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- 501. J. Appl. Phys. 81, 6056 (1997) , “Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures”, U. Egger, M. Schultz, P. Werner, O. Breitenstein, T. Y. Tan, and U. GöseleInterdiffusion coefficients on the group V sublattice of GaAs were determined in GaAsP/GaAs and GaAsSb/GaAs superlattices. Strained GaAs0.86P0.14/GaAs, GaAs0.8P0.2/GaAs0.975P0.025 and GaAs0.98Sb0.02/GaAs... (Read more)
- 502. J. Appl. Phys. 81, 3644 (1997) , “Growth and characterization of phosphorus doped diamond films using trimethyl phosphite as the doping source”, Rajat Roychoudhury, E. J. Charlson, T. Stacy, M. Hajsaid, E. M. Charlson, and J. M. MeesePhosphorus doped polycrystalline diamond films were grown by hot-filament chemical vapor deposition using trimethyl phosphite as the doping source. Phosphorus incorporation into the diamond films was established using secondary ion mass spectroscopy. Currentvoltage characteristics were... (Read more)
- 503. J. Appl. Phys. 81, 3512 (1997) , “Microscopic nature of thermally stimulated current and electrical compensation in semi-insulating GaAs”, S. Kuisma, K. Saarinen, and P. HautojärviIn this work undoped semi-insulating (SI) GaAs grown by vertical gradient freeze and liquid encapsulated Czochralski methods was studied by near-infrared absorption (NIRA), thermally stimulated current (TSC) and positron annihilation techniques. The positron experiments reveal both gallium and... (Read more)
- 504. J. Appl. Phys. 81, 3453 (1997) , “Electron paramagnetic resonance study of amorphous silicon produced by Kr + ion implantation into silicon”, B. Rakvin and B. PivacA detailed analysis of the electon paramagnetic resonance line shape was performed on amorphous Si samples obtained by Kr + ion implantation. The Lorentzian character and behavior upon annealing was explained via a strong exchange interaction, leading to a cluster model for the spin... (Read more)
- 505. J. Appl. Phys. 81, 3446 (1997) , “Positron annihilation investigations of vacancies in InP produced by electron irradiation at room temperature”, T. Bretagnon, S. Dannefaer, and D. KerrPositron lifetime investigations were done on a series of InP samples irradiated to various doses with 2.5 MeV electrons. In n-type materials, positron lifetimes of 265 ± 5 and 338 ± 15 ps are attributed to indium vacancyinterstitial complexes and divacancyinterstitial... (Read more)
- 506. J. Appl. Phys. 81, 3170 (1997) , “Electron migration in BaFCl:Eu2+ phosphors”, Wei ChenHere we report the electron migration by photo- or thermostimulation in BaFCl:Eu2+. Electrons released from F centers may be trapped by other defect sites to form F aggregates or another type of F center and vice versa. This migration reduces the photostimulated... (Read more)
- 507. J. Appl. Phys. 81, 3151 (1997) , “Stoichiometry-dependent deep levels in p-type InP”, Jun-ichi NishizawaPhotocapacitance measurement is applied to investigate the stoichiometry-dependent deep levels in p-type InP crystals doped with Zn prepared by 4 h annealing at 700 °C under controlled phosphorus vapor pressure. Photocapacitance results reveal three dominant deep levels. A dominant deep... (Read more)
- 508. J. Appl. Phys. 81, 3143 (1997) , “Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP”, L. Quintanilla, S. Dueñas, E. Castán, R. Pinacho, and J. BarbollaIn this work, we investigate the deep levels present in ion implanted and rapid thermal annealed (RTA) InP p+-n junctions. The samples were implanted with magnesium or coimplanted with magnesium and phosphorus. These levels were characterized using deep level transient... (Read more)
- 509. J. Appl. Phys. 81, 2916 (1997) , “Positron annihilation in electron-irradiated SixGe1 – x bulk crystals”, Atsuo Kawasuso and Sohei OkadaPosition lifetime measurement for SixGe1 x bulk crystals has been performed. The bulk lifetime of positron in the crystals varied between those for Ge and Si. The dependence of the lifetime on the alloy composition showed an abrupt change at x =... (Read more)
- 510. J. Appl. Phys. 81, 2904 (1997) , “Difference of interface trap passivation in Schottky contacts formed on (NH4)2Sx-treated GaAs and In0.5Ga0.5P”, C. R. Moon and Byung-Doo ChoeThe effects of (NH4)2Sx treatments on the interface traps in Au/n-GaAs and Au/n-In0.5Ga0.5P Schottky contacts are investigated by deep level transient spectroscopy measurements. The interface trap concentration in... (Read more)
- 511. J. Appl. Phys. 81, 2566 (1997) , “Substitutional phosphorus doping of diamond by ion implantation”, H. Hofsäss, M. Dalmer, M. Restle, and C. RonningWe have studied the lattice sites of ion-implanted radioactive 33P in natural IIa diamond using the emission channeling technique. 33P ions were implanted at room temperature with 30 keV and a rather low dose of 1011 cm 2 and the implanted samples... (Read more)
- 512. J. Appl. Phys. 81, 2391 (1997) , “Effect of Er dopant on the properties of In0.53Ga0.47As layers grown by liquid phase epitaxy”, S. Dhar, S. Paul, and M. MazumdarDetailed properties of In0.53Ga0.47As layers grown by liquid phase epitaxy from melts containing 0.04 and 0.1 wt % Er are reported. The carrier concentration in the material is reduced by almost two orders of magnitude as a result of Er doping. Low temperature photoluminescence... (Read more)
- 513. J. Appl. Phys. 81, 2288 (1997) , “Space-charge limited conduction processes in polybenzo[c]thiophene films”, I. MusaWe present an observation of extensive space-charge limited conduction in polybenzo[c]thiophene. Strong evidence for the presence of three discrete trapping levels is shown with a possibility of a fourth trap level. The density of traps for the first three levels is found to be 5 ×... (Read more)
- 514. J. Appl. Phys. 81, 2208 (1997) , “MeV ion implantation induced damage in relaxed Si1 – xGex”, A. Nylandsted LarsenThe damage produced by implanting, at room temperature, 3-µm-thick relaxed Si1 xGex alloys of high crystalline quality with 2 MeV Si + ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si... (Read more)
- 515. J. Appl. Phys. 81, 2173 (1997) , “Isoconcentration studies of antimony diffusion in silicon”, A. Nylandsted Larsen, P. Kringhøj, J. Lundsgaard Hansen, and S. Yu. ShiryaevThe diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was... (Read more)
- 516. J. Appl. Phys. 81, 1670 (1997) , “Diffusion modeling of zinc implanted into GaAs”, Michael P. Chase, Michael D. Deal, and James D. PlummerThe diffusion of implanted zinc in GaAs is studied and modeled for annealing temperatures of 625 through 850 °C. Secondary ion mass spectrometry data for the annealed profiles are presented. The substitutional interstitial diffusion (SID) mechanism is used to explain how the deviation of the... (Read more)
- 517. J. Appl. Phys. 81, 1645 (1997) , “Origin of infrared bands in neutron-irradiated silicon”, N. V. Sarlis, C. A. Londos, and L. G. FytrosInfrared absorption measurements were made of the localized vibrational modes due to defects produced in Czochralski-grown Si material after irradiation with fast neutrons and subsequent thermal treatments. The investigation was focused, in particular, on three satellite bands in the region of the A... (Read more)
- 518. J. Appl. Phys. 82, 210 (1997) , “Defects in metamorphic InxAl1 – xAs (x < 0.4) epilayers grown on GaAs substrates”, Jia-Lin Shieh, Mao-Nan Chang, Yung-Shih Cheng, and Jen-Inn ChyiDefects in Si-doped InxAl1 xAs (0 < x < 0.4) epilayers on GaAs substrates were systematically investigated by deep-level transient spectroscopy. Three electron traps, ranging from 0.22 to 0.89 eV, were observed in InxAl1... (Read more)
- 519. J. Appl. Phys. 82, 192 (1997) , “Reactivation kinetics of boron acceptors in hydrogenated silicon during zero bias anneal”, Amlan MajumdarThe reactivation kinetics of passivated boron acceptors in hydrogenated silicon during zero bias annealing in the temperature range of 65130 °C are reported. For large annealing times and high annealing temperatures, the reactivation process follows second-order kinetics and is rate... (Read more)
- 520. J. Appl. Phys. 82, 137 (1997) , “The infrared vibrational absorption spectrum of the Si–X defect present in heavily Si doped GaAs”, M. J. Ashwin and R. C. NewmanHeavily silicon doped GaAs grown by molecular beam epitaxy using a single gallium isotope source (69Ga) has been studied by infrared absorption to reveal localized vibrational modes (LVMs) of Si complexes. The structure observed close to 367 cm 1 is the same as that... (Read more)
- 521. J. Appl. Phys. 82, 120 (1997) , “Evolution from point to extended defects in ion implanted silicon”, J. L. Benton, S. Libertino, P. Kringhøj, D. J. Eaglesham, and J. M. PoateWe present a quantitative study of the evolution of point defects into clusters and extended defects in ion-implanted Si. Deep level transient spectroscopy (DLTS) measurements are used to identify and count the electrically active defects in the damaged region produced by Si ion implantation at... (Read more)
- 522. J. Appl. Phys. 82, 899 (1997) , “Persistent photoconductivity in n-type GaN”, H. M. Chen and Y. F. ChenResults of photoconductivity measurements in undoped n-type and Se-doped GaN epitaxial thin films are presented. Similar to the photoluminescence spectra, the photoconductivity also shows a broad yellow band centered around 2.2 eV. It is found that persistent photoconductivity (PPC) does... (Read more)
- 523. J. Appl. Phys. 82, 813 (1997) , “Configurational transformation of an Er center in GaAs:Er,O under hydrostatic pressure”, R. A. Hogg, K. Takahei, and A. TaguchiAn optical spectroscopic study of Er-related luminescence in GaAs:Er,O under hydrostatic pressure is reported. The application of pressure results in new Er-related centers becoming optically active under host photoexcitation. Two new sets of 4I13/2"... (Read more)
- 524. J. Appl. Phys. 82, 688 (1997) , “Defect states in strain-relaxed Si0.7Ge0.3 layers grown at low temperature”, P. M. Mooney, L. Tilly, C. P. D'Emic, J. O. Chu, F. Cardone, F. K. LeGoues, and B. S. MeyersonTwo shallow hole traps dominate the deep level transient spectroscopy (DLTS) data for strain-relaxed Si0.7Ge0.3 layers grown on Si(100) by ultrahigh vacuum chemical vapor deposition at temperatures 560 °C. The trap energy levels are at Ev + 0.06 and... (Read more)
- 525. J. Appl. Phys. 82, 609 (1997) , “Study of damage induced by room-temperature Al ion implantation in Hg0.8Cd0.2Te by x-ray diffuse scattering”, P. O. Renault, A. Declémy, P. Lévêque, and C. FayouxIon-implantation is a widely used doping technique in IIVI semiconductors. Nevertheless, ion-implantation damage has to be better understood to properly control this process. In order to investigate the implantation-induced defects in such compounds, room-temperature implantations of 320 keV... (Read more)
- 526. J. Appl. Phys. 82, 3152 (1997) , “The elastic constants of silicon carbide: A Brillouin-scattering study of 4H and 6H SiC single crystals”, K. Kamitani, M. Grimsditch, J. C. Nipko, and C.-K. LoongThe complete sets of elastic constants of 4H and 6H silicon carbide single crystals were determined by Brillouin scattering. The elastic constants of 6H SiC are C11 = 501 ± 4, C33 = 553 ± 4, C44 = 163 ± 4, C12 =... (Read more)
- 527. J. Appl. Phys. 82, 2603 (1997) , “Electromodulation reflectance of low temperature grown GaAs”, T. M. Hsu, J. W. Sung, and W. C. LeeWe have studied low temperature grown GaAs by electromodulation reflectance spectroscopy for growth temperatures between 200 and 320 °C. The reflectance spectra can be observed only when the concentration of the arsenic antisite defect is lower than 3.4 × 1019 cm ... (Read more)
- 528. J. Appl. Phys. 82, 2476 (1997) , “Electron nuclear double resonance of stable Rh centers in solution-grown NaCl single crystals”, M. Zdravkova, H. Vrielinck, F. Callens, and E. BoesmanUnlike the photographically important silver halides, large NaCl single crystals can be grown from solution. In such NaCl crystals, with doping comparable to practical AgCl and AgBr microcrystals, three stable Rh centers were detected and studied by electron paramagnetic resonance (EPR) and electron... (Read more)
- 529. J. Appl. Phys. 82, 2365 (1997) , “Electrical properties of n-GaSe single crystals doped with chlorine”, G. Micocci, A. Serra, and A. TeporeHall-effect and space-charge-limited-current (SCLC) measurements were performed on Cl-doped GaSe single crystals grown by the BridgmannStockbarger method. The temperature dependence of the free electron density shows the characteristics of a partially compensated n-type semiconductor.... (Read more)
- 530. J. Appl. Phys. 82, 2156 (1997) , “Minority-carrier lifetime damage coefficient of irradiated InP”, B. M. Keyes and R. K. AhrenkielMinority-carrier lifetime damage coefficients for 1 MeV electron, 3 MeV proton, and 6 MeV alpha particle irradiation of n-type (4.5 × 1015 and 1.3 × 1017 cm 3) and p-type (2.5 × 1017 cm 3) InP have... (Read more)
- 531. J. Appl. Phys. 82, 1970 (1997) , “Off-axis extra lines in powder pattern electron paramagnetic resonance of Cr3 + in YAlO3”, R. R. Rakhimov, A. L. Wilkerson, G. B. Loutts, and H. R. RiesPowder sample electron paramagnetic resonance (EPR) spectrum of Cr3 + ions in YAlO3 crystals contains off-axis extra lines, which do not belong to the principal X, Y,and Z components of the fine structure. Orientation dependence of the EPR spectrum of... (Read more)
- 532. J. Appl. Phys. 82, 1812 (1997) , “Atomic level stress and light emission of Ce activated SrS thin films”, W. L. Warren, K. Vanheusden, D. R. Tallant, and C. H. SeagerWe find that the Ce3 + ion in polycrystalline sputtered SrS:Ce thin films resides in a distorted octahedral environment, as opposed to the cubic host environment. Using electron paramagnetic resonance and x-ray diffraction analysis, we show that the degree of axial distortion is related... (Read more)
- 533. J. Appl. Phys. 82, 1696 (1997) , “A study of electrically active defects created in p-InP by CH4:H2 reactive ion etching”, L. Goubert, R. L. Van Meirhaeghe, P. Clauws, F. Cardon, and P. Van DaeleThe electrical effects of reactive ion etching (RIE) of p-InP by CH4:H2 are investigated. By using optical deep-level transient spectroscopy, several deep-level defects could be detected. The main defect (E3) is found to be a donor with an energy level at... (Read more)
- 534. J. Appl. Phys. 82, 1423 (1997) , “Deep level transient spectroscopy of CdS/CdTe thin film solar cells”, M. A. LourençoDeep levels in polycrystalline n-CdS/p-CdTe photovoltaic structures have been studied by deep level transient spectroscopy (DLTS). The results were obtained from cells which have undergone different post-deposition treatment (as-deposited, heat treated, and heat treated in the presence... (Read more)
- 535. J. Appl. Phys. 82, 1208 (1997) , “Carbon-related defects in carbon-doped GaAs by high-temperature annealing”, Hiroshi Fushimi and Kazumi WadaThe behavior of defects in heavily carbon-doped GaAs induced by high-temperature annealing has systematically been studied. It is found that carbon-related defects decrease hole concentration and mobility, carbon concentration on the As sublattices and recombination lifetime, in terms of... (Read more)
- 536. J. Appl. Phys. 82, 1053 (1997) , “Ion-beam annealing of electron traps in n-type Si by post-H + implantation”, A. ItoThe effects of post-H + implantation on electron traps that are induced by P + implantation (300 keV, 1 × 109 cm 2) has been studied by deep-level transient spectroscopy. H + implantation is performed at room temperature to a... (Read more)
- 537. J. Appl. Phys. 82, 5758 (1997) , “Radiation induced formation of color centers in PbWO4 single crystals”, M. Nikl and K. NitschThe changes in the absorption spectra induced by Co60 irradiation and high temperature annealing was studied for selected PbWO4 crystals. Based on radiation and annealings induced absorption spectra, four color centers are proposed, which could be responsible for shaping the... (Read more)
- 538. J. Appl. Phys. 82, 5526 (1997) , “The effect of an asymmetric band of localized deep donors on the electronic transport of high-purity n-type InP”, R. BenzaquenWe have investigated the effect of the shape of a band of localized deep donors on the electronic transport of three high-purity n-type InP epilayers. A model accounting for a broad asymmetric band of localized deep donors or complexes of unknown origin, centered 167 meV below the conduction... (Read more)
- 539. J. Appl. Phys. 82, 5339 (1997) , “Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing”, Hisayoshi Itoh, Takeshi Ohshima, Yasushi Aoki, Koji Abe, Masahito Yoshikawa, and Isamu NashiyamaDefects introduced in epitaxially grown cubic silicon carbide (3C-SiC) by implantation of nitrogen (N2 + " align="middle">) and aluminum ions (Al + ) at a wide temperature range from room temperature to 1200 °C were studied using electron spin resonance (ESR),... (Read more)
- 540. J. Appl. Phys. 82, 5327 (1997) , “Nitrogen and aluminum implantation in high resistivity silicon carbide”, Deborah Dwight and Mulpuri V. RaoIn this article, the results on N and Al implantations into undoped high-resistance and vanadium doped semi-insulating bulk 6H-SiC are reported for the first time. The N implants were performed at 700 °C and the Al implants at 800 °C to create n- and p-type layers,... (Read more)
- 541. J. Appl. Phys. 82, 5185 (1997) , “Harnessing reverse annealing phenomenon for shallow p-n junction formation”, L. Y. Krasnobaev and J. J. CuomoMonocrystalline silicon was implanted with 60 keV fluorine and 20 keV boron ions and annealed. Carrier profile, fluorine and boron redistribution, and the parameters of p+-n junctions were investigated. In ion implanted Si two specific regions were observed in which... (Read more)
- 542. J. Appl. Phys. 82, 5167 (1997) , “p–n and p–n–p junction arrays in CuInSe2 crystals: Cathodoluminescence and capacitance study”, G. A. Medvedkin, M. M. Sobolev, and S. A. SolovjevMicrostructures in p-CuInSe2 single crystals tailored by a strong electric field have been studied using the methods of local cathodoluminescence, electron-beam-induced current (EBIC), capacitancevoltage (CV) characteristics, and deep-level transient... (Read more)
- 543. J. Appl. Phys. 82, 5144 (1997) , “Annealing-induced blue shift in luminescence band from Si-implanted SiO2 layer”, A. D. Lan, B. X. Liu, and X. D. BaiThe SiO2 layers thermally grown on Si wafers were implanted by 130 keV Si ions at liquid nitrogen temperature to a dose of 1 × 1017 ions/cm2. From the as-implanted samples, a visible photoluminescence band centered around 2.0 eV was observed. After... (Read more)
- 544. J. Appl. Phys. 82, 5138 (1997) , “Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices”, W. L. Warren and C. H. SeagerTransmission electron microscopy and x-ray diffraction data show that rapid thermal anneals of SrS:Ce thin films enhance grain size and reduce crystalline defects. Electron paramagnetic resonance results suggest that these anneals lead to less variance in the crystal field environments at the nearly... (Read more)
- 545. J. Appl. Phys. 82, 4994 (1997) , “Optical and electrical characterization of nitrogen ion implanted ZnSSe/p-GaAs (100)”, H. Hong, W. A. Anderson, J. Haetty, A. Petrou, E. H. Lee, H. C. Chang, M. H. Na, H. Luo, J. Peck, and T. J. MountziarisNitrogen ions were implanted into ZnSxSe1 x epilayers grown on p-GaAs (100) substrates by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD). Dopant activation and annealing out the implant damage were achieved by a... (Read more)
- 546. J. Appl. Phys. 82, 4945 (1997) , “Hydrogen-oxygen-vacancy complexes in Czochralski-grown silicon crystal”, H. Hatakeyama and M. SuezawaWe studied the process of generation and some properties of shallow donors generated by annealing a hydrogen-doped Czochralski-grown silicon crystal after electron irradiation. Hydrogen was doped by annealing specimens at 1200 °C in hydrogen atmosphere followed by quenching. Specimens were... (Read more)
- 547. J. Appl. Phys. 82, 4457 (1997) , “4f-shell configuration of Yb in InP studied by electron spin resonance”, T. Ishiyama and K. MurakamiWe have performed electron spin resonance (ESR) measurements on Yb-doped n-type and p-type InP layers epitaxially grown by metalorganic chemical vapor deposition. ESR spectra of Yb3 + (4f13) were observed in both n-type and p-type samples.... (Read more)
- 548. J. Appl. Phys. 82, 4412 (1997) , “Deep electron states in n-type Al-doped ZnS1 – xTex grown by molecular beam epitaxy”, Liwu Lu, Weikun Ge, I. K. Sou, Y. Wang, J. Wang, Z. H. Ma, W. S. Chen, and G. K. L. WongCapacitancevoltage, photoluminescence (PL), and deep level transient spectroscopy techniques were used to investigate deep electron states in n-type Al-doped ZnS1 xTex epilayers grown by molecular beam epitaxy. The integrated intensity of the... (Read more)
- 549. J. Appl. Phys. 82, 4408 (1997) , “Electrical properties of silicon and beryllium doped (AlyGa1 – y)0.52In0.48P”, Stephen P. Najda, Alistair Kean, and Geoffrey DugganThe electrical properties of silicon and beryllium doped (AlyGa1 y)0.52In0.48P grown by gas source molecular beam epitaxy were studied. Unintentionally doped (GaIn)P has a n-type background concentration of 5.1 ×... (Read more)
- 550. J. Appl. Phys. 82, 4236 (1997) , “Investigation of the x-ray storage phosphors Cs2NaYF6:Pr3 + or Ce3 + ”, Th. Pawlik and J.-M. SpaethWe present Cs2NaYF6:Ce3 + or Pr3 + as new x-ray storage phosphors. The radiation damage centers upon x irradiation were investigated using magneto-optical and magnetic resonance spectroscopy. F centers are the photostimulable electron trap centers. For... (Read more)
- 551. J. Appl. Phys. 82, 4223 (1997) , “Compensation implants in 6H–SiC”, Andrew Edwards, Deborah N. Dwight, and Mulpuri V. RaoIn this work, we have performed Si and C isoelectronic implantations in n-type and vanadium (V) implantations in p-type 6HSiC to obtain highly resistive regions. The compensation is achieved by the lattice damage created by the Si and C implantations and the chemically... (Read more)
- 552. J. Appl. Phys. 82, 4124 (1997) , “Detection of the metastable state of the EL2 defect in GaAs”, J. C. Bourgoin and T. NeffatiUsing a classical photocapacitance technique, we have transformed the well-known EL2 defects, related to the As antisite in GaAs, into their metastable states. Using the capacitance, we have monitored the temperature dependence of the electron occupancy of these metastable states at thermal... (Read more)
- 553. J. Appl. Phys. 82, 3828 (1997) , “Deep level of iron-hydrogen complex in silicon”, T. Sadoh, K. Tsukamoto, A. Baba, D. Bai, A. Kenjo, and T. TsurushimaDeep levels related to iron in n-type silicon have been investigated using thermally stimulated capacitance (TSCAP) combined with minority carrier injection. The TSCAP measurement reveals two traps of EV + 0.31 and EV + 0.41 eV. The trap of... (Read more)
- 554. J. Appl. Phys. 82, 3791 (1997) , “Hydrogen migration in diamond-like carbon films”, E. Vainonen, J. Likonen, T. Ahlgren, P. Haussalo, and J. KeinonenProperties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H + and 4He + ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the... (Read more)
- 555. J. Appl. Phys. 82, 3630 (1997) , “Addendum: Deep emission band at GaInP/GaAs interface”, S. H. Kwok and P. Y. YuWe have performed high pressure photoluminescence studies of the deep emission band in GaInP/GaAs quantum well. Our results suggest that this peak is related to donor-acceptor pair transitions in the GaAs well. ©1997 American Institute of Physics.... (Read more)
- 556. J. Appl. Phys. 82, 3346 (1997) , “The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs”, M. I. N. da Silva, A. G. de Oliveira, G. M. Ribeiro, R. M. Rubinger, J. A. Corrêa, and M. V. Baeta MoreiraThrough photo-Hall measurements at temperatures below about 120 K, we have observed the presence of a deep donor defect, with characteristics similar to those of the EL2 center, in planar-doped GaAs samples grown by molecular beam epitaxy at 300 °C. We have shown that this EL2-like center can... (Read more)
- 557. J. Appl. Phys. 82, 3232 (1997) , “Vacancy production by 3 MeV electron irradiation in 6H-SiC studied by positron lifetime spectroscopy”, Atsuo Kawasuso, Hisayoshi Itoh, Takeshi Ohshima, Koji Abe, and Sohei OkadaThe vacancy production in 6H-SiC by 3 MeV electron irradiation at room temperature was studied using positron lifetime spectroscopy combined with annealing experiments. It was found that the trapping rates of positrons in vacancies increased linearly with the fluence in the initial stage of... (Read more)
- 558. J. Appl. Phys. 82, 3125 (1997) , “The potential formation of O2 - " align="middle"> on an oxidizing porous silicon surface a source of oxygen atoms”, James L. Gole and Frank P. DudelEvidence is presented for the formation of O2 - " align="middle"> on a porous silicon surface. The O2 - " align="middle"> present on a porous silicon surface may contribute to the infrared spectrum of air oxidized surfaces in the range encompassing ~ 11001150... (Read more)
- 559. J. Appl. Phys. 82, 2969 (1997) , “Properties of electron traps in In1 – xGaxAsyP1 – y grown on GaAs0.61P0.39”, Ho Ki Kwon and Byung-Doo ChoeThe properties of electron traps in nominally undoped In1 xGaxAsyP1 y layers grown on GaAs0.61P0.39 substrates by liquid phase epitaxy were investigated by deep level transient spectroscopy... (Read more)
- 560. J. Appl. Phys. 83, 738 (1998) , “Defect formation and annealing behavior of InP implanted by low-energy 15N ions”, E. Rauhala, T. Ahlgren, K. Väkeväinen, J. Räisänen, and J. KeinonenDefect formation has been studied in nitrogen-implanted IIIV compound semiconductor material InP. Sulphur-doped n-type (100) InP samples were implanted at room temperature with 30 keV 15N + ion doses of 10141016 N atoms... (Read more)
- 561. J. Appl. Phys. 83, 718 (1998) , “Amphoteric native defect reactions in Si-doped GaAs”, Nguyen Hong KyStrong evidence for amphoteric native defect reactions is obtained by photoluminescence analysis of Si-doped GaAs samples (n1.5 × 1018 cm 3) annealed under different conditions. Annealing in excess As4 vapor creates a large concentration of Ga... (Read more)
- 562. J. Appl. Phys. 83, 71 (1998) , “Study of defects in electron irradiated CuInSe2 by positron lifetime spectroscopy”, A. Polity, R. Krause-Rehberg, and T. E. M. StaabCuInSe2 was studied in the as-grown state and after low-temperature (4 K) 2 MeV electron irradiation. The positron bulk lifetime of 235 ps was measured for the unirradiated sample. The positron bulk lifetime was theoretically calculated and is in good agreement with the experimental... (Read more)
- 563. J. Appl. Phys. 83, 561 (1998) , “Effects of the growth temperature and As/Ga flux ratio on the incorporation of excess As into low temperature grown GaAs”, M. Luysberg, H. Sohn, A. Prasad, P. Specht, Z. Liliental-Weber, and E. R. WeberThe controlled incorporation of excess As into GaAs grown by molecular beam epitaxy at low growth temperatures (LT-GaAs) is explored. The substrate temperature and the As/Ga flux ratio were systematically varied to investigate the influence of growth parameters on the formation of native defects and... (Read more)
- 564. J. Appl. Phys. 83, 56 (1998) , “The variation of microstructure in Czochralski silicon induced by low-high two step anneal”, C. Y. Kung, C. M. Liu, and W. HsuSystematic low-high two-step and high-low-high three-step annealing studies were conducted to investigate the microdefects generated in Czochralski silicon wafers. It was found that cluster precipitates entangled with dislocations are annihilated during extended low temperature anneal. A model... (Read more)
- 565. J. Appl. Phys. 83, 349 (1998) , “Hydrogenation and annealing behaviors of deep levels in strained CdTe(111)/GaAs(100) heterostructures”, M. D. KimPhoto-induced-current transient spectroscopy measurements on CdTe/GaAs strained heterostructures grown by molecular beam epitaxy were carried out to investigate the hydrogenation and the annealing behaviors of the deep levels due to the crystal defects. The six hole-traps of the as-grown CdTe... (Read more)
- 566. J. Appl. Phys. 83, 260 (1998) , “Effect of high-temperature annealing on electrical and optical properties of undoped semi-insulating GaAs”, Z.-Q. Fang, D. C. Reynolds, and D. C. LookA comprehensive characterization, including room temperature Hall effect, near infrared absorption, temperature dependent dark current and photocurrent (using 1.13 eV light), normalized thermally stimulated current (NTSC), photoluminescence at 4.2 K in both near band edge and deep level regions, and... (Read more)
- 567. J. Appl. Phys. 83, 1496 (1998) , “Growth mode-related generation of electron traps at the inverted AlAs/GaAs interface”, P. Krispin, R. Hey, H. Kostial, and K. H. PloogDiscrete electronic states at the inverted AlAs/GaAs interface grown by molecular beam epitaxy are identified by deep-level transient spectroscopy and capacitance-voltage measurements. The formation of two deep traps at the inverted AlAs/GaAs interface is shown to be related to the AlAs growth mode.... (Read more)
- 568. J. Appl. Phys. 83, 1327 (1998) , “Open-tube solid-state diffusion of Zn into n-type GaAs0.35P0.65 from ZnO oxide films and electroluminescence”, Choon Bae ParkA thermal annealing method was utilized in the diffusion process of Zn in the formation of the p-type layer on GaAs0.35P0.65 films. The thermal diffusion of Zn from the ZnO source film on the n-type substrate provides for the formation of a p-type layer and... (Read more)
- 569. J. Appl. Phys. 83, 120 (1998) , “Implantation species dependence of transient enhanced diffusion in silicon”, Masashi UematsuThe dependence of transient enhanced diffusion (TED) on implantation species has been investigated by the simulation of TED induced by P, As, and Si implantation using a unified set of parameters. The TED enhancement at short annealing times critically depends on the effective diffusivities of... (Read more)
- 570. J. Appl. Phys. 82, 6346 (1997) , “Hydrogen passivation of nitrogen in 6H–SiC”, B. TheysN-doped 6HSiC wafers have been annealed in hot hydrogen for two doping levels, corresponding to n- (n ~ 1017 cm 3) and n+-type (n ~ 1019 cm 3) material. Electron spin resonance shows little... (Read more)
- 571. J. Appl. Phys. 83, 4206 (1998) , “Temperature and injection dependence of the Shockley–Read–Hall lifetime in electron-irradiated p-type silicon”, Niclas Keskitalo, Per Jonsson, Kenneth Nordgren, Henry Bleichner, and Edvard NordlanderThe ShockleyReadHall (SRH) carrier lifetime in electron-irradiated low-doped p-type silicon was measured at different injection levels and various temperatures. The lifetime under high-level injection was determined using the open-circuit carrier decay technique. The reverse... (Read more)
- 572. J. Appl. Phys. 83, 4106 (1998) , “Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon”, D. Bisero, F. Corni, S. Frabboni, R. Tonini, and G. OttavianiThe growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV 4He + Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission... (Read more)
- 573. J. Appl. Phys. 83, 4069 (1998) , “Deep levels and minority carrier lifetime in proton irradiated silicon pin diode”, T. Sasaki, J. Nishizawa, and M. EsashiDeep levels induced by MeV-proton irradiation in n(ν) region of Si p-ν-n diodes were investigated by photocapacitance method under constant capacitance condition. Electrical property, dosage dependence, spatial distribution, and annealing behavior of the... (Read more)
- 574. J. Appl. Phys. 83, 3649 (1998) , “Observation of near-surface electrically active defects in n-type 6H–SiC”, J. P. Doyle, A. Schöner, N. Nordell, A. Galeckas, H. Bleichner, M. K. Linnarsson,, J. Linnros, and B. G. SvenssonIn n-type 6HSiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 × 1013 cm 3, a region near the front... (Read more)
- 575. J. Appl. Phys. 83, 3609 (1998) , “Photoluminescence study of defects in Si + ion implanted thermal SiO2 films”, Jia-Yu Zhang, Xi-Mao Bao, Neng-Sheng Li, and Hai-Zhi SongPoint defects and structure damages in Si-implanted thermal SiO2 films were examined by photoluminescence (PL) spectra, electron spin resonance spectra, and infrared absorption spectra. Under ~ 5 eV excitation, the as-implanted film had two PL bands peaked at 4.3 and 2.4 eV, respectively.... (Read more)
- 576. J. Appl. Phys. 83, 2988 (1998) , “Hydrogen–oxygen interaction in silicon at around 50 °C”, V. P. Markevich and M. SuezawaFormation kinetics of oxygenhydrogen (OH) complexes which give rise to an infrared absorption line at 1075.1 cm 1 have been studied in Czochralski-grown silicon crystals in the temperature range of 30150 °C. Hydrogen was incorporated into the crystals by high... (Read more)
- 577. J. Appl. Phys. 83, 2366 (1998) , “Deep levels in heavily Zn-doped InP layers implanted with Ti and Ti/P”, Sang Kee Si, Sung June Kim, Youngboo Moon, and Euijoon YoonWe have investigated deep level peaks observed in the photoluminescence spectrum of heavily Zn-doped InP layers grown by metalorganic chemical vapor deposition at energies centered at 0.89 and 0.94 eV. These peaks are enhanced when the samples are implanted with Ti. When P is co-implanted, however,... (Read more)
- 578. J. Appl. Phys. 83, 2357 (1998) , “Concentration of neutral oxygen vacancies in buried oxide formed by implantation of oxygen”, Kwang Soo Seol, Tsuyoshi Futami, and Yoshimichi OhkiUsing synchrotron radiation as a photon source, photoluminescence spectra were obtained for buried oxide formed by implantation of oxygen. From the spectra, the oxide was known to have relaxed and unrelaxed neutral oxygen vacancies with respective concentrations of 1.4 × 1020 and ... (Read more)
- 579. J. Appl. Phys. 83, 2272 (1998) , “Magnesium acceptor levels in GaN studied by photoluminescence”, A. Kasi Viswanath, Eun-joo Shin, Joo In Lee, Sungkyu Yu, and Dongho KimMagnesium doped GaN epitaxial layers were grown by metal-organic chemical vapor deposition on sapphire substrate. Energy levels of these acceptors were investigated by systematic photoluminescence measurements in the temperature range of 12300 K. Magnesium concentration was varied from < 1... (Read more)
- 580. J. Appl. Phys. 83, 2121 (1998) , “Deep energy levels in CdTe and CdZnTe”, A. Castaldini, A. Cavallini, and B. FraboniThe deep levels present in semiconducting CdTe and semi-insulating CdTe:Cl and Cd0.8Zn0.2Te have been investigated by means of cathodoluminescence, deep level transient spectroscopy (DLTS), photo-induced current transient spectroscopy, and photo-DLTS. The latter two methods,... (Read more)
- 581. J. Appl. Phys. 83, 2014 (1998) , “Amphoteric behavior of Sn in In0.5Ga0.5P layers grown by liquid phase epitaxy”, I. T. Yoon, S. J. Oh, and H. L. ParkSn-doped In0.5Ga0.5P epilayers, grown on semi-insulating (100) GaAs substrates by the liquid phase epitaxy technique, have been investigated using photoluminescence and Hall effect measurements from 15 to 300 K. The Sn dopant in InGaP shows amphoteric behavior with a... (Read more)
- 582. J. Appl. Phys. 83, 1958 (1998) , “Optical absorption study of Si grown in a hydrogen ambient”, Masashi SuezawaWe studied optical absorption spectra of Si crystals grown in a hydrogen ambient. Specimens were grown by the floating-zone growth method in a hydrogen ambient of 1 atm. Optical absorption spectra of those specimens were measured at 6 K. Many optical absorption lines were observed in the range of... (Read more)
- 583. J. Appl. Phys. 83, 1945 (1998) , “Transmission electron microscopy and cathodoluminescence studies of extended defects in electron-beam-pumped Zn1 – xCdxSe/ZnSe blue-green lasers”, Jean-Marc Bonard and Jean-Daniel GanièreWe report on studies of extended defects in electron-beam-pumped Zn1 xCdxSe/ZnSe blue and blue-green laser structures. To establish a direct correlation between the local luminescence properties and the presence of structural defects, the same thin foil... (Read more)
- 584. Appl. Phys. Lett. 92, 142105 (2008) , “Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC”, J. Wong-Leung and B. G. SvenssonHigh-purity and low-doped n-type epitaxial layers of 4H-SiC have been implanted with N and C ions by using energies in the MeV range and doses from 2×108 to 1×109 cm−2. Postimplant annealing was performed at 1100 °C prior to... (Read more)
- 585. J. Appl. Phys. 83, 6182 (1998) , “Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model”, S. B. Herner, H.-J. Gossmann, L. P. Pelaz, G. H. Gilmer, M. Jaraíz, D. C. Jacobson, and D. J. EagleshamBoron in silicon doping superlattices is used to trace native point defect behavior during a 790 °C, 15 min anneal following a 200 keV, 1 × 1013/cm2 Pb + or 40 keV 1 × 1013/cm2 Si + implant. These nonamorphizing... (Read more)
- 586. J. Appl. Phys. 83, 5576 (1998) , “A deep level transient spectroscopy characterization of defects induced in epitaxially grown n-Si by low-energy He-ion bombardment”, F. D. Auret, P. N. K. Deenapanray, S. A. Goodman, W. E. Meyer, and G. MyburgEpitaxially grown n-Si was bombarded with low-energy (1 keV) He ions. Deep level transient spectroscopy revealed that this introduced four prominent defects with energy levels at 0.14, 0.20, 0.30, and 0.55 eV, respectively, below the conduction band. The electronic properties and annealing... (Read more)
- 587. J. Appl. Phys. 83, 5447 (1998) , “On the optical band gap of zinc oxide”, V. Srikant and D. R. ClarkeThree different values (3.1, 3.2, and 3.3 eV) have been reported for the optical band gap of zinc oxide single crystals at room temperature. By comparing the optical properties of ZnO crystals using a variety of optical techniques it is concluded that the room temperature band gap is 3.3 eV and that... (Read more)
- 588. J. Appl. Phys. 83, 5394 (1998) , “The photoluminescence in Si + -implanted SiO2 films with rapid thermal anneal”, Shu-Tsun ChouTwo photoluminescence (PL) bands were observed from Si + -implanted SiO2 films after rapid thermal anneal (RTA) at = " align="bottom">950 °C. The PL band at 2.2 eV was obtained from the films with RTA in dry nitrogen and the other one at 1.9 eV was obtained from the films... (Read more)
- 589. J. Appl. Phys. 83, 5159 (1998) , “Residual defects in low energy and low dose antimony ion-implanted silicon”, F. UesugiThe residual defects in medium energy (40 keV) and low dose (5.0 × 1014/cm2) Sb ion-implanted Si after annealing at 1000 °C for 10 and 30 min have been investigated by several advanced transmission electron microscopy techniques and secondary ion mass spectroscopy.... (Read more)
- 590. J. Appl. Phys. 84, 870 (1998) , “Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy”, A. Y. PolyakovDeep traps in undoped n-GaN layers grown by organometallic vapor phase epitaxy on sapphire substrates were studied by temperature dependent conductivity, photoinduced current transient spectroscopy (PICTS), thermally stimulated current, electron beam induced current (EBIC), and band edge... (Read more)
- 591. J. Appl. Phys. 84, 704 (1998) , “Capture cross sections of electron irradiation induced defects in 6H–SiC”, C. Hemmingsson, N. T. Son, O. Kordina, and E. JanzénAn investigation of electron irradiation induced deep levels in 6HSiC p+n diodes grown by chemical vapor deposition has been performed. Deep level transient spectroscopy (DLTS) reveals several overlapping peaks in the temperature range 140650 K. The electron... (Read more)
- 592. J. Appl. Phys. 84, 428 (1998) , “Electron spin resonance of rhodium-vacancy complexes in solution-grown NaCl crystals”, H. Vercammen, D. Schoemaker, H. Käss, E. Goovaerts, and A. BouwenThree different paramagnetic [RhCl6]4 complexes were detected in x-ray irradiated solution-grown NaCl single crystals: RhCl64-" align="middle"> · nVac, n = 2, 1, 0. These complexes all have a 4d7 ground state, with the... (Read more)
- 593. J. Appl. Phys. 84, 422 (1998) , “Electron nuclear double resonance of a nearly axial Rh2+ center in solution-grown NaCl crystals”, F. Callens, H. Vrielinck, and P. MatthysRh3 + -doped NaCl single crystals grown from aqueous solution were studied with electron paramagnetic resonance and electron nuclear double resonance after irradiation at liquid nitrogen temperature. [RhCl6]4 complexes with two next-nearest neighbor charge... (Read more)
- 594. J. Appl. Phys. 84, 335 (1998) , “Properties of interface states at Ta2O5/n-Si interfaces”, S. K. ZhangProperties of interface states at Ta2O5/n-Si interfaces are studied by capacitancevoltage and deep-level transient spectroscopy (DLTS) measurements. The results show that the "slow" states at Ta2O5/n-Si interfaces are not... (Read more)
- 595. J. Appl. Phys. 84, 2963 (1998) , “Absorption coefficient of 4H silicon carbide from 3900 to 3250 Å”, S. G. Sridhara, R. P. Devaty, and W. J. ChoykeWe report the values of the absorption coefficient of 4H SiC at room temperature, in the wavelength range from 3900 to 3350 Å and at 3250 Å. By using the known shift in the band gap with temperature, we also present an estimate of the absorption coefficient of 4H SiC at 2 K.... (Read more)
- 596. J. Appl. Phys. 84, 2943 (1998) , “Reliability of metal–oxide–semiconductor capacitors on nitrogen implanted 4H-silicon carbide”, M. Treu and E. P. Burte4H-SiC epitaxial layers were implanted with nitrogen up to doses of 1 × 1015 cm 2 and annealed at different temperatures. Atomic force microscopy revealed that the roughness of the SiC surface increased with the annealing temperature. It was shown that the... (Read more)
- 597. J. Appl. Phys. 84, 2255 (1998) , “Determination of the defect depth profile after saw cutting of GaAs wafers measured by positron annihilation”, F. Börner, S. Eichler, A. Polity, and R. Krause-RehbergPositron lifetime measurements and Doppler broadening spectroscopy using slow positrons were combined to investigate open-volume defects created by sawing wafers from GaAs ingots by a diamond saw cutter. It was found during step-by-step polishing that the depth distribution represents a wedgelike... (Read more)
- 598. J. Appl. Phys. 84, 2040 (1998) , “Analysis of deep traps in hexagonal molecular beam epitaxy-grown GaN by admittance spectroscopy”, A. Krtschil, H. Witte, M. Lisker, and J. ChristenNominally undoped GaN layers grown by molecular beam epitaxy (MBE) and having resistivities between 105 and 107 were investigated with temperature- and frequency-dependent admittance spectroscopy. The advantage of these measurement methods is shown in terms of the formation of... (Read more)
- 599. J. Appl. Phys. 84, 2030 (1998) , “Reactivation kinetics of the Cu and Fe hole traps in hydrogenated p-type GaAs”, C. Radue, A. B. Conibear, and C. A. B. BallDeep level transient spectroscopy has been used to investigate hydrogen passivated p-type GaAs. Annealing studies have shown reactivation of the passivated CuB and Fe2+/3 + defects under differing bias conditions. The dissociation energies and dissociation... (Read more)
- 600. J. Appl. Phys. 84, 1973 (1998) , “Electrical characterization of He-plasma processed n-GaAs”, F. D. Auret, W. E. Meyer, P. N. K. Deenapanray, S. A. Goodman, and G. MyburgWe employed capacitance-voltage (CV) measurements to determine the free-carrier concentration changes in n-GaAs after processing it in a He plasma, and deep-level transient spectroscopy (DLTS) to study the electrical properties of the plasma-induced defects.... (Read more)
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