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- 76. Appl. Phys. Lett. 91, 104105 (2007) , “Identification of defects in Y3Al5O12 crystals by positron annihilation spectroscopy”, F. A. Selim, D. Solodovnikov, M. H. Weber, and K. G. LynnPositron annihilation, thermoluminescence, and optical absorption measurements were applied with the aid of several annealing and diffusion procedures to investigate the nature of point defects in Y3Al5O12 (YAG) single crystals. By annealing at 1500 °C in air or... (Read more)
- 77. Appl. Phys. Lett. 91, 092107 (2007) , “Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN”, O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, F. Ren, S. J. Pearton, and K. GartsmanThe electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole... (Read more)
- 78. Appl. Phys. Lett. 91, 043503 (2007) , “Interaction of electron irradiation with nitrogen-related deep levels in InGaAsN”, Aurangzeb Khan, J. Gou, M. Imazumi, and M. YamaguchiThe authors present an investigation of 1 MeV electron irradiation-induced defects in p-InGaAsN and their impact on nitrogen-related defects. A hitherto existing nitrogen-related electron trap E1 (0.20 eV) shows a significant increase in concentration after 1 MeV electron... (Read more)
- 79. Appl. Phys. Lett. 91, 022913 (2007) , “Defects in hydrothermally grown bulk ZnO”, H. von Wenckstern, H. Schmidt, M. Grundmann, M. W. Allen, P. Miller, R. J. Reeves, and S. M. DurbinHydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20 eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52 meV, respectively, were... (Read more)
- 80. Appl. Phys. Lett. 90, 152108 (2007) , “Correlation between carrier recombination and p-type doping in P monodoped and In–P codoped ZnO epilayers”, J. D. Ye, S. L. Gu, F. Li, S. M. Zhu, R. Zhang, Y. Shi, Y. D. Zheng, X. W. Sun, G. Q. Lo, and D. L. KwongThe carrier recombination processes in p-type ZnO epilayers with P monodoping and In–P codoping have been studied by temperature-dependent photoluminescence spectroscopy. Good correlations were observed between carrier recombination and acceptor and donor energy levels. The exciton... (Read more)
- 81. Appl. Phys. Lett. 90, 152103 (2007) , “Ab initio studies of arsenic and boron related defects in silicon mesa diodes”, C. Janke, R. Jones, S. Öberg, and P. R. BriddonE centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As2V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The... (Read more)
- 82. Appl. Phys. Lett. 90, 142116 (2007) , “Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance”, K. Clémer, A. Stesmans, and V. V. Afanas'evElectron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500–900 °C. Based on the principal g matrix (axial; g=1.9965; g=1.9975) and hyperfine... (Read more)
- 83. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 84. Appl. Phys. Lett. 90, 123501 (2007) , “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, C. J. Cochrane, P. M. Lenahan, and A. J. LelisThe authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed... (Read more)
- 85. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more)
- 86. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more).inp files: PbTe | last update: Sergey V. Ovsyannikov
- 87. Appl. Phys. Lett. 90, 122101 (2007) , “Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact”, Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, and H. C. OngConversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy.... (Read more)
- 88. Appl. Phys. Lett. 90, 112110 (2007) , “Alpha-particle irradiation-induced defects in n-type germanium”, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted LarsenDeep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant... (Read more)
- 89. Appl. Phys. Lett. 90, 074101 (2007) , “Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique”, B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. MorStacking fault generation within silicon germanium on insulator substrates fabricated by the Ge condensation technique has been evidenced by transmission electronic microscopy analyses for high Ge content enrichments (80%). This phenomenon is explained as a typical strain relaxation mechanism... (Read more)
- 90. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. PaceThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)
- 91. Appl. Phys. Lett. 90, 072905 (2007) , “Imaging deep trap distributions by low vacuum scanning electron microscopy”, Milos Toth, W. Ralph Knowles, and Matthew R. PhillipsThe distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of... (Read more)
- 92. Appl. Phys. Lett. 90, 072502 (2007) , “Effect of oxygen vacancies on spin-dependent tunneling in Fe/MgO/Fe magnetic tunnel junctions”, J. P. Velev, K. D. Belashchenko, S. S. Jaswal, and E. Y. TsymbalFirst-principles calculations based on density functional theory are used to elucidate the effect of O vacancies, forming F centers, on spin-dependent tunneling in Fe/MgO/Fe(001) magnetic tunnel junctions. O vacancies produce occupied localized s states and unoccupied resonant p... (Read more)
- 93. Appl. Phys. Lett. 90, 072107 (2007) , “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN”, J. Mimila-Arroyo, M. Barbé, F. Jomard, J. Chevallier, M. A. di Forte-Poisson, S. L. Delage, and C. Dua.Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm−2. A deuterium diffusion mechanism was observed yielding concentrations around 1018 ... (Read more)
- 94. Appl. Phys. Lett. 90, 063103 (2007) , “Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires”, U. Philipose, S. Yang, T. Xu, and Harry E. RudaIn this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was... (Read more)
- 95. Appl. Phys. Lett. 90, 062116 (2007) , “Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation”, Liutauras Storasta and Hidekazu TsuchidaThe authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of... (Read more)
- 96. Appl. Phys. Lett. 90, 062113 (2007) , “Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers”, I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. ThomasNitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z1,2 and EH6,7 levels during... (Read more)
- 97. Appl. Phys. Lett. 90, 052901 (2007) , “Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures”, S. Walsh, L. Fang, J. K. Schaeffer, E. Weisbrod, and L. J. BrillsonThe authors have used low energy electron-excited nanoscale-depth-resolved spectroscopy to probe the bulk and interface defect states of ultrathin Mo/HfO2/Si with conventional process sequences. Multiple deep level emissions are evident below the 5.9 eV HfO2 near band edge,... (Read more)
- 98. Appl. Phys. Lett. 90, 051902 (2007) , “Recombination processes in undoped and rare-earth doped MAl2O4 (M=Ca,Sr) persistent phosphors investigated by optically detected magnetic resonance”, Stefan Schweizer, Bastian Henke, Uldis Rogulis, and William M. YenThe authors present magneto-optical measurements on single-crystal MAl2O4 (M=Ca and Sr) persistent phosphors that are nominally pure or doped with Eu and Nd or Dy, respectively. Their recombination luminescence (RL) and microwave-induced changes in the RL in a... (Read more)
- 99. Appl. Phys. Lett. 90, 042105 (2007) , “Stress induced leakage current mechanism in thin Hf-silicate layers”, A. Paskaleva, M. Lemberger, and A. J. BauerStress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1)... (Read more)
- 100. Appl. Phys. Lett. 90, 041910 (2007) , “Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing”, J. Tan, G. Davies, S. Hayama, and A. Nylandsted LarsenThe authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si1−xGex at low temperature annealing. From the results of photoluminescence, the annealing behavior of... (Read more)
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