Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 801. Nucl. Instrum. Methods Phys. Res. B 230, 220 (2005) , “Interaction between implanted fluorine atoms and point defects in preamorphized silicon”, G.Impellizzeri and J.H.R.dos Santos and S.Mirabella and E.Napolitani and A.Carnera and F.Priolo
- 802. Phys. Rev. B 72, 45204 (2005) , “Electron-positron momentum distributions associated with isolated silicon vacancies in 3C-SiC”, A. Kawasuso, M. Yoshikawa, H. Itoh, T. Chiba, T. Higuchi, K. Betsuyaku, F. Redmann, R. Krause-RehbergTwo-dimensional angular correlation of annihilation radiation (2D-ACAR) and coincidence Doppler broadening (CDB) of annihilation radiation measurements have been performed on electron-irradiated n-type 3C-SiC in which isolated silicon vacancies are responsible for positron trapping.... (Read more)
- 803. Phys. Rev. B 72, 245209 (2005) , “Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms”, N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, T. Hishita, and K. MurakamiThe formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related... (Read more)
- 804. Phys. Rev. B 72, 235208 (2005) , “Spin multiplicity and charge state of a silicon vacancy (TV2a) in 4H-SiC determined by pulsed ENDOR”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, T. Umeda, and J. IsoyaIn this paper, we unambiguously re-determine the spin multiplicity of TV2a by pulsed electron nucleus double resonance technique. The TV2a center is one of the most commonly observed defects in 4H-SiC, and its origin was... (Read more)
- 805. Phys. Rev. B 72, 235205 (2005) , “Passivation of copper in silicon by hydrogen”, C. D. Latham, M. Alatalo, R. M. Nieminen, R. Jones, S. Öberg, and P. R. BriddonThe structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional... (Read more)
- 806. Phys. Rev. B 72, 195211 (2005) , “Hydrogen local modes and shallow donors in ZnO”, G. Alvin Shi, Michael Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. WeberThe annealing behavior of the free-carrier absorption, O-H vibrational absorption, and photoluminescence lines previously associated with H-related donors in ZnO has been studied. One set of H-related defects gives rise to O-H local vibrational mode absorption at either 3326 or 3611 ... (Read more)
- 807. Phys. Rev. B 72, 195207 (2005) , “Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon”, M. Mikelsen, E. V. Monakhov, G. Alfieri, B. S. Avset, and B. G. SvenssonIn this work the thermal kinetics of the transformation from the divacancy (V2) to the divacancy-oxygen (V2O) complex has been studied in detail, and activation energies, (Ea), have been obtained. Diffusion oxygenated float-zone silicon (DOFZ-Si)... (Read more)
- 808. Phys. Rev. B 72, 153201 (2005) , “Interstitial H2 in germanium by Raman scattering and ab initio calculations”, M. Hiller, E. V. Lavrov, J. Weber, B. Hourahine, R. Jones, and P. R. BriddonSingle-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K... (Read more)
- 809. Phys. Rev. B 72, 121201(R) (2005) , “*Cu0: A metastable configuration of the {Cus,Cui} pair in Si”, S. K. Estreicher, D. West, and M. SanatiFirst-principles theory shows that the substitutional-interstitial copper pair in Si (Si-CusCui) has a metastable state with Cui very near a tetrahedral interstitial site in a trigonal Cus-SiCui configuration... (Read more)
- 810. Phys. Rev. B 72, 115323 (2005) , “Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system: A systematic theoretical study”, J. M. Knaup, P. Deák, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. ChoykeA systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an α-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in... (Read more)
- 811. Phys. Rev. B 72, 115205 (2005) , “Defect identification in the AsGa family in GaAs”, H. Overhof and J.-M. SpaethAb initio total-energy calculations are presented for intrinsic defects in GaAs with a particular emphasis on hyperfine interactions in order to clarify the atomic structure of the various AsGa-related defects. For the AsGa-X2 defect complex the... (Read more)
- 812. Phys. Rev. B 72, 085213 (2005) , “First-principles study of the structure and stability of oxygen defects in zinc oxide”, Paul Erhart, Andreas Klein, and Karsten AlbeA comparative study on the structure and stability of oxygen defects in ZnO is presented. By means of first-principles calculations based on local density functional theory we investigate the oxygen vacancy and different interstitial configurations of oxygen in various charge states. Our results... (Read more)
- 813. Phys. Rev. B 72, 085212 (2005) , “Photoconductivity and infrared absorption study of hydrogen-related shallow donors in ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberVapor phase grown ZnO samples treated with hydrogen and/or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and 310 cm1 were observed in the photoconductivity spectra of hydrogenated ZnO. These are... (Read more)
- 814. Phys. Rev. B 72, 085208 (2005) , “Capacitance transient study of the metastable M center in n-type 4H-SiC”, H. Kortegaard Nielsen, A. Hallén, and B. G. SvenssonThe metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1×1012 cm2. The experimental procedures included deep-level transient spectroscopy, carrier... (Read more)
- 815. Phys. Rev. B 72, 085206 (2005) , “Introduction and recovery of point defects in electron-irradiated ZnO”, F. Tuomisto, K. Saarinen, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (Eel=2 MeV, fluence 6×1017cm2) was performed at room temperature, and isochronal... (Read more)
- 816. Phys. Rev. B 72, 073205 (2005) , “Electronic behavior of rare-earth dopants in AlN: A density-functional study”, S. Petit, R. Jones, M. J. Shaw, P. R. Briddon, B. Hourahine, and T. FrauenheimLocal density functional calculations are carried out on Er, Eu, and Tm rare-earth (RE) dopants in hexagonal AlN. We find that the isolated impurities prefer to substitute for Al and, in contrast with isolated RE dopants in GaAs and GaN, REAl defects are electrically active and introduce... (Read more)
- 817. Phys. Rev. B 72, 045219 (2005) , “Fluorine in Si: Native-defect complexes and the supression of impurity diffusion”, Giorgia M. Lopez, Vincenzo Fiorentini, Giuliana Impellizzeri, Salvatore Mirabella, Enrico NapolitaniThe transient enhanced diffusion of acceptor impurities severely affects the realization of ultrahigh doping regions in miniaturized Si-based devices. Fluorine codoping has been found to suppress this transient diffusion, but the mechanism underlying this effect is not understood. It has been proposed that fluorine-impurity or fluorine–native-defect interactions may be responsible. Here we clarify this mechanism combining first-principles theoretical studies of fluorine in Si and purposely designed experiments on Si structures containing boron and fluorine. The central interaction mechanism is the preferential binding of fluorine to Si-vacancy dangling bonds and the consequent formation of vacancy-fluorine complexes. The latter effectively act as traps for the excess self-interstitials that would normally cause boron transient enhanced diffusion. Instead, fluorine-boron interactions are marginal and do not play any significant role. Our results are also consistent with other observations such as native-defect trapping and bubble formation. (Read more)
- 818. Phys. Rev. B 72, 035214 (2005) , “Vacancy-impurity complexes and limitations for implantation doping of diamond”, J. P. Goss, P. R. Briddon, M. J. Rayson, S. J. Sque, and R. JonesMany candidates have been proposed as shallow donors in diamond, but the small lattice constant means that many substitutional impurities generate large strains and thus yield low solubilities. Strained impurities favor complex formation with other defects and, in particular, the lattice vacancy. We... (Read more)
- 819. Phys. Rev. B 72, 035203 (2005) , “Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K”, L. S. Vlasenko and G. D. WatkinsIntrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL) are ODEPR signals, which are identified with the oxygen vacancy, VO+"... (Read more)
- 820. Phys. Rev. B 72, 033202 (2005) , “Electron-nuclear double-resonance study of Mn2+ ions in ZnGeP2 crystals”, N. Y. Garces, L. E. Halliburton, P. G. Schunemann, and S. D. SetzlerElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) have been used to characterize isolated Mn2+ (3d5) ions in a bulk ZnGeP2 crystal grown by the horizontal Bridgman technique. From the EPR data, we obtain... (Read more)
- 821. Phys. Rev. B 72, 014115 (2005) , “Lattice sites of implanted Fe in Si”, U. Wahl, J. G. Correia, E. Rita, J. P. Araújo, J. C. Soares, and The ISOLDE CollaborationThe angular distribution of β particles emitted by the radioactive isotope 59Fe was monitored following implantation into Si single crystals at fluences from 1.4×1012 cm2 to 1×1014 cm2. We... (Read more)
- 822. Phys. Rev. B 71, 245203 (2005) , “Electrical Activity of Er and Er-O Centers in Silicon”, D. Prezzi, T. A. G. Eberlein, R. Jones, J. S. Filhol, J. Coutindo, M. J. Shaw, P. R. Briddon.Spin-polarized density functional calculations are carried out on Er and Er-oxygen defects in crystalline Si. We find that the interstitial site is favored but the diffusion barrier of Eri is only 1.9 eV, and inevitably Eri forms complexes with impurities and... (Read more)
- 823. Phys. Rev. B 71, 241201(R) (2005) , “Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission”, I. G. Ivanov, A. Henry, and E. JanzénThis paper deals with fitting the donor-acceptor pair luminescence due to P-Al pairs in 4H-SiC. It was possible to identify P at the Si cubic site as the shallower donor with ionization energy of 60.7 meV, as well as to distinguish the contribution in the spectrum from pairs involving this... (Read more)
- 824. Phys. Rev. B 71, 233201 (2005) , “Evidence for vacancy-interstitial pairs in Ib-type diamond”, Konstantin Iakoubovskii, Steen Dannefaer, and Andre StesmansDiamonds containing nitrogen in different forms have been irradiated by 3MeV electrons or 60Co gamma photons and characterized by optical absorption (OA) and electron spin resonance (ESR). An unusually low production rate of vacancies (V) and interstitials (I) was... (Read more)
- 825. Phys. Rev. B 71, 205212 (2005) , “Theoretical study of cation-related point defects in ZnGeP2”, Xiaoshu Jiang, M. S. Miao, and Walter R. L. LambrechtFirst-principles calculations are presented for the VZn and VGe cation vacancies and the ZnGe and GeZn antisites in ZnGeP2, using full-potential linearized muffin-tin orbital method supercell calculations in the local-density... (Read more)
- 826. Phys. Rev. B 71, 195201 (2005) , “Local modes of bond-centered hydrogen in Si:Ge and Ge:Si”, R. N. Pereira, B. Bech Nielsen, L. Dobaczewski, A. R. Peaker, and N. V. AbrosimovLocal vibrational modes of bond-centered hydrogen have been identified in Ge-doped Si (Si:Ge) and Si-doped Ge (Ge:Si) with in-situ-type infrared absorption spectroscopy. The infrared absorbance spectra recorded at 8 K immediately after implantation of the very dilute Si:Ge and Ge:Si alloys... (Read more)
- 827. Phys. Rev. B 71, 193204 (2005) , “Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6H-SiC”, A. Kawasuso, T. Chiba, T. HiguchiElectron-positron momentum distributions associated with vacancy defects in 6H-SiC after irradiation with 2-MeV electrons and annealing at 1000 °C have been studied using angular correlation of annihilation radiation measurements. It was confirmed that the above vacancy defects have... (Read more)
- 828. Phys. Rev. B 71, 193202 (2005) , “EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC”, T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzén, N. Morishita, T. Ohshima, H. Itoh, A. GaliCarbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been observed only in the form of positively charged states in p-type or semi-insulating SiC. Here, we present electron-paramagnetic-resonance (EPR) and photoinduced EPR (photo-EPR)... (Read more)
- 829. Phys. Rev. B 71, 174113 (2005) , “Atomistic mechanisms of amorphization during nanoindentation of SiC: A molecular dynamics study”, Izabela Szlufarska, Rajiv K. Kalia, Aiichiro Nakano, and Priya VashishtaAtomistic mechanisms underlying the nanoindentation-induced amorphization in SiC crystal has been studied by molecular dynamics simulations on parallel computers. The calculated load-displacement curve consists of a series of load drops, corresponding to plastic deformation, in addition to a... (Read more)
- 830. Phys. Rev. B 71, 165211 (2005) , “Theory of boron-vacancy complexes in silicon”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe substitutional boron-vacancy BsV complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type... (Read more)
- 831. Phys. Rev. B 71, 165210 (2005) , “Ion-implantation-induced extended defect formation in (0001) and (11-20) 4H-SiC”, J. Wong-leung, M. K. Linnarsson, B. G. Svensson, D. J. H. CockayneWe study the effect of substrate orientation namely (110) and (0001) oriented crystals on defect formation in 4H-SiC. The microstructure of the various samples, as-implanted with P and annealed, were studied by Rutherford backscattering spectrometry and channeling and transmission electron... (Read more)
- 832. Phys. Rev. B 71, 125210 (2005) , “Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO”, L. S. Vlasenko and G. D. WatkinsThe dominant defect observed in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be the positively charged oxygen vacancy (VO+" align="middle">). Its spectrum, labeled L3,... (Read more)
- 833. Phys. Rev. B 71, 125209 (2005) , “Properties of Ga-interstitial defects in AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuA detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of... (Read more)
- 834. Phys. Rev. B 71, 125202 (2005) , “Positively charged carbon vacancy in three inequivalent lattice sites of 6H-SiC: Combined EPR and density functional theory study”, V. Ya. Bratus', T. T. Petrenko, S. M. Okulov, and T. L. PetrenkoThe Ky1, Ky2, and Ky3 centers are the dominant defects produced in the electron-irradiated p-type 6H-SiC crystals. The electron paramagnetic resonance study of these defects has been performed in the temperature range of 4.2300 K at... (Read more)
- 835. Phys. Rev. B 71, 115213 (2005) , “Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaZnO crystals were implanted with 2080 keV hydrogen ions up to a total dose of 4.4×1015 cm2. Positron lifetime and Doppler broadening of annihilation radiation measurements show introduction of zinc vacancy-related defects after implantation. These vacancies... (Read more)
- 836. Phys. Rev. B 71, 115205 (2005) , “Origin of the 6885-cm–1 luminescence lines in ZnO: Vanadium versus copper”, L. S. Vlasenko, G. D. Watkins, R. HelbigOptical detection of electron paramagnetic resonance reveals the I=7/2 EPR spectrum of V2+ in the sharp photoluminescence (PL) lines often observed at ~6885 cm1 in ZnO, which have universally been assumed previously to arise from copper. An alternative model for... (Read more)
- 837. Phys. Rev. B 71, 115204 (2005) , “Electron Spin Resonance Study of Paramagnetic Centers in Neutron-Irradiated Heat-Treated Silicon”, D. Pierreux and A. StesmansElectron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 °C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 ... (Read more)
- 838. Phys. Rev. B 71, 075421 (2005) , “N-type electric conductivity of nitrogen-doped ultrananocrystalline diamond films”, Ying Dai, Dadi Dai, Cuixia Yan, Baibiao Huang, and Shenghao HanThe electronic structures of several possible nitrogen-related centers on the diamond surface and in the diamond grain-boundary have been studied using density functional theory approaches with cluster models. The results indicate that the nitrogen-vacancy related complex may be the shallow donor... (Read more)
- 839. Phys. Rev. B 71, 035213 (2005) , “Possibility for the electrical activation of the carbon antisite by hydrogen in SiC”, A. Gali, P. Deák, N. T. Son, and E. JanzénCalculations predict the carbon antisite to be the most abundant intrinsic defect in silicon carbide in a wide range of doping. The isolated carbon antisite is, however, optically and electronically inactive, therefore, difficult to observe by usual experimental techniques. However, CSi... (Read more)
- 840. Phys. Rev. B 71, 035205 (2005) , “Dominant hydrogen-oxygen complex in hydrothermally grown ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberA hydrogen-related defect labeled as H-I*, observed in as-grown hydrothermal ZnO, is studied by means of infrared absorption spectroscopy. The defect possesses a stretch local vibrational mode at 3577.3 cm1 that is associated with a single hydrogen atom bound to oxygen with the O-H... (Read more)
- 841. Phys. Rev. Lett. 95, 225502 (2005) , “Evidence for Native-Defect Donors in n-Type ZnO”, D. C. Look, G. C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, and K. NordlundRecent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory... (Read more)
- 842. Phys. Rev. Lett. 95, 105502 (2005) , “Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond”, M. J. Shaw, P. R. Briddon, J. P. Goss, M. J. Rayson, A. Kerridge, A. H. Harker, and A. M. StonehamOur ab initio calculations of the hyperfine parameters for negatively charged vacancy-hydrogen and nitrogen-vacancy-hydrogen complexes in diamond compare static defect models and models which account for the quantum tunneling behavior of hydrogen. The static models give rise to hyperfine... (Read more)
- 843. Phys. Rev. Lett. 94, 186101 (2005) , “Geometric Characterization of a Singly Charged Oxygen Vacancy on a Single-Crystalline MgO(001) Film by Electron Paramagnetic Resonance Spectroscopy”, Martin Sterrer, Esther Fischbach, Thomas Risse, and Hans-Joachim FreundElectron paramagnetic resonance spectra of singly charged surface oxygen vacancies (F or color centers) formed by electron bombardment on a single-crystalline MgO film under UHV conditions are reported. The embedding of the defect in a well-defined geometrical environment allows not only for... (Read more)
- 844. Phys. Rev. Lett. 94, 165501 (2005) , “Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy”, M. Rummukainen, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, and H.-J. L. GossmannPositron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 12 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the... (Read more)
- 845. Phys. Rev. Lett. 94, 125501 (2005) , “Delocalized Nature of the Edelta[prime]" align="middle"> Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of Edelta[prime]" align="middle"> point defect induced by γ-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR... (Read more)
- 846. Phys. Rev. Lett. 94, 097602 (2005) , “Shallow Donors in Semiconductor Nanoparticles: Limit of the Effective Mass Approximation”, Serguei B. Orlinskii, Jan Schmidt, Edgar J. J. Groenen, Pavel G. Baranov, Celso de Mello Donegá, and Andries MeijerinkThe spatial distribution of the electronic wave function of a shallow, interstitial Li donor in a ZnO semiconductor nanocrystal has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by electron nuclear double resonance... (Read more)
- 847. Proc. SPIE 6020, 60203D (2005) , “Effect of radio frequency bias on the optical and structural properties of nanocrystalline SiC films deposited by helicon wave plasma enhanced chemical vapor deposition”, Wei Yu, Chunsheng Wang, Wanbing Lu, Shuangkui Cui, Guangsheng FuNanocrystalline cubic silicon carbide thin films have been fabricated by helicon wave plasma enhanced chemical vapor deposition (HWP-CVD) on Si and Corning 7059 glass substrates using the mix plasma of SiH4, CH4, and H2. The effect of negative radio-frequency (rf) bias voltage on the optical and... (Read more)
- 848. Proc. SPIE 5732, 77 (2005) , “Growth of carbon nanotubes by sublimation of silicon carbide substrates”, William C. Mitchel, John Boeckl, David Tomlin, Weijie Lu, John Riqueur, Jonathan ReynoldsAligned carbon nanotubes (CNT"s) have been found to form on both the Si and C faces of silicon carbide (SiC) wafers at high temperature. The CNT"s form when the SiC wafer is exposed to temperatures in the range 1400-1700°C under moderate vacuum. The CNT"s are aligned roughly... (Read more)
- 849. Semiconductors 39, 709 (2005) , “Structural Defects and Electrical Conductivity in Nanocrystalline SiC:H Films Doped with Boron and Grown by Photostimulated Chemical-Vapor Deposition”, O. I. Shevaleevskiy, S. Y. Myong, K. S. Lim, S. Miyajima, M. KonagaiThe paramagnetic DB defects and dark conductivity σd in films of nanocrystalline hydrogenated silicon doped with boron and carbon (nc-SiC:H) and grown by photostimulated chemical vapor deposition are studied. It is shown that an increase in the doping level leads to a phase transition from the crystalline structure to an amorphous structure. The electrical conductivity increases as the doping level increases and attains the value of σd = 5.5 × 10-2 Ω-1 cm-1; however, the conductivity decreases once the phase transition has occurred. The concentration of DB defects decreases steadily as the doping level increases and varies from 1019 cm-3 (in the crystalline structure) to 9×1017 cm-3 (in the amorphous structure). (Read more)
- 850. Semiconductors 39, 493 (2005) , “Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals”, B. P. Popov, V. K. Sobolevski?, E. G. Apushkinski?, V. P. Savel'evThe exchange coupling of Fe centers in GaAs crystals is studied by electron spin resonance (ESR). Transitions to a superparamagnetic state and to an impurity ferromagnetism domain are analyzed. A study of a system of single-domain magnetically ordered regions in GaAs:Fe with the transition to a ferromagnetic state occurring at the temperature T C1 = 460 K is described. It is shown that impurity ferromagnetism with a transition temperature T C2 of 60 K in a disordered system of Fe centers randomly distributed among superparamagnetic regions exists in GaAs:Fe. (Read more)
- 851. Spectrochim. Acta A. 61, 2595-2602 (2005) , “VO2+ ions in zinc lead borate glasses studied by EPR and optical absorption techniques”, P. Giri Prakash , J. Lakshmana RaoElectron paramagnetic resonance (EPR) and optical absorption spectra of vanadyl ions in zinc lead borate (ZnO–PbO–B2O3) glass system have been studied. EPR spectra of all the glass samples exhibit resonance signals characteristic of VO2+ ions. The values of spin-Hamiltonian parameters... (Read more)
- 852. Superlatt. Microstruct. 38, 413-420 (2005) , “EPR study on magnetic Zn1−xMnxO”, Mariana Diaconu, Heidemarie Schmidt, Andreas Pöppl, Rolf Böttcher, Joachim Hoentsch, Andreas Rahm, Holger Hochmuth, Michael Lorenz ,Marius GrundmannDiluted magnetic semiconductors (DMS), systems formed by replacing cations of the host semiconductor material with transition-metal ions, are developed for further use in spintronics. A good combination as a DMS is Zn1−xMnxO due to the ZnO wide band gap (3.37 eV) and the matching ionic... (Read more)
- 853. Appl. Phys. Lett. 85, 943-945 (2004) , “Paramagnetic defects of silicon nanowires”, A. Baumer, M. Stutzmann, and M. S. BrandtThe paramagnetic defects in and on Si nanowires (SiNWs) obtained by oxide-assisted growth were studied by conventional electron spin resonance spectroscopy. For the as-grown nanowires, three different defects were found: Dangling bonds or Pb-centers with g = 2.0065, located... (Read more)
- 854. Appl. Phys. Lett. 85, 926 (2004) , “Atomic cracks and (2×2×)-R30° reconstruction at 6H-SiC(0001) surface”, E. Amy, P. Soukiassian, C. BrylinskiWe investigate the Si-rich 3×3 to Si-terminated × phase transition of the 6H-SiC(0001) surface by atom-resolved scanning tunneling microscopy. We find a 2×2-R30° reconstruction, coexisting with few 3×3 domains. While a high-quality 3×3 surface preparation is... (Read more)
- 855. Appl. Phys. Lett. 85, 5209 (2004) , “Cross-sectional structure of carrot defects in 4H–SiC epilayers”, X. Zhang, S. Ha, M. Benamara, M. Skowronski, M. J. O’Loughlin, J. J. SumakerisSurface morphology of carrot defects in 4HSiC epilayers is described based on optical microscopy and molten potassium hydroxide etching. Its crystallographic structure is investigated using cross-sectional transmission x-ray topography. A threading screw dislocation in substrate serves as the... (Read more)
- 856. Appl. Phys. Lett. 85, 4902-4904 (2004) , “Anomalous energetics and defect-assisted diffusion of Ga in silicon”, Claudio Melis, Giorgia M. Lopez, and Vincenzo FiorentiniWe study via first-principles calculations the energetics and diffusion of Ga in c-Si. In contrast to B and In, the favored Ga/self-interstitial complex is the tetrahedral interstitial GaT. Thus in the presence of self-interstitials Ga becomes interstitial, and is... (Read more)
- 857. Appl. Phys. Lett. 85, 4633-4635 (2004) , “Electrical and optical properties of rod-like defects in silicon”, J. P. Goss and P. R. BriddonSelf-interstitials in silicon can aggregate to form rod-like defects (RLDs) having both electrical and optical activity. We carry out local density functional calculations for both {113} and {111} RLDs to determine their structures and electrical activity. We find that small {113} RLDs are more... (Read more)
- 858. Appl. Phys. Lett. 85, 384-386 (2004) , “Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide”, C. C. Ling, M. K. Lui, S. K. Ma, X. D. Chen, S. Fung, and C. D. BelingAcceptors in liquid encapsulated Czochralski-grown undoped gallium antimonide (GaSb) were studied by temperature dependent Hall measurement and positron lifetime spectroscopy (PLS). Because of its high concentration and low ionization energy, a level at EV + 34 meV is found... (Read more)
- 859. Appl. Phys. Lett. 85, 3780 (2004) , “Low temperature annealing of electron irradiation induced defects in 4H-SiC”, Antonio Castaldini, Anna Cavallini, Lorenzo Rigutti, Filippo NavaLow temperature annealing of electron irradiation-induced deep levels in 4H-SiC is reported. The major deep level transient spectroscopy peak S2 associated with the energy level at Ec0.39 eV disappears in the temperature range 360400 K, and some rearrangement... (Read more)
- 860. Appl. Phys. Lett. 85, 2827-2829 (2004) , “Formation of Ga interstitials in (Al,In)yGa1–yNxP1–x alloys and their role in carrier recombination”, N. Q. Thinh, I. P. Vorona, M. Izadifard, I. A. Buyanova, and W. M. ChenFormation of complex defects involving a Ga interstitial (Gai) in (Al,In)yGa1yNxP1x alloys and their effects on optical quality are studied by photoluminescence (PL) and optically detected magnetic... (Read more)
- 861. Appl. Phys. Lett. 85, 1716 (2004) , “Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing”, Y. Negoro, T. Kimoto, and H. MatsunamiN-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one... (Read more)
- 862. Appl. Phys. Lett. 85, 1601 (2004) , “Different origins of visible luminescence in ZnO nanostructures fabricated by the chemical and evaporation methods”, D. Li, Y. H. Leung, A. B. Djurisic, Z. T. Liu, M. H. Xie, S. L. Shi, S. J. Xu, W. K. ChanWe prepared ZnO nanostructures using chemical and thermal evaporation methods. The properties of the fabricated nanostructures were studied using scanning electron microscopy, x-ray diffraction, photoluminescence, and electron paramagnetic resonance (EPR) spectroscopy. It was found that the... (Read more)
- 863. Appl. Phys. Lett. 85, 1547 (2004) , “The effect of hydrogen etching on 6H-SiC studied by temperature-dependent current-voltage and atomic force microscopy”, S. Dogan, D. Johnstone, F. Yun, S. Sabuktagin, J. Leach, A. A. Baski, H. Morkoç, G. Li, B. Ganguly6HSiC was etched with hydrogen at temperatures between 1000 and 1450°C. The etched Si-terminated face for the 6H-SiC wafer was investigated by atomic force microscopy and temperature-dependent currentvoltage (IVT) measurements. Mechanical polishing... (Read more)
- 864. Appl. Phys. Lett. 85, 1538 (2004) , “Observation of fluorine-vacancy complexes in silicon”, P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. LawWe show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the... (Read more)
- 865. Appl. Phys. Lett. 84, 720-722 (2004) , “Isolated nickel impurities in diamond: A microscopic model for the electrically active centers”, R. Larico, L. V. C. Assali, and W. V. M. MachadoWe present a theoretical investigation on the structural and electronic properties of isolated nickel impurities in diamond. The atomic structures, symmetries, formation and transition energies, and hyperfine parameters of isolated interstitial and substitutional Ni were computed using ab... (Read more)
- 866. Appl. Phys. Lett. 84, 538 (2004) , “Interpretation of Fermi level pinning on 4H-SiC using synchrotron photoemission spectroscopy”, Sang Youn Han and Jong-Lam LeeThe Fermi level movements on 4H-SiC were observed in in situ deposited Ni contact using synchrotron radiation photoemission spectroscopy. For n-type SiC, the surface band bending increased about 0.75 eV with the Ni deposition, meaning the shift of Fermi level towards valence band edge.... (Read more)
- 867. Appl. Phys. Lett. 84, 4887-4889 (2004) , “Vacancy defects in O-doped GaN grown by molecular-beam epitaxy: The role of growth polarity and stoichiometry”, M. Rummukainen, J. Oila, A. Laakso, and K. SaarinenPositron annihilation spectroscopy is used to study vacancy defects in GaN grown by molecular-beam epitaxy due to different polar directions and varying stoichiometry conditions during oxygen doping. We show that Ga-polar material is free of compensating Ga vacancies up to [O] = 1018 ... (Read more)
- 868. Appl. Phys. Lett. 84, 4574-4576 (2004) , “Paramagnetic NO2 centers in thin γ-irradiated HfO2 layers on (100)Si revealed by electron spin resonance”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) analysis reveals the incorporation of N in (100)Si/HfO2 structures with ultrathin amorphous HfO2 films deposited by chemical vapor deposition (CVD) using Hf(NO3)4 as precursor, through detection, after 60Co... (Read more)
- 869. Appl. Phys. Lett. 84, 4514-4516 (2004) , “Doping-level-dependent optical properties of GaN:Mn”, O. Gelhausen, E. Malguth, and M. R. PhillipsThe optical properties of molecular-beam-epitaxy-grown GaN with different Mn-doping levels (523×1019 cm3) were studied by cathodoluminescence (CL) and optical transmission spectroscopy. Transmission measurements at 2 K revealed an absorption peak at... (Read more)
- 870. Appl. Phys. Lett. 84, 3909 (2004) , “Amorphization of silicon carbide by carbon displacement”, R. Devanathan, F. Gao, and W. J. WeberWe have used molecular dynamics simulations to examine the possibility of amorphizing silicon carbide (SiC) by exclusively displacing C atoms. At a defect generation corresponding to 0.2 displacements per atom, the enthalpy surpasses the level of melt-quenched SiC, the density decreases by about... (Read more)
- 871. Appl. Phys. Lett. 84, 3894-3896 (2004) , “H-related defect complexes in HfO2: A model for positive fixed charge defects”, Joongoo Kang, E.-C. Lee, and K. J. ChangBased on first-principles theoretical calculations, we investigate the hydrogenation effect on the defect properties of oxygen vacancies (VO) in HfO2. A defect complex of VO and H behaves as a shallow donor for a wide range of Fermi levels, with a... (Read more)
- 872. Appl. Phys. Lett. 84, 3876-3878 (2004) , “Observation of a Be-correlated donor state in GaN”, F. Albrecht, U. Reislöhner, G. Pasold, C. Hülsen, and W. WitthuhnA Be-related donor level was identified in the band gap of GaN. Thermal admittance spectroscopy (TAS) was combined with the radiotracer principle by applying the radioactive isotope 7Be which was implanted into n-type and p-type GaN. TAS spectra of n-type GaN... (Read more)
- 873. Appl. Phys. Lett. 84, 374-376 (2004) , “Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition”, A. Armstrong and A. R. ArehartThe effect of excess C incorporation on the deep level spectrum of n-type GaN grown by metalorganic chemical vapor deposition was investigated. Low-pressure (LP) growth conditions were used to intentionally incorporate excess C compared to atmospheric pressure (AP) growth conditions. GaN... (Read more)
- 874. Appl. Phys. Lett. 84, 3486-3488 (2004) , “Blueshift of yellow luminescence band in self-ion-implanted n-GaN nanowire”, S. Dhara, A. Datta, C. T. Wu, Z. H. Lan, K. H. Chen, and Y. L. WangOptical photoluminescence studies are performed in self-ion (Ga+)-implanted nominally doped n-GaN nanowires. A 50 keV Ga+ focused ion beam in the fluence range of 1×10142×1016 ions cm2 is used for the irradiation... (Read more)
- 875. Appl. Phys. Lett. 84, 3406-3408 (2004) , “Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, David J. Meyer, Nathaniel A. Bohna, and Patrick M. LenahanWe utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2... (Read more)
- 876. Appl. Phys. Lett. 84, 3406 (2004) , “Structure of 6H silicon carbide/silicon dioxide interface trapping defects”, David J. Meyer, Nathaniel A. Bohna, Patrick M. Lenahan, Aivars J. LelisWe utilize spin-dependent recombination (SDR) to observe deep level trap defects at or very near the interface of 6H silicon carbide and the SiO2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors. The SDR response is strongly correlated to SiC/SiO2... (Read more)
- 877. Appl. Phys. Lett. 84, 3064-3066 (2004) , “Comparison of the electrical activation of P+ and N+ ions co-implanted along with Si+ or C+ ions into 4H-SiC”, F. Schmid and G. PenslThe annealing behavior of P+ and N+ ions implanted into p-type 4H-SiC epilayers is studied by a temperature-dependent Hall-effect. Detailed investigations reveal that the electrical activation of implanted P+ ions is governed by the site competition effect,... (Read more)
- 878. Appl. Phys. Lett. 84, 3049-3051 (2004) , “Determination of the ionization energy of nitrogen acceptors in zinc oxide using photoluminescence spectroscopy”, Lijun Wang and N. C. GilesPhotoluminescence spectroscopy of nitrogen-related emissions in ZnO is used to establish the ionization energy of the substitutional nitrogen acceptor. The temperature dependence of the nitrogen-related electron-acceptor (e,A0) emission band has been monitored in as-grown... (Read more)
- 879. Appl. Phys. Lett. 84, 2841-2843 (2004) , “Structure and electrical activity of rare-earth dopants in GaN”, J.-S. Filhol and R. JonesDensity functional theory is used to investigate Eu, Er, and Tm rare earth (RE) impurities in GaN, paying particular attention to their structure, energetics, and electronic properties. The most stable site is when the RE is located at a Ga substitutional site but none of the defects possess deep... (Read more)
- 880. Appl. Phys. Lett. 84, 2760-2762 (2004) , “Activation mechanism of annealed Mg-doped GaN in air”, Yow-Jon LinIn this study, the activation mechanism of annealed Mg-doped GaN in air and the influence of ambient on activation of Mg-doped GaN were investigated. According to the experimental results, we found that the dissociation of MgGaH, and the formation of hydrogenated gallium vacancies... (Read more)
- 881. Appl. Phys. Lett. 84, 2635 (2004) , “Visible photoluminescence in ZnO tetrapod and multipod structures”, Aleksandra B. Djurisic, Yu Hang Leung, Wallace C. H. Choy, Kok Wai Cheah, Wai Kin ChanThe properties of ZnO tetrapod and multipod structures were investigated using scanning electron microscopy, x-ray diffraction, photoluminescence (PL), and electron paramagnetic resonance (EPR) spectroscopy. While there is relationship between g = 1.96 EPR and green PL in some of the samples,... (Read more)
- 882. Appl. Phys. Lett. 84, 2349-2351 (2004) , “Electrical characterization of phosphorus-doped n-type homoepitaxial diamond layers by Schottky barrier diodes”, Mariko Suzuki, Hiroaki Yoshida, Naoshi Sakuma, Tomio Ono, and Tadashi SakaiTemperature-dependent currentvoltage (IV), capacitancevoltage (CV) measurements, and frequency-dependent CV measurements have been carried out to investigate electrical properties of phosphorus (P)-doped n-type... (Read more)
- 883. Appl. Phys. Lett. 84, 2277-2279 (2004) , “Passivation of Mn acceptors in GaMnAs”, M. S. Brandt, S. T. B. Goennenwein, T. A. Wassner, F. Kohl, A. Lehner, H. Huebl, T. Graf, and M. StutzmannThe effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (1021 cm3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to... (Read more)
- 884. Appl. Phys. Lett. 84, 2106-2108 (2004) , “Room-temperature silicon light-emitting diodes based on dislocation luminescence”, V. Kveder, M. Badylevich, E. Steinman, and A. IzotovWe demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity... (Read more)
- 885. Appl. Phys. Lett. 84, 2055-2057 (2004) , “Evidence on the mechanism of boron deactivation in Ge-preamorphized ultrashallow junctions”, B. J. Pawlak and R. SurdeanuWe investigate the thermal stability of boron-doped junctions formed by Ge preamorphization and solid phase epitaxial regrowth. Isochronal annealing and characterization by sheet resistance, secondary-ion mass spectrometry, and spreading-resistance measurement are used to extract detailed... (Read more)
- 886. Appl. Phys. Lett. 84, 197-199 (2004) , “Narrow, deep level cathodoluminescence emission from semi-insulating GaAs”, J. K. RadhakrishnanCathodoluminescence investigations on bulk undoped semi-insulating GaAs samples taken from different sources reveal the presence of a deep level emission at 0.9 eV at 77 K, with a narrow full width at half maximum of 8 meV. The temperature-dependent and beam-parameter-dependent studies indicate... (Read more)
- 887. Appl. Phys. Lett. 84, 1895-1897 (2004) , “Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond”, Ying DaiWe report on the role of two boronhydrogen complexes in the conductivity conversion from p-type to n-type in boron-doped diamond samples. The calculated electronic structures of the simulated clusters show that the boronhydrogen complex of hydrogenboron pairs... (Read more)
- 888. Appl. Phys. Lett. 84, 1889-1891 (2004) , “"Umbrella"-like precipitates in nitrogen-doped Czochralski silicon wafers”, A. Kvit, A. Karoui, G. Duscher, and G. A. RozgonyiNitrogen effect on nucleation of oxygen precipitates in Czochralski Si has been investigated by transmission electron microscopy, Z-contrast imaging, and electron energy loss spectrometry (EELS). We have examined unusual "umbrella" shape oxygen precipitates in bulk of ingot in... (Read more)
- 889. Appl. Phys. Lett. 84, 1862-1864 (2004) , “Role of fluorine in suppressing boron transient enhanced diffusion in preamorphized Si”, G. Impellizzeri, J. H. R. dos Santos, S. Mirabella, and F. PrioloWe have explained the role of fluorine in the reduction of the self-interstitial population in a preamorphized Si layer under thermal treatment. For this purpose, we have employed a B spike layer grown by molecular-beam epitaxy as a marker for the self-interstitial local concentration. The... (Read more)
- 890. Appl. Phys. Lett. 84, 1859-1861 (2004) , “Nonradiative recombination centers in Ga(As,N) and their annealing behavior studied by Raman spectroscopy”, M. Ramsteiner, D. S. Jiang, J. S. Harris, and K. H. PloogNitrogen-related defects in diluted Ga(As,N) have been detected by Raman scattering in resonance with the localized E+ transition. These defects are attributed to local vibrational modes of nitrogen dimers on Ga- and As-lattice sites. Rapid thermal annealing under appropriate... (Read more)
- 891. Appl. Phys. Lett. 84, 1774 (2004) , “Reverse characteristics of pn diodes on 4H–SiC(000-1) C and (11-20) face”, Yasunori Tanaka, Kenji Fukuda, Kazuo Arai, Kazutoshi Kojima, Takaya Suzuki, Tsutomu YatsuoWe fabricated pn diodes on the 4HSiC(000-1) C and (11-20) face. The epitaxial growth of the n-type drift layer was carried out in chemical vapor deposition (CVD) reactor under the optimized conditions for each substrate. The pn junction was formed by... (Read more)
- 892. Appl. Phys. Lett. 84, 1713-1715 (2004) , “EL2-related metastable defects in semi-insulating GaAs”, D. KabirajThermally stimulated current spectroscopy, photoquenching, and photorecovery have been used to reveal the EL2-related metastable defect levels in semi-insulating GaAs. It has been found that one set of metastable levels is directly related to EL2 and the other set is indirectly related to EL2 defect... (Read more)
- 893. Appl. Phys. Lett. 84, 1704 (2004) , “Bistable defect in mega-electron-volt proton implanted 4H silicon carbide”, D. M. Martin, H. Kortegaard Nielsen, P. Lévêque, A. Hallén, G. Alfieri, B. G. SvenssonEpitaxial 4H-SiC n-type layers implanted at room temperature with a low fluence of mega-electron-volt protons have been measured by deep level transient spectroscopy (DLTS). The proton fluence of 1×1012 cm2 creates an estimated initial concentration of... (Read more)
- 894. Appl. Phys. Lett. 84, 1698-1700 (2004) , “Sensitivity of Pt/ZnO Schottky diode characteristics to hydrogen”, Suku Kim, B. S. Kang, and F. RenPt/ZnO Schottky diodes show changes in forward current of 0.3 mA at a forward bias of 0.5 V or alternatively a change of 50 mV bias at a fixed forward current of 8 mA when 5 ppm of H2 is introduced into a N2 ambient at 25 °C. The rectifying currentvoltage... (Read more)
- 895. Appl. Phys. Lett. 84, 1683-1685 (2004) , “Optically active erbium–oxygen complexes in GaAs”, J. CoutinhoDensity functional modeling of Er and ErO complexes in GaAs show that Er impurities at the Ga site are not efficient channels for exciton recombination, but decorative O atoms play crucial roles in inhibiting Er precipitation and in creating the necessary conditions for electron-hole capture.... (Read more)
- 896. Appl. Phys. Lett. 84, 1576-1578 (2004) , “Electron-beam-induced current observed for dislocations in diffused 4H-SiC P–N diodes”, S. Maximenko, S. Soloviev, D. Cherednichenko, and T. SudarshanThe electron-beam-induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon carbide Schottky and diffused pn diodes. Dislocations in Schottky diodes appear as dark spots with the EBIC current signal at the dislocations reduced... (Read more)
- 897. Appl. Phys. Lett. 84, 1498 (2004) , “Effect of nitric oxide annealing on the interface trap density near the conduction bandedge of 4H–SiC at the oxide/(110) 4H–SiC interface”, S. Dhar, Y. W. Song, L. C. Feldman, T. Isaacs-Smith, C. C. Tin, J. R. Williams, G. Chung, T. Nishimura, D. Starodub, T. Gustafsson, E. GarfunkelNitric oxide postoxidation anneal results in a significant decrease of defect state density (Dit) near the conduction bandedge of n-4HSiC at the oxide/(110) 4HSiC interface. Comparison with measurements on the conventional (0001) Si-terminated face... (Read more)
- 898. Appl. Phys. Lett. 84, 1492-1494 (2004) , “Comparative study of defect energetics in HfO2 and SiO2”, W. L. Scopel, Antônio J. R. da Silva, W. Orellana, and A. FazzioWe perform ab initio calculations, based on density functional theory, for substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and α-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2... (Read more)
- 899. Eur. Phys. J. Appl. Phys. 27, 13-19 (2004) , “Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM”, T. Umeda, A. Toda, Y. MochizukiProcess-induced defects are a serious issue for modern sub-micron Si LSIs. To characterize such defects, two different techniques are useful: electrically detected magnetic resonance (EDMR) and transmission electron microscope (TEM), which can detect small (point) and extended defects, respectively. We applied EDMR and TEM to the issue of defect-induced leakage currents in dynamic-random-access memory (DRAM) cells. For our DRAM samples (a 0.25- μm-rule series), although TEM showed no extended defects, EDMR successfully detected two types of point defects: V2+O x (Si divacancy-oxygen complexes) and larger Si vacancies (at least larger than V6). We confirmed that these defects are the source of DRAM leakage currents. The observed defects were formed by ion implantation processes, but were more thermally stable than those in bulk Si crystals. The origins of this enhanced stability are attributed to the presence of oxygen atoms and a strong mechanical strain in LSIs. To clarify the origin of the complicated strain in LSI structures, we can directly measure the local-strain distribution in DRAM samples by means of convergent-beam electron diffraction (CBED) using TEM, which provides us with a valuable hint for understanding the formation mechanism of process-induced defects. (Read more)
- 900. IEEE Electron Device Lett. 25, 153 (2004) , “Evaluation of NBTI in HfO2 Gate-Dielectric Stacks With Tungsten Gates”,
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)