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- 601. J. Appl. Phys. 84, 1889 (1998) , “Study of DX center in Cd0.8Zn0.2Te:Cl by positron annihilation”, S. Fung, Y. Y. Shan, A. H. Deng, C. C. Ling, and C. D. BelingVariable energy positron beam and positron annihilation lifetime experiments have been carried out to study the DX center in Cd0.8Zn0.2Te:Cl at 50 K. A short positron effective diffusion length of 275 ± 25 Å and a large intensity of 79.0%±0.3% for... (Read more)
- 602. J. Appl. Phys. 84, 1426 (1998) , “Electrical properties of extremely low doped GaSb Schottky diodes”, Whitney Mason and J. R. WatermanThis article presents capacitancevoltage (C/V), currentvoltage (J/V), and deep level spectroscopy (DLTS) measurements on Al/GaSb Schottky diodes; the GaSb was doped n type using a Ga2Te3 source. We found a net doping density of... (Read more)
- 603. J. Appl. Phys. 84, 1354 (1998) , “Electrically active point defects in n-type 4H–SiC”, J. P. Doyle, M. K. Linnarsson, P. Pellegrino, N. Keskitalo, and B. G. SvenssonAn electrically active defect has been observed at a level position of ~ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ~ 5 × 1014 cm2 in epitaxial layers of 4HSiC grown by vapor phase epitaxy... (Read more)
- 604. J. Appl. Phys. 84, 1274 (1998) , “Electrical and optical characterization of ion-implanted CuGaSe2 single crystals”, J. H. SchönCuGaSe2 single crystals were doped with B and Ge by ion implantation and analyzed by Hall effect, photoluminescence, and reflected second harmonic generation measurements. After ion implantation the crystals exhibited a destroyed surface structure. Measurements of the band edge... (Read more)
- 605. J. Appl. Phys. 84, 1246 (1998) , “Local vibrational mode bands due to a DX-like hydrogen-related center in silicon”, V. P. Markevich and M. SuezawaAn absorption line at 1025.5 cm 1 has been observed in hydrogenated Czochralski-grown silicon crystals after irradiation with fast electrons and following annealing in the temperature range of 300400 °C. The line was found to be related to a local vibrational mode (LVM)... (Read more)
- 606. J. Appl. Phys. 84, 1152 (1998) , “Aluminum-implantation-induced deep levels in n-type 6H–SiC”, S. Fung, M. Gong, and C. D. BelingDeep-level defect centers on the n-side of p+n junction diodes formed by low and elevated temperature aluminum-ion implantation into n-type 6HSiC have been studied using deep-level transient spectroscopy. Two shallow Al-acceptor levels have been observed... (Read more)
- 607. J. Appl. Phys. 83, 7909 (1998) , “Photoluminescence and transport studies of boron in 4H SiC”, S. G. Sridhara, L. L. Clemen, R. P. Devaty, and W. J. ChoykeTwo distinct boron-related centers are known in silicon carbide polytypes, one shallow (ionization energy ~ 300 meV) and the other deep (~ 650 meV). In this work, 4H SiC homoepitaxial films are intentionally doped with the shallow boron center by controlling the silicon to carbon source gas ratio... (Read more)
- 608. J. Appl. Phys. 83, 7678 (1998) , “Degradation of commercial high-brightness GaP:N green light emitting diodes”, K. dánský, J. Zavadil, and D. NohavicaDeep level transient spectra, electroluminescence spectra, and light output versus current were measured on diodes degraded by a current stress. It has been shown that the drop in electroluminescence efficiency can be related to a new deep level formed by recombination enhanced reaction from the... (Read more)
- 609. J. Appl. Phys. 83, 7542 (1998) , “Characterization of phosphorus doped n-type 6H-silicon carbide epitaxial layers produced by nuclear transmutation doping”, Hans Heissenstein, Christian Peppermueller, and Reinhard HelbigAluminum doped 6H-SiC epitaxial layers (p-type net doping: NA ND = 5.2 × 1015 cm 3, thickness 3 µm) on a p+ doped 6H-SiC substrate... (Read more)
- 610. J. Appl. Phys. 83, 6106 (1998) , “Quantitative analysis of the concentration of interstitial O2 molecules in SiO2 glass using luminescence and Raman spectrometry”, L. Skuja, B. Güttler, and D. SchielThe Raman band of the stretching vibration of interstitial oxygen molecules in glassy SiO2 is found at 1548.5 ± 1 cm 1. By comparison with the Raman spectrum of gaseous O2 (Q band at 1555.5 cm 1), the concentration of the... (Read more)
- 611. J. Appl. Phys. 83, 5942 (1998) , “Magnetic relaxation in Sm2Fe14Ga3 and Sm2Fe14Ga3C”, N. Mommer, M. Gerlach, J. van Lier, and H. KronmüllerMagnetic after-effect measurements of Sm2Fe14Ga3 and the carbide Sm2Fe14Ga3C were performed in the temperature range of 140 to 450 K. In the case of Sm2Fe14Ga3C, the relaxation spectrum is composed of... (Read more)
- 612. J. Appl. Phys. 84, 3561 (1998) , “Thermal donor formation and annihilation at temperatures above 500 °C in Czochralski-grown Si”, W. GötzThermal donors (TDs) are generated in Czochralski (CZ)-grown silicon by heat treatments around 450 °C. They form several individual effective-mass-like donors with slightly different ionization energies and act as double donors (TDx0,TDx+). Heat treatments at... (Read more)
- 613. J. Appl. Phys. 84, 3333 (1998) , “Changes in the photoelectrical properties and generation of photoinduced defects under light/air exposure of C60 thin films”, E. A. Katz and D. FaimanWe report on the time development of surface photovoltage (SPV) and electron paramagnetic resonance (EPR) spectra for C60 films irradiated by room light in air. Such exposure is shown to result in the progressive reduction of the SPV signal at 0.91.1 eV and in an increase in the... (Read more)
- 614. J. Appl. Phys. 84, 3175 (1998) , “Effects of oxygen-related defects on the leakage current of silicon p/n junctions”, Yoshio Murakami, Yuhki Satoh, Hisashi Furuya, and Takayuki ShingyoujiThe reverse-bias leakage characteristics of silicon pn junctions have been investigated with particular attention to the effects of various types of oxygen-related defects, such as oxygen precipitates, oxidation induced stacking fault, and grown-in defects. The effects of oxygen-related... (Read more)
- 615. J. Appl. Phys. 84, 3125 (1998) , “Hydrogenation and annealing effects in p-type ZnSe thin films grown on GaAs (100) substrates”, M. D. Kim and H. S. ParkPhotoluminescence (PL) and Raman scattering measurements have been carried out to investigate the hydrogenation and annealing effects in p-type ZnSe epilayers grown on n-type GaAs (100) substrates by molecular beam epitaxy. After hydrogenation, the PL spectra showed that the deep... (Read more)
- 616. J. Appl. Phys. 84, 3113 (1998) , “Diffusivity of oxygen in Czochralski silicon at 400–750 °C”, Hiroshi Takeno, Yoshinori Hayamizu, and Katsuhiko MikiDiffusivity of oxygen in Czochralski silicon crystal in the temperature range of 400750 °C has been determined from macroscopic oxygen precipitation behavior. The oxygen diffusivities at several nucleation temperatures from 400 to 750 °C were deduced from precipitated oxygen... (Read more)
- 617. J. Appl. Phys. 84, 3078 (1998) , “Mechanism of iron gettering in MeV Si ion implanted epitaxial silicon”, Sergei V. KoveshnikovThe gettering properties of the two damage regions, namely, a near-surface vacancy-rich region, Rp/2 and a buried layer of extended defects near the MeV Si ion projected range, Rp, have been quantitatively determined by means of secondary ion mass... (Read more)
- 618. J. Appl. Phys. 84, 3073 (1998) , “Electrical characterization of silicon carbide n+pp+ diodes with an N-implanted n+ emitter”, C. RaynaudSilicon carbide bipolar diodes fabricated by nitrogen implantation with a subsequent annealing at 1100 °C and passivated with a deposited oxide have been characterized. Capacitance and currentvoltage measurements have been made to analyze the quality of the junction. Admittance... (Read more)
- 619. J. Appl. Phys. 84, 2732 (1998) , “Passivation properties of the local oxidation of silicon–oxide/Si interface defects”, Shinji FujiedaThe passivation properties of the local oxidation of silicon (LOCOS) oxide/Si interface defects were investigated by reverse current measurement and capacitance transient spectroscopy of pn junction diodes that had a large LOCOS-defined perimeter. The LOCOS/Si interface defects had... (Read more)
- 620. J. Appl. Phys. 84, 2565 (1998) , “Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si”, P. N. K. Deenapanray and F. D. AuretDeep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that... (Read more)
- 621. J. Appl. Phys. 84, 2497 (1998) , “Fine structure of DX(Sn) centers in AlxGa1 – xAs”, H. H. Zhan, J. Y. Kang, Z. Y. Wu, and Q. S. HuangHigh resolution Laplace defect spectroscopy was used to study the fine structure of the electron emission process of DX(Sn) centers in AlxGa1 xAs (x = 0.26,0.53). Two groups of peaks in the spectra of electron emission rates were found to... (Read more)
- 622. J. Appl. Phys. 84, 2466 (1998) , “New infrared absorption bands related to interstitial oxygen in silicon”, T. HallbergIn addition to the well-known spectrum of Czochralski-grown silicon, two infrared bands at 560 and 648 cm1 are found to arise from the interstitial oxygen in silicon. The assignment of the bands is performed using the studies of their oxygen isotope shift and temperature dependence.... (Read more)
- 623. J. Appl. Phys. 84, 2459 (1998) , “Impurity gettering to secondary defects created by MeV ion implantation in silicon”, R. A. Brown, O. Kononchuk, and G. A. RozgonyiImpurities in MeV-implanted and annealed silicon may be trapped at interstitial defects near the projected ion range, Rp, and also at vacancy-related defects at approximately Rp/2. We have investigated the temperature dependence of impurity trapping... (Read more)
- 624. Appl. Phys. Lett. 92, 132104 (2008) , “Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory”, Y. J. Seo, K. C. Kim, and T. G. KimThe origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n-type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are... (Read more)
- 625. Appl. Phys. Lett. 92, 132102 (2008) , “On the identity of a crucial defect contributing to leakage current in silicon particle detectors”, J. H. Bleka, L. Murin, E. V. Monakhov, B. S. Avset, and B. G. SvenssonThe annealing kinetics of the so-called E4/E5 center or E4a/E4b center in electron-irradiated Si particle detectors has been studied at four different temperatures from 23 to 65 °C using deep-level transient spectroscopy (DLTS). The center gives rise to two energy levels at 0.37 and 0.45 eV... (Read more)
- 626. J. Appl. Phys. 102, 103514 (2007) , AIP , “Characterization of defects in ZnO nanocrystals: Photoluminescence and positron annihilation spectroscopic studies”, A. K. Mishra, S. K. Chaudhuri, S. Mukherjee, A. Priyam, A. Saha, and D. DasDefects present in ZnO nanocrystals prepared by a wet chemical method have been characterized by photoluminescence (PL) and positron annihilation spectroscopy (PAS) techniques. The as-prepared sample was heat treated at different temperatures to obtain nanocrystals in the size range of 19–39 ... (Read more)
- 627. J. Appl. Phys. 85, 94 (1999) , “Comparison of Cu gettering to H + and He + implantation-induced cavities in separation-by-implantation-of-oxygen wafers”, Miao Zhang, Chenglu Lin, and Xinzhong DuoWell-defined bands of cavities have been formed beneath the buried oxide (BOX) layer of two sets of separation-by-implantation-of-oxygen (SIMOX) wafers by H + and He + implantation. The gettering of Cu impurities, which were implanted into the top Si layer at different doses... (Read more)
- 628. J. Appl. Phys. 85, 633 (1999) , “Deep trap in InGaAs grown by gas source molecular beam epitaxy”, Yoshifumi TakanashiThe deep-level transient spectroscopy (DLTS) measurement method is used to investigate the deep traps in In0.53Ga0.47As grown by gas source molecular beam epitaxy. An electron trap with activation energy of 0.28 eV is detected and a capture cross section is estimated to be 8.03... (Read more)
- 629. J. Appl. Phys. 85, 439 (1999) , “Photoluminescence study of deep levels in Cr-doped ZnSe”, S. Bhaskar, P. S. Dobal, B. K. Rai, and R. S. KatiyarSingle crystals of intrinsic ZnSe were grown by the seeded physical vapor transport method and the diffusion doping was utilized to incorporate Cr in these crystals. The radiative recombinations in these samples with Cr concentration in the range 1.010.2 × 1019 cm ... (Read more)
- 630. J. Appl. Phys. 85, 174 (1999) , “Trapping of Si interstitials in boron doping background: Boron clustering and the "+1" model”, M. B. Huang and I. V. MitchellBoron transient enhanced diffusion (TED) in Si predoped with boron isotope atoms has been studied using secondary ion mass spectroscopy and channeling nuclear reaction analysis. Si crystal was first implanted with 11B ions of various doses and subsequently annealed at 1100 °C for 2 h... (Read more)
- 631. J. Appl. Phys. 85, 168 (1999) , “Optical and electron paramagnetic resonance study of light-emitting Si + ion implanted silicon dioxide layers”, M. Ya. Valakh, V. A. Yukhimchuk, V. Ya. Bratus', and A. A. KonchitsThermally grown SiO2 on Si substrates implanted with Si + ions with a dose of 6 × 1016 cm 2 were studied by the techniques of photoluminescence, electron paramagnetic resonance (EPR), and low-frequency Raman scattering. Distinct... (Read more)
- 632. J. Appl. Phys. 85, 1234 (1999) , “Carrier trapping in iron-doped GaInP”, A. snaTime-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1 × 1018 cm 3. The electron capture cross section for... (Read more)
- 633. J. Appl. Phys. 85, 105 (1999) , “Gallium implantation induced deep levels in n-type 6H–SIC”, M. Gong, S. Fung, and C. D. BelingTwo Ga-acceptor levels, located at EV + 0.31 eV and EV + 0.37 eV, respectively, have been observed in the gallium implantation manufactured p+n diodes using deep level transient spectroscopy. The behavior of the implanted... (Read more)
- 634. J. Appl. Phys. 84, 6753 (1998) , “Spin-dependent Auger effect on shallow donors in the CdF2:Mn2 + luminescence”, A. Kamiska and A. SuchockiIt is shown that the Auger effect on shallow donors in the luminescence of manganese ions in semiconducting CdF2:Mn, Y crystals is suppressed by a magnetic field. The Auger effect, which is a spin-dependent energy transfer from the manganese ions to the electrons occupying shallow donors,... (Read more)
- 635. J. Appl. Phys. 84, 6689 (1998) , “Modified compensation model of CdTe”, M. Fiederle, C. Eiche, M. Salk, R. Schwarz, and K. W. BenzThe traditional compensation model to explain the high resistivity properties of CdTe is based on the presence of a deep acceptor level of the cadmium vacancy in the middle of the band gap. A new compensation model based on a deep intrinsic donor level is presented. The compensation model is used... (Read more)
- 636. J. Appl. Phys. 84, 6351 (1998) , “Influence of defects on electron emission from diamond films”, Yoshiyuki Show, Fumihiko Matsuoka, Masaharu Hayashi, and Hirokazu ItoThe correlation between paramagnetic defects and the electron emission in diamond films, which were deposited by the chemical vapor deposition method, has been studied using electron-spin-resonance (ESR) and field-emission measurements. The paramagnetic defects, which are a carbon dangling bond in... (Read more)
- 637. J. Appl. Phys. 84, 6105 (1998) , “Deep level transient spectroscopy of synthetic type IIb diamond”, R. Zeisel, C. E. Nebel, and M. StutzmannDeep level transient spectroscopy (DLTS) and optically excited DLTS are applied to investigate the defect distribution in IIb synthetic diamond. Two defects at 0.83 and 1.25 eV above the valence band edge are detected. Capacitancevoltage measurements reveal a boron doping density of 7 ×... (Read more)
- 638. J. Appl. Phys. 84, 5828 (1998) , “Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers”, L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. Siegle, and C. ThomsenThe compensation of Mg-doped GaN is systematically studied by low-temperature photoluminescence and Raman spectroscopy using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurements. The compensation mechanism is... (Read more)
- 639. J. Appl. Phys. 84, 5826 (1998) , “Relationship between deep-level centers and stoichiometry in semi-insulating gallium arsenide”, Lanying Lin, NuoFu Chen, Xingru Zhong, Hongjia He, and Chengji LiExperimental results have shown the fact that the deep-level centers in semi-insulating GaAs decrease with the improvement in stoichiometry. The electrical resistivity doubles when the concentration of EL2 centers decreases to a half. The microgravity-growth experiments also show that improved... (Read more)
- 640. J. Appl. Phys. 84, 5647 (1998) , “Nonvolatile memory effects in nitrogen doped tetrahedral amorphous carbon thin films”, E. G. Gerstner and D. R. McKenzieElectrical measurements of nitrogen doped tetrahedral amorphous carbon (ta-C:N) thin films have revealed a reversible nonvolatile memory effect, related to the excitation and de-excitation of electrons between deep acceptor states and shallow donor states within the mobility gap. This... (Read more)
- 641. J. Appl. Phys. 84, 5554 (1998) , “Properties of the titanium related level in Cd0.96Zn0.04Te crystals”, A. Zerrai and G. BremondSemi-insulating and n-type conductor titanium (Ti) doped CdZnTe has been investigated by deep level transient spectroscopy, deep level optical spectroscopy and photoinduced current transient spectroscopy. A main electron trap at 0.82 eV is detected and its electrical and optical... (Read more)
- 642. J. Appl. Phys. 84, 5502 (1998) , “Effect of iron on oxygen precipitation in nitrogen-doped Czochralski silicon”, Xiwen Zhang, Deren Yang, Ruixin Fan, Jinxin Zhang, and Duanlin QueThe effect of iron on oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon was investigated by Fourier transform infrared spectroscopy at room temperature or at liquid helium temperature. The experiments revealed that the oxygen precipitation could be enhanced by the contamination of... (Read more)
- 643. J. Appl. Phys. 84, 5345 (1998) , “A study of deep centers in Zn1 – xMgxSe crystals using deep-level transient spectroscopy”, R. Beyer and H. BurghardtDefects in Zn1 xMgxSe have been studied using deep-level transient spectroscopy. The crystalline material with low Mg concentration (x = 0.09, 0.15), obtained by the high-pressure Bridgman method, has a sphalerite structure and shows n-type... (Read more)
- 644. J. Appl. Phys. 84, 5210 (1998) , “Characterization of Si + ion-implanted SiO2 films and silica glasses”, Soumyendu GuhaWe report here electron spin resonance (ESR), Raman scattering, photoluminescence (PL), and absorption studies of Si + ions implanted into silica glasses and thermally grown SiO2 films on Si wafers. The aim is to understand the defect formation and luminescence mechanism as... (Read more)
- 645. J. Appl. Phys. 84, 4781 (1998) , “Simulation of clustering and transient enhanced diffusion of boron in silicon”, Masashi UematsuWe have simulated the postimplantation clustering and transient enhanced diffusion (TED) in boron profiles with peak concentrations below the boron (B) solubility limit. First, we derive an analytical formula for B clustering in terms of the reaction between B atoms and supersaturated... (Read more)
- 646. J. Appl. Phys. 84, 4749 (1998) , “Electrical signatures and thermal stability of interstitial clusters in ion implanted Si”, J. L. Benton, K. Halliburton, S. Libertino, and D. J. EagleshamDeep level transient spectroscopy (DLTS) investigations have been used to characterize the electrical properties of interstitial clusters in ion-implanted Si. Both n- and p-type samples were implanted with 145 keV1.2 MeV Si ions to doses of 1 × 10105... (Read more)
- 647. J. Appl. Phys. 84, 4590 (1998) , “Photoluminescence spectroscopy of Mg-doped GaN”, J. K. Sheu and Y. K. SuWe have grown Mg-doped GaN films by metalorganic chemical vapor deposition with various CP2Mg flow rates. After 750 °C postgrowth annealing, p-type GaN films with carrier concentrations and mobilities about 2 × 1017/cm3 and 10 cm2/V s,... (Read more)
- 648. J. Appl. Phys. 84, 4537 (1998) , “Ga2 + hole centers and photostimulated luminescence in the x-ray storage phosphor RbBr:Ga + ”, U. Rogulis, S. Schweizer, S. Assmann, and J.-M. SpaethIt was previously shown that RbBr doped with Ga + is an efficient x-ray storage phosphor with a figure of merit comparable to that of the commercially used BaFBr:Eu2 + . The paramagnetic hole centers generated upon x-irradiation involved in the storage and read-out process... (Read more)
- 649. J. Appl. Phys. 84, 4448 (1998) , “Positron beam studies of argon irradiated CdS thin films”, G. AmarendraDepth profiling studies of defects in CdS thin films using a low energy positron beam are reported. CdS films of 1 µm thickness on a glass substrate have been grown using the chemical bath deposition method and irradiated with 140 keV Ar ions to doses of 5 × 1014 and 5... (Read more)
- 650. J. Appl. Phys. 84, 4414 (1998) , “Electron spin resonance study of aquated hexachloro-rhodate complexes in AgCl microcrystals”, H. Vercammen, T. Ceulemans, and D. SchoemakerThe electron and hole trapping and detrapping properties of three types of rhodium centers were determined by electron spin resonance in Rh3 + -doped AgCl microcrystals. Three paramagnetic Rh2 + centers were identified after ultraviolet irradiation: RhCl64 - "... (Read more)
- 651. J. Appl. Phys. 84, 4273 (1998) , “16 MeV-electron-induced defects in iron-doped indium phosphide”, M. Kamta and C. SchwabDiverse experimental approaches such as microwave saturation, photoexcitation, and phototransients, in combination with powerful multiparameter data analysis, have enabled us to unravel several intertwinning spectra of paramagnetic defects in 16 MeV-electron-irradiated semi-insulating InP:Fe, aimed... (Read more)
- 652. J. Appl. Phys. 84, 4255 (1998) , “Gap states caused by oxygen precipitation in Czochralski silicon crystals”, M. Koizuka and H. Yamada-KanetaDeep level transient spectroscopy measurements have been made on both n- and p-type silicon crystals containing various types of the oxygen precipitates to investigate the associated gap states. A new signal in the gap-state density was observed at about Ec... (Read more)
- 653. J. Appl. Phys. 84, 4214 (1998) , “Proximity gettering of platinum in proton irradiated silicon”, D. C. Schmidt, B. G. Svensson, and N. KeskitaloEpitaxial silicon samples of n type have been implanted with 850 keV protons at doses of 5.8 × 1011 to 5 × 1013 H + cm 2. Subsequent indiffusion of platinum at 700 °C for 30 min resulted in the presence of a single deep... (Read more)
- 654. J. Appl. Phys. 86, 364 (1999) , “Origin of the deep center photoluminescence in CuGaSe2 and CuInS2 crystals”, J. KrustokPhotoluminescence (PL) of CuGaSe2 and CuInS2 single crystals, either as grown or Cu annealed, reveals a broad and clear deep emission band at hEg 0.6 eV. In both of these as-grown materials this band has a similar doublet structure with... (Read more)
- 655. J. Appl. Phys. 85, 8292 (1999) , “SiC/SiO2 interface-state generation by electron injection”, V. V. Afanas'ev and A. StesmansGeneration of interface states caused by electron injection in n- and p-type (3C, 4H, 6H)SiC/SiO2/metal structures was studied using photoinjection methods. The charge trapping in the oxides on SiC was found to be similar to the charging of thermal oxides on Si.... (Read more)
- 656. J. Appl. Phys. 85, 8074 (1999) , “Shoulder at the 887 cm – 1 infrared band in neutron irradiated Si”, C. A. Londos, N. V. Sarlis, and L. G. FytrosInfrared spectroscopy was used to study the 887 cm1 band in neutron irradiated Czochralski-grown silicon arising in the spectra upon annealing of the 830 cm1 band of the VO defect. Our analysis showed the presence of a 884 cm1 shoulder in the region... (Read more)
- 657. J. Appl. Phys. 85, 8054 (1999) , “Ultrashallow thermal donor formation in silicon by annealing in ambient oxygen”, D. Åberg, M. K. Linnarsson, and B. G. SvenssonCzochralski-grown silicon wafers doped with phosphorus (~ 1014 cm 3) have been annealed in nitrogen, wet nitrogen, oxygen, argon, and vacuum ambients at 470 °C for times up to 500 h. Sample characterization was made using predominantly electrical techniques such as... (Read more)
- 658. J. Appl. Phys. 85, 7978 (1999) , “Electrical characterization of a He ion implantation-induced deep level existing in p+n InP junctions”, L. Quintanilla, R. Pinacho, L. Enríquez, R. Peláez, S. Dueñas, E. Castán, L. Bailón, and J. BarbollaThe electrical characterization of a He ion implantation-induced deep level existing in fully implanted p+n InP junctions isolated by He bombardment has been carried out in this work. A discrete deep level located at 0.19 eV below the conduction band was detected by deep... (Read more)
- 659. J. Appl. Phys. 85, 7972 (1999) , “Photoluminescence properties of MgxCd1 – xSe mixed single crystals”, Chang-Dae Kim, Dong-Ho Shin, Hyang-Hee Jang, and Hae-Mun JeongThe photoluminescence spectra of MgxCd1 xSe (0.00x0.46) mixed single crystals grown by the chemical transport reaction technique were investigated. We observed an emission band (I2) due to excitons bound to a neutral donor, an... (Read more)
- 660. J. Appl. Phys. 85, 7759 (1999) , “ZnSe/GaAs band-alignment determination by deep level transient spectroscopy and photocurrent measurements”, A. Souifi, R. Adhiri, R. Le Dantec, and G. GuillotUsing deep level transient spectroscopy and photocurrent measurements we have investigated Schottky contacts formed on p-isotype Zn(SSe)/GaAs heterostructures grown by molecular beam epitaxy on p-GaAs(100) substrates. A deep level located at 0.6 eV above the ZnSe valence band is... (Read more)
- 661. J. Appl. Phys. 85, 7604 (1999) , “Electron-irradiation-induced deep levels in n-type 6H–SiC”, M. Gong, S. Fung, and C. D. BelingThe fluence-dependent properties and the annealing behavior of electron-irradiation-induced deep levels in n-type 6HSiC have been studied using deep-level transient spectroscopy (DLTS). Sample annealing reveals that the dominant DLTS signal at EC 0.36 eV... (Read more)
- 662. J. Appl. Phys. 85, 7597 (1999) , “Boron segregation to extended defects induced by self-ion implantation into silicon”, Jianxin Xia, Tomoya Saito, Ryangsu Kim, Takenori Aoki, Yoshinari Kamakura, and Kenji TaniguchiThe evolution of boron segregation to extended defects during thermal annealing was studied with secondary ion mass spectrometry and cross-sectional transmission electron microscopy. Czochralski Si wafers with a boron concentration of 3 × 1017 cm 3 were implanted... (Read more)
- 663. J. Appl. Phys. 85, 7120 (1999) , “A deep level transient spectroscopy study of electron irradiation induced deep levels in p-type 6H–SiC”, M. Gong, S. Fung, and C. D. Beling1.7 MeV electron irradiation-induced deep levels in p-type 6HSiC have been studied using deep level transient spectroscopy. Two deep hole traps are observed, which are located at EV+0.55 eV and EV+0.78 eV. They have been identified as... (Read more)
- 664. J. Appl. Phys. 85, 6926 (1999) , “Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs”, K. Kuriyama, T. Koyama, and K. KushidaNuclear reaction analysis (NRA), using the 12C(d,p)13C reaction, in conjunction with Rutherford backscattering spectrometry (RBS) in the channeling geometry was used to evaluate the substitutional fraction of C in (100)-oriented semi-insulating GaAs implanted with... (Read more)
- 665. J. Appl. Phys. 85, 6751 (1999) , “Light-induced charge transport processes in photorefractive Ba0.77Ca0.23TiO3 doped with iron”, A. Mazur, C. Veber, O. F. Schirmer, C. Kuper, and H. HessePhotorefractive barium-calcium titanate crystals with the congruently melting composition (Ba0.77Ca0.23TiO3) doped with iron are annealed in a hydrogen atmosphere at various temperatures. The samples are studied with electron paramagnetic resonance (EPR) and optical... (Read more)
- 666. J. Appl. Phys. 85, 6746 (1999) , “Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride”, Kwang Soo Seol, Tsuyoshi Futami, Takashi Watanabe, and Yoshimichi OhkiWhen amorphous silicon nitride films are irradiated by a KrF excimer laser, they exhibit broad photoluminescence (PL) centered around 2.4 eV. The PL intensity gradually decreases and the PL peak energy shifts to a lower energy with an increase of the implanted dose of Ar + ions. This... (Read more)
- 667. J. Appl. Phys. 85, 3661 (1999) , “Formation of modified Si/SiO2 interfaces with intrinsic low defect concentrations”, L. G. Gosset, J. J. Ganem, H. J. von Bardeleben, S. Rigo, I. Trimaille, J. L. Cantin, T. Åkermark, and I. C. VickridgeThe modification by postoxidation NO treatments of the Si/SiO2 interface in thermally grown Si(100)/SiO2 layers has been studied by nuclear reaction analysis and electron paramagnetic resonance spectroscopy. Our results demonstrate a selective incorporation of NO molecules at... (Read more)
- 668. J. Appl. Phys. 85, 3556 (1999) , “2 MeV electron irradiation of silicon at elevated temperatures: Influence on platinum diffusion and creation of electrically active defects”, D. C. Schmidt and B. G. SvenssonPlatinum has been diffused at 300800 °C for 30 min into n-type epitaxial silicon samples during 2 MeV electron irradiation using a dose of 1 × 1017 e cm 2. Thereafter the samples were characterized by capacitancevoltage... (Read more)
- 669. J. Appl. Phys. 85, 3499 (1999) , “Redshift of the longitudinal optical phonon in neutron irradiated GaP”, K. Kuriyama and Y. MiyamotoRedshift of the longitudinal optical (LO) phonon relating to the defect structure in neutron-irradiated GaP has been studied using Raman scattering, electron paramagnetic resonance, x-ray diffraction, and Fourier-transform infrared absorption methods. The defect structure is discussed for the two... (Read more)
- 670. J. Appl. Phys. 85, 3198 (1999) , “Donor-acceptor pair recombination in AgIn5S8 single crystals”, N. M. GasanlyPhotoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.441.91 eV energy region and in the 10170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm ... (Read more)
- 671. J. Appl. Phys. 85, 3139 (1999) , “Thermally stimulated-current observation of hole traps in undoped semi-insulating GaAs and their photoquenching behavior”, Maki Suemitsu and Yoshitomo SagaeDetailed thermally stimulated-current measurements have been conducted on an undoped, semi-insulating GaAs crystal under 1.06 µm illumination at 15 K. By combining with Hall voltage measurements, we confirmed the presence of hole traps that show similar activation energies with the one... (Read more)
- 672. J. Appl. Phys. 85, 3114 (1999) , “Removal of end-of-range defects in Ge + -pre-amorphized Si by carbon ion implantation”, Peng-Shiu Chen and T. E. HsiehCarbon ion implantation was employed to annihilate the end-of-range (EOR) defects in Ge + -pre-amorphized Si. Experimental results showed that the efficiency of EOR defect removal depends on the Ge + -pre-amorphization conditions, the location of projected range... (Read more)
- 673. J. Appl. Phys. 85, 2568 (1999) , “Infrared and transmission electron microscopy studies of ion-implanted H in GaN”, C. H. Seager, S. M. Myers, G. A. Petersen, J. Han, and T. HeadleyH and D have been implanted into undoped films of GaN heteroepitaxially grown on sapphire over a dose range from 5 × 1015 to 5 × 1017 ions/cm2. After a 600 °C post-implantation anneal, room temperature Fourier-transform-infrared spectroscopy reveals... (Read more)
- 674. J. Appl. Phys. 85, 2562 (1999) , “Hydrogen interaction with implantation induced point defects in p-type silicon”, S. Fatima and C. JagadishInteraction of hydrogen with implantation induced point defects in p-type Si has been monitored using deep level transient spectroscopy. H ions are implanted into p-Si using low doses in the range from 109 to 1010 cm 2. Vacancy and interstitial... (Read more)
- 675. J. Appl. Phys. 85, 2390 (1999) , “He-implantation induced defects in Si studied by slow positron annihilation spectroscopy”, R. S. Brusa, G. P. Karwasz, N. Tiengo, and A. ZeccaOpen volume defect profiles have been obtained by performing Doppler broadening measurements with a slow positron beam on p-type Si samples implanted near liquid nitrogen temperature with He ions at 20 keV and at 5 × 1015 and 2 × 1016 cm 2... (Read more)
- 676. J. Appl. Phys. 85, 2175 (1999) , “Identification of the nature of platinum related midgap state in silicon by deep level transient spectroscopy”, K. S. R. K. RaoIn this article, we present the detailed investigations on platinum related midgap state corresponding to Ec 0.52 eV probed by deep level transient spectroscopy. By irradiating the platinum doped samples with high-energy (1.1 MeV) gamma rays, we observed that the... (Read more)
- 677. J. Appl. Phys. 85, 2093 (1999) , “The electrical properties of terbium ions in crystalline Si”, Sebania Libertino and Salvatore CoffaWe have investigated the electrical properties of terbium ions incorporated in crystalline Si. Silicon p+-n junctions were realized in n-type epitaxial or Czochralski-grown Si, having an O concentration of ~ 1015 and 7 ×... (Read more)
- 678. J. Appl. Phys. 85, 2001 (1999) , “Theoretical evidence for the semi-insulating character of AlN”, Antonella Fara, Fabio Bernardini, and Vincenzo FiorentiniWe present ab initio density-functional calculations for acceptors, donors, and native defects in aluminum nitride, showing that acceptors are deeper (Be ~ 0.25 eV, Mg ~ 0.45 eV) and less soluble than in GaN; at further variance with GaN, both the extrinsic donors SiAl and... (Read more)
- 679. J. Appl. Phys. 85, 1825 (1999) , “Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium”, J. G. Cederberg, T. D. Culp, and B. BiegWe have investigated the use of an alternative erbium precursor, tris(3,5-di-tert-butyl- pyrazolato)bis(4-tert-butylpyridine)erbium, to dope erbium into GaAs. The incorporated erbium forms an optically active center identified as Er2O. The GaAs:Er formed using this precursor... (Read more)
- 680. J. Appl. Phys. 85, 1582 (1999) , “Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy”, A. Cavallini and B. FraboniWe have carried out deep level transient spectroscopy (DLTS), optical DLTS, and capacitancevoltage measurements on liquid phase epitaxy-grown Er-doped Si to characterize the deep levels present in the material and to identify those related to dislocations and involved in the luminescence... (Read more)
- 681. J. Appl. Phys. 85, 1423 (1999) , “Postgrowth thermal treatment of CuIn(Ga)Se2: Characterization of doping levels in In-rich thin films”, I. Dirnstorfer, D. M. Hofmann, D. Meister, and B. K. MeyerOptical and electrical measurements were carried out on annealed CuIn(Ga)Se2 (CIGS) thin films with Ga content of 10%. Annealing of as-grown In-rich CIGS in air/oxygen at 400 °C changes the photoluminescence spectrum to a spectrum which is usually obtained from as-grown Cu-rich CIGS.... (Read more)
- 682. J. Appl. Phys. 85, 1401 (1999) , “Helium-implanted silicon: A study of bubble precursors”, F. Corni, G. Calzolari, S. Frabboni, C. Nobili, G. Ottaviani, and R. ToniniThe interaction of helium atoms with the radiation damage imparted to (100) silicon single crystal by He+ implantation at 5 × 1015 cm2, 20 keV, and liquidnitrogen temperature is investigated by means of various complementary techniques during and... (Read more)
- 683. J. Appl. Phys. 85, 1216 (1999) , “Analysis of conduction mechanisms in annealed n-Si1 – xCx:H/p-crystalline Si heterojunction diodes for different doping concentrations”, L. F. Marsal, J. Pallares, and X. CorreigWe fabricated and characterized annealed n-type amorphous Si1 xCx on p-type crystalline silicon heterojunction diodes with three different base doping concentrations: NA ~ 1016, 1018, and... (Read more)
- 684. J. Appl. Phys. 85, 1105 (1999) , “Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs”, R. L. Maltez, Z. Liliental-Weber, and J. WashburnCharacteristic 1.54 µm Er3 + emission has been observed from Er-implanted and annealed, low-temperature grown GaAs Be doped and undoped samples. Er plateau implantations (480, 155, and 40 keV successive implants) were performed at 300 °C covering calculated Er... (Read more)
- 685. J. Appl. Phys. 85, 1063 (1999) , “Role of silicon impurities in the trapping of holes in KTiOPO4 crystals”, K. T. Stevens, S. D. Setzler, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to characterize a new hole trap in flux-grown KTiOPO4 crystals. This center is formed at room temperature when the crystals are exposed to either 60 kV x rays or a pulsed 355 nm laser beam. Principal g values measured at room temperature... (Read more)
- 686. J. Appl. Phys. 86, 981 (1999) , “Effects of annealing on the electrical properties of Fe-doped InP”, Y. W. Zhao, S. Fung, and C. D. BelingFe-doped liquid encapsulated Czochralski InP has been annealed between 500 and 900 °C for different durations. The electrical property of annealed InP has been studied by temperature-dependent Hall measurement. Defects in annealed Fe-doped InP have been detected by room-temperature transient... (Read more)
- 687. J. Appl. Phys. 86, 951 (1999) , “Compensation defects in annealed undoped liquid encapsulated Czochralski InP”, S. Fung, Y. W. Zhao, X. L. Xu, and X. D. ChenAs-grown undoped n-type semiconducting and annealed undoped semi-insulating (SI) liquid encapsulated Czochralski (LEC) InP has been studied by temperature dependent Hall measurement, photoluminescence spectroscopy, infrared absorption, and photocurrent spectroscopy. P-type conduction... (Read more)
- 688. J. Appl. Phys. 86, 764 (1999) , “Photoluminescence study of the defects induced by neutron irradiation and rapid annealing in semi-insulating GaAs”, Jian LiuThe rapid annealing behavior of several kinds of defects in semi-insulating GaAs irradiated with various neutron fluences has been characterized using a photoluminescence technique. In this experiment, transmutation impurities form not only donors, but also acceptors, GeAs (the 1.4783 eV... (Read more)
- 689. J. Appl. Phys. 86, 752 (1999) , “Ion-implantation in bulk semi-insulating 4H–SiC”, Mulpuri V. Rao and Jesse B. TuckerMultiple energy N (at 500 °C) and Al (at 800 °C) ion implantations were performed into bulk semi-insulating 4HSiC at various doses to obtain uniform implant concentrations in the range 1 × 10181 × 1020 cm 3 to a depth of 1.0... (Read more)
- 690. J. Appl. Phys. 86, 281 (1999) , “Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy”, V. A. Joshkin, C. A. Parker, S. M. Bedair, J. F. Muth, I. K. Shmagin, and R. M. KolbasWe report on the investigation of the effect of growth temperature on point defect density of unintentionally doped GaN grown by atmospheric pressure metalorganic chemical vapor deposition and hydride vapor phase epitaxy. A correlation between photoluminescence (PL) spectra and the concentration of... (Read more)
- 691. J. Appl. Phys. 86, 217 (1999) , “Deep level analysis of radiation-induced defects in Si crystals and solar cells”, Masafumi Yamaguchi, Aurangzeb Khan, and Stephen J. TaylorDeep level transient spectroscopy (DLTS) analysis of radiation-induced defects in p-type Si crystals and solar cells has been carried out to clarify the mechanism of the anomalous degradation of Si n+pp+ structure space cells induced by... (Read more)
- 692. J. Appl. Phys. 86, 214 (1999) , “Migration energy for the silicon self-interstitial”, Anders Hallén, Niclas Keskitalo, Lalita Josyula, and Bengt G. SvenssonThe generation of vacancy-related point defects in low dose 1.3 MeV proton irradiated high purity silicon has been investigated. The dose rate was varied to give a total dose of 5 × 109 cm 2 at irradiation temperatures from 70 to 295 K. The inverse dose rate... (Read more)
- 693. J. Appl. Phys. 86, 190 (1999) , “Characterization of vacancies in as-grown and electron irradiated α-quartz by means of positron annihilation”, S. Dannefaer, T. Bretagnon, and D. CraigenSynthetic α-quartz is shown to contain a significant concentration (several ppm) of vacancies. The major concentration of vacancies is suggested to be in the form of divacancies, giving rise to a positron lifetime of 285 ± 5 ps, but in addition, there is a much smaller concentration of... (Read more)
- 694. J. Appl. Phys. 86, 1762 (1999) , “A near-infrared photoluminescence study of GaAs nanocrystals in SiO2 films formed by sequential ion implantation”, Yoshihiko Kanemitsu, Hiroshi Tanaka, and Takashi KushidaWe have studied photoluminescence (PL) properties of Ga + and As + implanted SiO2 films on Si substrate. After thermal annealing, zinc blende GaAs nanocrystals are formed in SiO2 films and several PL bands appear in the red and near-infrared spectral... (Read more)
- 695. J. Appl. Phys. 86, 1542 (1999) , “Oxidation-induced traps near SiO2/SiGe interface”, C. G. Ahn, H. S. Kang, Y. K. Kwon, S. M. Lee, B. R. Ryum, and B. K. KangUsing an Al/SiO2(wet)/Si0.9Ge0.1/nSi/Al capacitor structure, effects of oxidation on bulk trap and interface states near the SiO2/SiGe interface are investigated. Two peaks at the energy levels of 0.23 eV (D1) and 0.40 eV (D2)... (Read more)
- 696. J. Appl. Phys. 86, 1439 (1999) , “Compensation introduced by defect complexes in p-type ZnSe”, Tian-Ling RenDefect complexes in N-doped and As-doped ZnSe are studied by using the discrete-variational local-density-functional method within a cluster model. Based on the difference of formation energy between two complexes, it is found that the NSeZnVSe complex is a more... (Read more)
- 697. J. Appl. Phys. 86, 1433 (1999) , “Deep hole traps in Be-doped Al0.5Ga0.5As layers grown by molecular beam epitaxy”, J. Szatkowski, E. Paczek-Popko, and K. SieraskiDeep hole traps in p-type Al0.5Ga0.5As grown by molecular beam epitaxy have been studied by the deep-level transient-spectroscopy method applied to samples with a Schottky diode configuration. Five hole traps, labeled as H0 to H4, were found. For traps H1, H3, and H4 the... (Read more)
- 698. J. Appl. Phys. 86, 1393 (1999) , “Interactions of intentionally diffused hydrogen with nitrogen acceptors and nitrogen related donor centers in molecular beam epitaxy grown ZnSe”, H. Pelletier, B. Theys, and A. LussonNitrogen doped ZnSe layers grown by molecular beam epitaxy have been exposed to a hydrogen or deuterium plasma. Deuterium diffusion profiles have been measured by secondary ion mass spectroscopy. The main feature of these profiles is the presence of a plateau on which the H concentration closely... (Read more)
- 699. J. Appl. Phys. 86, 2352 (1999) , “Ion channeling study of the lattice disorder in neutron irradiated GaP”, K. Kuriyama, Y. Miyamoto, T. Koyama, and O. OgawaThe lattice disorder in GaP produced by fast neutrons with a fluence of 2.1 × 1018 cm 2 has been investigated with 1.5 MeV 4He + channeling. The slight increase in the 111" align="middle"> aligned yield for irradiated crystals indicates that... (Read more)
- 700. J. Appl. Phys. 86, 2042 (1999) , “X-ray induced luminescence of high-purity, amorphous silicon dioxide”, A. J. Miller, R. G. Leisure, and Wm. R. AustinA comprehensive study of x-ray stimulated luminescence has been carried out on four types of high-purity, amorphous silica (a-SiO2). Both high OH and low OH as well as oxygen-excess and oxygen-deficient materials were studied. The room-temperature, visible x-radio luminescence... (Read more)
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