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- 201. Phys. Rev. B 12, 4383 (1975) , “Defects in Irradiated Silicon: EPR of the Tin-Vacancy Pair”, G. D. Watkins.An EPR spectrum, labeled Si-G29, is identified as a lattice vacancy trapped by substitutional tin. The resulting tin-vacancy pair is observed in its neutral ground state with S=1. Studies versus wavelength of illumination indicate that it has a donor level at ?Ev+0.35 eV. Analysis of the... (Read more)
- 202. Phys. Rev. B 12, 5824 (1975) , “Defects in Irradiated Silicon: EPR and Electron-Nuclear Double Resonance of Interstitial Boron”, G. D. Watkins.An EPR spectrum, labeled Si-G28, is identified as arising from neutral interstitial boron in silicon. It is produced by 1.5-MeV electron irradiation at 20.4K, presumably when a substitutional boron atom traps a mobile interstitial silicon atom which is produced in the original damage event. Three... (Read more)
- 203. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the V= charge state. The vacancy has four charge states, V+, V0, V- and V=. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and V- are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 204. Lattice Defects in Semiconductors 23, 126-148 (1975) , Institute of Physics, London , “Lattice Defects in Ion-Implanted Semiconductors”, L. C. Kimerling, J. M. Poate.This paper summerizes the current status of ion implantation damage research in semiconductors. We have attempted to review the recent interesting measurements and theories. the damage process is traced from the production mechanism to the structural and electrical properties of the defects and their annealing characteristics. Defect-impurity interactions and lattice site location of the implanted ion are discussed. New areas of research such as enhanced diffusion, gettering and mixing phenomena are discussed.
- 205. Lattice Defects in Semiconductors 23, 433-438 (1975) , Institute of Physics, London , “The EPR Spectra in Silicon with Dislocations”, H. Alexander, M. Kenn, B. Nordhofen, E. Weber.Plastic deformation introducing about 109cm-2 dislocations in silicon gives rise to a complex EPR signal. It consists of a group of central lines around g = 2 and a zero field splitting multiplet of 14 pairs of lines. At low temperature (≤30 K) the g tensor of the four most prominent central lines was determined. The lines belong to the same (broken bond type) centre Si-K1 in diffeerent orientations. The axes of this centre are oriented in an unusual manner. beginning at 60 K additional central lines appear, one of which can be ascribed to the existence of dangling bonds normal to the glide plane of the dislocations. The fine structure multiplet is due to a centre (Si-K2) with its g axes parallel to [011],[011],[100];[011] is the direction of the Burgers vector of most of the dislocations and the axis of a nearly axially symmetric D tensor. The splitting parameter changes strongly with temperature between 60 K and 225 K, where the multiplet disappears. Possible causes for the splitting are discussed.
- 206. Jpn. J. Appl. Phys. 14, 544 (1975) , “Study of Defects Introduced by Ion Implantation in Diamond”, J. -F. Morhange, R. Beserman, J. C. BourgoinNatural type IIa diamonds have been implanted with 70 keV carbon, nitrogen and boron ions. The behaviour of the defects introduced is monitored using electron paramagnetic resonance, absorption, luminescence and Raman scattering measurements. We first describe and discuss the applicability of these... (Read more)
- 207. Z. Physik B 23, 171-181 (1976) , “Intrinsic Defects in Electron Irradiated Zinc Oxide”, B. Schallenberge, A. Hausmann
- 208. Sov. Phys. Solid State 18, 1883 (1976) , “Spin-lattice relaxation of a Jahn-Teller nitrogen center in diamond”, I. M. Zaritskii, V. Ya. Bratus, V. S. Vikhnin, A. S. Vishnevskii, A. A. Konchits, V. M. Ustintsev
- 209. Sov. Phys. Solid State 18, 190 (1976) , “EPR of Phosphorus in Silicon”, P. Swarup, P. L. Trivedi.Experimental values of the exchange integral are presented for phosphorus-doped silicon, at various phosphorus concentration, and are compared with the theory. It is shown that the observed temperature dependence of the EPR linewidth in these samples can be attributed to a phonon-induced admixture of excited states to the ground state of the impurity center. The proposed mechanism is compared with the mechanism of dynamic narrowing due to hopping. We have analyzed the EPR spectra of silicon single crystals doped with phosphorus in the concentration range from 2・1017 to 2・1018 cm-3, at temperatures from 2º to 20ºK.1 It was observed that the EPR line of phosphorus has a Lorentz shape at all concentrations and temperatures. Estimates of the exchange integrals at various impurity concentrations were obtained from the experimental data on the EPR linewidth. It is shown that the temperature dependence of the linewidth confirms the conclusion that an admixture of excited orbital states of the impurity centers to the ground state is induced by the phonons and that the exchange integral depends on temperature. The proposed mechanism is compared with the mechanism of dynamic narow connected with hopping.2
- 210. Sov. Phys. Semicond. 10, 1339 (1976) , “Radiation Damage in Silicon Resulting from Complete Stopping of 30 MeV Protons”, Yu. V. Gorelkinski?, V. O. Sigle, V. A. Botvin.The ESR method was usedin a study of radiation defects created in single-crystal silicon by 30 MeV protons. The distribution of the paramagnetic centers was determined as a function of the proton energy between 30 and ~10 MeV. It was established that in this range of energies the rates of introduction of centers with high (~10 keV) and low (~100 eV) threshold energies of formation were independent of the proton energy. The structure of the radiation damage was determined by investigating the ESR spectra of samples with high phosphorus concentrations (~1017-1018 cm-3) after irradiation with various proton doses. For comparison, measurements were made also on silicon samples irradiated with fast reactor neutrons. The probabilities of formation of disordered regions by recoil nuclei of energies exceeding ~10 keV were approximately equal in the proton (30 MeV) and neutron irradiation cases. However, when silicon was bombarded with protons, about 80% of the divacancies (Si-G7 centers) formfed were located outside the disordered regions.
- 211. Sov. Phys. Semicond. 10, 637 (1976) , “Influence of oxygen on properties of gallium arsenide doped with transition metals”, D. G. Andrianov, . M. Omel'yanovski?, E. P. Rashevskaya, N. I. Suchkova
- 212. Sov. Phys. Semicond. 10, 899 (1976) , “Influence of the potential relief in gallium arsenide on optical charging of paramagnetic centers”, D. P. Erchak, V. F. Stel'makh, V. D. Tkachev, G. G. Fedoruk
- 213. Solid-State Electronics 19, 611 (1976) , “Thermal Emission Rates and Activation Energies of Electrons at Tantalum Centers in Silicon”, Kenji Miyata and C. T. SahThe thermal emission rates and activation energies of electrons trapped at the two Ta donor centers in n-type silicon are determined from transient capacitance measurements on Schottky barrier diodes made on phosphorus and tantalum doubly doped silicon crystals. The thermal activation energies are... (Read more)
- 214. Solid State Commun. 20, 143-146 (1976) , “Deep traps in semi-insulating GaAs: Cr revealed by photo-sensitive ESR”, U. Kaufmann and J. SchneiderThe Cr+ ESR spectrum has been observed in GaAs: Cr after near i.r. excitation. The ESR photo-excitation and quenching spectra are used to establish a model for the Cr centers which is consistent with photoconductivity, photo-thermopower, and photocapacitance studies as well as with optical... (Read more)
- 215. Solid State Commun. 20, 881 (1976) , “ESR in Iron Doped Silicon Crystals under Stress”, M. Berke, E. Weber and H. AlexanderH. Luft and B. ElschnerThe spin lattice coefficients C11 and C44 characterizing the crystal field under stress are measured for neutral iron at interstitial sites in silicon. The coefficients are one order of magnitude larger than for Fe3+ in MgO. Both C11 and C44 turn out to be negative. (Read more)
- 216. Radiat. Eff. 29, 7 (1976) , “Photo-EPR Experiments on Defects in Irradiated Silicon”, Y. H. Lee, T. D. Bilash, J. W. Corbett.The defect electrical levels for eight EPR spectra (Si-A10, -A14, -A15, -A16, -G7, -G16, -P2, -P4) are determined from optical bleaching experiments via electron paramagnetic resonance. The defect energy levels are all located near the middle of the band gap in between Ec -0.40 eV and Ev +0.40 eV.
- 217. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 218. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 219. Phys. Rev. B 13, 2653 (1976) , “EPR Studies of Defects in Electron-Irradiated Silicon: A Triplet State of Vacancy-Oxygen Complexes”, Young-Hoon Lee and James W. CorbettThree new EPR spectra (Si-A 14, -A 15,and-A 16) and two previously known spectra (Si-P2and-P4) are observed for the first time in electron-irradiated silicon. The microscopic defect models are established as multivacancy-oxygen complexes with the oxygen(s) in Si-O-Si structure inside the ... (Read more)
- 220. Phys. Rev. B 14, 3494 (1976) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double Resonance Measurements”, J. G. de Wit, E. G. Sieverts, and C. A. J. AmmerlaanThe Si-G6 EPR spectrum, which is associated with the positive charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine tensors describing the interaction between the unpaired divacancy electron and 29Si nuclei were determined. With these... (Read more)
- 221. Phys. Rev. B 14, 4506 (1976) , “EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial”, Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. CorbettThe Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)
- 222. Phys. Rev. B 14, 872-883 (1976) , “EPR of a <001> Si interstitial complex in irradiated silicon”, K. L. Brower.This paper deals with an electron-paramagnetic-resonance study of the Si-B3 center, which was first reported by Daly. The Si-B3 center is a secondary defect which forms upon annealing between 50 and 175C in irradiated boron-doped silicon and is stable up to ?500C. Our studies indicate that the... (Read more)
- 223. Phys. Lett. A 59, 238 (1976) , “An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 110 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment... (Read more)
- 224. J. Phys. Soc. Jpn. 41, 711 (1976) , “Electron Spin Relaxation Time of Phosphorus-Doped Silicon”, H. Nagashima, H. Yamazaki.The decay time of induced magnetization Mz of donor electrons is observed for (Si:P) samples having impurity concentrations 5.6×1017 ≤ Nd 2.7×1018 donors / cm3 in the 1.2-4.2 K temperature range. The results show that the spin-lattice relaxation time T1 increases with increasing donor concentration and becomes so close to the spin-spin relaxation time T2 in the intermediate concentration region of transport phenomena. (Read more)
- 225. J. Magn. Res. 21, 387 (1976) , “The Divacancy in Silicon: Spin-Lattice Relaxation and Passage Effects in Electron Paramagnetic Resonance”, C. A. J. Ammerlaan, A. van der Wiel.The longitudinal spin-lattice relaxation time T1 of the divacancy in silicon, in its positively charged state, was determined in the temperature region between 10 and 30 K. The study was made by measuring the line shape and amplitude of the electron paramagnetic resonance spectrum of V+2 (the Si-G6 spectrum) in a static magnetic field of 8.24 kOe. the passage conditions in observing the resonances were varied through the transition from adiabatic fast (ωmT1 > 1) to adiabatic slow (ωmT1 < 1) with respect to the audiofrequency (ωm) modulation field. Explicit formulas are derived to describe line shape and amplitude of the resonance in the transition region around ωmT1 = 1. The spin-lattice relaxation time found is given by T1(s) = 3.4 × 105 × T(K)-6.6, which demonstrates that the Raman two-phonon process is the active relaxation mechanism..
- 226. J. Lumin. 12-13, 441-445 (1976) , “ESR and luminescence of trapped hole centers in ZnO and SnO2”, E. Mollwo , D. ZwingelIn SnO2 single crystals acceptor centers are found upon incorporation of Al3+ and Ga3+ ions at cation sites. After UV-excitation, holes, trapped at these centers, give rise to polarized luminescence and thermoluminescence. The structure of the centers is analysed by ESR and compared with similar... (Read more)
- 227. Appl. Phys. Lett. 29, 265 (1976) , “EPR Evidence for a Positively Charged Vacancy-Oxygen Defect in Silicon”, Paul R. BrosiousA new EPR spectrum, labeled Si-I3, has been observed in electron-irradiated n-type Czochralski silicon illuminated with approximately band-gap light. The g-tensor symmetry, the g shifts from the free-electron value, and the temperature dependence of the spectrum amplitude lead to the... (Read more)
- 228. Appl. Phys. Lett. 29, 461 (1976) , “Dislocation climb model in compound semiconductors with zinc blende structure”, P. M. Petroff and L. C. KimerlingA new dislocation climb model is proposed for compound semiconductors with the zinc blende structure. Within the model a supersaturation of only one type of point defect is needed for the dislocation climb process. Consideration of the forces involved suggest that in compound semiconductors grown by... (Read more)
- 229. Appl. Phys. Lett. 29, 605 (1976) , “Observation and analysis of very rapid optical degradation of GaAs/GaAlAs DH laser material”, B. Monemar and G. R. WoolhouseWe have observed and analyzed a very rapid form of degradation caused by the optical excitation of GaAs/GaAlAs DH laser material. It consists of the very rapid (50 µ/sec) development of 110-oriented lines originating at a mechanically damaged area and restricted to the optically excited area.... (Read more)
- 230. Sov. Phys. Solid State 19, 100 (1977) , “Impurity states of iron group ions in gallium arsenide and silicon”, E. S. Demidov
- 231. Sov. Phys. Semicond. 11, 426 (1977) , “Magnetic and optical properties of Ni3+ and Co2+ ions of 3d7 configuration in gallium arsenide”, D. G. Andrianov, N. I. Suchkova, A. S. Savel'ev, E. P. Rashevskaya, M. A. Filippov
- 232. Solid State Commun. 22, 767 (1977) , “ESR STUDIES OF DIAMOND POWDERS”, J. H. N. LoubserThe ESR spectrum of two defect centres were observed in finely ground diamond powders (0.5 to 30 μm size). The one centre has been seen before in irradiated and annealed single crystals of natural diamonds (the O1 centre) while the second one has only been seen in synthetic diamonds grown from... (Read more)
- 233. Rev. Sci. Instrum. 48, 135-141 (1977) , “EPR Techniques for Studying Defects in Silicon”, K. L. Brower.Due to long spin-lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010... (Read more)
- 234. Radiation Effects in Semiconductors 31, 174-185 (1977) , Institute of Physics, Bristol , “Heavy-Dose Ion Implantation”, K. Masuda.
- 235. Radiation Effects in Semiconductors 31, 213-220 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of New Defects in Heavily Phosphorus-Doped Silicon after Electron Irradiation”, E. G. Sieverts, C. A. J. Ammerlaan.
- 236. Radiation Effects in Semiconductors 31, 266-271 (1977) , Institute of Physics, Bristol , “Electron Paramagnetic Resonance of Point Defects in Deformed Silicon”, E. Weber, H. Alexander.
- 237. phys. stat. sol. (a) 39, 11 (1977) , “Photoelectric Spectroscopy - A New Method of Analysis of Impurities in Semiconductors”, Sh. M. Kogan, T. M. Lifshits1. Introduction 2. The photothermal ionization of impurities in semiconductors 3. The excitation energies of impurities in germanium and silicon 4. The analysis of impurities in crystals 4.1 Germanium 4.2 Silicon 4.3 Gallium arsenide 4.4... (Read more)
- 238. phys. stat. sol. (a) 41, 637 (1977) , “EPR of a Carbon-Oxygen-Divacancy Complex in Irradiated Silicon”, Y. H. Lee, J. W. Corbett, K. L. Brower.Additional EPR experiments on the Si-G15 spectrum, previously observed in p-type, pulled silicon after electron irradiation, are described. The hyperfine interaction with the 29Si nuclei and the quenched-in defect alignment under uniaxial stress are newly observed. A correlation is made... (Read more)
- 239. phys. stat. sol. (a) 41, K21 (1977) , “Anisotropic Broadening of Linewidth in the EPR Spectrum of Fe0 in Silicon”, W. Gehlhoff, K. H. Segsa.Measurements of temperature dependances of the Hall coefficient and resistivity in iron doped sillicon crystals slow that iron acts as a donor impurity, introducing a converts to a donor level 0.4 eV from the valence band. This level is unstable at room temperature and converts to a donor level 0.55... (Read more)
- 240. Phys. Rev. B 15, 17 (1977) , “EPR of Cr(3d3) in GaAsevidence for strong Jahn-Teller effects”, J. J. Krebs and G. H. StaussThe X-band EPR spectrum of Cr3+(3d3) has been observed in semi-insulating Cr-doped GaAs at 5 K. The Cr is assumed to be substitutional for Ga. The S=3 / 2 center has an orthorhombic (C2ν) symmetry spin Hamiltonian... (Read more)
- 241. Phys. Rev. B 15, 3836 (1977) , “Defect Energy Levels in Boron-Doped Silicon Irradiated with 1-MeV Electrons”, P. M. Mooney, L. J. Cheng, M. Sli, J. D. Gerson, and J. W. CorbettUsing transient capacitance spectroscopy, we studied defect energy levels and their annealing behavior in boron-doped silicon of various resistivities irradiated with 1-MeV electrons at room temperature. Three levels located at Ev+0.23, Ev+0.38, and Ec-0.27 eV... (Read more)
- 242. Phys. Rev. B 15, 816 (1977) , “Optical detection of conduction-electron spin resonance in GaAs, Ga1-xInxAs, and Ga1-xAlxAs”, Claude Weisbuch and Claudine HermannThe optical detection of conduction-electron spin resonance (CESR) is performed in GaAs, Ga1-xInxAs, and Ga1-xAlxAs alloys. The measured g factor of GaAs is g*=-0.44±0.02. The good precision obtained permits a fruitful comparison with theory.... (Read more)
- 243. Phys. Rev. B 16, 971 (1977) , “EPR of Cr2+ (3d4) in gallium arsenide: Jahn-Teller distortion and photoinduced charge conversion”, J. J. Krebs and G. H. StaussThe spin-Hamiltonian parameters and low-temperature behavior of Cr2+ in GaAs are found to correspond closely to those in II-VI zinc-blende compounds, suggesting the occurrence of a static Jahn-Teller distortion. Observation of photoinduced charge conversion among Cr2+,... (Read more)
- 244. Phys. Rev. B 16, 974 (1977) , “EPR study of Fe3+ and Cr2+ in InP”, G. H. Stauss, J. J. Krebs, and R. L. HenryAt 4.5 K, Fe3+ (3d5) displays a cubic-symmetry EPR spectrum in InP similar to that in related III-V semiconductors, with parameters g=2.0235(10) and a=+221(2)×10-4 cm-1. Optical transitions near 0.75 and 1.13 eV produce transient decreases in the... (Read more)
- 245. Phys. Lett. A 60, 355-357 (1977) , “Hyperfine structure in the EPR spectrum of O−2 on GaAs surfaces”, D. J. Miller , D. HanemanIt is shown that a previous interpretation of hyperfine structure in the O−2 — GaAs surface EPR spectrum is incorrect. The experimental spectrum is reproduced and re-interpreted in a consistent way. The surface Ga orbital is almost entirely p-like. (Read more)
- 246. Phys. Lett. A 60, 55 (1977) , “Oxygen-vibrational bands in irradiated silicon*1”, Y. H. Lee, J. C. Corelli, J. W. Corbett.A correlation is made between the EPR spectra and the IR absorption bands for the known multivacancy-oxygen complexes in irradiated silicon. (Read more)
- 247. Jpn. J. Appl. Phys. 16, 233 (1977) , “Injection-Enhanced Dislocation Glide under Uniaxial Stress in GaAs-(GaAl)As Double Heterostructure Laser”, Taibun Kamejima, Koichi Ishida, Junji MatsuiBy applying uniaxial stresses of the order of 108-9 dyn/cm2 to (GaAs-(GaAl)As DH lasers in addition to the forward bias current, the development of <110> straight dark lines is observed in the electron beam induced junction current mode using an SEM. They are identified... (Read more)
- 248. J. Phys. Soc. Jpn. 43, 1286 (1977) , “Phase Diagram of an Exciton in the Phonon Field ”, Atsuko SumiIt is shown that an electron and a hole interacting mutually through the Coulomb force in the acoustic-phonon field take, within the adiabatic approximation, four possible phases depending upon the coupling constants: the lowest state is the free exciton in phase[I], the large-radius self-trapped... (Read more)
- 249. J. Appl. Phys. 48, 3950 (1977) , “Defect structure of 100 dark lines in the active region of a rapidly degraded Ga1–xAlxAs LED”, Osamu Ueda, Shoji Isozumi, Tsuyoshi Kotani, and Toyoshi YamaokaThe 100 dark-line defects (DLD's) in the active region of a rapidly degraded Ga1xAlxAs LED were observed by transmission electron microscopy (TEM). Dislocation networks, which contain dislocation dipoles and a number of dislocation loops, were associated... (Read more)
- 250. IEEE J. Quantum Electron. QE-13, 564 (1977) , “The New Origin of Dark-Line Defects in Planar-Stripe DH Lasers”, HIDEO SAITO, TSUYOSHI KAWAKAMI
- 251. Appl. Phys. Lett. 30, 368 (1977) , “The origin of dislocation climb during laser operation”, S. O'Hara, P. W. Hutchinson, P. S. DobsonThe origin of the dislocation climb which takes place in the presence of electron-hole recombination in laser structuresis discussed. TEM studies on lasers which have been degraded by either forward bias or by optical pumping show that the climb dipoles are extrinsic in both cases. In addition,... (Read more)
- 252. Appl. Phys. Lett. 31, 142 (1977) , “EPR of a Thermally Induced Defect in Silicon”, Y. H. Lee, R. L. Kleinhenz, and J. W. CorbettTwo EPR spectra are resolved in quenched silicon; one is attributed to a surface damage formed during the quench and the other to the interstitial iron (Fe0) previously identified by Woodbury and Ludwig in Fe-diffused silicon. The enthalpy and entropy for the Fe0 formation are... (Read more)
- 253. Surf. Sci. 75, 681-688 (1978) , “EPR centres at a gas-solid interface induced by a microwave gas plasma”, B. P. Lemke and D. HanemanDetails are reported for EPR centres induced in various samples after operating a cyclotron resonance type gas discharge inside a vacuum envelope within a microwave cavity. In the case of vacuum crushed GaAs, centres identified as O−3 were induced on the surfaces at 100 K. The powder... (Read more)
- 254. Sov. Phys. Solid State 20, 178 (1978) , “Influence of temperature on spin-spin interaction of nitrogen and nickel centers in diamond”, V. K. Bezobchuk, A. B. Brik, I. V. Matyash, Yu. V. Fedotov
- 255. Solid State Commun. 25, 1113-1116 (1978) , “ESR assessment of 3d7 transition metal impurity states in GaP, GaAs and InP”, U. Kaufmann , J. SchneiderPhoto-sensitive electron spin resonance of the 3d7-ions Fe+, Co2+, Ni3+ has been detected and analysed in GaP, GaAs and InP. For GaP : Ni3+, hyperfine interaction with the four nearest P31-ligands could be resolved. (Read more)
- 256. Solid State Commun. 25, 77-80 (1978) , “Exchange broadened, optically detected ESR spectra for luminescent donor-acceptor pairs in Li doped ZnO”, R. T. Cox, D. Block, A. Hervé, R. Picard and C. SantierR. HelbigApplication of optically detected ESR to the yellow photoluminescence of Li doped ZnO gives ESR spectra for shallow donor - lithium acceptor pairs, showing that at least a fraction of the yellow emission is donor-acceptor (D-A) luminescence. The distribution of separations rDA gives a spectrum of... (Read more)
- 257. Solid State Commun. 25, 987 (1978) , “EPR Spectra of Heat-Treatment Centers in Oxygen-Rich Silicon”, S. H. Muller, M. Sprenger, E. G. Sieverts and C. A. J. AmmerlaanAfter heat-treatment of oxygen-rich silicon at 410–550 °C ten different EPR spectra were observed. Nine of these are new spectra, seven of them reveal 2mm symmetry for the corresponding heat-treatment center, thereby reducing considerably the number of possible atomic configurations. In... (Read more)
- 258. Solid State Commun. 26, 255 (1978) , “EPR STUDIES OF A TWO-NITROGEN-ATOM CENTRE IN NATURAL, PLASTICALLY-DEFORMED DIAMOND”, C. M. WelbournThe hyperfine structure of an EPR system in a natural, brown diamond implies that the system is due to a centre containing two nitrogen atoms on almost equivalent sites. X-ray topographic evidence shows that the sample has been plastically deformed and it is suggested that a possible model for the... (Read more)
- 259. Solid State Commun. 26, 779-781 (1978) , “Motional effects in the EPR-spectrum of Cu-H-centers in ZnO”, D. ZwingelAt low temperatures, the EPR signal of a Cu2+ center is observed in ZnO single crystals doped both with copper and hydrogen. A clear effect of line narrowing on the copper hfs-lines is observed at T=16K. It is discussed in the model of a Cu-(OH) complex taking into account the thermally induced... (Read more)
- 260. Solid State Commun. 27, 867 (1978) , “Localization of the Fe0-Level in Silicon”, H. Feichtinger, J. Waltl and A. GschwandtnerSilicon samples were quenched from 1250°C – 1300°C and the 95K Fermi level was calculated from Hall effect data. The same samples were used to determine the intensity of the EPR spectrum at 95K associated with the iron interstitial (Fe°). In carefully selected samples, complete or... (Read more)
- 261. Solid State Commun. 28, 221 (1978) , “On the Production of Paramagnetic Defects in Silicon by Electron Irradiation”, E. G. Sieverts, S. H. Muller and C. A. J. AmmerlaanMonocrystalline silicon samples of different impurity contents have been irradiated with 1.5 MeV electrons in order to produce divacancies in their negative charge state. In these samples different combinations of defects have been observed with electron paramagnetic resonance. The conditions for... (Read more)
- 262. phys. stat. sol. (b) 85, 525 (1978) , “EPR of Lithium in Mechanically Affected Silicon”, M. Höhne.An intense narrow EPR spectrum is observed at 20 and 1.5 K in lithium doped silicon, which has been mechanically affected. The spectrum exhibits an angular dependent, only partly resolved structure. The spectra at the different temperatures can be explained by assuming lithium donors in rhombic... (Read more)
- 263. phys. stat. sol. (b) 86, 119 (1978) , “Nonrandom Strain in "crushed" silicon. EPR of thermally excited lithium donors”, M. Höhne.Si:Li single crystals with crushed surface layers are investigated by EPR. Measurements at 1.5 K show that these layers, which contain in the outer part also the dangling bond centre with g = 2.0055, nearly preserve their crystalline order, but exhibit strains preferentially perpendicular to the... (Read more)
- 264. phys. stat. sol. (b) 86, 269 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress I.. Line Positions and Line Structure”, H. Neubrand.ESR observations at zero external stress of the shallow acceptor centre boron in silicon are reported for the first time. These observations have become possible by the high degree of crystal perfection attainable today in Si-crystal growth. The spectrum, its angular and uniaxial pressure dependence... (Read more)
- 265. phys. stat. sol. (b) 90, 301 (1978) , “ESR from Boron in Silicon at Zero and Small External Stress II..Linewidth and Crystal Defects”, H. Neubrand.Observations of the ESR lineshape of the shallow acceptor centre B in silicon at zero external stress are reported. The broadening of two ∆M = 1 transitions can be well fitted by a Voigt profile. The Lorentzian part of the fit is shown to behave in full accordance with the theory of strain... (Read more)
- 266. phys. stat. sol. (a) 50, 237 (1978) , “High-Temperature Ion Implantation in Diamond”, Y. H. Lee, P. R. Brosious, J. W. CorbettC+ and N+ implantation into type IIa diamond are performed at various temperatures (25 to 1000°C) and ion-induced damage is studied by EPR measurements at 1.2 to 300 K. Hot implantation at 1000°C results in a reduced spin density of “amorphous” carbon by an order of... (Read more)
- 267. Phys. Rev. B 17, 2081 (1978) , “ESR of the doubly ionized Cr acceptor and infrared luminescence of Cr in GaP:Cr”, U. Kaufmann and W. H. KoschelAfter optical excitation a broad isotropic electron-spin-resonance (ESR) signal with g=1.999 has been observed in chromium-doped GaP. It is attributed to an isolated Cr+ (3d5) center, presumably on a Ga site, which may be viewed as the doubly ionized Cr acceptor. The low-energy... (Read more)
- 268. Phys. Rev. B 17, 4130 (1978) , “Erratum: EPR of a Jahn-Teller Distorted <111> Carbon Interstitialcy in Irradiated Silicon [Phys. Rev. B 9, 2607 (1974)]”, K. L. Brower.Due to a computational error, the numbers in table Ⅲ are incorrect: the corrected Table Ⅲ is listed below: (Read more)
- 269. Phys. Rev. B 18, 6834 (1978) , “Divacancy in Silicon: Hyperfine Interactions from Electron-Nuclear Double-Resonance Measurements. II”, E. G. Sieverts, S. H. Muller, and C. A. J. AmmerlaanThe Si-G7 EPR spectrum, which is attributed to the negative charge state of the divacancy in silicon, was investigated by electron-nuclear double resonance. Hyperfine interactions between the unpaired defect electron and various 29Si nuclei were determined to obtain detailed information... (Read more)
- 270. J. Vac. Sci. Technol. 15, 1267 (1978) , “Wave functions and (110) surface structure of III–V compounds”, D. J. Miller and D. HanemanNew electron paramagnetic resonance determinations of the dangling orbital on Ga atoms on the cleavage surfaces of GaP are compared with corresponding data for GaAs and A1Sb. Using a bond-orbital approach the (110) surface structure for all three compounds is reconstructed, with the surface cation... (Read more)
- 271. J. Vac. Sci. Technol. 15, 1298-1310 (1978) , “Reactions of oxygen with ZnO–100-surfaces”, W. GöpelInvestigations are reported on the reaction of oxygen with electrostatic neutral ZnO100-surfaces studied by means of AES, LEED, EPR, thermal desorption spectroscopy, and isotopic exchange as well as changes in the surface conductivity and work function. Geometric and electronic structures of... (Read more)
- 272. J. Appl. Phys. 49, 2401-2406 (1978) , “Resistance changes induced by electron-spin resonance in ion-implanted Si : P system”, K. Murakami, S. Namba, N. Kishimoto, K. Masuda, K. GamoThe ESR-induced changes in the dc resistance, /||ESR, of P-ion-implanted silicon have been observed for the first time. The transfer of absorbed Zeeman energy at liquid-He temperature has been investigated. The /||ESR signals observed were a narrow line with a g value of... (Read more)
- 273. Thermochim. Acta 29, 247-252 (1979) , “Combined EPR and TG techniques : comparison of the thermal reduction of chromium (VI) ions in some zinc chromates and chromate-oxalate mixtures*1”, Z. Gabelica , E. G. DerouaneR. HubinLower oxydation state chromium species which are successively formed and stabilized upon thermal reduction of chromate (VI) ions, are studied by combined EPR and TG-techniques.The spontaneous oxygen release occuring during the vacuum thermal treatment of some zinc chromates leads to the formation of... (Read more)
- 274. Thermally stimulated relaxation in solids 93 (1979) , ,P. Braeunlish , “Space-charge spectroscopy in semiconductor”, D.V.Lang
- 275. Surf. Sci. 82, 102-108 (1979) , “Structure of IlI–V compound (110) surface regions from EPR data and elastic energy minimisation calculations”, D. J. Miller and D. HanemanThe structure of the first several layers of the (110) surfaces of GaAs, AlSb and GaP are obtained by two methods. In the first, electron paramagnetic resonance data is combined with bond orbital considerations to yield first layer reconstructions. In the second method, the surface energy is... (Read more)
- 276. Sov. Phys. Solid State 21, 1852 (1979) , “Nature of paramagnetic centers in iron-doped GaAs and GaP”, V. I. Kirillov , V. V. Teslenko
- 277. Solid State Commun. 30, 211 (1979) , “IMAGING OF PARAMAGNETIC CENTRES IN DIAMOND”, M. J. R. Hoch and A. R. DayAn imaging method for determining the spatial distribution of paramagnetic nitrogen centres in diamond is described. Results are presented for a sample consisting of two small type IB diamonds. (Read more)
- 278. Solid State Commun. 32, 205-208 (1979) , “The origin of sharp near infrared transitions in chromium doped III–V semiconductors”, A. M. WhiteIt is contended that the sharp emission and absorption lines seen in GaAs:Cr and GaP:Cr at 0.839 eV and 1.029 eV are due to a type of excitonic recombination at isoelectronic sites involving chromium. This assignment contrasts strongly with the widely accepted model involving an internal d-d... (Read more)
- 279. Solid State Commun. 32, 399-401 (1979) , “Pulsed far-infrared spectroscopy of GaAs:Cr at high magnetic fields in the field-modulation mode”, R. J. Wagner and A. M. WhiteA magnetic field-modulation technique has been developed for sensitive far infrared electron paramagnetic resonance (EPR) spectroscopy on Cr2+ centers in GaAs. A hundred-fold improvement in signal-to-noise ratio relative to non-modulation techniques was obtained. The results of this experiment have... (Read more)
- 280. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
- 281. Phys. Rev. B 19, 1015 (1979) , “Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-doped AlxGa1-xAs”, D. V. Lang, R. A. Logan, M. JarosPhotocapacitance measurements have been used to determine the electron photoionization cross section of the centers responsible for persistent photoconductivity in Te-doped AlxGa1-xAs. The cross-section data, which have been obtained at various temperatures and for crystals of... (Read more)
- 282. Phys. Rev. B 20, 795 (1979) , “Effects of uniaxial stress and temperature variation on the Cr2+ center in GaAs”, J. J. Krebs and G. H. StaussThe effects both of applied uniaxial stress and of temperature variation on the EPR spectrum of Cr2+ in GaAs have been studied. The rapid stress-induced alignment of the Cr2+ centers at 4.2 K shows that the observed tetragonal symmetry is due to the Jahn-Teller effect as was... (Read more)
- 283. J. Phys. Chem. 83, 3462-3467 (1979) , “Dynamic Interchange among Three States of Phousphorus 4+ in ?-Quartz”, Y. Uchida, J. Isoya, J. A. WeilDynamic averaging due to electron jumping among three states with different sp hybrid directions in the P4+ center [PO4]0 in α-quartz has been studied by single-crystal electron paramagnetic resonance. The spin-Hamiltonian matrices g and Aslp for low temperature (i.e., C140 K) spectra P(І) and P(Ⅱ) and for high temperature spectrum P(A) are reported. For each crystal site, the line positions of P(A) agree well with those derived from the matrices measured for the three states. i.e., with weighted averages including P(І) and the two symmetry-related P(Ⅱ) spectra. (Read more)
- 284. J. Non-Cryst. Solids 32, 313-326 (1979) , “OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS”, M. Stapelbroek, D. L. Griscom, E. J. Friebele and G. H. Sigel, Jr.Two distinct oxygen-associated trapped-hole centers (OHCs) are identified in samples of room-temperature γ-irradiated, high-purity fused silica. One, which we label the "wet" OHC, predominates in the high-OH-content (wet) silicas while the other, the "dry" OHC, is more... (Read more)
- 285. J. Non-Cryst. Solids 32, 327-338 (1979) , “ELECTRON SPIN RESONANCE AND HOPPING CONDUCTIVITY OF a-SiOx”, E. Holzenkmpfer, F. -W. Richter, J. Stuke, U. Voget-GroteAmorphous SiOx-layers with O < x < 2 have been prepared by evaporation of Si at oxygen pressures of 10−6 … 10−3 mbar. The composition of the samples was determined by proton backscattering. The band gap, derived from optical measurements, increases with rising oxygen... (Read more)
- 286. J. Non-Cryst. Solids 34, 339-356 (1979) , “ESR and optical absorption of cupric ion in borate glasses”, H. Hosono, H. Kawazoe and T. KanazawaESR and optical absorption of Cu2+ were measured in xNa2O(100−x)B2O3 (1 ≤ x ≤ 75), x ZnO(100−x)B2O3 (46 ≤ x ≤ 64) and x Pb(100−x)b2O3 (20 ≤ x ≤ 75) glasses, where x is expressed in mol.%. Spin hamiltonian parameters and ligand field... (Read more)
- 287. J. Appl. Phys. 50, 280 (1979) , “The effect of oxidation on the diffusion of phosphorus in silicon”, R. Francis and P. S. DobsonThe diffusion of phosphorus from a thick epitaxial layer into a silicon substrate has been investigated using the spreading-resistance technique. By comparing the diffusion profile under a free oxidized surface with the profile under a masked surface, it has been shown that surface oxidation... (Read more)
- 288. J. Appl. Phys. 50, 3721 (1979) , “Catastrophic damage of AlxGa1–xAs double-heterostructure laser material”, C. H. Henry, P. M. Petroff, R. A. Logan, and F. R. MerrittWe carry out a detailed study of catastrophic degradation (CD) in DH laser material from which we reach two conclusions. First, local melting occurs and is due to intense nonradiative recombination of minority carriers at a cleaved surface or at a defect. The minority carriers are generated by... (Read more)
- 289. J. Appl. Phys. 50, 5425 (1979) , “EPR investigations of the defect chemistry of semi-insulating GaAs : Cr”, A. Goltzené, G. Poiblaud, and C. SchwabThe effects of some heat treatments under various atmospheres (vacuum, As, Ga2O3, or H2) on GaAs : Cr samples have been investigated by EPR. The equilibria between the two valence states Cr + and Cr2 + seem to depend on various parameters such... (Read more)
- 290. J. Appl. Phys. 50, 5847-5854 (1979) , “ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers”, P. J. Caplan, E. H. Poindexter, B. E. Deal, R. R. RazoukThe ESR Pb center has been observed in thermally oxidized single-crystal silicon wafers, and compared with oxide fixed charge Qss and oxidation-induced interface states Nst. The Pb center is found to be located... (Read more)
- 291. J. Appl. Phys. 50, 6251 (1979) , “EPR determination of the concentration of chromium charge states in semi-insulating GaAs : Cr”, G. H. Stauss, J. J. Krebs, S. H. Lee, and E. M. SwiggardChromium can assume three different charge states in semi-insulating GaAs :Cr. An EPR-optical method is described which allows the Cr concentration in each of these states to be quantitatively determined. Typical results are given for a number of Cr-doped GaAs samples. Journal of Applied... (Read more)
- 292. J. Appl. Phys. 50, 6334 (1979) , “The sulfur-related trap in GaAs1–xPx”, R. A. Craven and D. FinnA systematic study has been made of the deep level introduced into GaAs1xPx alloy material by S doping. Conclusive documentation of the linear relationship between S concentration and the deep-level trap concentration is presented for x?0.4. The... (Read more)
- 293. J. Appl. Phys. 50, 6643 (1979) , “TEM observation of catastrophically degraded Ga1–xAlxAs double-heterostructure lasers”, Osamu Ueda, Hajime Imai, Tsuyoshi Kotani, Koichi Wakita, Hideho SaitoDefect structures of degraded GaAs/Ga1xAlxAs double-heterostructure (DH) lasers applied with pulsed current under high current density are studied by transmission electron microscopy. Several kinds of defects are observed corresponding to the 110 dark-line... (Read more)
- 294. J. Appl. Phys. 50, 765 (1979) , “Defect structure of degraded Ga1–xAlxAs double-heterostructure light-emitting diodes”, Osamu Ueda, Shoji Isozumi, Shigenobu Yamakoshi, and Tsuyoshi KotaniThe defect structure of degraded Ga1xAlxAs double-heterostructure (DH) light-emitting diodes (LED's) was investigated by electroluminescence (EL) topography and transmission electron microscopy (TEM). Two types of dark-line defects (DLD's), 100 DLD's and 110... (Read more)
- 295. J. Appl. Phys. 50, 8095 (1979) , “Comparison of two kinds of oxygen donors in silicon by resistivity measurements”, Akihiro Kanamori and Masaru KanamoriDonor formation during heat treatment of silicon in the 550800 °C temperature range has been investigated by resistivity measurements. The maximum donor concentration obtained here is about 1×1016/cm3 in p-type Czochralski-grown silicon. The donor is... (Read more)
- 296. Appl. Phys. Lett. 35, 211 (1979) , “Self-diffusion in intrinsic silicon”, Ludomir Kalinowski and Remy SeguinThe silicon self-diffusion in intrinsic silicon was investigated by a new method using stable isotope 30Si and the ion-analyzer technique. The temperature dependence of the diffusion coefficient was obtained in the range from 885 to 1175 °C from which an activation energy 110.6... (Read more)
- 297. Sov. Phys. Semicond. 14, 1277 (1980) , “Photo-Electron Spin Resonance of K Centers in Electron Irradiated Silicon”, L. S. Vlasenko, A. A. Lebedev, V. M. Rozhkov.The ESR method was used to study photoexcited K centers in n-type silicon irradiated with 30 MeV electrons. The investigation was carried out in the temperature range 77-160ºK. It was found that the ESR spectrum of the K centers appeared in electron-irradiated n-type silicon when this material was illuminated with light of photon energy hν > 0.76 eV and it was observed for a long time after the end of illumination. The use of longer light wavelength resulted in the disappearance (quenching) of the ESR spectrum of the K centers. A study was made of the kinetics of the excitation and quenching of the ESR spectra of the K centers by photons of different energies and the spectral dependence of the photoionization cross section of the K centers was recorded. The optical and thermal ionization energies of these centers. as well as the carriercapture cross sections were determined.
- 298. Solid State Commun. 34, 803 (1980) , “Spin dependent surface recombination in silicon p-n junctions: The effect of irradiation”, D. Kaplan and M. PepperWe present the results of an investigation of spin dependent recombination in (100) oriented, gate controlled Si diodes irradiated by 30 keV electrons. After irradiation, recombination at the Si---SiO2 interface is increased, and saturation of the spin resonance increases the diode forward current... (Read more)
- 299. Solid State Commun. 36, 15-17 (1980) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs , G. H. Stauss , A. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a submillimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g = 2.04 ± 0.01 at . The hyperfine interaction parameter | A | ([ = 3/2) is 0.090 ± 0.001 cm-1. The spectrum is attributed to the As... (Read more)
- 300. Solid State Commun. 36, 897-900 (1980) , “EPR measurements on chromium doped GaAs, GaP and InP”, N. K. Goswami, R. C. Newman and J. E. WhitehouseEPR measurements have been made on chromium doped GaAs samples at 4.2 K. An n-type sample doped with chromium and silicon was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr+ (3d5) was detected, although the Crs 2+ spectrum was observed. The generally... (Read more)
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