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- 901. J. Appl. Phys. 96, 747 (2004) , “Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy”, Sung-Yong Chung, Niu Jin, Ryan E. Pavlovicz, and Paul R. BergerDeep-level transient spectroscopy (DLTS) measurements were performed in order to investigate the effects of post-growth heat treatment on deep level defects in Si layers grown by low-temperature molecular-beam epitaxy (LT-MBE) at 320 °C. In the LT-MBE as-grown samples, two dominant... (Read more)
- 902. J. Appl. Phys. 96, 6789 (2004) , “The role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes”, Koji KatayamaThe role of N-related point defects in the degradation process of ZnSe-based white light-emitting diodes under operation was investigated. The generation rate of microscopic dark spots, which do not correspond to the original stacking faults or threading dislocations in the epilayer, was found to... (Read more)
- 903. J. Appl. Phys. 96, 5613 (2004) , “Effects of high-temperature anneals on 4H–SiC Implanted with Al or Al and Si”, K. A. Jones, P. B. Shah, T. S. Zheleva, M. H. Ervin, M. A. Derenge, J. A. Freitas, S. Harmon, J. McGee, R. D. VisputeCo-implanting Si into 4HSiC with Al hinders the ability of the Al acceptors to activate electrically at the lower annealing temperatures, but for annealing temperatures > 1600 °C, the effect is much less, suggesting that the activation energy for incorporating Al as an acceptor no longer... (Read more)
- 904. J. Appl. Phys. 96, 5484 (2004) , “Defect levels and types of point defects in high-purity and vanadium-doped semi-insulating 4H–SiC”, M. E. Zvanut, V. V. Konovalov, Haiyan Wang, W. C. Mitchel, W. D. Mitchell, G. LandisElectron paramagnetic resonance (EPR) spectroscopy and photo-induced EPR are used to examine the point defects in vanadium-doped 4HSiC and high-purity semi-insulating (HPSI) 4HSiC grown by physical vapor transport. Both types of samples often exhibit a 1.1-eV activation energy,... (Read more)
- 905. J. Appl. Phys. 96, 530 (2004) , “Properties of arsenic antisite defects in Ga1–xMnxAs”, A. Wolos and M. KaminskaWe report the results of optical absorption measurements on Ga1xMnxAs layers grown by low-temperature molecular beam epitaxy. In the paramagnetic layers grown at very low temperatures (below 250 °C) the experiments reveal an absorption band at 1.2 eV... (Read more)
- 906. J. Appl. Phys. 96, 4960 (2004) , “Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions”, I. O. UsovThe diffusion behavior of boron (B) and nitrogen (N) implanted in 6H and 4H silicon carbide (SiC) samples was investigated using secondary ion mass spectroscopy. The samples were either coimplanted with B and N ions or implanted with each element alone. The annealing was performed at 1700 °C... (Read more)
- 907. J. Appl. Phys. 96, 4909 (2004) , “Deep levels created by low energy electron irradiation in 4H-SiC”, L. Storasta, J. P. Bergman, E. Janzén, and A. HenryWith low energy electron irradiation in the 80250 keV range, we were able to create only those intrinsic defects related to the initial displacements of carbon atoms in the silicon carbide lattice. Radiation induced majority and minority carrier traps were analyzed using capacitance transient... (Read more)
- 908. J. Appl. Phys. 96, 4189 (2004) , “Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy”, Makoto Yoshida, Kensaku Hiraka, Hitoshi Ohta, Yasufumi Fujiwara, Atsushi Koizumi, Yoshikazu TakedaElectron spin resonance (ESR) measurements of GaAs:Er,O grown by organometallic vapor phase epitaxy have been performed at 9.49 GHz from 4.5 to 13 K. Several anisotropic ESR signals (A, B, C, and D) are observed, which is consistent with the previous reports. We... (Read more)
- 909. J. Appl. Phys. 96, 3721 (2004) , “Fluorine-enhanced boron deffusion induced by fluorine postimplantation in silicon”, Taiji NodaIn this article, the postimplanted fluorine effect on boron transient-enhanced diffusion (TED) and dose loss during a 750°C annealing is shown. 19F implants at 2 keV, after 11B implant at an energy of 1 keV,3×1014/cm2, have been investigated in... (Read more)
- 910. J. Appl. Phys. 96, 3687 (2004) , “Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon”, Daniel MacdonaldThe impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 1013 cm2 resulted in no... (Read more)
- 911. J. Appl. Phys. 96, 320 (2004) , “Passivation of double-positioning twin boundaries in CdTe”, Yanfa Yan, M. M. Al-Jassim, and K. M. JonesWe present density-functional total-energy calculations to investigate the passivation effects of impurity elements such as Br, Cl, S, O, H, and Na on double-positioning twin boundaries in CdTe. We find that Br, Cl, S, and O atoms present passivation effects on the boundaries with different degrees,... (Read more)
- 912. J. Appl. Phys. 96, 2878 (2004) , “Influence of crystal defects on the piezoresistive properties of 3C–SiC”, M. Eickhoff and M. StutzmannWe present a model for the quantitative assessment of the influence of crystal defects on the piezoresistive properties of n-type cubic silicon carbide. In an extended carrier trapping model, the strain dependent transport at potential barriers formed by electrons in defect states at internal... (Read more)
- 913. J. Appl. Phys. 96, 2406-2408 (2004) , “Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC”, Z. Zolnai, N. T. Son, C. Hallin, and E. JanzénElectron paramagnetic resonance (EPR) was used to study the annealing behavior of the positively charged carbon vacancy (EI5 center) in electron-irradiated 4H-SiC. At ~1000 °C the EPR signal of the defect starts decreasing gradually. Clear ligand hyperfine structure is still observed after... (Read more)
- 914. J. Appl. Phys. 96, 1563 (2004) , “Electrical properties of GaSe doped with Er”, Yu-Kuei Hsu and Chen-Shiung ChangMeasurements of the Hall effect and Er-related luminescence were made on Er-doped GaSe. Deep-level transient spectroscopy (DLTS) was also performed. Hall measurements show that hole concentrations of 0.2%, 0.5%, and 1% Er-doped GaSe samples are 1.5×10176×1017... (Read more)
- 915. J. Appl. Phys. 96, 1458 (2004) , “Self-diffusion in isotopically enriched silicon carbide and its correlation with dopant diffusion”, K. Rüschenschmidt, H. Bracht, N. A. Stolwijk, M. Laube, G. Pensl, G. R. BrandesDiffusion of 13C and 30Si in silicon carbide was performed with isotopically enriched 4H-28Si12C/natSiC heterostructures which were grown by chemical vapor phase epitaxy. After diffusion annealing at temperatures between 2000°C and... (Read more)
- 916. J. Appl. Phys. 96, 1341 (2004) , “Assignment of deep levels causing yellow luminescence in GaN”, C. B. Soh, S. J. Chua, and H. F. LimThe deep levels in GaN associated with yellow luminescence transitions have been investigated using photoluminescence, Hall measurements, and deep level transient spectroscopy (DLTS). Hall measurements on Si-doped GaN show the presence of donor levels at ~18, ~35, and ~70 meV, which are respectively... (Read more)
- 917. J. Appl. Phys. 95, 913 (2004) , “Vacancy-type defects in electroplated Cu films probed by using a monoenergetic positron beam”, A. UedonoPositron annihilation was used to probe vacancy-type defects in electroplated Cu films. Doppler broadening spectra of the annihilation radiation for Cu films deposited on samples with a Ta(20 nm)/SiO2(100 nm)/Si structure were measured with a monoenergetic positron beam. For an... (Read more)
- 918. J. Appl. Phys. 95, 8469 (2004) , “Self-diffusion of 12C and 13C in intrinsic 4H–SiC”, M. K. Linnarsson and M. S. JansonSelf-diffusion of carbon (12C and 13C) in low-doped (intrinsic) 4HSiC has been studied using secondary ion mass spectrometry. A two layer 13C enriched structure with 13C/12C ratios of 0.01 and 0.1, respectively, have been prepared by... (Read more)
- 919. J. Appl. Phys. 95, 8092 (2004) , “Determination of functional center local environment in copper-modified Pb[Zr0.54Ti0.46]O3 ceramics”, Rüdiger-A. EichelFerroelectric copper(II)-modified polycrystalline Pb[Zr0.54Ti0.46]O3 ceramics with a dopant concentration of 0.25 mol % were investigated by means of electron paramagnetic resonance and hyperfine sublevel correlation spectroscopy. Special emphasis was put on the... (Read more)
- 920. J. Appl. Phys. 95, 69 (2004) , “Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodes”, Souvick Mitra and Mulpuri V. RaoPlanar n+p and p+n junction diodes, fabricated in 4H-SiC epitaxial layers using a double-implantation technology (a deep-range acceptor followed by a shallow-range donor implantation and vice versa), are characterized using capacitance... (Read more)
- 921. J. Appl. Phys. 95, 6092 (2004) , “Recovery of the carrier density in arsenic-doped silicon after high energy (2 MeV) Si+ implantation”, D. Nobili, S. Solmi, and M. FerriCarrier density and mobility measurements were performed on heavily arsenic-doped silicon-on-insulator specimens after 2 MeV implantation of Si+ ions. It is found that implantation induces a marked reduction of the electron density, which increases with the concentration of active dopant,... (Read more)
- 922. J. Appl. Phys. 95, 57 (2004) , “Vacancy-related defect distributions in 11B-, 14N-, and 27Al-implanted 4H–SiC: Role of channeling”, M. S. JansonThe defect distributions in 11B-, 14N-, and 27Al-implanted epitaxial 4HSiC are studied using monoenergetic positron beams. At least three types of defects are needed to account for the Doppler broadening annihilation spectra and two of the defects are... (Read more)
- 923. J. Appl. Phys. 95, 490 (2004) , “Surface-state origin for the blueshifted emission in anodically etched porous silicon carbide”, Tilghman L. Rittenhouse, Paul W. Bohn, Tim K. Hossain, Ilesanmi Adesida, James Lindesay, Alfred MarcusAnodic etching of SiC yields a highly monodisperse distribution of nanometer dimension porous structures which extend to a significant depth. Cathodoluminescence (CL) studies of the porous layers yield luminescence peaks in the UV region, above the band gap energy of bulk SiC. Higher etching current... (Read more)
- 924. J. Appl. Phys. 95, 4752 (2004) , “Electrically active defects induced by sputtering deposition on silicon: The role of hydrogen”, F. Volpi and A. R. PeakerWe present a study of the electrically active defects produced in p-type silicon crystals underneath a titanium layer deposited by sputtering to form a Schottky contact. The defects were investigated by Deep Level Transient Spectroscopy and free carrier profiles were determined by... (Read more)
- 925. J. Appl. Phys. 95, 4728 (2004) , “Electrically active defects in irradiated 4H-SiC”, M. L. David4H-SiC epilayers were irradiated with either protons or electrons and electrically active defects were studied by means of deep level transient spectroscopy. Motion of defects has been found to occur at temperature as low as 350400 K. Indeed, the application of an electric field has been found... (Read more)
- 926. J. Appl. Phys. 95, 4655 (2004) , “Hydrogen behavior in SiO2 with high density of defects and locally concentrated silicon”, M. Ikeda, M. Nakagawa, R. Mitsusue, S. Kondo, and N. ImanishiUsing ion implantation techniques, we have studied the trapping, detrapping, and diffusion of H in SiO2 containing a high density of defects and a high concentration of excess Si. In SiO2 sample implanted with Si and H, the implanted H moves toward the surface after stopping at... (Read more)
- 927. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 928. J. Appl. Phys. 95, 4012 (2004) , “Effects of implantation temperature on damage accumulation in Al-implanted 4H–SiC”, Y. Zhang, W. J. Weber, W. Jiang, C. M. Wang, V. Shutthanandan, A. HallénDamage accumulation in 4HSiC under 1.1 MeV Al22+" align="middle"> irradiation is investigated as a function of dose at temperatures from 150 to 450 K. Based on Rutherford backscattering spectroscopy and nuclear reaction analysis channeling spectra, the damage accumulation on... (Read more)
- 929. J. Appl. Phys. 95, 3404 (2004) , “Identification of vacancy–oxygen complexes in oxygen-implanted silicon probed with slow positrons”, M. Fujinami, T. Miyagoe, and T. SawadaDefects and their annealing behavior for low (2×1015/cm2) and high (1.7×1018/cm2) doses of 180 keV oxygen-implanted silicon have been investigated by the coincidence Doppler broadening (CDB) and lifetime measurements in variable-energy positron... (Read more)
- 930. J. Appl. Phys. 95, 3385 (2004) , “Optical investigations on the annealing behavior of gallium- and nitrogen-implanted ZnO”, F. ReussGallium and nitrogen ions have been implanted into ZnO crystals and metal organic vapor phase epitaxy grown ZnO layers. Postimplantation annealing behavior in the temperature range between 200 and 900 °C has been studied by means of Raman scattering and low-temperature photoluminescence. The... (Read more)
- 931. J. Appl. Phys. 95, 2532 (2004) , “Electrical resistivity of acceptor carbon in GaAs”, A. Ferreira da Silva and I. PepeThe electrical resistivity was investigated from room temperature down to 1.7 K for the shallow acceptor carbon in GaAs prepared by ion implantation with impurity concentrations between 1017 and 1019 cm3. Good agreement was obtained between the measured... (Read more)
- 932. J. Appl. Phys. 95, 1884-1887 (2004) , “Thermal activation of Mg-doped GaN as monitored by electron paramagnetic resonance spectroscopy”, M. E. Zvanut, D. M. Matlock, R. L. Henry, Daniel Koleske, Alma WickendenThe microscopic process involved with thermal activation of the Mg acceptors in GaN epitaxial films is investigated using electron paramagnetic resonance (EPR) spectroscopy. Samples were heat treated in dry N2 for 30 min at temperatures between 200 and 1000 °C. Below 850 °C, the... (Read more)
- 933. J. Cryst. Growth 264, 1-6 (2004) , “Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film”, Y. J. Park , C. S. Oh , T. H. Yeom, Y. M. YuWe have observed the nagnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the slsctron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In a steady-state spin-resonance experiment, a power PS=(M0=MZ)H/T1 is transferred to the systems(reservoirs) towards which the spins relax. Here, M0 is the equilibrium magnetization, MZ the component of the magnetization along the magnetic field H, and T1 the relaxation time. The reservoir of interest in our case is the kinetic energy of the eledtrons, and this is detected by an increase in the mobility μ. To our knowledge. this is the first observation of the power flow, due to relaxation, from the spins to a reservoir,applied to the ditection of magnetic resonance of conduction-electron spins. It differs in principle from usual spin-resonance observation methods, which are based on electromagnetic interactions of the spin system, such as the voltage induced in a resonator by the rotating magnetic moment, or again such as power absorption PS=MyHx from the rotating field Hx by the out-of- phase component My.Besides providing information on the relaxation mechanism, the present method (that we call "ralaxation" method) should also in some cases by much more sensitive than the usual "electromagnetic" detection methods. (Read more)
- 934. J. Phys. Chem. Solids 65, 639-645 (2004) , “Carbothermally-assisted aerosol synthesis of semiconducting materials in the system GaN/Mn”, Jerzy F. Janik , Mariusz Dryga , Cezary Czosnek , Maria Kamiska , Maria Palczewska and Robert T. PaineAerosol-assisted vapor phase synthesis aimed at preparation of magnetic semiconductor nanopowders of Ga1−xMnxN is carried out both from aqueous and methanol solution mixtures of gallium nitrate and manganese (II) nitrate. After an additional pyrolysis at 1000 °C under an ammonia flow,... (Read more)
- 935. J. Vac. Sci. Technol. B 22, 120-125 (2004) , “Properties of Fe-doped semi-insulating GaN structures”, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, S. J. PeartonThe properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 /square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at... (Read more)
- 936. Jpn. J. Appl. Phys. 43, 904 (2004) , “Characteristics of Irregular Forward Current Conduction in 4H-SiC pn Junction Diodes”, Takasumi Ohyanagi, Toshiyuki Ohno, Atsuo WatanabeSiC diodes show an irregular forward current conduction deviating from the standard diode theory, JF∝exp (VF), where JF is the forward current conduction density and VF is the forward voltage. However, it is not known... (Read more)
- 937. Jpn. J. Appl. Phys. 43, 1293 (2004) , “Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (11\bar20) 6H-SiC Substrates”, Taro Nishiguchi, Yasuichi Masuda, Satoru Ohshima, Shigehiro NishinoSublimation boule growth of 6H-SiC on (11bar20) 6H-SiC substrates was investigated. Hollow defects were generated in the crystals grown on (11bar20) substrates, and they penetrated along the growth direction to the as-grown surface. A new growth model of SiC on (11bar20) SiC substrates that... (Read more)
- 938. Jpn. J. Appl. Phys. 43, 1076 (2004) , “Structure of an Oxygen-Related Defect Complex in SiC Studied with Electron Energy-Loss Spectroscopy”, Shunsuke Muto, Hiroshi Sugiyama, Tomohiko Kimura, Tetsuo TanabeThe atomic configuration of an oxygen-related defect complex in a SiC crystal was determined with the analyses of the extended energy-loss fine structure (EXELFS) and energy-loss near-edge structure (ELNES) in the electron energy-loss spectroscopy (EELS) associated with a transmission electron... (Read more)
- 939. Mater. Sci. Eng. A 375-377, 620-624 (2004) , “Evolution of the microstructure of disperse ZnO powders obtained by the freeze-drying method”, Z. V. Marinkovic, O. Milosevic, M. V. Nikolic, M. G. Kakazey, M. V. Karpec, T. V. Tomila , M. M. RisticFreeze-drying, as a cryochemical powder processing method is applied in the synthesis of ZnO submicrometer to nanosized powders. The process involves rapid freezing of the sprayed precursor solution, drying under vacuum by sublimation of the solvent and salt decomposition to oxide by thermal... (Read more)
- 940. Mater. Sci. Forum 457-460, 465 (2004) , “EPR and pulsed ENDOR study of EI6 and related defects in 4H-SiC”, T. Umeda, Y. Ishitsuka, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya
- 941. Mater. Sci. Forum 457-460, 437 (2004) , “Defects in high-purity semi-insulating SiC”, N. T. Son, B. Magnusson, Z. Zolnai, A. Ellison, E. Janzén
- 942. Nature 430, 1009 (2004) , “Ultrahigh-quality silicon carbide single crystals”, Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Atsuto Okamoto, Hiroyuki Kondo, Shoichi Onda, Kazumasa TakatoriSilicon carbide (SiC) has a range of useful physical, mechanical and electronic properties that make it a promising material for next-generation electronic devices1,2. Careful consideration of the thermal conditions3-6 in which SiC {0001} is grown has resulted in improvements in crystal diameter and quality: the quantity of macroscopic defects such as hollow core dislocations (micropipes)7-9, inclusions, small-angle boundaries and longrange lattice warp has been reduced10,11. But some macroscopic defects (about 1–10 cm-2) and a large density of elementary dislocations (,104 cm-2), such as edge, basal plane and screw dislocations, remain within the crystal, and have so far prevented the realization of high-efficiency, reliable electronic devices in SiC (refs 12–16). Here we report a method, inspired by the dislocation structure of SiC grown perpendicular to the c-axis (a-face growth)17, to reduce the number of dislocations in SiC single crystals by two to three orders of magnitude, rendering them virtually dislocation-free. These substrates will promote the development of high-power SiC devices and reduce energy losses of the resulting electrical systems. (Read more)
- 943. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 944. Phys. Rev. B 70, 245204 (2004) , “Silicon vacancy annealing and DI luminescence in 6H-SiC”, M. V. B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, H. Overhof, and J.-M. SpaethCombining electron paramagnetic resonance measurements with ab initio calculations, we identify the VCCSi(SiCCSi) complex as a second annealing product of the silicon vacancy via an analysis of resolved carbon hyperfine interactions and of... (Read more)
- 945. Phys. Rev. B 70, 235212 (2004) , “EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC”, T. Umeda, J. Isoya, N. Morishita, T. Ohshima, T. Kamiya, A. Gali, P. Deák, N. T. Son, E. JanzénThe carbon vacancy is a dominant defect in 4H-SiC, and the "EI5" electron-paramagnetic-resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at quasicubic sites. The observed state for EI5, however, has been attributed to a... (Read more)
- 946. Phys. Rev. B 70, 235211 (2004) , “Structure and vibrational spectra of carbon clusters in SiC”, Alexander Mattausch, Michel Bockstedte, and Oleg PankratovThe electronic, structural, and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C- and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g.,... (Read more)
- 947. Phys. Rev. B 70, 235208 (2004) , “Interstitial nitrogen and its complexes in diamond”, J. P. Goss, P. R. Briddon, S. Papagiannidis, and R. JonesNitrogen, a common impurity in diamond, can be displaced into an interstitial location by irradiation. The resultant interstitial defects are believed to be responsible for a range of infrared and electronic transitions that vary in thermal stability, and on the type of diamond. Of particular... (Read more)
- 948. Phys. Rev. B 70, 205214 (2004) , “Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique”, W. Ulrici and B. ClerjaudIn LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm1 (T = 7 K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is... (Read more)
- 949. Phys. Rev. B 70, 205211 (2004) , “Ni-vacancy defect in diamond detected by electron spin resonance”, K. IakoubovskiiTrigonal S = 1 NOL1/NIRIM5 center has been characterized by electron spin resonance (ESR) in nickel and boron doped diamond grown by the high-pressure high-temperature technique. Hyperfine interaction structure has been detected and attributed to six equivalent carbon sites and one Ni site.... (Read more)
- 950. Phys. Rev. B 70, 205209 (2004) , “Deep acceptor states of platinum and iridium in 4H-silicon carbide”, J. Grillenberger, U. Grossner, B. G. Svensson, F. Albrecht, W. Witthuhn, R. SielemannBand gap states of platinum and iridium in the hexagonal polytype 4H of silicon carbide are investigated by means of deep level transient spectroscopy (DLTS) in n- as well as p-type epitaxial layers. To establish a definite chemical assignment of band gap states to Pt and Ir the... (Read more)
- 951. Phys. Rev. B 70, 205207 (2004) , “Hydrogen-related photoluminescent centers in SiC”, D. Prezzi, T. A. G. Eberlein, R. Jones, B. Hourahine, P. R. Briddon, S. ÖbergLocal density functional calculations are used to investigate models of the center responsible for a prominent set of luminescent lines with zero-phonon lines around 3.15 eV in hydrogen rich 4H-SiC and previously attributed to VSi-H. We find that the electronic structure of... (Read more)
- 952. Phys. Rev. B 70, 205203 (2004) , “Properties and formation mechanism of tetrainterstitial agglomerates in hydrogen-doped silicon”, Teimuraz Mchedlidze and Masashi SuesawaFor the tetrainterstitial agglomerate (I4), four additional silicon (Si) atoms are incorporated in an ordinary unit cell of Si lattice in such a manner that all atoms are four-coordinated and angles between bonds are not disturbed significantly. Microstructure, electrical... (Read more)
- 953. Phys. Rev. B 70, 205201 (2004) , “Interaction of hydrogen with boron, phosphorus, and sulfur in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchThe production of n-type doped diamond has proved very difficult. Phosphorus, and possibly sulfur, when in substitutional sites in the lattice, forms a donor which could be used in electronic devices. Boron, which is a relatively shallow acceptor, can be passivated by hydrogen, and it is... (Read more)
- 954. Phys. Rev. B 70, 201204(R) (2004) , “Annealing of vacancy-related defects in semi-insulating SiC”, U. Gerstmann, E. Rauls, and H. OverhofThe annealing of P6/P7 centers (VCCSi pairs) in the presence of carbon vacancies in high concentrations typical for semi-insulating (SI) silicon carbide (SiC) is studied theoretically. The calculated hyperfine parameters support the suggestion of a negatively... (Read more)
- 955. Phys. Rev. B 70, 195344 (2004) , “Ab initio study of structural and electronic properties of planar defects in Si and SiC”, C. Raffy, J. Furthmüller, J.-M. Wagner, and F. BechstedtWe present ab initio calculations for internal interfaces in Si and SiC. Density-functional calculations within the local-density approximation and the pseudopotential-plane-wave approach are performed to understand the effect of such two-dimensional defects on the electronic properties. We... (Read more)
- 956. Phys. Rev. B 70, 193207 (2004) , “Hyperfine interaction of the nitrogen donor in 4H-SiC”, N. T. Son, E. Janzén, J. Isoya, S. YamasakiShallow N donors in n-type 4H-SiC were studied by electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR). For the N donor at the cubic site (Nk) in 4H-SiC, the hyperfine (hf) constants of the interaction with the nearest-neighbor... (Read more)
- 957. Phys. Rev. B 70, 144111 (2004) , “Identification of Cr3+ centers in Cs2NaAlF6 and Cs2NaGaF6 crystals by EPR and ENDOR paramagnetic resonance techniques”, H. Vrielinck, F. Loncke, F. Callens, P. Matthys, and N. M. KhaidukovChromium-doped Cs2NaAlF6 and Cs2NaGaF6 crystals have been investigated by using the techniques of electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) at X-band (9.5 GHz) and Q-band (34 GHz) frequencies. In both... (Read more)
- 958. Phys. Rev. B 70, 121201(R) (2004) , “Identification of Ga-interstitial defects in GaNyP1–y and AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuTwo Ga-interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1y and... (Read more)
- 959. Phys. Rev. B 70, 115210 (2004) , “Possible p-type doping with group-I elements in ZnO”, Eun-Cheol Lee and K. J. ChangBased on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of... (Read more)
- 960. Phys. Rev. B 70, 115206 (2004) , “Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO”, G. N. Aliev, S. J. Bingham, D. Wolverson, J. J. Davies, H. Makino, H. J. Ko, and T. YaoOptically detected magnetic resonance (ODMR) experiments on epitaxial nitrogen-doped ZnO show spectra due to (i) a shallow donor with the full wurtzite symmetry, (ii) a previously unobserved spin-1/2 center of axial symmetry whose principal axis is tilted slightly away from the crystal c... (Read more)
- 961. Phys. Rev. B 70, 115203 (2004) , “Different roles of carbon and silicon interstitials in the interstitial-mediated boron diffusion in SiC”, Michel Bockstedte, Alexander Mattausch, and Oleg PankratovThe interstitial and vacancy mediated boron diffusion in silicon carbide is investigated with an ab initio method. The boron interstitials in p-type and n-type materials are found to be far more mobile than the boron-vacancy complexes. A kick-out mechanism and an interstitialcy... (Read more)
- 962. Phys. Rev. B 70, 085202 (2004) , “Reassignment of phosphorus-related donors in SiC”, E. Rauls, M. V. B. Pinheiro, S. Greulich-Weber, and U. GerstmannCombining efficient density-functional based tight-binding molecular dynamics with ab initio calculations, we show that despite higher formation energies the incorporation of phosphorus at the carbon sublattice is favored by kinetic effects during the annealing processes. Based on the... (Read more)
- 963. Phys. Rev. B 70, 035203 (2004) , “High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium”, P. Vanmeerbeek, P. Clauws, H. Vrielinck, B. Pajot, L. Van Hoorebeke, and A. Nylandsted LarsenIt was recently discovered that in electron-irradiated germanium doped with oxygen a local vibrational mode occurs at 669 cm1 that could be ascribed to the negatively charged oxygen-vacancy complex (VO). In the 669 cm1 band and in another... (Read more)
- 964. Phys. Rev. B 70, 033204 (2004) , “Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon”, Eisuke Abe, Kohei M. Itoh, Junichi Isoya, and Satoshi YamasakiWe report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K. The two-pulse echo decay curves for both samples show... (Read more)
- 965. Phys. Rev. B 70, 024105 (2004) , “X- and Q-band ENDOR study of the Fe+(II) center in chlorinated SrCl2:Fe crystals”, D. Ghica, S. V. Nistor, H. Vrielinck, F. Callens, and D. SchoemakerThe 001 axially symmetric Fe+(II) center observed in SrCl2:Fe2+ crystals has been studied by the electron nuclear double resonance (ENDOR) technique in the microwave X and Q bands. This center is produced only in crystals grown in chlorine atmosphere... (Read more)
- 966. Phys. Rev. B 69, 45208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 967. Phys. Rev. B 69, 45207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 968. Phys. Rev. B 69, 245207 (2004) , “Donor level of bond-center hydrogen in germanium”, L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. P. MarkevichWe apply Laplace deep-level transient spectroscopy (LDLTS) in situ after low-temperature proton implantation into crystalline n-type germanium and identify a deep metastable donor center. The activation energy of the donor emission is ~110 meV when extrapolated to zero electric field.... (Read more)
- 969. Phys. Rev. B 69, 245205 (2004) , “Atomistic study of intrinsic defect migration in 3C-SiC”, Fei Gao, William J. Weber, M. Posselt, and V. BelkoAtomic-scale computer simulations, both molecular dynamics (MD) and the nudged-elastic band methods, have been applied to investigate long-range migration of point defects in cubic SiC (3C-SiC) over the temperature range from 0.36Tm to 0.95Tm (melting... (Read more)
- 970. Phys. Rev. B 69, 235202 (2004) , “Ab initio study of the annealing of vacancies and interstitials in cubic SiC: Vacancy-interstitial recombination and aggregation of carbon interstitials”, Michel Bockstedte, Alexander Mattausch, and Oleg PankratovThe annealing kinetics of mobile intrinsic defects in cubic SiC is investigated by an ab initio method based on density-functional theory. The interstitial-vacancy recombination, the diffusion of vacancies, and interstitials to defect sinks (e.g., surfaces or dislocations) as well as the... (Read more)
- 971. Phys. Rev. B 69, 233202 (2004) , “Diffusion of hydrogen in perfect, p-type doped, and radiation-damaged 4H-SiC”, B. Aradi, P. Deák, A. Gali, N. T. Son, E. JanzénThe diffusion of interstitial atomic hydrogen in 4H-SiC was investigated theoretically, using the local density approximation of density functional theory. We have found that the diffusion barrier in the perfect crystal is 0.6 eV. Comparing this value with the calculated zero point vibration... (Read more)
- 972. Phys. Rev. B 69, 224108 (2004) , “Mechanical properties and elastic constants due to damage accumulation and amorphization in SiC”, F. Gao and W. J. WeberDamage accumulation due to cascade overlap, which was simulated previously, has been used to study the changes in elastic constants and the bulk and elastic moduli as a function of dose in SiC. These mechanical properties generally decrease with increasing dose, and the rapid decrease at low-dose... (Read more)
- 973. Phys. Rev. B 69, 193202 (2004) , “Optical and electrical properties of vanadium and erbium in 4H-SiC”, D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. ÖbergLocal-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While... (Read more)
- 974. Phys. Rev. B 69, 165215 (2004) , “Boron-hydrogen complexes in diamond”, J. P. Goss, P. R. Briddon, S. J. Sque, and R. JonesBoron in diamond traps hydrogen forming passive Bs-H pairs. Boron trapping two deuterium atoms has been speculated as forming a shallow donor (0.230.34 eV below the conduction band). We present the results of first-principles calculations of boron complexes with 24... (Read more)
- 975. Phys. Rev. B 69, 165206 (2004) , “Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si”, J. L. McAfee, He Ren, and S. K. EstreicherFirst-principles molecular-dynamics simulations are used to predict the structures and binding energies of interstitial nitrogen Ni, substitutional nitrogen Ns, the Ni-self-interstitial complex, the {Ni,Ni}, {Ni,Ns} =... (Read more)
- 976. Phys. Rev. B 69, 155206 (2004) , “Structure, energetics, and extrinsic levels of small self-interstitial clusters in silicon”, Giorgia M. Lopez and Vincenzo FiorentiniNative defects in Si are of obvious importance in microelectronic device processing. Self-interstitials in particular are known to mediate, in many cases, anomalous impurity diffusion. Here we study the energetics and electronic structure of single, double, and triple self-interstitial clusters in... (Read more)
- 977. Phys. Rev. B 69, 153202 (2004) , “Divacancy annealing in Si: Influence of hydrogen”, E. V. Monakhov, A. Ulyashin, G. Alfieri, A. Yu. Kuznetsov, B. S. Avset, and B. G. SvenssonWe have performed comparative studies of divacancy (V2) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V2O) complex during annealing of... (Read more)
- 978. Phys. Rev. B 69, 125218 (2004) , “Structure and properties of vacancy-oxygen complexes in Si1–xGex alloys”, V. P. Markevich, A. R. Peaker, J. Coutinho, R. Jones, V. J. B. Torres, S. Öberg, P. R. Briddon, L. I. Murin, L. Dobaczewski, and N. V. AbrosimovThe electronic properties and structure of vacancy-oxygen (VO) complexes in Czochralski-grown Si1xGex crystals (0<x<0.06) have been studied by means of capacitance transient techniques and ab initio modeling. At least three configurations... (Read more)
- 979. Phys. Rev. B 69, 125217 (2004) , “Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency”, Y. Tokuyama, M. Suezawa, N. Fukata, T. Taishi, and K. HoshikawaWe studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of... (Read more)
- 980. Phys. Rev. B 69, 125214 (2004) , “Spectroscopic evidence for a N-Ga vacancy defect in GaAs”, H. Ch. Alt, Y. V. Gomeniuk, and B. WiedemannA local vibrational mode occurring at 638 cm1 in nitrogen-rich GaAs bulk crystals and 14N-implanted GaAs layers has been investigated by high-resolution Fourier transform infrared absorption spectroscopy. Measurements on samples coimplanted with 14N and... (Read more)
- 981. Phys. Rev. B 69, 125210 (2004) , “Dissociation of H-related defect complexes in Mg-doped GaN”, O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. HoffmannPost-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately... (Read more)
- 982. Phys. Rev. B 69, 125203 (2004) , “First-principles studies of the diffusion of B impurities and vacancies in SiC”, R. Rurali, E. Hernández, P. Godignon, J. Rebollo, and P. OrdejónIn this paper we analyze, by means of first-principles electronic structure calculations, the structural, energetic, and diffusive properties of B impurities in SiC as well as of vacancies. We focus our study on (i) determining the equilibrium structures of the impurity in the lattice by means of... (Read more)
- 983. Phys. Rev. B 69, 121201(R) (2004) , “EPR identification of two types of carbon vacancies in 4H-SiC”, T. Umeda, J. Isoya, N. Morishita, T. Ohshima, and T. KamiyaThe EI5 and EI6 centers are typical intrinsic defects in radiation-damaged and semi-insulating 4H-SiC. So far, their origins have been assigned to positively charged carbon vacancies (VC+) and silicon antisites (SiC+), respectively. However,... (Read more)
- 984. Phys. Rev. B 69, 115212 (2004) , “Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance”, Yu. V. Gorelkinskii and G. D. WatkinsThe effect of 2.5 MeV electron irradiation in situ at 4.2 K on the properties of single crystalline ZnO is studied by photoluminescence (PL) and optically detected electron paramagnetic resonance (ODEPR). A new PL band is produced by the irradiation, and several annealing stages are observed... (Read more)
- 985. Phys. Rev. B 69, 115210 (2004) , “Optical and magnetic properties of Mn in bulk GaN”, A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. PorowskiWe report results of electron paramagnetic resonance, magnetization, and optical absorption studies of bulk GaN crystals doped with Mn and, for some samples, codoped with Mg acceptor. The experiments performed show that the charge state of the Mn ion in GaN depends on the Fermi level position in the... (Read more)
- 986. Phys. Rev. B 69, 115205 (2004) , “Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si”, V. Ranki, A. Pelli, and K. SaarinenPositron annihilation experiments have been performed to identify defects created by annealing of electron irradiated of heavily As-, P-, and Sb-doped Si samples. We show that the vacancy-donor pairs (V-D1) migrate around 450 K, transforming into... (Read more)
- 987. Phys. Rev. B 69, 075210 (2004) , “Isoelectronic oxygen-related defect in CdTe crystals investigated using thermoelectric effect spectroscopy”, Salah A. Awadalla, Alan W. Hunt, Kelvin G. Lynn, Howard Glass, Csaba Szeles, and Su-Huai WeiAn oxygen-related defect was studied in nominally undoped CdTe crystals grown by the high pressure Bridgman technique using thermo-electrical effect spectroscopy and first-principles band structure calculations. Based on the linear relationship between the oxygen concentration and the emitted charge... (Read more)
- 988. Phys. Rev. B 69, 045322 (2004) , “Carbon antisite clusters in SiC: A possible pathway to the DII center”, Alexander Mattausch, Michel Bockstedte, and Oleg PankratovThe photoluminescence center DII is a persistent intrinsic defect which is common in all SiC polytypes. Its fingerprints are the characteristic phonon replicas in luminescence spectra. We perform ab initio calculations of vibrational spectra for various defect complexes and... (Read more)
- 989. Phys. Rev. B 69, 045208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, and Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 990. Phys. Rev. B 69, 045207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, and Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 991. Phys. Rev. B 69, 045201 (2004) , “Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon”, N. Yarykin, O. V. Feklisova, and J. WeberThe H3-center with a level at Ev + 0.535 eV is observed in hydrogenated electron-irradiated boron-doped silicon. In samples with boron concentrations of (220)×1015 cm3 the center is the most abundant among all defects detected by... (Read more)
- 992. Phys. Rev. B 69, 035210 (2004) , “Evolution of voids in Al+-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaUndoped ZnO single crystals were implanted with aluminum ions up to a dose of 1015Al+/cm2. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters,... (Read more)
- 993. Phys. Rev. B 69, 035205 (2004) , “Metastable and nonmetastable recombination-induced defect reactions involving a hydrogen complex with a silicon vacancy in SiC”, Yaroslav KoshkaThe nontrivial recombination-induced behavior of the well-known low-temperature photoluminescence of the hydrogen complex with a silicon vacancy (VSi-H) has been previously reported by different authors. It was known to be limited to the metastable quenching and/or growth. In this... (Read more)
- 994. Phys. Rev. Lett. 93, 255502 (2004) , “Formation of Thermal Vacancies in Highly As and P Doped Si”, V. Ranki and K. SaarinenUsing positron annihilation measurements we observed the formation of thermal vacancies in highly As and P doped Si. The vacancies start to form at temperatures as low as 650 K and are mainly undecorated at high temperatures. Upon cooling the vacancies form stable vacancy-impurity complexes such as... (Read more)
- 995. Phys. Rev. Lett. 93, 245901 (2004) , “Ab Initio Calculations to Model Anomalous Fluorine Behavior”, Milan Diebel, Scott T. Dunhammplanted fluorine is observed to behave unusually in silicon, manifesting apparent uphill diffusion and reducing diffusion and enhancing activation of boron. In order to investigate fluorine behavior, we calculate the energy of fluorine defect structures in the framework of density functional theory. In addition to identifying the ground-state configuration and diffusion migration barrier of a single fluorine atom in silicon, a set of energetically favorable fluorine defect structures were found (FnVm). The decoration of vacancies and dangling silicon bonds by fluorine suggests that fluorine accumulates in vacancy-rich regions, which explains the fluorine redistribution behavior reported experimentally. (Read more)
- 996. Phys. Rev. Lett. 93, 086102 (2004) , “Reaction of the Oxygen Molecule at the Si(100)–SiO2 Interface During Silicon Oxidation”, Angelo Bongiorno and Alfredo PasquarelloUsing constrained ab initio molecular dynamics, we investigate the reaction of the O2 molecule at the Si(100)SiO2 interface during Si oxidation. The reaction proceeds sequentially through the incorporation of the O2 molecule in a Si-Si bond and the... (Read more)
- 997. Phys. Rev. Lett. 93, 055505 (2004) , “Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends”, F. Tuomisto, K. Pennanen, K. Saarinen, and J. SadowskiWe have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite... (Read more)
- 998. Phys. Rev. Lett. 93, 055504 (2004) , “Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in... (Read more)
- 999. Phys. Rev. Lett. 92, 47602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 1000. Phys. Rev. Lett. 92, 255504 (2004) , “Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from ab initio Calculations”, D. V. Makhov and Laurent J. LewisUsing density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain... (Read more)
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