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- 51. Phys. Rev. B 78, 233201 (2008) , “Gallium interstitial in irradiated germanium: Deep level transient spectroscopy”, Vl. Kolkovsky, M. Christian Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. Nylandsted LarsenTwo electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS... (Read more)
- 52. Phys. Rev. B 78, 113202 (2008) , “Two FeH pairs in n-type Si and their implications: A theoretical study”, N. Gonzalez Szwacki, M. Sanati, and S. K. EstreicherExperimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first... (Read more)
- 53. Phys. Rev. B 78, 085214 (2008) , “First-principles study of native defects in CdGeAs2”, Tula R. Paudel and Walter R. L. LambrechtFirst-principles results are presented for various native defects in CdGeAs2 as function of the relevant elements' chemical potentials. The defect formation energies were calculated using fully relaxed 64 atom supercells by means of the full-potential linearized muffin-tin orbital... (Read more)
- 54. Phys. Rev. B 78, 085205 (2008) , “Formation and origin of the dominating electron trap in irradiated p-type silicon”, Lasse Vines, E. V. Monakhov, A. Yu. Kuznetsov, R. Kozowski, P. Kaminski, and B. G. SvenssonDeep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6×1013−2×1015 cm−3.... (Read more)
- 55. Phys. Rev. B 78, 085202 (2008) , “Evolution of vacancy-related defects upon annealing of ion-implanted germanium”, J. Slotte, M. Rummukainen, F. Tuomisto, V. P. Markevich, A. R. Peaker, C. Jeynes, and R. M. GwilliamPositron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 ... (Read more)
- 56. Phys. Rev. B 78, 035125 (2008) , “Mechanisms of electrical isolation in O+-irradiated ZnO”, A. Zubiaga, F. Tuomisto, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. YanoWe have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are... (Read more)
- 57. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. CapanWe have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×1015 cm−3] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)
- 58. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 59. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 60. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. GelardiWe report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in β-ray irradiated and... (Read more)
- 61. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 62. Phys. Rev. B 77, 081201(R) (2008) , “Electron paramagnetic resonance studies of the neutral nitrogen vacancy in diamond”, S. Felton, A. M. Edmonds, M. E. Newton, P. M. Martineau, D. Fisher, and D. J. TwitchenDespite the numerous experimental and theoretical studies on the negatively charged nitrogen vacancy center (NV−) in diamond and the predictions that the neutral nitrogen vacancy center (NV0) should have an S= ground state, NV0 has not previously been... (Read more)
- 63. Phys. Rev. B 77, 073206 (2008) , “Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon”, J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset, and B. G. SvenssonIn hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 °C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal... (Read more)
- 64. Phys. Rev. B 77, 045204 (2008) , “Vacancy clustering and acceptor activation in nitrogen-implanted ZnO”, Thomas Moe Børseth, Filip Tuomisto, Jens S. Christensen, Edouard V. Monakhov, Bengt G. Svensson, and Andrej Yu. KuznetsovThe role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using... (Read more)
- 65. Phys. Rev. B 77, 035201 (2008) , “Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN”, Yong Zhang, Wen Liu and Hanben NiuUsing the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p-type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that... (Read more)
- 66. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO3 Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. KeeblePoint defects associated with Cu(II) in ferroelectric PbTiO3 were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor 207Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)
- 67. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. JohanssonMigration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)
- 68. Phys. Rev. Lett. 100, 026803 (2008) , “Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks”, A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. WiggersWe have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of... (Read more)
- 69. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 70. Appl. Phys. Lett. 91, 202111 (2007) , “Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC”, N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. JanzénElectron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×1015–1.1×1017 cm−3. Our results show that the electrical activation of V is low and hence only in... (Read more)
- 71. Appl. Phys. Lett. 91, 152102 (2007) , “N–O related shallow donors in silicon: Stoichiometry investigations”, H. E. Wagner, H. Ch. Alt, W. von Ammon, F. Bittersberger, A. Huber, and L. KoesterFor clarification of the unknown chemical composition of the electrically active N–O defects in silicon, an ingot with variable oxygen content and fixed nitrogen concentration was investigated by infrared spectroscopy. Shallow donor spectra taken at different sample positions, i.e., oxygen... (Read more)
- 72. Appl. Phys. Lett. 91, 142101 (2007) , “Dangling-bond defects and hydrogen passivation in germanium”, J. R. Weber, A. Janotti, P. Rinke, and C. G. Van de WalleThe application of germanium in complementary metal-oxide semiconductor technology is hampered by high interface-state densities. Using first-principles calculations, we investigate the effects of dangling bonds (DBs) and their interaction with hydrogen. We find that Ge DBs give rise to electronic... (Read more)
- 73. Appl. Phys. Lett. 91, 133507 (2007) , “Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices”, J. P. Campbell, P. M. Lenahan, A. T. Krishnan, and S. KrishnanWe utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p-channel metal-oxide-silicon field-effect transistors. The defect's 29Si hyperfine... (Read more)
- 74. Appl. Phys. Lett. 91, 132105 (2007) , “Shallow acceptors in GaN”, T. A. G. Eberlein, R. Jones, S. Öberg, and P. R. BriddonRecent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that CN is the most... (Read more)
- 75. Appl. Phys. Lett. 91, 122109 (2007) , “Determining the defect parameters of the deep aluminum-related defect center in silicon”, Philipp Rosenits, Thomas Roth, Stefan W. Glunz, and Svetlana BeljakowaThrough a combined application of two characterization methods, deep-level transient spectroscopy and lifetime spectroscopy, the lifetime-limiting defect level in intentionally aluminum-contaminated Czochralski silicon has been analyzed and a complete set of defect parameters could be obtained. This... (Read more)
- 76. Appl. Phys. Lett. 91, 104105 (2007) , “Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy”, F. A. Selim, D. Solodovnikov, M. H. Weber, and K. G. LynnPositron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y3Al5O12 (YAG) single crystals. By annealing at 1500 °C in air or... (Read more)
- 77. Appl. Phys. Lett. 91, 092107 (2007) , “Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN”, O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, F. Ren, S. J. Pearton, and K. GartsmanThe electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole... (Read more)
- 78. Appl. Phys. Lett. 91, 043503 (2007) , “Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN”, Aurangzeb Khan, J. Gou, M. Imazumi, and M. YamaguchiThe authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron... (Read more)
- 79. Appl. Phys. Lett. 91, 022913 (2007) , “Defects in hydrothermally grown bulk ZnO”, H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. DurbinHydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52 meV, respectively, were... (Read more)
- 80. Appl. Phys. Lett. 90, 152108 (2007) , “Correlation between carrier recombination and p-type doping in P monodoped and In–P codoped ZnO epilayers”, J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. KwongThe carrier recombination processes in p-type ZnO epilayers with P monodoping and In–P codoping have been studied by temperature-dependent photoluminescence spectroscopy. Good correlations were observed between carrier recombination and acceptor and donor energy levels. The exciton... (Read more)
- 81. Appl. Phys. Lett. 90, 152103 (2007) , “Ab initio studies of arsenic and boron related defects in silicon mesa diodes”, C. Janke, R. Jones, S. Öberg, and P. R. BriddonE centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As2V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The... (Read more)
- 82. Appl. Phys. Lett. 90, 142116 (2007) , “Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance”, K. Clémer, A. Stesmans, and V. V. Afanas'evElectron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500–900 °C. Based on the principal g matrix (axial; g=1.9965; g=1.9975) and hyperfine... (Read more)
- 83. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 84. Appl. Phys. Lett. 90, 123501 (2007) , “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, C. J. Cochrane, P. M. Lenahan, and A. J. LelisThe authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed... (Read more)
- 85. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more)
- 86. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more).inp files: PbTe | last update: Sergey V. Ovsyannikov
- 87. Appl. Phys. Lett. 90, 122101 (2007) , “Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact”, Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, and H. C. OngConversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy.... (Read more)
- 88. Appl. Phys. Lett. 90, 112110 (2007) , “Alpha-particle irradiation-induced defects in n-type germanium”, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted LarsenDeep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant... (Read more)
- 89. Appl. Phys. Lett. 90, 074101 (2007) , “Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique”, B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. MorStacking fault generation within silicon germanium on insulator substrates fabricated by the Ge condensation technique has been evidenced by transmission electronic microscopy analyses for high Ge content enrichments (80%). This phenomenon is explained as a typical strain relaxation mechanism... (Read more)
- 90. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. PaceThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)
- 91. Appl. Phys. Lett. 90, 072905 (2007) , “Imaging deep trap distributions by low vacuum scanning electron microscopy”, Milos Toth, W. Ralph Knowles, and Matthew R. PhillipsThe distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of... (Read more)
- 92. Appl. Phys. Lett. 90, 072502 (2007) , “Effect of oxygen vacancies on spin-dependent tunneling in Fe/MgO/Fe magnetic tunnel junctions”, J. P. Velev, K. D. Belashchenko, S. S. Jaswal, and E. Y. TsymbalFirst-principles calculations based on density functional theory are used to elucidate the effect of O vacancies, forming F centers, on spin-dependent tunneling in Fe/MgO/Fe(001) magnetic tunnel junctions. O vacancies produce occupied localized s states and unoccupied resonant p... (Read more)
- 93. Appl. Phys. Lett. 90, 072107 (2007) , “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN”, J. Mimila-Arroyo, M. Barbé, F. Jomard, J. Chevallier, M. A. di Forte-Poisson, S. L. Delage, and C. Dua.Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm−2. A deuterium diffusion mechanism was observed yielding concentrations around 1018 ... (Read more)
- 94. Appl. Phys. Lett. 90, 063103 (2007) , “Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires”, U. Philipose, S. Yang, T. Xu, and Harry E. RudaIn this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was... (Read more)
- 95. Appl. Phys. Lett. 90, 062116 (2007) , “Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation”, Liutauras Storasta and Hidekazu TsuchidaThe authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of... (Read more)
- 96. Appl. Phys. Lett. 90, 062113 (2007) , “Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers”, I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. ThomasNitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z1,2 and EH6,7 levels during... (Read more)
- 97. Appl. Phys. Lett. 90, 052901 (2007) , “Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures”, S. Walsh, L. Fang, J. K. Schaeffer, E. Weisbrod, and L. J. BrillsonThe authors have used low energy electron-excited nanoscale-depth-resolved spectroscopy to probe the bulk and interface defect states of ultrathin Mo/HfO2/Si with conventional process sequences. Multiple deep level emissions are evident below the 5.9 eV HfO2 near band edge,... (Read more)
- 98. Appl. Phys. Lett. 90, 051902 (2007) , “Recombination processes in undoped and rare-earth doped MAl2O4 (M=Ca,Sr) persistent phosphors investigated by optically detected magnetic resonance”, Stefan Schweizer, Bastian Henke, Uldis Rogulis, and William M. YenThe authors present magneto-optical measurements on single-crystal MAl2O4 (M=Ca and Sr) persistent phosphors that are nominally pure or doped with Eu and Nd or Dy, respectively. Their recombination luminescence (RL) and microwave-induced changes in the RL in a... (Read more)
- 99. Appl. Phys. Lett. 90, 042105 (2007) , “Stress induced leakage current mechanism in thin Hf-silicate layers”, A. Paskaleva, M. Lemberger, and A. J. BauerStress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1)... (Read more)
- 100. Appl. Phys. Lett. 90, 041910 (2007) , “Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing”, J. Tan, G. Davies, S. Hayama, and A. Nylandsted LarsenThe authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si1−xGex at low temperature annealing. From the results of photoluminescence, the annealing behavior of... (Read more)
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