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- 801. J. Lumin. 53, 88 (1992) , “Frequency-dependent dephasing of N-V centers in diamond”, Eric van Oort and Max GlasbeekIn this paper, we report on high-resolution magneto-optical double-resonance experiments on the 3A →3E zero-phonon line (ZPL) transition of the N-V center in diamond. It is demonstrated that hole burning of the ZPL absorption (at 637 nm) is achieved by resonant microwave excitation of the... (Read more)
- 802. J. Appl. Phys. 71, 4615 (1992) , “Paramagnetic defects in neutron-irradiated GaP”, T. Benchiguer, A. Goltzené, B. Mari, and C. SchwabAiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum... (Read more)
- 803. J. Appl. Phys. 72, 211 (1992) , “Autler–Townes effect of the photoexcited diamond nitrogen-vacancy center in its triplet ground state”, Xing-Fei He, Peter T. H. Fisk, and Neil B. MansonThe AutlerTownes effect in nuclear magnetic resonance (NMR) and electron paramagnetic resonance has been observed using recently developed Raman heterodyne techniques. The measurements were carried out on the nitrogen-vacancy color center in diamond, where the 3A"... (Read more)
- 804. J. Appl. Phys. 72, 3095 (1992) , “Complexing in Silicon Induced by Surface Reactions: Electron Paramagnetic Resonance Detection of a 6-Platinum Cluster”, M. Höhne and U. JudaComplexing of 5dn impurities from supersaturated solutions in silicon occurs during thermal processing at intermediate temperatures subsequent to fast or retarded quenching. Doping of silicon with 5dn transition-metal ions in a wet... (Read more)
- 805. J. Appl. Phys. 72, 520-524 (1992) , “Deep levels of vanadium and vanadium-hydrogen complex in silicon”, T. Sadoh, H. Nakashima, and T. TsurushimaDeep levels in vanadium-doped n- and p-type silicon have been investigated using deep level transient spectroscopy (DLTS) and concentration profile measurements. The DLTS measurement reveals two electron traps of EC−0.20 eV and... (Read more)
- 806. Appl. Phys. Lett. 60, 1857 (1992) , “Spin Dependent Recombination in Pt-Doped Silicon p-n Junctions”, P. Christmann, C. Wetzel, B. K. Meyer, A. Asenov, A. Endrös.Electrically detected magnetic resonance experiments showing spin dependent recombination in commercial p-n diodes are presented. The observed anisotropy in the g values along with the marked shift from the free electron g-value point to a metal-vacancy complex. Deep... (Read more)
- 807. Appl. Phys. Lett. 60, 610 (1992) , “Electrically detected magnetic resonance of a transition metal related recombination center in Si p–n diodes”, F. C. Rong, G. J. Gerardi, W. R. Buchwald, E. H. Poindexter, M. T. Umlor, D. J. Keeble, W. L. WarrenA hyperfine structure has been observed by electrically detected magnetic resonance from a Si pn diode. From the hyperfine splitting, and the natural abundance of the interacting I=1/2 nuclear species, the recombination center is found to be consistent with a platinum... (Read more)
- 808. Appl. Phys. Lett. 60, 718 (1992) , “Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers”, H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, E. H. PoindexterArsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (~200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band... (Read more)
- 809. Appl. Phys. Lett. 61, 2569 (1992) , “Spin-dependent effects in porous silicon”, M. S. Brandt and M. StutzmannLuminescent anodically etched porous silicon is studied with electron spin resonance, optically detected magnetic resonance, and spin-dependent photoconductivity. The Pb center, the silicon dangling bond at the crystalline Si/SiO2 interface, is found to be the... (Read more)
- 810. Appl. Phys. Lett. 61, 2887-2889 (1992) , “Identification of an interface defect generated by hot electrons in SiO2”, J. H. Stathis and D. J. DiMariaHot electrons in the gate dielectric (SiO2) of field effect transistors create defects at the Si/SiO2 interface. Using electrically detected magnetic resonance, we have identified a major component of these interface defects as the well-known Pb0 center. We... (Read more)
- 811. Solid State Commun. 88, 887-889 (1993) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs and G. H. StaussA. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a sub- millimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g= 2.04 ± 0.01 at v=11.236cm-1. The hyperfine interaction parameter |A| (I=3/2) is 0.090 ± 0.001 cm-1.The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP. (Read more)
- 812. Semicond. Sci. Technol. 8, 1385-1392 (1993) , “Electrically detected electron paramagnetic resonance of a deep recombination centre in a silicon diode”, B. Stich , S. Gruelich-Weber , J.-M. Spaeth , H. Overhof
- 813. Semicond. Sci. Technol. 8, 2037 (1993) , “Generation of thermal donors in silicon: oxygen aggregation controlled by self-interstitials”, V V VoronkovThe analysis of kinetic data on thermal donors (TDS) leads to a general model of oxygen aggregation: the aggregates which arise differ not only in size but also in the number of emitted self-interstitials, m. Each line of aggregates-of a particular m-may contain a TD family. The well known family of... (Read more)
- 814. Physica B 185, 228-233 (1993) , “Study of defects in wide band gap semiconductors by electron paramagnetic resonance”, M. Fanciulli, T. D. MoustakasDefects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3–5 Gauss and spin-lattice relaxation time, at 293 K, of 10-6 s. In... (Read more)
- 815. Phys. Rev. Lett. 70, 1723 (1993) , “Relationship between Stress and Dangling Bond Generation at the (111)Si/SiO2 Interface”, A. Stesmans.Electron spin resonance analysis of the intrinsic density [Pb] of interfacial Pb (?Si?Si3) defects in thermal (111)Si/SiO2 as a function of oxidation temperature Tox in the range 200–1140°C reveals a close linear correlation with the average... (Read more)
- 816. Phys. Rev. Lett. 70, 3816 (1993) , “Structure-Sensitive Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon”, P. M. Williams, G. D. Watkins, S. Uftring, and Michael StavolaSeveral centers that involve Pt and H have been introduced into n-type Si and studied by electron paramagnetic resonance and vibrational spectroscopy to provide unique structure-sensitive data for an H-passivated deep level impurity. Through the observation of Pt-H and -D hyperfine interactions, a... (Read more)
- 817. Phys. Rev. Lett. 71, 117 (1993) , “Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanIn briefly annealed silicon samples implanted with hydrogen and deuterium an electron paramagnetic resonance spectrum is detected. It is identified as arising from a hydrogen molecule oriented in the ?111? crystallographic direction and located most probably at an interstitial site. Such a result is... (Read more)
- 818. Phys. Rev. Lett. 71, 557 (1993) , “Bond-Centered Muonium in Diamond: Resolved Nuclear Hyperfine Structure”, J. W. Schneider, R. F. Kiefl, K. H. Chow, S. Johnston, J. Sonier, T. L. Estle, B. Hitti, R. L. Lichti, S. H. Connell, J. P. E. Sellschop, C. G. Smallman, T. R. Anthony, W. F. BanholzerThe nuclear hyperfine structure of bond-centered muonium in 13C enriched diamond has been resolved using time-differential transverse-field muon spin rotation. The measured nearest-neighbor 13C hyperfine parameters are compared to theoretical values from a recent ab initio... (Read more)
- 819. Phys. Rev. B 47, 10899-10902 (1993) , “Defects in porous p-type Si: An electron-paramagnetic-resonance study”, H. J. von Bardeleben, D. Stievenard, A. Grosman, C. Ortega, J. SiejkaThe defects in p+ porous silicon of low and high porosity have been studied by using electron-paramagnetic-resonance (EPR) spectroscopy and compared with an impurity analysis obtained from nuclear reaction analysis (NRA). The EPR measurements show, in both high- and low-porosity samples,... (Read more)
- 820. Phys. Rev. B 47, 3620-3625 (1993) , “{H,B}, {H,C}, and {H,Si} pairs in silicon and germanium”, Dj. M. Maric, P. F. Meier, S. K. EstreicherThe interactions between interstitial H and substitutional B, C, and Si in crystalline silicon and germanium are studied in molecular clusters at the ab initio Hartree-Fock level with large basis sets. The energetics, electronic structures, and relative stabilities of these pairs are determined. Our... (Read more)
- 821. Phys. Rev. B 47, 3987 (1993) , “Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance”, K. Krambrock and J.-M. SpaethThe microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga... (Read more)
- 822. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 823. Phys. Rev. B 47, 7025 (1993) , “Electron-Paramagnetic-Resonance Investigation of the Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA defect consisting of a substitutional indium and an interstitial iron ion in silicon has been studied using the electron-paramagnetic-resonance (EPR) technique. The defect is found to appear in two different configurations, where the iron ion occupies two different interstitial positions near the... (Read more)
- 824. Phys. Rev. B 47, 8809 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. I. Level anticrossing in the 3A ground state”, X. -F. He, N. B. Manson, P. T. H. FiskRaman-heterodyne-detected paramagnetic resonance has been used to study the level anticrossing in the 3A state of the N-V defect in diamond. The electron-paramagnetic-resonance (EPR) frequencies are well accounted for by a triplet-spin Hamiltonian. Comparison of the EPR spectra with the... (Read more)
- 825. Phys. Rev. B 47, 8816 (1993) , “Paramagnetic resonance of photoexcited N-V defects in diamond. II. Hyperfine interaction with the 14N nucleus”, X. -F. He, N. B. Manson, P. T. H. FiskHyperfine interactions associated with the 14N nucleus in the diamond N-V defect have been investigated using Raman-heterodyne techniques. The measured nuclear-magnetic-resonance (NMR) and electron-nuclear-double-resonance frequencies were well accounted for by the triplet-spin... (Read more)
- 826. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
- 827. Phys. Rev. B 48, 17595 (1993) , “Nature of the native-defect ESR and hydrogen-dangling-bond centers in thin diamond films”, H. Jia, J. Shinar, D. P. Lang, M. PruskiThe X-band ESR of thin diamond films deposited from a mixture of 99.5% H2 and 0.5% CH4 is compared to those of films similarly prepared from D2-CD4 and H2-13CH4 mixtures. The main line and the satellites at ±7.2 G are... (Read more)
- 828. Phys. Rev. B 48, 17878-17884 (1993) , “Electron-spin-resonance studies of donors in wurtzite GaN”, W. E. Carlos, J. A. Freitas Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaElectron-spin-resonance (ESR) measurements have been performed on a series of wurtzite GaN films grown on sapphire substrates by low-pressure metal-organic chemical-vapor deposition. The sample set included films grown with both AlN and GaN buffer layers. The ESR signal results from residual donors... (Read more)
- 829. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 830. Phys. Rev. B 48, 4437 (1993) , “Identification of the BiGa heteroantisite defect in GaAs:Bi”, M. Kunzer, W. Jost, U. Kaufmann, H. M. Hobgood, R. N. ThomasGaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been... (Read more)
- 831. Phys. Lett. A 178, 205-208 (1993) , “A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs”, Y. Q. JiaH. J. von BardelebenElectron spin resonance studies of p-type ([Zn] = 7 × 1017 cm−3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm−1, the highest among those reported in electron- irradiated GaAs. We... (Read more)
- 832. Microelectron. Eng. 22, 143 (1993) , “An improved theory of spin dependent recombination : application to the Pb center at the Si-SiO2 interface”, M. Lannoo, D. Vuillaume, D. Deresmes , D. StiévenardWe propose an improved theory of the spin dependent recombination at defects in p-n junctions. This theory accounts for the experimental observations on the Pb center at the Si-SiO2 interface. (Read more)
- 833. Jpn. J. Appl. Phys. 32, L1715 (1993) , “Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy ”, Yoichi Kamiura*1, Yutaka Uno*2 and Fumio HashimotoCarbon-rich Czochralski Si shows anomalously rapid annihilation for all the species of thermal double donors at 470°C in two stages, which have good time correlations with the decrease of substitutional carbon density and also with the formation of two kinds of carbon-related new donors which... (Read more)
- 834. J. Phys.: Condens. Matter 5, 3019 (1993) , “ENDOR of the P2 centre in type-Ia diamonds”, J. A. van Wyk, J. H. N. LoubserThe P2 centre was the first defect observed in diamond with electron spin resonance. Because of a very complicated ESR spectrum many years elapsed before the correct model was determined. Accurate spin Hamiltonian parameters have been determined from extensive ENDOR measurements at room temperature.... (Read more)
- 835. J. Phys.: Condens. Matter 5, 7929 (1993) , “The R2 EPR centre and 1.685 eV absorption line in diamond”, A. Mainwood, J. E. Lowther, J. A. van WykThe R2 EPR centre and 1.685 eV zero-phonon line seen in the optical absorption spectrum of diamond. have been shown to correlate in intensity and are believed to be associated with the same defect. We propose that the defect responsible is a highly strained vacancy, the origin of strain possibly... (Read more)
- 836. J. Opt. Soc. Am. B 10, 913 (1993) , “Raman-heterodyne-detected nonlinear susceptibility with an arbitrary radio-frequency field strength”, X. -F. He, P. T. H. Fisk, N. B. MansonRaman-heterodyne-detected complex nonlinear susceptibility has been measured and analyzed in detail with a radio-frequency field strength varying from weak to strong. The experiments were carried out on the nitrogen-vacancy color center in diamond involving both nuclear magnetic resonance and electron paramagnetic resonance transitions. The dispersive and the absorptive components of the nonlinear susceptibility are shown to have different saturation behaviors, and an anomalous-amplitude line shape arises where the dispersion component dominates in the response spectrum at high RF powers. The experimental results are found to be in good agreement with theoretical profiles, where no adjustable parameter is included in the calculation. (Read more)
- 837. J. Catalysis 140, 585-600 (1993) , “Studies of Gas Adsorption on ZnO Using ESR, FTIR Spectroscopy, and MHE (Microwave Hall Effect) Measurements”, Na B. K., Walters A. B. and Vannice M. A.This paper describes the application of a new technique-Microwave Hall Effect (MHE) measurements-to measure electron mobilities and to determine the effect of adsorption on electron densities of powders. Conduction electron densities calculated from microwave measurements of both mobilities and... (Read more)
- 838. J. Appl. Phys. 73, 1797 (1993) , “Magnetic Resonance Spectroscopy in Silver-Doped Silicon”, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn silver-doped silicon, several new electron paramagnetic resonance spectra were observed. Three of these, labeled Si-NL45, Si-NL46, and Si-NL47, were detected in n-type samples. The spectra have trigonal symmetry; the effective electron spin value S equals 1/2. The spectra Si-NL45... (Read more)
- 839. J. Appl. Phys. 73, 8519 (1993) , “Generation Mechanisms of Paramagnetic Centers by Gamma-Ray Irradiation at and near the Si/SiO2 Interface”, K. Awazu, K. Watanabe, H. Kawazoe.Pb (·SiSi3) and E (·SiO3) centers in the Si/SiO2 structure under gamma-ray radiation are studied with the electron-spin-resonance technique. The Si/SiO2 structures of (111), (110), and (100) planes... (Read more)
- 840. J. Appl. Phys. 74, 275-283 (1993) , “Characterization and depth profiling of E' defects in buried SiO2”, K. Vanheusden and A. StesmansOxygen-vacancy defects (E) generated at the surface of buried SiO2 (BOX) layers formed by O + implantation during the separation by implantation of oxygen process have been studied by electron spin resonance at 4.3 K. The E generation tool used was exposure to a... (Read more)
- 841. J. Appl. Phys. 74, 5901-5903 (1993) , “The nature of donor conduction in n-GaN”, M. Asif Khan, D. T. Olson, J. N. Kuznia, W. E. Carlos, J. A. Freitas, JrSingle crystal GaN thin films resulting from various deposition techniques are usually dominated by residual donors. To date, the true nature of this donor conduction is not known. Nitrogen vacancies, residual oxygen, and growth defects are cited as potential causes for the residual n-type... (Read more)
- 842. IEEE Transactions on Electron Devices 40, 986-993 (1993) , “Correlation of Stress-Induced Leakage Current in Thin Oxides with Trap Generation Inside the Oxides”, D. J. Dumin, J. R. Maddux
- 843. Colloids and Surf. A 72, 161-164 (1993) , “Study of a paramagnetic center on an SiO-treated GaAs surface”, G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen , W. L. WarrenWe have observed enhanced photoluminescence and an isotropic, singlet electron paramagnetic resonance (EPR) signal from samples of SI c-GaAs as a result of a thermal annealing treatment with SiO under vacuum. The treated samples showed a tenfold increase in photoluminescence. The EPR signal was... (Read more)
- 844. Appl. Phys. Lett. 62, 273 (1993) , “Shallow Donor in Separation by Implantation of Oxygen Structures Revealed by Electric-Field Modulated Electron Spin Resonance”, K. Vanheusden and A. StesmansElectric-field modulated K-band electron spin resonance measurements on Si/SiO2/Si structures, formed by implantation of oxygen (SIMOX), were carried out at 4.330 K. Large area metal-oxide-silicon capacitors were fabricated on these structures and optimized for cavity... (Read more)
- 845. Appl. Phys. Lett. 62, 40-42 (1993) , “Room temperature reactions involving silicon dangling bond centers and molecular hydrogen in amorphous SiO2 thin films on silicon”, J. F. Conley and P. M. LenahanExposing thin films of amorphous SiO2 to molecular hydrogen at room temperature converts some silicon dangling bond defects, E centers, into two hydrogen coupled complexes. These reactions may play important roles in radiation and hot carrier instabilities in metal/oxide/silicon... (Read more)
- 846. Appl. Phys. Lett. 62, 943 (1993) , “Cobalt self-diffusion during cobalt silicide growth”, M. Diale and C. Challens and E. C. ZinguThe flux of atoms during Si/Co interdiffusion has been investigated by means of thin tantalum marker layers imbedded in the deposited Co layer. The silicide phase CoSi is found to grow in the Si/CoSi/Co structure without any conversion of CoSi to Co2Si. Cobalt is found to be the dominant... (Read more)
- 847. Appl. Phys. Lett. 63, 1510-1512 (1993) , “Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen”, E. Cartier, J. H. Stathis, and D. A. BuchananAtomic hydrogen is found to simultaneously passivate and depassivate silicon dangling bonds at the Si(111)/SiO2 interface at room temperature via the reactions Pb+H0" align="bottom">PbH and... (Read more)
- 848. Appl. Phys. Lett. 63, 2673 (1993) , “Observation of optically detected magnetic resonance in GaN films”, E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, J. N. KuzniaOptically detected magnetic resonance has been observed from GaN. Two magnetic resonances have been detected on the 2.2 eV-deep photoluminescence band. The first resonance is sharp [full width at half-maximum (FWHM) ~2.2 mT] with g=1.9515±0.0002 and... (Read more)
- 849. Appl. Phys. Lett. 63, 352 (1993) , “General expression for the electrically detected magnetic resonance signal from semiconductors”, Z. Xiong and D. J. MillerA general expression is obtained for the electrically detected magnetic resonance (EDMR) signal from semiconductors based on the electron-hole pair model. The expression is applicable for all values of the trapping, dissociation, and recombination rates of the levels involved. Measurements of the... (Read more)
- 850. Appl. Phys. Lett. 63, 920-922 (1993) , “Nature of Pb-like dangling-orbital centers in luminescent porous silicon”, F. C. Rong, J. F. Harvey, E. H. Poindexter, G. J. GerardiThe Pb-like dangling-orbit centers in luminescent porous silicon (LPSi) have been enhanced to very high concentration (1015 cm2) by gentle oxidation. High signal-to-noise ratio and very sharp lines enable the g-value maps, and... (Read more)
- 851. Solid State Commun. 90, 401 (1994) , “Electron Paramagnetic Resonance Study of the NL51 Spectrum in Hydrogen-Implanted Silicon”, P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, Yu. V. Gorelkinskii.High-resistivity silicon samples have been implanted with hydrogen and deuterium (dose 5 × 1015 cm−2). After a short heat treatment at low temperatures (20 min at 380–540°C) several electron paramagnetic resonance (EPR) spectra could be detected upon illumination. The most... (Read more)
- 852. Semicond. Sci. Technol. 9, 1346 (1994) , “On the Nature and Structures of Different Heat Treatment Centres in n- and p-Type Silicon”, N. Meilwes, J. –M. Spaeth, V. V. Emtsev, G. A. Oganesyan.Thermally induced defects in oxygen-rich silicon are the thermal donors (TDDS) and the so-called NL10 defects. These defects are formed by annealing at temperatures around 450 degrees C. Whereas the TDDS have a unique nature, some NL10 defects probably have different structures in differently doped... (Read more)
- 853. Semicond. Sci. Technol. 9, 1623 (1994) , “Thermal Donors in Silicon: an Investigation of Their Structure with Electron Nuclear Double Resonance”, N. Meilwes, J. –M. Spaeth, W. Götz, G. Pensl.Singly ionized thermal double donors (TDD+), which have the so-called NL8 EPR spectrum, have been investigated with electron nuclear double resonance (ENDOR) in silicon doped with various acceptors (Al,B,In,Ga). No differences were detected in the ENDOR spectra and no signals due to any... (Read more)
- 854. Rev.Mod.Phys 66, 841 (1994) , “Theory of positrons in solids and on solid surfaces ”, M. J. Puska and R. M. NieminenVarious experimental methods based on positron annihilation have evolved into important tools for researching the structure and properties of condensed matter. In particular, positron techniques are useful for the investigation of defects in solids and for the investigation of solid surfaces.... (Read more)
- 855. Proc. symp. on the degradation od electronic devices due to device operation as well as crystalline and process-induced defects 94-1, 221-234 (1994) , ECS (ISBN:1-56677-037-8) , “Spin dependent recombination in Si p-n junctions”, B. K. Meyer , P. Christmann , W. Stadler, H. Overhof, J.-M. Spaeth, S. Greulich-Weber, B. Stich
- 856. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 857. Phys. Rev. Lett. 72, 2939 (1994) , “Observation of Rapid Direct Charge Transfer between Deep Defects in Silicon”, A. M. Frens, M. T. Bennebroek, A. Zakrzewski, J. Schmidt, W. M. Chen, E. Janzén, J. L. Lindström, B. Monemar.Direct electron transfer is observed between two deep defects in silicon upon selective laser excitation with an energy lower than the band gap. This transfer is shown to be very efficient when one of the defects is a pseudodonor and the other is a dominant recombination center. It is argued that... (Read more)
- 858. Phys. Rev. Lett. 73, 130 (1994) , “Inverted order of acceptor and donor levels of monatomic hydrogen in silicon”, N. M. Johnson, C. Herring, and Chris G. Van de WalleThe acceptor level É›A of monatomic hydrogen (2H) in crystalline silicon has been located at É›A≊ɛm+0.00 eV, where É›m is the midgap level, more than 0.3 eV below the recently identified donor level. Thus, hydrogen has a large negative... (Read more)
- 859. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 860. Phys. Rev. Lett. 73, 1457 (1994) , “Stallinga, Gregorkiewicz, and Ammerlaan Reply”, P. Stallinga, T. Gregorkiewicz, and C. A. J. AmmerlaanA drift instability due to electrons trapped in a series of shallow magnetic troughs has been observed and compared to theoretical estimates. The instability, identified as Kadomtsev's trapped-electron mode, is maximum at a density lower than estimated from the theory. (Read more)
- 861. Phys. Rev. Lett. 73, 3419 (1994) , “Non-Arrhenius Reorientation Kinetics for the B-H Complex in Si: Evidence for Thermally Assisted Tunneling”, Y. Michael Cheng and Michael StavolaThe B-H complex in Si can be aligned by stress and reorients with an activation energy of roughly 0.2 eV. We combine new measurements of the reorientation kinetics of the B-H complex made by the stress-induced dichroism technique with previous internal friction results to show that the reorientation... (Read more)
- 862. Phys. Rev. B 49, 10307 (1994) , “Trigonal Manganese Cluster in Silicon: An Electron-Paramagnetic-Resonance Study”, J. Kreissl, W. Gehlhoff, H. Vollmer.Besides the known tetrahedral Mn40 cluster, a second Mn cluster is observed by electron paramagnetic resonance in high-resistivity silicon doped with manganese. The spectrum shows trigonal symmetry. The analysis of the fine structure and the hyperfine structure suggests that... (Read more)
- 863. Phys. Rev. B 49, 10999 (1994) , “Ligand ENDOR on substitutional manganese in GaAs”, S. J. C. H. M. van Gisbergen, A. A. Ezhevskii, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional Mn2+ center in GaAs. On the basis of these experiments it is concluded that the Mn2+ center is substitutional on a Ga site. From the electron paramagnetic resonance... (Read more)
- 864. Phys. Rev. B 49, 11010 (1994) , “Strongly perturbed negative-vacancy-related centers in diamond”, J. E. Lowther and J. A. van WykSeveral related defect centers have been observed in synthetic and type-Ib diamond following electron or neutron irradiation. Such centers, termed W centers, have similar characteristic features in that all have a spin of S=3/2 and exhibit an extremely large zero-field splitting. Spin-Hamiltonian... (Read more)
- 865. Phys. Rev. B 49, 13423 (1994) , “EPR Spectroscopy of Platinum-Hydrogen Complexes in Silicon”, M. Höhne, U. Juda, Yu. V. Martynov, T. Gregorkiewicz, C. A. J. Ammerlaan, L. S. Vlasenko.Two similar defects in silicon, resulting from doping with platinum in an atmosphere containing water vapor, were studied by means of electron paramagnetic resonance. Both spectra have effective electron spin S=1/2, and exhibit platinum- and hydrogen-related hyperfine structure and remarkable... (Read more)
- 866. Phys. Rev. B 49, 15392 (1994) , “g tensor for substitutional nitrogen in diamond”, S. Zhang, S. C. Ke, M. E. Zvanut, H. T. Tohver, Y. K. VohraWe report a measurement of an axially symmetric g tensor for the substitutional nitrogen center in type-IIa synthetic isopure 12C diamond. Because the nitrogen concentration of the diamond studied is exceptionally low the electron-paramagnetic-resonance linewidth is sufficiently narrow to... (Read more)
- 867. Phys. Rev. B 49, 16983 (1994) , “Electrical and thermal properties of structurally metastable iron-boron pairs in silicon ”, H. Nakashima, T. Sadoh, and T. TsurushimaStructurally metastable iron-boron pairs in silicon have been detected using dark- or photocapacitance transient techniques combined with minority-carrier injection below 200 K. Five levels at EC-0.43, 0.46, 0.52, and 0.54 eV and EV+0.53 eV are observed as the metastable... (Read more)
- 868. Phys. Rev. B 49, 16999 (1994) , “Distant Iron-Shallow-Donor Pairs in Silicon Detected by Electron Paramagnetic Resonance”, M. Höhne, U. Juda, H. Riemann, J. –M. Spaeth, S. Greulich-Weber.The electron-paramagnetic-resonance transitions of isolated neutral interstitial iron (Fei0) in n-type silicon show a satellite structure, which is clearly detectable for donor concentrations (P or As, respectively) above 1015 cm-3. The satellite structure... (Read more)
- 869. Phys. Rev. B 49, 7964 (1994) , “Electron Paramagnetic Resonance of Iron- and Aluminum-Related Defects in Silicon”, K. Irmscher, T. Kind, and W. GehlhoffSilicon codoped with aluminum and iron is investigated by electron paramagnetic resonance. Three spectra of trigonal, two of orthorhombic and two of monoclinic symmetry are detected and interpreted as being associated with iron- and aluminum-related defects. Most of the spectra are known but the... (Read more)
- 870. Phys. Rev. B 50, 14710-14713 (1994) , “Defect-defect hole transfer and the identity of border traps in SiO2 films”, W. L. Warren, D. M. Fleetwood, M. R. Shaneyfelt, P. S. Winokur, R. A. B. DevineWe have found evidence for hole-transfer events between oxygen-vacancy-related defects in thermal SiO2 films selectively injected with holes using electron paramagnetic resonance (EPR) and capacitance-voltage measurements. We find that hole injection into SiO2 films reveals two... (Read more)
- 871. Phys. Rev. B 50, 1511 (1994) , “Electric-Dipole Spin-Resonance Study on Extended Defects in Czochralski-Grown Silicon Developed by Thermal Treatment”, T. R. Mchedlidze, V. V. Kveder, J. Jablonski, and K. SuminoA series of electric-dipole spin-resonance (EDSR) lines, termed Si-SC1 lines, are found to develop in Czochralski-grown Si crystals due to annealing at 650 °C. Some of these lines are very close to Si-2K and Si-3K reported in a previous work. The experimental data are self-consistently explained by... (Read more)
- 872. Phys. Rev. B 50, 15449 (1994) , “EPR and ENDOR Study of the Pb Center in Porous Silicon”, V. Ya. Bratus’, S. S. Ishchenko, S. M. Okulov, I. P. Vorona, H. J. von Bardeleben, M. Schoisswohl.The Pb center at the (111) Si-SiO2 interface has been studied with electron-nuclear-double-resonance (ENDOR) spectroscopy taking advantage of the high specific interface area of oxidized porous Si samples. The ENDOR spectrum consists only of two structureless lines at the... (Read more)
- 873. Phys. Rev. B 50, 15586 (1994) , “EPR and 14N electron-nuclear double-resonance measurements on the ionized nearest-neighbor dinitrogen center in diamond”, O. D. Tucker, M. E. Newton, J. M. BakerThe nearest-neighbor substitutional nitrogen center [N-N]0 (A center), is one of the most common defects in natural diamond. [N-N]0 is diamagnetic and therefore cannot be studied by electron paramagnetic resonance (EPR). However, the [N-N]+ center is paramagnetic,... (Read more)
- 874. Phys. Rev. B 50, 17618 (1994) , “Acceptor level of substitutional Ni in diamond”, D. M. Hofmann, M. Ludwig, P. Christmann, D. Volm, B. K. Meyer, L. Pereira, L. Santos, E. PereiraSubstitutional Ni- in synthetic diamonds has been investigated by electron-paramagnetic resonance (EPR) and photo-EPR. The photo-EPR investigation shows that the Ni- EPR signal can be diminished by optical illumination, and the threshold energy of 2.47±0.02 eV suggests that the... (Read more)
- 875. Phys. Rev. B 50, 2645 (1994) , “Magnetic-rasonance studies of tellurium-doped AlxGa1-xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 876. Phys. Rev. B 50, 2645 (1994) , “Magnetic-resonance studies of tellurium-doped AlxGa1–xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 877. Phys. Rev. B 50, 5189 (1994) , “Theoretical investigation of the dynamic process of the illumination of GaAs”, Ren Guang-bao, Wang Zhan-guo, Xu Bo, Zhou BingThe dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usually ascribed to the existence of EL2 states and their photodriven metastable states. To understand the... (Read more)
- 878. Phys. Rev. B 50, 7365 (1994) , “S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance”, W. M. Chen, M. Singh, B. Monemar, A. Henry, E. Janzén, A. M. Frens, M. T. Bennebroek, J. Schmidt.We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR) at the X band and the K band. Two photoluminescence emissions arising from the bound-exciton (BE) recombination at the defect in two different configurations... (Read more)
- 879. Mater. Sci. Forum 143-147, 1337 (1994) , “Electrically detected electron paramagnetic resonance”, S.Greulich-Weber
- 880. Mater. Lett. 19, 53-56 (1994) , “The effect of NiO doping on the stoichiometry of ZnO”, P. Lot'k, J. Lounek, L. Koudelka, L. Bene and E. ernokováThe additions of NiO (0–2.0 mol%) to ZnO result in a decrease of the parameter c of its crystal lattice and its high-frequency electrical conductivity and in an elimination of the ESR band with g = 1.96. The observed changes were ascribed to the formation of Zn1−xNixO solid solution,... (Read more)
- 881. Jpn. J. Appl. Phys. 33, 1872 (1994) , “Temperature Dependence of ESR Lines Related to Phosphorus in Silicon”, M. Morooka, M. Tokita, T. Kato, I. Tsurumi.Temperature dependence of ESR in a silicon crystal containing 1.3×1017 phosphorus atoms/cm3 has been investigated at 4-40 K. The ESR signals depend strongly on the specimen temperature. Typical hyperfine structures of... (Read more)
- 882. Jpn. J. Appl. Phys. 33, L1374 (1994) , “Defects Introduced by Ar Plasma Exposure in GaAs Probed by Monoenergetic Positron Beam ”, Akira Uedono, Takao Kawano1, Shoichiro Tanigawa, Kazumi Wada2 and Hideo Nakanishi2Ar-plasma-induced defects in n-type GaAs were probed by a monoenergetic positron beam. The depth distribution of the defects was obtained from measurements of Doppler broadening profiles of the annihilation radiation as a function of incident positron energy. The damaged layer induced by the... (Read more)
- 883. J. Phys.: Condens. Matter 6, 551 (1994) , “13C, 14N and 15N ENDOR measurements on the single substitutional nitrogen centre (P1) in diamond”, A. Cox, M. E. Newton, J. M. BakerNew ENDOR measurements on the single substitutional nitrogen centre in diamond are reported. The CW-ENDOR mechanism utilizes cross relaxation, and measurements have been made on both 14N and 15N, as well as the first detailed 13C ENDOR study on the isotope at the... (Read more)
- 884. J. Phys.: Condens. Matter 6, 6721 (1994) , “A perturbed vacancy model for the R1 EPR centre in diamond”, J. E. Lowther, A. MainwoodRadiation damage produces many defects in diamond that are associated with lattice vacancies and interstitial atoms. EPR has proved to be a valuable tool in the characterization of such defects although often detailed models of the defect structure have not been attempted. It is shown that the R1... (Read more)
- 885. J. Phys.: Condens. Matter 6, 801 (1994) , “EPR of radiation damage centres W11, W12, W13 and W14 in type Ib diamond”, J. A. van WykW11, W12, W13 and W14 are four paramagnetic defects with S=3/2 observed in electron or neutron irradiated type Ib diamonds. Although spin Hamiltonian parameters have been determined that describe the ESR results very well, it will be shown that the normal spin Hamiltonian with... (Read more)
- 886. J. Phys. Chem. Solids 55, 1353-1356 (1994) , “EPR of [FA]0 centres in zinc chalcogenides”, K. Tarkpea, A. Ots , V. Nikitenko[FA]0 centres in ZnO and ZnS single crystals have been detected by electron paramagnetic resonance. The [FA]0 centre consists of an anion vacancy with a localized electron and a monovalent substitutional impurity replacing an adjacent Zn2+ ion. This impurity is probably a Li+ ion in the case of ZnO... (Read more)
- 887. J. Non-Cryst. Solids 179, 1-9 (1994) , “The many varieties of E′ centers: a review”, Robert A. WeeksThree varieties of E′ centers with a spin state, S = 1/2, and with a G-tensor, Gx Gy 2.0003, Gz 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz. The atomic structure of two of these had an hydrogen ion (proton) in nearby sites and hence... (Read more)
- 888. J. Non-Cryst. Solids 179, 39-50 (1994) , “Paramagnetic resonance of E′-type centers in Si-implanted amorphous SiO2. Si29 hyperfine structure and characteristics of Zeeman resonances*1”, H. Hosono, H. Kawazoe, K. Oyoshi, S. TanakaElectron paramagnetic resonance spectra were measured on SiO2 glasses implanted with Si ions to a fluence of 6 × 1016 cm−2 at an acceleration voltage of 160 kV. Three sets of doublets with different separation were observed in Si29-implanted substrates and were ascribed to primary... (Read more)
- 889. J. Appl. Phys. 75, 1047-1058 (1994) , “Generation aspects of the delocalized intrinsic EX defect in thermal SiO2”, A. Stesmans and F. ScheerlinckA K-band electron-spin-resonance study of the appearance of the delocalized intrinsic EX center in dry thermal SiO2 was performed on (001) and (111) Si/SiO2. The defect is found in both structures in nearly identical spin densities, 1.2×1012... (Read more)
- 890. J. Appl. Phys. 75, 2929 (1994) , “Model for NL10 Thermal Donors Formed in Annealed Oxygen-Rich Silicon Crystals”, Akito Hara, Masaki Aoki, Masaaki Koizuka, and Tetsuo FukudaElectron spin resonance (ESR) studies have shown that NL10 thermal donors are formed in oxygen-rich silicon (Si) crystals after annealing. In initial NL10 formation stage, it has C2v symmetry with the principle g values g[100]=1.99982, g[01]=1.99799,... (Read more)
- 891. J. Appl. Phys. 75, 7559 (1994) , “Observation of Cr3 + electron paramagnetic resonance center in GaAs co-doped with Cr and In”, Young Ju Park, Tae Ho Yeom, Suk-Ki Min, Il-Woo Park, Sung Ho ChohWe have observed a well-defined Cr3 + (3d3) electron paramagnetic resonance signal at 4 K in vertical gradient freeze semi-insulating GaAs single crystal through a co-doping with Cr and In. On the basis of analyzing the rotation pattern of the Cr3 + center,... (Read more)
- 892. Hyperfine Interactions 84, 397 (1994) , “Studies of divacancy in Si using positron lifetime measurement ”, Studies of divacancy in Si using positron lifetime measurementThe charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V2 2-, V2 – and V2 0 at 300 K were about 6×10-14, 3×10-14 and 0.1–3×10-14 cm2, respectively. For V2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V2 0 and V2 2- have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V2 0 ) and 21 meV (V2 2- ). The appearance of a shallow level for V2 0 can not be explained by a conventional "Rydberg state" model. The lifetime (290–300 ps) in V2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V2 2- increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V2 2- is shorter than that in V2 0 at low temperature, which is due to the excess electron density in V2 2- . At high temperature, however, the longer lifetime of V2 2- than that of V2 0 is attributed to lattice relaxation around V2 2- . (Read more)
- 893. Diamond Relat. Mater. 4, 53 (1994) , “Slow emission of the 2.56 eV centre in synthetic diamond”, E. Pereira, L. Santos, L. Pereira, D. M. Hofmann, P. Christmann, W. Stadler and B. K. MeyerThe 2.56 eV luminescence band in synthetic diamond is studied in detail by time resolved photoluminescence and spin resonance measurements. The temperature dependence of the vibronic band shape indicates that between 2 and 20 K there is a noticeable change in relative intensities of the two dominant... (Read more)
- 894. Appl. Phys. Lett. 64, 1091 (1994) , “Electron paramagnetic resonance forbidden transitions from hydrogen in polycrystalline diamond films”, S. H. Holder, L. G. Rowan, J. J. KrebsInvestigation of polycrystalline diamond films by electron paramagnetic resonance at 9.5 and 35 GHZ has revealed the presence of forbidden transitions resulting from a simultaneous microwave induced flipping of unpaired electron spins and environmental nuclear spins. The spacing of the resonance... (Read more)
- 895. Appl. Phys. Lett. 64, 1690 (1994) , “Temperature-dependent study of spin-dependent recombination at silicon dangling bonds”, D. Vuillaume, D. Deresmes, and D. StiévenardElectrical detection of magnetic resonance is used in a large temperature range (150350 K) to analyze the spin-dependent recombination properties of silicon dangling bonds at the Si-SiO2 interface (created by high-field electron injections) and of silicon dangling bond clusters in... (Read more)
- 896. Appl. Phys. Lett. 65, 2287 (1994) , “Identification of phosphorus in diamond thin films using electron paramagnetic-resonance spectroscopy”, M. E. Zvanut, W. E. Carlos, J. A. Freitas, Jr., K. D. Jamison, R. P. HellmerAn electron paramagnetic-resonance study of diamond films doped by implantation of phosphorus during film deposition is reported. Samples with nominal phosphorus concentration between 1016 and 1017 cm 3 exhibit two isotropic lines of equal intensity separated... (Read more)
- 897. Appl. Phys. Lett. 65, 2951 (1994) , “Nitrogen in the isotopically enriched 12C diamond”, S. Zhang, M. E. Zvanut, Y. K. Vohra, S. S. VagaraliAn electron paramagnetic resonance (EPR) characterization study of isotopically enriched 12C diamond grown by General Electric has been carried out. While other commonly used techniques detect no nitrogen in this diamond, the clear EPR spectrum consistently measured a nitrogen... (Read more)
- 898. Appl. Phys. Lett. 65, 3260 (1994) , “Paramagnetic centers at and near the Si/SiOx interface in porous silicon”, B. Pivac, B. Rakvin, L. Pavesi.Formation of paramagnetic centers in aged porous silicon samples is studied by electron paramagnetic resonance. Samples oxidized by aging in air at room temperature exhibit the Pb centers as dominant defects. These are formed at the interfaces between the Si nanocrystallites... (Read more)
- 899. Appl. Phys. Lett. 65, 3320 (1994) , “Power saturation and the effect of argon on the electron spin resonance of diamond deposited from a microwave plasma”, P. B. Lukins and J. KhachanElectron spin resonance (ESR) of microwave plasma chemical vapor deposition diamond shows peaks associated with (i) a P1 substitutional nitrogen defect center, (ii) spin-spin interactions between the paramagnetic sites and neighboring protons, and (iii) a possible contribution from graphitic... (Read more)
- 900. Solid State Commun. 93, 383 (1995) , “Gold in Silicon and Other Analogous Donors and Acceptors”, Mats Kleverman, AnnaLena Thilderkvist, Günter Grossmann, Hermann G. Grimmeiss and George D. WatkinsRecent results on the substitutional Au and interstitial Fe deep-level impurities in silicon are discussed in some detail. Their excitation spectra are due to transitions from a deep ground state to shallow states. The good understanding of the electronic structure of the shallow states as well as... (Read more)
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