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- 701. Thin Solid Films 496, 169-173 (2006) , “Green luminescence from Mn ions in ZnO–GeO2 glasses prepared by sol–gel method and their glass ceramics”, Tomoe Sanada, Kazuhiro Yamamoto, Noriyuki Wada , Kazuo KojimaZn2SiO4:Mn2+ is one of the green light luminants used for cathode ray tubes of televisions. Recently, optical materials emitting strong visible light under lower energy excitation have been expected. To obtain new luminants of high quality, we prepared Mn ion doped ZnO–GeO2 glasses and glass... (Read more)
- 702. AIP Conf. Proc. 772, 89 (2005) , “Deep states of Pt, Ir, and Os in Silicon Carbide”, Joachim Grillenberger, Ulrike Grossner, Bengt G. Svensson, Fanny Albrecht, Wolfgang Witthuhn, Rainer SielemannBand gap states of platinum, iridium, and osmium in 4H silicon carbide (SiC) are investigated with Deep Level Transient Spectroscopy (DLTS). A definite chemical assignment of band gap states to Pt, Ir, and Os was achieved by means of the radiotracer principle: the radioactive isotope... (Read more)
- 703. AIP Conf. Proc. 772, 147 (2005) , American Institute of Physics , “Deep levels in osmium doped p-type GaAs grown by metal organic chemical vapor deposition”, M. Zafar Iqbal, A. Majid, A. Dadgar, and D. BimbergResults of a preliminary study on deep level transient spectroscopy (DLTS) investigations of osmium (Os) impurity in p-type GaAs, introduced in situ during MOCVD crystal growth, are reported for the first time. Os is clearly shown to introduce two prominent deep levels in the lower half-bandgap of GaAs at energy positions Ev + 0.42 eV (OsA) and Ev + 0.72 eV (OsB). A minority-carrier emitting defect feature observed in the upper half-bandgap is shown to consist of a band of Os-related deep levels with a concentration significantly higher than that of the majority carrier emitting deep levels. Detailed data on the emission rate signatures and related parameters of the Os-related deep levels are reported. ©2005 American Institute of Physics (Read more)
- 704. AIP Conf. Proc. 772, 143 (2005) , American Institute of Physics , “Deep levels in Ruthenium doped p-type MOCVD GaAs”, A. Majid, M. Zafar Iqbal, A. Dadgar, and D. BimbergRuthenium is introduced into GaAs during epitaxial growth by MOCVD. Preliminary results of DLTS investigation of the defect states associated with this 4d transition-metal impurity are reported for the first time. At least three deep levels are identified with Ru in the lower half-bandgap of GaAs at energy positions Ev + 0.38 eV, Ev + 0.52 eV and Ev + 0.65 eV, the last with a relatively higher concentration than the first two. At least one Ru-related deep level is observed in the upper half-bandgap at Ec – 0.66 eV with a significantly high concentration. Emission rate signatures and associated characteristics of all these defect levels are reported. The Ev + 0.65 eV level is found to exhibit an electric field dependent thermal emission characteristic. ©2005 American Institute of Physics (Read more)
- 705. AIP Conf. Proc. 772, 121 (2005) , “ESR Study of Zn-codoping Effect on the Luminescence Efficiency of the Er-2O Center in GaAs:Er,O”, M. Yoshida, K. Hiraka, H. Ohta, Y. Fujiwara, A. Koizumi, and Y. TakedaESR measurements of Zn-codoped GaAs:Er,O have been performed at 9.49 GHz. Several anisotropic ESR signals (A, B, and C) are observed. We found that the intensity of the C center decreases together with the decrease of the PL intensity by increasing the doping amount of Zn, while the changes of the... (Read more)
- 706. Appl. Phys. Lett. 87, 262108 (2005) , “Fast-forming boron-oxygen-related recombination center in crystalline silicon”, Karsten Bothe and Jan SchmidtThe mechanism of a fast carrier lifetime degradation effect proceeding within seconds in boron-doped Czochralski silicon is investigated. The decrease in the carrier lifetime is attributed to the formation of a deep boron-oxygen-related recombination center with a strongly asymmetric... (Read more)
- 707. Appl. Phys. Lett. 87, 261909 (2005) , “Generation of single color centers by focused nitrogen implantation”, J. Meijer and B. BurchardSingle defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic resonance spectra unambiguously show that the produced defect is the nitrogen-vacancy color center. An... (Read more)
- 708. Appl. Phys. Lett. 87, 261907 (2005) , “Verification of the O–Si–N complex in plasma-enhanced chemical vapor deposition silicon oxynitride films”, S. Naskar, S. D. Wolter, C. A. Bower, B. R. Stoner, J. T. GlassSilicon oxynitride films were deposited using a plasma-enhanced chemical vapor deposition process. The bond configurations of the constituent atoms in the deposited film were analyzed using x-ray photoelectron spectroscopy. Analysis of the Si 2p spectra showed the presence of... (Read more)
- 709. Appl. Phys. Lett. 87, 252118 (2005) , “"EL2" revisited: Observation of metastable and stable energy levels of EL2 in semi-insulating GaAs”, D. Kabiraj, S. GhoshBy using a combination of detailed experimental studies, we identify the metastable and stable energy levels of EL2 in semi-insulating GaAs. These results are discussed in light of the recently proposed models for EL2 in GaAs. ©2005 American Institute of Physics ... (Read more)
- 710. Appl. Phys. Lett. 87, 252113 (2005) , “Electrical activation of the Fe2+/3+ trap in Fe-implanted InP”, B. FraboniWe have studied the electrical activation of the Fe2+/3+ trap in Fe-implanted InP by means of capacitance-voltage and deep level transient spectroscopy analyses. Five deep traps have been identified and we have characterized the concentration and depth distribution of the... (Read more)
- 711. Appl. Phys. Lett. 87, 252102 (2005) , “Photoluminescence study of Sb-doped p-type ZnO films by molecular-beam epitaxy”, F. X. Xiu, Z. Yang, L. J. Mandalapu, D. T. Zhao, and J. L. LiuWe investigated photoluminescence (PL) from reliable and reproducible Sb-doped p-type ZnO films grown on n-Si (100) by molecular-beam epitaxy. Well-resolved PL spectra were obtained from completely dopant-activated samples with hole concentrations above 1.0×1018 ... (Read more)
- 712. Appl. Phys. Lett. 87, 242903 (2005) , “Density of defect states of aluminum nitride grown on silicon and silicon carbide substrates at room temperature”, V. Ligatchev, Rusli, and Zhao PanDensity of defect states of aluminum nitride (AlN) films deposited by rf magnetron sputtering on 100-oriented silicon (Si) and 4H-silicon carbide (4H-SiC) have been investigated using the deep-level-transient-spectroscopy technique. The films were grown at room temperature with varying nitrogen flow... (Read more)
- 713. Appl. Phys. Lett. 87, 242106 (2005) , “Defect-driven inhomogeneities in Ni/4H–SiC Schottky barriers”, S. Tumakha, D. J. Ewing, L. M. Porter, Q. Wahab, X. Ma, T. S. Sudharshan, L. J. BrillsonNanoscale depth-resolved cathodoluminescence spectroscopy (DRCLS) of Ni diode arrays on 4H-SiC epitaxial wafers reveals a striking correspondence between deep level defects and electrical transport measurements on a diode-by-diode basis. Current-voltage measurements display both ideal and nonideal... (Read more)
- 714. Appl. Phys. Lett. 87, 242103 (2005) , “Deep-level transient spectroscopy of TiO2/CuInS2 heterojunctions”, Marian Nanu, Florence Boulch, Joop Schoonman, and Albert GoossensDeep-level transient spectroscopy (DLTS) has been used to measure the concentration and energy position of deep electronic states in CuInS2. Flat TiO2|CuInS2 heterojunctions as well as TiO2-CuInS2 nanocomposites have been investigated.... (Read more)
- 715. Appl. Phys. Lett. 87, 241906 (2005) , “Deep-ultraviolet micro-Raman investigation of surface defects in a 4H–SiC homoepitaxially grown film”, Takuro Tomita, Shigeki Matsuo, Tatsuya Okada, Tsunenobu Kimoto, Hiroyuki Matsunami, Takeshi Mitani, Shin-Ichi NakashimaThe structures of comet defects in a 4HSiC homoepitaxially grown film are investigated by deep-ultraviolet micro-Raman spectroscopy. Spatial distribution of the 4H- and 3CSiC is clearly distinguished both from the intensities of the folded longitudinal acoustic phonon mode and the peak... (Read more)
- 716. Appl. Phys. Lett. 87, 231905 (2005) , “Structure, stability, and diffusion of arsenic-silicon interstitial pairs”, Scott A. Harrison, Thomas F. Edgar, and Gyeong S. HwangRecent experimental studies [A. Ural, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 85, 6440 (1999); R. Kim, T. Hirose, T. Shano, H. Tsuji, and K. Taniguchi, Jpn. J. Appl. Phys. 41, 227 (2002); S. Solmi, M. Ferri, M. Bersani, D. Giubertoni, and V. Soncini, J. Appl. Phys. 94,... (Read more)
- 717. Appl. Phys. Lett. 87, 223111 (2005) , “Time-resolved photoluminescence from ZnO nanostructures”, W. M. Kwok, A. B. Djuriši?, Y. H. Leung, W. K. Chan, D. L. PhillipsDifferent ZnO nanostructures (tetrapods, shells, rods, and highly faceted rods) were characterized by photoluminescence (PL) and time-resolved PL measurements. It was found that different nanostructures exhibit very different optical properties in terms of defect emission and decay times of the... (Read more)
- 718. Appl. Phys. Lett. 87, 222101 (2005) , “Trapping-detrapping defects in single crystal diamond films grown by chemical vapor deposition”, A. Balducci, Marco Marinelli, E. Milani, M. E. Morgada, G. Prestopino, M. Scoccia, A. Tucciarone, and G. Verona-RinatiHigh-quality single-crystal diamond films were homoepitaxially grown by chemical vapor deposition onto low cost high-pressure high-temperature diamond substrates. The transport properties of the obtained samples were studied by photoresponse characterization. Fast ultraviolet (5 ns) laser pulses at... (Read more)
- 719. Appl. Phys. Lett. 87, 221903 (2005) , “Oxygen segregation to dislocations in GaN”, M. E. Hawkridge and D. ChernsThe structure and composition of threading dislocations in GaN grown by hydride vapor phase epitaxy have been examined by electron microscopy. Transmission electron microscopy showed that the core structure of screw dislocations varied widely, alternating irregularly between open core... (Read more)
- 720. Appl. Phys. Lett. 87, 212501 (2005) , “Spin-dependent tunneling through high-k LaAlO3”, V. Garcia, M. Bibes, J.-L. Maurice, E. Jacquet, K. Bouzehouane, J.-P. Contour, A. BarthélémyWe report on the use of the LaAlO3 (LAO) high-k dielectric as a tunnel barrier in magnetic tunnel junctions. From tunnel magnetoresistance (TMR) measurements on epitaxial La2/3Sr1/3MnO3/LAO/La2/3Sr1/3MnO3 junctions,... (Read more)
- 721. Appl. Phys. Lett. 87, 212114 (2005) , “Doping of phosphorus in chemical-vapor-deposited silicon carbide layers: A theoretical study”, T. Hornos, A. Gali, R. P. Devaty, W. J. ChoykeAb initio supercell calculations have been carried out to investigate the doping of phosphorus in chemical-vapor-deposited (CVD) silicon carbide (SiC) layers. We simulated the CVD conditions by using the appropriate chemical potentials for hydrogen and phosphorus (P). We find that the site... (Read more)
- 722. Appl. Phys. Lett. 87, 211912 (2005) , “Deep-level emissions influenced by O and Zn implantations in ZnO”, Q. X. Zhao, P. Klason, M. Willander, H. M. Zhong, W. Lu, J. H. YangA set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1×1017/cm3 and 5×1019/cm3. The samples were thermally treated in an... (Read more)
- 723. Appl. Phys. Lett. 87, 204106 (2005) , “Direct observation of the structure of defect centers involved in the negative bias temperature instability”, J. P. Campbell and P. M. LenahanWe utilize a very sensitive electron paramagnetic resonance technique called spin-dependent recombination to observe and identify defect centers generated by modest negative bias and moderately elevated temperatures in fully processed p-channel metal-oxide-silicon field-effect transistors.... (Read more)
- 724. Appl. Phys. Lett. 87, 193110 (2005) , “Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation”, C. Radtke, H. Enriquez, J. C. Arnault, P. Soukiassian, P. Moras, C. Crotti, P. PerfettiNitric oxide interaction with 3CSiC(100)3×2 and Si-3×2/3CSiC(100)3×2 surfaces is investigated by synchrotron radiation-based core level photoemission spectroscopy. At 25 °C, NO exposures result in oxynitride formation, while annealing at 1000 °C removes oxygen... (Read more)
- 725. Appl. Phys. Lett. 87, 182115 (2005) , “Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy”, Z.-Q. Fang and D. C. LookAlGaN/GaN/SiC Schottky barrier diodes (SBDs), with and without Si3N4 passivation, have been characterized by temperature-dependent current-voltage and capacitance-voltage measurements, and deep level transient spectroscopy (DLTS). A dominant trap A1, with... (Read more)
- 726. Appl. Phys. Lett. 87, 172108 (2005) , “Production of native donors in ZnO by annealing at high temperature in Zn vapor”, L. E. Halliburton, N. C. Giles, N. Y. Garces, Ming Luo, Chunchuan Xu, Lihai Bai, L. A. BoatnerZinc oxide crystals grown by the seeded chemical vapor transport method have been annealed in zinc vapor at 1100 °C for 30 min. These thermochemical reduction treatments produce a deep red coloration in the crystals and increase their n-type electrical conductivity. Electron paramagnetic... (Read more)
- 727. Appl. Phys. Lett. 87, 172103 (2005) , “The antimony-vacancy defect in p-type germanium”, C. E. Lindberg, J. Lundsgaard Hansen, P. Bomholt, A. Mesli, K. Bonde Nielsen, and A. Nylandsted LarsenGe-n+p mesa diodes have been produced in 2-Ω cm single crystals using a molecular-beam epitaxy (MBE) process to grow the Sb-doped epitaxial Ge n+-top layer. The diodes are characterized by a leakage current at room temperature of... (Read more)
- 728. Appl. Phys. Lett. 87, 161906 (2005) , “Vacancy formation in GaAs under different equilibrium conditions”, V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-RehbergDefect properties of undoped semiinsulating and silicon doped n-type GaAs annealed at different arsenic vapor pressures have been studied by means of positron annihilation and Hall effect measurements. In both types of samples, formation of monovacancylike defects during annealing was... (Read more)
- 729. Appl. Phys. Lett. 87, 151909 (2005) , “Far-infrared absorption due to electronic transitions of N–O complexes in Czochralski-grown silicon crystals: Influence of nitrogen and oxygen concentration”, H. Ch. Alt and Y. V. GomeniukFourier-transform infrared absorption measurements have been carried out on nitrogen-doped Czochralski-grown silicon crystals after thermal annealing at 600 °C. The strength of the electronic transitions due to NO related shallow donors shows a square root dependence on the nitrogen... (Read more)
- 730. Appl. Phys. Lett. 87, 122102 (2005) , “Oxygen vacancies in ZnO”, Anderson Janotti and Chris G. Van de WalleThe electronic properties of ZnO have traditionally been explained by invoking intrinsic defects. In particular, the frequently observed unintentional n-type conductivity has often been attributed to oxygen vacancies. We report first-principles calculations showing that the oxygen vacancy... (Read more)
- 731. Appl. Phys. Lett. 87, 091910 (2005) , “Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam”, Z. Q. Chen, M. Maekawa, and A. KawasusoZnO crystals were implanted with N+, O+, and Al+, and co-implanted with O+/N+ and Al+/N+ ions. Positron annihilation measurements indicate introduction of vacancy clusters upon implantation. In the N+-implanted... (Read more)
- 732. Appl. Phys. Lett. 87, 062105 (2005) , “Negative-U property of oxygen vacancy in cubic HfO2”, Y. P. Feng, A. T. L. Lim, M. F. LiOxygen vacancy in cubic HfO2 was investigated using first-principles calculation based on density functional theory and generalized gradient approximation. Five different charge states (V++, V+, V0, V, and... (Read more)
- 733. Appl. Phys. Lett. 87, 051911 (2005) , “The origin of n-type conductivity in undoped In2O3”, Takumi Tomita, Kazuyoshi Yamashita, and Yoshinori HayafujiThis study explores the origin of the native donor in undoped In2O3. The electronic structure of various point defects in In2O3 clusters is studied using the first-principles molecular orbital calculation. The results show that an oxygen vacancy cannot act... (Read more)
- 734. Appl. Phys. Lett. 87, 032107 (2005) , “Interface traps and dangling-bond defects in (100)Ge/HfO2”, V. V. Afanas'ev, Y. G. Fedorenko, and A. StesmansCombined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and (100)Ge/GeO2 interfaces from the seemingly similar interfaces of (100)Si with the... (Read more)
- 735. Appl. Phys. Lett. 87, 022903 (2005) , “Electron spin resonance investigation of oxygen-vacancy-related defects in BaTiO3 thin films”, V. V. Laguta, A. M. Slipenyuk, I. P. Bykov, M. D. Glinchuk, M. Maglione, D. Michau, J. Rosa, L. JastrabikThe Ti3+ center, based on a regular Ti site perturbed by an oxygen vacancy (VO), is identified by electron spin resonance (ESR) in textured BaTiO3 films. The center shows tetragonal symmetry along cubic 100 axes with g-factors: g=1.997,... (Read more)
- 736. Appl. Phys. Lett. 86, 261906 (2005) , “Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation”, Michael R. Hogsed and Yung Kee YeoElectrical properties of defects induced in n-type molecular-beam-epitaxial-grown Al0.14Ga0.86N are studied using deep-level transient spectroscopy (DLTS) to explore the radiation tolerance of AlGaN-based electronic and optoelectronic devices. It has been found that four... (Read more)
- 737. Appl. Phys. Lett. 86, 222110 (2005) , “Magnetic resonance signatures of grown-in defects in GaInNP alloys grown on a GaAs substrate”, I. P. Vorona, T. Mchedlidze, M. Izadifard, I. A. Buyanova, and W. M. ChenDilute-nitride Ga0.44In0.56NyP1y alloys with y=00.02, grown on a GaAs substrate using gas-source molecular beam epitaxy, are studied by the optically detected magnetic resonance (ODMR) technique. Grown-in paramagnetic... (Read more)
- 738. Appl. Phys. Lett. 86, 171102 (2005) , “Optical observation of donor-bound excitons in hydrogen-implanted ZnO”, J.-K. Lee and M. NastasiThe optical and structural properties of H or He implanted ZnO were investigated using low temperature photoluminescence (PL) and infrared spectroscopy (IR). H implantation is shown to influence the relative luminescence intensities of the donor bound excitons, enhancing the 3.361 eV peak, and... (Read more)
- 739. Appl. Phys. Lett. 86, 162109 (2005) , “Electronic transitions at defect states in Cz p-type silicon”, A. Castaldini, D. Cavalcoli, and A. CavalliniPoint and extended defects introduced in p-type Cz Si by oxygen precipitation and plastic deformation have been investigated with electrical and optical methods. Different materials (oxygen precipitated and/or deformed Cz Si and Fz Si) were examined in order to separate the role of oxygen... (Read more)
- 740. Appl. Phys. Lett. 86, 152111 (2005) , “Electrical characterization of Er- and Pr-implanted GaN films”, S. F. Song, W. D. Chen, Chunguang Zhang, Liufang Bian, and C. C. HsuHall, currentvoltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in... (Read more)
- 741. Appl. Phys. Lett. 86, 143507 (2005) , “First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics”, N. Umezawa, K. Shiraishi, T. Ohno, H. Watanabe, T. Chikyow, K. Torii, K. Yamabe, K. Yamada, H. Kitajima, T. ArikadoThe atomistic effects of N atoms on the leakage current through HfO2 high-k gate dielectrics have been studied from first-principles calculations within the framework of a generalized gradient approximation (GGA). It has been found that the intrinsic effects of N atoms drastically... (Read more)
- 742. Appl. Phys. Lett. 86, 142107 (2005) , “Diffusion and dissociation mechanisms of vacancy-oxygen complex in silicon”, Masayuki Furuhashi and Kenji TaniguchiWe are examining diffusion mechanisms of the vacancy-oxygen complex (VO) in bulk Si using ab initio calculations based on a 64-atom supercell. We found two atomic mechanisms involved in the VO diffusion; one is caused by migration of an interstitial oxygen atom, another by migration of a... (Read more)
- 743. Appl. Phys. Lett. 86, 122104 (2005) , “Midgap levels in both n- and p-type 4H–SiC epilayers investigated by deep level transient spectroscopy”, K. Danno, T. Kimoto, and H. MatsunamiMidgap levels in n- and p-type 4HSiC epilayers have been investigated by deep level transient spectroscopy (DLTS). The EH6/7 center (Ec1.55 eV) is the dominant midgap level as observed in DLTS spectra for n-type epilayers. The activation... (Read more)
- 744. Appl. Phys. Lett. 86, 122102 (2005) , “Current transport property of n-GaN/n-6H–SiC heterojunction: Influence of interface states”, Y. Huang, X. D. Chen, S. Fung, C. D. Beling, C. C. Ling, X. Q. Dai, and M. H. XieHeterostructures of n-GaN/n-6HSiC grown by hydride vapor phase epitaxy (HVPE) and molecular-beam epitaxy (MBE) are characterized with the currentvoltage (IV), capacitancevoltage (CV), and deep level transient spectroscopy (DLTS)... (Read more)
- 745. Appl. Phys. Lett. 86, 102108 (2005) , “Activation of shallow boron acceptor in C/B coimplanted silicon carbide: A theoretical study”, A. Gali, T. Hornos, and P. DeákAb initio supercell calculations have been carried out to investigate the complexes of boron acceptors with carbon self-interstitials in cubic silicon carbide. Based on the calculated binding energies, the complex formation of carbon interstitials with shallow boron acceptor and boron... (Read more)
- 746. Appl. Phys. Lett. 86, 101905 (2005) , “Mechanisms of B deactivation contol by F co-implantation”, N.E.B.Cowern and B.Colombeau and J.Benson and A.J.smith and W.Lerch and S.Paul and T.Graf and F.Cristiano and X.Hebras and D.BolzeThermal annealing after preamorphization and solid-phase epitaxy of ultrashallow B implants leads to deactivation and diffusion driven by interstitials released from end-of-range defects. F inhibits these processes by forming small clusters that trap interstitials. A competing BF interaction... (Read more)
- 747. Appl. Phys. Lett. 86, 091903 (2005) , “Observation of recombination enhanced defect annealing in 4H–SiC”, L. Storasta, F. H. C. Carlsson, J. P. Bergman, and E. JanzénWe report observation of recombination enhanced defect annealing in 4HSiC detected by capacitance transient spectroscopy and low temperature photoluminescence (PL). Intrinsic defect centers, created by 160 keV electron irradiation, reduce in concentration after illumination at temperatures... (Read more)
- 748. Appl. Phys. Lett. 86, 081914 (2005) , “Photochromism of vacancy-related defects in thermochemically reduced α-Al2O3:Mg single crystals”, R. Ramírez, M. Tardío, and R. GonzálezOxygen vacancies and their aggregates are produced much more readily in Mg-doped α-Al2O3 than in undoped α-Al2O3 single crystals during thermochemical reduction at high temperatures. A reversible photochromic effect was discovered in Mg-doped... (Read more)
- 749. Appl. Phys. Lett. 86, 061914 (2005) , “Nondestructive characterization of dislocations and micropipes in high-resistivity 6H–SiC wafers by deep-level photoluminescence mapping”, M. Tajima, E. Higashi, T. Hayashi, H. Kinoshita, H. ShiomiWe demonstrated the effectiveness of deep-level photoluminescence (PL) mapping for nondestructive detection of dislocations and micropipes in high-resistivity 6HSiC wafers. PL spectra of the wafers at room temperature were dominated by a broad band with a peak at 1.3 eV, which was traceable... (Read more)
- 750. Appl. Phys. Lett. 86, 052109 (2005) , “Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence”, E. R. Glaser, B. V. Shanabrook, and W. E. CarlosThe conditions and limitations are presented for using low-temperature photoluminescence to estimate the total residual nitrogen concentration in semi-insulating (SI) 4H-SiC substrates where all N shallow donors are compensated in the dark. The ratio of the nitrogen-bound exciton line... (Read more)
- 751. Appl. Phys. Lett. 86, 031915 (2005) , “Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN”, F. Tuomisto and K. SaarinenWe have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga... (Read more)
- 752. Appl. Phys. Lett. 86, 031903 (2005) , “Anomalous behaviors of E1/E2 deep level defects in 6H silicon carbide”, X. D. Chen, C. C. Ling, M. Gong, S. Fung, C. D. Beling, G. Brauer, W. Anwand, W. SkorupaDeep level defects E1/E2 were observed in He-implanted, 0.3 and 1.7 MeV electron-irradiated n-type 6HSiC. Similar to others' results, the behaviors of E1 and E2 (like the peak intensity ratio, the annealing... (Read more)
- 753. Appl. Phys. Lett. 86, 023503 (2005) , “Observation of trapping defects in 4H–silicon carbide metal-oxide-semiconductor field-effect transistors by spin-dependent recombination”, David J. Meyer, Patrick M. Lenahan, Aivars J. LelisWe utilize a highly sensitive electron spin resonance technique called spin-dependent recombination to observe deep level dangling bond centers at and very near the SiC/SiO2 interface in fully processed n-channel 4HSiC lateral metal-oxide-semiconductor field-effect... (Read more)
- 754. Chem. Phys. Lett. 415, 337 (2005) , “No ferromagnetism in Mn doped ZnO semiconductors”, J. Alaria, P. Turek, M. Bernard, M. Bouloudenine, A. Berbadj, N. Brihi, G. Schmerber, S. Colis , A. DiniaPolycrystalline Zn1 − xMnxO was synthesized by co-precipitation method with xvarying between 0.01 and 0.10. Although X-ray diffraction patterns show a typical würtzite structure with no additional peaks for all samples, Raman spectroscopy indicates the appearance of an additional mode in... (Read more)
- 755. J. Appl. Phys. 98, 113524 (2005) , “Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide”, G. Alfieri, E. V. Monakhov, B. G. Svensson, A. HallénUsing deep level transient spectroscopy (DLTS), we have studied the energy position and thermal stability of deep levels in nitrogen doped 4HSiC epitaxial layers after 1.2 MeV proton implantation and 15 MeV electron irradiation. Isochronal annealing was performed at temperatures from 100 to... (Read more)
- 756. J. Appl. Phys. 98, 113506 (2005) , “Swelling of SiC under helium implantation”, S. Leclerc, A. Declémy, M. F. Beaufort, C. Tromas, and J. F. BarbotSingle crystals 4H-SiC were implanted with 50 keV helium ions at temperatures up to 600 °C and fluences in the range 1×10161×1017 cm2. The helium implantation-induced swelling was studied through the measurement of the step height. The... (Read more)
- 757. J. Appl. Phys. 98, 106108 (2005) , “Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition”, Kodigala Subba Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, D. Johnstone, S. Akarca-BiyikliHigh-quality Schottky junctions have been fabricated on n-type 4H SiC epitaxial layers grown by chemical-vapor deposition on C- and Si-face substrates in order to understand the effect of growth direction on the growth mechanism and formation of defects. Atomic force microscopy... (Read more)
- 758. J. Appl. Phys. 98, 093701 (2005) , “Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells”, H. S. Lee and M. YamaguchiPresented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm1, which... (Read more)
- 759. J. Appl. Phys. 98, 093517 (2005) , “Large lattice relaxation deep levels in neutron-irradiated GaN”, S. Li, J. D. Zhang, C. D. Beling, K. Wang, and R. X. WangDeep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at... (Read more)
- 760. J. Appl. Phys. 98, 083709 (2005) , American Institute of Physics , “Osmium impurity-related deep levels in n-type GaAs”, A. Majid, M. Zafar Iqbal, A. Dadgar and D. BimbergThe 5d transition-metal impurity, osmium, has been incorporated during the growth of n-type GaAs epitaxial layers using low-pressure metal-organic chemical-vapor deposition to characterize defect states associated with this heavy and, therefore, thermally stable dopant impurity.... (Read more)
- 761. J. Appl. Phys. 98, 073502 (2005) , “Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy”, Y. W. HeoThe properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements... (Read more)
- 762. J. Appl. Phys. 98, 053707 (2005) , “An asymmetry of conduction mechanisms and charge trapping in thin high-k HfxTiySizO films”, A. Paskaleva, A. J. Bauer, M. LembergerThe electrical behavior of high-permittivity (high-k) hafnium titanium silicate (HfxTiySizO) layers with different Hf:Ti ratios in the films is investigated. The films were deposited by metal-organic chemical-vapor deposition using a... (Read more)
- 763. J. Appl. Phys. 98, 053706 (2005) , “Deep levels by proton and electron irradiation in 4H–SiC”, Antonio Castaldini, Anna Cavallini, Lorenzo Rigutti, Filippo Nava, Sergio Ferrero, Fabrizio GiorgisThe effects on 4H-silicon carbide epilayers of irradiation with protons and electrons having particle energies, respectively, of 6.5 and 8.2 MeV were carefully studied and critically compared. In detail, the electronic levels associated with the irradiation-induced defects were analyzed by... (Read more)
- 764. J. Appl. Phys. 98, 053704 (2005) , “Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon”, A. Armstrong and A. R. ArehartThe impact of C incorporation on the deep level spectrum of n-type and semi-insulating GaN:C:Si films grown by rf plasma-assisted molecular-beam epitaxy (MBE) was investigated by the combination of deep level transient spectroscopy, steady-state photocapacitance, and transient deep level... (Read more)
- 765. J. Appl. Phys. 98, 043709 (2005) , “Carrier compensation near tail region in aluminum- or boron-implanted 4H–SiC (0001)”, Y. Negoro, T. Kimoto, and H. MatsunamiElectrical behavior of implanted Al and B near implant-tail region in 4HSiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by... (Read more)
- 766. J. Appl. Phys. 98, 043518 (2005) , “Annealing behavior between room temperature and 2000 °C of deep level defects in electron-irradiated n-type 4H silicon carbide”, G. Alfieri, E. V. Monakhov, and B. G. SvenssonThe annealing behavior of irradiation-induced defects in 4H-SiC epitaxial layers grown by chemical-vapor deposition has been systematically studied by means of deep level transient spectroscopy (DLTS). The nitrogen-doped epitaxial layers have been irradiated with 15-MeV electrons at room temperature... (Read more)
- 767. J. Appl. Phys. 98, 043508 (2005) , “Deep-level defects in n-type 6H silicon carbide induced by He implantation”, C. C.Ling, X. D. Chen, G. Brauer, W. Anwand, W. Skorupa, H. Y. Wang, H. M. WengDefects in He-implanted n-type 6HSiC samples have been studied with deep-level transient spectroscopy. A deep-level defect was identified by an intensity with a logarithmical dependence on the filling pulse width, which is characteristic of dislocation defects. Combined with information... (Read more)
- 768. J. Appl. Phys. 98, 043507 (2005) , “Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon”, T. MchedlidzeThree electric-dipole spin-resonance signals, labeled TU7, TU8, and TU9, were detected after subjecting oxygen-rich silicon samples to two-step annealing procedures at 450 and 650 °C for prolonged times. The formation and structural evolution of large interstitial agglomerates, known as rodlike... (Read more)
- 769. J. Appl. Phys. 98, 033704 (2005) , “N interstitial and its interaction with substitutional Mg in p-type GaN”, R. R. Wixom and A. F. WrightDensity-functional theory and the generalized gradient approximation were utilized to investigate the local-energy-minimum configurations and formation energies of N interstitials and their interaction with substitutional Mg in p-type GaN. Along with previously proposed configurations of the... (Read more)
- 770. J. Appl. Phys. 98, 023704 (2005) , “Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry”, E. Trajkov and S. PrawerElectrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the... (Read more)
- 771. J. Appl. Phys. 98, 013502 (2005) , “Near-band-edge slow luminescence in nominally undoped bulk ZnO”, T. Monteiro, A. J. Neves, M. C. Carmo, M. J. Soares, M. Peres, and J. WangWe report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite... (Read more)
- 772. J. Appl. Phys. 97, 23909 (2005) , “Electron spin resonance study of Zn-codoping effect on the local structure of the Er-related centers in GaAs:Er,O”, Makoto Yoshida, Kensaku Hiraka, Hitoshi Ohta, Yasufumi Fujiwara, Atsushi Koizumi, Yoshikazu TakedaElectron spin resonance (ESR) measurements of Zn-codoped GaAs:Er,O grown by organometallic vapor phase epitaxy have been performed at 9.49 GHz. Several anisotropic ESR signals (named as A, B, and C) are observed. The angular and temperature dependences of the A, B, and C signals are quite... (Read more)
- 773. J. Appl. Phys. 97, 124507 (2005) , “Electrical behavior of 4H-SiC metal-oxide-semiconductor structures with Al2O3 as gate dielectric”, A. Paskaleva, R. R. Ciechonski, M. Syväjärvi, E. Atanassova, R. YakimovaThe electrical properties of Al2O3 as a gate dielectric in metal-oxide-semiconductor structures based on n- and p-type 4H-SiC grown by sublimation method have been investigated and compared to the properties of similar structures utilizing SiO2. The... (Read more)
- 774. J. Appl. Phys. 97, 123905 (2005) , “Electron paramagnetic resonance of Cr3+ in near-stoichiometric LiTaO3”, M. Loyo-Menoyo and D. J. KeebleElectron-paramagnetic-resonance (EPR) experiments on the dominant Cr3+ center in near-stoichiometric LiTaO3 crystals, grown by the double crucible Czochralski method, are reported. A near complete roadmap of EPR positions was obtained allowing an accurate determination of the... (Read more)
- 775. J. Appl. Phys. 97, 123509 (2005) , “Observation of a spin one native defect in as-grown high-purity semi-insulating 4H SiC”, M. E. Zvanut, Haiyan Wang, Mpumelelo Richards, and V. V. KonovalovElectron paramagnetic resonance measurements of high-purity semi-insulating 4H SiC reveals a spectrum characteristic of an S=1 defect, which appears only after exposure to light with a wavelength less than 690 nm. Analysis of the hyperfine structure of the spectrum suggests that the defect is... (Read more)
- 776. J. Appl. Phys. 97, 123502 (2005) , “Ion irradiation of inhomogeneous Schottky barriers on silicon carbide”, F. Roccaforte, S. Libertino, F. Giannazzo, C. Bongiorno, F. La Via, and V. RaineriIn this paper, the effects of ion irradiation on Schottky barriers formed on silicon carbide are discussed. After Si-ion irradiation at the near-interface region in Ti/4H-SiC contacts an increase of the Schottky barrier height from 1.05 to 1.21 eV was observed, accompanied by a lowering of the... (Read more)
- 777. J. Appl. Phys. 97, 093517 (2005) , “Interaction of defects and H in proton-irradiated GaN(Mg, H)”, S. M. Myers and C. H. SeagerMagnesium-doped, p-type GaN containing H was irradiated with MeV protons at room temperature and then annealed at a succession of increasing temperatures, with the behavior of defects and H in the material being followed through infrared absorption spectroscopy, nuclear-reaction analysis of... (Read more)
- 778. J. Appl. Phys. 97, 084913 (2005) , “Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition”, H. J. Chung, A. Y. Polyakov, S. W. Huh, S. Nigam, and M. SkowronskiHigh-purity 6H-SiC single crystals were grown by the halide chemical-vapor deposition process. Growth was performed in a vertical hot-wall reactor with a separate injection of a silicon precursor (silicon tetrachloride) and a carbon precursor (propane). Typical growth rates were between 100 and 300 ... (Read more)
- 779. J. Appl. Phys. 97, 083529 (2005) , “A method to determine deep level profiles in highly compensated, wide band gap semiconductors”, A. Armstrong, A. R. Arehart, and S. A. RingelA lighted capacitancevoltage (LCV) method for spatially profiling defect levels in wide band gap, highly compensated materials is presented. Combined with deep level optical spectroscopy, the optical nature of the LCV profiling technique enables the quantitative study of lower bounds of... (Read more)
- 780. J. Appl. Phys. 97, 063511 (2005) , “Positron beam studies of argon-irradiated polycrystal α-Zr”, Chunlan ZhouDoppler broadening spectroscopy was performed using a variable-energy positron beam to investigate the effect of defects induced by 150-keV Ar-ion-irradiated α-Zr bulk material. S parameter in the damaged layer of the as-irradiated sample induced by ion irradiation increased with the... (Read more)
- 781. J. Appl. Phys. 97, 056101 (2005) , “Triplet recombination at Pb centers and its implications for capture cross sections”, Felice Friedrich, Christoph Boehme, and Klaus LipsPulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Si) (111) to silicon dioxide (SiO2) interface can cause recombination of strongly coupled spin pairs in singlet and triplet... (Read more)
- 782. J. Appl. Phys. 97, 053704 (2005) , “The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies”, J. L. Gavartin, A. L. Shluger, A. S. Foster, G. I. BersukerUsing ab initio density-functional total energy and molecular-dynamics simulations, we study the effects of various forms of nitrogen postdeposition anneal (PDA) on the electric properties of hafnia in the context of its application as a gate dielectric in field-effect transistors. We... (Read more)
- 783. J. Appl. Phys. 97, 043504 (2005) , “Photoluminescence of mechanically polished ZnO”, D. W. Hamby, D. A. Lucca, and M. J. KlopfsteinThe effects of mechanical polishing on the photoluminescence (PL) from each polar face of wurtzite-structure ZnO are presented. Differences observed for the 4.2 K PL of a mechanically polished surface when compared to that of a chemomechanically polished surface include broadened bound-exciton... (Read more)
- 784. J. Appl. Phys. 97, 034302 (2005) , “Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps”, Eckhard Pippel, Jörg Woltersdorf, Halldor Ö. Ólafsson, Einar Ö. SveinbjörnssonWe report on electrical and microscopic investigations aimed to clarify the origin of near-interface traps (NITs) in metalsilicon dioxide4H-silicon carbide structures. Using capacitancevoltage and thermal dielectric relaxation current (TDRC) analysis we investigated NITs close to... (Read more)
- 785. J. Appl. Phys. 97, 033702 (2005) , “Recombination-induced athermal migration of hydrogen and deuterium in SiC”, Yaroslav Koshka and Bharat KrishnanThe phenomenon of recombination-induced formation of hydrogen-defect complexes in epitaxial silicon carbide (SiC) was further investigated on p-type samples treated in deuterium plasma. Qualitatively similar effects were observed for hydrogen and deuterium. The formation of hydrogen-related... (Read more)
- 786. J. Appl. Phys. 97, 033513 (2005) , “Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC”, J. Slotte, K. Saarinen, M. S. Janson, A. Hallén, A. Yu. Kuznetsov, B. G. Svensson, J. Wong-Leung, C. JagadishVacancy-type defect production in Al- and Si-implanted 4HSiC has been studied as a function of ion fluence, ion flux, and implantation temperature in the projected ion range region by positron annihilation spectroscopy and Rutherford backscattering techniques. Ion channeling measurements show... (Read more)
- 787. J. Appl. Phys. 97, 023505 (2005) , “Nickel solubility in intrinsic and doped silicon”, A. A. Istratov and P. ZhangSolubility of nickel in intrinsic, moderately, and heavily doped n-type and p-type silicon was determined using instrumental neutron activation analysis. The solubility data for intrinsic silicon were found to be in good agreement with the literature data. In heavily doped... (Read more)
- 788. J. Appl. Phys. 97, 013540 (2005) , “Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H–SiC Schottky diodes”, Y. Wang, G. N. Ali, M. K. Mikhov, V. Vaidyanathan, B. J. Skromme, B. Raghothamachar, M. DudleyDefects in SiC degrade the electrical properties and yield of devices made from this material. This article examines morphological defects in 4HSiC and defects visible in electron beam-induced current (EBIC) images and their effects on the electrical characteristics of Schottky diodes. Optical... (Read more)
- 789. J. Appl. Phys. 97, 013533 (2005) , “Observation of dislocations in diffused 4H–SiC p-i-n diodes by electron-beam induced current”, S. Maximenko, S. Soloviev, D. Cherednichenko, and T. SudarshanThe electron-beam induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon-carbide-diffused p-n diodes. It was observed that EBIC contrast depends on the type of defect (superscrew, screw, and edge dislocation). This dependence was... (Read more)
- 790. J. Appl. Phys. 97, 013528 (2005) , “Production and recovery of defects in phosphorus-implanted ZnO”, Z. Q. Chen, A. Kawasuso, Y. Xu, and H. NaramotoPhosphorus ions were implanted in ZnO single crystals with energies of 50380 keV having total doses of 4.2×10134.2×1015 cm2. Positron annihilation measurements reveal the introduction of vacancy clusters after implantation. These... (Read more)
- 791. J. Chem. Phys. 122, 094508 (2005) , “Application of the Wolf damped Coulomb method to simulations of SiC”, Y. Ma and S. H. GarofaliniA multibody interatomic potential is developed for bulk SiC using a modification of the Wolf et al. summation technique [D. Wolf, P. Keblinski, S. R. Phillpot, and J. Eggebrecht, J. Chem. Phys. 110, 8254 (1999)] for the electrostatic interaction. The technique is modified to account for the... (Read more)
- 792. J. Magn. Magn. Mater. 302, 118 (2005) , “Magnetism origin of Mn-doped ZnO nanoclusters”, J.H. Li, D.Z. Shen, J.Y. Zhang, D.X. Zhao, B.S. Li, Y.M. Lu, Y.C. Liu , X.W. FanZnMnO nanoclusters were synthesized by the sol–gel method. The structural and magnetic characters were investigated. The XRD spectrum shows ZnMnO nanoclusters are hexagonal wurtzite structures and a small quantity of ZnMn2O4 phase is also present in the spectrum. The percentages of Zn and Mn... (Read more)
- 793. J. Phys.: Condens. Matter 17, S3179 (2005) , IOP Publishing , “Phase transitions in PbSe under actions of fast neutron bombardment and pressure”, S.V. Ovsyannikov, V.V. Shchennikov, A.E. Kar’kin, B.N. GoshchitskiiIn this paper, the influences of fast neutron bombardment, high pressure and chemical substitution on the electronic properties of PbSe single crystals are studied. For the first time in p-PbSe an electronic transition has been established of 'metal–semiconductor' type accompanied by an... (Read more)
- 794. J. Quant. Spectrosc. Radiat. Transfer 90, 97-113 (2005) , “Spectroscopic investigations on ZnF2–MO–TeO2 (MO=ZnO, CdO and PbO) glasses doped with chromium ions”, C. Laxmi Kanth, B. V. Raghavaiah, B. Appa Rao , N. VeeraiahDifferential scanning calorimetric studies, spectroscopic studies (viz., optical absorption, ESR, infrared spectra) and thermoluminescence studies of ZnF2–MO–TeO2 (MO=ZnO, CdO and PbO) glasses doped with different concentrations of chromium ions have been investigated. Results have... (Read more)
- 795. J. Vac. Sci. Technol. B 23, 594 (2005) , “Electronic defect states at annealed metal/4H–SiC interfaces”, S. Tumakha, S. H. Goss, L. J. Brillson, R. S. OkojieWe have used low energy electron-excited nanoscale luminescence spectroscopy (LEEN) to study the formation of electronic surface states at metal/4HSiC contacts. These junctions were formed using both low and high reactivity metals to study how the nature of interface chemical bonding affects... (Read more)
- 796. JETP Lett. 82, 441 (2005) , “EPR Identification of the Triplet Ground State and Photoinduced Population Inversion for a Si-C Divacancy in Silicon Carbide”, P. G. Baranov, I. V. Il’in, E. N. Mokhov, M V. Muzafarova, S. B. Orlinskii, J. Schmidt
- 797. Mater. Sci. Eng. B 124-125, 192 (2005) , “Effect of fluorine on boron thermal diffusion in the presence of point defects”, M.N.Kham and H.A.W.El Mubared and J.M.Bonar and P.AshuburnWith the increased interest in the use of fluorine co-implantation with boron for boron diffusion suppression in MOSFET devices, it is important to understand the mechanisms by which fluorine reduces boron diffusion. Mechanisms, such as B–F chemical reaction, vacancy–fluorine clusters and fluorine–interstitials interactions have been proposed in the literature. In this paper, a point defect injection is done to investigate the mechanism responsible for boron TED and thermal diffusion suppression in F+ and B+ implanted silicon. A 5 keV, 7 × 1012 cm-2 B+ implant into silicon is used which is typical for halo implants in n-MOS. Three F+ energies, 5, 50 and 185 keV, are used. It is followed by rapid thermal annealing at 900–1000 °C for different times in N2 for an inert anneal and O2 for injection of interstitial point defects from the surface. Fluorine profiles for samples implanted with 185 keV F+ and annealed in N2 show two fluorine peaks at ~Rpand~Rp/2. Under interstitial injection, the Rp/2 peak decreases in size and for long anneal times is completely eliminated, supporting an earlier claim that the Rp/2 peak is due to vacancy–fluorine clusters. The amount of suppression of both boron TED and thermal diffusion at 900 and 1000 °C anneal is correlated to the amount of fluorine remaining after anneal. (Read more)
- 798. Mater. Sci. Eng. C 25, 614-617 (2005) , “Incorporation of cobalt into ZnO nanoclusters”, Igor Ozerov, Françoise Chabre and Wladimir MarineThe structural, optical and magnetic properties of nanostructured ZnO films co-doped with cobalt and aluminium have been studied. The nanocrystalline films, with cluster sizes in range 50–100 nm, were deposited by pulsed laser ablation in a mixed atmosphere of oxygen and helium. The... (Read more)
- 799. Microelectron. Reliability 45, 71 (2005) , “A comprehensive model of PMOS NBTI degradation ”,Negative bias temperature instability has become an important reliability concern for ultra-scaled Silicon IC technology with significant implications for both analog and digital circuit design. In this paper, we construct a comprehensive model for NBTI phenomena within the framework of the standard reaction–diffusion model. We demonstrate how to solve the reaction–diffusion equations in a way that emphasizes the physical aspects of the degradation process and allows easy generalization of the existing work. We also augment this basic reaction–diffusion model by including the temperature and field-dependence of the NBTI phenomena so that reliability projections can be made under arbitrary circuit operating conditions. (Read more)
- 800. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
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