the site of residual As in wet-oxidized Al0.96Ga0.04As. In a ~0.5-µm-oxide film removed from its GaAs substrate, the remaining As atoms are found to be coordinated with oxygen in the form of... (Read more)
- 1413. Appl. Phys. Lett. 78, 2321 (2001) , “Retardation of boron diffusion in silicon by defect engineering”, Lin Shao, Xinming Lu, Xuemei Wang, Irene Rusakova, Jiarui Liu, and Wei-Kan ChuBy judiciously placing vacancy and interstitial defects at different depths, we are able to enhance or retard boron diffusion. This opens up a new approach for the formation of shallow P+n junction in silicon. After preimplantation with 50 or 500 keV Si + ions to... (Read more)
- 1414. Appl. Phys. Lett. 78, 231 (2001) , “Diffusion of implanted beryllium in silicon carbide studied by secondary ion mass spectrometry”, T. Henkel, Y. Tanaka, N. Kobayashi, and H. TanoueThe diffusion behavior of beryllium implanted in silicon carbide has been investigated by secondary ion mass spectrometry. The shape of the as implanted profile changed considerably after annealing at temperatures above 1300 °C due to redistribution processes. In addition, strong out diffusion... (Read more)
- 1415. Appl. Phys. Lett. 78, 2285 (2001) , “Photoluminescence and cathodoluminescence studies of stoichiometric and oxygen-deficient ZnO films”, X. L. WuPhotoluminescence and cathodoluminescence (CL) spectra of stoichiometric and oxygen-deficient ZnO films grown on sapphire were examined. It was found that the intensities of the green and yellow emissions depend on the width of the free-carrier depletion region at the particle surface; the thinner... (Read more)
- 1416. Appl. Phys. Lett. 78, 2178 (2001) , “Deep centers in a free-standing GaN layer”, Z.-Q. Fang and D. C. LookSchottky barrier diodes, on both Ga and N faces of a ~300-µm-thick free-standing GaN layer, grown by hydride vapor phase epitaxy (HVPE) on Al2O3 followed by laser separation, were studied by capacitancevoltage and deep level transient spectroscopy (DLTS)... (Read more)
- 1417. Appl. Phys. Lett. 78, 2000 (2001) , “Athermal annealing of low-energy boron implants in silicon”, D. W. Donnelly and B. C. CovingtonSilicon samples that have been ion implanted with boron at energies below 3 keV have been athermally annealed. The annealing process has been characterized using secondary ion mass spectrometry and infrared absorption spectroscopy. The athermally annealed samples show activation comparable to that... (Read more)
- 1418. Appl. Phys. Lett. 78, 1571 (2001) , “Hydrogen Passivation and Activation of Oxygen Complexes in Silicon”, S. N. Rashkeev, M. Di Ventra, and S. T. PantelidesWe report first-principles calculations in terms of which we describe the role of hydrogen in passivating or activating oxygen complexes in Si. In particular we find that attaching H to a pre-existing oxygen cluster can change the electric activity of the cluster. Furthermore, the addition of a... (Read more)
- 1419. Appl. Phys. Lett. 78, 1453-1454 (2001) , “Response to "Comment on `Do Pb1 centers have levels in the Si band gap? Spin-dependent recombination study of the Pb1 "hyperfine spectrum" ' " [Appl. Phys. Lett. 78, 1451 (2001)]”, Tetsuya D. Mishima and Patrick M. LenahanWe recently published a letter in which we utilized spin-dependent recombination (SDR) measurements to demonstrate that Pb1 centers, silicon dangling-bond defects at the (001) Si/SiO2 interface, have electronic levels in the silicon band gap.1 In their comment on our... (Read more)
- 1420. Appl. Phys. Lett. 78, 1309 (2001) , “Effect of photoelectrochemical oxidation on properties of GaN epilayers grown by molecular beam epitaxy”, D. J. Fu, T. W. Kang, Sh. U. Yuldashev, N. H. Kim, S. H. Park, and J. S. YunGaN epilayers grown by molecular beam epitaxy were photoelectrochemically (PEC) oxidized in an aqueous KOH solution. The oxidation effect was investigated by defect-related photoconductivity and photoluminescence. The PEC treated GaN show decreased extrinsic photoresponse and concentration of deep... (Read more)
- 1421. Appl. Phys. Lett. 78, 1246 (2001) , “Emission properties of an amorphous AlN:Cr3 + thin-film phosphor”, M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. RichardsonChromium-doped aluminum nitride (AlN:Cr) films were grown on p-doped silicon (111) by rf magnetron sputtering in a nitrogen atmosphere at a pressure of 104 Torr. Film thickness was typically 200 nm. After growth, the films were "activated" at ~1300 K for 30 min in a... (Read more)
- 1422. Appl. Phys. Lett. 78, 1234 (2001) , “Evidence for negatively charged vacancy defects in 6H-SiC after low-energy proton implantation”, D. T. Britton, M.-F. Barthe, C. Corbel, A. Hempel, L. Henry, and P. DesgardinWe have used pulsed-slow-positron-beam-based positron lifetime spectroscopy to investigate the nature of acceptors and charge states of vacancy-type defects in low-energy proton-implanted 6H-SiC(H). We can infer from the temperature dependence of the lifetime spectra that neutral and negatively... (Read more)
- 1423. Appl. Phys. Lett. 78, 117 (2001) , “Chemical vapor deposition of 4H–SiC epitaxial layers on porous SiC substrates”, M. MynbaevaEpitaxial 4HSiC layers were grown by chemical vapor deposition (CVD) on porous silicon carbide. Porous SiC substrates were fabricated by the formation of a 2 to 15 µm thick porous SiC layer on commercial off-axis 4HSiC substrates. The thickness of CVD grown layers was about 2.5... (Read more)
- 1424. Appl. Surf. Sci. 180, 308-314 (2001) , “The surface properties and photocatalytic activities of ZnO ultrafine particles”, Liqiang Jing, Zili Xu, Xiaojun Sun, Jing Shang and Weimin CaiWe prepared ZnO ultrafine particles (UFPs) by thermal decomposition of the precursor zinc carbonate hydroxide. The surface properties of the as-prepared particles were studied using TEM, XRD, BET, SPS, EPR, IR, and XPS. The surface contains active species such as oxygen deficiencies and hydroxyl... (Read more)
- 1425. Diamond Relat. Mater. 10, 580-584 (2001) , “Phosphorus site after CIRA implantation of type IIa diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy and R. KalishA set of type IIa diamond crystals was processed by cold implantation and rapid annealing at 1050°C ex situ annealing at 1400°C and investigated by ESR measurement. The ESR spectra of CIRA and post-annealed samples show an isotropic line at g=2.003, a set of anisotropic hyperfine lines,... (Read more)
- 1426. Diamond Relat. Mater. 10, 480-484 (2001) , “EPR study of preferential orientation of crystallites in N-doped high quality CVD diamond”, S. Nokhrin, J. Rosa, M. Vanecek, A. G. Badalyan and M. NesladekThe directions of preferential growth of free-standing optical-quality CVD diamond wafers have been investigated with the help of electron paramagnetic resonance (EPR). EPR signals of the well-known P1 centre (substitutional nitrogen) have been used as a probe. A computer simulation of EPR spectra... (Read more)
- 1427. Diamond Relat. Mater. 10, 434-438 (2001) , “Interstitial aggregates in diamond”, J. P. Goss, B. J. Coomer, R. Jones, T. D. Shaw, P. R. Briddon and S. ÖbergTheoretical modelling of magnetic resonance signals lead to convincing models for the first three self-interstitial aggregates in diamond. These in turn suggest the manner in which larger more stable aggregates including the platelet, observed in annealed type I diamonds, are formed. (Read more)
- 1428. Diamond Relat. Mater. 10, 1681-1683 (2001) , “EPR and optical imaging of the growth-sector dependence of radiation-damage defect production in synthetic diamond”, G. A. Watt, M. E. Newton and J. M. BakerEPR imaging data are presented for the distribution of single substitutional nitrogen (P1) in a synthetic diamond of mixed IIa/Ib character, and compared with the distribution of the di-001-split interstitial (R1) produced during an electron irradiation. Since the defects are localised in different... (Read more)
- 1429. J. Appl. Phys. 90, 824 (2001) , “Energetics of native defects in ZnO”, Fumiyasu Oba, Shigeto R. Nishitani, Seiji Isotani, and Hirohiko AdachiWe have investigated the formation energies and electronic structure of native defects in ZnO by a first-principles plane-wave pseudopotential method. When p-type conditions are assumed, the formation energies of donor-type defects can be quite low. The effect of self-compensation by the... (Read more)
- 1430. J. Appl. Phys. 90, 807 (2001) , “Photoluminescence characteristics of ZnTe epilayers”, Young-Moon Yu, Sungun Nam, and Ki-Seon LeeHigh quality ZnTe epilayers have been grown on semi-insulating GaAs(100) substrates by hot-wall epitaxy, and the photoluminescence characteristics were investigated. The free exciton binding energy is found to be 12.7 meV and the free exciton reduced mass to be 0.095m0 from the... (Read more)
- 1431. J. Appl. Phys. 90, 6526 (2001) , “Interaction of hydrogen with nitrogen interstitials in wurtzite GaN”, A. F. WrightFirst-principles techniques are used to investigate the interaction of hydrogen with nitrogen interstitials in wurtzite GaN. The calculations reveal that hydrogen can either compensate an interstitial by donating an electron to an interstitial acceptor level, or passivate the interstitial by forming... (Read more)
- 1432. J. Appl. Phys. 90, 6026-6031 (2001) , “Oxygen-Related Defects in Low-Dose Separation-by-Implanted Oxygen Wafers Probed by Monoenergetic Positron Beams”, A. Uedono, Z. Q. Chen, A. Ogura, H. Ono, R. Suzuki, T. Ohdaira, T. Mikado.The depth distributions of oxygen-related defects in separation-by-implanted oxygen wafers were determined from measurements of Doppler broadening spectra of the annihilation radiation. Vacanyoxygen complexes were introduced by implanting 180-keV oxygen at (26)×1017 ... (Read more)
- 1433. J. Appl. Phys. 90, 5946 (2001) , “Cr3 + (I) and Cr3 + (II) centers in alexandrite single crystal”, T. H. YeomNuclear magnetic resonance spectra of the 9Be and 27Al nuclei as well as electron paramagnetic resonance spectra of Cr3 + ion in an alexandrite single crystal (BeAl2O4:Cr) have been investigated by employing a pulse nuclear magnetic resonance... (Read more)
- 1434. J. Appl. Phys. 90, 5147 (2001) , “Effects of P doping on photoluminescence of Si1–xGex alloy nanocrystals embedded in SiO2 matrices: Improvement and degradation of luminescence efficiency”, Kimiaki Toshikiyo, Masakazu Tokunaga, and Shinji TakeokaThe effects of P doping on photoluminescence (PL) properties of Si1xGex alloy nanocrystals (nc-Si1xGex) in SiO2 thin films were studied. P doping drastically decreases the electron spin resonance (ESR)... (Read more)
- 1435. J. Appl. Phys. 90, 4293 (2001) , “Diffusion of ion-implanted boron in germanium”, Suresh Uppal and Arthur F. W. WilloughbyThe diffusion of boron (B) in germanium (Ge) is studied. B was introduced in Ge wafers by ion implantation, and concentration profiles after furnace annealing were obtained using secondary ion mass spectroscopy. The diffusion coefficient and solid solubility of B in Ge has been calculated to be... (Read more)
- 1436. J. Appl. Phys. 90, 3894 (2001) , “Origin of point defects in AgInS2/GaAs epilayer obtained from photoluminescence measurement”, S. H. You and K. J. HongThe AgInS2 epilayers with a chalcopyrite structure grown using a hot-wall epitaxy method have been confirmed to be a high quality crystal. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS2/GaAs was found to be... (Read more)
- 1437. J. Appl. Phys. 90, 3642 (2001) , “Nitrogen effect on self-interstitial generation in Czochralski silicon revealed by gold diffusion experiments”, A. L. Parakhonsky and E. B. YakimovGold diffusion in usual Czochralski (Cz) grown Si and in Cz Si doped with nitrogen during growth has been studied. The results presented can be explained under the assumption that the substitutional Aus concentration in the Cz Si samples is effected by the competition between the... (Read more)
- 1438. J. Appl. Phys. 90, 3405 (2001) , “Deep levels and their impact on generation current in Sn-doped InGaAsN”, R. J. Kaplar, A. R. Arehart, and S. A. RingelWe have investigated deep levels in 1.05 eV, Sn-doped, n-type In0.075Ga0.925As0.975N0.025 lattice-matched to GaAs. The samples were grown by metalorganic chemical vapor deposition. Capacitancevoltage measurements were used to determine... (Read more)
- 1439. J. Appl. Phys. 90, 3377 (2001) , “Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Weidner, G. Pensl, P. Sperr, H. ItohThe annealing behavior of defects in n-type 6H SiC epilayers irradiated with 2 MeV electrons have been studied using positron annihilation and deep level transient spectroscopy. Vacancy-type defects are annealed at 500700 °C and 12001400 °C. From the analysis of... (Read more)
- 1440. J. Appl. Phys. 90, 3038 (2001) , “Effect of gamma-ray irradiation on the characteristics of 6H silicon carbide metal-oxide-semiconductor field effect transistor with hydrogen-annealed gate oxide”, Takeshi Ohshima, Hisayoshi Itoh, and Masahito YoshikawaThe effects of gamma-ray (γ-ray) irradiation on the channel mobility of enhancement-type n-channel 6H silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) with gate oxides annealed in a hydrogen atmosphere after pyrogenic oxidation were studied. Irradiation... (Read more)
- 1441. J. Appl. Phys. 90, 2806 (2001) , “Trapping of gold by nanocavities induced by H+ or He++ implantation in float zone and Czochralski grown silicon wafers”, I. PérichaudIn silicon, implantation of He++ or H+ ions and subsequent annealing can lead to the formation of nanocavities below the implanted surface of the wafers. These nanocavities, which behave as trapping sites for metallic impurities, can be located near the devices in integrated... (Read more)
- 1442. J. Appl. Phys. 90, 2618 (2001) , “Anomalous behavior of Sb implanted Si after mega-electron-volt carbon irradiation”, Soma Dey and Shikha VarmaWe have investigated the dopant behavior of 1.5 MeV implanted Sb in Si(100) both prior to and following irradiation with 8 MeV C+ ions. The irradiation stimulates the regrowth in silicon lattice and induces a high Sb substitution of 93% after a thermal anneal of 400 °C. At higher... (Read more)
- 1443. J. Appl. Phys. 90, 237 (2001) , “Defects in 30 keV Er + -implanted SiO2/Si studied by positron annihilation and cathodoluminescence”, K. HirataDefects in SiO2 (48 nm)/Si induced by 30 keV Er ion implantation were studied by positron annihilation. Depth-selective information on defects for samples implanted with doses of 3.0×1014 and 1.5×1015 Er/cm2 was obtained by a variable-energy... (Read more)
- 1444. J. Appl. Phys. 90, 2252 (2001) , “Deep-level transient spectroscopy of dislocation-related defects in epitaxial multilayer structures”, E. Thor, M. Mühlberger, L. Palmetshofer, and F. SchäfflerDislocated Si, SiGe, SiC, and SiGeC n-type heterostructures, grown by molecular beam epitaxy, were characterized by capacitancevoltage profiling and deep-level transient spectroscopy. Exclusively dislocation-related defects were found in the different layers, which correspond to the... (Read more)
- 1445. J. Appl. Phys. 90, 1768 (2001) , “Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation”, Julie L. NgauRecent work has indicated that the suppression of boron transient enhanced diffusion (TED) in carbon-rich Si is caused by nonequilibrium Si point defect concentrations, specifically the undersaturation of Si self-interstitials, that result from the coupled out-diffusion of carbon interstitials via... (Read more)
- 1446. J. Appl. Phys. 90, 1179 (2001) , “Buried oxide and defects in oxygen implanted Si monitored by positron annihilation”, A. C. Kruseman, A. van Veen, H. Schut, and P. E. MijnarendsOne- and two-detector Doppler broadening measurements performed on low (~1014 to 1015 O + /cm2) and high dose (~1017 to 1018 O + /cm2) oxygen-irradiated Si using variable-energy slow positrons are analyzed in... (Read more)
- 1447. J. Appl. Phys. 90, 1170 (2001) , “Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells”, Aurangzeb Khan, Masafumi Yamaguchi, Y. Ohshita, N. Dharmarasu, and K. ArakiThe present extensive systematic study of defect introduction rates as a function of boron, gallium, oxygen, and carbon concentrations by means of deep level transient spectroscopy has drawn a quite complete picture towards the identification of the dominant radiation-induced defects in Si. The... (Read more)
- 1448. J. Appl. Phys. 90, 1164 (2001) , “Interaction of hydrogen with gallium vacancies in wurtzite GaN”, A. F. WrightFirst-principles techniques are used to investigate the interaction of hydrogen with gallium vacancies in wurtzite GaN. The calculations reveal that hydrogen can either compensate a vacancy by donating an electron to a vacancy acceptor level, or passivate the vacancy by forming a hydrogen-vacancy... (Read more)
- 1449. J. Appl. Phys. 89, 955 (2001) , “Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates”, Patricia J. Macfarlane and M. E. ZvanutWe have used electron paramagnetic resonance to study two intrinsic defects in oxidized epitaxial layers of 3C SiC, a potential substitute for Si in high speed, high power electronics. One center can be described by an isotropic g value of 2.0044. The defect is distinguished by a strong... (Read more)
- 1450. J. Appl. Phys. 89, 928 (2001) , “Investigation of two infrared bands at 1032 and 1043 cm–1 in neutron irradiated silicon”, C. A. Londos and L. G. FytrosWe report on infrared (IR) studies of defects in Czochralski-grown silicon (Cz-Si) subjected to fast neutron irradiation and subsequent thermal anneals. We focus mainly on the investigation of the VO4 defect which, in the literature, has been correlated with the pair of bands (1032 and... (Read more)
- 1451. J. Appl. Phys. 89, 86 (2001) , “Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP”, Y. W. Zhao, Y. L. Luo, S. Fung, and C. D. BelingUndoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, currentvoltage (IV), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying... (Read more)
- 1452. J. Appl. Phys. 89, 8345 (2001) , “High resolution measurement of the carbon localized vibrational mode in gallium arsenide”, Naoto NagaiThe localized vibrational mode of carbon substituted at arsenic sites in gallium arsenide (GaAs) was measured with infrared absorption spectroscopy at 0.005 cm1 resolution. Well-resolved fine structures were observed, yielding quantitative information on the line half widths and... (Read more)
- 1453. J. Appl. Phys. 89, 7932 (2001) , “Capture cross sections of the acceptor level of iron–boron pairs in p-type silicon by injection-level dependent lifetime measurements”, Daniel Macdonald and Andrés CuevasInjection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture cross sections of the acceptor level of ironboron pairs in silicon. The relative populations of... (Read more)
- 1454. J. Appl. Phys. 89, 7772 (2001) , “Observation of Fe-related defects in neutron irradiated semi-insulating InP”, B. Marí, M. A. Hernández-Fenollosa, and F. J. NavarroOptical absorption and positron lifetime measurements have been performed on Fe-doped semi-insulating InP single crystals irradiated with thermal neutrons in a wide dose range from 0.1 to 2.7×1017 n cm2. Two lifetimes were found: τ1 = 210 ps is... (Read more)
- 1455. J. Appl. Phys. 89, 6536 (2001) , “Optical transmission spectroscopy of semi-insulating GaAs substrate implanted by arsenic ions at different dosages”, Gong-Ru Lin and Chin-Chia HsuThe near infrared optical properties of arsenic ion-implanted GaAs (GaAs:As+) with different dosages are investigated using Fourier transform infrared spectroscopy. The band edge absorption coefficient and the band gap energy of GaAs:As+ increases from 6.2×103... (Read more)
- 1456. J. Appl. Phys. 89, 6294 (2001) , “Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy”, P. KrispinDeep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy are investigated by deep-level transient Fourier spectroscopy. Depth-resolved distributions of hole traps are measured in as-grown and annealed heterojunctions in order to identify the defects,... (Read more)
- 1457. J. Appl. Phys. 89, 6272 (2001) , “Evidence for shallow acceptors in GaN”, D. C. Reynolds, D. C. Look, and B. JogaiTwo low-temperature photoluminescence lines in GaN, in the region of energies commonly interpreted as longitudinal optical-phonon replicas of free excitons, donor-bound excitons, or acceptor-bound excitons, are reinterpreted as acceptor-bound excitons (A0X's) collapsing to... (Read more)
- 1458. J. Appl. Phys. 89, 6189 (2001) , “Fine structure on the green band in ZnO”, D. C. Reynolds, D. C. Look, and B. JogaiAn emission band at 2.4 eV, called the green band, is observed in most ZnO samples, no matter what growth technique is used. Sometimes this band includes fine structure, which consists mainly of doublets, repeated with a longitudinal-optical-phonon-energy spacing (72 meV). We have developed a... (Read more)
- 1459. J. Appl. Phys. 89, 6183 (2001) , “Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples”, T. Monteiro, J. Soares, and M. R. CorreiaEr-related luminescence near 1.54 µm (~805 meV) is observed under below band gap excitation at 4.2 K in GaN:Er and GaN:Er,O implanted samples. The spectrum of the recovered damage samples is a multiline structure. So far, these lines are the sharpest ones reported for GaN. Well-resolved green... (Read more)
- 1460. J. Appl. Phys. 89, 6105 (2001) , “Chemical vapor deposition and deep level analyses of 4H-SiC(110)”, Tsunenobu Kimoto, Toshiyuki Yamamoto, Zhi Ying Chen, Hiroshi Yano, and Hiroyuki MatsunamiSpecular 4H-SiC layers have been homoepitaxially grown on 4H-SiC(110), parallel to the c axis (0001" align="middle">), by chemical vapor deposition at 1500 °C. An x-ray diffraction analysis has revealed that a lattice-mismatch strain between n epilayers and... (Read more)
- 1461. J. Appl. Phys. 89, 61 (2001) , “Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities”, M. Satoh, Y. Nakaike, and K. KuriyamaThe substitutional site of the implanted Ga impurity in (100)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across 100" align="middle"> axial channels parallel to (110)... (Read more)
- 1462. J. Appl. Phys. 89, 6002 (2001) , “Weak hyperfine interaction of E centers in gamma and beta irradiated silica”, S. Agnello, R. Boscaino, and F. M. GelardiWe report on the effects of photon (γ) and electron (β) irradiation in a dose range extending from 100 to 5×109 Gy in a variety of silica samples studied by electron paramagnetic resonance. The E centers and a weak intensity satellite signal of their... (Read more)
- 1463. J. Appl. Phys. 89, 5997-6001 (2001) , “Oxygen Recoil Implant from SiO2 Layers into Single-Crystalline Silicon”, G. Wang, Y. Chen, D. Li, S. Oak, G. Srivastav, S. Banerjee, A. Tasch, P. Merrill, R. Bleiler.It is important to understand the distribution of recoil-implanted atoms and the impact on device performance when ion implantation is performed at a high dose through surface materials into single crystalline silicon. For example, in ultralarge scale integration impurity ions are often implanted... (Read more)
- 1464. J. Appl. Phys. 89, 5991 (2001) , “Charge states of divacancies in self-implanted doped Si”, S. Szpala and P. J. SimpsonThe charge states of divacancies induced by 5 MeV self-implantation of doped silicon were investigated by positron annihilation methods. For low doping concentrations, results were found to be in agreement with the predictions of Fermi statistics. For the case of heavily boron-doped silicon... (Read more)
- 1465. J. Appl. Phys. 89, 5961 (2001) , “Effect of C and B sequential implantation on the B acceptors in 4H–SiC”, Yoshitaka NakanoWe have systematically investigated the effect of C and B sequential coimplantation on B-related acceptors and deep levels in 4HSiC using thermal admittance spectroscopy. By increasing the concentration of coimplanted C, the density of deep levels decreased and was completely suppressed for a... (Read more)
- 1466. J. Appl. Phys. 89, 4917 (2001) , “Electron spin resonance study of defects in Si1–xGex alloy nanocrystals embedded in SiO2 matrices: Mechanism of luminescence quenching”, Kimiaki Toshikiyo, Masakazu Tokunaga, and Shinji TakeokaDangling bond defects in Si1xGex alloy nanocrystals (nc-Si1xGex) as small as 4 nm in diameter embedded in SiO2 thin films were studied by electron spin resonance (ESR), and the effects of the... (Read more)
- 1467. J. Appl. Phys. 89, 47 (2001) , “Identification of electron and hole traps in KH2PO4 crystals”, N. Y. Garces, K. T. Stevens, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH2PO4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a... (Read more)
- 1468. J. Appl. Phys. 89, 4625-4630 (2001) , “Hexagonal voids and the formation of micropipes during SiC sublimation growth”, Thomas A. Kuhr, Edward K. Sanchez, Marek Skowronski, William M. Vetter, Michael DudleyHexagonal voids observed in sublimation grown SiC boules were examined using optical microscopy, atomic force microscopy (AFM), scanning electron microscopy, KOH etching, and synchrotron white-beam x-ray topography. Voids formed at imperfections in the attachment layer between the seed and crucible... (Read more)
- 1469. J. Appl. Phys. 89, 4570 (2001) , “Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage”, Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Tada, Hiroshi Arimoto, and Kei HoriuchiWe demonstrated that ion-implantation damage in gate SiO2-enhanced boron penetration in p-channel metaloxidesemiconductor devices, easily enhances boron diffusion in SiO2 by ten times or more. This article describes the effectiveness of using high-temperature... (Read more)
- 1470. J. Appl. Phys. 89, 4470 (2001) , “Electron paramagnetic resonance studies of Mn2+ ions in β-Ga2O3 single crystal”, I. G. Kim, T. H. Yeom, and S. H. LeeA Mn2 + ion-doped β-Ga2O3 single crystal was grown by using a floating zone method. By employing an X-band electron paramagnetic resonance (EPR) spectrometer, Mn2 + EPR spectra were recorded at room temperature. The rotation patterns in the... (Read more)
- 1471. J. Appl. Phys. 89, 4407 (2001) , “Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy”, J. H. Kim, S. J. Jo, J. W. Kim, and J.-I. SongDeep levels in Si-doped In0.49Ga0.51P grown by compound-source molecular beam epitaxy (MBE) have been investigated by deep level transient spectroscopy. In0.49Ga0.51P samples were grown by compound-source MBE with V/III ratios of 4, 10, and 17. Depending... (Read more)
- 1472. J. Appl. Phys. 89, 4310 (2001) , “Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon”, P. K. GiriLow-temperature photoluminescence (PL) spectroscopy, in conjunction with transmission electron microscopy (TEM) and optical microscopy (OM) have been carried out to investigate the origin of radiative recombination from various extended defects that evolve during high-temperature processing of... (Read more)
- 1473. J. Appl. Phys. 89, 4301 (2001) , “Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals”, Katsuhiko Nakai, Yoshiharu Inoue, Hideki Yokota, Atsushi Ikari, Jun Takahashi, Akiyoshi Tachikawa, Kouichi Kitahara, Yasumitsu Ohta, and Wataru OhashiOxygen precipitate behavior of nitrogen-doped Czochralski-grown silicon (CZ-Si) crystals is investigated. It is found that nitrogen doping enhances oxygen precipitation after heat treatment. The oxygen precipitate volume density in nitrogen-doped crystals after heat treatment does not change... (Read more)
- 1474. J. Appl. Phys. 89, 4289 (2001) , “Shallow thermal donors in nitrogen-doped silicon”, V. V. Voronkov, M. Porrini, P. Collareta, M. G. Pretto, and R. ScalaSilicon crystals doped with nitrogen from the melt contain shallow thermal donors (STDs) detected both optically and electrically. Annealing samples at 600 and 650 °C results in a saturated STD concentration that depends on the nitrogen concentration approximately by a square-root law. This... (Read more)
- 1475. J. Appl. Phys. 89, 4263 (2001) , “Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP”, Aurangzeb Khan and Masafumi YamaguchiDirect recombination enhanced annealing of the radiation-induced defect H2 in p InGaP has been observed by deep level transient spectroscopy (DLTS). Detailed analysis of the annealing data at zero and reverse bias shows that annealing rates are independent of the defect charge state or this... (Read more)
- 1476. J. Appl. Phys. 89, 3606 (2001) , “A study of vacancy-type defects introduced by the carburization of Si by monoenergetic positron beams”, Akira Uedono, Makoto Muramatsu, and Tomohiro UbukataVacancy-type defects introduced by the carburization of Si were studied by means of monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation were measured for Si substrates with carbon films at temperatures between 298 and 1473 K. The line-shape parameter S,... (Read more)
- 1477. J. Appl. Phys. 89, 3195 (2001) , “Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment”, S. M. Myers, A. F. Wright, G. A. Petersen, W. R. Wampler, C. H. Seager, M. H. Crawford, and J. HanThe diffusion and release of H and its uptake from the gas phase are modeled for Mg-doped, wurtzite GaN using formation energies and vibration frequencies from the density-function theory. Comparison is made with rates of deuterium release and uptake measured by nuclear-reaction analysis of... (Read more)
- 1478. J. Appl. Phys. 89, 3156 (2001) , “Dependence of ion implantation: Induced defects on substrate doping”, Kei Kanemoto, Fuminobu Imaizumi, Tatsufumi Hamada, Yukio Tamai, and Akira NakadaThe characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of the substrate dopant species (phosphorus and... (Read more)
- 1479. J. Appl. Phys. 89, 1942 (2001) , “Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films”, W. K. Choi, L. P. Lee, S. L. Foo, S. Gangadharan, N. B. Chong, and L. S. TanAn oxidation study of plasma-enhanced chemical vapor deposited (PECVD) and rf sputtered hydrogenated amorphous silicon carbide (a-Si1xCx:H) films was carried out using the infrared (IR) and electron spin resonance (ESR) techniques.... (Read more)
- 1480. J. Appl. Phys. 89, 1713 (2001) , “Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization”, P. Stallinga and H. L. GomesElectrical measurements have been performed on poly[2-methoxy, 5 ethyl (2 hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included currentvoltage measurements, capacitancevoltage measurements, capacitancetransient spectroscopy, and admittance... (Read more)
- 1481. J. Appl. Phys. 89, 165 (2001) , “Thermodynamic analysis of hole trapping in SiO2 films on silicon”, G. Boureau, S. Carniato, and N. CapronA thermodynamic approach based on the existence of a local equilibrium is used to evaluate the temperature dependence of the number of defects responsible for hole trapping (oxygen vacancies transformed into E centers) near the SiSiO2 interface. This approach... (Read more)
- 1482. J. Appl. Phys. 89, 1070 (2001) , “Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN”, A. BellPhotoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the... (Read more)
- 1483. J. Phys.: Condens. Matter 13, L1-L7 (2001) , “Identification of the Tetra-Interstitial in Silicon”, B. J. Coomer, J. P. Goss, R. Jones, S. berg, P. R. Briddon.First-principles computational methods are employed to investigate the structural, vibrational, optical and electronic properties of the self-interstitial aggregate, I4 in silicon. We find the defect to be electrically active and identify it with the B3 EPR centre. We... (Read more)
- 1484. J. Phys.: Condens. Matter 13, 8957-8964 (2001) , “Determination of the W8 and AB5 defect levels in the diamond gap”, R. N. Pereira, W. Gehlhoff, N. A. Sobolev, A. J. Neves, D. BimbergElectron paramagnetic resonance (EPR) and photo-EPR investigations on synthetic diamond crystals have allowed an unambiguous determination of nickel-related defect levels in the diamond bandgap. Indirect photoinduced recharging of the nitrogen donor and detection of two... (Read more)
- 1485. J. Phys.: Condens. Matter 13, 6203-6231 (2001) , “Comprehensive ab initio study of properties of monovacancies and antisites in 4H-SiC”, L. Torpo, M. Marlo, T. E. M. Staab, R. M. NieminenWe present results of ab initio calculations for the electronic and atomic structures of monovacancies and antisite defects in 4H-SiC in all possible charge states. The calculations make use of a plane-wave pseudopotential method based on density-functional theory and the local spin-density... (Read more)
- 1486. J. Phys.: Condens. Matter 13, 2053-2060 (2001) , “Possible evidence of a copper-related electron paramagnetic resonance centre in diamond”, J. M. BakerThe EPR centre W36, found in natural type IIb diamond, has been previously attributed to a boron-related point defect, largely on account of its four line hyperfine structure attributed to 11B. The attribution has been re-examined, and no simple boron-related site has been found... (Read more)
- 1487. J. Phys.: Condens. Matter 13, 2045-2051 (2001) , “An annealing study of the R1 EPR centre (the neatest-neighbour di-<100>-split self-interstitial) in diamond”, D. J. Twitchen, M. E. Newton, J. M. Baker, T. R. Anthony, W. F. BanholzerResults are reported of both isochronal and isothermal annealing studies of the R1 EPR centre (known to be a pair of parallel nearest-neighbouring 100-split self-interstitials) produced by 2 MeV electron irradiation of synthetic type IIa diamonds of very low defect concentration before... (Read more)
- 1488. Jpn. J. Appl. Phys. 40, L1075 (2001) , “Formation of Buried Oxide Layer in Si Substrates by Oxygen Precipitation at Implantation Damage of Light Ions”, A. Ogura.We have developed a novel Si-on-insulator fabrication technique in which light ions, such as H+ and He+, are implanted into a Si substrate instead of O+ implantation in the SIMOX (separation by implanted oxygen) process. The atmospheric oxygen atoms... (Read more)
- 1489. Jpn. J. Appl. Phys. 40, 2840 (2001) , “Spin-Dependent Trap-Assisted Tunneling Current in Ultra-Thin Gate Dielectrics”,We have characterized the leakage current paths of ultra-thin gate dielectrics using spin-dependent tunneling (SDT) spectroscopy. A spin-dependent current was detected in metal-oxide-semiconductor diodes with chemical-vapor-deposition SiN gate films with thickness less than 3 nm. We examined the nature of the trap sites in terms of g-value, bias-dependent signal intensity, and magnetic-field orientation dependence. The main feature of the observed spectrum is attributed to a paramagnetic Si site in the SiN films. By using a quantitative model of electron spin-polarization, we were able to estimate the ratio of trap-assisted current to the total leakage current. (Read more)
- 1490. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 1491. Phys. Rev. B 64, 41307 (2001) , “Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures”, H. W. Jiang, Eli YablonovitchThe electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that... (Read more)
- 1492. Phys. Rev. B 64, 245212 (2001) , “Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair”, Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, H. OverhofWe investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing... (Read more)
- 1493. Phys. Rev. B 64, 245208 (2001) , “Ab initio and empirical-potential studies of defect properties in 3C-SiC”, Fei Gao, Eric J. Bylaska, William J. Weber, L. Ren CorralesDensity functional theory (DFT) is used to study the formation and properties of native defects in 3C-SiC. Extensive calculations have been carried out to determine the formation of point defects and the stability of self-interstitials. Although there is good agreement in the formation of vacancies... (Read more)
- 1494. Phys. Rev. B 64, 235202 (2001) , “Photosensitive electron paramagnetic resonance spectra in semi-insulating 4H SiC crystals”, E. N. Kalabukhova, S. N. Lukin, A. Saxler, W. C. Mitchel, S. R. Smith, J. S. Solomon, A. O. EvwarayePhotosensitive electron paramagnetic resonance (EPR) investigations of unintentionally doped, semi-insulating (s.i.) 4HSiC have been made at 37 GHz and 77 K including photoexcitation and photoquenching experiments. In the dark the EPR spectrum consists of a low intensity line due to boron on the... (Read more)
- 1495. Phys. Rev. B 64, 201308 (2001) , “Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure”, Chris Hillman, H. W. JiangElectrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be... (Read more)
- 1496. Phys. Rev. B 64, 195403 (2001) , “Intrinsic and H-induced defects at Si-SiO2 Interfaces”, D. J. ChadiDefect reactions pertaining to Si-SiO2 interfaces are investigated using a first-principles total-energy approach. Interesting results on the atomic structures of interstitial H+ and OH-, H2O, and H3O+ in SiO2 are... (Read more)
- 1497. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 1498. Phys. Rev. B 64, 085206 (2001) , “Electronic structure of the N donor center in 4H-SiC and 6H-SiC”, A. v. Duijn-Arnold, R. Zondervan, J. Schmidt, P. G. Baranov, E. N. MokhovIn this paper, we present high-frequency (95 GHz) pulsed electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) measurements on the nitrogen (N) donor in 4H-SiC (k site) and 6H-SiC (h, k1, and k2 sites according to the accepted classification). From... (Read more)
- 1499. Phys. Rev. B 64, 041201 (2001) , “Combined optical and microwave approach for performing quantum spin operations on the nitrogen-vacancy center in diamond”, Forrest T. Charnock and T. A. KennedyElectron spin echoes were performed on nitrogen-vacancy (N-V) centers in diamond using optical polarization and detection and 35 GHz microwave control. The experiments demonstrate an approach to quantum information in the solid state. A phase memory time of 3.6??s was measured, and coupling of the... (Read more)
- 1500. Phys. Rev. B 63, 245202 (2001) , “Ab initio density-functional supercell calculations of hydrogen defects in cubic SiC”, B. Aradi, A. Gali, P. Dek, J. E. Lowther, N. T. Son, E. Janzn, W. J. ChoykeBased on ab initio density-functional calculations in supercells of 3C-SiC, the stable configurations of hydrogen and dihydrogen defects have been established. The calculated formation energies are used to give semiquantitative estimates for the concentration of hydrogen in SiC after chemical vapor... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)