Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
- 701. J. Appl. Phys. 86, 1888 (1999) , “Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity”, T. Laine, K. Saarinen, P. Hautojärvi, and C. CorbelWe use a low-energy positron beam to study the influence of doping and stoichiometry on the native defects in GaAs grown by molecular-beam epitaxy at 250 °C. Ga vacancies are identified in all samples by measuring the momentum distribution of annihilating core electrons. The charge of... (Read more)
- 702. J. Appl. Phys. 87, 249 (2000) , “Photoionization of deep centers in Al2O3”, Von H. Whitley and S. W. S. McKeeverThe optical threshold energies for photoionization of several different electron traps in Al2O3 have been determined using photoconductivity and optically stimulated luminescence (OSL). Stimulation of the photoconductivity and OSL is observed over a wide range of optical... (Read more)
- 703. J. Appl. Phys. 87, 223 (2000) , “Photocapacitive detection of hole emission from DX center in n-type Al0.3Ga0.7As doped with Te”, Akihiko MuraiPhotocapacitance (PHCAP) measurements are applied to liquid-phase epitaxially grown n- Al0.3Ga0.7As crystals at different temperatures. The PHCAP measurements revealed deep levels optically located at 0.5 eV below the conduction band and 1.5 eV above the valence band... (Read more)
- 704. J. Appl. Phys. 87, 207 (2000) , “Photostimulated luminescence process in the x-ray storage phosphor CsBr:Ga+”, U. RogulisCsBr doped with Ga+ has previously proved to be an efficient X-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2+. By measuring the magnetic circular dichroism of the optical absorption (MCDA), the MCDA-detected electron... (Read more)
- 705. J. Appl. Phys. 87, 1659 (2000) , “Annealing properties of defects during Si-on-insulator fabrication by low-dose oxygen implantation studied by monoenergetic positron beams”, Akira Uedono and Shoichiro TanigawaThe depth distributions and species of defects in Si on insulator (SOI) fabricated by low-dose oxygen implantation were determined from measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons. The temperature range for the annealing of the defects... (Read more)
- 706. J. Appl. Phys. 87, 117 (2000) , “Zinc self-diffusion, electrical properties, and defect structure of undoped, single crystal zinc oxide”, Gregory W. TomlinsZinc self-diffusion was measured in single crystal zinc oxide using nonradioactive 70Zn as the tracer isotope and secondary ion mass spectrometry for data collection. Crystal mass was closely monitored to measure ZnO evaporation. Diffusion coefficients were isotropic with an activation... (Read more)
- 707. J. Appl. Phys. 86, 7186 (1999) , “Time-resolved spectroscopy of excitonic luminescence from GaN homoepitaxial layers”, Yoichi Yamada, Chiharu Sasaki, Satoshi Kurai, and Tsunemasa TaguchiRecombination dynamics of excitonic transitions in GaN homoepitaxial layers has been studied by means of time-resolved luminescence spectroscopy. An excitation-density-dependent transition of the dominant radiative recombination process at 3.471 eV from donor-bound excitons to biexcitons was clearly... (Read more)
- 708. J. Appl. Phys. 86, 6697 (1999) , “Implant dose dependence in doping Si atoms from a-Si:H films into S + -implanted GaAs”, Katsuhiro Yokota, Kazuhiro Nakamura, Tomoyuki Ishizu, and Masanori SakaguchiSulfur (S + ) ions were implanted into gallium arsenide (GaAs) at 50 keV at various doses. Hydrogenated amorphous silicon (a-Si:H) films were deposited on the surface of the S + -implanted GaAs using a radio-frequency glow discharge system. The samples were annealed in... (Read more)
- 709. J. Appl. Phys. 86, 6677 (1999) , “Characterization of defect-related optical absorption in ZnGeP2”, S. D. Setzler, P. G. Schunemann, and T. M. PollakA broad optical absorption band with a peak near 1 µm is present in most single crystals of ZnGeP2. These same crystals have an electron paramagnetic resonance (EPR) signal which has been assigned to singly ionized zinc vacancies. A direct correlation between the intensity of the... (Read more)
- 710. J. Appl. Phys. 86, 6068 (1999) , “S and Si ion implantation in GaSb grown on GaAs”, Mulpuri V. Rao, Alok K. Berry, and Thang Q. DoSingle and multiple energy S and Si ion implantations were performed at room temperature (RT) and 200 °C into GaSb epitaxial layers grown on semi-insulating GaAs substrates. The implanted material was annealed with a Si3N4 cap at 400600 °C for 5 min. Secondary ion... (Read more)
- 711. J. Appl. Phys. 86, 6039 (1999) , “Transient enhanced diffusion of aluminum in SiC during high temperature ion implantation”, I. O. Usov, A. A. Suvorova, V. V. Sokolov, and Y. A. Kudryavtsev6HSiC wafers were implanted at room temperature (RT) and at 1700 °C high temperature (HT) with 50 keVAl + ions to doses from 1.4×1014 to 1.4×1016 cm2. Compared to samples implanted at RT, the samples implanted at high... (Read more)
- 712. J. Appl. Phys. 86, 5909 (1999) , “Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate”, H. Boudinov, J. P. de Souza, and C. K. SaulElectrical activation of In of 18%52% of the implanted dose (5×1014 cm2) was obtained in Si samples having a C + coimplantation after rapid thermal annealing (RTA) at 8001000 °C for 15 s. This electrical activation yield markedly... (Read more)
- 713. J. Appl. Phys. 86, 5630 (1999) , “Light-illumination-induced transformation of electron traps in hydrogen-implanted n-type silicon”, Yutaka Tokuda and Hitoshi ShimadaLight-illumination-induced transformation of electron traps in 170 keV hydrogen-implanted n-type silicon with a dose of 2×1010 cm2 has been studied with deep level transient spectroscopy for fabricated gold Schottky diodes. In addition to the well-known... (Read more)
- 714. J. Appl. Phys. 86, 5624 (1999) , “Theoretical investigation of shallow acceptors confined in Si/Si1–xGex quantum well structures”, Q. X. Zhao and M. WillanderEnergy levels of the shallow acceptor states have been calculated for center-doped Si/Si1xGex/Si quantum wells. The impurity states were calculated using an effective-mass theory that accounts for valence-band mixing as well as the mismatch of band... (Read more)
- 715. J. Appl. Phys. 86, 5392 (1999) , “Oxygen-related defects in O + -implanted 6H–SiC studied by a monoenergetic positron beam”, Akira Uedono and Shoichiro TanigawaVacancy-type defects and their annealing properties for O + - or N2 + " align="middle">-implanted 6HSiC were studied using a monoenergetic positron beam. For ion-implanted specimens with a dose of 1×1013 cm2, the mean size of open volume... (Read more)
- 716. J. Appl. Phys. 86, 5385 (1999) , “Defects in p+-gate metal–oxide–semiconductor structures probed by monoenergetic positron beams”, Akira Uedono, Masako Hiketa, and Shoichiro TanigawaDefects in p+-gate metaloxidesemiconductor structures were probed using monoenergetic positron beams. Doppler broadening profiles of the annihilation radiation and lifetime spectra of positrons were measured for BF2+" align="middle">- or B +... (Read more)
- 717. J. Appl. Phys. 86, 5372 (1999) , “Copper complexes in silicon”, Minoru Nakamura and Hitoshi IwasakiIn order to investigate the exchange between copper complexes (Cu centers) in silicon crystal, the change of the photoluminescence (PL) intensity of the Cu center (Cu PL center; no-phonon peak: 1.014 eV) with annealing time was measured for p-type float-zone grown silicon crystals diffused... (Read more)
- 718. J. Appl. Phys. 86, 5305 (1999) , “Photoluminescence study of deep levels in CuGaTe2 crystals”, J. Krustok and J. RaudojaA deep photoluminscence band at 0.95 eV was studied in CuGaTe2 crystals. The shape of this band did not change with laser power and no j shift was detected. This band shifts towards higher energy with increasing temperature and its shape becomes more asymmetric. The activation... (Read more)
- 719. J. Appl. Phys. 86, 5040 (1999) , “Fermi level control and deep levels in semi-insulating 4H–SiC”, W. C. Mitchel, R. Perrin, J. Goldstein, A. Saxler, M. Roth, S. R. Smith, and J. S. SolomonTemperature dependent Hall effect, optical admittance spectroscopy, and optical absorption measurements of semi-insulating bulk 4HSiC are reported. Both intentionally vanadium doped material and commercial grade semi-insulating material were investigated. The carrier concentration versus... (Read more)
- 720. J. Appl. Phys. 86, 4865 (1999) , “Thermal properties of H-related complexes in electron-irradiated Si doped with H”, Masashi SuezawaThe thermal properties, namely, the thermal stability and the activation energy, of H-point defect complexes in Si were investigated. Specimens were doped with H by annealing in H2 gas followed by quenching. Then, they were irradiated by 3 MV electrons at room temperature. Subsequently,... (Read more)
- 721. J. Appl. Phys. 86, 4861 (1999) , “Room-temperature vacancy migration in crystalline Si from an ion-implanted surface layer”, Arne Nylandsted LarsenMigration of vacancies in crystalline, n-type silicon at room temperature from Ge+-implanted (150 keV, 5×1091×1011 cm2) surface layers was studied by tracing the presence of PV pairs (E centers) in the underlying... (Read more)
- 722. J. Appl. Phys. 86, 4855 (1999) , “Electrical characterization of He-ion implantation-induced deep levels in p+n InP junctions”, L. Quintanilla, R. Pinacho, L. Enríquez, R. Peláez, S. Dueñas, E. Castán, L. Bailón, and J. BarbollaThe electrical characterization of He-ion implantation-induced deep levels existing in fully implanted p+n InP junctions isolated by He bombardment is reported in this work. An electron trap located at 0.19 eV below the conduction band and a hole trap located at 0.13 eV... (Read more)
- 723. J. Appl. Phys. 86, 4703 (1999) , “Formation of SiC-surface layer by ion implantation”, E. Theodossiu, H. Baumann, and K. BethgeA homogeneous SiC-surface layer is formed by implantation of 40 keV 13C carbon ions into single-crystalline silicon 100" align="middle"> with a fluence of 3.8×1017 ions/cm2 and subsequent electron beam rapid thermal annealing (EB-RTA). The carbon-depth... (Read more)
- 724. J. Appl. Phys. 86, 4348 (1999) , “Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC”, N. T. Son, A. Ellison, B. Magnusson, M. F. MacMillan, W. M. Chen, B. Monemar, and E. JanzénPhotoluminescence (PL) and Zeeman effect measurements in near-infrared luminescence bands in Cr-doped 4H and 6H SiC are presented. The PL spectrum consists of two no-phonon lines (NPLs) at 1.1583 and 1.1898 eV in 4H SiC and three NPLs at 1.1556, 1.1797, and 1.1886 eV in 6H SiC. The observed Zeeman... (Read more)
- 725. J. Appl. Phys. 86, 4176 (1999) , “The influence of boron ion implantation on hydrogen blister formation in n-type silicon”, T. Höchbauer, K. C. Walter, R. B. Schwarz, and M. NastasiWe have studied the formation of surface blisters in 100" align="middle"> n-type silicon following co-implantation with boron and hydrogen. The silicon substrates had four different n-type dopant levels, ranging from 1014 to 1019 cm3. These... (Read more)
- 726. J. Appl. Phys. 86, 3792 (1999) , “Role of oxygen vacancy defect states in the n-type conduction of β-Ga2O3”, Zoltán Hajnal, József Miró, Gábor Kiss, Ferenc Réti, Péter Deák, Roy C. Herndon, and J. Michael KuperbergBased on semiempirical quantum-chemical calculations, the electronic band structure of β-Ga2O3 is presented and the formation and properties of oxygen vacancies are analyzed. The equilibrium geometries and formation energies of neutral and doubly ionized vacancies were... (Read more)
- 727. J. Appl. Phys. 86, 3175 (1999) , “Electronic properties of light-induced recombination centers in boron-doped Czochralski silicon”, Jan Schmidt and Andrés CuevasIn order to study the electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of... (Read more)
- 728. J. Appl. Phys. 86, 3015 (1999) , “The origin of shallow etch pit defects in low dislocation density GaP crystals”, H. Okada, T. Kawanaka, and S. OhmotoThe defect corresponding to shallow etch pits (S-pits) on GaP wafer has been revealed. It is a vacancy-type Frank dislocation loop which surrounds a stacking fault. It is proposed that this loop is formed by the condensation of excess gallium vacancies during cooling of the GaP crystal. The... (Read more)
- 729. J. Appl. Phys. 86, 1848 (1999) , “Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials”, Naoki Fukata and Masashi SuezawaWe determined the formation energy of self-interstitials in carbon (C)-doped Si from measurements of optical absorption due to hydrogen (H) bound to isolated self-interstitials. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, with pressure being 1 atm at high... (Read more)
- 730. J. Appl. Phys. 87, 2655 (2000) , “Recrystallization and electrical properties of MeV P implanted 6H–SiC”, Shinsuke Harada and Teruaki MotookaWe have investigated structural changes and electrical activation processes in 8 MeV P + ion implanted 6HSiC at room temperature (RT) and 850 °C by means of transmission electron microscopy, secondary ion mass spectrometry, and currentvoltage measurements. A buried... (Read more)
- 731. J. Appl. Phys. 87, 2162 (2000) , “Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation”, Aurangzeb Khan and Masafumi YamaguchiWe have investigated the defect structure of 10 MeV proton irradiated Czochralski-grown Si single crystals and space solar cells with boron-doped p-Si base layer using deep level transient spectroscopy measurements to characterize both vacancy interstitials and their complex-type defects and... (Read more)
- 732. J. Appl. Phys. 87, 2149 (2000) , “Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery”, C. Ronning, M. Dalmer, M. Uhrmacher, M. Restle, U. Vetter, L. Ziegeler, and H. HofsässThe recovery of structural defects in gallium nitride (GaN) and aluminum nitride (AlN) after implantation of 111In+ and 89Sr+ in the dose range (0.13) 1013 cm2 and ion energies of 60400 keV has been investigated as a... (Read more)
- 733. J. Appl. Phys. 87, 8201 (2000) , “Shallow buried SiNx layers”, L. Barbadillo, M. J. Hernández, M. Cervera, P. Rodríguez, and J. PiquerasHigh dose nitrogen implantations have been performed at an energy of 30 keV. After high temperature annealing, 1200 °C, a buried layer composed mostly of silicon nitride is formed leaving an overlayer with a high fraction of crystalline silicon. The lattice constant of the overlayer and the... (Read more)
- 734. J. Appl. Phys. 87, 7999 (2000) , “Rate constants for the reaction of H2 with defects at the SiO2/Si(111) interface”, Ligia Gheorghita and Elmer OgryzloA radio frequency probe has been used to monitor changes in charge-carrier recombination centers at a SiO2/Si interface by following the steady-state photogenerated carrier concentration in the silicon. A silicon surface covered with ~200 Å of thermal oxide was exposed to gaseous... (Read more)
- 735. J. Appl. Phys. 87, 7519 (2000) , “Decrease of electron paramagnetic defect density and enhancement of electron field emission in annealed carbon films”, Yun-Hi LeeWe have studied the effect of the paramagnetic defects in carbon films on the field-emission properties. The paramagnetic defects in carbon films originating from the carbon dangling bonds were measured using electron spin resonance (ESR). We found a reduction of the dangling bond density in the... (Read more)
- 736. J. Appl. Phys. 87, 663 (2000) , “Comparison of the annealing characteristics of resistivity and vacancy defects for implant isolated n-type GaAs”, A. P. Knights and S. RuffellGallium arsenide layers, Si-doped at concentrations of 2×1019, 1×1019, and 5×1018 cm3, grown on SI substrates were implanted using multiple-energy regimes, with O+, He+, and H+, respectively, to... (Read more)
- 737. J. Appl. Phys. 87, 4629 (2000) , “Comparative study of divacancy and E-center electronic levels in Si and strained Si0.87Ge0.13 layers”, E. V. Monakhov, A. Yu. Kuznetsov, and B. G. SvenssonThe effect of strain and composition on deep electronic levels in the energy band gap of epitaxial Si0.87Ge0.13 layers grown by chemical vapor deposition has been investigated by deep level transient spectroscopy. Two major levels attributed to a vacancyphosphorus (VP)... (Read more)
- 738. J. Appl. Phys. 87, 4293 (2000) , “Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies”, A. Zerrai, G. Marrakchi, and G. BremondA complete quantitative analysis of electrical and optical properties is carried out on the vanadium transition metal in semi-insulating and n type conductor Cd0.96Zn0.04Te crystals using deep level transient spectroscopy, deep level optical spectroscopy, and... (Read more)
- 739. J. Appl. Phys. 87, 4194 (2000) , “Influence of annealing ambient on oxygen out-diffusion in Czochralski silicon”, Hideyuki YamazakiThe out-diffusion of oxygen in Czochralski grown silicon (100) wafers annealed at high temperature under a hydrogen or an argon ambient has been investigated by secondary ion mass spectrometry (SIMS). The wafers were annealed with three successive process: loading of wafers into furnace at 850... (Read more)
- 740. J. Appl. Phys. 87, 4160 (2000) , “Generation of Frenkel defects in heavily arsenic doped silicon: A first-principles study”, Jianjun Xie and S. P. ChenThe generation of Frenkel defects (a self-interstitial and a vacancy) in heavily As doped Si is investigated theoretically based on first-principles total energy calculations. We find that it is much easier to generate a self-interstitial and a vacancy close to substitutional As atoms than in pure... (Read more)
- 741. J. Appl. Phys. 87, 4119 (2000) , “Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams”, Akira Uedono and Shoichiro TanigawaDepth distributions and species of defects were determined from measurements of Doppler broadening spectra of annihilation radiation and lifetime spectra of positrons for 6H-SiC implanted with 200 keV P + at a dose of 1×1015 cm2. The annealing behavior... (Read more)
- 742. J. Appl. Phys. 87, 3973 (2000) , “Low temperature annealing of 4H–SiC Schottky diode edge terminations formed by 30 keV Ar + implantation”, A. P. Knights, M. A. Lourenço, and K. P. HomewoodEdge termination of Schottky barrier diodes has been achieved using 30 keV Ar + ions implanted at a dose of 1×1015 cm2. The reverse-bias leakage current is reduced by 2 orders of magnitude following postimplant annealing at a temperature of 600 °C.... (Read more)
- 743. J. Appl. Phys. 87, 3696 (2000) , “Effects of donor concentration on transient enhanced diffusion of boron in silicon”, S. SolmiThe effects of substrate donor concentration on transient enhanced diffusion (TED) of boron implanted into silicon wafers predoped with arsenic or phosphorus have been investigated by using secondary ion mass spectroscopy and theoretical simulations. Boron ions have been implanted at low energy... (Read more)
- 744. J. Appl. Phys. 87, 3674 (2000) , “Defects in neutron transmutation doped silicon studied by positron annihilation lifetime measurements”, M. CoeckNeutron transmutation doping of n-type silicon was obtained by irradiating the samples with thermal neutrons in order to create P atoms. Positron lifetime measurements were carried out and the evolution of the induced defects was studied by thermal annealing of the samples. The annealing out... (Read more)
- 745. J. Appl. Phys. 87, 2910 (2000) , “Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon”, L. S. Robertson and K. S. JonesThe evolution of both {311} defects and dislocation loops in the end-of-range (EOR) damage region in silicon amorphized by ion implantation was studied by ex situ transmission electron microscopy (TEM). The amorphization of a (100) n-type Czochralski wafer was achieved with a 20 keV... (Read more)
- 746. J. Appl. Phys. 87, 2885 (2000) , “Reversible variation of donor concentrations in high-purity InP by thermal treatment”, Eishi KubotaThe donor concentration in high-purity InP bulk crystals was found to be reversibly changed by thermal treatment. At a level of 0.52.0×1015 cm3, the concentration decreased below 340 °C and increased above 380 °C. Far-infrared photoconductivity... (Read more)
- 747. J. Appl. Phys. 87, 2064 (2000) , “Room-temperature optical transitions in Mg-doped cubic GaN/GaAs(100) grown by metalorganic chemical vapor deposition”, Dapeng Xu, Hui Yang, D. G. Zhao, S. F. Li, and R. H. WuThe mechanism of room-temperature optical transitions in a Mg-doped cubic GaN epilayer grown on GaAs(100) by metalorganic chemical vapor deposition has been investigated. By examining the dependence of photoluminescence on the excitation intensity (which varied over four orders) at room temperature,... (Read more)
- 748. J. Appl. Phys. 87, 1914 (2000) , “Paramagnetic centers in Al-doped 6H–SiC: Temperature and concentration effects”, Gary J. GerardiThe electron paramagnetic resonance of Al-doped 6HSiC was investigated over a range of temperature and concentration. The resonance signals attributed to Al substituting for Si (AlSi) were found to decrease sharply with temperature between 3.4 and 6.0 K. Impurity-band conduction... (Read more)
- 749. J. Appl. Phys. 87, 1855 (2000) , “Improvement in photoluminescence efficiency of SiO2 films containing Si nanocrystals by P doping: An electron spin resonance study”, Minoru Fujii, Atsushi Mimura, Shinji Hayashi, and Keiichi YamamotoSiO2 and phosphosilicate glass (PSG) films containing Si nanocrystals (nc-Si) as small as a few nanometers were studied by electron spin resonance (ESR) and photoluminescence (PL), and the correlation between the two measurements was examined. It is shown that the incorporation of nc-Si... (Read more)
- 750. J. Appl. Phys. 87, 1681 (2000) , “Annihilation of thermal double donors in silicon”, Yoichi Kamiura, Yoshinori Takeuchi, and Yoshifumi YamashitaWe performed systematic experiments on the annihilation of six species of thermal double donors, or TDDs (TDD1TDD6) under various conditions in both carbon-lean and carbon-rich Si crystals, by means of low-temperature infrared spectroscopy. We found that two kinds of TDD annihilation occurred... (Read more)
- 751. J. Appl. Phys. 87, 1424 (2000) , “Electron paramagnetic resonance study of the Eu2+ ion in a PbWO4 single crystal”, T. H. Yeom, I. G. Kim, and S. H. LeeThe electron paramagnetic resonance of the Eu2+ ion in a PbWO4 single crystal, grown by the Czochralski method, has been investigated using an X-band spectrometer. The rotation patterns in the crystallographic planes together with spin-Hamiltonian parameters of... (Read more)
- 752. J. Appl. Phys. 87, 1187 (2000) , “Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance”, E. San Andrés, A. del Prado, F. L. Martínez, and I. MártilThe effect of rapid thermal annealing processes on the properties of SiO2.0 and SiN1.55 films was studied. The films were deposited at room temperature from N2 and SiH4 gas mixtures, and N2, O2, and SiH4 gas mixtures,... (Read more)
- 753. J. Appl. Phys. 87, 7782 (2000) , “In- and out-diffusion of oxygen during the buried-oxide formation in oxygen-implanted silicon”, Haruhiko Ono and Atsushi OguraFormation mechanism of buried oxide in silicon wafers during the annealing process after oxygen implantation has been investigated by using Fourier-transform infrared absorption spectroscopy and secondary ion mass spectrometry. The implanted Si wafers were annealed at a different temperature, for a... (Read more)
- 754. J. Appl. Phys. 88, 842 (2000) , “Capture cross sections of defect states at the Si/SiO2 interface”, J. Albohn, W. Füssel, N. D. Sinh, K. Kliefoth, and W. FuhsModulation capacitance voltage spectroscopy is applied to study the interaction between interface defect states and the conduction band of thermally oxidized n-type silicon wafers, which were prepared using a broad spectrum of preparation conditions. The modulation frequency response of metal... (Read more)
- 755. J. Appl. Phys. 88, 3082 (2000) , “Study of electron, proton, and swift heavy ion irradiation of n-type germanium using deep level transient spectroscopy”, A. Colder, M. Levalois, and P. MarieTime dependence and temperature annealing effects are studied for different n-type germanium irradiated with swift heavy ions (SHI), protons and electrons. Deep level transient spectroscopy measurements show that the main peak located at about 200 K, previously ascribed to the A-center... (Read more)
- 756. J. Appl. Phys. 88, 205 (2000) , “Nature of the native deep localized defect recombination centers in the chalcopyrite and orthorhombic AgInS2”, J. Krustok, J. Raudoja, and M. KrunksWe studied the deep photoluminescence (PL) emission in polycrystalline chalcopyrite and orthorhombic AgInS2. In both phases several PL bands were detected at 8 K. On the energy scale these deep PL bands are positioned according to a regular pattern. This is explained as being due to... (Read more)
- 757. J. Appl. Phys. 88, 2024 (2000) , “Quasistatic capacitance-voltage characteristics of plane-parallel structures: Metal/semi-insulator/metal”, K. dánskýQuasistatic capacitance-voltage characteristics of plane-parallel structures of the semi-insulating GaAs with two metal contacts are calculated numerically. The model of residual shallow acceptors compensated for by an excess of deep donors is used for the semi-insulating GaAs. Under consideration... (Read more)
- 758. J. Appl. Phys. 88, 1943 (2000) , “Properties of metastable hydrogen-related defects in n-type GaAs studied by isothermal deep-level transient spectroscopy”, Yutaka Tokuda and Kazuhiro KamiyaMetastable hydrogen-related defects (M3/M4) in n-GaAs were studied in detail by using isothermal deep-level transient spectroscopy. In order to clarify the electric-field dependence of the electron-emission process, the double-correlation technique was applied to both M3 and M4 defects. It... (Read more)
- 759. J. Appl. Phys. 88, 1851 (2000) , “Effects of Si-dose on defect-related photoluminescence in Si-implanted SiO2 layers”, H. B. Kim, T. G. Kim, J. H. Son, C. N. Whang, and K. H. ChaeSi ions were implanted into 100-nm-thick SiO2 layer thermally grown on crystalline Si at an energy of 55 keV with various doses ranging from 1×1014 to 1×1017 Si/cm2 at room temperature. Si ions go through the interface between SiO2... (Read more)
- 760. J. Appl. Phys. 88, 1827 (2000) , “Self-diffusion studies of 15N in amorphous Si3BC4.3N2 ceramics with ion implantation and secondary ion mass spectrometry”, H. Schmidt and G. BorchardtNitrogen self-diffusion studies in amorphous precursor-derived Si3BC4.3N2 ceramics were carried out, using ion implanted stable 15N isotopes as tracers and secondary ion mass spectrometry for depth profiling. The analysis of the diffusion profiles in the... (Read more)
- 761. J. Appl. Phys. 88, 1698 (2000) , “Electron paramagnetic resonance studies on microcrystalline silicon prepared by sputtering method”, Takashi EharaDangling bond (DB) defects in unhydrogenated microcrystalline silicon (µc-Si) prepared by rf sputtering have been studied. Raman spectra and x-ray diffraction indicate that the µc-Si fraction has been formed at the Ar sputtering pressure higher than 26.6 Pa... (Read more)
- 762. J. Appl. Phys. 88, 1325 (2000) , “Characterization of defects in (ZnMg)Se compounds by positron annihilation and photoluminescence”, F. Plazaola and K. SaarinenDefect characterization of as-grown Zn1xMgxSe mixed crystals (0x<0.6) and the effect of Zn vapor annealing has been studied by positron lifetime and photoluminescence measurements. We obtain both experimental and theoretical evidence that the bulk... (Read more)
- 763. J. Appl. Phys. 88, 1319 (2000) , “Emission channeling studies of Pr in GaN”, U. Wahl, A. Vantomme, and G. LangoucheWe report on the lattice location of Pr in thin film, single-crystalline hexagonal GaN using the emission channeling technique. The angular distribution of β particles emitted by the radioactive isotope 143Pr was monitored by a position-sensitive electron detector... (Read more)
- 764. J. Appl. Phys. 88, 1312 (2000) , “Transmission electron microscopy characterization of secondary defects created by MeV Si, Ge, and Sn implantation in silicon”, J. Wong-Leung, S. Fatima, and C. JagadishExtended defects created in Si by ion implantation to doses below the amorphization threshold have been studied after annealing at 800 °C for 15 min. The implant species were the group IV elements Si, Ge, and Sn, and structural defects created by similar damage distribution were compared. The... (Read more)
- 765. J. Appl. Phys. 87, 8741 (2000) , “Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable H2 flow rates”, S. V. Nistor and M. StefanThe presence and concentration of nitrogen and hydrogen impurities in thick diamond films grown by microwave plasma chemical vapor deposition at various H2 gas flow rates, keeping a constant [CH4]:[H2] = 2.5% concentration ratio, have been determined by electron spin... (Read more)
- 766. J. Appl. Phys. 87, 8682 (2000) , “Electron paramagnetic resonance of platinum impurities in KTiOPO4 crystals”, N. Y. Garces, K. T. Stevens, and L. E. HalliburtonSingle crystals of KTiOPO4 (KTP) often contain trace amounts of isolated platinum impurities. When present in sufficient concentration, these ions increase the KTP crystal's susceptibility to form gray tracks during frequency doubling of high-power laser beams. Electron paramagnetic... (Read more)
- 767. J. Appl. Phys. 87, 8461 (2000) , “Vacancy effects in transient diffusion of Sb induced by ion implantation of Si + and As + ions”, G. Lulli, M. Bianconi, and S. SolmiThe influence of defects injected by room temperature, high-energy implantation of Si and As ions on the diffusion of Sb marker in Si is investigated. MeV ions induce transient enhanced diffusion (TED) of ion implanted Sb, which increases with increasing the vacancy supersaturation generated in the... (Read more)
- 768. J. Appl. Phys. 87, 8389 (2000) , “Influence of the dopant species on radiation-induced defects in Si single crystals”, Aurangzeb Khan and Masafumi YamaguchiObservations on deep levels introduced in silicon by 1 MeV electron irradiation are reported using boron- or gallium-doped Czochralski (CZ) grown Si space solar cells with different doping concentrations, deep level transient spectroscopy analysis has been carried out to detect the radiation-induced... (Read more)
- 769. J. Appl. Phys. 87, 8368 (2000) , “Defect identification in GaAs grown at low temperatures by positron annihilation”, J. Gebauer, F. Börner, and R. Krause-RehbergWe use positron annihilation to study vacancy defects in GaAs grown at low temperatures (LTGaAs). The vacancies in as-grown LTGaAs can be identified to be Ga monovacancies, VGa, according to their positron lifetime and annihilation momentum distribution. The charge... (Read more)
- 770. J. Appl. Phys. 87, 8361 (2000) , “Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere”, Naoki Fukata and Masashi SuezawaOptical absorption spectra and the annealing behavior of hydrogen (H)-point defect complexes in carbon (C)-doped Si after hydrogenation were investigated. Specimens of C-doped Si (C concentration: 1.7×1017 cm3) were sealed in quartz capsules together with... (Read more)
- 771. J. Appl. Phys. 88, 5127 (2000) , “Effect of deposition temperature on the optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide thin films”, M. Tabbal, S. Isber, and T. C. ChristidisThe optical transmission and paramagnetic centers in pulsed laser deposited amorphous silicon carbide films were investigated as a function of the deposition temperature (Td). As Td is raised from 200 to 650 °C, the optical gap of the films... (Read more)
- 772. J. Appl. Phys. 88, 5017 (2000) , “EL2, EL3, and EL6 defects in GaAs highly implanted with sulfur”, Katsuhiro Yokota, Hideto Kuchii, Kazuhiro Nakamura, and Masanori SakaguchiSulfur ions were implanted into a semi-insulating GaAs wafer at 50 keV at a dose of 1×1015 cm2. The implanted GaAs wafer was annealed at temperatures of 6501000 °C for 15 min. Deep levels were measured in regions with carrier concentrations lower than... (Read more)
- 773. J. Appl. Phys. 88, 4654 (2000) , “Photoluminescence of undoped and neutron-transmutation-doped InSe”, A. A. Homs and B. MaríPhotoluminescence (PL) spectra of undoped and neutron-transmutation-doped InSe samples at 15 K are reported. The undoped InSe PL spectrum clearly shows the free exciton line and an exciton-neutral acceptor complex recombination. A structure of partially resolved transitions is observed between 1.315... (Read more)
- 774. J. Appl. Phys. 88, 4558 (2000) , “A deep level transient spectroscopy study of beryllium implanted n-type 6H-SiC”, X. D. Chen, S. Fung, and C. D. BelingBeryllium implantation induced defects in 6H-SiC pn junctions have been investigated by deep level transient spectroscopy. Five defect centers labeled BE1, BE2, BE3, BE4, and BE5 have been detected in the temperature range 100450 K. A comparative study has also been performed in... (Read more)
- 775. J. Appl. Phys. 88, 4547 (2000) , “Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon”, S. SolmiThe nature of ion-implantation induced clusters of boron and silicon-self interstitials (BICs), and their effects on transient enhanced diffusion (TED) of B in Si have been investigated in samples predoped with B at different concentrations. Excess Si interstitials have been introduced by Si +... (Read more)
- 776. J. Appl. Phys. 88, 4525 (2000) , “Formation and annihilation of H-point defect complexes in quenched Si doped with C”, Naoki Fukata and Masashi SuezawaWe investigated the formation and annihilation of H-point defect complexes formed in C-doped Si by heating at high temperatures followed by quenching in hydrogen gas. Specimens of C-doped Si were sealed in quartz capsules together with hydrogen (H) gas, at pressure 0.81.5 atm at high... (Read more)
- 777. J. Appl. Phys. 88, 4122 (2000) , “Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC”, P. J. Macfarlane and M. E. ZvanutThis work describes the characterization of defect centers in 3CSiC, 4HSiC, and 6HSiC. The different SiC crystal structures are examined with electron paramagnetic resonance after thermal oxidation, and after dry (<1 ppm H2O) N2 or O2 heat... (Read more)
- 778. J. Appl. Phys. 88, 3988 (2000) , “Oxidation induced precipitation in Al implanted epitaxial silicon”, A. La Ferla, G. Galvagno, P. K. Giri, G. Franzò, and E. RiminiThe behavior of Al implanted in silicon has been investigated during thermal oxidation. It has been found that precipitation of Al into AlO-defect complexes depends on the implant energy, i.e., on the distance of the dopant from the surface. It occurs at 650 keV, but it does not at 2.0 MeV or... (Read more)
- 779. J. Appl. Phys. 88, 3941 (2000) , “Effect of radiation-induced defects on silicon solar cells”, S. Zh. KarazhanovRecent experiments indicated an anomalous degradation of n+pp+ silicon space solar cells irradiated with high-energy protons or electrons. Several models have been proposed, which assumes that radiation-induced defects are responsible for the... (Read more)
- 780. J. Appl. Phys. 88, 3795 (2000) , “Mechanisms of transition-metal gettering in silicon”, S. M. MyersThe atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered. ©2000 American Institute of... (Read more)
- 781. J. Appl. Phys. 88, 3402 (2000) , “Trapping processes in CaS:Eu2 + ,Tm3 + ”, Dongdong JiaCaS:Eu2 + ,Tm3 + is a persistent red phosphor. Thermoluminescence was measured under different excitation and thermal treatment conditions. The results reveal that the charge defects, created by substituting Tm3+ for Ca2+, serve as hole traps for the... (Read more)
- 782. J. Appl. Phys. 88, 3260 (2000) , “Radiotracer identification of a Ta-related deep level in 4H–SiC”, J. Grillenberger and N. AchtzigerTo identify tantalum-related deep levels, deep level transient spectroscopy (DLTS) measurements were performed on Ta-implanted n-type 4Hsilicon carbide. The DLTS spectra of samples implanted with stable 181Ta exhibit one dominating peak representing a trap energy of about... (Read more)
- 783. J. Appl. Phys. 88, 3254 (2000) , “Si self-interstitial injection from Sb complex formation in Si”, J. Fage-Pedersen, P. Gaiduk, J. Lundsgaard Hansen, and A. Nylandsted LarsenIt has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation... (Read more)
- 784. J. Appl. Phys. 88, 3249 (2000) , “Magnetic resonance investigations of defects in Ga14N and Ga15N”, M. W. Bayerl, N. M. Reinacher, H. Angerer, O. Ambacher, M. S. Brandt, and M. StutzmannThe influence of the nitrogen nuclear spin on the optically detected magnetic resonance and electron spin resonance signatures of the intrinsic shallow donor and a deep defect causing the characteristic yellow luminescence have been studied on wurtzite GaN epitaxial layers grown by plasma induced... (Read more)
- 785. J. Appl. Phys. 88, 2583 (2000) , “Statistical analysis in the negative-U model of donors in AlxGa1–xAs:Si”, F. Rziga-Ouaja, H. Mejri, A. Triki, and A. SelmiHall measurements were performed on molecular beam epitaxy grown AlxGa1xAs:Si in the temperature range 77300 K. The DX center has been detected through the observation of persistent photoconductivity at low temperature. Two statistics... (Read more)
- 786. J. Appl. Phys. 88, 2309 (2000) , “Photoluminescence, deep level transient spectroscopy and transmission electron microscopy measurements on MeV self-ion implanted and annealed n-type silicon”, D. C. Schmidt and B. G. SvenssonDeep-level transient spectroscopy (DLTS), photoluminescence (PL), and transmission electron microscopy (TEM) measurements have been made on n-type silicon after implanting with 5.6 MeV Si3 + ions using doses of 1091014 cm2 and anneals... (Read more)
- 787. J. Appl. Phys. 88, 2191 (2000) , “Infrared quantum counter studies in europium doped lanthanum trifluoride”, Wenyan Tian, Ranjit S. Pandher, and B. Rami ReddyViolet upconversion signals in the wavelength region 340420 nm were observed from LaF3:Eu3 + under 583 nm dye laser excitation. The intensities of some upconversion signals enhanced ~8× under double resonance excitation by a 583 nm dye laser and a 790.6 nm Ti:... (Read more)
- 788. J. Appl. Phys. 89, 955 (2001) , “Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates”, Patricia J. Macfarlane and M. E. ZvanutWe have used electron paramagnetic resonance to study two intrinsic defects in oxidized epitaxial layers of 3C SiC, a potential substitute for Si in high speed, high power electronics. One center can be described by an isotropic g value of 2.0044. The defect is distinguished by a strong... (Read more)
- 789. J. Appl. Phys. 89, 928 (2001) , “Investigation of two infrared bands at 1032 and 1043 cm–1 in neutron irradiated silicon”, C. A. Londos and L. G. FytrosWe report on infrared (IR) studies of defects in Czochralski-grown silicon (Cz-Si) subjected to fast neutron irradiation and subsequent thermal anneals. We focus mainly on the investigation of the VO4 defect which, in the literature, has been correlated with the pair of bands (1032 and... (Read more)
- 790. J. Appl. Phys. 89, 86 (2001) , “Native donors and compensation in Fe-doped liquid encapsulated Czochralski InP”, Y. W. Zhao, Y. L. Luo, S. Fung, and C. D. BelingUndoped and Fe-doped liquid encapsulated Czochralski (LEC) InP has been studied by Hall effect, currentvoltage (IV), and infrared absorption (IR) spectroscopy. The results indicate that a native hydrogen vacancy complex donor defect exists in as-grown LEC InP. By studying... (Read more)
- 791. J. Appl. Phys. 89, 61 (2001) , “Preferential ion scattering from 6H-SiC: Identification of the substitutional site of the implanted Ga impurities”, M. Satoh, Y. Nakaike, and K. KuriyamaThe substitutional site of the implanted Ga impurity in (100)-oriented 6H-SiC has been investigated using the preferential scattering effect of He ions. The Si and C monoatomic strings are preferentially observed by the angular scans across 100" align="middle"> axial channels parallel to (110)... (Read more)
- 792. J. Appl. Phys. 89, 47 (2001) , “Identification of electron and hole traps in KH2PO4 crystals”, N. Y. Garces, K. T. Stevens, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to characterize a hole trap and several electron traps in single crystals of potassium dihydrogen phosphate (KH2PO4 or KDP). The paramagnetic charge states of these centers are produced by ionizing radiation (e.g., x rays or a... (Read more)
- 793. J. Appl. Phys. 89, 3195 (2001) , “Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment”, S. M. Myers, A. F. Wright, G. A. Petersen, W. R. Wampler, C. H. Seager, M. H. Crawford, and J. HanThe diffusion and release of H and its uptake from the gas phase are modeled for Mg-doped, wurtzite GaN using formation energies and vibration frequencies from the density-function theory. Comparison is made with rates of deuterium release and uptake measured by nuclear-reaction analysis of... (Read more)
- 794. J. Appl. Phys. 89, 3156 (2001) , “Dependence of ion implantation: Induced defects on substrate doping”, Kei Kanemoto, Fuminobu Imaizumi, Tatsufumi Hamada, Yukio Tamai, and Akira NakadaThe characteristics of an ion implantation-induced defect in a silicon substrate are investigated. This defect is considered to be a complex of a point defect and a substrate dopant atom. The experiments are conducted by focusing on the dependence of the substrate dopant species (phosphorus and... (Read more)
- 795. J. Appl. Phys. 89, 1942 (2001) , “Oxidation study of plasma-enhanced chemical vapor deposited and rf sputtered hydrogenated amorphous silicon carbide films”, W. K. Choi, L. P. Lee, S. L. Foo, S. Gangadharan, N. B. Chong, and L. S. TanAn oxidation study of plasma-enhanced chemical vapor deposited (PECVD) and rf sputtered hydrogenated amorphous silicon carbide (a-Si1xCx:H) films was carried out using the infrared (IR) and electron spin resonance (ESR) techniques.... (Read more)
- 796. J. Appl. Phys. 89, 1713 (2001) , “Minority-carrier effects in poly-phenylenevinylene as studied by electrical characterization”, P. Stallinga and H. L. GomesElectrical measurements have been performed on poly[2-methoxy, 5 ethyl (2 hexyloxy) paraphenylenevinylene] in a pn junction with silicon. These included currentvoltage measurements, capacitancevoltage measurements, capacitancetransient spectroscopy, and admittance... (Read more)
- 797. J. Appl. Phys. 89, 165 (2001) , “Thermodynamic analysis of hole trapping in SiO2 films on silicon”, G. Boureau, S. Carniato, and N. CapronA thermodynamic approach based on the existence of a local equilibrium is used to evaluate the temperature dependence of the number of defects responsible for hole trapping (oxygen vacancies transformed into E centers) near the SiSiO2 interface. This approach... (Read more)
- 798. J. Appl. Phys. 89, 1070 (2001) , “Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN”, A. BellPhotoluminescence (PL) spectroscopy has been used to investigate the effect that annealing temperature and ambient has on annealed molecular beam epitaxy grown GaN. Significant differences induced by the different annealing conditions occur in the PL spectra in the 3.424 eV region as well as the... (Read more)
- 799. J. Appl. Phys. 88, 7175 (2000) , “Deep-level impurities in CdTe/CdS thin-film solar cells”, A. Balcioglu, R. K. Ahrenkiel, and F. HasoonWe have studied deep-level impurities in CdTe/CdS thin-film solar cells by capacitancevoltage (CV), deep-level transient spectroscopy (DLTS), and optical DLTS (ODLTS). CdTe devices were grown by close-spaced sublimation. Using DLTS, a dominant electron trap and two hole... (Read more)
- 800. J. Appl. Phys. 88, 6943 (2000) , “Formation of a defect-free denuded zone in GaP substrate by thermal annealing”, Hiroshi Okada, Sei-ichirou Ohmoto, and Takao KawanakaThe vacancy-type Frank dislocation loops in GaP, which are the origin of shallow etch pit defects, dissolve during heat treatment via outdiffusion of the originating point defects. This forms a defect-free denuded zone under the surface of a GaP wafer. The activation enthalpy of the diffusion... (Read more)
Showing
10, 25, 50, 100, 500, 1000, all papers per page.
Sort by:
last publication date,
older publication date,
last update date.
All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
(view as: tree
,
cloud
)
1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)