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- 301. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 302. phys. stat. sol. (b) 90, 301 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress II..Linewidth and Crystal Defects”, H. Neubrand.Observations of the ESR lineshape of the shallow acceptor centre B in silicon at zero external stress are reported. The broadening of two ∆M = 1 transitions can be well fitted by a Voigt profile. The Lorentzian part of the fit is shown to behave in full accordance with the theory of strain... (Read more)
- 303. phys. stat. sol. (b) 86, 269 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress I.. Line Positions and Line Structure”, H. Neubrand.ESR observations at zero external stress of the shallow acceptor centre boron in silicon are reported for the first time. These observations have become possible by the high degree of crystal perfection attainable today in Si-crystal growth. The spectrum, its angular and uniaxial pressure dependence... (Read more)
- 304. Solid State Commun. 25, 987 (1978) , “EPR Spectra of Heat-Treatment Centers in Oxygen-Rich Silicon”, S. H. Muller, M. Sprenger, E. G. Sieverts and C. A. J. AmmerlaanAfter heat-treatment of oxygen-rich silicon at 410–550 °C ten different EPR spectra were observed. Nine of these are new spectra, seven of them reveal 2mm symmetry for the corresponding heat-treatment center, thereby reducing considerably the number of possible atomic configurations. In... (Read more)
- 305. phys. stat. sol. (b) 85, 525 (1978) , “EPR of Lithium in Mechanically Affected Silicon”, M. Höhne.An intense narrow EPR spectrum is observed at 20 and 1.5 K in lithium doped silicon, which has been mechanically affected. The spectrum exhibits an angular dependent, only partly resolved structure. The spectra at the different temperatures can be explained by assuming lithium donors in rhombic... (Read more)
- 306. Solid State Commun. 27, 867 (1978) , “Localization of the Fe0-Level in Silicon”, H. Feichtinger, J. Waltl and A. GschwandtnerSilicon samples were quenched from 1250°C – 1300°C and the 95K Fermi level was calculated from Hall effect data. The same samples were used to determine the intensity of the EPR spectrum at 95K associated with the iron interstitial (Fe°). In carefully selected samples, complete or... (Read more)
- 307. phys. stat. sol. (a) 39, 11 (1977) , “Photoelectric Spectroscopy - A New Method of Analysis of Impurities in Semiconductors”, Sh. M. Kogan, T. M. Lifshits1. Introduction 2. The photothermal ionization of impurities in semiconductors 3. The excitation energies of impurities in germanium and silicon 4. The analysis of impurities in crystals 4.1 Germanium 4.2 Silicon 4.3 Gallium arsenide 4.4... (Read more)
- 308. phys. stat. sol. (a) 41, 637 (1977) , “EPR of a Carbon-Oxygen-Divacancy Complex in Irradiated Silicon”, Y. H. Lee, J. W. Corbett, K. L. Brower.Additional EPR experiments on the Si-G15 spectrum, previously observed in p-type, pulled silicon after electron irradiation, are described. The hyperfine interaction with the 29Si nuclei and the quenched-in defect alignment under uniaxial stress are newly observed. A correlation is made... (Read more)
- 309. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 310. Sov. Phys. Solid State 18, 190 (1976) , “EPR of Phosphorus in Silicon”, P. Swarup, P. L. Trivedi.Experimental values of the exchange integral are presented for phosphorus-doped silicon, at various phosphorus concentration, and are compared with the theory. It is shown that the observed temperature dependence of the EPR linewidth in these samples can be attributed to a phonon-induced admixture of excited states to the ground state of the impurity center. The proposed mechanism is compared with the mechanism of dynamic narrowing due to hopping. We have analyzed the EPR spectra of silicon single crystals doped with phosphorus in the concentration range from 2・1017 to 2・1018 cm-3, at temperatures from 2º to 20ºK.1 It was observed that the EPR line of phosphorus has a Lorentz shape at all concentrations and temperatures. Estimates of the exchange integrals at various impurity concentrations were obtained from the experimental data on the EPR linewidth. It is shown that the temperature dependence of the linewidth confirms the conclusion that an admixture of excited orbital states of the impurity centers to the ground state is induced by the phonons and that the exchange integral depends on temperature. The proposed mechanism is compared with the mechanism of dynamic narow connected with hopping.2
- 311. J. Appl. Phys. 104, 093711 (2008) , “Electrical properties of high energy ion irradiated 4H-SiC Schottky diodes”, G. Izzo, G. Litrico, L. Calcagno, G. Foti, and F. La ViaThe changes in the electrical properties of 4H-SiC epitaxial layer induced by irradiation with 7.0 MeV C+ ions were investigated by current-voltage measurements and deep level transient spectroscopy (DLTS). Current-voltage characteristics of the diodes fabricated from epilayers... (Read more)
- 312. J. Appl. Phys. 104, 093521 (2008) , “Native defects and oxygen and hydrogen-related defect complexes in CdTe: Density functional calculations”, Mao-Hua Du, Hiroyuki Takenaka, and David J. SinghWe study structural and electronic properties of various intrinsic and extrinsic defects in CdTe based on first-principles calculations. The focus is given to the role of these defects in the carrier compensation in semi-insulating CdTe, which is essential for the CdTe-based radiation detectors. The... (Read more)
- 313. Solid-State Electronics 19, 611 (1976) , “Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon”, Kenji Miyata and C. T. SahThe thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are... (Read more)
- 314. Radiat. Eff. 29, 7 (1976) , “Photo-EPR Experiments on Defects in Irradiated Silicon”, Y. H. Lee, T. D. Bilash, J. W. Corbett.The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec -0.40 eV and Ev +0.40 eV.
- 315. Sov. Phys. Semicond. 10, 1339 (1976) , “Radiation Damage in Silicon Resulting from Complete Stopping of 30 MeV Protons”, Yu. V. Gorelkinski?, V. O. Sigle, V. A. Botvin.The ESR method was usedin a study of radiation defects created in single-crystal silicon by 30 MeV protons. The distribution of the paramagnetic centers was determined as a function of the proton energy between 30 and ~10 MeV. It was established that in this range of energies the rates of introduction of centers with high (~10 keV) and low (~100 eV) threshold energies of formation were independent of the proton energy. The structure of the radiation damage was determined by investigating the ESR spectra of samples with high phosphorus concentrations (~1017-1018 cm-3) after irradiation with various proton doses. For comparison, measurements were made also on silicon samples irradiated with fast reactor neutrons. The probabilities of formation of disordered regions by recoil nuclei of energies exceeding ~10 keV were approximately equal in the proton (30 MeV) and neutron irradiation cases. However, when silicon was bombarded with protons, about 80% of the divacancies (Si-G7 centers) formfed were located outside the disordered regions.
- 316. Solid State Commun. 20, 881 (1976) , “ESR in Iron Doped Silicon Crystals under Stress”, M. Berke, E. Weber and H. AlexanderH. Luft and B. ElschnerThe spin lattice coefficients C11 and C44 characterizing the crystal field under stress are measured for neutral iron at interstitial sites in silicon. The coefficients are one order of magnitude larger than for Fe3+ in MgO. Both C11 and C44 turn out to be negative. (Read more)
- 317. J. Magn. Res. 21, 387 (1976) , “The Divacancy in Silicon: Spin-Lattice Relaxation and Passage Effects in Electron Paramagnetic Resonance”, C. A. J. Ammerlaan, A. van der Wiel.The longitudinal spin-lattice relaxation time T1 of the divacancy in silicon, in its positively charged state, was determined in the temperature region between 10 and 30 K. The study was made by measuring the line shape and amplitude of the electron paramagnetic resonance spectrum of V+2 (the Si-G6 spectrum) in a static magnetic field of 8.24 kOe. the passage conditions in observing the resonances were varied through the transition from adiabatic fast (ωmT1 > 1) to adiabatic slow (ωmT1 < 1) with respect to the audiofrequency (ωm) modulation field. Explicit formulas are derived to describe line shape and amplitude of the resonance in the transition region around ωmT1 = 1. The spin-lattice relaxation time found is given by T1(s) = 3.4 × 105 × T(K)-6.6, which demonstrates that the Raman two-phonon process is the active relaxation mechanism..
- 318. Sov. Phys. Semicond. 9, 1303 (1975) , “Characteristics of Radiation Damage in Silicon Bombarded with U235 Fission Fragments”, Zh. S. Takibaev, Yu. V. Gorelkinskii, V. F. Grishchenko, N. N. Gerasimenko.the ESR method was used in a study of the properties of radiation defects in silicon bombarded with U235 fission fragments. The source of these fragments was uranium dioxide irradiated, together with silicon, by reactor neutrons. It was established that the main defects generated by fission fragments were tetravacancies (called Si-P3 centers) and centers associated with amorphization (VV centers). An analysis of the distribution function of the concentration of paramagnetic centers demonstrated that individual fission fragments were capable of creating point defects in densities sufficient for the formation of an isolated amorphous region in Si. A continuous amorphous layer near the surface of an Si crystal was observed when the fission fragment density was ~1015cm-2. An estimate was obtained of the rate of introduction of paramagnetic centers whose average value was ~104cm-1 per fragment. The ESR signal disappeared completely after annealing at ~600℃.
- 319. Lattice Defects in Semiconductors 23, 126-148 (1975) , Institute of Physics, London , “Lattice Defects in Ion-Implanted Semiconductors”, L. C. Kimerling, J. M. Poate.This paper summerizes the current status of ion implantation damage research in semiconductors. We have attempted to review the recent interesting measurements and theories. the damage process is traced from the production mechanism to the structural and electrical properties of the defects and their annealing characteristics. Defect-impurity interactions and lattice site location of the implanted ion are discussed. New areas of research such as enhanced diffusion, gettering and mixing phenomena are discussed.
- 320. Solid State Commun. 16, 171 (1975) , “On the Role of Defect Charge State in the Stability of Point Defects in Silicon”, L. C. Kimerling, H. M. DeAngelis, J. W. Diebold.Defect annealing in 1-MeV electron-irradiated, phosphorus-doped silicon is studied. Charge state effects are explored directly using a p-n junction structure. A defect state which is associated with the E center (phosphorus-vacancy pair) is found to disappear at approximately 150°C with an... (Read more)
- 321. Sov. Phys. JETP 42, 1073 (1975) , “ESR and Spin Relaxation of Deep Centers in Semiconductors in the Presence of Photoelectrons (Si:Fe0)”, M. F. De?gen, V. Ya. Bratus, B. E. Vugme?ster, I. M. Zaritski?, A. A. Zolotukhin, A. A. Konchits, L. S. Milevski?.An investigation was made of the influence of photoelectrons on the ESR and spin relaxation of deep centers in semiconductors in the specific case of Si:Fe0. It was established that the appearance of conduction electrons generatd by optical illumination reduced the ESR signal intensity and gave rise to photoelectron-stimulated spectral diffusion in an inhomogeneously broadened ESR line of Fe0.Heating photoelectronsby an electric field resulted in a further reduction in the ESR signal of Fe0 because of an increase in the effective temperature of the photoelectrons. The observed behavior was explained by exchange scattering of photoelectrons on Fe0 center. Allowance for photoelectron recombination process made it possible to explain the reduction in the ESR signal whhich occurred as a result of optical illumination. A new mechanism of spectral diffusion in inhomogeneously broadened ESR lines was suggested: this diffusion was due to double exchange scattering of carriers by paramagnetic centers. A comparison of the theory with experiment yielded the cross section for the exchange scattering of electrons by Fe0 impurities and the dependence of the spin-lattice relaxation time of hot photoelectrons on their effective temperature.
- 322. Sov. Phys. Semicond. 8, 1049 (1975) , “Interaction of Hydrogen Atoms and Radiation Defects in the Case of H+ Ion Implantation in Silicon”, V. A. Botvin, Yu. V. Gorelkinskii, V. A. Kudryashev, V. O. Sigle.In an earlier paper1 we demonstrated that paramagnetic defects (Si-B2) were formed as a result of implantation of hydrogen ions in silicon single crystals. We also showed that implanted hydrogen atoms participated in the formation of these defects. Additional experiments were carried out in order to determine the interaction between the implanted hydrogen atoms and defects and to find the influence of these atoms on the recovery of the carrier density.
- 323. Lattice Defects in Semiconductors 23, 433-438 (1975) , Institute of Physics, London , “The EPR Spectra in Silicon with Dislocations”, H. Alexander, M. Kenn, B. Nordhofen, E. Weber.Plastic deformation introducing about 109cm-2 dislocations in silicon gives rise to a complex EPR signal. It consists of a group of central lines around g = 2 and a zero field splitting multiplet of 14 pairs of lines. At low temperature (≤30 K) the g tensor of the four most prominent central lines was determined. The lines belong to the same (broken bond type) centre Si-K1 in diffeerent orientations. The axes of this centre are oriented in an unusual manner. beginning at 60 K additional central lines appear, one of which can be ascribed to the existence of dangling bonds normal to the glide plane of the dislocations. The fine structure multiplet is due to a centre (Si-K2) with its g axes parallel to [011],[011],[100];[011] is the direction of the Burgers vector of most of the dislocations and the axis of a nearly axially symmetric D tensor. The splitting parameter changes strongly with temperature between 60 K and 225 K, where the multiplet disappears. Possible causes for the splitting are discussed.
- 324. Solid State Commun. 14, 735 (1974) , “On the Magnetic Properties of Dislocations in Silicon”, U. Schmidt, E. Weber, H. Alexander, W. Sander.The anisotropy of a group of equidistant lines in the EPR spectrum of plastically deformed Si can be described as line splitting in a nearly axial crystal field, the axis being parallel to the Burgers vector of the dislocations. We suppose that the spins of the unpaired electrons in the core of the... (Read more)
- 325. Solid State Commun. 15, 1781 (1974) , “EPR evidence of the self-interstitials in neutron-irradiated silicon*1”, Y. H. Lee, J. W. Corbett.Detailed studies on Si---P6 spectrum show that the spectrum has an unusual g-tensor symmetry (monoclinic II) and a large stress alignment (n/n|| = 17). A number of defect models for this spectrum were considered; two (<100> split-interstitial and <100> di-interstitial) are briefly discussed here.... (Read more)
- 326. Radiat. Eff. 22, 169 (1974) , “New EPR Spectra in Neutron-Irradiated Silicon (II)”, Y. H. Lee, P. R. Brosious, J. W. Corbett.Four new EPR spectra, arising from intrinsic defects in silicon created by neutron-irradiation, are resolved. Each spectrum is briefly discussed. Further detailed studies are required to establish defect models.
- 327. Phys. Lett. A 49, 425 (1974) , “An orientation-dependent defect in ion-implanted silicon*1”, Y. H. Lee, P. R. Brosious, J. W. Corbett.A new EPR spectrum is resolved in the N+-implanted silicon, and this center can be produced only by the (110) channeling ions in the region underneath the amorphous layer. (Read more)
- 328. J. Appl. Phys. 104, 083702 (2008) , “A bistable divacancylike defect in silicon damage cascades”, R. M. Fleming, C. H. Seager, D. V. Lang, E. Bielejec, and J. M. CampbellTwo deep level transient spectroscopy (DLTS) electron emission signatures, previously labeled E4 and E5, have been shown to be bistable with respect to minority carrier injection at room temperature. These result from two charge state transitions of the same defect. We have performed DLTS... (Read more)
- 329. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. JohanssonMigration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)
- 330. Infra-red studies of crystal defects 1-169 (1973) , Taylor and Francis,London , R. C. NewmanFOREWORD PREFACE 1. INTRODUCTION 2. INFRA-RED ABSORTION FROM A LATTICE CONTAINING POINT DEFECTS. 2.1. Normal Models of Vibration. 2.1.1. The one-dimensional linear chain. 2.1.2. The three-dimensional problem. 2.2. Infra-red Absorption due to Defects in Homopolar Crystals. 2.3. Absorption Measurements. 3. VIBRATIONS OF AN ANHARMONIC LOCAL OSCILLATOR. 3.1. The Sperical Oscillator (R3±Symmetry). 3.2. The Cubic Oscillator. 3.2.1. Oh Symmetry. 3.2.2. Td Symmetry. 3.3. The Trigonal Oscillator. 3.3.1. C3v Symmetry. 3.3.2. D3d Symmetry. 3.4. The Tetragonal Oscillator. 3.4.1. C4v Symmetry. 3.4.2. D4h Symmetry. 3.5. Resume and Result for other Point Symmetries. 4. LOCALIZED VIBRATIONS OF HYDROGEN AND DEUTERIUM IN THE ALKALINE EARTH FLUORIDES. 4.1. Isolated H- and D- Ions on F- Sites (Td Symmetry). 4.1.1. Reductions in symmetry due to the application of a uniaxial stress or an eletric field. 4.2. Other Local Mode Absorption due to H- Ions in Normally Undoped Crystals. 4.3. H- Ions in Crystals containing Rare-earth Ions. 4.3.1. Compensation of R.E.3+ by interstitial H- ions. 4.3.2. Divalent rare-earth hydrogen pairs. 4.3.3. R.E.3+-H- complexes in crystals containing oxygen. 4.4. Other Effects of Irradiation and Absorption due to Neutral Hydrogen. 4.5. The Electron-Phonon Interaction for a Rare-earth Hydrogen pair. 5. HYDROGEN IONS IN ALKALI HALIDE CRYSTALS. 5.1. Pure Crystals. 5.2. U centres in Mixed Halides. 5.2.1. Experimental observations. 5.2.2. Theoretical models. 5.3. Interstitial H- ions. 6. ONE-PHONON INFRA-RED ABSORPTION IN SILICON. 6.1. Neutral Impurities. 6.1.1. Isolated interstitial oxygen. 6.1.2. Absorption due to isolated substitutional impurities. 6.2.2. Boron paired with substitutional impurities. 6.2.3. Boron paired with lithium. 7. IRRADIATION DAMAGE IN SILICON. 7.1. The Oxygen-vacancy Centre. 7.2. Carbon-doped Silicon. 7.3. Germanium-doped Silicon. 7.4. Boron-doped Silicon. 7.5. Neutron Irradiations. 7.6. Ion-implantation studies. 7.7. Concluding Remarks. 8. ONE-PHONON ABSORPTION IN GERMANIUM. 8.1. Neutral Impurities. 8.1.1. Substitutional elements. 8.1.2. Oxygen impurities. 8.2. Electrically Active Impurities. 8.3. Irradiation Damage Bands. 9. COMPOUND III-V SEMICONDUCTORS. 9.1. GAllium Phosphide. 9.2. Gallium Arsenide. 9.2.1. Silicon and boron-doped crystals. 9.2.2. Lithium and copper-diffused crystals. 9.2.3. Crystals containing other impurities. 9.2.4. Ion implantation and other impurities. 9.3. Local Mode Absorption in other III-V Compounds. 9.4. Compensation of Experimental Results with Theory. REFERENCES
- 331. Appl. Phys. Lett. 80, 4777 (2002) , “Deep-level defects in InGaAsN grown by molecular-beam epitaxy”, R. J. Kaplar and S. A. RingelDeep-level transient spectroscopy (DLTS) studies on both p-type unintentionally doped and n-type (Si-doped), 1.05 eV band gap InGaAsN grown by molecular-beam epitaxy are reported. Two majority-carrier hole traps were observed in p-type material, H3 (0.38 eV)... (Read more)
- 332. Appl. Phys. Lett. 80, 4774 (2002) , “Effect of vacancy and interstitial excess on the deactivation kinetics of As in Si”, S. Solmi, M. Attari, and D. NobiliThe effect of a point defect excess, vacancies, or, respectively, interstitials, on the deactivation kinetics of As in Si was verified on silicon on insulator (SOI) substrates uniformly doped at concentrations in the range 1.87×1020 cm3. SOI samples can... (Read more)
- 333. Appl. Phys. Lett. 80, 4504 (2002) , “Preliminary investigations of infrared Er-related photoluminescence in ion-implanted In0.07Ga0.93N”, M. R. Correia, S. Pereira, A. Cavaco, and E. PereiraWe report the observation of the 1.54 µm emission from optically excited Er3+ in an ion-implanted In0.07Ga0.93N layer epitaxially strained grown by metalorganic chemical vapor deposition. The Er was implanted at 150 keV with a dose of 1×1015... (Read more)
- 334. Appl. Phys. Lett. 71, 3001 (1997) , “Photothermal reflectance investigation of ion implanted 6H–SiC”, K. L. Muratikov and I. O. UsovThe photoreflection method is applied to detailed characterization of the ion implanted silicon carbide. Experimentally and theoretically, it is shown that the photoreflection method can be an effective tool for the determination of the dose of implantation and the depth of the implanted layer. It... (Read more)
- 335. J. Appl. Phys. 81, 524 (1997) , “Neutron transmutation doping as an experimental probe for CuZn in ZnSe”, E. D. Wheeler and Jack L. BooneNuclear transmutation is employed in an investigation of copper doping in ZnSe. Copper atoms are introduced at zinc sites in ZnSe after crystal growth processes are complete. Since the copper dopants are introduced after growth, far from equilibrium, they are less able to form complexes with other... (Read more)
- 336. Radiation damage and defects in semiconductors 284 (1973) , The Institute of Physics,London, , “The influence of oxygen and acceptor impurities on the annealing of radiation defects in p-type silicon ”, V.S Vavilov,B.N Mukashev,A.V SpitsynBoth crucible-grown and float-zoned p-type silicon crystals, doped either with boron, gallium or aluminium, were irraadiated at 78 or 300 K by 1.5 MeV electrons and then were annealed at temperatures up to 700 K. Data on the concentration of radiation defects and their energy levels were derived from Hall coefficient and conductivity measurements. In the lowest oxygen content samples, a prominent carrier concentration recovery stage,located at T>360 K, was observed and was observed and was shown to be associated with annealing of the Ev+0.45 eV level radiation defects. The annealing activation energy increased practically linearly with the atomic size of the impurity. Therefore it is suggested that the defects in question are complexes of vacancies with acceptor impurity atoms.
- 337. Jpn. J. Appl. Phys. 12, 1307 (1973) , “ESR Studies on Defects and Amorphous Phase in Silicon Produced by Ion Implantation”, K. Murakami, K. Masuda, K. Gamo, S. Namba.Paramagnetic defects have been studied over a wide dose range. At doses>6×1014 P+/cm2, only one isotropic spectrum of g=2.0062±0.0004 which characterizes a continuous amorphous layer is observed. At doses between 0.1 and... (Read more)
- 338. Appl. Phys. Lett. 93, 152108 (2008) , “Internal gettering of iron in multicrystalline silicon at low temperature”, Rafael Krain, Sandra Herlufsen, and Jan SchmidtThe interstitial iron concentration in multicrystalline silicon wafers, determined from recombination lifetime measurements, is effectively reduced by annealing the wafers at very low temperature (300–500 °C). During annealing, the iron concentration decreases by more than one order of... (Read more)
- 339. Appl. Phys. Lett. 93, 103505 (2008) , “Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance”, A. Stesmans, P. Somers, V. V. Afanas'ev, W. Tian, L. F. Edge, and D. G. SchlomElectron spin resonance study on heteroepitaxial Si/insulator structures obtained through the growth of epi-Lu2O3 films on (111)Si (~4.5 % mismatched) by reactive molecular beam epitaxy indicates the presence in the as-grown state of interfacial Pb... (Read more)
- 340. Appl. Phys. Lett. 93, 032108 (2008) , “High-temperature annealing behavior of deep levels in 1 MeV electron irradiated p-type 6H-SiC”, Giovanni Alfieri and Tsunenobu KimotoWe report on the thermal stability of deep levels detected after 1 MeV electron irradiated p-type 6H-SiC. The investigation was performed by deep level transient spectroscopy, and an isochronal annealing series was carried out in the 373–2073 K temperature range. We found seven... (Read more)
- 341. Appl. Phys. Lett. 92, 222109 (2008) , “Deep level defects in a nitrogen-implanted ZnO homogeneous p-n junction”, Q. L. Gu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa, Y. F. Hsu, A. B. Djurišić, C. Y. Zhu, S. Fung, and L. W. LuNitrogen ions were implanted into undoped melt grown ZnO single crystals. A light-emitting p-n junction was subsequently formed by postimplantation annealing in air. Deep level transient spectroscopy was used to investigate deep level defects induced by N+ implantation and... (Read more)
- 342. J. Appl. Phys. 104, 043702 (2008) , “Mechanisms of unexpected reduction in hole concentration in Al-doped 4H-SiC by 200 keV electron irradiation”, Hideharu Matsuura, Nobumasa Minohara, and Takeshi OhshimaThe hole concentration in Al-doped p-type 4H-SiC was found to be significantly reduced by electron irradiation when compared to the hole concentration in Al-doped p-type Si; this is an unexpected result. The temperature dependence of the hole concentration p(T) in... (Read more)
- 343. J. Appl. Phys. 104, 023705 (2008) , “Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium”, E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, and P. ClauwsDeep levels have been studied in n-type germanium subjected to Co, Fe, Cu, Cr, and Pt germanidation in the temperature range between 300 and 700 °C by deep-level transient spectroscopy (DLTS). It is shown that most DLTS peaks can be assigned to acceptor levels of substitutional metal... (Read more)
- 344. J. Appl. Phys. 103, 123709 (2008) , “Optical detection of magnetic resonance and electron paramagnetic resonance study of the oxygen vacancy and lead donors in ZnO”, R. Laiho, L. S. Vlasenko, and M. P. VlasenkoOptical detection of magnetic resonance (ODMR) and electron paramagnetic resonance (EPR) spectra are investigated in ZnO single crystals. The strong negative ODMR line with axial symmetry of the g-tensor around the c axis with g=2.0133±0.0001 and... (Read more)
- 345. J. Appl. Phys. 103, 104505 (2008) , “Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam”, A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K. Akimoto, H. Kudo, and S. IshibashiA relationship between intra-4f transitions of Er and vacancy-type defects in Er-doped GaN was studied by using a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured for Er-doped GaN grown by molecular beam epitaxy. A clear correlation between... (Read more)
- 346. J. Appl. Phys. 103, 094901 (2008) , “Investigation of the origin of deep levels in CdTe doped with Bi”, E. Saucedo, J. Franc, H. Elhadidy, P. Horodysky, C. M. Ruiz, V. Bermúdez, and N. V. SochinskiiCombining optical (low temperature photoluminescence), electrical (thermoelectric effect spectroscopy), and structural (synchrotron X-ray powder diffraction) methods, the defect structure of CdTe doped with Bi was studied in crystals with dopant concentration in the range of... (Read more)
- 347. J. Appl. Phys. 103, 093701 (2008) , “Characterization of plasma etching damage on p-type GaN using Schottky diodes”, M. Kato, K. Mikamo, M. Ichimura, M. Kanechika, O. Ishiguro, and T. KachiThe plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of... (Read more)
- 348. Phys. Rev. B 69, 045208 (2004) , “Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance”, P. Johannesen, A. Zakrzewski, L. S. Vlasenko, G. D. Watkins, Akira Usui, Haruo Sunakawa, and Masashi MizutaOptical excitation at 1.7 K with 364-nm laser light produces partial annealing recovery of the damage produced in GaN by 2.5-MeV electron irradiation in situ at 4.2 K. Observed is a reduction in the irradiation-produced 0.95-eV photoluminescence (PL) band, recovery in the visible... (Read more)
- 349. Phys. Rev. B 69, 045207 (2004) , “Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance”, K. H. Chow, L. S. Vlasenko, P. Johannesen, C. Bozdog, G. D. Watkins, Akira Usui, Haruo Sunakawa, Chiaki Sasaoka, and Masashi MizutaIrradiation of GaN by 2.5-MeV electrons in situ at 4.2 K produces a broad photoluminescence (PL) band centered at 0.95 eV. Optical detection of electron paramagnetic resonance (ODEPR) in the band reveals two very similar, but distinct, signals, L5 and L6, which we identify as interstitial... (Read more)
- 350. Phys. Rev. Lett. 92, 047602 (2004) , “Overhauser Effect of 67Zn Nuclear Spins in ZnO via Cross Relaxation Induced by the Zero-Point Fluctuations of the Phonon Field”, Hubert Blok, Serguei B. Orlinski, Jan Schmidt, and Pavel G. BaranovHole burning in and displacements of the magnetic-resonance absorption line of the electron spin of the shallow hydrogen-related donor in ZnO are observed upon resonant irradiation with microwaves at 275 GHz and at 4.5 K in a magnetic field of 10 T. These effects arise from an almost complete... (Read more)
- 351. Appl. Phys. Lett. 93, 141907 (2008) , “Experimental evidence of tetrahedral interstitial and bond-centered Er in Ge”, S. Decoster, B. De Vries, U. Wahl, J. G. Correia, and A. VantommeWe report on an emission channeling study of the lattice site location of implanted Er in Ge together with its thermal stability. We found direct experimental evidence of Er atoms located on the tetrahedral (T) interstitial site and on the bond-centered (BC) site, with a maximum total occupancy... (Read more)
- 352. J. Appl. Phys. 104, 054110 (2008) , “The effect of implanting boron on the optical absorption and electron paramagnetic resonance spectra of silica”, R. H. Magruder, III, A. Stesmans, R. A. Weeks,, and R. A. WellerSilica samples (type III, Corning 7940) were implanted with B using multiple energies to produce a layer ~600 nm thick in which the concentration of B ranged from 0.034 to 2.04 at. %. Optical absorption spectra were measured from 1.8 to 6.5 eV. Electron paramagnetic resonance (EPR) measurements... (Read more)
- 353. Phys. Rev. B 78, 113202 (2008) , “Two FeH pairs in n-type Si and their implications: A theoretical study”, N. Gonzalez Szwacki, M. Sanati, and S. K. EstreicherExperimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first... (Read more)
- 354. Phys. Rev. Lett. 94, 165501 (2005) , “Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy”, M. Rummukainen, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, and H.-J. L. GossmannPositron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 12 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the... (Read more)
- 355. Phys. Rev. Lett. 94, 125501 (2005) , “Delocalized Nature of the Edelta[prime]" align="middle"> Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report an experimental study by electron paramagnetic resonance (EPR) of Edelta[prime]" align="middle"> point defect induced by γ-ray irradiation in amorphous SiO2. We obtained an estimation of the intensity of the 10 mT doublet characterizing the EPR... (Read more)
- 356. Phys. Rev. Lett. 94, 097602 (2005) , “Shallow Donors in Semiconductor Nanoparticles: Limit of the Effective Mass Approximation”, Serguei B. Orlinskii, Jan Schmidt, Edgar J. J. Groenen, Pavel G. Baranov, Celso de Mello Donegá, and Andries MeijerinkThe spatial distribution of the electronic wave function of a shallow, interstitial Li donor in a ZnO semiconductor nanocrystal has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by electron nuclear double resonance... (Read more)
- 357. Phys. Rev. Lett. 93, 055505 (2004) , “Ga Sublattice Defects in (Ga,Mn)As: Thermodynamical and Kinetic Trends”, F. Tuomisto, K. Pennanen, K. Saarinen, and J. SadowskiWe have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga1xMnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite... (Read more)
- 358. Phys. Rev. Lett. 93, 055504 (2004) , “Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells”, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergThe formation mechanism and properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation is investigated using density functional calculations. We find that boron traps an oxygen dimer to form a bistable defect with a donor level in... (Read more)
- 359. Phys. Rev. Lett. 92, 255504 (2004) , “Stable Fourfold Configurations for Small Vacancy Clusters in Silicon from ab initio Calculations”, D. V. Makhov and Laurent J. LewisUsing density-functional-theory calculations, we have identified new stable configurations for tri-, tetra-, and pentavacancies in silicon. These new configurations consist of combinations of a ring hexavacancy with three, two, or one interstitial atoms, respectively, such that all atoms remain... (Read more)
- 360. Phys. Rev. Lett. 92, 047603 (2004) , “Probing the Wave Function of Shallow Li and Na Donors in ZnO Nanoparticles”, Serguei B. Orlinskii, Jan Schmidt, Pavel G. Baranov, Detlev M. Hofmann, Celso de Mello Donegá, and Andries MeijerinkElectron paramagnetic resonance and electron nuclear double resonance (ENDOR) experiments on ZnO nanoparticles reveal the presence of shallow donors related to interstitial Li and Na atoms. The shallow character of the wave function is evidenced by the multitude of 67Zn ENDOR lines and... (Read more)
- 361. Phys. Rev. Lett. 92, 017402 (2004) , “Shallow Donors in Diamond: Chalcogens, Pnictogens, and their Hydrogen Complexes”, S. J. Sque, R. Jones, J. P. Goss, and P. R. BriddonThe utility of diamond as an electronic material is compromised by the lack of a suitable shallow donor. Here, ab initio theory is used to investigate the donor levels of substitutional pnictogen (N, P, As, and Sb) and chalcogen (S, Se, and Te) impurities and chalcogen-hydrogen defects in... (Read more)
- 362. Phys. Rev. Lett. 92, 015504 (2004) , “Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO2 Glass”, Koichi Kajihara, Linards Skuja, Masahiro Hirano, and Hideo HosonoThe role of mobile interstitial oxygen atoms (O0) in defect processes in oxides is demonstrated by interconversion between the oxygen dangling bond and the peroxy radical (POR) in SiO2 glass. Superstoichiometric O0 was created by F2 laser photolysis of the... (Read more)
- 363. Phys. Rev. Lett. 94, 186101 (2005) , “Geometric Characterization of a Singly Charged Oxygen Vacancy on a Single-Crystalline MgO(001) Film by Electron Paramagnetic Resonance Spectroscopy”, Martin Sterrer, Esther Fischbach, Thomas Risse, and Hans-Joachim FreundElectron paramagnetic resonance spectra of singly charged surface oxygen vacancies (F or color centers) formed by electron bombardment on a single-crystalline MgO film under UHV conditions are reported. The embedding of the defect in a well-defined geometrical environment allows not only for... (Read more)
- 364. Sov. Phys. Semicond. 6, 1453 (1973) , “Paramagnetic Centers in Silicon Irradiated with Heavy Charged Particles”, V. A. Botvin, Yu. V. Gorelkinskii, V. O. Sigle, M. A. Chubisov.The ESR method was used to study paramagnetic centers generated in silicon single crystals by irradiation with 37-MeV α particles or 9-MeV protons at 273ºK. The experiments were carried out on silicon grown by the floating-zone and Czochralski methods and doped with P31, B11, and A27. The existence of Si-P3, Si-P1, Si-P4, Si-P5, Si-S1 (Si-B2), and Si-S2 centers was established in the proton-irradiated samples. The Si-S1 and Si-S2 centers were not found in the α-irradiated silicon. The characteristics of isochronous annealing of the various centers were determined. The distribution of the paramagnetic centers along the trajectories of the incident particles was determined by successive removal of silicon layers from the irradiated side. The rates of introduction of the paramagnetic centers by α particles and protons were estimated.
- 365. Jpn. J. Appl. Phys. 10, 52-62 (1971) , “Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance I”, Y. NishiThree kinds of paramagnetic centers named PA, PB and PC have been found in a silicon-silicon dioxide structure at liquid nitrogen temperature. PA (g=∼2.000, ΔH=∼4 Oe), and PB having anisotropic g-value... (Read more)
- 366. Radiat. Eff. 15, 77 (1972) , “New EPR Spectra in Neutron-Irradiated Silicon”, Y. H. Lee, Y. M. Kim, J. W. Corbett.Six new EPR spectra are reported which are apparently due to intrinsic defects created in the neutron-irradiation and, in some cases, annealing of silicon. In addition a spectrum similar to, but distinct from, that due to the vacancy-phosphorus center is reported. Some tentative defect models are discussed to emphasize the features of the spectra, but more detailed studies are required to establish the identity of the giving rise to these spectra.
- 367. Sov. Phys. Semicond. 5, 1930 (1972) , “EPR of Zinc Atoms in p-Type Silicon”, V. B. Ginodman, P. S. Gladkov, B. G. Zhurkin, B. V. Kornilov.Zinc is a double accepter in silicon and it introduces two levels, E + 0.31 and E + 0.55 eV, into forbidden band [1,2]. The electrical and optical properties of zinc-doped silicon have been investigated by several workers [2-4]. A brief report of the observation of EPR in silicon is given in [5,6]: in these investigations the magnetic field H was perpendicular to the axis of compression of a crystal. Uniaxial compression gave rise to a structure in EPR spectrum of Zn67 and this structure was attributed to the hyperfine interaction of an unpaired hole with the magnetic moment of the Zn67 nucleus. The present paper describes the result of an investigation of the EPR of the Zn- state of zinc in p-type silicon doped with zinc in p-type silicon doped with zinc and phosphorus. The investigation was carried out at liquid helium temperature.
- 368. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ºK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK---just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 369. Radiat. Eff. 8, 203 (1971) , “An EPR Study of Fast Neutron Radiation Damage in Silicon”, D. F. Daly, H. E. Noffke.Using electron paramagnetic resonance (EPR) the indensity of the point defects produced by fast neutron irradiation of silicon at room temperature has been determined and the concentration of each defect has been measured. Irradiations were perfrmed at an unmoderated fast burst reactor to assure that damage from gamma irradiation could be neglected and that all the obsserved damage could be attributed to desplacements by fast neutrons. Total fast neutron fluence between 1.2×1015 n/cm2 and 7×1015 n/cm2 was used. The initial rate of removal of the phosphorus donor agrees with the initial carrier removal. However, the production rate for the paramagnetic damage centers is approximately 10 per cent of the carrier removal and less than 1 per cent of the estimated number of displacements per neutron collision. For samples containing approcimately 1016 phosphorus donoers/cm3, the neutral spectrum is observed simultaneously with the negative divacancy spectrum (Si-G7) in both crucible-grown and float-zone crystals. According to the energy level scheme determined for these spectra in electron irradiation silicon, these spectra cannot appear simultaneously if the sample is in equilibrium and uniformly irradiated. From the observation of these spectra, it is concluded that the damage concentrarion and hence the depth of the Fermi level is nonuniform on a microscopic scale. These results are interpreted according to the cluster model for the neutron damage. The cluster consists of a core of damaged silicon with the Fermi level at the center of the band gap and a surrounding space charge region. Outside the space charge region, the Fermi level is the same as in undamaged silicon. It is concluded that the low production rate of the point defects and the non-uniform Fermi level constitute microscopic evidence for the defect cluster model of fast neutron damage in silicon.
- 370. Solid State Commun. 8, 175 (1970) , “Low temperature electron irradiation of silicon containing carbon ”, A. R. Bean and R. C. NewmanPrevious work has shown that irradiation of silicon at low temperatures leads to the formation of a centre giving rise to local mode absorption bands at 922 and 932 cm-1; this centre has been ascribed to a carbon-oxygen complex with a trapped silicon interstitial in an adjacent site. It... (Read more)
- 371. Sov. Phys. Semicond. 2, 688 (1968) , “Electron Paramagnetic Resonance of Boron in Dislocation-Free Silicon Crystals”, B. G. Zhurkin, N. A. Penin, N. N. Sibeldin.A study was made of the dependence of the EPR line of boron in uncompensated p-type silicon on the uniaxial compression, the concentration of boron in dislocation-free crystals, and on the dislocation density. It was found that an increase in the concentration of boron from 2・1016 to 1.5・1018 cm-3 broadened the resonance line. When the dislocation density was increased from zero to 2・105 cm-2, the resonance line broadened to more than twice its original width. The experiments were carried out at T = 4.2ºK and the compressive forces were applied along the [111] and [110]. The line width was practically independent of the direction of compression. The results obtained were in qualitative agreement with the theory.
- 372. Radiation Damage in Semiconductors 97-113 (1965) , Dunod, Paris , “A Review of EPR Studies in Irradiated Silicon”, G. D. Watkins.1. INTRODUCTION (p.97): 2. THE EPR EXPERIMENT (p.97): 3. RESULTS (p.99): A. The lattice Vacancy (p.99), B. Vacancies Trapped by Other Defects (p.102), C. Vacancy Motion (p.103), D. Interstitial Defects (p.103), E. Other Spectra (p.105), 4. SUMMARY AND CONCLUSION (p.110): 5.ACKNOWLEDGMENTS (p.110):
- 373. J. Phys. Soc. Jpn. 20, 1447 (1965) , “Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures”, S. Maekawa, N. Kinoshita.Effects of exchange and motion on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×1016cm-3~3×1019cm-3 were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of... (Read more)
- 374. J. Phys. Soc. Jpn. sppl. II, 18, 22 (1963) , “An EPR Study of the Lattice Vacancy in Silicon”, G. D. Watkins.An EPR spectrum is observed in silicon which is identified as arising from the isolated lattice vacancy. It is observed in p-type silicon which has been irradiated in situ at~40ºK by 1.5 Mev electrons. A simple molecular orbital treatment of the vacancy is outlined which describes many of the features of the spectrum and predicts the observed anisotrophy as resulting from a Jahn-Teller distortion. Studies of the disappearance of the vacancy vs anneal are described and interpreted in terms of long range migration of the vacancy and subsequent trapping by other defects. The activation energy for vacancy motion is determined to be 0.33±.03 ev in p-type material. Further study is required in n-type silicon before an unambiguous interpretation of the emergence of vacancy-impurity pairs can be made.
- 375. Solid State Physics 13, 223-304 (1962) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Electron Spin Resonance in Semiconductors”, G. W. Ludwig, H. H. Woodbury.I. Introduction (p.223): II. The Resonance Technique (p.226): 1. The Spin Hamiltonian (p.226), 2. The Spin Resonance Spectrum (p.231), 3. Experimental Techniques (p.237), III. Resonance Studies in Silicon (p.243): 4. Shallow Donor Impurities (p.244), 5. Shallow Acceptor Impurities (p.259), 6. Transition Metal Ions (p.263), 7. Impurity Pairs (p.273), 8. Radiation Damage Centers (p.280), IV.Resonance Studies in Other Semiconductors (p.286): 9. Germanium (p.286), 10. Graphite and Diamond (p.290), 11. Silicon Carbide (p.293), 12. Indium Antimonide and Gallium Phosphide (p.294), 13. Zinc Sulfide and Related Semiconductors (p.295), Acknowledgments (p.304)
- 376. Phys. Rev. Lett. 95, 105502 (2005) , “Importance of Quantum Tunneling in Vacancy-Hydrogen Complexes in Diamond”, M. J. Shaw, P. R. Briddon, J. P. Goss, M. J. Rayson, A. Kerridge, A. H. Harker, and A. M. StonehamOur ab initio calculations of the hyperfine parameters for negatively charged vacancy-hydrogen and nitrogen-vacancy-hydrogen complexes in diamond compare static defect models and models which account for the quantum tunneling behavior of hydrogen. The static models give rise to hyperfine... (Read more)
- 377. Phys. Rev. B 78, 085214 (2008) , “First-principles study of native defects in CdGeAs2”, Tula R. Paudel and Walter R. L. LambrechtFirst-principles results are presented for various native defects in CdGeAs2 as function of the relevant elements' chemical potentials. The defect formation energies were calculated using fully relaxed 64 atom supercells by means of the full-potential linearized muffin-tin orbital... (Read more)
- 378. Phys. Rev. B 78, 085205 (2008) , “Formation and origin of the dominating electron trap in irradiated p-type silicon”, Lasse Vines, E. V. Monakhov, A. Yu. Kuznetsov, R. Kozowski, P. Kaminski, and B. G. SvenssonDeep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6×1013−2×1015 cm−3.... (Read more)
- 379. Phys. Rev. B 78, 085202 (2008) , “Evolution of vacancy-related defects upon annealing of ion-implanted germanium”, J. Slotte, M. Rummukainen, F. Tuomisto, V. P. Markevich, A. R. Peaker, C. Jeynes, and R. M. GwilliamPositron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 ... (Read more)
- 380. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 381. Phys. Rev. Lett. 95, 225502 (2005) , “Evidence for Native-Defect Donors in n-Type ZnO”, D. C. Look, G. C. Farlow, Pakpoom Reunchan, Sukit Limpijumnong, S. B. Zhang, and K. NordlundRecent theory has found that native defects such as the O vacancy VO and Zn interstitial ZnI have high formation energies in n-type ZnO and, thus, are not important donors, especially in comparison to impurities such as H. In contrast, we use both theory... (Read more)
- 382. Phys. Rev. B 78, 035125 (2008) , “Mechanisms of electrical isolation in O+-irradiated ZnO”, A. Zubiaga, F. Tuomisto, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. YanoWe have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are... (Read more)
- 383. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. CapanWe have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×1015 cm−3] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)
- 384. Phys. Rev. Lett. 96, 205504 (2006) , “First-Principles Study of the Diffusion of Hydrogen in ZnO”, M. G. Wardle, J. P. Goss, and P. R. BriddonZinc oxide, a wide-gap semiconductor, typically exhibits n-type conductivity even when nominally undoped. The nature of the donor is contentious, but hydrogen is a prime candidate. We present ab initio calculations of the migration barrier for H, yielding a barrier of less than ~0.5 ... (Read more)
- 385. Phys. Rev. Lett. 96, 196402 (2006) , “Nitrogen Vacancies as Major Point Defects in Gallium Nitride”, M. G. Ganchenkova and R. M. NieminenWe present results of ab initio calculations for vacancies and divacancies in GaN. Particular attention is paid to nitrogen vacancies and mixed Ga-N divacancies in negatively charged states, which in n-type GaN are found to be energetically comparable with gallium vacancies. We also... (Read more)
- 386. Phys. Rev. Lett. 96, 035505 (2006) , “Mutual Passivation of Donors and Isovalent Nitrogen in GaAs”, Jingbo Li, Pierre Carrier, Su-Huai Wei, Shu-Shen Li, and Jian-Bai XiaWe study the mutual passivation of shallow donor and isovalent N in GaAs. We find that all the donor impurities, SiGa, GeGa, SAs, and SeAs, bind to N in GaAs:N, which has a large N-induced band-gap reduction relative to GaAs. For a group-IV impurity such... (Read more)
- 387. phys. stat. sol. (a) 21, 677 (1974) , “EPR Measurements in Ion-Implanted Diamond”, P. R. Brosious, J. W. Corbett, J. C. BourgoinA new EPR spectrum, arising from defects in diamond created by boron, carbon, and nitrogen ion-implantation, is observed. The spectrum, lattice damage production, and annealing of damage are discussed and are ascribed to amorphous carbon. (Read more)
- 388. phys. stat. sol. (a) 50, 237 (1978) , “High-Temperature Ion Implantation in Diamond”, Y. H. Lee, P. R. Brosious, J. W. CorbettC+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion-induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous” carbon by an order of... (Read more)
- 389. phys. stat. sol. (a) 154, 219 (1996) , “Microstructure Evolution and Defect Incorporation in Highly Oriented and Textured CVD Diamond Films”, Y. von Kaenel, J. Stiegler, E. Blank, O. Chauvet, Ch. Hellwig, K. PlamannA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 390. phys. stat. sol. (a) 157, 405 (1996) , “On the Nature of Deep Donors Created at 450 C in Boron-Doped p-Si”, V. M. Babich, N. P. Baran, M. Ya. Valakh, V. L. Kiritsa, G. Yu. Rudko.It is shown that the boron impurity in oxygen-rich p-Si is involved in the formation of electrically active complexes, namely, deep thermal donors, during thermal annealing at T = 450°C. The conclusion is based on experimental results obtained by several techniques such as Hall measurements,... (Read more)
- 391. phys. stat. sol. (a) 121, 63 (1990) , “Point Paramagnetic Defects in Diamond Irradiated by High-Energy Ions”, D. P. Erchak, R. B. Grelfand, N. M. Penina, V. F. Stelmakh, V. P. Tolstykh, A. G. Ulyashin, V. S. Varichenko, A. M. ZaitsevA series of highly oriented and textured microwave CVD diamond films, where only the deposition time was varied, was deposited on silicon wafers in order to follow the evolution of the microstructure and defect content with film thickness. SEM, XRD, Raman spectroscopy, luminescence measurements, and... (Read more)
- 392. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 393. phys. stat. sol. (a) 181, 5-10 (2000) , “ESR Study of Phosphorus Implanted Type IIa Diamond”, N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy, R. KalishCold Implantation and Rapid Annealing (CIRA) at 1050 °C of P in IIa diamond crystal, then further annealing at 1400 °C were performed. EPR signals were obtained in particular (i) around g = 2.003, from “dangling bond” defects whose total concentration increases with the dose and decreases... (Read more)
- 394. phys. stat. sol. (b) 86, 119 (1978) , “Nonrandom Strain in "crushed" silicon. EPR of thermally excited lithium donors”, M. Höhne.Si:Li single crystals with crushed surface layers are investigated by EPR. Measurements at 1.5 K show that these layers, which contain in the outer part also the dangling bond centre with g = 2.0055, nearly preserve their crystalline order, but exhibit strains preferentially perpendicular to the... (Read more)
- 395. phys. stat. sol. (b) 210, 415-427 (1998) , “The Microscopic and Electronic Structure of Shallow Donors in SiC”, S. Greulich-WeberNitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
- 396. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 397. phys. stat. sol. (b) 164, 503 (1991) , “EPR of New Platinum-Related Complexes in Silicon I. Defects of Symmetry C1h Formed at Intermediate Temperatures”, M. Höhne, W. Gehlhoff.The variety of Pt-related complex defects in silicon is enlarged by EPR detection of a new group of defects, each of them containing one Pt ion. They are formed by different annealing procedures, including a step at intermediate temperatures. Two of the new complexes exhibit an EPR spectroscopic... (Read more)
- 398. phys. stat. sol. (b) 165, 189 (1991) , “EPR of New Platinum-Related Complexes in Silicon. II. Coexistence of a Tetragonal Jahn-Teller System and a Nearly Trigonal System in One Pair”, M. Höhne, W. Gehlhoff.A spectroscopic peculiarity of two Pt-related complex defects is interpreted for both of them by assuming one Pt ion in a crystal field, which is tetragonal, though another defect is trigonally coordinated. This coexistence is discussed in the framework of a static Jahn-Teller effect. Wave... (Read more)
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Investigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
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Nitrogen donors in 6H-, 4H- and 3C-SiC were investigated using conventional electron paramagnetic resonance (EPR) and electron nuclear double resonance (ENDOR) and the experimental results are discussed. An attempt is presented to interpret the experimentally found large differences in hyperfine... (Read more)
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