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- 301. phys. stat. sol. (b) 99, 651 (1980) , “Electron Paramagnetic Resonance of Gold in Silicon.I. Single Atoms; Strong Nuclear Quadrupole Effect”, M. Höhne.In Si : Au rapidly quenched two centres are observed by EPR, the first of which is investigated in this paper. The spectrum is characterized by a dominating Zeeman interaction and by a nuclear quadrupole interaction large compared to the hyperfine interaction. Passage conditions depend on the... (Read more)
- 302. Phys. Rev. Lett. 44, 1627 (1980) , “Jahn-Teller-Distorted Nitrogen Donor in Laser-Annealed Silicon”, Keith L. BrowerSubstitutional nitrogen donors in single-crystal silicon have been produced by pulsed ruby-laser annealing of amorphous silicon created by 4×1015 160-keV (0.995 28Si+ + 0.005 14N2+)/cm2. EPR measurements indicate that these... (Read more)
- 303. Phys. Rev. Lett. 44, 593 (1980) , “Negative-U Properties for Point Defects in Silicon ”, G. D. Watkins and J. R. Troxell*Experimental evidence is presented in support of a recent suggestion by Baraff, Kane, and Schlüter that the isolated lattice vacancy in silicon is an Anderson negative-U system. The second donor level (+/++) (of charge state + if defect level is occupied by an electron; ++, if unoccupied) is... (Read more)
- 304. Phys. Rev. B 21, 4951 (1980) , “Radiation defects in ion-implanted silicon. II. Mössbauer spectroscopy of 119Sn defect structures from implantations of radioactive tellurium”, A. Nylandsted Larsen*, G. Weyer, and L. NanverDefect structures containing Sn impurity atoms in silicon have been studied by Mössbauer emission spectroscopy on the 24-keV transition of 119Sn. The defects have been produced by ion implantation of radioactive 119mTe. This decays via the decay chain... (Read more)
- 305. Phys. Rev. B 22, 2050 (1980) , “GaAs:Cr3+(3d3)—an orthorhombic Jahn-Teller center with a stress-dependent reorientation rate”, G. H. Stauss and J. J. KrebsThe Cr3+(3d3) EPR center in GaAs has been investigated using controlled uniaxial stress at temperatures from 1.8 to 4.2 K. Stresses up to 1200 kg/cm2 were applied along the [001], [111], [110], and [112] axes. The rapidity of stress alignment of the distortions at... (Read more)
- 306. Phys. Rev. B 22, 3141 (1980) , “New EPR data and photoinduced changes in GaAs:Cr. Reinterpretation of the “second-acceptor” state as Cr4+”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardSeveral samples with Fermi levels ranging from the valence to the conduction band show that the resonance previously attributed to Cr1+ is due to Cr4+, and no additional signal is observed under conditions where Cr1+ would be expected to exist. The double-acceptor... (Read more)
- 307. Phys. Rev. B 22, 921 (1980) , “Interstitial Boron in Silicon: A negative-U System”, J. R. Troxell, G. D. Watkins.An electrical level 0.45 eV below the conduction band is detected by deep-level-capacitance transient spectroscopy (DLTS) in boron-doped silicon irradiated at 4.2 K by 1.5-MeV electrons. This level is attributed to interstitial boron. Greatly enhanced annealing of the level is observed under... (Read more)
- 308. Jpn. J. Appl. Phys. 19, L335 (1980) , “Isothermal Capacitance Transient Spectroscopy for Determination of Deep Level Parameters ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is proposed, by which the measurement of the transient change of capacitance is performed under an isothermal condition (Isothermal Capacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis... (Read more)
- 309. J. Appl. Phys. 51, 1484 (1980) , “The Solution of Iron in Silicon”, E. Weber, H. G. Riotte.The solution of iron in silicon has been examined by instrumental neutron activation analysis (NAA) and EPR of quenched samples. It was possible to obtain the total iron concentration and the concentration of interstitial iron for each specimen as a function of temperature. During the heat treatment... (Read more)
- 310. J. Appl. Phys. 51, 419 (1980) , “Optically induced transient electron paramagnetic resonance phenomena in GaAs:Cr”, A. M. White, J. J. Krebs, and G. H. StaussThe dynamics of EPR spectra of the charge states of Cr in GaAs during and following optical excitation are profoundly determined by the presence of other traps. Transients are slow, nonexponential, not thermally activated, and sample dependent. We show that the instability of Cr1 + and... (Read more)
- 311. Hyperfine Interactions 7, 449 (1980) , “Mössbauer study of 119Sn Defects in Silicon from Ion Implantations of Radioactive 119In ”, Weyer G.1 Damgaard S.1 Petersen J. W.1 and Heinemeier J.Radioactive 119In+ions (T1/2 = 2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mössbauer emission spectra from the 24 keV γ-radiation of the daughter 119Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn-impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects. (Read more)
- 312. Appl. Phys. Lett. 36, 171 (1980) , “Erratum: Self-diffusion in intrinsic silicon”, Ludomir Kalinowski and Remy SeguinIn the abstract the temperature range for diffusion should read "from 855 to 1175 ºC" in place of "from 885 ot 1175ºC", and the activation energy as "107.1 kcal/mole" instead of "110.6 kcal/mole". (Read more)
- 313. Appl. Phys. Lett. 36, 1711 (1980) , “Self-diffusion in silicon as probed by the ( p,) resonance broadening method”, J. Hirvonen and A. AnttilaThe self-diffusion preexponential factor D0=8.0 cm2/s and activation energy Q=4.1 eV for intrinsic silicon have been determined with the ( p,) resonance broadening method in the temperature region 9001100 °C, in a first application of this method... (Read more)
- 314. Sov. Phys. Solid State 23, 2126 (1981) , “Electron spin resonance of exchange-coupled vacancy pairs in hexagonal silicon carbide”, V. S. Va?ner, V. A. ll’in
- 315. Solid-State Electronics 24, 869 (1981) , “Theoretical and practical investigation of the thermal generation in gate controlled diodes ”, Jan van der Spiegel and Gilbert J. DeclerckThe different components of thermal generation in a gate controlled diode are studied theoretically and experimentally. Expressions for the generation current in the space charge layer, the diffusion current from the quasi-neutral bulk and the surface generation current are derived for a... (Read more)
- 316. Solid State Commun. 37, 371 (1981) , “A New EPR Center Due to Dislocations in Phosphorous Doped Silicon”, E. Weber and H. AlexanderIn plastically deformed, phosphorous doped silicon a new EPR center is found, Si-K7, which has to be ascribed to an impurity related defect in the dislocation core. From its concentration the accumulation of impurity atoms, supposedly phosphorous, in the dislocation core can be concluded. (Read more)
- 317. Solid State Commun. 40, 285-289 (1981) , “Anion antisite defects in GaAs and GaP”, T. L. Reinecke and P. J. Lin-ChungThe electronic properties of anion antisite defects and the related ideal cation vacancies are calculated based on tight-binding Hamiltonians and using a novel recursion method. For the antisite defects symmetric A1 states are found in the upper part of the fundamental gaps, and for the ideal... (Read more)
- 318. Solid State Commun. 40, 473-477 (1981) , “The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR”, N. K. Goswami, R. C. Newman and J. E. WhitehouseN-type GaAs doped with sulphur (2.8 × 1018 cm-3) has been subjected to 2 MeV electron irradiation in stages at room temperature and examined by the EPR technique. When the free carrier absorption is first eliminated no EPR signal is detected. After further irradiation, the spectrum of the As... (Read more)
- 319. phys. stat. sol. (b) 103, 519 (1981) , “Investigation of the Dislocation Spin System in Silicon as Model of One-Dimensional Spin Chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.Magnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 320. phys. stat. sol. (b) 103, 519-528 (1981) , “Investigation of the dislocation spin system in silicon as model of one-dimensional spin chains”, V. A. Grazhulis, V. V. Kveder, Yu. A. OsipyanMagnetic properties of the dislocation dangling bond (DDB) spin system in silicon crystals are investigated by means of the EPR technique at T = (1.3 to 150) K. Experimental results are obtained which enable one to develop a one-dimensional model of the spin system according to which the DDB chains... (Read more)
- 321. phys. stat. sol. (b) 104, K79 (1981) , “Changes in the EPR of Gold in Silicon Induced by Light”, M. Höhne, A. A. Lebedev.Since a long time gold is known as a dopant in silicon, which strongly affects recombination processes /1/ and which produces an acceptor level 0.55 eV below the conduction band (CB) and a donor level 0.33 eV above the valence band (VB) /2/. Electric and photoelectric properties were thoroughly... (Read more)
- 322. phys. stat. sol. (b) 105, K91 (1981) , “Determination of the Zero-Field Splitting of Iron-Boron Pairs in Silicon”, W. Gehlhoff, K. H. Segsa, C. Meyer.In hte discussion of the omportant role of iron in connection with the formation of htermally induced defects in sillicon /1 to 4/ it seems to be expedient to remind of the fact that the direct detection of iron by EPR measurements is not restricted to the observation of neutral iron on a T... (Read more)
- 323. phys. stat. sol. (b) 108, 363 (1981) , “EPR Observation of an Au-Fe Complex in Silicon: I. Experimental Data”, R. L. Kleinhenz, Y. H. Lee, J. W. Corbett, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan.After quenching of Au-doped FZ silicon an anisotropic axially symmetric EPR spectrum is observed. The spectrum exhibits a hyperfine interaction with 197Au nuclei (I = 3/2). In samples which were intentionally doped with isotopically enriched 57Fe (I = 1/2) an additional... (Read more)
- 324. phys. stat. sol. (a) 68, 561 (1981) , “Thermally-Induced Defects in Silicon Containing Oxygen and Carbon”, N. S. Minaev, A. V. MudryiThermal defect generation processes are investigated in heat-treated (250 to 600 ºC, 1 to 500 h) silicon crystals by a low-temperature photoluminescence method. In the spectral range from 0.75 to 1.20 eV, a number of emission bands are found. Some of these bands have been already observed in the... (Read more)
- 325. Phys. Rev. Lett. 47, 954 (1981) , “Reorientation of Nitrogen in Type-Ib Diamond by Thermal Excitation and Tunneling”, C. A. J. Ammerlaan, E. A. BurgemeisterThe rate of anneal of stress-induced ordering of isolated substitutional nitrogen impurities in diamond, measured in the temperature range 78 K<T<200 K, shows large deviations from Arrhenius-type behavior. It is concluded that in the temperature range considered, reorientation of the centers... (Read more)
- 326. Phys. Rev. B 23, 3920 (1981) , “Charge transfer Cr3+(3d3)?Cr2+(3d4) in chromium-doped GaAs”, G. Martinez, A. M. Hennel, W. Szuszkiewicz, M. Balkanski, B. ClerjaudResults on the absorption and electron paramagnetic resonance measurements on chromium-doped GaAs are reported. For p-type samples the main optical transitions are shown to be due to a photoionization process which has been measured as a function of temperature and hydrostatic pressure. A model,... (Read more)
- 327. Phys. Rev. B 23, 5335 (1981) , “Deep-level optical spectroscopy in GaAs”, A. Chantre, G. Vincent, D. BoisAn experimental method which we call deep-level optical spectroscopy (DLOS) is described. It is based on photostimulated capacitance transients measurements after electrical, thermal, or optical excitation of the sample, i.e., a diode. This technique provides the spectral distribution of both... (Read more)
- 328. Phys. Rev. B 24, 4571 (1981) , “Tellurium Donors in Silicon”, H. G. Grimmeiss, E. Janzén, H. Ennen, O. Schirmer, J. Schneider, R. Wörner, C. Holm, E. Sirtl, P. Wagner.The electronic properties of chalcogens as dopants in silicon are discussed with emphasis on tellurium. Tellurium give rise to two dominant donor levels which have been studied by junction space-charge techniques, infrared absorption, and ESR. Both donor levels exhibit excited states (Rydberg series... (Read more)
- 329. Jpn. J. Appl. Phys. 20(Suppl.20-1), 261 (1981) , “Isothermal Capacitance Transient Spectroscopy ”, Hideyo Okushi and Yozo TokumaruA new measurement method for deep levels in semiconductors is demonstrated, by which the measurement of the transient charge of capacitance is performed under an isothermal condition (IsothermalCapacitance Transient Spectroscopy). The method allows us to construct a precise measurement and analysis system by a programmable calculator. Detailed experiment and analysis by the method in the case of Au-doped Si indicate that the method is one of useful tools for spectroscopic analysis of deep levels in semiconductors. (Read more)
- 330. J. Chem. Phys. 74, 5436-5448 (1981) , “EPR and ab initio SCF–MO studies of the Si·H–Si system in the E[prime]4" align="middle"> center of -quartz”, J. Isoya, J. A. Weil, L. E. HalliburtonThe E[prime]4" align="middle"> center in irradiated -quartz has been studied by single-crystal EPR. The unpaired electron is shared mainly by two silicon ions Si(1, 2) with the larger fraction on Si(2). The spin-Hamiltonian parameter matrices , 1H,... (Read more)
- 331. J. Appl. Phys. 52, 879-884 (1981) , “Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafers”, E. H. Poindexter, P. J. Caplan, B. E. Deal, R. R. RazoukInterface states and electron spin resonance centers have been observed and compared in thermally oxidized (111) and (100) silicon wafers subjected to various processing treatments. The ESR Pb signal, previously assigned to interface ·SiSi3 defects on (111)... (Read more)
- 332. Defects and radiation effects in semiconductors 19 (1981) , The Institute Physics,London,J. H. Albany , “Theory of silicon vacancy:an Anderson negative-U system”, G.A Braff and E.O Kane and M.schluter
- 333. Defects and radiation effects in semiconductors 199 (1981) , The Institute of Physics,London,J. H. Albany , “Negative-U for point defects in silicon”, G D Watkins,A P Chattaerjee,R D Harris
- 334. Defects and radiation effects in semiconductors 461 (1981) , The Institute of Physics,London, J. H. Albany , “Diffusion coefficient of self-interstitials determined by bulk stacking fault growth in cz silicon”, Kazumi Wada,Naohisa Inoue
- 335. Appl. Phys. Lett. 39, 706 (1981) , “Energy Levels and Solubility of Interstitial Chromium in Silicon”, H. Feichtinger and R. CzaputaThe electronic level of interstitial Cr in silicon according to the transition Cr0i" align="middle">Cr + i" align="middle">(3d63d5) was determined by correlating the electron paramagnetic resonance (EPR) signal of Cr + ... (Read more)
- 336. Appl. Phys. Lett. 39, 747 (1981) , “Optical assessment of the main electron trap in bulk semi-insulating GaAs”, G. M. MartinNear-infrared optical absorption in undoped bulk GaAs ingots is shown to be due essentially to the presence of the main deep donor EL2. Measurement of the corresponding absorption represents the first known method of quantitative determination of that level in semi-insulating material. Furthermore,... (Read more)
- 337. Solid State Commun. 43, 41 (1982) , “The Neutral Divacancy in Silicon”, E. G. Sieverts, J. W. Corbett.Extended Hückel Theory calculations have been carried out on a cluster of silicon atoms to examine the relative stability of two configurations of the divacancy: (1) two vacancies on adjacent sites, i.e. the "normal" divacancy configuration; and (2) two vacancies separated by two... (Read more)
- 338. Solid State Commun. 44, 285-286 (1982) , “Neutron-transmutation doping of GaAs — as studied by ESR”, J. Schneider and U. Kaufmann.Neutron (n0) transmutation doping of GaAs has been monitored by electron spin resonance (ESR). Strong evidence was obtained that, apart from fast neutron impact, AsGa antisite defects are also created by the γ- and β-emissions following thermal n0-capture. The AsGa defects, forming deep... (Read more)
- 339. Solid State Commun. 44, 369-372 (1982) , “Electronic structure calculation of Mn-doped GaAs”, Arnaldo Dal Pino, Jr. Adalberto Fazzio and JoséR. LeiteThe molecular cluster model, within the framework of the self-consistent field multiple scattering Xα method, is applied to calculate the electronic structure of a Mn substitutional impurity in GaAs. The charge states Mn3+, with spin configurations S = 0 and 2, and Mn2+, with S = 5/2, were... (Read more)
- 340. phys. stat. sol. (b) 109, 525 (1982) , “Electron Paramagnetic Resonance of Gold in Silicon. II. Cluster Centres”, M. Höhne.The interpretation of the EPR spectrum suggests two alternative models: five gold atoms or three gold atoms with two boron atoms, respectively, form a cluster occupying lattice sites and adjacent interstitial sites. This cluster tends to further precipitation. Both of the paramagnetic gold-related... (Read more)
- 341. phys. stat. sol. (b) 109, 83 (1982) , “EPR Observation of an Au-Fe Complex in Silicon II Electronic Structure”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, R. L. Kleinhenz, J. W. Corbett.For a description of the Au-Fe complex which is discussed in Part I of this article, a model by Ludwig and Woodbury is adopted. This model does not allow for an analysis of the observed hyperfine interactions in a simple LCAO description. Instead a model of exchange coupled spins is proposed. The... (Read more)
- 342. phys. stat. sol. (b) 112, 695 (1982) , “EPR Investigation of Manganese-Boron Pairs in Silicon”, J. Kreissl, W. Gehlhoff.After manganese doping of low-resistivity B-doped p-silicon an EPR centre is detected, which could be identified in accordance with Ludwig and Woodbury as a manganese-boron pair, where a interstitially incorporated Mn2+ ion is located in the immediate vicinity of a B- ion on a... (Read more)
- 343. phys. stat. sol. (a) 72, 701-713 (1982) , “On the Energy Spectrum of Dislocations in Silicon”, V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth.Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized... (Read more)
- 344. Phys. Rev. Lett. 48, 37 (1982) , “Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon”, K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. WatkinsOptical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a... (Read more)
- 345. Phys. Rev. Lett. 49, 1728 (1982) , “Positive Identification of the Cr4+ → Cr3+ Thermal Transition in GaAs”, D. C. Look, S. Chaudhuri, L. EavesTemperature-dependent Hall-effect measurements on two Cr-doped GaAs samples show a dominant center at E1=0.324-1.4×10-4T eV, with respect to the valence-band edge. By comparison with secondary-ion mass spectroscopy measurements of the Cr concentration, and recent EPR... (Read more)
- 346. Phys. Rev. B 25, 25 (1982) , “Electron Paramagnetic Resonance on Iron-Related Centers in Silicon”, Sara H. Muller, Gijs M. Tuynman, Eric G. Sieverts, and C. A. J. AmmerlaanThe behavior of interstitial iron in high-resistivity dislocation-free silicon has been studied by annealing and by electron irradiation and subsequent annealing. Annealing of iron-doped samples at temperatures above 120°C yielded one, new electron paramagnetic resonance (EPR) spectrum labeled... (Read more)
- 347. Phys. Rev. B 25, 7731 (1982) , “Electron paramagnetic resonance parameters of substitutional Cr2+ impurity in GaAs by a cluster approach”, M. H. de A. Viccaro, S. Sundaram, and R. R. SharmaA cluster treatment incorporating Jahn-Teller distortion and covalency effects has been given for a substitutional Cr2+ impurity in GaAs to interpret the g factors and zero-field splitting parameters. Significant charge-transfer effects have been found to be present in this system. The g... (Read more)
- 348. Phys. Rev. B 26, 2296 (1982) , “Confirmation of the EPR identification of Cr4+ 3d2 in p-type Cr-doped GaAs by means of applied uniaxial stress”, J. J. Krebs and G. H. StaussUniaxial stress has been used to study the isotropic Cr-related EPR center in p-type GaAs: Cr. Stress linearly splits the EPR line into two components, showing that the center is due to substitutional Cr4+ 3d2 rather than interstitial Cr1+ 3d5. The stress... (Read more)
- 349. Phys. Rev. B 26, 6040 (1982) , “Deep-Level Nitrogen Centers in Laser-Annealed Ion-Implanted Silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study dealing with the means for introducing substitutional N into silicon and the structure of N centers is presented in this paper. Nitrogen can be introduced into crystalline silicon by N+ implantation and subsequent pulsed-ruby-laser annealing.... (Read more)
- 350. Phys. Rev. A 25, 1272 (1982) , “Muonium in diamond”, E. Holzschuh, W. Kündig, P. F. Meier, B. D. Patterson, J. P. F. Sellschop, M. C. Stemmet, H. AppelTwo muonium states have been found in diamond. "Normal" muonium shows an isotropic hyperfine interaction with a coupling constant A/h=3711±21 MHz. "Anomalous" muonium is described by a ?111? axially symmetric spin Hamiltonian with coupling constants extrapolated to 0 K |A?|/h=167.98±0.06... (Read more)
- 351. Nucl. Instrum. Methods Phys. Res. 199, 61-73 (1982) , “Comparison of nuclear and optical methods in the study of amorphized semiconductors and insulators”, Gerhard GötzThe damage and amorphization of implanted silicon is reported. The results of backscattering measurements (RBS) are presented and compared with results of optical measurements and EPR investigations. At low implantation temperatures the amount and depth distribution of the damage can be described by... (Read more)
- 352. J. Phys. D: Appl. Phys. 15, L183 (1982) , “Optically active nickel in synthetic diamond”, A. T. Collins, P. M. SpearDiamonds grown using a nickel catalyst-solvent have vibronic absorption systems with zero-phonon lines at 1.883 and 2.51 eV, and show absorption at the Raman frequency (1332 cm-1) in the defect-induced one-phonon absorption spectrum. Circumstantial evidence suggests that these... (Read more)
- 353. J. Phys. C: Solid State Phys. 15, 2059 (1982) , “Uniaxial stress analysis of the 0.79 eV vibronic band in irradiated silicon”, C P FoyThe 0.79 eV system is examined in absorption for the frst time and is found to consist of four lines between 0.79 and 0.8 eV. Uniaxial stress measurements on these four lines are reported and the symmetry of the centre is established as monoclinic I. The relative intensities of the stress-split... (Read more)
- 354. J. Phys. C: Solid State Phys. 15, L981 (1982) , “Carbon-12 hyperfine interaction of the unique carbon of the P2 (ESR) or N3 (optical) centre in diamond”, J. A. van WykThe latest model proposed for the P2 centre shows that the paramagnetic electron is associated mainly with one carbon atom. The observation of the carbon-13 hyperfine interaction with this carbon is reported, and the appropriate hyperfine parameters for this interaction are given. (Read more)
- 355. J. Electrochem. Soc. 129, 2292 (1982) , “Effect of Back-Side Oxidation on B and P Diffusion in Si Directly Masked with Si3N4 Films”, Shoichi Mizuo and Hisayuki HiguchiIt is found that the diffusion of B and P in the front surface of float zone Si wafers is enhanced by oxidation of the back-surfaceof the wafers. The range of diffusion enhancement at 1100°C is found to be much larger than previously reportedvalues; the range increases with oxidation time and the range for B agrees well with that for P. Moreover, the results areconsistent with the findings that B and P diffuse only by interstitials and that the range of oxidation-enhanced diffusion isdetermined by the diffusion of interstitials. (Read more)
- 356. J. Cryst. Growth 59, 357-362 (1982) , “Magnetic resonance studies of shallow donors in zinc oxide”, C. Gonzalez, D. Block, R. T. Cox and A. HervéShallow donors in ZnO were studied by electron spin resonance (ESR) and optically detected magnetic resonance (ODMR). Indium and gallium donors were identified by their hyperfine structure. They have g|| = 1.957 and g = 1.956 and the hyperfine constants are A(69Ga)=4.2 and A(115In)=36.6 G. The ESR... (Read more)
- 357. J. Cryst. Growth 59, 363-369 (1982) , “Electron spin resonance and cathodoluminescence in ZnO”, T. Wada, S. Kikuta, M. Kiba, K. Kiyozumi, T. Shimojo and M. KakehiThe ZnO samples were prepared by firing at 900°C, finely powdered material under different degrees of reduction. Measurements of the green cathodoluminescence (CL) were done by using a vacuum fluorescent display. The g values of ESR spectrum measured from the powders at 77 K were g|| =... (Read more)
- 358. J. Appl. Phys. 53, 4541 (1982) , “Electron paramagnetic resonance of extended defects in semi-insulating GaAs”, A. Goltzene, B. Meyer, and C. SchwabThe temperature dependence, over the 4.2100 K range, of the narrow EPR line, labeled X, with an isotropic value of g = 2.002 has been investigated in a semi-insulating GaAs:Cr sample. From its Curie-Weiss behavior, leading to a (T+13.1)1 law, it is... (Read more)
- 359. J. Appl. Phys. 53, 6140 (1982) , “Identification of AsGa antisites in plastically deformed GaAs”, E. R. Weber, H. Ennen, U. Kaufmann, J. Windscheif, J. Schneider, T. WosinskiAsGa antisite defects formed during plastic deformation of GaAs are identified by electron paramagnetic resonance (EPR) measurements. From photo-EPR results it can be concluded that the two levels of this double donor are located near Ec 0.75 eV and... (Read more)
- 360. J. Appl. Phys. 53, 6788 (1982) , “Diffusion of substitutional impurities in silicon at short oxidation times: An insight into point defect kinetics”, D. A. Antoniadis and I. MoskowitzOxidation-enhanced diffusion of phosphorus, arsenic, and boron and oxidation-reduced diffusion of antimony in silicon have been studied as a function of oxidation time. Data for the early phase of oxidation in dry oxygen from 5 to 60 min have been obtained. Oxidation-enhanced diffusivities show a... (Read more)
- 361. J. Appl. Phys. 53, 9214 (1982) , “Diffusion of indium in silicon inert and oxidizing ambients”, D. A. Antoniadis and I. MoskowitzThe diffusion of indium in silicon at 1000 °C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorous, boron, and arsenic, indium experiences significant oxidation-enhanced diffusion. This result indicates that indium, like the... (Read more)
- 362. Appl. Phys. Lett. 40, 342 (1982) , “Origin of the 0.82-eV electron trap in GaAs and its annihilation by shallow donors”, J. Lagowski, H. C. Gatos, J. M. Parsey, K. Wada, M. Kaminska, and W. WalukiewiczThe concentration of the major electron trap (0.82 eV below the conduction band) in GaAs (Bridgman grown) was found to increase with increasing As pressure during growth. It was further found that (for a given As pressure) the concentration of this trap decreased with increasing concentration of... (Read more)
- 363. Appl. Phys. Lett. 40, 616 (1982) , “Oxidation-enhanced or retarded diffusion and the growth or shrinkage of oxidation-induced stacking faults in silicon”, T. Y. Tan and U. GöseleAn analysis of the conditions for obtaining oxidation-enhanced or retarded dopant diffusions (OED or ORD), in accordance with the stacking fault growth/shrinkage phenomena, is carried out for the oxidation of Si by assuming that vacancy and Si self-interstitials coexist at high temperatures and that... (Read more)
- 364. Appl. Phys. Lett. 41, 251-253 (1982) , “Defects and impurities in thermal oxides on silicon”, K. L. Brower, P. M. Lenahan, and P. V. DressendorferOxides grown at 1100 °C in dry oxygen for 60 min to a thickness of 1350 Å on silicon with and without subsequent forming gas anneals were 60Co irradiated at 4 K with doses up to 106 rad (Si). In situ electron paramagnetic... (Read more)
- 365. Appl. Phys. Lett. 41, 542-544 (1982) , “Effect of bias on radiation-induced paramagnetic defects at the silicon-silicon dioxide interface”, P. M. Lenahan and P. V. DressendorferElectron spin resonance measurements have been made on gamma-irradiated (111) Si/SiO2 structures as a function of bias across the oxide. We observe a large change in the density of radiation-induced paramagnetic Pb centers with bais. We conclude that... (Read more)
- 366. Sov. Phys. Semicond. 17, 412 (1983) , “Excited states of the Fe3+ ion in gallium arsenide and phosphide”, E. S. Demidov, A. A. Ezhevski?, and V. V. Karzanov.
- 367. Sov. Phys. Semicond. 17, 796 (1983) , “Investigation of structure defects in the GaAs:Mn system by the ESR method”, V. F. Masterov, S. B. Mikhrin, B. E. Samorukov, K. F. Shtel'makh
- 368. Solid State Commun. 46, 121 (1983) , “ENDOR Investigation of Tellurium Donors in Silicon”, J. R. Niklas and J. M. SpaethParamagnetic Te+ donors in silicon form deep level impurities. They were investigated with electron nuclear double resonance (ENDOR). The superhyperfine interaction with 12 shells of 29Si nuclei could be determined and it was confirmed that S = 1/2. 10 % of the unpaired spin... (Read more)
- 369. Solid State Commun. 47, 631 (1983) , “Hyperfine Interactions from EPR of Iron in Silicon”, E. G. Sieverts, S. H. Muller, C. A. J. Ammerlaan, E. R. Wever.At high microwave power very well resolved EPR spectra from isolated neutral interstitial iron atoms in silicon can be observed. From these spectra hyperfine interactions with at least three shells of neighbouring lattice sites, containing 18 or 22 atoms, can be determined. The localization of the... (Read more)
- 370. Physica B+C 116, 564-569 (1983) , “Experimental tests of non-thermal effect for pulsed-laser annealing by time-resolved reflectivity and EPR measurements”, K. Murakami, K. Masuda, Y. Aoyagi and S. NambaExperimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductors have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e.,... (Read more)
- 371. Physica B 116, 583-593 (1983) , “Investigations of well defined dislocations in silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. WeberThe velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 <Ï„<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60° dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on Ï„, but also on the elastic strain of the lattice. In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 372. Physica 116B, 219 (1983) , “Negative-U Properties of the Lattice Vacancy in Silicon”, J. L. Newton, A. P. Chatterjee, R. D. Harris, G. D. Watkins.We present direct and unambiguous evidence that the donor levels of the silicon lattice vacancy are inverted in negative-U ordering, as originally suggested by Baraff et al. The second donor level, at Ev + 0.13 eV, lies above the first donor level, at Ev + 0.05 eV. First, we demonstrate that the Ev + 0.13 eV level is a donor state by the absence of the Poole-Frenkel effect in DLTS studies. Second, we describe a detailed EPR study of reactions involving hole transfer via the valence band between the vacancy and the shallow alminium accepter. By monitoring the intensity of the V+ and Also EPR signals, all aspects of the negative-U ordering appear to be confirmed. (Read more)
- 373. Physica 116B, 224 (1983) , “The Negatively Charged Vacancy in Silicon: Hyperfine Interactions from ENDOR Measurements”, M. Sprenger, S. H. Muller, C. A. J. Ammerlaan.The negatively charged lattice vacancy V- was produced in p-type aluminum doped silicon by 1.5 MeV electron irradiation at temperatures below 20 K. The Si-G2 EPR spectrum, which is associated with the negative charge state of the lattice vacancy, was investigated by electron nuclear double resonance. Hyperfine interactions between the unpairerd defect electron and 29Si nuclei on various lattice sites with respect to the vacancy were determined in order to obtain detailed information about the electron wave function. By symmetry, there are four distinguishable classes of hyperfine interaction tensors. Values for the contact term of the hyperfine interactions are reported for 27 shells containing 73 atoms. The one-electron LCAO scheme to describe the electron wave function is discussed. Also, the extension and shape of the defect electron distribution is discussed in an empirical manner. (Read more)
- 374. Physica 116B, 258 (1983) , “Origin of the 0.97 eV Luminescence in Irradiated Silicon”, K. P. Odonnell, K. M. Lee, G. D. Watkins.Optical detection of magnetic resonance studies are described for the well-studied optical center with zero phonon line at 0.97 eV in irradiated silicon. Analysis of the S = 1 ODMR spin Hamiltonian reveals a low symmetry (C1h) center and a resolved 29Si hyperfine interaction with a single silicon atom. In a specially enriched 13C doped sample we find additional hf interactions with two equivalent carbon atoms. At elevated temperatures, the defect reorients easily from one C1h distortion to another around a common <111> axis; during this reorientation the spin density remains located on the same silicon atom and the same carbon pair. Froom these results we construct a model comprising two adjacent (substitutional) carbon atoms and an interstitial silicon atom which has distorted out from a bond-centered position We conclude that the same defect gives rise to the Si-G11 EPR spectrum when positively charged. (Read more)
- 375. Physica 116B, 281 (1983) , “Excited Triplet States of Defects and Optical Nuclear Polarization in Silicon”, L. S. Vlasenko.Using the nuclear magnetic resonance (NMR) and electron spin resonance (ESR) techniques the processes of the optical polarization of the electron and nuclear spinis have been studied iin silicon containing the structure defects of various kinds. It has been established that such structure defects as radiation defects, thermal defects, nad dislocations to be under illumination in photo-excited triplet states with nonequilibrium spin polarizaton are respoonsibke for the appearance of the strong nuclear polarization independent on the light polarization. (Read more)
- 376. Physica 116B, 306 (1983) , “ESR of Fe-S Pairs in Silicon”, O. F. Schirmer.The ESR of a new Fe-S center in Si is reported. It is shown that the g-values of three of the known Fe-S pairs are determined by exchange interaction of the angular momentum of Feio with that of a nearby S = 1/2 ion, which is likely to be S+ or (S-S)+. The analysis uses an analogy to the O2--centers in the alkali halides. Orbach relaxation of the ESR of the new Fe-S center shows that an excited state lines 8.4 meV above the groundstate. (Read more)
- 377. Physica 116B, 332 (1983) , “The Structure of the Pt- Center in Silicon”, J. C. M. Henning.Electron spin resonance (ESR), strain-moduled electron spin resonance (SMESR) and infrared absorption (IR) experiments are reported on the platinum accepter (Pt-) in silicon. It turns out that in the concentration range 1016 < [Pt] < 1017 cm-3 Pt is exclusively present as substitutional-interstitial (Ptb-Pti) pairs. In n-type material the charge state may be either Pt--Ptio or Ptso-Ptio, depending on the Fermi energy. (Read more)
- 378. Physica 116B, 564 (1983) , “Experimental Tests of Non-Thermal Effect for Pulsed-Laser Annealing by Time-Resolved Reflectivity and EPR Measurements”, K. Murakami, K. Masuda, Y. Aoyagi, S. Namba.Experimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductor have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e, a reflectivity dip appears after the disappearance of the high reflectivity phase, concomitant with final production of a new amorphous GaAs state. This result cannot be interpreted in terms of the simple thermal effect. The other is EPR measurement of Si samples which are implanted and then annealed by 40-ns pulsed laser. No EPR results of N donors in Si support positively a non-thermal effect, while it is difficult to explain EPR results of laser-induced paramagnetic defects only by the simple thermal annealing model. (Read more)
- 379. Physica 116B, 583 (1983) , “Investigations of Well Defined Dislocations in Silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. Weber.The velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420ºC in the resolved shear stress range 30<τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60º dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on Ï„, but also on the elastic strain of the lattice. In the second part the paper reviews EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 380. Physica 117B&118B, 9 (1983) , “Deep Levels in Semiconductors”, G. D. Watkins.The 3d transition element ion impurities in silicon are reviewed for the broad insight they provide in understanding deep levels in semiconductors. As interstitials, their interaction with the host tends to confine the d-levels to the forbidden gap, providing many deep states. The interaction at the substitutional site is best considered as an interaction tends to repel deep a1 and t2 levels from the gap. When the levels are present, they are mostly vacancy-like and the defect is likely to display the large lattice relaxations characteristic of the vacancy. (Read more)
- 381. phys. stat. sol. (b) 115, 443 (1983) , “EPR of Iron-Boron Centres in Silicon”, W. Gehlhoff, K. H. Segsa.The EPR spectra of one type of iron-boron centres detected in low-resistivity B-doped p-silicon after iron doping are investigated in detail. The spectra are characterized by a dominating zerofield splitting and a resolved SHF structure due to the interaction with the boron isotopes and arise from... (Read more)
- 382. phys. stat. sol. (b) 119, K117 (1983) , “Gold-related EPR centres of low symmetry in silicon”, M. Höhne.The most important gold-related centre in silicon works incognito: It produces levels which are well known /1/. The acceptor level EC-0.55 eV and the donor level EV+0.35 eV are caused by different states of the same defect, as was als orecentlr affirmed /2, 3/. This defect is... (Read more)
- 383. phys. stat. sol. (a) 75, 473 (1983) , “Eigenschaften einiger störstellenkomplexe von gold in silizium”, H. LemkeThe properties of some ion pairs between donorsor doubke donors of the 3d-group and the acceptor gold are investigated by DLTS-and TSCa-techniques. The pair (Fe+Au-) is an accepter at Ec - 0.34 eV with rcn = 3 × 10-8... (Read more)
- 384. Phys. Rev. Lett. 51, 130 (1983) , “Electron Spin Resonance on GaAs-AlxGa1-xAs Heterostructures”, D. Stein, K. v. Klitzing, G. WeimannPhotoconductivity measurements on GaAs-AlxGa1-xAs heterostructures with photon energies 0.05 meV<hν<0.14 meV show resonance structures with a half-width of less than 0.002 meV in the magnetic field range 3 T<B<8 T. The resonances are only observed at magnetic... (Read more)
- 385. Phys. Rev. Lett. 51, 423 (1983) , “Creation of Quasistable Lattice Defects by Electronic Excitation in SiO2”, Katsumi Tanimura, Takeshi Tanaka, and Noriaki ItohThe transient volume change of ?-quartz and fused silica induced by irradiation with an electron pulse has been measured above 80 K. It is shown that transient changes of volume and optical absorption due to the E1? centers (oxygen vacancies) decay in parallel and that the... (Read more)
- 386. Phys. Rev. Lett. 51, 427 (1983) , “Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors”, M. C. Chen and D. V. LangThe first observation of spin-dependent thermal emission from a deep gap state in a semiconductor is reported. As a result the silicon dangling-bond defects at the Si/SiO2 interface can be directly correlated with a 0.36-eV-deep hole trap. (Read more)
- 387. Phys. Rev. B 27, 4002 (1983) , “Strain-Modulated ESR Study of Pt- in Silicon”, J. C. M. Henning, E. C. J. Egelmeers.Early electron-spin-resonance (ESR) studies by Woodbury and Ludwig on the Pt acceptor in Si have been refined and extended. The strain dependence of the spectroscopic splitting tensor g? has been measured using the strain-modulated electron-spin-resonance technique. The symmetry of the center proves... (Read more)
- 388. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 389. J. Phys. C: Solid State Phys. 16, 1501 (1983) , “Electron spin resonance of a di-nitrogen centre in Cape yellow type Ia diamonds”, J. A. van Wyk, J. H. N. LoubserA di-nitrogen centre has been observed in gem quality Cape yellow diamonds while illuminated with ultraviolet light. Analysis of the spectrum shows that the paramagnetic electron is localised on two neighbouring nitrogens along (111) directions, which suggests that it is most likely a derivative of... (Read more)
- 390. J. Phys. C: Solid State Phys. 16, 6197 (1983) , “Self-diffusion in intrinsic germanium and effects of doping on self-diffusion in germanium”, G Vogel, G Hettich and H MehrerSelf-diffusion in intrinsic germanium single crystals has been investigated over the temperature range 822-1163K using 71Ge as radioisotope and a sputtering technique for serial sectioning. The data can be described by a preexponential factor of (2.48±0.6)×10-3 m2... (Read more)
- 391. J. Phys. C: Solid State Phys. 16, L667 (1983) , “Self-interstitials and thermal donor formation in silicon: new measurements and a model for the defects”, R C Newman, A S Oates and F M LivingstonSilicon containing oxygen (1018 cm-3) and carbon (7×1017 cm-3) has been heated at 450 degrees C for times up to 600 h to generate thermal donors. Measurements indicate that for every two oxygen atoms that are precipitated there is generation of one... (Read more)
- 392. J. Non-Cryst. Solids 58, 165-178 (1983) , “Electron paramagnetic resonance of Cu2+ and V4+ ions in borate glasses”, L. D. Bogomolova , V. A. JachkinThe EPR spectra of Cu2+ and V4+ ions have been studied in binary RO---B2O3 glasses (where R = Ba, Sr, Pb and Zn) and in ternary PbO---ZnO---B2O3 glasses. The main results of an EPR study of alkali-borate glasses are briefly reviewed. Three distinct EPR spectra of Cu2+ ions in barium-borate glasses... (Read more)
- 393. J. Electrochem. Soc. 130, 1942 (1983) , “Effects of Back-Side Oxidation of Si Substrates on Sb Diffusion at Front Side”, S. Mizuo and H. HiguchiThe effect of back-side oxidation of Si wafers on the diffusion of Sb in the front of wafers is investigated with back-side selective oxidation (BSO) at 1100ºC in dry O2 ambients. It is found that the diffusion of Sb in the front of the wafers is retarded by BSO only for FZ Si substrates under directly formed Si3N4 films, and that Sb diffusion in CZ Si substrates and under double-layered SiO2-Si3N2\4 films in both FZ and CZ substates is not affected by BSO. The effective range over which BSO affects Sb diffusion is found to increase with oxidation time. The range and extent of oxidation retarted diffusion (ORD) for Sb are shown to agree with those of oxidation enhanced diffusion (OED) for B and P. These results are explained with a proposed model:(i) there is a thermal equilibrium between vacancies and interstitials, and(ii) the Si-SiO2 interface provides sinks and generation centers for point defects in Si, though the Si-Si3N4 interface does not react with point defects. (Read more)
- 394. J. Appl. Phys. 54, 161 (1983) , “Quantitative measurements of recombination enhanced dislocation glide in gallium arsenide”, Koji Maeda, Miwa Sato, Akihisa Kubo, and Shin TakeuchiEffects of 30-keV electron-beam irradiation on dislocation glide were investigated for - and -dislocations in bulk n-GaAs single crystals by cathodoluminescence microscopy using a scanning electron microscope with a bending apparatus in it. At high temperatures above... (Read more)
- 395. J. Appl. Phys. 54, 179-183 (1983) , “The Mechanism of the Enhancement of Divacancy Production by Oxygen During Electron Irradiation of Silicon. II. Computer Modeling”, G. S. Oehrlein, I. Krafcsik, J. L. Lindström, A. E. Jaworowski, and J. W. CorbettNumerical tests of possible models for the oxygen dependence of the divacancy introduction rate in silicon electron irradiated at room temperature were performed on a computer. Only the model in which oxygen traps Si self-interstitials can reproduce all the experimental data. Our modeling results... (Read more)
- 396. J. Appl. Phys. 54, 3860 (1983) , “Effect of Si and SiO2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si”, Shoichi Mizuo, Takahisa Kusaka, Akira Shintani, Mitsuo Nanba, and Hisayuki HiguchiThe effect of thermal nitridation on impurity diffusion and Oxidation induced Stacking Fault size in Si are clarified by selective nitridation. Enhanced B and P diffusion, retarded Sb diffusion, and growth of OSF's are found in Si masked with SiO2 films. Retarded B and P diffusion,... (Read more)
- 397. J. Appl. Phys. 54, 6594 (1983) , “Electron Spin Resonance Study of Oxygen Donors in Silicon Crystals”, M. Suezawa, K. Sumino, M. Iwaizumi.Measurements have been conducted on the electron spin resonance due to various types of oxygen donors (thermal, new, and deformation-induced donors) in Czochralski-grown silicon crystals of n type. g tensors determined for these donors all coincide well with that for phosphorus, the... (Read more)
- 398. IEEE Transactions on Electron Devices ED-30, 321 (1983) , “Positive Feedback Model of Defect Formation in Gradually Degraded GaAlAs Light Emitting Devices”, KAZUO KONDO, OSAMU UEDA, SHOJI ISOZUMI, SHIGENOBU YAMAKOSHI, KENZO AKITA, TSUYOSHI KOTANI
- 399. Appl. Phys. Lett. 42, 448 (1983) , “Observation of oxidation-enhanced and oxidation-retarded diffusion of antimony in silicon”, T. Y. Tan and B. J. GinsbergAn experiment was carried out to study oxidation-enhanced and oxidation-retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2 at 1160 °C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model... (Read more)
- 400. Appl. Phys. Lett. 42, 690 (1983) , “Self-interstitial and vacancy contributions to silicon self-diffusion determined from the diffusion of gold in silicon”, F. Morehead and N. A. Stolwijk, W. Meyberg, and U. GöseleWe present an analysis of gold diffusion profiles in silicon taking into account that both self-interstitials and vacancies are present at thermal equilibrium. We find that at 1000 °C the contribution of self-interstitials to silicon self-diffusion is about equal to that of vacancies. Applied... (Read more)
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