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- 451. J. Appl. Phys. 100, 023539 (2006) , “Mechanisms for the activation of ion-implanted Fe in InP”, T. Cesca, A. Verna, G. Mattei, A. Gasparotto, B. Fraboni, G. Impellizzeri, and F. PrioloIn this paper we present structural and electrical investigations on high temperature Fe-implanted InP. The aim of the work is to relate the lattice position of the implanted atoms after annealing treatments (from 300 to 600 °C) with their electrical activation as compensating deep traps and... (Read more)
- 452. J. Appl. Phys. 100, 023531 (2006) , “Lattice site location and annealing behavior of implanted Ca and Sr in GaN”, B. De Vries, A. Vantomme, U. Wahl, J. G. Correia, J. P. Araújo, W. Lojkowski, and D. KolesnikovWe report on the lattice location of ion-implanted Ca and Sr in thin films of single-crystalline wurtzite GaN. Using the emission channeling technique the angular distributions of particles emitted by the radioactive isotopes 45Ca (t1/2=163.8 d) and... (Read more)
- 453. J. Appl. Phys. 100, 023529 (2006) , “Visible and near-infrared photoluminescences of europium-doped titania film”, C. W. Jia, E. Q. Xie, J. G. Zhao, Z. W. Sun, and A. H. PengEu3+-doped TiO2 films were prepared on silicon substrates by sol-gel method. Anatase and rutile phases appear when the samples were heat treated in oxygen atmosphere at 500 and 900 °C, respectively. Photoluminescence (PL) properties were investigated under the excitation... (Read more)
- 454. J. Appl. Phys. 100, 023525 (2006) , “Evolution of erbium lattice locations in silicon: Effects of thermal annealing and codoped impurities (carbon, nitrogen, oxygen, and fluorine)”, X. T. Ren and M. B. HuangThe effects of thermal annealing and codoped impurities including carbon, nitrogen, oxygen, and fluorine, on the occupation of erbium lattice locations in Si, have been investigated in detail. Ion channeling measurements indicate that ion-implanted Er can mainly occupy two distinct lattice locations... (Read more)
- 455. J. Appl. Phys. 100, 023523 (2006) , “Defects and phase distribution in epitaxial ZnMnSe layers analyzed by transmission electron microscopy”, D. Litvinov, D. Gerthsen, B. Daniel, C. Klingshirn, and M. HetterichOur work is concerned with the occurrence and distribution of the sphalerite, wurtzite, and rocksalt phases, which can be present in the ZnMnSe system, and the analysis of structural defects. For this purpose, ZnMnSe layers with thicknesses between 700 and 1000 nm and Mn concentrations of 0%, 4%,... (Read more)
- 456. J. Appl. Phys. 100, 023512 (2006) , “Stacking faults and twin boundaries in fcc crystals determined by x-ray diffraction profile analysis”, Levente Balogh, Gábor Ribárik, and Tamás UngárA systematic procedure is developed to evaluate the density of planar defects together with dislocations and crystallite or subgrain size by x-ray line profile analysis in fcc crystals. Powder diffraction patterns are numerically calculated by using the DIFFAX software for intrinsic and extrinsic... (Read more)
- 457. J. Appl. Phys. 100, 023509 (2006) , “Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography”, C. Díaz-Guerra, J. Piqueras, O. Volciuc, V. Popa, and I. M. TiginyanuCathodoluminescence (CL) microscopy and spectroscopy have been used to investigate the optical properties of GaN microstructures patterned by Ar+ ion irradiation and subsequent photoelectrochemical (PEC) etching. Monochromatic CL images and CL spectra reveal an enhancement of several... (Read more)
- 458. J. Appl. Phys. 100, 023109 (2006) , “Exciton fine structure and biexciton binding energy in single self-assembled InAs/AlAs quantum dots”, D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Becker, R. J. Haug, and K. PierzThe exciton and biexciton emissions of a series of single quantum dots of InAs in an AlAs matrix have been studied. These emissions consist of linear cross polarized doublets showing large values of both the biexciton binding energy and the fine-structure splitting. At increasing exciton emission... (Read more)
- 459. J. Appl. Phys. 100, 013706 (2006) , “Distributions of self-trapped hole continuums in silica glass”, R. P. Wang, K. Saito, and A. J. IkushimaPhotobleaching of self-trapped holes (STH) in low temperature UV-irradiated silica glass has been investigated by the electron spin resonance method. The bleaching time dependence of the decay of two kinds of STH, STH1, and STH2, could be well fitted by the stretched... (Read more)
- 460. J. Appl. Phys. 100, 013521 (2006) , “Phonon and vibrational spectra of hydrogenated CdTe”, J. Polit, E. M. Sheregii, J. Cebulski, B. V. Robouch, A. Marcelli, M. Cestelli Guidi, M. Piccinini, A. Kisiel, P. Zajdel, E. Burattini, and A. MycielskiThis work presents far-infrared reflectivity spectra collected with synchrotron radiation on specially prepared CdTe monocrystals in the temperature region of 30300 K. The investigated samples were of three different types characterized by the three different levels of... (Read more)
- 461. J. Appl. Phys. 100, 013518 (2006) , “Photoluminescence analysis on the indium doped Cd0.9Zn0.1Te crystal”, Qiang Li, Wanqi Jie, Li Fu, Ge Yang, Gangqiang Zha, Tao Wang, and Dongmei ZengPhotoluminescence spectra are used to characterize high resistivity of In-doped CdZnTe crystal. Shallow level donor-acceptor pair (DAPs) peak at 1.6014 eV is found due to shallow donor and acceptor compensation related defects, which forms the... (Read more)
- 462. J. Appl. Phys. 100, 013501 (2006) , “Contactless electromodulation spectroscopy of AlGaN/GaN heterostructures with a two-dimensional electron gas: A comparison of photoreflectance and contactless electroreflectance”, R. Kudrawiec, M. Syperek, M. Motyka, J. Misiewicz, R. Paszkiewicz, B. Paszkiewicz, M. T?acza?aPhotoreflectance (PR) and contactless electroreflectance (CER) spectroscopies have been applied to study optical transitions in undoped and Si-doped AlGaN/GaN heterostructures at room temperature. Spectral features related to excitonic and band-to-band absorptions in GaN layer and band-to-band... (Read more)
- 463. J. Appl. Phys. 99, 124105 (2006) , “Hydrogen-implant-induced polarization loss and recovery in IrO2/Pb(Zr,Ti)O3/Pt capacitors”, J. S. Cross, K. Kurihara, I. Sakaguchi, and H. HanedaHydrogen was implanted into IrO2 (200 nm)/Pb(Zr,Ti)O3/Pt thin film capacitors at 26 keV with a flux of 2×1015 H+ ions/cm2 and also implanted at 20 keV with a flux of 1×1015 H+ ions/cm2 into... (Read more)
- 464. J. Appl. Phys. 99, 123717 (2006) , “Identification of sulfur double donors in 4H-, 6H-, and 3C-silicon carbide”, S. A. Reshanov, G. Pensl, H. Nagasawa, and A. SchönerSulfur ions are implanted into 6H-, 4H-, and 3C-SiC. Admittance and double correlated deep level transient spectroscopy investigations reveal that S atoms form double donors in SiC, which reside on lattice sites. The number of double donors observed corresponds to the number of... (Read more)
- 465. J. Appl. Phys. 99, 123515 (2006) , “Raman spectroscopy of (Mn, Co)-codoped ZnO films”, C. L. Du, Z. B. Gu, M. H. Lu, J. Wang, S. T. Zhang, J. Zhao, G. X. Cheng, H. Heng, and Y. F. ChenRaman spectra of (Mn, Co)-codoped ZnO films were investigated as functions of laser line and temperature. It is shown that the Raman shifts for different phonon modes exhibit redshift with temperature increasing, which can be attributed to the anharmonic effect in the material. Strong resonant Raman... (Read more)
- 466. J. Appl. Phys. 99, 123514 (2006) , “Study of the annealing kinetic effect and implantation energy on phosphorus-implanted silicon wafers using spectroscopic ellipsometry”, Emmanouil Lioudakis, Constantinos Christofides, and Andreas OthonosIn this work, we have studied the changes in the optical properties on crystalline silicon implanted wafers (1×10131×1016 P+/cm2) using an extensive ellipsometric analysis. The effects of implantation energy (20180 KeV) and... (Read more)
- 467. J. Appl. Phys. 99, 123501 (2006) , “Thermal annealing study of swift heavy-ion irradiated zirconia”, Jean-Marc Costantini, Andrée Kahn-Harari, François Beuneu, and François CouvreurSintered samples of monoclinic zirconia (-ZrO2) have been irradiated at room temperature with 6.0 GeV Pb ions in the electronic slowing down regime. X-ray diffraction (XRD) and micro-Raman spectroscopy measurements showed unambiguously that a transition to the "metastable"... (Read more)
- 468. J. Appl. Phys. 99, 114514 (2006) , “Pinholelike defects in multistack 1.3 µm InAs quantum dot laser”, Wei-Sheng Liu, Holin Chang, Yu-Shen Liu, and Jen-Inn ChyiThe pinholelike defects often observed in multistack InAs quantum dot structures on GaAs have been investigated comprehensively. Due to the high surface stress of InAs quantum dots, the overgrowth of GaAs and InGaAs capping layers on InAs quantum dots is far from conformal and leads to the formation... (Read more)
- 469. J. Appl. Phys. 99, 114509 (2006) , “Influence of residual oxygen impurity in quaternary InAlGaN multiple-quantum-well active layers on emission efficiency of ultraviolet light-emitting diodes on GaN substrates”, Takashi Kyono, Hideki Hirayama, Katsushi Akita, Takao Nakamura, Masahiro Adachi, and Koshi AndoThe influence of residual impurities in quaternary InAlGaN active layers on the emission efficiency of 350 nm band ultraviolet light-emitting diodes on GaN substrates has been investigated. Secondary ion mass spectrometry and capacitance-voltage measurements have revealed that a large amount of... (Read more)
- 470. J. Appl. Phys. 99, 113531 (2006) , “High spatial resolution mapping of partially strain-compensated SiGe:C films in the presence of postannealed defects”, A. V. Darahanau, A. Benci, A. Y. Nikulin, J. Etheridge, J. Hester, and P. ZaumseilAn experimental-analytical technique for the model-independent nondestructive characterization of single-crystal alloys is applied to partially strain-compensated SiGe:C/Si single layer structures with high concentrations of Ge. The studies were performed on pre- and postannealed SiGe:C/Si samples.... (Read more)
- 471. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 472. J. Appl. Phys. 99, 113516 (2006) , “Investigation of the indium-boron interaction in silicon”, S. Scalese, S. Grasso, M. Italia, V. Privitera, J. S. Christensen, and B. G. SvenssonThe interaction between indium and boron coimplanted in silicon has been investigated. In particular, the effects of the coimplantation on the diffusion and the electrical activation have been studied in comparison with the single B or In implanted samples. It is shown that, by means of... (Read more)
- 473. J. Appl. Phys. 99, 113507 (2006) , “Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon”, D. Babonneau, M.-F. Beaufort, A. Declémy, J.-F. Barbot, and J.-P. SimonThe formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50 keV, 7.1015 cm2) in the temperature range of 100550 °C has been investigated by grazing incidence small-angle... (Read more)
- 474. J. Appl. Phys. 99, 113506 (2006) , “Theoretical properties of the N vacancy in p-type GaN(Mg,H) at elevated temperatures”, S. M. Myers, A. F. Wright, M. Sanati, and S. K. EstreicherThe elevated-temperature properties of the N vacancy in Mg-doped, p-type GaN containing H were modeled using atomic-configuration energies and phonon densities of states obtained with density-functional theory. This study encompassed both equilibrium thermodynamics and the rates of diffusion... (Read more)
- 475. J. Appl. Phys. 99, 104906 (2006) , “An x-ray topographic study of diamond anvils: Correlation between defects and helium diffusion”, Agnès Dewaele, Paul Loubeyre, and Ramesh AndréX-ray topographic images of several dozens of diamonds have been recorded before and after their use as anvils in a diamond anvil high pressure cell. The aim of this study is to better understand and prevent the breakage of diamond anvils when they are used in contact with a helium sample. Indeed,... (Read more)
- 476. J. Appl. Phys. 99, 104305 (2006) , “Optical activation of Eu ions in nanoporous GaN films”, A. P. Vajpeyi, S. Tripathy, L. S. Wang, B. C. Foo, S. J. Chua, E. A. Fitzgerald, and E. AlvesA systematic optical activation study of Eu-implanted nanoporous GaN films has been carried out as a function of ion dose and annealing temperature. The nanoporous GaN films are prepared by photoelectrochemical etching of n-type GaN films in HF-based electrolyte. Eu ions are implanted in both... (Read more)
- 477. J. Appl. Phys. 99, 103905 (2006) , “Effect of Mn+ ion implantation on the Raman spectra of ZnO”, Hongmei Zhong, Jinbing Wang, Xiaoshuang Chen, Zhifeng Li, Wenlan Xu, and Wei LuRaman measurements have been performed on ZnO bulk materials implanted with 220 keV Mn+ ions with various doses from 1015 to 1017 cm2. The results reveal two modes at about 230 and 523 cm1, respectively, which are not observed in... (Read more)
- 478. J. Appl. Phys. 99, 103510 (2006) , “Fluorine in preamorphized Si: Point defect engineering and control of dopant diffusion”, G. Impellizzeri, S. Mirabella, F. Priolo, E. Napolitani, and A. CarneraWhile it is known that F modifies dopant diffusion in crystalline Si, the physical mechanisms behind this process are still unclear. In this work we report experimental studies about the F control of the point defect density in preamorphized Si layers. These studies put the basis for the... (Read more)
- 479. J. Appl. Phys. 99, 103509 (2006) , “X-ray scattering study of hydrogen implantation in silicon”, Nicolas Sousbie, Luciana Capello, Joël Eymery, François Rieutord, and Chrystelle LagaheThe effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A... (Read more)
- 480. J. Appl. Phys. 99, 103507 (2006) , “Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2/Si interfaces”, D. Skarlatos, P. Tsouroutas, V. Em. Vamvakas, and C. TsamisIn this work we perform a systematic study of the dissolution of a dislocation loop layer under the influence of inert SiO2/Si and nitrogen-rich SiO2/Si interfaces. The composition of the dislocation loop layer was just after its formation 10%20% Frank dislocation loops... (Read more)
- 481. J. Appl. Phys. 99, 103502 (2006) , “Correlation of Mn local structure and photoluminescence from CdS:Mn nanoparticles”, Huijuan Zhou, Detlev M. Hofmann, Helder R. Alves, and Bruno K. MeyerThe structure and luminescence properties of Mn2+ in CdS nanoparticles are studied. Electron paramagnetic resonance measurements show the existence of three distinct Mn2+ centers with different local structures in CdS nanocrystals: Mn ions substitutionally incorporated on Cd... (Read more)
- 482. J. Appl. Phys. 99, 103102 (2006) , “Electroluminescence properties of the Gd3+ ultraviolet luminescent centers in SiO2 gate oxide layers”, J. M. Sun, S. Prucnal, W. Skorupa, T. Dekorsy, A. Müchlich, M. Helm, L. Rebohle, and T. GebelElectroluminescence (EL) properties in the ultraviolet (UV) range were studied on Gd-implanted indium tin oxide/SiO2:Gd/Si metal-oxide-semiconductor light emitting devices. The efficient UV line at 316 nm from Gd3+ centers shows a maximum power density of 2 mW/cm2... (Read more)
- 483. J. Appl. Phys. 99, 093706 (2006) , “Thermal donors formation via isothermal annealing in magnetic Czochralski high resistivity silicon”, Mara Bruzzi, David Menichelli, Monica Scaringella, Jaakko Härkönen, Esa Tuovinen, and Zheng LiA quantitative study about the thermal activation of oxygen related thermal donors in high resistivity p-type magnetic Czochralski silicon has been carried out. Thermal donor formation has been performed through isothermal annealing at 430 °C up to a total time of 120 min. Space charge... (Read more)
- 484. J. Appl. Phys. 99, 093511 (2006) , “Primary photoluminescence in as-neutron (electron) -irradiated n-type 6H-SiC”, Z. Q. Zhong, D. X. Wu, M. Gong, O. Wang, S. L. Shi, S. J. Xu, X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, G. Brauer, W. Anwand, and W. SkorupaLow-temperature photoluminescence spectroscopy has revealed a series of features labeled S1, S2, S3 in n-type 6H-SiC after neutron and electron irradiation. Thermal annealing studies showed that the defects S1,... (Read more)
- 485. J. Appl. Phys. 99, 093509 (2006) , “Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing”, A. Bentzen, A. Holt, R. Kopecek, G. Stokkan, J. S. Christensen, and B. G. SvenssonWe have investigated the gettering of transition metals in multicrystalline silicon wafers during a phosphorus emitter diffusion for solar cell processing. The results show that mainly regions of high initial recombination lifetime exhibit a significant lifetime enhancement upon phosphorus diffusion... (Read more)
- 486. J. Appl. Phys. 99, 093507 (2006) , “Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species”, Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. NaramotoZnO single crystals implanted with O+ and B+ ions were studied by positron annihilation and Raman scattering measurements. Positron annihilation results show that vacancy clusters are generated by implantation. For the B+-implanted sample, the vacancy clusters have a... (Read more)
- 487. J. Appl. Phys. 99, 093505 (2006) , “Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects”, S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, and M. KawasakiThe internal quantum efficiency (int) of the near-band-edge (NBE) excitonic photoluminescence (PL) in ZnO epilayers was significantly improved by eliminating point defects, as well as by the use of ZnO high-temperature-annealed self-buffer layer (HITAB) on a ScAlMgO4 substrate... (Read more)
- 488. J. Appl. Phys. 99, 093108 (2006) , “Extremely high quantum efficiency of donor-acceptor-pair emission in N-and-B-doped 6H-SiC”, S. Kamiyama, T. Maeda, Y. Nakamura, M. Iwaya, H. Amano, I. Akasaki, H. Kinoshita, T. Furusho, M. Yoshimoto, T. Kimoto, J. Suda, A. Henry, I. G. Ivanov, J. P. Bergman, B. Monemar, T. Onuma, and S. F. ChichibuHigh-efficiency visible light emission in N-and-B-doped 6H-SiC epilayers was observed in photoluminescence measurements at room temperature. The orange-yellow light emission due to the recombination of donor-acceptor pairs (DAPs) has a broad spectrum with a peak wavelength of 576 nm and a... (Read more)
- 489. J. Appl. Phys. 99, 083510 (2006) , “Capture barrier for DX centers in gallium doped Cd1–xMnxTe”, Ewa Placzek-Popko, Anna Nowak, Jan Szatkowski, and Kazimierz SieranskiWe report on the capture barrier for the gallium related DX center in Cd0.99Mn0.01Te. In order to determine the barrier height, two methods were applied: an analysis of the persistent photoconductivity decay and the optical deep level transient spectroscopy... (Read more)
- 490. J. Appl. Phys. 99, 073709 (2006) , “Optical and electron paramagnetic resonance spectroscopies of diffusion-doped Co2+:ZnSe”, Ming Luo, N. Y. Garces, N. C. Giles, Utpal N. Roy, Yunlong Cui, and Arnold BurgerThe efficacy of diffusing cobalt into window-grade polycrystalline ZnSe during high-temperature anneals has been studied. Absorption, photoluminescence (PL), time-resolved PL, and electron paramagnetic resonance (EPR) were used to characterize samples with cobalt concentrations ranging from... (Read more)
- 491. J. Appl. Phys. 99, 073517 (2006) , “Magnetophotoluminescence of Zn0.88Mn0.12Se grown by metal-organic chemical vapor deposition on GaAs substrates”, S. L. Lu, D. S. Jiang, J. M. Dai, C. L. Yang, H. T. He, W. K. Ge, J. N. Wang, K. Chang, J. Y. Zhang, and D. Z. ShenMagnetophotoluminescence properties of Zn0.88Mn0.12Se thin films grown by metal-organic chemical vapor deposition on GaAs substrates are investigated in fields up to 10 T. The linewidth of the excitonic luminescence peaks decreases with the increasing magnetic field (<1 ... (Read more)
- 492. J. Appl. Phys. 99, 073511 (2006) , “Effects of temperature and flux on oxygen bubble formation in Li borosilicate glass under electron beam irradiation”, Nadège Ollier, Giancarlo Rizza, Bruno Boizot, and Guillaume PetiteOxygen bubble formation and evolution under a 300 keV electron beam are analyzed in a Li borosilicate glass under different irradiation conditions: temperature, flux, and dose. Oxygen bubbles are observed to form in a delimited flux and temperature region with a threshold requirement. This region... (Read more)
- 493. J. Appl. Phys. 99, 066105 (2006) , “Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy”, F. Tuomisto, K. Saarinen, T. Paskova, B. Monemar, M. Bockowski, and T. SuskiWe have used positron annihilation spectroscopy to study the thermal behavior of different native vacancy defects typical of freestanding GaN grown by hydride vapor phase epitaxy under high pressure annealing at different annealing temperatures. The results show that the... (Read more)
- 494. J. Appl. Phys. 99, 066102 (2006) , “Photoluminescence of wurtzite ZnO under hydrostatic pressure”, S. J. Chen, Y. C. Liu, C. L. Shao, C. S. Xu, Y. X. Liu, L. Wang, B. B. Liu, and G. T. ZouPhotoluminescence (PL) spectra of single-crystal ZnO bulk under hydrostatic pressure are studied using the diamond-anvil-cell technique at room temperature. The PL spectrum of ZnO single crystal taken at atmospheric pressure was dominated by a strong near-band-edge exciton emission. The emission... (Read more)
- 495. J. Appl. Phys. 99, 064502 (2006) , “High concentration in-diffusion of phosphorus in Si from a spray-on source”, A. Bentzen, A. Holt, J. S. Christensen, and B. G. SvenssonHigh concentration in-diffusion of phosphorus in both Czochralski grown and solar grade multicrystalline Si from a spray-on liquid source has been studied by secondary ion mass spectrometry and electrochemical capacitance-voltage profiling. By extraction of the concentration dependent effective... (Read more)
- 496. J. Appl. Phys. 99, 064501 (2006) , “Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors”, Yixin Li, Larry E. Antonuk, Youcef El-Mohri, Qihua Zhao, Hong Du, Amit Sawant, and Yi WangThe effects of x-ray irradiation on the transfer and noise characteristics of excimer-laser-annealed polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been examined at dose levels up to 1000 Gy. Parameters including mobility, threshold voltage, subthreshold swing, and leakage... (Read more)
- 497. J. Appl. Phys. 99, 063709 (2006) , “Intrinsic exciton transitions in high-quality ZnO thin films grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates”, X. Q. Zhang, Z. G. Yao, S. H. Huang, Ikuo Suemune, and H. KumanoHigh-quality ZnO thin films have been grown by plasma-enhanced molecular-beam epitaxy on sapphire substrates. Free-exciton absorption and exciton-LO phonon absorption peaks are observed in the films at room temperature, indicating that the exciton states are stable even at room temperature. Three... (Read more)
- 498. J. Appl. Phys. 99, 063513 (2006) , “Superscrew dislocations in silicon carbide: Dissociation, aggregation, and formation”, Xianyun MaAn approach to precisely determine the magnitude and the sign of Burgers vectors of superscrew dislocations (including elementary screw dislocations and micropipes) in silicon carbide (SiC) single crystals has been developed. The histogram of Burgers vector values associated with micropipes follows... (Read more)
- 499. J. Appl. Phys. 99, 063509 (2006) , “On the origin of the Staebler-Wronski effect”, Thomas KrügerThe parametrization of our recently proposed model of the Staebler-Wronski effect (SWE) is improved, which leads to an even better agreement with the experimental photoconductivity of light-soaked a-Si:H. The numerical solution of the essential equation exhibits well the typical SWE behavior,... (Read more)
- 500. J. Appl. Phys. 99, 054507 (2006) , “Characterization of HfSiON gate dielectrics using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, N. Umezawa, A. Hamid, T. Chikyow, T. Ohdaira M. Muramatsu, R. Suzuki, S. Inumiya, S. Kamiyama, Y. Akasaka, Y. Nara, and K. YamadaThe impact of nitridation on open volumes in thin HfSiOx films fabricated on Si substrates by atomic layer deposition was studied using monoenergetic positron beams. For HfSiOx, positrons were found to annihilate from the trapped state due to open volumes which... (Read more)
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