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- 601. Appl. Phys. Lett. 53, 2546 (1988) , “Effect of local alloy disorder on emission kinetics of deep donors (DX centers) in AlxGa1–xAs of low Al content”, P. M. Mooney, T. N. Theis, and S. L. WrightWe report measurements by deep level transient spectroscopy of electron emission from the deep donor level (DX center) in Si-doped GaAs and AlxGa1xAs of very low Al content. For the first time, discrete emission rates corresponding to different... (Read more)
- 602. Appl. Phys. Lett. 53, 508 (1988) , “Passivation of Paramagnetic Si-SiO2 Interface States with Molecular Hydrogen”, K. L. Brower.Dry thermal oxides were grown on (111) silicon substrates at 850 °C. The Pb centers associated with this (111) Si-SiO2 interface were observed with electron paramagnetic resonance to be stable under subsequent annealing in vacuum up to at least 850 °C. The... (Read more)
- 603. Appl. Phys. Lett. 53, 749 (1988) , “Physical origin of the DX center”, J. C. Bourgoin and A. MaugerWhen intervalley mixing effects are large enough, they induce a sharp shallow deep instability for a substitutional impurity. We show that this is the case in GaAs for the ground state associated with the L valleys, which becomes located in the forbidden gap under hydrostatic pressure or in... (Read more)
- 604. Appl. Phys. Lett. 53, 959 (1988) , “Characterization of semi-insulating GaAs wafers by room-temperature EL2-related photoluminescence”, Michio TajimaDeep level photoluminescence (PL) associated with the dominant midgap donor EL2 in semi-insulating (SI) GaAs crystals has been observed for the first time at room temperature. A broad emission band with a peak at 0.65 eV was observed always in commercial undoped SI GaAs wafers. The association of... (Read more)
- 605. Superlatt. Microstruct. 5, 99-102 (1989) , “Electron-spin-resonance in an AlGaAs---GaAs single-side doped quantum-well”, F. Malcher, G. Lommer, M. Dobers and G. WeimannThe spin-splitting of subband Landau levels in an Al0.35Ga0.65As-GaAs single-side doped quantum well is calculated selfconsistently using an effective 2×2 subband Hamiltonian, which is derived from a five-level k · p-model by fourth order perturbation theory and includes remote band... (Read more)
- 606. Sov. Phys. Solid State 31, 1376 (1989) , “Equivalent States of Muonium and Hydrogen in Silicon”, R. B. Gelfand, V. A. Gordeev, Yu. V. Gorelkinski?, R. F. Konopleva, S. A. Kuten, A. V. Mudry?, N. N. Nevinny?, Yu. V. Obukhov, V. I. Rapoport, A. G. Ulyashin, V. G. Firsov.An experimental investigation was made of the hydrogenic states having an anisotropic hyperfine structure, which were formed in silicon single crystals as a result of implantation of high-energy muons and protons. The characteristics of the states of "anomalous" muonium (Mu*) and a hydrogen center (Si-AA9, investigated by the methods of muon spin rotation (μSR) and electron spin resonance (ESR) in silicon allowing for the isotopic effect, were found to be similar. This was the basis for hypothesizing the existence of two equivalent structures in silicon (Mu*) and Si-AA9), differing only with respect to the mass of the hydrogenic atom occuring in each of the centers. Semiemprecal cluster calculations were made of the electronic structure of the se centers under conditions of hydrogen (muonium) localization at different lattice interstices. The parameters of the hyperfine interaction and the electronic g factors of the impurity atom were calculated. The most probable configuration of the Mu* and Si-AA9 complexes, and their charge state were established.
- 607. Sov. Phys. Semicond. 23, 44 (1989) , “Influence of random fields on the ESR spectrum of MnGa acceptors in p-type GaAs”, N. S. Averkiev, A. A. Gutkin, O. G. Krasikova, E. B. Osipov, M. A. Reshchikov
- 608. Solid State Commun. 70, 807 (1989) , “EPR Identification of a Trigonal FeIn Defect in Silicon”, P. Omling, P. Emanuelsson, W. Gehlhoff and H. G. GrimmeissA new electron paramagnetic resonance signal is observed in silicon which has been co-doped with indium and iron. The spectrum shows trigonal symmetry, and the involvement of one Fe and one In atom is proven from the observed hyperfine interactions. The defect is identified as an InS-Fei pair... (Read more)
- 609. Semicond. Sci. Technol. 4, 1000 (1989) , “The .Si ≡ Si3 defect at various (111)Si/SiO2 and (111)Si/Si3N4 interfaces”, A. Stesmans.The low-temperature (2 ≤ T ≤ 45 K) X- and K-band electron spin resonance (ESR) properties of the Si/SiO2 interfacial (111) PbO defect-identified with .Si ≡ Si3 and with the unpaired sp3 hybrid along (111)-as localised at three 'different'... (Read more)
- 610. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 611. phys. stat. sol. (b) 156, 325 (1989) , “EPR of Lithium-Induced Silicon-5dn Pairs in Silicon”, M. Höhne.A platinum-analogue to the lithium-induced silicon-gold pair, previously investigated, is now detected by EPR. The results underline the close similarity of platinum- and gold-related defects in silicon and suggest a remark concerning the absence of an EPR-proof of the isolated gold defect, contrary... (Read more)
- 612. Phys. Rev. Lett. 58, 1780 (1989) , “Determination of the electronic structure of anomalous muonium in GaAs from nuclear hyperfine interactions ”, R. F. Kiefl, M. Celio, T. L. Estle, G. M. Luke, S. R. Kreitzman, J. H. Brewer, D. R. Noakes, E. J. Ansaldo, and K. NishiyamaNuclear hyperfine structure of the anomalous muonium center (Mu*) in GaAs has been resolved in muon-spin-rotation frequency spectra and studied in detail by level-crossing-resonance spectroscopy. A comparison of the measured hyperfine parameters with the free-atom values indicates that... (Read more)
- 613. Phys. Rev. Lett. 62, 1884 (1989) , “Structure and properties of hydrogen-impurity pairs in elemental semiconductors”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. PantelidesA variety of experiments have revealed several puzzling properties of hydrogen-impurity pairs. For example, H atoms passivate the electrical activity of some impurities, whereas they induce electrical activity in others; they appear to tunnel around some impurities but not around others. We report... (Read more)
- 614. Phys. Rev. Lett. 63, 1027 (1989) , “Quantum or classical motion of H in Si:B?”, A. M. StonehamA Comment on the letter by M. Stavola et al., Phys. Rev. Lett. 61, 2786 (1988). (Read more)
- 615. Phys. Rev. Lett. 63, 2276 (1989) , “Photoluminescence transients due to hole capture at DX centers in AlxGa1-xAs:Si”, G. Brunthaler, K. Ploog, W. JantschThe near-band-gap photoluminescence of AlGaAs:Si shows a slow intensity transient after cooling the sample in darkness to low temperatures. This transient correlates to the Si dopant concentration. By investigating the behavior for below- and above-band-gap illumination we show that the observed... (Read more)
- 616. Phys. Rev. B 20, 1823 (1989) , “E? center in glassy SiO2: Microwave saturation properties and confirmation of the primary 29Si hyperfine structure”, David L. GriscomElectron-spin-resonance studies of a series of air-annealed samples of glassy SiO2 having various degrees of enrichment (or depletion) in the 29Si isotope have confirmed that a ?-ray-induced doublet of 420-G splitting is the 29Si hyperfine structure of the well-known... (Read more)
- 617. Phys. Rev. B 39, 10063 (1989) , “Energetics of DX-center formation in GaAs and AlxGa1-xAs alloys ”, D. J. Chadi, K. J. ChangThe energetics of the shallow-deep transition of donor states in AlxGa1-xAs alloys and the problem of Fermi-level pinning by DX centers in highly doped GaAs are examined via simple theoretical models and ab initio self-consistent pseudopotential total-energy calculations. The... (Read more)
- 618. Phys. Rev. B 39, 10791-10808 (1989) , “Theory of hydrogen diffusion and reactions in crystalline silicon”, Chris G. Van de Walle, P. J. H. Denteneer, Y. Bar-Yam, and S. T. PantelidesThe behavior of hydrogen in crystalline silicon is examined with state-of-the-art theoretical techniques, based on the pseudopotential-density-functional method in a supercell geometry. Stable sites, migration paths, and barriers for different charge states are explored and displayed in total-energy... (Read more)
- 619. Phys. Rev. B 39, 10809 (1989) , “Microscopic structure of the hydrogen-boron complex in crystalline silicon”, P. J. H. Denteneer, C. G. Van de Walle, and S. T. PantelidesThe microscopic structure of hydrogen-boron complexes in silicon, which result from the passivation of boron-doped silicon by hydrogen, has been extensively debated in the literature. Most of the debate has focussed on the equilibrium site for the H atom. Here we study the microscopic structure of... (Read more)
- 620. Phys. Rev. B 39, 11183 (1989) , “Threshold energy for photogeneration of self-trapped excitons in SiO2”, Chihiro Itoh, Katsumi Tanimura, and Noriaki ItohThe excitation spectrum of the 2.8-eV luminescence band of crystalline SiO2 has been measured in a photon energy range between 6 and 14 eV at 77 K. We find that the onset of the 2.8-eV luminescence occurs at 8.3 eV, which is nearly equal to the fundamental optical absorption edge of... (Read more)
- 621. Phys. Rev. B 39, 13327 (1989) , “Structure of the 0.767-eV oxygen-carbon luminescence defect in 450 °C thermally annealed Czochralski-grown silicon”, W. Kürner, R. Sauer, A. Dörnen, and K. ThonkeThe oxygen-carbon luminescence defects with no-phonon emission at 0.767 eV (‘‘P line’’) and 0.79 eV (‘‘C line’’) created in pulled silicon after 450 °C thermal annealing or electron irradiation, respectively, are investigated in a comparative study. This includes investigation of... (Read more)
- 622. Phys. Rev. B 39, 1648 (1989) , “Silicon Electron-Nuclear Double-Resonance Study of the NL10 Heat-Treatment Center”, H. H. P. Th. Bekman, T. Gregorkiewicz, and C. A. J. Ammerlaan29Si electron-nuclear double-resonance (ENDOR) measurements were performed for the Si-NL10 center. The results were compared with the 29Si ENDOR measurements of the Si-NL8 spectrum and were found to be similar with the defect electron being even more delocalized in the case of... (Read more)
- 623. Phys. Rev. B 39, 1966 (1989) , “Comment on "Atomic model for the EL2 defect in GaAs"”, H. J. von Bardeleben, J. C. Bourgoin, D. StievenardThe AsGa-VGa-VAs model for the EL2 defect in liquid encapsulated Czochralski grown GaAs proposed by Wager and Van Vechten is not supported by the experimental results: Neither divacancy defects nor gallium-vacancy-related defects have been observed by positron... (Read more)
- 624. Phys. Rev. B 39, 2864 (1989) , “Observation of the Localized Si Dangling-Bond Pb Defect at the Si/Si3N4 Interface”, A. Stesmans, G. Van Gorp.Low-temperature electron-spin resonance (ESR) reveals the presence of the Pb defect (identified with Si?Si3) at the thermally grown (111)Si/Si3N4 interface. This constitutes the first observation of this defect (called PbN) at a natural Si/solid... (Read more)
- 625. Phys. Rev. B 39, 5538 (1989) , “Unification of the properties of the EL2 defect in GaAs”, M. Hoinkis, E. R. Weber, W. Walukiewicz, J. Lagowski, M. Matsui, H. C. Gatos, B. K. Meyer, J. M. SpaethWe provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results... (Read more)
- 626. Phys. Rev. B 39, 5554 (1989) , “Electron-paramagnetic-resonance measurements of Si-donor-related levels in AlxGa1-xAs”, P. M. Mooney, W. Wilkening, U. Kaufmann, T. F. KuechWe report measurements of an EPR signal in indirect-gap Si-doped AlxGa1-xAs whose intensity increases after illumination at low temperature. The data indicate that this signal comes from a hydrogenic level associated with the X valley of the conduction band. Measurements of the... (Read more)
- 627. Phys. Rev. B 39, 6253 (1989) , “Electron paramagnetic resonance identification of the SbGa heteroantisite defect in GaAs:Sb”, M. Baeumler, J. Schneider, U. Kaufmann, W. C. Mitchel, P. W. YuGaAs doped with antimony (Sb) to a level of 1019 cm-3 has been studied by electron paramagnetic resonance (EPR). A new EPR spectrum has been discovered which is identified as the SbGa heteroantisite defect. The electronic structure of this defect is practically... (Read more)
- 628. Phys. Rev. B 39, 7978 (1989) , “Structure of the Heat-Treatment Centers NL8 and NL10 in Silicon”, J. Michel, N. Meilwes, J. –M. Spaeth.An electron-spin-resonance investigation on n-type (P-doped) and an electron-nuclear double-resonance (ENDOR) investigation on p-type (B- and Al-doped) Czochralski-grown oxygen-rich Si was performed after annealing at 460 °C and formation of the heat-treatment centers Si-NL8 and Si-NL10. The NL10... (Read more)
- 629. Phys. Rev. B 40, 11644 (1989) , “Hydrogen bonding and diffusion in crystalline silicon”, K. J. ChangThe nature of hydrogen bonding and diffusion in crystalline Si was investigated using an ab initio self-consistent pseudopotential method. The relative energies of interstitial atomic hydrogen, diatomic hydrogen complexes, and shallow dopant-hydrogen complexes were examined. We present a mechanism... (Read more)
- 630. Phys. Rev. B 40, 1732 (1989) , “Structure of Thermal Donors (NL8) in Silicon: A Study with Electron-Nuclear Double Resonance”, J. Michel, J. R. Niklas, J. –M. Spaeth.Singly ionized thermal donors [(TD)+], which give rise to the NL8 ESR spectrum, were investigated with electron-nuclear double resonance (ENDOR) in B-doped Czochralski-grown silicon and float-zone silicon into which the magnetic isotope 17O was diffused. TD’s were formed by... (Read more)
- 631. Phys. Rev. B 40, 3872 (1989) , “Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs”, Mark Hoinkis and Eicke R. WeberTemperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (AsGa+) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically... (Read more)
- 632. Phys. Rev. B 40, 4037 (1989) , “Oxygen-Vacancy Complex in Silicon. I. 29Si Electron-Nuclear Double Resonance”, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The negative charge state of the oxygen-vacancy complex in silicon has been studied by electron-nuclear double resonance. Hyperfine interactions between the unpaired electron and 29Si nuclei in 50 shells of neighboring lattice sites have been determined. These shells contain 145 lattice... (Read more)
- 633. Phys. Rev. B 40, 4054 (1989) , “Oxygen-Vacancy Complex in Silicon. II. 17O Electron-Nuclear Double Resonance”, R. van Kemp, M. Sprenger, E. G. Sieverts, C. A. J. Ammerlaan.An electron-nuclear double-resonance (ENDOR) study was performed on the negatively charged oxygen-vacancy complex in silicon. By introducing the isotope 17O (nuclear spin I=(5/2) to an enrichment of about 40%, it was possible to detect ENDOR transitions of this nucleus. In the experiment... (Read more)
- 634. Phys. Rev. B 40, 6509 (1989) , “Cross-relaxation dynamics of optically excited N-V centers in diamond”, E. van Oort, M. GlasbeekUpon the cw optical excitation of N-V centers in diamond, a spin alignment in the ensemble of nonexcited N-V defects in the electron spin-triplet ground state is induced. When the diamond sample is subjected to magnetic fields of suitable directions and strengths, cross relaxation (CR) and level... (Read more)
- 635. Jpn. J. Appl. Phys. 28, 1402 (1989) , “Method for Estimating Accurate Deep-Trap Densities from DLTS of Junctions Containing Several Kinds of Deep-Traps ”, Hiroshi Nakashima and Kimio HashimotoThe density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a... (Read more)
- 636. Jpn. J. Appl. Phys. 28, 142 (1989) , “Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon”, A. Hara, T. Fukuda, T. Miyabo, I. Hirai.We observed the electron spin resonance of oxygen-nitrogen complexes (ONCs) and found that they have C2V symmetry. Although they contain nitrogen, hyperfine interaction (hf) with nitrogen cannot be clearly observed. These characters of ONCs resemble thermal donors (TDs) very closely. (Read more)
- 637. Jpn. J. Appl. Phys. 28, L891 (1989) , “The Local-Environment-Dependent DX Centers: Evidence for the Single Energy Level with a Specified Configuration”, Toshio Baba, Masashi Mizuta, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoThe energy-level structure of the DX centers corresponding to specific local environments was investigated under hydrostatic pressure. Several discrete DX levels, each of which was a well-defined single level, were clearly resolved. The energy level of the Si... (Read more)
- 638. J. Vac. Sci. Technol. B 7, 710 (1989) , “Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures”, M. Kaminska, E. R. Weber, Z. Liliental-Weber, R. Leon, Z. U. RekGaAs layers grown by molecular-beam epitaxy (MBE) at very low substrate temperatures have gained considerable interest as buffer layers for GaAs metalsemiconductor field effect transistors (MESFET's) due to high resistivity and excellent device isolation. However, the structure and the... (Read more)
- 639. J. Phys.: Condens. Matter 1, 10549 (1989) , “14N ENDOR of the OK1 centre in natural type Ib diamond”, M. E. Newton, J. M. BakerAn ENDOR investigation has confirmed that the OK1 centre is a low-symmetry ( sigma h) centre, incorporating a single nitrogen atom. The 14N hyperfine and quadrupole coupling matrices have been determined by fitting the data to an exact solution of the energy matrix. Using this... (Read more)
- 640. J. Phys.: Condens. Matter 1, 35 (1989) , “The Structure of Chalcogen Pairs in Silicon”, S. Greulich-Weber, J. R. Niklas, J. M. Spaeth.The chalcogen pair centres (S-S)+ and (Se-Se)+ in Si were investigated with electron-nuclear double resonance (ENDOR). It was possible to resolve the superhyperfine interactions with 16 shells ((S-S)+) and 20 shells ((Se-Se)+) of 29Si neighbours... (Read more)
- 641. J. Phys.: Condens. Matter 1, 9801 (1989) , “14N ENDOR of the N2 centre in diamond”, M. E. Newton, J. M. Baker14N ENDOR in the N2 centre in diamond demonstrates that nitrogen is a constituent of the centre. (Read more)
- 642. J. Non-Cryst. Solids 111, 16-28 (1989) , “Mechanism of photochromism in oxide glasses containing a large amount of CdO or ZnO”, H. Kawazoe, R. Suzuki, S. Inoue and M. YamaneUV-induced optical and ESR absorptions of borosilicate glasses containing a large amount ( 50 mol%) of CdO or ZnO were measured at room temperature and 77 K while changing the wavelength of the illuminating light. The induced optical absorption was one order of magnitude stronger at 77 k than at... (Read more)
- 643. J. Electrochem. Soc. 136, 2015 (1989) , “Interlaboratory Determination of the Calibration Factor for the Measurement of the Interstitial Oxygen Content of Silicon by Infrared Absorption”, A. Baghdadi and W. M. Bullis and M. C. Croarkin and Yue-zhen Li and R. I. Scace and R. W. Series and P. Stallhofer and M. Watanabe
- 644. J. Electrochem. Soc. 136, 2025 (1989) , “Correction Factors for the Determination of Oxygen in Silicon by IR Spectrometry”, F. Schomann and K. Graff
- 645. J. Chem. Phys. 91, 69 (1989) , “Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+ ”, Lon. B. Knight, Jr. and John O. HerlongThe 69GaP + and 71GaP + molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance (ESR) investigation. The ground electronic state of GaP +... (Read more)
- 646. J. Appl. Phys. 65, 2723 (1989) , “Theoretical model for self-interstitial generation at the Si/SiO2 interface during thermal oxidation of silicon”, Kenji Taniguchi, Yoshiaki Shibata, and Chihiro HamaguchiUsing a grating pattern of parallel nitride and oxide stripes on the silicon surface, self-interstitial concentration at the Si/SiO2 interface is accurately determined by means of oxidation-induced stacking fault growth observation. The results show that the interstitial concentration at... (Read more)
- 647. J. Appl. Phys. 65, 600 (1989) , “A new family of thermal donors generated around 450 °C in phosphorus-doped Czochralski silicon”, Yoichi Kamiura, Fumio Hashimoto, and Minoru YonetaWe have discovered a new family of oxygen-related double donors [new thermal donors (NTD's)] generated around 450 °C in phosphorus-doped Czochralski silicon by combining deep-level transient spectroscopy with Hall measurements. This new family was well distinguished from the normal family of... (Read more)
- 648. J. Appl. Phys. 66, 3026 (1989) , “Perturbed angular correlation studies of dopant atom interactions in silicon”, Th. Wichert and M. L. SwansonThe perturbed angular correlation (PAC) technique was used to study the interaction of implanted 111 In probe atoms with the donor atoms P, As, and Sb in Si. Nearest-neighbor pairs of In-P, In-As, and In-Sb atoms, characterized by Q1 =179(1), 229(1), and 271(1) MHz,... (Read more)
- 649. J. Appl. Phys. 66, 4529 (1989) , “Electron spin resonance in electron-irradiated 3C-SiC”, Hisayoshi Itoh, Naohiro Hayakawa, Isamu Nashiyama, Eiichiro SakumaElectron-irradiation-induced defects in epitaxially grown 3C-SiC crystals have been studied by electron-spin-resonance (ESR) measurements. The results indicate the presence of an isotropic ESR center that consists of five lines equally spaced at about 1.5 G and has a g value of... (Read more)
- 650. J. Appl. Phys. 66, 780 (1989) , “P-Rich Si Particles in Separation by Implanted Oxygen Structures Revealed by Low-Temperature Electron-Spin Resonance”, G. Van Gorp and A. StesmansLow-temperature X- and K-band electron-spin-resonance measurements on separation by implanted oxygen structures formed by implanting oxygen to a dose 1.7×1018 cm2 on [001] c-Si wafersboth n and p type [dopant concentration... (Read more)
- 651. IEEE Trans. Nucl. Sci. 36, 1800-1807 (1989) , “A spin dependent recombination study of radiation induced defects at and near the Si/SiO2 interface”, M. A. Jupina , P. M. Lenahan
- 652. Chin. Phys. 9, 976 (1989) , “Photoquenching of electronic paramagnetic resonance "AsGa" and metastable mechanism of EL2 defect in GaAs”, Zou Yuan-xi , Wang Guang-yu
- 653. Appl. Surf. Sci. 39, 392 (1989) , “THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS SILICON NITRIDE FILMS: EVIDENCE FOR A NEGATIVE CORRELATION ENERGY”, P. M. Lenahan and D. T. KrickJ. KanickiA recent study by Krick and coworkers provided the first direct evidence associating a specific point-defect with trapping phenomena in silicon nitride films. Krick and coworkers demonstrated that silicon “dangling bond” centers in silicon nitride films are electrically neutral when... (Read more)
- 654. Appl. Phys. Lett. 54, 1881 (1989) , “Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures”, M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, A. R. CalawaGaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree... (Read more)
- 655. Appl. Phys. A 48, 59 (1989) , “Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy ”, Th. Wichert, M. Deicher, G. Grbel, R. Keller, N. Schulz and H. SkudlikThe formation of molecule-like complexes, consisting of a defect and a radioactive 111In atom, is studied using the perturbed γγ angular correlation technique (PAC). The complexes are characterized by their defect specific electric field gradients which also contain information on the geometry of the formed complexes. Whereas the complex is formed with the111In atom, its electric field gradient is measured after the decay of the radioactive 111In atom to 111Cd. Formation and dissolution of the molecule-like complexes is pursued for a variety of different conditions, such as sample temperature, dopant concentration and position of the Fermi level. In particular, the interaction of In atoms with the following defects in Si was investigated: Intrinsic defects, created by particle irradiation; substitutional donor atoms (P, As, Sb, Bi); and interstitial impurity atoms (Li, H, and an unidentified X defect); especially, the latter ones are known to passivate acceptor atoms in Si. Methodology and specific properties of the PAC technique will be illustrated with the help of these examples. (Read more)
- 656. Appl. Phys. A 49, 123 (1989) , “Thermal double donors in silicon ”, P. Wagner and J. HageA family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics. (Read more)
- 657. Vacuum 41, 1633-1635 (1990) , “Characterization of defects on ZnO and Ru---ZnO: a structural, TPD, and spectroscopic study”, M. G. CattaniaP. d'AntonaF. Morazzoni and R. ScottiSurface and bulk defects in ZnO were recognized as interstitial zinc atoms and surface oxygen vacancies (V0)s by means of XRD, SEM, TPD and ESR measurements. Dispersion of ruthenium at the ZnO surface induces an electron transfer from ZnO defects to the metal as revealed by ESR and XPS spectroscopy. (Read more)
- 658. Sov. Phys. Solid State 32, 1292 (1990) , “Relationship between a Combined Resonance in Plastically Deformed n-Type Silicon with a Dislocation Structure”, V. V. Kveder, T. R. Mchedlidze, Yu. A. Osip’yan, A. I. Shalynin.
- 659. Sov. Phys. Semicond. 24, 851 (1990) , “Electron Spin Resonance of FeFeB Complexes in Silicon”, A. A. Ezhevski?, C. A. J. Ammerlaan.
- 660. Solid State Commun. 73, 393 (1990) , “Electron paramagnetic resonance of nickel in silicon. — I. Identification of spectrum”, L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, V. A. KhramtsovResults are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions... (Read more)
- 661. Solid State Commun. 74, 1003 (1990) , “Observation of dipolar interactions in a dilute two-dimensional spin system: °Si ≡ Si3 defects at the (1 1 1)Si/SiO2 interface”, A. Stesmans, G. Van Gorp.K-band spectron spin resonance spectra measured at 4.3 K reveal for the first time dipole-dipole (DD) interaction effects between [1 1 1]Pb centers. These are °Si ≡ Si3 defects with unpaired sp3 hybrid |[1 1 1] located at the essentially 2-dimensional (1 1 1)Si/SiO2 interface. Both line... (Read more)
- 662. Solid State Commun. 75, 115 (1990) , “Magnetic Resonance Spectroscopy of Zinc Doped Silicon”, H. E. Altink, T. Gregorkiewicz and C. A. J. AmmerlaanThe spin-Hamiltonian analysis is presented of five new electron paramagnetic resonance spectra observed in silicon after indiffusion of zinc impurity. On the basis of hyperfine interactions one of the spectra is identified with a monoclinic ZnCu pair, while another spectrum arises from a trigonal... (Read more)
- 663. Solid State Commun. 76, 1083 (1990) , “Electrically detected magnetic resonance in p-n junction diodes ”, F. Rong, E. H. Poindexter, M. Harmatz and W. R. BuchwaldG. J. GerardiElectrically-detected magnetic resonance from spin-dependent recombination or generation has been observed in various Si p-n junction diodes. The g-values varied widely among similar diodes of different manufacture; most differed from Si damage at g ≈ 2.0055 reported by other researchers. The... (Read more)
- 664. phys. stat. sol. (a) 121, 63 (1990) , “Point Paramagnetic Defects in Diamond Irradiated by High-Energy Ions”, D. P. Erchak, R. B. Grelfand, N. M. Penina, V. F. Stelmakh, V. P. Tolstykh, A. G. Ulyashin, V. S. Varichenko, A. M. ZaitsevA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 665. Phys. Rev. Lett. 64, 2042 (1990) , “New insight into silicide formation: The creation of silicon self-interstitials ”, Maria Ronay and R. G. SchadDiffusion studies of Cu+Re and Re+CU films on silicon show that the formation of Cu3Si precursor lowers the formation temperature of ReSi2 from over 900 to 550 °C. The results are explained and generalized to all metal-rich silicides by the specific volume of silicon being... (Read more)
- 666. Phys. Rev. Lett. 64, 3042 (1990) , “Microscopic identification and electronic structure of a di-hydrogen–vacancy complex in silicon by optical detection of magnetic resonance”, W. M. Chen, O. O. Awadelkaim, B. Monemar, J. L. Lindström, G. S. Oehrlein.We present a microscopic identification of a hydrogen-related-complex defect in electron-irradiated, hydrogenated, boron-doped, single-crystalline silicon, by optical detection of magnetic resonance. The symmetry of this defect has been deduced as C2v, and from the observed hyperfine... (Read more)
- 667. Phys. Rev. Lett. 65, 2046 (1990) , “Anion-Antisite-like Defects in III-V Compounds”, M. J. Caldas, J. Dabrowski, A. Fazzio, and M. SchefflerWe report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift... (Read more)
- 668. Phys. Rev. Lett. 65, 207 (1990) , “First Observation of Paramagnetic Nitrogen Dangling-Bond Centers in Silicon Nitride”, William L. Warren, P. M. Lenahan, and Sean E. CurryWe report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron’s wave function is almost... (Read more)
- 669. Phys. Rev. B 41, 10206 (1990) , “Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures”, U. Kaufmann, W. Wilkening, P. M. Mooney, T. F. KuechWe report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x≥0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain... (Read more)
- 670. Phys. Rev. B 41, 12354-12357 (1990) , “Negative-charge state of hydrogen in silicon”, J. Zhu, N. M. Johnson, and C. HerringIt is demonstrated that hydrogen can migrate in silicon as a negatively charged species (H-). The evidence is the combined observation of a strong electric-field dependence in the rate of removal of PH complexes during bias-temperature stress of hydrogenated Schottky-barrier diodes and... (Read more)
- 671. Phys. Rev. B 41, 12628 (1990) , “Comparative Study of Si-NL8 and Si-NL10 Thermal-Donor-Related EPR Centers”, T. Gregorkiewicz, H. H. P. Th. Bekman, and C. A. J. AmmerlaanThe current status of the electron-paramagnetic-resonance and electron-nuclear double-resonance (ENDOR) studies of thermal-donor (TD) centers in silicon is critically reviewed. The structural models developed for the TD-related Si-NL8 and Si-NL10 heat-treatment centers are presented. On the basis of... (Read more)
- 672. Phys. Rev. B 41, 3794 (1990) , “Luminescence and defect formation in undensified and densified amorphous SiO2”, Chihiro Itoh, Toshio Suzuki, and Noriaki ItohLuminescence and optical absorption induced by an electron pulse and by a subsequent laser pulse have been studied in densified and undensified amorphous SiO2 at 77 K. We find that the decay of the optical-absorption change induced by an electron pulse consists of two components: one... (Read more)
- 673. Phys. Rev. B 41, 3905 (1990) , “Fourier-transform and continuous-wave EPR studies of nickel in synthetic diamond: Site and spin multiplicity”, J. Isoya, H. Kanda, J. R. Norris, J. Tang, M. K. BowmanPulsed, Fourier-transform, and continuous-wave electron paramagnetic resonance methods are used to study the g=2.0319 EPR signal in synthetic diamond crystals. This signal is from Ni which is found to be located at a substitutional site in the diamond lattice without detectable nearby charge... (Read more)
- 674. Phys. Rev. B 41, 5283 (1990) , “Fine structure of excitons in type-II GaAs/AlAs quantum wells”, H. W. van Kesteren, E. C. Cosman, W. A. J. A. van der Poel, C. T. FoxonOptically detected magnetic resonance in zero field as well as in a finite magnetic field has been used to study the excitons in type-II GaAs/AlAs quantum wells. The spectra are analyzed using the appropriate spin Hamiltonian for the quasi-two-dimensional indirect excitons. The electron-hole... (Read more)
- 675. Phys. Rev. B 41, 8560 (1990) , “Electron Paramagnetic Resonance Identification of the Orthorhombic Iron-Indium Pair in Silicon”, W. Gehlhoff, P. Emanuelsson, P. Omling, and H. G. GrimmeissA different EPR spectrum (Lu4) in silicon doped with indium and iron is reported together with an EPR spectrum previously observed by Ludwig and Woodbury. The two spectra show orthorhombic symmetry and are found to originate from the same FeIn pair. They are explained as transitions within the two... (Read more)
- 676. Phys. Rev. B 42, 11352-11354 (1990) , “Source of 17O hyperfine broadening of the Pb resonance associated with the (111) Si-SiO2 interface”, K. L. BrowerThe Pb center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO2 interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 °C of (111) silicon with O2 enriched with 17O (I=5/2) to 51.26% is observed... (Read more)
- 677. Phys. Rev. B 42, 11791 (1990) , “Donor states in GaAs under hydrostatic pressure”, X. Liu, L. Samuelson, M.-E. Pistol, M. Gerling, and S. NilssonSpectroscopic studies have been carried out for GaAs crystals under hydrostatic pressure, intended for the investigation of effective-mass donor levels associated with different conduction-band minima and the DX center. Our results reveal the existence of three donor states appearing in the band... (Read more)
- 678. Phys. Rev. B 42, 1500 (1990) , “Electron-paramagnetic-resonance study of the Te donor in Ga0.70Al0.30As”, H. J. von Bardeleben, M. Zazoui, S. Alaya, P. GibartWe report an electron-paramagnetic-resonance (EPR) study of a group-VI donor in Ga1-xAlxAs (x=0.30). No EPR spectrum associated with the DX ground state could be detected. After photoexcitation with E?0.6 eV an EPR spectrum is observed, which is attributed to the... (Read more)
- 679. Phys. Rev. B 42, 1731 (1990) , “Electron-Paramagnetic-Resonance Identification of a Trigonal Manganese-Indium Pair in Silicon”, J. Kreissl, W. Gehlhoff, P. Omling, P. Emanuelsson.A new, defect-related electron-paramagnetic-resonance (EPR) spectrum in silicon doped with indium and manganese is reported. The spectrum shows trigonal symmetry, and the involvements of Mn and In in the defect are proven from the observed hyperfine interactions. A complicated and unusual... (Read more)
- 680. Phys. Rev. B 42, 1773 (1990) , “Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, William L. Warren and P. M. LenahanWe report the first observation of 14N nearest-neighbor hyperfine interactions with an unpaired electron on silicon dangling-bond centers, K centers, in silicon nitride generated by ultraviolet or gamma irradiation. We observe this interaction using electron-nuclear double-resonance... (Read more)
- 681. Phys. Rev. B 42, 3444 (1990) , “Dissociation Kinetics of Hydrogen-Passivated (111) Si-SiO2 Interface Defects”, K. L. Brower.This paper is concerned with the chemical kinetics of the transformation of hydrogen-passivated interface defects (HPb centers) into paramagnetic Pb centers (?Si?Si3) at the (111) Si-SiO2 interface under vacuum thermal annealing. Float-zone (111) silicon... (Read more)
- 682. Phys. Rev. B 42, 3461 (1990) , “EPR evidence for As interstitial-related defects in semi-insulating GaAs”, E. Christoffel, T. Benchiguer, A. Goltzené, C. Schwab, Wang Guangyu, Wu JuWe report the analysis of the residual paramagnetic structure appearing in semi-insulating GaAs after microwave saturation of the AsGa-related spectrum and most intense after preliminary plastic deformation of the material. It is separable into two similar and correlated central hyperfine... (Read more)
- 683. Phys. Rev. B 42, 3765 (1990) , “Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface”, A. Stesmans, G. Van GorpDipole-dopole (DD) interactions between Pb0 (Si?Si3) defects at the two-dimensional (2D) (111) Si/SiO2 interface are revealed by electron-spin resonance. A DD fine-structure doublet develops with increasing [Pb0] resulting in a line shape characteristic of... (Read more)
- 684. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 685. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon–substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ‘‘molecule’’... (Read more)
- 686. Phys. Rev. B 42, 7174 (1990) , “Stability of DX centers in AlxGa1-xAs alloys ”, S. B. Zhang, D. J. ChadiThe band-gap dependence of the binding energy of Si-induced DX centers in AlxGa1-xAs alloys was determined from an ab initio total-energy approach. Band-structure modifications resulting from changes in alloy composition and hydrostatic pressure were examined. The... (Read more)
- 687. Phys. Rev. B 42, 8605 (1990) , “Low-field optically detected magnetic resonance of a coupled triplet-doublet defect pair in diamond”, Eric van Oort, Paul Stroomer, and Max GlasbeekMicrowave-induced changes in the optical emission of the N-V center in diamond have previously been attributed to magnetic resonance of the defect in its 3A ground state [E. van Oort et al., J. Phys. C 21, 4385 (1988)]. In this paper, the focus is on the origin of the hyperfine splittings... (Read more)
- 688. Phys. Rev. B 42, 9664 (1990) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, A. ShlugerThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 689. Phys. Rev. B 42, 9843 (1990) , “EPR studies of interstitial Ni centers in synthetic diamond crystals”, J. Isoya, H. Kanda, Y. UchidaTwo new electron-paramagnetic-resonance (EPR) spectra, tentatively labeled NIRIM-1 and NIRIM-2, have been studied using synthetic diamond crystals grown from the Ni solvent to which various amounts of nitrogen getters (Ti, Zr) and/or boron were added. The NIRIM-1 spectrum (g=2.0112) having the... (Read more)diamond| EPR| NIRIM1 NIRIM2 .inp files: diamond/NIRIM1 diamond/NIRIM2 | last update: Masatoshi Sasaki
- 690. Opt. Lett. 15, 1094 (1990) , “Raman heterodyne detected electron-nuclear-double-resonance measurements of the nitrogen-vacancy center in diamond”, N. B. Manson, X. -F. He, P. T. H. FiskWe report two new applications of the Raman heterodyne detection technique. Raman heterodyne detected electron-nuclear double resonance and a double rf resonance technique are used to obtain the hyperfine structure of the nitrogen-vacancy center in diamond. (Read more)
- 691. Opt. Lett. 15, 983 (1990) , “Raman heterodyne detection of electron paramagnetic resonance”, K. Holliday, X. -F. He, P. T. H. Fisk, N. B. MansonWe report the detection of an electron paramagnetic resonance signal using Raman heterodyne spectroscopy, a rf –optical double-resonance technique. The signals are associated with the nitrogen-vacancy center in diamond, which has a spin-triplet ground state. A three-line spectrum associated with the nitrogen hyperfine structure is observed for various magnetic field strengths and crystal orientations. (Read more)
- 692. Jpn. J. Appl. Phys. 29, L1572 (1990) , “Low-Temperature Static Magnetic Susceptibility of Al0.3Ga0.7As with DX Centers”, Shingo Katsumoto, Noriaki Matsunaga, Yasuhiro Yoshida, Katsuyuki Sugiyama, Shun-ichi KobayashiWe have measured the static magnetic susceptibility of Al0.3Ga0.7As doped with 1×1018 cm-3 Te from 20 mK to 1 K in order to study the electron ground state of the DX center. We observed Curie-law temperature dependence of the susceptibility which... (Read more)
- 693. Jpn. J. Appl. Phys. 29, L1937 (1990) , “Optical Properties of New Kinds of Thermal Donors in Silicon ”, Yoichi Kamiura, Masashi Suezawa1, Koji Sumino1 and Fumio HashimotoWe have found with far-infrared (FIR) absorption spectroscopy that prolonged annealing of silicon at 470°C leads to the generation of new FIR absorption bands. They are strongly correlated with a recently observed new type of oxygen-related thermal donor (NTD) which is different from either the... (Read more)
- 694. Jpn. J. Appl. Phys. 29, L388 (1990) , “Direct Evidence for the Negative-U Property of the DX Center as Studied by Hydrostatic Pressure Experiments on GaAs Simultaneously Doped with Ge and Si”, Toshimasa Fujisawa, Junji Yoshino, Hiroshi KukimotoDX centers in GaAs codoped with Ge and Si have been investigated under a hydrostatic pressure, where Ge acts as a DX center, and Si as a shallow donor. It is demonstrated that the number of electrons trapped by the Ge DX center at 22 kbar increases with Si concentration and tends to saturate at a... (Read more)
- 695. J. Phys.: Condens. Matter 2, 6707 (1990) , “Theory of the structure of the self-trapped exciton in quartz”, A J Fisher, W Hayes and A M StonehamQuartz is an insulator with an extremely wide band gap in the vacuum ultra-violet. However, under irradiation from high-energy electrons or X-rays, samples of high purity emit a luminescence band in the blue, corresponding to a Stokes shift of approximately 7 eV. This large Stokes shift has been... (Read more)
- 696. J. Non-Cryst. Solids 116, 289-292 (1990) , “Bleaching of peroxy radical in SiO2 glass with 5 eV light*1”, H. Hosono, R. A. WeeksPeroxy radical (POR) in SiO2 glass has been found to be bleached out by illumination with 5 eV light without accompanying changes in E′ and non-bridging oxygen hole centers. An absorption band centered at 4.8 eV (FWHM; ≈ 0.8 eV is also bleached together with POR. It is suggested that... (Read more)
- 697. J. Lumin. 45, 26 (1990) , “ANOMALOUS LINESHAPES IN RAMAN HETERODYNE DETECTED EPR”, P. T. H. Fisk, X. -F. He, K. Holliday and N. B. MansonAn unusual lineshape has been observed in the Raman heterodyne NMR and EPR signals associated with a nitrogen-vacancy centre in diamond. This lineshape is shown to result from power broadening effects and can be expected as a general result from any Raman heterodyne signal where the transition under... (Read more)
- 698. J. Electrochem. Soc. 137, 3642 (1990) , “Effects of Heat-Treatments on Electrical Properties of Boron-Doped Silicon Crystals”, Y. Kamiura, F. Hashimoto, and M. YonetaThe effects of heat-treatments around 1000ºC and subsequent annealing on the electrical properties of boron-dopedsilicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. Thehigh-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I–IV, of heat-treatment-induceddonors were observed on isochronal annealing up to 400°C. Conductivity changes in these stages can be explainedas described below by the reactions of interstitial iron (Fei), its pair (FeiBs) with substitutional boron (Bs), and twounknown donors (D1, D2). That is, stage I (25º–100ºC) D1 → sink and Fei + Bs → FeiBs, stage II (100º–150ºC):FeiBs → Fei + Bs, stage III (200º–250ºC): D2 → sink, stage IV (250º–350ºC): Fei → precipitation. Heat-treatments in an oxygenatmosphere greatly reduced the introduction of Fei and FeiBs in comparison with an argon atmosphere and mainly introducedD1 and D2 donors. The density of D2 was dependent on the heat-treatment temperature, while that of D1 showed almostno dependence. In stage I, D1 was annihilated by first-order kinetics with an activation energy of 0.8 eV. It was indicatedthat D1 and D2 have no relations to iron, copper, oxygen, nor carbon. Though their origins are still unidentified, theremay be some interstitial impurities. In stage IV, Fei is suggested to precipitate at oxygen precipitates and dislocation loopsformed by high-temperature heat-treatments. As to the application to iron gettering in the device fabrication process, it isproposed that annealing around 300ºC is most suitable as the final heat-treatment step to remove iron and related defectsfrom active regions of devices. (Read more)
- 699. J. Cryst. Growth 102, 701-705 (1990) , “Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide”, J. Wu, P. G. Mo and G. Y. WangS. Benakki, E. Christoffel, A. Goltzene and C. SchwabJ. R. Wang and C. H. LeeIn this study, the dislocation distribution in In-doped GaAs crystals is investigated by KOH etching. EPR (electron paramagnetic resonance) measurements are made on plastically deformed In-doped crystals. A mechanism for the elimination of dislocations by doping GaAs crystals with indium atoms is... (Read more)
- 700. J. Appl. Phys. 67, 2462 (1990) , “NL10 Defects Formed in Czochralski Silicon Crystals”, Akito Hara, Iesada Hirai, and Akira OhsawaThe electron spin resonance of defects formed in high-resistivity Czochralski silicon crystals annealed at 470 °C were observed. Defects with C2v symmetry in nitrogen in-diffused crystals annealed for less than about 50 h were observed. With annealing for more than about... (Read more)
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