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- 401. Mater. Sci. Eng. R 33, 135-207 (2001) , “Comprehensive characterization of hydride VPE grown GaN layers and templates”, H. MorkoçGaN community has recently recognized that it is imperative that the extended, and point defects in GaN and related materials, and the mechanisms for their formation are understood. This is a first and an important step, which must be followed by defect reduction before full implementation of this... (Read more)
- 402. phys. stat. sol. (b) 210, 13 (1999) , “Neutral Vacancies in Group-IV Semiconductors”, A. Zywietz, J. Furthmüller, F. BechstedtAb initio plane-wave-supercell calculations are performed for the neutral monovacancies in silicon, silicon carbide and diamond using ultrasoft non-normconserving Vanderbilt pseudopotentials. We study the structure, the energetics and the single-particle energy spectrum. The local symmetry, the... (Read more)
- 403. Phys. Rev. B 43, 6569 (1991) , “Optically detected magnetic resonance of dislocations in silicon”, V. Kveder, P. Omling, H. G. Grimmeiss, Yu. A. OsipyanThe observation of optically detected magnetic resonance (ODMR) signals directly correlated with dislocations in silicon is reported. The ODMR signals are identified as resonances from free electrons, dangling bonds, and quasifree holes bound to a one-dimensional potential in straight dislocations.... (Read more)
- 404. Phys. Rev. B 51, 16721 (1995) , “Electronic states associated with dislocations in p-type silicon studied by means of electric-dipole spin resonance and Deep-Level Transient Spectroscopy”, V. Kveder, T. Sekiguchi, K. Sumino.Dislocation loops consisting of long and straight segments of 60° and screw parts were introduced in p-type Si by deformation under a high stress at a relatively low temperature. Electronic states associated with such dislocations were investigated by means of electric-dipole spin resonance, with... (Read more)
- 405. Solid State Commun. 73, 393 (1990) , “Electron paramagnetic resonance of nickel in silicon. — I. Identification of spectrum”, L. S. Vlasenko, N. T. Son, A. B. van Oosten, C. A. J. Ammerlaan, A. A. Lebedev, E. S. Taptygov, V. A. KhramtsovResults are reported on the paramagnetic resonance spectrum recently identified with the negatively charged state of substitutional nickel in n-type silicon. Studies were made on the presence of the spectrum in silicon with different concentrations of phosphorus doping and under various conditions... (Read more)
- 406. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 407. Phys. Rev. B 75, 245202 (2007) , “Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC”, T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. GaliAn antisite-vacancy pair and a monovacancy are a set of fundamental stable and/or metastable defects in compound semiconductors. Theory predicted that carbon antisite-vacancy pairs would be much more stable in p-type SiC than silicon vacancies and that they would be a common defect. However,... (Read more)
- 408. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 409. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 410. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 411. Phys. Rev. B 69, 045201 (2004) , “Hydrogenation of the dominant interstitial defect in irradiated boron-doped silicon”, N. Yarykin, O. V. Feklisova, and J. WeberThe H3-center with a level at Ev + 0.535 eV is observed in hydrogenated electron-irradiated boron-doped silicon. In samples with boron concentrations of (220)×1015 cm3 the center is the most abundant among all defects detected by... (Read more)
- 412. Phys. Rev. B 69, 035210 (2004) , “Evolution of voids in Al+-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaUndoped ZnO single crystals were implanted with aluminum ions up to a dose of 1015Al+/cm2. Vacancy defects in the implanted layers were detected using positron lifetime and Doppler broadening measurements with slow positron beams. It shows that vacancy clusters,... (Read more)
- 413. Phys. Rev. B 69, 193202 (2004) , “Optical and electrical properties of vanadium and erbium in 4H-SiC”, D. Prezzi, T. A. G. Eberlein, J.-S. Filhol, R. Jones, M. J. Shaw, P. R. Briddon, and S. ÖbergLocal-density-functional calculations are carried out on vanadium and erbium centers in 4H-SiC. Particular attention is paid to their electrical and optical properties. We find that both V and Er lie at Si sites and can exist in three charge states with deep donor and acceptor levels. While... (Read more)
- 414. Phys. Rev. B 69, 165215 (2004) , “Boron-hydrogen complexes in diamond”, J. P. Goss, P. R. Briddon, S. J. Sque, and R. JonesBoron in diamond traps hydrogen forming passive Bs-H pairs. Boron trapping two deuterium atoms has been speculated as forming a shallow donor (0.230.34 eV below the conduction band). We present the results of first-principles calculations of boron complexes with 24... (Read more)
- 415. Phys. Rev. B 69, 165206 (2004) , “Structural and vibrational properties of {N,N} pairs and {N,H} complexes in Si”, J. L. McAfee, He Ren, and S. K. EstreicherFirst-principles molecular-dynamics simulations are used to predict the structures and binding energies of interstitial nitrogen Ni, substitutional nitrogen Ns, the Ni-self-interstitial complex, the {Ni,Ni}, {Ni,Ns} =... (Read more)
- 416. Phys. Rev. B 69, 155206 (2004) , “Structure, energetics, and extrinsic levels of small self-interstitial clusters in silicon”, Giorgia M. Lopez and Vincenzo FiorentiniNative defects in Si are of obvious importance in microelectronic device processing. Self-interstitials in particular are known to mediate, in many cases, anomalous impurity diffusion. Here we study the energetics and electronic structure of single, double, and triple self-interstitial clusters in... (Read more)
- 417. Phys. Rev. B 69, 153202 (2004) , “Divacancy annealing in Si: Influence of hydrogen”, E. V. Monakhov, A. Ulyashin, G. Alfieri, A. Yu. Kuznetsov, B. S. Avset, and B. G. SvenssonWe have performed comparative studies of divacancy (V2) annealing in hydrogenated and nonhydrogenated Si by deep level transient spectroscopy. It is shown that the nonhydrogenated samples demonstrate the formation of divacancy-oxygen (V2O) complex during annealing of... (Read more)
- 418. Phys. Rev. B 69, 125218 (2004) , “Structure and properties of vacancy-oxygen complexes in Si1–xGex alloys”, V. P. Markevich, A. R. Peaker, J. Coutinho, R. Jones, V. J. B. Torres, S. Öberg, P. R. Briddon, L. I. Murin, L. Dobaczewski, and N. V. AbrosimovThe electronic properties and structure of vacancy-oxygen (VO) complexes in Czochralski-grown Si1xGex crystals (0<x<0.06) have been studied by means of capacitance transient techniques and ab initio modeling. At least three configurations... (Read more)
- 419. Phys. Rev. B 69, 125217 (2004) , “Occupation site change of self-interstitials and group-III acceptors in Si crystals: Dopant dependence of the Watkins replacement efficiency”, Y. Tokuyama, M. Suezawa, N. Fukata, T. Taishi, and K. HoshikawaWe studied the dependence of the Watkins replacement efficiency on the species of group-III impurities from the measurement of the concentration of IH2, a complex of one self-interstitial (I) and two H atoms. If the IH2 concentration depends on species of... (Read more)
- 420. Phys. Rev. B 69, 125214 (2004) , “Spectroscopic evidence for a N-Ga vacancy defect in GaAs”, H. Ch. Alt, Y. V. Gomeniuk, and B. WiedemannA local vibrational mode occurring at 638 cm1 in nitrogen-rich GaAs bulk crystals and 14N-implanted GaAs layers has been investigated by high-resolution Fourier transform infrared absorption spectroscopy. Measurements on samples coimplanted with 14N and... (Read more)
- 421. Phys. Rev. B 69, 125210 (2004) , “Dissociation of H-related defect complexes in Mg-doped GaN”, O. Gelhausen, M. R. Phillips, E. M. Goldys, T. Paskova, B. Monemar, M. Strassburg, and A. HoffmannPost-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The 3.27 eV donor-acceptor pair (DAP) emission line that dominates the emission spectrum in moderately... (Read more)
- 422. Phys. Rev. B 69, 115212 (2004) , “Defects produced in ZnO by 2.5-MeV electron irradiation at 4.2 K: Study by optical detection of electron paramagnetic resonance”, Yu. V. Gorelkinskii and G. D. WatkinsThe effect of 2.5 MeV electron irradiation in situ at 4.2 K on the properties of single crystalline ZnO is studied by photoluminescence (PL) and optically detected electron paramagnetic resonance (ODEPR). A new PL band is produced by the irradiation, and several annealing stages are observed... (Read more)
- 423. Phys. Rev. B 69, 115205 (2004) , “Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si”, V. Ranki, A. Pelli, and K. SaarinenPositron annihilation experiments have been performed to identify defects created by annealing of electron irradiated of heavily As-, P-, and Sb-doped Si samples. We show that the vacancy-donor pairs (V-D1) migrate around 450 K, transforming into... (Read more)
- 424. Phys. Rev. B 69, 075210 (2004) , “Isoelectronic oxygen-related defect in CdTe crystals investigated using thermoelectric effect spectroscopy”, Salah A. Awadalla, Alan W. Hunt, Kelvin G. Lynn, Howard Glass, Csaba Szeles, and Su-Huai WeiAn oxygen-related defect was studied in nominally undoped CdTe crystals grown by the high pressure Bridgman technique using thermo-electrical effect spectroscopy and first-principles band structure calculations. Based on the linear relationship between the oxygen concentration and the emitted charge... (Read more)
- 425. Phys. Rev. B 70, 035203 (2004) , “High-resolution local vibrational mode spectroscopy and electron paramagnetic resonance study of the oxygen-vacancy complex in irradiated germanium”, P. Vanmeerbeek, P. Clauws, H. Vrielinck, B. Pajot, L. Van Hoorebeke, and A. Nylandsted LarsenIt was recently discovered that in electron-irradiated germanium doped with oxygen a local vibrational mode occurs at 669 cm1 that could be ascribed to the negatively charged oxygen-vacancy complex (VO). In the 669 cm1 band and in another... (Read more)
- 426. Phys. Rev. B 70, 033204 (2004) , “Electron-spin phase relaxation of phosphorus donors in nuclear-spin-enriched silicon”, Eisuke Abe, Kohei M. Itoh, Junichi Isoya, and Satoshi YamasakiWe report a pulsed electron paramagnetic resonance study of the phase relaxation of electron spins bound to phosphorus donors in isotopically purified 29Si and natural abundance Si (natSi) single crystals measured at 8 K. The two-pulse echo decay curves for both samples show... (Read more)
- 427. Phys. Rev. B 70, 024105 (2004) , “X- and Q-band ENDOR study of the Fe+(II) center in chlorinated SrCl2:Fe crystals”, D. Ghica, S. V. Nistor, H. Vrielinck, F. Callens, and D. SchoemakerThe 001 axially symmetric Fe+(II) center observed in SrCl2:Fe2+ crystals has been studied by the electron nuclear double resonance (ENDOR) technique in the microwave X and Q bands. This center is produced only in crystals grown in chlorine atmosphere... (Read more)
- 428. Phys. Rev. B 69, 245207 (2004) , “Donor level of bond-center hydrogen in germanium”, L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. P. MarkevichWe apply Laplace deep-level transient spectroscopy (LDLTS) in situ after low-temperature proton implantation into crystalline n-type germanium and identify a deep metastable donor center. The activation energy of the donor emission is ~110 meV when extrapolated to zero electric field.... (Read more)
- 429. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. GelardiWe report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in β-ray irradiated and... (Read more)
- 430. Phys. Rev. B 70, 144111 (2004) , “Identification of Cr3+ centers in Cs2NaAlF6 and Cs2NaGaF6 crystals by EPR and ENDOR paramagnetic resonance techniques”, H. Vrielinck, F. Loncke, F. Callens, P. Matthys, and N. M. KhaidukovChromium-doped Cs2NaAlF6 and Cs2NaGaF6 crystals have been investigated by using the techniques of electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) at X-band (9.5 GHz) and Q-band (34 GHz) frequencies. In both... (Read more)
- 431. Phys. Rev. B 70, 121201(R) (2004) , “Identification of Ga-interstitial defects in GaNyP1–y and AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuTwo Ga-interstitial (Gai) defects are identified by optically detected magnetic resonance as common grown-in defects in molecular beam epitaxial GaNyP1y and... (Read more)
- 432. Phys. Rev. B 70, 115210 (2004) , “Possible p-type doping with group-I elements in ZnO”, Eun-Cheol Lee and K. J. ChangBased on first-principles calculations, we suggest a method for fabricating p-type ZnO with group-I elements such as Li and Na. With group-I dopants alone, substitutional acceptors are mostly self-compensated by interstitial donors. In ZnO codoped with H impurities, the formation of... (Read more)
- 433. Phys. Rev. B 70, 115206 (2004) , “Optically detected magnetic resonance of epitaxial nitrogen-doped ZnO”, G. N. Aliev, S. J. Bingham, D. Wolverson, J. J. Davies, H. Makino, H. J. Ko, and T. YaoOptically detected magnetic resonance (ODMR) experiments on epitaxial nitrogen-doped ZnO show spectra due to (i) a shallow donor with the full wurtzite symmetry, (ii) a previously unobserved spin-1/2 center of axial symmetry whose principal axis is tilted slightly away from the crystal c... (Read more)
- 434. Phys. Rev. B 71, 125210 (2005) , “Optical detection of electron paramagnetic resonance in room-temperature electron-irradiated ZnO”, L. S. Vlasenko and G. D. WatkinsThe dominant defect observed in the photoluminescence (PL) of room-temperature electron-irradiated ZnO by optical detection of electron paramagnetic resonance (ODEPR) is determined to be the positively charged oxygen vacancy (VO+" align="middle">). Its spectrum, labeled L3,... (Read more)
- 435. Phys. Rev. B 71, 115213 (2005) , “Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam”, Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. OhdairaZnO crystals were implanted with 2080 keV hydrogen ions up to a total dose of 4.4×1015 cm2. Positron lifetime and Doppler broadening of annihilation radiation measurements show introduction of zinc vacancy-related defects after implantation. These vacancies... (Read more)
- 436. Phys. Rev. B 71, 075421 (2005) , “N-type electric conductivity of nitrogen-doped ultrananocrystalline diamond films”, Ying Dai, Dadi Dai, Cuixia Yan, Baibiao Huang, and Shenghao HanThe electronic structures of several possible nitrogen-related centers on the diamond surface and in the diamond grain-boundary have been studied using density functional theory approaches with cluster models. The results indicate that the nitrogen-vacancy related complex may be the shallow donor... (Read more)
- 437. Phys. Rev. B 71, 035205 (2005) , “Dominant hydrogen-oxygen complex in hydrothermally grown ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberA hydrogen-related defect labeled as H-I*, observed in as-grown hydrothermal ZnO, is studied by means of infrared absorption spectroscopy. The defect possesses a stretch local vibrational mode at 3577.3 cm1 that is associated with a single hydrogen atom bound to oxygen with the O-H... (Read more)
- 438. Phys. Rev. B 70, 235208 (2004) , “Interstitial nitrogen and its complexes in diamond”, J. P. Goss, P. R. Briddon, S. Papagiannidis, and R. JonesNitrogen, a common impurity in diamond, can be displaced into an interstitial location by irradiation. The resultant interstitial defects are believed to be responsible for a range of infrared and electronic transitions that vary in thermal stability, and on the type of diamond. Of particular... (Read more)
- 439. Phys. Rev. B 70, 205214 (2004) , “Evidence of a sulfur-boron-hydrogen complex in GaAs grown by the liquid encapsulation Czochralski technique”, W. Ulrici and B. ClerjaudIn LEC-grown GaAs:S, two vibrational absorption lines are measured at 2382.2 and 2392.8 cm1 (T = 7 K) and assigned to 11B-H and 10B-H stretching modes. Uniaxial stress experiments reveal that the symmetry of the responsible complex is... (Read more)
- 440. Phys. Rev. B 70, 205211 (2004) , “Ni-vacancy defect in diamond detected by electron spin resonance”, K. IakoubovskiiTrigonal S = 1 NOL1/NIRIM5 center has been characterized by electron spin resonance (ESR) in nickel and boron doped diamond grown by the high-pressure high-temperature technique. Hyperfine interaction structure has been detected and attributed to six equivalent carbon sites and one Ni site.... (Read more)
- 441. Phys. Rev. B 70, 205203 (2004) , “Properties and formation mechanism of tetrainterstitial agglomerates in hydrogen-doped silicon”, Teimuraz Mchedlidze and Masashi SuesawaFor the tetrainterstitial agglomerate (I4), four additional silicon (Si) atoms are incorporated in an ordinary unit cell of Si lattice in such a manner that all atoms are four-coordinated and angles between bonds are not disturbed significantly. Microstructure, electrical... (Read more)
- 442. Phys. Rev. B 70, 205201 (2004) , “Interaction of hydrogen with boron, phosphorus, and sulfur in diamond”, E. B. Lombardi, Alison Mainwood, and K. OsuchThe production of n-type doped diamond has proved very difficult. Phosphorus, and possibly sulfur, when in substitutional sites in the lattice, forms a donor which could be used in electronic devices. Boron, which is a relatively shallow acceptor, can be passivated by hydrogen, and it is... (Read more)
- 443. Phys. Rev. B 71, 205212 (2005) , “Theoretical study of cation-related point defects in ZnGeP2”, Xiaoshu Jiang, M. S. Miao, and Walter R. L. LambrechtFirst-principles calculations are presented for the VZn and VGe cation vacancies and the ZnGe and GeZn antisites in ZnGeP2, using full-potential linearized muffin-tin orbital method supercell calculations in the local-density... (Read more)
- 444. Phys. Rev. B 71, 195201 (2005) , “Local modes of bond-centered hydrogen in Si:Ge and Ge:Si”, R. N. Pereira, B. Bech Nielsen, L. Dobaczewski, A. R. Peaker, and N. V. AbrosimovLocal vibrational modes of bond-centered hydrogen have been identified in Ge-doped Si (Si:Ge) and Si-doped Ge (Ge:Si) with in-situ-type infrared absorption spectroscopy. The infrared absorbance spectra recorded at 8 K immediately after implantation of the very dilute Si:Ge and Ge:Si alloys... (Read more)
- 445. Phys. Rev. B 71, 165211 (2005) , “Theory of boron-vacancy complexes in silicon”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe substitutional boron-vacancy BsV complex in silicon is investigated using the local density functional theory. These theoretical results give an explanation of the experimentally reported, well established metastability of the boron-related defect observed in p-type... (Read more)
- 446. Phys. Rev. B 71, 125209 (2005) , “Properties of Ga-interstitial defects in AlxGa1–xNyP1–y”, N. Q. Thinh, I. P. Vorona, I. A. Buyanova, W. M. Chen, Sukit Limpijumnong, S. B. Zhang, Y. G. Hong, H. P. Xin, C. W. Tu, A. Utsumi, Y. Furukawa, S. Moon, A. Wakahara, and H. YonezuA detailed account of the experimental results from optically detected magnetic resonance (ODMR) studies of grown-in defects in (Al)GaNP alloys, prepared by molecular beam epitaxy, is presented. The experimental procedure and an in-depth analysis by a spin Hamiltonian lead to the identification of... (Read more)
- 447. Phys. Rev. B 72, 073205 (2005) , “Electronic behavior of rare-earth dopants in AlN: A density-functional study”, S. Petit, R. Jones, M. J. Shaw, P. R. Briddon, B. Hourahine, and T. FrauenheimLocal density functional calculations are carried out on Er, Eu, and Tm rare-earth (RE) dopants in hexagonal AlN. We find that the isolated impurities prefer to substitute for Al and, in contrast with isolated RE dopants in GaAs and GaN, REAl defects are electrically active and introduce... (Read more)
- 448. Phys. Rev. B 72, 035214 (2005) , “Vacancy-impurity complexes and limitations for implantation doping of diamond”, J. P. Goss, P. R. Briddon, M. J. Rayson, S. J. Sque, and R. JonesMany candidates have been proposed as shallow donors in diamond, but the small lattice constant means that many substitutional impurities generate large strains and thus yield low solubilities. Strained impurities favor complex formation with other defects and, in particular, the lattice vacancy. We... (Read more)
- 449. Phys. Rev. B 72, 035203 (2005) , “Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K”, L. S. Vlasenko and G. D. WatkinsIntrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K are studied by optical detection of electron paramagnetic resonance (ODEPR). Observed in the photoluminescence (PL) are ODEPR signals, which are identified with the oxygen vacancy, VO+"... (Read more)
- 450. Phys. Rev. B 72, 033202 (2005) , “Electron-nuclear double-resonance study of Mn2+ ions in ZnGeP2 crystals”, N. Y. Garces, L. E. Halliburton, P. G. Schunemann, and S. D. SetzlerElectron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) have been used to characterize isolated Mn2+ (3d5) ions in a bulk ZnGeP2 crystal grown by the horizontal Bridgman technique. From the EPR data, we obtain... (Read more)
- 451. Phys. Rev. B 72, 014115 (2005) , “Lattice sites of implanted Fe in Si”, U. Wahl, J. G. Correia, E. Rita, J. P. Araújo, J. C. Soares, and The ISOLDE CollaborationThe angular distribution of β particles emitted by the radioactive isotope 59Fe was monitored following implantation into Si single crystals at fluences from 1.4×1012 cm2 to 1×1014 cm2. We... (Read more)
- 452. Phys. Rev. B 71, 241201(R) (2005) , “Ionization energies of phosphorus and nitrogen donors and aluminum acceptors in 4H silicon carbide from the donor-acceptor pair emission”, I. G. Ivanov, A. Henry, and E. JanzénThis paper deals with fitting the donor-acceptor pair luminescence due to P-Al pairs in 4H-SiC. It was possible to identify P at the Si cubic site as the shallower donor with ionization energy of 60.7 meV, as well as to distinguish the contribution in the spectrum from pairs involving this... (Read more)
- 453. Phys. Rev. B 71, 233201 (2005) , “Evidence for vacancy-interstitial pairs in Ib-type diamond”, Konstantin Iakoubovskii, Steen Dannefaer, and Andre StesmansDiamonds containing nitrogen in different forms have been irradiated by 3MeV electrons or 60Co gamma photons and characterized by optical absorption (OA) and electron spin resonance (ESR). An unusually low production rate of vacancies (V) and interstitials (I) was... (Read more)
- 454. Phys. Rev. B 72, 085213 (2005) , “First-principles study of the structure and stability of oxygen defects in zinc oxide”, Paul Erhart, Andreas Klein, and Karsten AlbeA comparative study on the structure and stability of oxygen defects in ZnO is presented. By means of first-principles calculations based on local density functional theory we investigate the oxygen vacancy and different interstitial configurations of oxygen in various charge states. Our results... (Read more)
- 455. Phys. Rev. B 72, 085212 (2005) , “Photoconductivity and infrared absorption study of hydrogen-related shallow donors in ZnO”, E. V. Lavrov, F. Börrnert, and J. WeberVapor phase grown ZnO samples treated with hydrogen and/or deuterium plasma were studied by means of photoconductivity and infrared (IR) absorption spectroscopy. Three bands at 180, 240, and 310 cm1 were observed in the photoconductivity spectra of hydrogenated ZnO. These are... (Read more)
- 456. Phys. Rev. B 72, 085208 (2005) , “Capacitance transient study of the metastable M center in n-type 4H-SiC”, H. Kortegaard Nielsen, A. Hallén, and B. G. SvenssonThe metastable M center in n-type 4H silicon carbide is studied in detail after it has been introduced by 2.5 MeV proton irradiation with a fluence of 1×1012 cm2. The experimental procedures included deep-level transient spectroscopy, carrier... (Read more)
- 457. Phys. Rev. B 72, 085206 (2005) , “Introduction and recovery of point defects in electron-irradiated ZnO”, F. Tuomisto, K. Saarinen, D. C. Look, and G. C. FarlowWe have used positron annihilation spectroscopy to study the introduction and recovery of point defects in electron-irradiated n-type ZnO. The irradiation (Eel=2 MeV, fluence 6×1017cm2) was performed at room temperature, and isochronal... (Read more)
- 458. Phys. Rev. B 73, 024117 (2006) , “Defect properties and p-type doping efficiency in phosphorus-doped ZnO”, Woo-Jin Lee, Joongoo Kang, and K. J. ChangBased on first-principles pseudopotential calculations, we investigated the electronic structure of various P-related defects in ZnO and the p-type doping efficiency for two forms of P dopant sources such as P2O5 and Zn3P2. As compared to N dopants,... (Read more)
- 459. Phys. Rev. B 72, 245209 (2005) , “Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms”, N. Fukata, S. Fukuda, S. Sato, K. Ishioka, M. Kitajima, T. Hishita, and K. MurakamiThe formation of hydrogen (H) related complexes and their effect on boron (B) dopant were investigated in B-ion implanted and annealed silicon (Si) substrates treated with a high concentration of H. Isotope shifts by replacement of 10B with 11B were observed for some H-related... (Read more)
- 460. Phys. Rev. B 72, 235205 (2005) , “Passivation of copper in silicon by hydrogen”, C. D. Latham, M. Alatalo, R. M. Nieminen, R. Jones, S. Öberg, and P. R. BriddonThe structures and energies of model defects consisting of copper and hydrogen in silicon are calculated using the AIMPRO local-spin-density functional method. For isolated copper atoms, the lowest energy location is at the interstitial site with Td symmetry. Substitutional... (Read more)
- 461. Phys. Rev. B 72, 195211 (2005) , “Hydrogen local modes and shallow donors in ZnO”, G. Alvin Shi, Michael Stavola, S. J. Pearton, M. Thieme, E. V. Lavrov, and J. WeberThe annealing behavior of the free-carrier absorption, O-H vibrational absorption, and photoluminescence lines previously associated with H-related donors in ZnO has been studied. One set of H-related defects gives rise to O-H local vibrational mode absorption at either 3326 or 3611 ... (Read more)
- 462. Phys. Rev. B 72, 195207 (2005) , “Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity silicon”, M. Mikelsen, E. V. Monakhov, G. Alfieri, B. S. Avset, and B. G. SvenssonIn this work the thermal kinetics of the transformation from the divacancy (V2) to the divacancy-oxygen (V2O) complex has been studied in detail, and activation energies, (Ea), have been obtained. Diffusion oxygenated float-zone silicon (DOFZ-Si)... (Read more)
- 463. Phys. Rev. B 72, 153201 (2005) , “Interstitial H2 in germanium by Raman scattering and ab initio calculations”, M. Hiller, E. V. Lavrov, J. Weber, B. Hourahine, R. Jones, and P. R. BriddonSingle-crystalline germanium wafers exposed to hydrogen and/or deuterium plasma are studied by means of Raman scattering. The Raman frequencies are compared to results of ab initio calculations. For samples treated with pure hydrogen, Raman measurements performed at a temperature of 80 K... (Read more)
- 464. Phys. Rev. B 72, 121201(R) (2005) , “*Cu0: A metastable configuration of the {Cus,Cui} pair in Si”, S. K. Estreicher, D. West, and M. SanatiFirst-principles theory shows that the substitutional-interstitial copper pair in Si (Si-CusCui) has a metastable state with Cui very near a tetrahedral interstitial site in a trigonal Cus-SiCui configuration... (Read more)
- 465. Phys. Rev. B 72, 115323 (2005) , “Defects in SiO2 as the possible origin of near interface traps in the SiC/SiO2 system: A systematic theoretical study”, J. M. Knaup, P. Deák, Th. Frauenheim, A. Gali, Z. Hajnal, and W. J. ChoykeA systematic study of the level positions of intrinsic and carbon defects in SiO2 is presented, based on density functional calculations with a hybrid functional in an α-quartz supercell. The results are analyzed from the point of view of the near interface traps (NIT), observed in... (Read more)
- 466. Phys. Rev. B 73, 125203 (2006) , “Origin of brown coloration in diamond”, L. S. Hounsome, R. Jones, P. M. Martineau, D. Fisher, M. J. Shaw, P. R. Briddon, and S. ÖbergMeasurements of the absorption spectra of brown natural type IIa diamond as well as brown nitrogen-doped CVD diamond are reported. These are largely featureless and increase almost monotonically from about 15.5 eV. It is argued that the brown coloration is due to an extended defect and not to... (Read more)
- 467. Phys. Rev. B 73, 085204 (2006) , “Theory of boron aggregates in diamond: First-principles calculations”, J. P. Goss and P. R. BriddonIt is well known that nitrogen forms aggregates in diamond. However, little is known regarding aggregation of boron, an impurity that can be incorporated in very high concentrations. In this paper we present the results of first-principles calculations regarding the structure and properties of... (Read more)
- 468. Phys. Rev. B 73, 081203(R) (2006) , “Muonium in InSb: Shallow acceptor versus deep trap or recombination center”, V. G. Storchak, D. G. Eshchenko, J. H. Brewer, S. P. Cottrell, and R. L. LichtiThe bound state of a muonium atom has been detected in both n-type and p-type InSb using a high-field µSR technique. The hyperfine constant obtained for this isotropic center (AT=2464±1 MHz), roughly half that of a Mu atom in vacuum, is... (Read more)
- 469. Phys. Rev. B 73, 045208 (2006) , “Characterization of Eδ and triplet point defects in oxygen-deficient amorphous silicon dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of γ-ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (Eγ, Eδ, and triplet) and one... (Read more)
- 470. J. Appl. Phys. 94, 3115 (2003) , American Institute of Physics , “Characteristics of deep levels associated with rhodium impurity in n-type GaAs”, M. Zafar Iqbal, A. Majid, Shah Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. Bimberg.,Deep levels have been characterized in n-type GaAs crystalline films grown by metalorganic chemical vapor deposition, doped in situ with 4d transition metal, rhodium, using the deep level transient spectroscopy (DLTS) technique. Two prominent broad bands of deep levels are found... (Read more)
- 471. J. Appl. Phys. 98, 083709 (2005) , American Institute of Physics , “Osmium impurity-related deep levels in n-type GaAs”, A. Majid, M. Zafar Iqbal, A. Dadgar and D. BimbergThe 5d transition-metal impurity, osmium, has been incorporated during the growth of n-type GaAs epitaxial layers using low-pressure metal-organic chemical-vapor deposition to characterize defect states associated with this heavy and, therefore, thermally stable dopant impurity.... (Read more)
- 472. Phys. Rev. B 73, 134112 (2006) , “EPR g-tensor of paramagnetic centers in yttria-stabilized zirconia from first-principles calculations”, F. Pietrucci, M. Bernasconi, C. Di Valentin, F. Mauri, and C. J. PickardIn order to assign the defect responsible for the experimental electron paramagnetic resonance (EPR) signal with trigonal symmetry (T center), we have studied the properties of different paramagnetic centers in yttria-stabilized cubic zirconia by computing the EPR g-tensor from density... (Read more)
- 473. J. Appl. Phys. 103, 073716 (2008) , “Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGe/Si heterostructures”, Jinggang Lu, Yongkook Park, and George A. RozgonyiThree SiGe/Si heterostructures with different Ge contents have been examined by deep level transient spectroscopy (DLTS) and capacitance-voltage techniques. DLTS revealed a broad band of traps from 80 to 250 K in the as-grown samples. Arrhenius plots of a 25% SiGe sample revealed three trap... (Read more)
- 474. J. Appl. Phys. 81, 905 (1997) , “Photoluminescence of undoped bulk InP grown by the liquid-encapsulated vertical Bridgman technique”, Junyong KangThe 4.2 K photoluminescence (PL) spectra of undoped bulk 100" align="middle"> InP grown by the liquid-encapsulated vertical Bridgman (LEVB) techniques are characterized by three kinds of recombination peaks. A peak exhibited near band-gap energy is attributed to the recombination of bound... (Read more)
- 475. J. Appl. Phys. 81, 78 (1997) , “Size-distribution and annealing behavior of end-of-range dislocation loops in silicon-implanted silicon”, G. Z. Pan and K. N. TuA study of end-of-range (EOR) dislocation loops in silicon implanted with 50 keV 1016 Si/cm2 was carried out by using transmission electron microscopy. Two kinds of post-implantation anneals were performed, furnace anneals at 850 °C and rapid thermal anneals at 1000 °C.... (Read more)
- 476. J. Appl. Phys. 81, 631 (1997) , “A predictive model for transient enhanced diffusion based on evolution of {311} defects”, Alp H. Gencer and Scott T. DunhamIt has been observed that {311} defects form, grow, and eventually dissolve during annealing of Si-implanted silicon wafers. The fact that for subamorphizing silicon implants {311} defects initially contain the full net dose of excess interstitials, and that the time scale for dissolution of these... (Read more)
- 477. J. Appl. Phys. 81, 264 (1997) , “P and N compensation in diamond molecular orbital theory”, Alfred B. Anderson and Lubomir N. KostadinovCluster models and the atom superposition and electron delocalization molecular orbital theory calculations lead to an explanation for the ability of nitrogen to cause phosphorous incorporation in low pressure grown diamond films as observed recently by Cao and coworkers. The theory shows that... (Read more)
- 478. J. Appl. Phys. 81, 260 (1997) , “Electrically active defects in as-implanted, deep buried layers in p-type silicon”, P. K. Giri, S. Dhar, V. N. Kulkarni, and Y. N. MohapatraWe have studied electrically active defects in buried layers, produced by heavy ion implantation in silicon, using both conventional deep level transient spectroscopy (DLTS) and an isothermal spectroscopic technique called time analyzed transient spectroscopy operated in constant capacitance mode... (Read more)
- 479. J. Appl. Phys. 81, 146 (1997) , “Phase formation and stability of N + implanted SiC thin films”, R. CapellettiSilicon carbide amorphous thin films have been bombarded with 100 keV N ions. Infrared-absorption spectroscopy has been used to study the effect of increasing ion doses, up to 5 × 1017 N + cm 2, on the evolution of chemical bonding between Si, C, and N.... (Read more)
- 480. J. Appl. Phys. 81, 1180 (1997) , “Electronic defect levels in relaxed, epitaxial p-type Si1 – xGex layers produced by MeV proton irradiation”, E. V. Monakhov, A. Nylandsted Larsen, and P. KringhøjProton-irradiation-induced electronic defects in relaxed, epitaxial p-type Si1 xGex layers grown by molecular-beam epitaxy have been investigated by deep level transient spectroscopy (DLTS) for 0x0.25. Three dominating lines in the DLTS... (Read more)
- 481. J. Appl. Phys. 81, 107 (1997) , “A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon”, Jingwei XuTransient enhanced diffusion (TED) results from implantation damage creating enhanced diffusion of dopants in silicon. This phenomenon has mostly been studied using boron marker layers. We have performed an experiment using boron, phosphorus, and dislocation markers to compare TED effects. This... (Read more)
- 482. Phys. Rev. B 73, 165212 (2006) , “Identification of donor-related impurities in ZnO using photoluminescence and radiotracer techniques”, Karl Johnston, Martin O. Henry, Deirdre McCabe, Enda McGlynn, Marc Dietrich, Eduardo Alves, and Matthew XiaThe results of photoluminescence measurements on ZnO implanted with stable and radioactive isotopes of Zn and Ga are presented. The donor-related exciton feature I8 at 3.3600 eV is suggested to be due to bound exciton recombination at Ga donors. The I1 line at... (Read more)
- 483. Phys. Rev. B 73, 165209 (2006) , “Vacancy-impurity pairs in relaxed Si1–xGex layers studied by positron annihilation spectroscopy”, M. Rummukainen, J. Slotte, K. Saarinen, H. H. Radamson, J. Hållstedt, and A. Yu. KuznetsovPositron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be... (Read more)
- 484. Phys. Rev. B 73, 165202 (2006) , “Radiation damage in silicon exposed to high-energy protons”, Gordon Davies, Shusaku Hayama, Leonid Murin, Reinhard Krause-Rehberg, Vladimir Bondarenko, Asmita Sengupta, Cinzia Davia, and Anna KarpenkoPhotoluminescence, infrared absorption, positron annihilation, and deep-level transient spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 GeV/c protons in crystalline silicon. The irradiation doses and the concentrations of carbon and oxygen in the samples... (Read more)
- 485. J. Appl. Phys. 81, 1929 (1997) , “Effects of microwave fields on recombination processes in 4H and 6H SiC”, N. T. Son, E. Sörman, W. M. Chen, J. P. Bergman, C. Hallin, O. Kordina, A. O. Konstantinov, B. Monemar, and E. JanzénThe effects of microwave fields on recombination processes, which are responsible for the optical detection of cyclotron resonance (ODCR) in 4H and 6H SiC epitaxial layers, have been investigated. We present experimental evidence indicating that the dominant mechanism of ODCR in SiC, at low... (Read more)
- 486. J. Appl. Phys. 81, 1877 (1997) , “Crystal-field splitting of Er + 3 in Si”, Shang Yuan RenTwo photoluminescent defects associated with Er + 3-doped Si are (i) a high-temperature defect (which appears after annealing at ~ 900 °C and produces five photoluminescence lines), and (ii) a low-temperature defect (which is created at lower annealing temperatures in addition to the... (Read more)
- 487. J. Appl. Phys. 82, 419 (1997) , “Red luminescence in phosphorous-doped chemically vapor deposited diamond”, J. te Nijenhuis, S. M. Olsthoorn, W. J. P. van Enckevort, and L. J. GilingLuminescence studies have been performed on phosphorous-doped diamond films deposited by hot-filament chemical vapor deposition. A broad luminescence band, centered around 1.9 eV is revealed, in the cathodo luminescence spectra of homoepitaxial and polycrystalline films, whereas the blue... (Read more)
- 488. J. Appl. Phys. 81, 7612 (1997) , “Passivation, structural modification, and etching of amorphous silicon in hydrogen plasmas”, S. A. McQuaid, S. Holgado, J. Garrido, J. Martínez, and J. PiquerasAtomic hydrogen from plasma discharges dissolves in silicon previously amorphized by ion implantation (aSi) in the form of SiH bonds, giving rise to infrared (IR) absorption at ~ 1990 cm 1 and causing partial activation of implanted dopants. Passivation of aSi... (Read more)
- 489. J. Appl. Phys. 81, 7604 (1997) , “Conductivity conversion of lightly Fe-doped InP induced by thermal annealing: A method for semi-insulating material production”, R. Fornari, A. Zappettini, E. Gombia, and R. MoscaAs-grown Fe-doped semiconducting InP wafers (residual carrier concentration 1015 cm3, estimated iron concentration 58 × 1015 cm3) were converted to semi-insulating, with high resistivity and good mobility, when annealed under... (Read more)
- 490. J. Appl. Phys. 81, 7567 (1997) , “Effect of the carbon acceptor concentration on the photoquenching and following enhancement of the photoacoustic signals of semi-insulating GaAs”, A. Fukuyama, Y. Morooka, Y. Akashi, K. Yoshino, K. Maeda, and T. IkariThe spectral and the time dependent piezoelectric photoacoustic (PPA) measurements under the continuous light illumination were carried out at 85 K to investigate nonradiative recombination processes involving EL2 defect levels in carbon concentration controlled and not intentionally doped... (Read more)
- 491. J. Appl. Phys. 81, 7533 (1997) , “Broad photoluminescence band in undoped AlxGa1 – xAs grown by organometallic vapor phase epitaxy”, H. Kakinuma and M. AkiyamaWe have studied the 77 K photoluminescence (PL) of undoped-AlxGa1 xAs (0.21x0.83) grown by organometallic vapor phase epitaxy. A deep broad (DB) PL band is found at 1.61.7 eV at a range of x from 0.21 to 0.63, with a maximum intensity at... (Read more)
- 492. J. Appl. Phys. 81, 7362 (1997) , “Interface states in In0.5Ga0.5P/AlxGa1 – xAs heterostructures grown by liquid phase epitaxy”, Yong-Hoon Cho and Byung-Doo ChoeWe report the observation of deep traps localized near the heterointerface of the InGaP/AlGaAs structure grown by liquid-phase epitaxy. In the case of low-quality InGaP/AlGaAs heterojunctions containing interface traps, the shape of capacitance-voltage (C-V) carrier profiles is affected by... (Read more)
- 493. J. Appl. Phys. 81, 7295 (1997) , “Structures and defects in arsenic-ion-implanted GaAs films annealed at high temperatures”, Wen-Chung Chen and C.-S. ChangThe structures and defects are studied in arsenic-ion-implanted GaAs(As + GaAs) films annealed at temperatures higher than 600 °C by using transmission electron microscopy, deep level transient spectroscopy, temperature-dependent conductance, and photoluminescence. The estimated... (Read more)
- 494. J. Appl. Phys. 81, 6948 (1997) , “Optical properties of α-irradiated and annealed Si-doped GaAs”, H. W. Kunert and D. J. BrinkThe influence of irradiation by α particles and subsequent isochronal annealing on n-GaAs doped with silicon, was investigated. Photoluminescence (PL) studies revealed the formation of an induced radiation center at 1.486 eV. In addition to the PL investigation we also employed... (Read more)
- 495. J. Appl. Phys. 81, 6822 (1997) , “A model of hole trapping in SiO2 films on silicon”, P. M. LenahanWe demonstrate that hole trap densities and hole trapping in SiO2 films on silicon can be predicted quantitatively using a physically based model of intrinsic oxide trapping centers. ©1997 American Institute of Physics.... (Read more)
- 496. J. Appl. Phys. 81, 6767 (1997) , “Optical deep level transient spectroscopy of minority carrier traps in n-type high-purity germanium”, A. Blondeel and P. ClauwsDeep levels in n-type high-purity (HP) detector grade germanium are studied using optical deep level transient spectroscopy (ODLTS). In this technique, optical injection (using light of above band gap energy) from the back ohmic contact together with a suitable sample configuration results in... (Read more)
- 497. J. Appl. Phys. 81, 6651 (1997) , “Neutron irradiation defects in gallium sulfide: Optical absorption measurements”, F. J. Manjón, A. Segura, and V. MuñozGallium sulfide single crystals have been irradiated with different thermal neutron doses. Defects introduced by neutron irradiation turn out to be optically active, giving rise to absorption bands with energies ranging from 1.2 to 3.2 eV. Bands lying in the band-gap exhibit Gaussian shape. Their... (Read more)
- 498. J. Appl. Phys. 81, 6635 (1997) , “Phosphorus and boron implantation in 6H–SiC”, Mulpuri V. Rao and Jason A. GardnerPhosphorus and boron ion implantations were performed at various energies in the 50 keV4 MeV range. Range statistics of P + and B + were established by analyzing the as-implanted secondary ion mass spectrometry depth profiles. Anneals were conducted in the temperature... (Read more)
- 499. J. Appl. Phys. 81, 6205 (1997) , “Electrical and photoluminescence properties of CuInSe2 single crystals”, J. H. Schön, E. Arushanov, Ch. Kloc, and E. BucherElectrical and photoluminescence measurements have been carried out on CuInSe2 single crystals. The observed temperature dependence of the Hall coefficient in n-type CuInSe2 single crystals is explained in assuming the existence of an impurity band. The values of the... (Read more)
- 500. J. Appl. Phys. 81, 6200 (1997) , “Trapping centres in Cl-doped GaSe single crystals”, G. Micocci, A. Serra, and A. TeporeThermally stimulated current (TSC) and photoconductivity were studied as a function of temperature and light intensity in an n-GaSe single crystal doped with chlorine. TSC measurements were performed in the range 80450 K, and the results were analyzed by different methods. An electron... (Read more)
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