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- 901. J. Appl. Phys. 92, 3410 (2002) , “Electron emission from deep level defects EL2 and EL6 in semi-insulating GaAs observed by positron drift velocity transient measurements”, J. M. Tsia, C. C. Ling, C. D. Beling, and S. FungA ±100 V square wave applied to a Au/semi-insulating SIGaAs interface was used to bring about electron emission from and capture into deep level defects in the region adjacent to the interface. The electric field transient resulting from deep level emission was studied by monitoring the... (Read more)
- 902. J. Appl. Phys. 92, 3130 (2002) , “Electrical and optical properties of GaN films implanted with Mn and Co”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, and N. Y. PashkovaOptical transmission spectra, microcathodoluminescence spectra, capacitancevoltage and capacitancefrequency curves, temperature dependence of resistivity and deep level spectra with both electrical and optical injection were measured on n-GaN samples implanted with high doses of... (Read more)
- 903. J. Appl. Phys. 92, 2575 (2002) , “Substitutional and interstitial carbon in wurtzite GaN”, A. F. WrightFirst-principles theoretical results are presented for substitutional and interstitial carbon in wurtzite GaN. Carbon is found to be a shallow acceptor when substituted for nitrogen (CN) and a shallow donor when substituted for gallium (CGa). Interstitial carbon... (Read more)
- 904. J. Appl. Phys. 92, 2501 (2002) , “On the nature of ion implantation induced dislocation loops in 4H-silicon carbide”, P. O. Å. Persson and L. HultmanTransmission electron microscopy was used to investigate 11B, 12C, 14N, 27Al, 28Si, and 37Ar ion-implanted 4H-SiC epilayers and subsequent defect formation after high temperature annealing. During the annealing process extrinsic... (Read more)
- 905. J. Appl. Phys. 92, 2437 (2002) , “Optical properties of oxygen precipitates and dislocations in silicon”, S. Binetti, S. Pizzini, E. Leoni, and R. SomaschiniPhotoluminescence (PL) and deep level transient spectroscopy (DLTS) measurements were used to study the origin of optical emissions in the 0.81.0 eV region of selected oxygen precipitated and dislocated silicon samples. It was shown that the D1 band, present in both types of samples, is the... (Read more)
- 906. J. Appl. Phys. 92, 1906 (2002) , “Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiOx:H films”, E. San Andrés, A. del Prado, I. Mártil, and G. González-DíazThe bonding configuration, hydrogen evolution, and defect content of rapid thermally annealed (RTA) SiOx:H films of different compositions were studied. Infrared absorption measurements showed that all the hydrogen present in the films is lost at annealing temperatures below 600... (Read more)
- 907. J. Appl. Phys. 94, 6456 (2003) , “Production and thermal decay of radiation-induced point defects in KD2PO4 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonOptical absorption and electron paramagnetic resonance (EPR) techniques have been used to characterize the production and thermal decay of point defects in undoped single crystals of KD2PO4 grown at Lawrence Livermore National Laboratory. A crystal was irradiated at 77 K with x... (Read more)
- 908. J. Appl. Phys. 94, 5617 (2003) , “Radiation-induced junction formation behavior of boron-doped Czochralski and float zone silicon crystals under 3 MeV proton irradiation”, M. D. Chun, D. Kim, and J. Y. HuhA comparative study was performed on the junction formation behavior of boron-doped p-type Czochralski (Cz) and float zone (Fz) Si wafers, which differed mainly in interstitial oxygen concentration, upon 3 MeV proton irradiation with fluences of up to 2×1015... (Read more)
- 909. J. Appl. Phys. 94, 5399 (2003) , “Optical properties of GaSe grown with an excess and a lack of Ga atoms”, S. ShigetomiMeasurements of the photoluminescence (PL) and photocurrent (PC) have been made on GaSe with excess Ga or Se atoms. The 1.77 eV emission band for the sample with excess Ga atoms is attributed to the transition from the donor level at 0.175 eV to the acceptor level at 0.152 eV. This donor level is... (Read more)
- 910. J. Appl. Phys. 94, 5297 (2003) , “Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors”, A. CavalliniThe features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaAs/GaAs heterostructure field-effect transistors both through experiments and two-dimensional numerical device simulations. Differently from electron traps located in the n-type semiconductor... (Read more)
- 911. J. Appl. Phys. 94, 4807 (2003) , “Postgrowth annealing of defects in ZnO studied by positron annihilation, x-ray diffraction, Rutherford backscattering, cathodoluminescence, and Hall measurements”, Z. Q. Chen, S. Yamamoto, M. Maekawa, and A. KawasusoDefects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature using positron annihilation, x-ray diffraction, Rutherford backscattering, Hall, and cathodoluminescence measurements. Positron lifetime measurements reveal the existence of Zn vacancy related... (Read more)
- 912. J. Appl. Phys. 94, 4363 (2003) , “Complementary infrared and transmission electron microscopy studies of the effect of high temperature–high pressure treatments on oxygen-related defects in irradiated silicon”, C. A. Londos and M. S. PotsidiCzochralski-grown silicon samples subjected to high temperaturehigh pressure (HTHP) treatments in the range of 900 °C were irradiated with fast neutrons. Transmission electron microscopy measurements revealed the presence of oxygen precipitates (SiOx) and dislocation... (Read more)
- 913. J. Appl. Phys. 94, 400 (2003) , “Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen plasma treatment on high-quality bulk n-ZnO crystals were studied. It is shown that after plasma exposure at 200 °C for 0.5 h the hydrogen penetrates into the material down to about 20 µm and shows concentrations close to 1017 cm3... (Read more)
- 914. J. Appl. Phys. 94, 3960 (2003) , “Hydrogen plasma passivation effects on properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe effects of hydrogen on the electrical and optical properties of p-GaN were investigated. Hydrogen is readily incorporated into the material at temperatures of 250350 °C, which is consistent with the low activation energy for diffusion reported by Seager et al. [J. Appl. Phys.... (Read more)
- 915. J. Appl. Phys. 94, 3923 (2003) , “Electrically active sulfur-defect complexes in sulfur implanted diamond”, R. Kalish and C. Uzan-SaguySingle crystal type IIa 100 diamonds were implanted with sulfur, phosphorus, and argon ions under different implantation and annealing conditions. Shallow (sub-MeV) as well as deep (MeV) implantations into samples held at low (liquid nitrogen) ambient (room temperature) and high (400 °C)... (Read more)
- 916. J. Appl. Phys. 94, 3796 (2003) , “Electron paramagnetic resonance characterization of impurity Gd3+ ions in a PbWO4 single crystal”, T. H. Yeom and S. H. LeeLead tungstate single crystals doped with Gd2O3 were grown by the Czochralski method in Ar atmosphere. The electron paramagnetic resonance of the Gd3+ ion in a PbWO4 single crystal has been investigated at 9.4 GHz. The spectroscopic splitting tensor... (Read more)
- 917. J. Appl. Phys. 94, 3233 (2003) , “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”, Y. Nakakura, M. Kato, M. Ichimura, and E. AraiAn optical-capacitance-transient spectroscopy (O-CTS) method was used to characterize defects in epitaxial 6H-SiC. The O-CTS measurements enable us to estimate the optical ionization energy and the optical cross section of these defects. By the deep level transient spectroscopy (DLTS), three... (Read more)
- 918. J. Appl. Phys. 94, 3075 (2003) , “Evolution of photoluminescent defect clusters in proton- and copper-implanted silicon crystals during annealing”, Minoru Nakamura and Susumu MurakamiEvolution of intrinsic defects (interstitials or vacancies) formed by implanting with protons and copper ions in silicon crystals and then annealing the crystals at temperatures from 100 to 800 °C was investigated by photoluminescence (PL) measurements. For samples annealed below 400 °C,... (Read more)
- 919. J. Appl. Phys. 94, 3069 (2003) , “Proton implantation effects on electrical and luminescent properties of p-GaN”, A. Y. Polyakov, N. B. Smirnov, and A. V. GovorkovThe electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 1012 cm2, while measurable decreases of the... (Read more)
- 920. J. Appl. Phys. 94, 301 (2003) , “Thermally stimulated luminescence from vapor-transport-equilibrated LiTaO3 crystals”, M. M. Chirila, N. Y. Garces, and L. E. HalliburtonThermally stimulated luminescence (TSL), optical absorption, and electron paramagnetic resonance (EPR) have been used to characterize the emission of ultraviolet light from undoped LiTaO3. The crystals in this study were grown from a congruent melt and then subjected to a... (Read more)
- 921. J. Appl. Phys. 94, 3004 (2003) , “Deep level transient spectroscopic study of neutron-irradiated n-type 6H–SiC”, X. D. Chen, S. Fung, C. C. Ling, and C. D. BelingDeep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6HSiC after neutron irradiation. Deep levels situated at EC0.23, EC0.36/0.44, EC0.50, and... (Read more)
- 922. J. Appl. Phys. 94, 2992 (2003) , “Effect of ion implantation parameters on Al dopant redistribution in SiC after annealing: Defect recovery and electrical properties of p-type layers”, M. Lazar, C. Raynaud, D. Planson, and J.-P. ChanteEpilayers of 6H and 4HSiC were Al implanted with various doses to form p-type layers after a postimplantation annealing performed at 1700 °C/30 min. Rutherford backscattering spectrometry in the channeling mode analyses carried out before and after annealing show virgin nonimplanted... (Read more)
- 923. J. Appl. Phys. 94, 2901 (2003) , “The 3838 Å photoluminescence line in 4H-SiC”, A. HenryWe report the results of a study of the origins of the peak near 3838 Å observed in the photoluminescence (PL) spectrum of 4H-SiC. For n+-doped 4H-SiC material, it appears as a broad peak that is shown to be related to high-level nitrogen doping, with an energy position... (Read more)
- 924. J. Appl. Phys. 94, 2895 (2003) , “Proton implantation effects on electrical and recombination properties of undoped ZnO”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, E. A. Kozhukhova, and V. I. VdovinElectrical and optical properties of undoped n-ZnO crystals implanted with 50 keV protons with doses from 5×1013 to 5×1015 cm2 are reported. Proton implantation leads to a decrease of the carrier concentration in the near-surface region, but... (Read more)
- 925. J. Appl. Phys. 94, 2888 (2003) , “Quantitative comparisons of dissolved hydrogen density and the electrical and optical properties of ZnO”, C. H. Seager and S. M. MyersRecent density functional theory calculations indicate that hydrogen is soluble in ZnO, effectively forming a shallow donor state. It has been suggested that these donors are responsible for the large increases in electron concentration seen in ZnO samples annealed at elevated temperatures in... (Read more)
- 926. J. Appl. Phys. 94, 2510 (2003) , “Electron paramagnetic resonance study of electron and hole traps in β-BaB2O4 crystals”, Wei Hong and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate point defects in single crystals of β-BaB2O4 (commonly referred to as BBO). An irradiation with x rays at 77 K produces two dominant EPR spectra, one electronlike and the other holelike. The... (Read more)
- 927. J. Appl. Phys. 94, 2234 (2003) , “Occupation probability for acceptor in Al-implanted p-type 4H–SiC”, Hideharu Matsuura, Koichi Sugiyama, Kazuhiro Nishikawa, Takashi Nagata, and Nobuya FukunagaAl-implanted p-type 4HSiC layers with different implantation and annealing temperatures are formed, and the temperature dependence of the hole concentration p(T) is obtained by Hall-effect measurements. The Al acceptor level in SiC is deep (~180 meV), and its first excited... (Read more)
- 928. J. Appl. Phys. 94, 1965 (2003) , “Magnetic resonance investigation of Mn2+ in ZnO nanocrystals”, Huijuan Zhou, Detlev M. Hofmann, Albrecht Hofstaetter, and Bruno K. MeyerElectron paramagnetic resonance measurements were carried out to probe the structure of Mn2+ in ZnO nanocrystals with different surface conditions, modified by an annealing process. Changes in the spectra by the annealing treatment indicate the existence of three Mn2+ centers.... (Read more)
- 929. J. Appl. Phys. 94, 1647 (2003) , “Defect characterization of ZnBeSe solid solutions by means of positron annihilation and photoluminescence techniques”, F. Plazaola, J. Flyktman, and K. SaarinenDefect characterization of as-grown Zn1xBexSe compound semiconductors was studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk lifetime of free positrons decreases linearly with... (Read more)
- 930. J. Appl. Phys. 94, 1485 (2003) , “Electron capture behaviors of deep level traps in unintentionally doped and intentionally doped n-type GaN”, H. K. Cho, C. S. Kim, and C.-H. HongIn n-type GaN films grown on sapphire substrates by metal-organic chemical vapor deposition such as unintentionally GaN and intentionally Si-doped GaN and In-doped GaN, the electron capture behaviors were investigated by deep level transient spectroscopy with various filling pulse durations.... (Read more)
- 931. J. Appl. Phys. 94, 140 (2003) , “Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon”, Jinggang Lu, Magnus Wagener, and George RozgonyiThe effects of grain boundaries (GB) in polycrystalline sheet silicon on impurity gettering and oxygen precipitation were investigated by electron beam induced current (EBIC), deep level transient spectroscopy (DLTS), micro-Fourier-transform infrared spectroscopy (FTIR), and preferential... (Read more)
- 932. J. Appl. Phys. 93, 9659 (2003) , “Spin-dependent recombination electron paramagnetic resonance spectroscopy of defects in irradiated silicon detectors”, V. Eremin, D. S. Poloskin, E. Verbitskaya, M. P. Vlasenko, and L. S. VlasenkoSpin-dependent recombination (SDR) electron paramagnetic resonance (EPR) spectroscopy is applied for investigation of paramagnetic recombination centers in irradiated silicon pn junction detectors (diodes) formed on float-zone (FZ) silicon wafers. The main radiation defects,... (Read more)
- 933. J. Appl. Phys. 93, 9395 (2003) , “Dislocation loop evolution in ion implanted 4H–SiC”, P. O. Å. Persson and L. Hultman4HSiC epilayers were implanted with 27Al in doses from 1.3×1014 cm2 to 7.8×1014 cm2. Dislocation loop formation after high-temperature annealing was studied by plan-view transmission electron microscopy and... (Read more)
- 934. J. Appl. Phys. 93, 930 (2003) , “Effects of annealing ambient on the formation of compensation defects in InP”, A. H. DengPositron annihilation lifetime (PAL) and photoinduced current transient spectroscopies (PICTS) have been employed to study the formation of compensation defects in undoped InP under different annealing processes with pure phosphorus (PP) ambience and iron phosphide (IP) ambience, respectively. The... (Read more)
- 935. J. Appl. Phys. 93, 9104 (2003) , “Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy”, Sung-Yong Chung, Niu Jin, Anthony T. Rice, and Paul R. BergerDeep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n+-p junctions... (Read more)
- 936. J. Appl. Phys. 93, 8995 (2003) , “Photoluminescence and damage recovery studies in Fe-implanted ZnO single crystals”, T. Monteiro, C. Boemare, and M. J. SoaresWe report Fe3+-related emission in ion-implanted ZnO single crystals. Iron ions were implanted at room temperature with 100 keV and a fluence of 1×1016 Fe+/cm2, and were submitted to annealing treatments in vacuum and in air. After implantation, the... (Read more)
- 937. J. Appl. Phys. 93, 8975 (2003) , “Infrared absorption bands associated with native defects in ZnGeP2”, N. C. Giles, Lihua Bai, M. M. Chirila, N. Y. Garces, and K. T. StevensAn optical absorption investigation from 10 to 296 K has been performed on bulk crystals of ZnGeP2 grown by the horizontal-gradient-freeze method. We identify three broad absorption bands in the spectral range from 1 to 4 µm that are due to native defects. At low temperature, a band... (Read more)
- 938. J. Appl. Phys. 93, 8926 (2003) , “Behavior of oxidation-induced stacking faults in annealed Czochralski silicon doped by nitrogen”, Deren Yang, Jia Chu, Jin Xu, and Duanlin QueAfter oxidation at 1150 °C, oxidation-induced stacking faults (OSFs) in nitrogen-doped Czochralski crystal silicon (NCZSi) preannealed at 750 °C for 16 h followed by annealing at 1100 °C were investigated. It was observed that the size of OSFs in NCZSi samples was larger than... (Read more)
- 939. J. Appl. Phys. 93, 753 (2003) , “Formation and passivation kinetics of gold-hydrogen complexes in n-type silicon”, A. ZamoucheReverse- and zero-bias annealing kinetics of Au-related deep levels in Au diffused P-doped silicon hydrogenated by wet chemical etching, have been determined. The dynamic behavior of these deep levels can enable an estimation of the number of hydrogen atoms in the defects. Differences in the dynamic... (Read more)
- 940. J. Appl. Phys. 93, 6095 (2003) , “Nitrogen-related electron traps in Ga(As,N) layers (3% N)”, P. KrispinCapacitance spectroscopy is used to examine the compositional dependence of deep levels in Si-doped Ga(As,N) layers grown on GaAs. We find two predominant electron traps at about 0.80 and 1.1 eV above the valence band edge EV, which do not depend on composition. For N... (Read more)
- 941. J. Appl. Phys. 93, 6056 (2003) , “Light-induced defects in KTaO3”, V. V. Laguta, M. D. Glinchuk, and I. P. BykovPhotoconductivity (PC), thermally stimulated conductivity (TSC), photoluminescence (PL), thermoluminescence (TL), and electron spin resonance (ESR) measurements have been made on single crystals of potassium tantalate over the temperature range 4.2290 K. We revealed two sorts of... (Read more)
- 942. J. Appl. Phys. 93, 5905 (2003) , “Effects of ion implantation on electron centers in hydrogenated amorphous carbon films”, A. A. Konchits, M. Ya. Valakh, B. D. Shanina, S. P. Kolesnik, and I. B. YanchukElectron spin resonance (ESR) and Raman spectra measurements are carried out on a-C:H and a-C:H:N films both as grown and implanted with W and Ni ions with doses ranged from 0.5×1015 to 1.2×1016 cm2. The as-grown films have small... (Read more)
- 943. J. Appl. Phys. 93, 5388 (2003) , “Electrical and optical properties of Cr and Fe implanted n-GaN”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, N. V. Pashkova, and A. A. ShlenskyDeep levels introduced into n-GaN films by Fe and Cr implantation have been studied by means of optical absorption and microcathodoluminescence spectroscopy measurements and by deep level transient spectroscopy, admittance spectroscopy, and capacitance-voltage profiling. The results are... (Read more)
- 944. J. Appl. Phys. 93, 5302 (2003) , “Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy”, Tooru Tanaka, Kazuki Hayashida, Mitsuhiro Nishio, Qixin Guo, and Hiroshi OgawaPhotoluminescence (PL) properties of I-doped ZnTe homoepitaxial layers grown by atmospheric pressure metalorganic vapor phase epitaxy have been investigated as a function of n-butyliodide (n-BuI) transport rate. The PL spectrum changed drastically even when a low dopant transport rate... (Read more)
- 945. J. Appl. Phys. 93, 5140 (2003) , “GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation”, I. Usov and N. ParikhGaN films were implanted with 150 keV Ar+ at temperatures up to 1100 °C to a dose of 3×1015 cm2. Concentration profiles of Ar were measured by secondary ion mass spectroscopy and depth distributions of ion-induced damage were estimated from Rutherford... (Read more)
- 946. J. Appl. Phys. 93, 5118 (2003) , “High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon”, N. Abdelgader and J. H. Evans-FreemanA combination of high resolution Laplace deep level transient spectroscopy (LDLTS) and direct capture cross-section measurements has been used to investigate whether deep electronic states related to interstitial-type defects introduced by ion implantation originated from point or extended defects,... (Read more)
- 947. J. Appl. Phys. 93, 4708 (2003) , “Electrically active defects in n-type 4H–silicon carbide grown in a vertical hot-wall reactor”, J. Zhang, L. Storasta, J. P. Bergman, N. T. Son, and E. JanzénWe have studied intrinsic and impurity related defects in silicon carbide (SiC) epilayers grown with fast epitaxy using chemical vapor deposition in a vertical hot-wall reactor. Using capacitance transient techniques, we have detected low concentrations of electron traps (denoted as Z1/2,... (Read more)
- 948. J. Appl. Phys. 93, 4590 (2003) , “Diffusion of deuterium (hydrogen) in previously hydrogenated (deuterated) III–V semiconductors”, Bertr, Theys, and François JomardHydrogenated (deuterated) C-doped GaAs and Zn-doped InP layers have been exposed to a deuterium (hydrogen) plasma. Diffusion profiles have been measured by secondary ion mass spectroscopy and compared to those obtained after exposure of as-grown (without any previous plasma treatment) samples in... (Read more)
- 949. J. Appl. Phys. 93, 4331 (2003) , “Pb-type interface defects in (100)Si/SiO2 structures grown in ozonated water solution”, D. Pierreux and A. StesmansSi dangling bond interface defects (Pb0,Pb1) were probed by electron spin resonance in entities of (100)Si with ultrathin SiO2 grown in ozonated de-ionized water solution at room temperature. After photodesorption of passivating hydrogen,... (Read more)
- 950. J. Appl. Phys. 93, 4097 (2003) , “Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO”, Jiaping HanThe dielectric properties of Mn-doped ZnO ceramics with electrically active grain boundaries at low temperatures of 1070 K were investigated by admittance spectroscopy. It was observed that the dielectric relaxation of the main shallow donors, zinc interstitial, in these samples occurred in... (Read more)
- 951. J. Appl. Phys. 93, 3971 (2003) , “Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing”, P. K. HurleyIn this work, an experimental study of defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA) in a nitrogen ambient at 1040 °C is presented. From a combined analysis using electron spin resonance and quasistatic capacitancevoltage characterization, the... (Read more)
- 952. J. Appl. Phys. 93, 3674 (2003) , “Self-diffusion of Si in thermally grown SiO2 under equilibrium conditions”, Tomonori Takahashi, Shigeto Fukatsu, and Kohei M. ItohSelf-diffusion coefficients of Si in thermally grown SiO2 on a semiconductor-grade silicon wafer have been determined at temperatures between 1150 and 1300 °C under equilibrium conditions using isotope heterostructures (natSiO2/28SiO2). Si... (Read more)
- 953. J. Appl. Phys. 93, 3635 (2003) , “Effects of oxygen contamination on diffusion length in p+–n GaInNAs solar cells”, A. Balcioglu, R. K. Ahrenkiel, and D. J. FriedmanWe have studied deep level impurities in p+n GaInNAs solar cells using secondary ion mass spectroscopy (SIMS), capacitancevoltage (CV), and deep-level transient spectroscopy (DLTS). These films were grown by atmospheric and low-pressure... (Read more)
- 954. J. Appl. Phys. 93, 3315 (2003) , “Electron paramagnetic resonance characterization of Cr3+ impurities in a β-Ga2O3 single crystal”, T. H. Yeom, I. G. Kim, and S. H. Leeβ-Ga2O3 single crystals doped with the Cr3+ ion were grown in an O2 atmosphere using the floating zone method. Electron paramagnetic resonance (EPR) spectra of the Cr3+ ion were recorded with an X band EPR spectrometer at 20 °C.... (Read more)
- 955. J. Appl. Phys. 93, 3234 (2003) , “Characterization of deep level traps responsible for isolation of proton implanted GaAs”, H. Boudinov and A. V. P. CoelhoDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects... (Read more)
- 956. J. Appl. Phys. 93, 3228 (2003) , “Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams”, Akira Uedono, Toshiki Mori, Kunitomo Morisawa, and Kouichi MurakamiHydrogen-terminated vacancies in Si+-implanted Si were studied by means of positron annihilation. After the Si+-ion implantation, hydrogen atoms were introduced into the damaged region using a hydrogen plasma [hydrogen-atom treatment (HAT)]. Monoenergetic positron beams were... (Read more)
- 957. J. Appl. Phys. 93, 2719 (2003) , “Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC”, K. McDonald, R. A. Weller, S. T. Pantelides, and L. C. FeldmanThe relationship between nitrogen content and interface trap density (Dit) in SiO2/4HSiC near the conduction band has been quantitatively determined. Nitridation using NO significantly reduces Dit near the conduction band, but the effect saturates... (Read more)
- 958. J. Appl. Phys. 93, 2481 (2003) , “Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam”, A. UedonoZinc oxide (ZnO) thin films grown on ScAlMgO4 substrates were characterized by means of positron annihilation. We measured Doppler broadening spectra of annihilation radiation and photoluminescence spectra for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO.... (Read more)
- 959. J. Appl. Phys. 93, 2449 (2003) , “Defect evolution of low energy, amorphizing germanium implants in silicon”, A. C. King, A. F. Gutierrez, A. F. Saavedra, and K. S. JonesThe defect evolution upon annealing of low energy, amorphizing germanium implants into silicon was studied using plan-view transmission electron microscopy. Implants with energies of 530 keV at an amorphizing dose of 1×1015 Ge + cm2 were annealed... (Read more)
- 960. J. Appl. Phys. 93, 231 (2003) , “Helium implantation defects in SiC: A thermal helium desorption spectrometry investigation”, E. Oliviero, M. F. Beaufort, and J. F. BarbotThermal helium desorption spectrometry was used to characterized helium implantation-induced defects in SiC. 6HSiC, 4HSiC, and βSiC samples were implanted with helium at energies ranging from 100 to 3 keV and doses ranging from 1×1013 to... (Read more)
- 961. J. Appl. Phys. 93, 2301 (2003) , “Electrical and optical properties of n- and p-InSe doped with Sn and As”, S. ShigetomiThe impurity levels in Sn- and As-doped InSe have been investigated by photoluminescence (PL), photoacoustic (PA), and Hall effect measurements. The carrier transport in the Sn-doped n-type sample is governed by the donor level at 0.06 eV below the conduction band. Moreover, this donor level... (Read more)
- 962. J. Appl. Phys. 93, 2289 (2003) , “Erbium-related band gap states in 4H– and 6H–silicon carbide”, G. Pasold, F. Albrecht, J. Grillenberger, U. Grossner, C. Hülsen, and W. WitthuhnThe band gap states of erbium (Er) in 4H and 6Hsilicon carbide (SiC) were investigated by means of deep level transient spectroscopy (DLTS). The samples were doped with Er by ion implantation followed by thermal annealing procedures. The DLTS measurements with the stable 167Er... (Read more)
- 963. J. Appl. Phys. 93, 143 (2003) , “Platinum-related defects in silicon observed by optical absorption measurements”, N. Fukata, M. Suezawa, and K. SaitoWe investigated platinum (Pt)-related defects in silicon (Si) based on the measurement of their optical absorption and found optical absorption peaks related to Pt clusters. Pt and H were separately doped in FZSi by heating at 10001300 °C followed by quenching in water. Optical... (Read more)
- 964. J. Appl. Phys. 93, 1428 (2003) , “Indium segregation to dislocation loops induced by ion implantation damage in silicon”, Taiji NodaIndium segregation to dislocation loops and indium co-diffusion were investigated using secondary ion mass spectrometry (SIMS) and a physically-based diffusion model. High doses of As (30 keV, 1×1015 cm2) and B (5 keV, 1×1015 cm2) were... (Read more)
- 965. J. Appl. Phys. 93, 1069 (2003) , “Influence of contamination on the dislocation-related deep level C1 line observed in deep-level-transient spectroscopy of n-type silicon: A comparison with the technique of electron-beam-induced current”, Klaus Knobloch, Martin Kittler, and Winfried SeifertMisfit dislocations containing different amounts of contamination were analyzed by deep-level-transient spectroscopy (DLTS). The amount of dislocation contamination was determined from the temperature dependence of the dislocation contrast, c(T), measured by electron-beam-induced... (Read more)
- 966. J. Appl. Phys. 93, 10110 (2003) , “Silicon nanocrystals and defects produced by silicon and silicon-and-gold implantation in silica”, C. BarthouHigh-purity silica samples were implanted at room temperature with 2-MeV Si ions or sequentially with 2-MeV Si and 10-MeV Au ions. Three photoluminescence bands associated with the presence of defects are identified in the as-implanted samples. After a heat treatment at 1100 °C, a line appears... (Read more)
- 967. J. Appl. Phys. 96, 747 (2004) , “Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy”, Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, and Paul R. BergerDeep-level transient spectroscopy (DLTS) measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy (LT-MBE) at 320 °C. In the LT-MBE as-grown samples, two dominant... (Read more)
- 968. J. Appl. Phys. 96, 6789 (2004) , “The role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes”, Koji KatayamaThe role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes under operation was investigated. The generation rate of microscopic dark spots, which do not correspond to the original stacking faults or threading dislocations in the epilayer, was found to... (Read more)
- 969. J. Appl. Phys. 96, 530 (2004) , “Properties of arsenic antisite defects in Ga1–xMnxAs”, A. Wolos and M. KaminskaWe report the results of optical absorption measurements on Ga1xMnxAs layers grown by low-temperature molecular beam epitaxy. In the paramagnetic layers grown at very low temperatures (below 250 °C) the experiments reveal an absorption band at 1.2 eV... (Read more)
- 970. J. Appl. Phys. 96, 4960 (2004) , “Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions”, I. O. UsovThe diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C... (Read more)
- 971. J. Appl. Phys. 96, 4909 (2004) , “Deep levels created by low energy electron irradiation in 4H-SiC”, L. Storasta, J. P. Bergman, E. Janzén, and A. HenryWith low energy electron irradiation in the 80250 keV range, we were able to create only those intrinsic defects related to the initial displacements of carbon atoms in the silicon carbide lattice. Radiation induced majority and minority carrier traps were analyzed using capacitance transient... (Read more)
- 972. J. Appl. Phys. 96, 3687 (2004) , “Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon”, Daniel MacdonaldThe impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 1013 cm2 resulted in no... (Read more)
- 973. J. Appl. Phys. 96, 320 (2004) , “Passivation of double-positioning twin boundaries in CdTe”, Yanfa Yan, M. M. Al-Jassim, and K. M. JonesWe present density-functional total-energy calculations to investigate the passivation effects of impurity elements such as Br, Cl, S, O, H, and Na on double-positioning twin boundaries in CdTe. We find that Br, Cl, S, and O atoms present passivation effects on the boundaries with different degrees,... (Read more)
- 974. J. Appl. Phys. 96, 1563 (2004) , “Electrical properties of GaSe doped with Er”, Yu-Kuei Hsu and Chen-Shiung ChangMeasurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×10176×1017... (Read more)
- 975. J. Appl. Phys. 96, 1341 (2004) , “Assignment of deep levels causing yellow luminescence in GaN”, C. B. Soh, S. J. Chua, and H. F. LimThe deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ~18, ~35, and ~70 meV, which are respectively... (Read more)
- 976. J. Appl. Phys. 95, 913 (2004) , “Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam”, A. UedonoPositron annihilation was used to probe vacancy-type defects in electroplated Cu films. Doppler broadening spectra of the annihilation radiation for Cu films deposited on samples with a Ta(20 nm)/SiO2(100 nm)/Si structure were measured with a monoenergetic positron beam. For an... (Read more)
- 977. J. Appl. Phys. 95, 8469 (2004) , “Self-diffusion of 12C and 13C in intrinsic 4H–SiC”, M. K. Linnarsson and M. S. JansonSelf-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4HSiC has been studied using secondary ion mass spectrometry. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, have been prepared by... (Read more)
- 978. J. Appl. Phys. 95, 8092 (2004) , “Determination of functional center local environment in copper-modified Pb[Zr0.54Ti0.46]O3 ceramics”, Rüdiger-A. EichelFerroelectric copper(II)-modified polycrystalline Pb[Zr0.54Ti0.46]O3 ceramics with a dopant concentration of 0.25 mol % were investigated by means of electron paramagnetic resonance and hyperfine sublevel correlation spectroscopy. Special emphasis was put on the... (Read more)
- 979. J. Appl. Phys. 95, 69 (2004) , “Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes”, Souvick Mitra and Mulpuri V. RaoPlanar n+p and p+n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance... (Read more)
- 980. J. Appl. Phys. 95, 6092 (2004) , “Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation”, D. Nobili, S. Solmi, and M. FerriCarrier density and mobility measurements were performed on heavily arsenic-doped silicon-on-insulator specimens after 2 MeV implantation of Si+ ions. It is found that implantation induces a marked reduction of the electron density, which increases with the concentration of active dopant,... (Read more)
- 981. J. Appl. Phys. 95, 57 (2004) , “Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling”, M. S. JansonThe defect distributions in 11B-, 14N-, and 27Al-implanted epitaxial 4HSiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are... (Read more)
- 982. J. Appl. Phys. 95, 4752 (2004) , “Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen”, F. Volpi and A. R. PeakerWe present a study of the electrically active defects produced in p-type silicon crystals underneath a titanium layer deposited by sputtering to form a Schottky contact. The defects were investigated by Deep Level Transient Spectroscopy and free carrier profiles were determined by... (Read more)
- 983. J. Appl. Phys. 95, 4728 (2004) , “Electrically active defects in irradiated 4H-SiC”, M. L. David4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350400 K. Indeed, the application of an electric field has been found... (Read more)
- 984. J. Appl. Phys. 95, 4655 (2004) , “Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon”, M. Ikeda, M. Nakagawa, R. Mitsusue, S. Kondo, and N. ImanishiUsing ion implantation techniques, we have studied the trapping, detrapping, and diffusion of H in SiO2 containing a high density of defects and a high concentration of excess Si. In SiO2 sample implanted with Si and H, the implanted H moves toward the surface after stopping at... (Read more)
- 985. J. Appl. Phys. 95, 3404 (2004) , “Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons”, M. Fujinami, T. Miyagoe, and T. SawadaDefects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron... (Read more)
- 986. J. Appl. Phys. 95, 3385 (2004) , “Optical investigations on the annealing behavior of gallium- and nitrogen-implanted ZnO”, F. ReussGallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The... (Read more)
- 987. J. Appl. Phys. 95, 2532 (2004) , “Electrical resistivity of acceptor carbon in GaAs”, A. Ferreira da Silva and I. PepeThe electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm3. Good agreement was obtained between the measured... (Read more)
- 988. J. Appl. Phys. 94, 7567 (2003) , “Electron paramagnetic resonance of Cr2+ and Cr4+ ions in CdGeAs2 crystals”, N. Y. Garces, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate chromium ions in single crystals of CdGeAs2 grown by the horizontal gradient freeze technique. Signals from Cr2+ and Cr4+ ions were observed near 12 K. The Cr2+ ions have the... (Read more)
- 989. J. Appl. Phys. 94, 7470 (2003) , “Defect assessment of Mg-doped GaN by beam injection techniques”, C. Díaz-Guerra and J. PiquerasThe electronic recombination properties of Mg-doped GaN have been investigated by steady state and time-resolved cathodoluminescence (TRCL) in the scanning electron microscope, photocurrent (PC) spectroscopy, and optical beam induced current (OBIC). CL and OBIC maps reveal an inhomogeneous... (Read more)
- 990. J. Appl. Phys. 94, 7112 (2003) , “Dynamic annealing in ion implanted SiC: Flux versus temperature dependence”, A. Yu. KuznetsovA strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si+ ions were implanted into bulk 4H-SiC wafers using different ion fluxes... (Read more)
- 991. J. Appl. Phys. 97, 023505 (2005) , “Nickel solubility in intrinsic and doped silicon”, A. A. Istratov and P. ZhangSolubility of nickel in intrinsic, moderately, and heavily doped n-type and p-type silicon was determined using instrumental neutron activation analysis. The solubility data for intrinsic silicon were found to be in good agreement with the literature data. In heavily doped... (Read more)
- 992. J. Appl. Phys. 97, 013528 (2005) , “Production and recovery of defects in phosphorus-implanted ZnO”, Z. Q. Chen, A. Kawasuso, Y. Xu, and H. NaramotoPhosphorus ions were implanted in ZnO single crystals with energies of 50380 keV having total doses of 4.2×10134.2×1015 cm2. Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These... (Read more)
- 993. J. Appl. Phys. 97, 093517 (2005) , “Interaction of defects and H in proton-irradiated GaN(Mg, H)”, S. M. Myers and C. H. SeagerMagnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of... (Read more)
- 994. J. Appl. Phys. 97, 084913 (2005) , “Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition”, H. J. Chung, A. Y. Polyakov, S. W. Huh, S. Nigam, and M. SkowronskiHigh-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor (silicon tetrachloride) and a carbon precursor (propane). Typical growth rates were between 100 and 300 ... (Read more)
- 995. J. Appl. Phys. 97, 063511 (2005) , “Positron beam studies of argon-irradiated polycrystal α-Zr”, Chunlan ZhouDoppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated α-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the... (Read more)
- 996. J. Appl. Phys. 97, 056101 (2005) , “Triplet recombination at Pb centers and its implications for capture cross sections”, Felice Friedrich, Christoph Boehme, and Klaus LipsPulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Si) (111) to silicon dioxide (SiO2) interface can cause recombination of strongly coupled spin pairs in singlet and triplet... (Read more)
- 997. J. Appl. Phys. 97, 043504 (2005) , “Photoluminescence of mechanically polished ZnO”, D. W. Hamby, D. A. Lucca, and M. J. KlopfsteinThe effects of mechanical polishing on the photoluminescence (PL) from each polar face of wurtzite-structure ZnO are presented. Differences observed for the 4.2 K PL of a mechanically polished surface when compared to that of a chemomechanically polished surface include broadened bound-exciton... (Read more)
- 998. J. Appl. Phys. 98, 053704 (2005) , “Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon”, A. Armstrong and A. R. ArehartThe impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level... (Read more)
- 999. J. Appl. Phys. 98, 043709 (2005) , “Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001)”, Y. Negoro, T. Kimoto, and H. MatsunamiElectrical behavior of implanted Al and B near implant-tail region in 4HSiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by... (Read more)
- 1000. J. Appl. Phys. 98, 043518 (2005) , “Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide”, G. Alfieri, E. V. Monakhov, and B. G. SvenssonThe annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature... (Read more)
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