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- 401. J. Appl. Phys. 100, 093716 (2006) , “Determination of capture cross sections for as-grown electron traps in HfO2/HfSiO stacks”, C. Z. Zhao, J. F. Zhang, M. B. Zahid, B. Govoreanu, G. Groeseneken, and S. De GendtA major challenge for replacing gate SiON with HfO2 is the instability and reliability of HfO2. Unlike the SiON, there can be substantial amount of as-grown electron traps in HfO2. These traps can cause instability in the threshold voltage and contribute to the... (Read more)
- 402. J. Appl. Phys. 100, 093715 (2006) , “Fermi level pinning in heavily neutron-irradiated GaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, K. D. Shcherbatchev, V. T. Bublik, M. I. Voronova, I-H. Lee, C. R. Lee, S. J. Pearton, A. Dabirian, and A. V. OsinskyUndoped n-GaN grown by two different metallorganic chemical vapor deposition (MOCVD) techniques, standard MOCVD and epitaxial lateral overgrowth, and Mg-doped p-GaN prepared by hydride vapor phase epitaxy and molecular beam epitaxy were irradiated with fast reactor neutrons to the high... (Read more)
- 403. J. Appl. Phys. 100, 093708 (2006) , “Effect of dislocations on open circuit voltage in crystalline silicon solar cells”, Thomas Kieliba, Stephan Riepe, and Wilhelm WartaThe dislocation dependence of open circuit voltage is studied based on Donolato's model for the effect of dislocations on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. Experimental data measured on thin-film solar cells show a strong decrease of open circuit... (Read more)
- 404. J. Appl. Phys. 100, 093518 (2006) , “Interaction of micropipes with foreign polytype inclusions in SiC”, M. Yu. Gutkin, A. G. Sheinerman, T. S. Argunova, J. M. Yi, M. U. Kim, J. H. Je, S. S. Nagalyuk, E. N. Mokhov, G. Margaritondo, and Y. HwuSynchrotron phase sensitive radiography, optical and scanning electron microscopies, and color photoluminescence have been used to study the interaction of micropipes with foreign polytype inclusions in 4H-SiC bulk crystals grown on 6H-SiC substrates. This combination of techniques... (Read more)
- 405. J. Appl. Phys. 100, 093507 (2006) , “A view of the implanted SiC damage by Rutherford backscattering spectroscopy, spectroscopic ellipsometry, and transmission electron microscopy”, G. Battistig, N. Q. Khánh, P. Petrik, T. Lohner, L. Dobos, B. Pécz, J. García López, and Y. Morilla4H-SiC single crystalline substrates were implanted at room temperature with 150 keV Al+ ions using fluences of 4×1014, 1×1015, and 2×1015 cm−2 with current density of 2.5 µA cm−2.... (Read more)
- 406. J. Appl. Phys. 100, 083521 (2006) , “Thermally activated charge reversibility of gallium vacancies in GaAs”, Fedwa El-Mellouhi, Norm, and MousseauThe dominant charge state for the Ga vacancy in GaAs has been the subject of a long debate, with experiments suggesting −1, −2, or −3 as the best answer. We revisit this problem using ab initio calculations to compute the effects of temperature on the Gibbs free energy of... (Read more)
- 407. J. Appl. Phys. 100, 083515 (2006) , “Stress dependence of the near-band-gap cathodoluminescence spectrum of GaN determined by spatially resolved indentation method”, Alessandro Alan Porporati, Yoshitomo Tanaka, Atsuo Matsutani, Wenliang Zhu, and Giuseppe PezzottiA microscopic procedure has been proposed for evaluating the stress dependence of the (room-temperature) cathodoluminescence (CL) excitonic band emitted from the (0001) crystallographic plane of GaN in a field-emission-gun scanning electron microscope. The room-temperature near-band-gap emission... (Read more)
- 408. J. Appl. Phys. 100, 083512 (2006) , “Spectroscopy and optically stimulated luminescence of Al2O3:C using time-resolved measurements”, E. G. Yukihara and S. W. S. McKeeverThis paper reports the observation of ultraviolet (UV) emission at 335 nm in the optically stimulated luminescence (OSL) of carbon-doped aluminum oxide (Al2O3:C) and presents results on the investigation of the OSL properties of this band, including its dose response, time... (Read more)
- 409. J. Appl. Phys. 100, 083511 (2006) , “Multispecies nitrogen diffusion in silicon”, V. V. Voronkov and R. FalsterOutdiffusion profiles of nitrogen, produced by 900 °C annealing and monitored by secondary ion mass spectroscopy, clearly show that the nitrogen community consists of three noninteracting components. The A component (dominant at higher nitrogen concentration) is represented by a species... (Read more)
- 410. J. Appl. Phys. 100, 083106 (2006) , “Photoluminescence of Tb3+ doped SiNx films grown by plasma-enhanced chemical vapor deposition”, Zhizhong Yuan, Dongsheng Li, Minghua Wang, Peiliang Chen, Daoren Gong, Lei Wang, and Deren YangRoom temperature photoluminescence (PL) properties of the Tb3+ ion implanted nonstoichiometric silicon nitride (Tb3+:SiNx) and silicon dioxide (Tb3+:SiOx) were studied. The films were deposited by plasma-enhanced chemical vapor... (Read more)
- 411. J. Appl. Phys. 100, 074313 (2006) , “Deep levels in silicon Schottky junctions with embedded arrays of ß -FeSi2 nanocrystallites”, A. Tsormpatzoglou, D. H. Tassis, C. A. Dimitriadis, L. Dózsa, N. G. Galkin, D. L. Goroshko, V. O. Polyarnyi, and E. A. ChusovitinSchottky contacts on p-type silicon, with embedded arrays of β-FeSi2 nanocrystallites, were studied by current-voltage (I-V), deep level transient spectroscopy (DLTS), and low-frequency noise measurements. Forward I-V characteristics on logarithmic... (Read more)
- 412. J. Appl. Phys. 100, 073702 (2006) , “Size and shape effects on excitons and biexcitons in single InAs/InP quantum dots”, N. Chauvin, B. Salem, G. Bremond, G. Guillot, C. Bru-Chevallier, and M. GendrySingle InAs quantum dots grown on an InP vicinal substrate are studied using polarized microphotoluminescence. The study of electron-hole exchange energy splitting reveals that the energy splitting is influenced by quantum confinement. The biexciton binding energies found for single dots grown on... (Read more)
- 413. J. Appl. Phys. 100, 073518 (2006) , “Void formation and surface energies in Cu(InGa)Se2”, C. Lei, A. Rockett, I. M. Robertson, W. N. Shafarman, and M. BeckThe spontaneous formation of voids has been observed in Cu(In,Ga)Se2 films deposited by multistage evaporation processes but was not found commonly in single-stage evaporated material. These voids may be isolated in the grains or may occur at the grain boundaries. The voids exhibit... (Read more)
- 414. J. Appl. Phys. 100, 073511 (2006) , “Depth profiling of strain and defects in Si/Si1–xGex/Si heterostructures by micro-Raman imaging”, T. Mitani, S. Nakashima, H. Okumura, and A. OguraWe have reported depth and in-plane profiling of strain, Ge composition, and defects in strained-Si/Si1xGex/Si heterostructures using micro-Raman imaging. Raman profiling in the depth direction was carried out with a depth resolution of ~15 nm using a... (Read more)
- 415. J. Appl. Phys. 100, 073501 (2006) , “Identification by photoluminescence and positron annihilation of vacancy and interstitial intrinsic defects in ion-implanted silicon”, R. Harding, G. Davies, J. Tan, P. G. Coleman, C. P. Burrows, and J. Wong-LeungDefect centers generated in crystalline silicon by MeV Si implants have been investigated by a combination of photoluminescence, variable-energy positron annihilation measurements, depth profiling by etching, annealing studies, and the dependence on impurities. The broad 935 meV photoluminescence... (Read more)
- 416. J. Appl. Phys. 100, 064910 (2006) , “Defects in Ga(In)NAs thin films grown by atomic H-assisted molecular beam epitaxy”, Yukiko Shimizu, Yusuke Mura, Akira Uedono, and Yoshitaka OkadaThe vacancy-type defects in Ga1yInyNxAs1x dilute nitride films grown by atomic H-assisted molecular beam epitaxy (H-MBE) were investigated. The positron annihilation measurements showed that the densities of... (Read more)
- 417. J. Appl. Phys. 100, 064501 (2006) , “Introduction of defects into HfO2 gate dielectrics by metal-gate deposition studied using x-ray photoelectron spectroscopy and positron annihilation”, A. Uedono, T. Naito, T. Otsuka, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, Y. Akasaka, S. Kamiyama, Y. Nara, and K. YamadaThe impact of TiN deposition on thin HfO2 films formed on Si substrates was studied using x-ray photoelectron spectroscopy and a monoenergetic positron beam. For the predeposition sample, the positrons implanted into Si were found to diffuse toward the HfO2/Si interface under... (Read more)
- 418. J. Appl. Phys. 100, 063715 (2006) , “Hopping conductivity in p-CuGaSe2 films”, E. Arushanov, S. Siebentritt, T. Schedel-Niedrig, and M. Ch. Lux-SteinerThe results of resistivity measurements on p-type CuGaSe2 films are presented and analyzed within the framework of different hopping conductivity models. Both the Mott [N. Mott and E. A. Davies, Electron Processes in Non-Crystalline Materials (Clarendon, Oxford, 1979); N. F.... (Read more)
- 419. J. Appl. Phys. 100, 063706 (2006) , “Effect of dislocations on minority carrier diffusion length in practical silicon solar cells”, Thomas Kieliba, Stephan Riepe, and Wilhelm WartaIn 1998, Donolato presented an analytical model describing the effect of dislocation density on minority carrier effective diffusion length [J. Appl. Phys. 84, 2656 (1998)]. While this analysis was derived for a "semi-infinite" specimen, our objective is the appropriate description... (Read more)
- 420. J. Appl. Phys. 100, 063517 (2006) , “Extraction of Cu diffusivities in dielectric materials by numerical calculation and capacitance-voltage measurement”, Ki-Su Kim, Young-Chang Joo, Ki-Bum Kim, and Jang-Yeon KwonA rigorous method of obtaining the Cu diffusivities in various SiO2-based dielectric materials is proposed. The diffusion profile of Cu ions in a dielectric material is first simulated and the resulting flatband voltage shift (VFB) is compared with the experimental... (Read more)
- 421. J. Appl. Phys. 100, 053708 (2006) , “Optical cross sections of deep levels in 4H-SiC”, M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto, and R. PässlerWe have characterized deep levels in 4H-SiC epilayers grown by cold wall chemical vapor deposition by the deep level transient spectroscopy (DLTS) and the optical-capacitance-transient spectroscopy (O-CTS). Four kinds of DLTS peaks were detected in the epilayers. Three of them are identified... (Read more)
- 422. J. Appl. Phys. 100, 053521 (2006) , “Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide”, P. O. Å. Persson, L. Hultman, M. S. Janson, and A. HallénThe annealing behavior of interstitial-type basal plane dislocation loops in Al ion implanted 4H-SiC is investigated. It is shown that the loops undergo a dynamical ripening process. For annealing below 1700 °C the total area of dislocation loops increases, indicating that point defects... (Read more)
- 423. J. Appl. Phys. 100, 053516 (2006) , “Damage production in GaAs and GaAsN induced by light and heavy ions”, C. Björkas, K. Nordlund, K. Arstila, J. Keinonen, V. D. S. Dhaka, and M. PessaIon irradiation causes damage in semiconductor crystal structures and affects charge carrier dynamics. We have studied the damage production by high-energy (100 keV10 MeV) H, He, Ne, and Ni ions in GaAs and GaAs90N10 using molecular dynamics computer simulations. We... (Read more)
- 424. J. Appl. Phys. 100, 053103 (2006) , “Spatially resolved distribution of dislocations and crystallographic tilts in GaN layers grown on Si(111) substrates by maskless cantilever epitaxy”, R. I. Barabash, C. Roder, G. E. Ice, S. Einfeldt, J. D. Budai, O. M. Barabash, S. Figge, and D. HommelThe spatial distribution of strain, misfit and threading dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) substrates by maskless cantilever epitaxy was studied by polychromatic x-ray microdiffraction, high resolution monochromatic x-ray diffraction, and... (Read more)
- 425. J. Appl. Phys. 100, 044503 (2006) , “Dislocation dynamics in strain relaxation in GaAsSb/GaAs heteroepitaxy”, B. Pérez Rodríguez and J. Mirecki MillunchickThe real-time stress evolution has been investigated during molecular-beam epitaxial growth of GaAs1xSbx/GaAs metamorphic buffer. These real-time data were obtained using an in situ multibeam optical sensor measurement and has been combined with... (Read more)
- 426. J. Appl. Phys. 100, 044303 (2006) , “Spin relaxation in a germanium nanowire”, S. Patibandla, S. Pramanik, S. Bandyopadhyay, and G. C. TepperWe report experimental study of spin transport in nanowire spin valve structures consisting of three layerscobalt, germanium, and nickel. The spin diffusion length in the Ge is estimated to be about 400 nm at 1.9 K and the corresponding spin relaxation time is about 4 ns. At 100 K, the... (Read more)
- 427. J. Appl. Phys. 100, 044109 (2006) , “Variable energy positron beam analysis of vacancy defects in laser ablated SrTiO3 thin films on SrTiO3”, S. McGuire, D. J. Keeble, R. E. Mason, P. G. Coleman, Y. Koutsonas, and T. J. JacksonVacancies are known often to be the dominant type of point defects in perovskite oxides, but their presence can rarely be directly determined. Positron annihilation methods have unique sensitivity to vacancy-related defects and the variable energy positron beam (VEPB) techniques allow near-surface... (Read more)
- 428. J. Appl. Phys. 100, 044105 (2006) , “Structural defects in multiferroic BiMnO3 studied by transmission electron microscopy and electron energy-loss spectroscopy”, H. Yang, Z. H. Chi, L. D. Yao, W. Zhang, F. Y. Li, C. Q. Jin, and R. C. YuThe multiferroic material BiMnO3 synthesized under high pressure has been systematically studied by transmission electron microscopy and electron energy-loss spectroscopy, and some important structural defects are revealed in this multiferroic material. The frequently observed defects are... (Read more)
- 429. J. Appl. Phys. 100, 043706 (2006) , “Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC”, W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. BalkasTemperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)
- 430. J. Appl. Phys. 100, 043703 (2006) , “Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure”, S. W. Lin, A. M. Song, N. Rigopolis, B. Hamilton, A. R. Peaker, and M. MissousThe effects of postgrowth rapid thermal annealing on the electronic states in a relatively long wavelength (~1.3 µm), self-assembled InAs/GaAs quantum-dot structure are investigated. We combine optical and electrical experiments, i.e., photoluminescence (PL) and deep-level transient... (Read more)
- 431. J. Appl. Phys. 100, 043513 (2006) , “Measurement of temperature-dependent defect diffusion in proton-irradiated GaN(Mg, H)”, R. M. Fleming and S. M. MyersDeuterated p-type GaN(Mg,2H) films were irradiated at room temperature with 1 MeV protons to create native point defects with a concentration approximately equal to the Mg doping (5×1019 cm3). The samples were then annealed isothermally at a... (Read more)
- 432. J. Appl. Phys. 100, 043505 (2006) , “Damage accumulation in neon implanted silicon”, E. Oliviero, S. Peripolli, L. Amaral, P. F. P. Fichtner, M. F. Beaufort, J. F. Barbot, and S. E. DonnellyDamage accumulation in neon-implanted silicon with fluences ranging from 5×1014 to 5×1016 Ne cm2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling... (Read more)
- 433. J. Appl. Phys. 100, 034911 (2006) , “Thermal evolution of hydrogen related defects in hydrogen implanted Czochralski silicon investigated by Raman spectroscopy and atomic force microscopy”, W. Düngen, R. Job, Y. Ma, Y. L. Huang, T. Mueller, W. R. Fahrner, L. O. Keller, J. T. Horstmann, and H. FiedlerMicro-Raman spectroscopy and atomic force microscopy investigations have been applied on hydrogen implanted p-type Czochralski silicon samples to investigate the hydrogen related defects and their evolution after subsequent annealing. The thermal evolution of interstitial-hydrogen and... (Read more)
- 434. J. Appl. Phys. 100, 034509 (2006) , “Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams”, A. Uedono, K. Ikeuchi, T. Otsuka, K. Yamabe, K. Eguchi, M. Takayanagi, S. Ishibashi, T. Ohdaira, M. Muramatsu, and R. SuzukiVacancy-impurity complexes in polycrystalline Si (poly-Si) used as a gate electrode of the metal-oxide-semiconductor field-effect transistor (MOSFET) were probed using monoenergetic positron beams. Doppler broadening spectra of the annihilation radiation and the positron lifetimes were measured for... (Read more)
- 435. J. Appl. Phys. 100, 034503 (2006) , “Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates”, M. González, C. L. Andre, R. J. Walters, S. R. Messenger, J. H. Warner, J. R. Lorentzen, A. J. Pitera, E. A. Fitzgerald, and S. A. RingelThe effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly... (Read more)
- 436. J. Appl. Phys. 100, 034318 (2006) , “Electric-field-induced quenching of photoluminescence in photoconductive organic thin film structures based on Eu3+ complexes”, J. Kalinowski, W. Stampor, M. Cocchi, D. Virgili, and V. FattoriA large electric field effect on photoluminescence (PL) from electroluminescent emitters sandwiched between two high-work-function electrodes is reported and a model of the effect formulated. We examine the PL behavior of Eu3+ complex-based organic thin films subjected to increasing... (Read more)
- 437. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 438. J. Appl. Phys. 100, 034304 (2006) , “Shrinkage of nanocavities in silicon during electron beam irradiation”, Xianfang ZhuAn internal shrinkage of nanocavity in silicon was in situ observed under irradiation of energetic electron on electron transmission microscopy. Because there is no addition of any external materials to cavity site, a predicted nanosize effect on the shrinkage was observed. At the same time,... (Read more)
- 439. J. Appl. Phys. 100, 033901 (2006) , “Spin-dependent transport in diluted-magnetic-semiconductor/semiconductor quantum wires”, Wen Xu and Yong GuoSpin-polarized transport properties have been investigated in diluted-magnetic-semiconductor/semiconductor quantum wires. We stress the effects introduced by the structural configuration and geometric parameters as well as the external magnetic field. It is found that the symmetric quantum wire... (Read more)
- 440. J. Appl. Phys. 100, 033717 (2006) , “Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism”, Hiroshi Yanagi, Shuichi Ohno, Toshio Kamiya, Hidenori Hiramatsu, Masahiro Hirano, and Hideo HosonoLaCuOSe is a wide band gap p-type semiconductor in which high density positive holes can be doped to exhibit degenerate conduction. These features should allow room-temperature ferromagnetism in a dilute magnetic semiconductor (DMS), which follows a theoretical prediction [T. Dietl et al.,... (Read more)
- 441. J. Appl. Phys. 100, 033711 (2006) , “Damage and recovery in boron doped silicon on insulator layers after high energy Si+ implantation”, M. Ferri, S. Solmi, D. Nobili, and A. ArmigliatoThe effects of 2 MeV Si+ implantation on silicon-on-insulator layers uniformly doped with B at concentrations 1.0 and 1.8×1020 cm3, and the kinetics of damage recovery were investigated by carrier density, mobility measurements, and transmission... (Read more)
- 442. J. Appl. Phys. 100, 033525 (2006) , “Determination of interstitial oxygen concentration in germanium by infrared absorption”, V. V. Litvinov, B. G. Svensson, L. I. Murin, J. L. Lindström, V. P. Markevich, and A. R. PeakerThe intensities of infrared absorption due to the asymmetric stretching vibrations of interstitial oxygen atoms in Ge crystals enriched with 16O and 18O isotopes have been compared with oxygen concentrations determined by means of secondary ion mass spectrometry. For Ge samples... (Read more)
- 443. J. Appl. Phys. 100, 033523 (2006) , “The CiCs(SiI) defect in silicon: An infrared spectroscopy study”, M. S. Potsidi and C. A. LondosInfrared (IR) spectroscopy was employed for a thorough study of the CiCs(SiI) defect formed in neutron-irradiated carbon-doped Czochralski silicon material. Its IR signals at 987 and 993 cm1, as well as the thermal evolution of the... (Read more)
- 444. J. Appl. Phys. 100, 033517 (2006) , “Sources of optical absorption between 5.7 and 5.9 eV in silica implanted with Si or O”, R. H. Magruder, III, A. Stesmans, K. Clémer, R. A. Weeks, and R. A. WellerTo determine if the only source of optical absorption between 5.8 and 5.9 eV is the E center (absorbing at 5.85 eV) two separate suites of type III silica samples were implanted, one with Si and one with O. Several ion energies were used for implantation to produce layers 600 and... (Read more)
- 445. J. Appl. Phys. 100, 024510 (2006) , “Influence of iron contamination on the performances of single-crystalline silicon solar cells: Computed and experimental results”, S. Dubois, O. Palais, M. Pasquinelli, S. Martinuzzi, C. Jaussaud, and N. RondelIn this paper, the impact of iron contamination on the conversion efficiency of single-crystalline p-type silicon solar cells is investigated by means of the combination of numerical simulations and experimental data, taking into account the more recent results about the properties of iron in... (Read more)
- 446. J. Appl. Phys. 100, 024103 (2006) , “Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks”, Melody P. Agustin, Gennadi Bersuker, Brendan Foran, Lynn A. Boatner, and Susanne StemmerElectron energy-loss spectroscopy combined with high-angle annular dark-field (HAADF) imaging in scanning transmission electron microscopy was used to investigate the chemistry of interfacial layers in HfO2 gate stacks capped with polycrystalline Si gate electrodes. To interpret the... (Read more)
- 447. J. Appl. Phys. 100, 023712 (2006) , “Exciton migration in organic thin films”, Y. C. Zhou, Y. Wu, L. L. Ma, J. Zhou, X. M. Ding, and X. Y. HouLimitations of the analytical method for calculating the exciton distribution in organic thin films, attributed to the improper boundary conditions when the organic film approaches the exciton diffusion length, were analyzed by comparison with an exciton random walk simulation. The random walk... (Read more)
- 448. J. Appl. Phys. 100, 023711 (2006) , “Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy”, S.-D. Tzeng and S. GwoCharge trapping properties of electrons and holes in ultrathin nitride-oxide-silicon (NOS) structures were quantitatively determined by variable-temperature electrostatic force microscopy (EFM). From charge retention characteristics obtained at temperatures between 250 and 370 °C and assuming... (Read more)
- 449. J. Appl. Phys. 100, 023709 (2006) , “Effect of threading dislocation density on Ni/n-GaN Schottky diode I-V characteristics”, A. R. Arehart, B. Moran, J. S. Speck, U. K. Mishra, S. P. DenBaars, and S. A. RingelThe impact of threading dislocation density on Ni/n-GaN Schottky barrier diode characteristics is investigated using forward biased current-voltage-temperature (I-V-T) and internal photoemission (IPE) measurements. Nominally, identical metal-organic chemical vapor... (Read more)
- 450. J. Appl. Phys. 100, 023704 (2006) , “Transformation behavior of room-temperature-stable metastable defects in hydrogen-implanted n-type silicon studied by isothermal deep-level transient spectroscopy”, Yutaka TokudaIsothermal deep-level transient spectroscopy (DLTS) with a single pulse has been used to study the transformation behavior of hydrogen-related metastable defects labeled EM1 (Ec0.28 eV) and EM2 (Ec0.37 eV), which are observed in... (Read more)
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