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- 1001. J. Appl. Phys. 98, 043507 (2005) , “Electric-dipole spin-resonance signals related to extended interstitial agglomerates in silicon”, T. MchedlidzeThree electric-dipole spin-resonance signals, labeled TU7, TU8, and TU9, were detected after subjecting oxygen-rich silicon samples to two-step annealing procedures at 450 and 650 °C for prolonged times. The formation and structural evolution of large interstitial agglomerates, known as rodlike... (Read more)
- 1002. J. Appl. Phys. 98, 033704 (2005) , “N interstitial and its interaction with substitutional Mg in p-type GaN”, R. R. Wixom and A. F. WrightDensity-functional theory and the generalized gradient approximation were utilized to investigate the local-energy-minimum configurations and formation energies of N interstitials and their interaction with substitutional Mg in p-type GaN. Along with previously proposed configurations of the... (Read more)
- 1003. J. Appl. Phys. 98, 023704 (2005) , “Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry”, E. Trajkov and S. PrawerElectrically active defects and traps in sulfur-doped polycrystalline diamond films synthesized by microwave-assisted chemical-vapor deposition are evaluated using thermally stimulated conductivity measurements after ultraviolet (UV) illumination. The measurements are found to be consistent with the... (Read more)
- 1004. J. Appl. Phys. 98, 013502 (2005) , “Near-band-edge slow luminescence in nominally undoped bulk ZnO”, T. Monteiro, A. J. Neves, M. C. Carmo, M. J. Soares, M. Peres, and J. WangWe report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite... (Read more)
- 1005. J. Appl. Phys. 97, 123905 (2005) , “Electron paramagnetic resonance of Cr3+ in near-stoichiometric LiTaO3”, M. Loyo-Menoyo and D. J. KeebleElectron-paramagnetic-resonance (EPR) experiments on the dominant Cr3+ center in near-stoichiometric LiTaO3 crystals, grown by the double crucible Czochralski method, are reported. A near complete roadmap of EPR positions was obtained allowing an accurate determination of the... (Read more)
- 1006. J. Appl. Phys. 98, 093701 (2005) , “Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells”, H. S. Lee and M. YamaguchiPresented in this paper are 1 MeV electron irradiation effects on wide-band-gap (1.97 eV) (Al0.08Ga0.92)0.52In0.48P diodes and solar cells. The carrier removal rate estimated in p-AlInGaP with electron fluence is about 1 cm1, which... (Read more)
- 1007. J. Appl. Phys. 98, 093517 (2005) , “Large lattice relaxation deep levels in neutron-irradiated GaN”, S. Li, J. D. Zhang, C. D. Beling, K. Wang, and R. X. WangDeep level transient spectroscopy (DLTS) and deep level optical spectroscopy (DLOS) measurements have been carried out in neutron-irradiated n-type hydride-vapor-phase-epitaxy-grown GaN. A defect center characterized by a DLTS line, labeled as N1, is observed at... (Read more)
- 1008. J. Appl. Phys. 98, 073502 (2005) , “Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy”, Y. W. HeoThe properties of ZnO films grown by molecular-beam epitaxy are reported. The primary focus was on understanding the origin of deep-level luminescence. A shift in deep-level emission from green to yellow is observed with reduced Zn pressure during the growth. Photoluminescence and Hall measurements... (Read more)
- 1009. Appl. Phys. Lett. 70, 499 (1997) , “Evidence for hole traps at the amorphous silicon/amorphous silicon–germanium heterostructure interface”, C. Palsule, U. Paschen, and J. D. CohenVoltage-pulse stimulated capacitance transient measurements on a series a-Si:H/a-Si, Ge:H devices disclose a large density of hole traps at or very close to the heterojunction interface. The transient signal magnitude is independent of temperature or applied bias, ruling out charge... (Read more)
- 1010. Appl. Phys. Lett. 70, 496 (1997) , “Positron annihilation studies of silicon-rich SiO2 produced by high dose ion implantation”, G. Ghislotti and B. NielsenPositron annihilation spectroscopy (PAS) is used to study Si-rich SiO2 samples prepared by implantation of Si (160 keV) ions at doses in the range 3 × 10163 × 1017 cm2 and subsequent thermal annealing at high temperature (up to 1100... (Read more)
- 1011. Appl. Phys. Lett. 70, 478 (1997) , “Luminescence, absorption, and site symmetry of Ce activated SrGa2S4 phosphors”, W. L. Warren, K. Vanheusden, M. A. Rodriguez, C. H. Seager, and D. R. TallantCe activated SrGa2S4 blue emitting phosphors were examined using electron paramagnetic resonance and x-ray diffraction to determine the local environment and oxidation state of the Ce ion. Photothermal deflection and photoluminescence spectroscopies were applied to determine... (Read more)
- 1012. Appl. Phys. Lett. 70, 432 (1997) , “The ring-hexavacany in silicon: A stable and inactive defect”, S. K. Estreicher and J. L. HastingsMolecular dynamics simulations as well as ab initio and near ab initio Hartree-Fock calculations in crystalline silicon predict that the configuration of the hexavacancy that has a hexagonal ring missing from the crystal is remarkably stable. The energetics imply that it does form and... (Read more)
- 1013. Appl. Phys. Lett. 70, 369 (1997) , “Postgrowth hydrogen treatments of nonradiative defects in low-temperature molecular beam epitaxial Si”, W. M. Chen, I. A. Buyanova, W.-X. Ni, G. V. Hansson, and B. MonemarInfluence of postgrowth hydrogen treatments on nonradiative recombination centers in undoped and B-doped Si epilayers, grown by molecular beam epitaxy at low temperatures, are studied by optical detection of magnetic resonance. Hydrogen passivation of the dominant nonradiative defects in undoped Si... (Read more)
- 1014. Appl. Phys. Lett. 70, 357 (1997) , “Carbon–hydrogen complexes in vapor phase epitaxial GaN”, Gyu-Chul YiCarbonhydrogen complexes in undoped and Mg-doped epitaxial GaN films have been investigated using Fourier transform infrared spectroscopy. Infrared absorption peaks in the Mg-doped material were observed at 2853, 2923, and 2956 cm 1. The absorption peaks are attributed to the... (Read more)
- 1015. Appl. Phys. Lett. 70, 348 (1997) , “Nanosecond time-resolved emission spectroscopy from silicon implanted and annealed SiO2 layers”, A. Pifferi, P. Taroni, A. Torricelli, and G. ValentiniPhotoluminescence decay curves and nanosecond time-gated spectra were measured from silicon implanted SiO2 layers after thermal annealing. Different ion fluences and annealing times were tested. Three components emitting blue-green light with lifetimes of about 0.4, 2, and 10 ns were... (Read more)
- 1016. Appl. Phys. Lett. 70, 252 (1997) , “Investigation of CxSi defects in C implanted silicon by transmission electron microscopy”, P. WernerBuried CxSi layers were produced by high-energy implantation of carbon into CZ silicon. The depth distribution of carbon, the morphology of the buried layers, as well as the precipitation of C were investigated as functions of rapid thermal annealing between 700 and 1300 °C,... (Read more)
- 1017. Appl. Phys. Lett. 70, 191 (1997) , “Porous silicon structure studied by nuclear magnetic resonance”, D. Petit, J.-N. Chazalviel, F. Ozanam, and F. DevreuxWe present a nuclear-magnetic-resonance (NMR) study of the structure of porous silicon. Cross-polarizationmagic-angle-spinning 29Si NMR shows that the silicon crystalline structure is preserved in porous silicon and that there are three protonated silicon species at the surface,... (Read more)
- 1018. Appl. Phys. Lett. 70, 176 (1997) , “Damage evolution and surface defect segregation in low-energy ion-implanted silicon”, P. J. Bedrossian, M.-J. Caturla, and T. Diaz de la RubiaWe have combined computer simulations and atomic-resolution tunneling microscopy to investigate the kinetics of defect migration during annealing of ion implanted Si(111)-7 × 7. Using atomically-clean and flat surfaces as sinks for bulk point defects introduced by the irradiation, we observe... (Read more)
- 1019. Appl. Phys. Lett. 70, 886 (1997) , “High-resistance layers in n-type 4H-silicon carbide by hydrogen ion implantation”, Ravi K. NadellaThe effect of hydrogen ion implantation damage on the resistivity of n-type 4Hsilicon carbide is investigated. The variation of resistivity as a function of measurement temperature and postimplant annealing temperature is studied. Calculated resistivities obtained from resistance... (Read more)
- 1020. Appl. Phys. Lett. 70, 2165 (1997) , “Type conversion in irradiated silicon diodes”, Stephen J. Taylor, Masafumi Yamaguchi, Ming-Ju Yang, and Mitsuru ImaizumiWe have observed conversion from p- to n-type of the base layer of n + \ p \ p+ silicon diodes irradiated with more than roughly 5 × 1016 cm2 1 MeV electrons. Annealing for 15 min at 200 °C results in a recovery of... (Read more)
- 1021. Appl. Phys. Lett. 70, 1983 (1997) , “Deep levels and persistent photoconductivity in GaN thin films”, C. H. Qiu and J. I. PankovePhotocurrent decay in GaN thin films was studied in the time span from a few seconds to several days. The persistent photoconductivity (PPC) behavior was observed not only in Mg-doped p-type GaN films but also in undoped n-type GaN films. The photoconductivity spectra and the... (Read more)
- 1022. Appl. Phys. Lett. 70, 1876 (1997) , “Gettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon”, B. Shen, X. Y. Zhang, K. Yang, P. Chen, R. Zhang, Y. Shi, and Y. D. ZhengGettering of Fe impurities by bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current technique and transmission electron microscopy. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when... (Read more)
- 1023. Appl. Phys. Lett. 70, 1858 (1997) , “Electron paramagnetic resonance of nitrogen pairs and triads in 6H-SiC: Analysis and identification”, C. F. Young, K. Xie, and E. H. PoindexterA study of electron paramagnetic resonance (EPR) of nitrogen-doped 6H-SiC is reported here. By use of both first- and second-harmonic EPR detection, the predicted spectral fingerprints for nitrogen pairs and triads were found at low temperatures. The pair spectrum was present in the second... (Read more)
- 1024. Appl. Phys. Lett. 70, 1831 (1997) , “Gallium self-diffusion in gallium phosphide”, Lei Wang, J. A. Wolk, L. Hsu, and E. E. HallerGa self-diffusion in gallium phosphide (GaP) is measured directly in isotopically controlled GaP heterostructures. Secondary ion mass spectroscopy (SIMS) is used to monitor intermixing of 69Ga and 71Ga between isotopically pure GaP epilayers which are grown by molecular beam... (Read more)
- 1025. Appl. Phys. Lett. 70, 1724 (1997) , “Compensating defects in heavily nitrogen-doped zinc selenide: A photoluminescence study”, M. Moldovan, S. D. Setzler, T. H. Myers, L. E. Halliburton, and N. C. GilesPhotoluminescence (PL) from a heavily nitrogen-doped ZnSe epilayer grown by molecular beam epitaxy was studied as a function of excitation wavelength, power density, and temperature. Also, the time decay of the PL emission was measured. Detailed analysis of the PL data indicates that the deep broad... (Read more)
- 1026. Appl. Phys. Lett. 70, 1659 (1997) , “Stimulated far-infrared emission from copper-doped germanium crystals”, G. SirmainWe have detected stimulated far-infrared emission from copper-doped germanium single crystals. By varying the magnetic field between 1 and 2.3 T, we have achieved emission in the range of 70120 cm 1. Laser action was observed for crystals with a copper acceptor concentration... (Read more)
- 1027. Appl. Phys. Lett. 70, 1584 (1997) , “New interpretation of the dominant recombination center in platinum doped silicon”, J.-U. Sachse, E. Ö. Sveinbjörnsson, W. Jost, and J. WeberThe midgap level in platinum doped n-type silicon, which was proposed to be the dominant recombination center, is identified as a platinum-hydrogen complex. Hydrogenation of the samples is achieved by wet-chemical etching at room temperature. Defect profiles, determined by deep level... (Read more)
- 1028. Appl. Phys. Lett. 70, 1572 (1997) , “Spatial variations in oxygen precipitation in silicon after high temperature rapid thermal annealing”, M. Pagani, R. J. Falster, G. R. Fisher, G. C. Ferrero, and M. OlmoSpatial variations of oxygen precipitation have been studied in silicon wafers submitted to rapid thermal annealing (RTA) in nitrogen ambients at a temperature above 1150 °C prior to a two-step precipitation treatment. The samples submitted to high temperature preannealing show a consistent... (Read more)
- 1029. Appl. Phys. Lett. 70, 1390 (1997) , “Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substrates”, Q.-Y. Tong, K. Gutjahr, S. Hopfe, and U. GöseleSi, Ge, SiC, and diamond samples were implanted with H2+" align="middle"> at 120160 keV with 5.0 × 1016 ions/cm2 (corresponding to 1.0 × 1017 H+ ions/cm2) and annealed at various temperatures to introduce... (Read more)
- 1030. Appl. Phys. Lett. 70, 1272 (1997) , “Paramagnetic susceptibility of semiconducting CdF2:In crystals: Direct evidence of the negative-U nature of the DX-like center”, S. A. Kazanskii and A. I. RyskinParamagnetic susceptibility κpara of CdF2 crystals with bistable In centers is measured in the temperature range T=4300 K. For crystals cooled in the dark down to liquid helium temperature, κpara is determined by the trace Mn2 + ... (Read more)
- 1031. Appl. Phys. Lett. 70, 1146 (1997) , “Effects of phosphorus doping on boron transient enhanced diffusion in silicon”, M. B. Huang, T. W. Simpson, and I. V. MitchellThe effects of phosphorus predoping on transient enhanced diffusion (TED) of boron, ion implanted into silicon, were studied using secondary ion mass spectroscopy (SIMS). Boron ions of 40 keV energy were implanted to a dose of 3 × 1014 cm2 into Si(100), which had... (Read more)
- 1032. Appl. Phys. Lett. 70, 1014 (1997) , “Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC”, C. Peppermüller and R. HelbigWe investigated the low temperature (T < 2 K) photoluminescence (LTPL) emission of 6HSiC samples after implantation of either boron or boron together with hydrogen. After implantation of boron and annealing at 1700 °C, we detected new LTPL emission at 4205 Å. After... (Read more)
- 1033. Appl. Phys. Lett. 70, 3597 (1997) , “Photoluminescence study of implantation dose and dose-rate dependence of Si doping of GaAs”, M. Kotani, M. Zafar Iqbal, and Y. MakitaPhotoluminescence spectroscopy is used to investigate some of the recently reported effects of implantation dose and dose rate on the electrical activation of Si dopant in GaAs. Two new luminescence bands are observed to emerge in our spectra with the increasing Si dose at doses (~ 2 ×... (Read more)
- 1034. Appl. Phys. Lett. 70, 3284 (1997) , “Electrical characterization of partially relaxed InxGa1 – xAs/GaAs multiple quantum well structures”, C. R. Moon, In Kim, Jeong Seok Lee, and Byung-Doo ChoeElectronic properties of partially relaxed InxGa1 xAs/GaAs multiple quantum well (MQW) structures are investigated using capacitancevoltage (CV) profiling and deep level transient spectroscopy (DLTS). As the In composition becomes... (Read more)
- 1035. Appl. Phys. Lett. 70, 3281 (1997) , “Transient enhanced diffusion of Sb and B due to MeV silicon implants”, D. J. Eaglesham, T. E. Haynes, H.-J. Gossmann, D. C. Jacobson, P. A. Stolk, and J. M. PoateWe measure the transient enhanced diffusion of shallow molecular-beam-epitaxy grown marker layers of Sb and B due to deep MeV Si + ion implants at very high doses (1016 cm 2). We expect the near-surface region of these implants to be vacancy rich, and we... (Read more)
- 1036. Appl. Phys. Lett. 70, 3131 (1997) , “Temperature dependence of the photoquenching of EL2 in semi-insulating GaAs”, A. Alvarez, J. Jiménez, M. A. González, and L. F. SanzA model of the temperature behavior of the photoquenching of EL2 in semi-insulating GaAs is presented. The thermal emission of a hole trapped on an actuator level accounts for the very low photoquenching efficiency above 85 K. This effect is presented in terms of a set of rate equations that... (Read more)
- 1037. Appl. Phys. Lett. 70, 3002 (1997) , “The effect of impurity content on point defect evolution in ion implanted and electron irradiated Si”, S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, and J. M. PoateWe compare the defect complexes generated in crystalline Si by electron irradiation and ion implantation, using irradiation fluences which deposit the same total energy in nuclear collisions. Deep level transient spectroscopy was used to monitor both vacancy-type (e.g., divacancies) and... (Read more)
- 1038. Appl. Phys. Lett. 70, 2723 (1997) , “Positron annihilation in ZnSe layers grown on GaAs: Zinc vacancies and drift in the electric field at the ZnSe/GaAs interface”, L. Liszkay, C. Corbel, and P. HautojärviWe used a slow positron beam to investigate the depth dependence of the positronelectron pair momentum distribution in ZnSe layers grown on a GaAs substrate. We report evidence that positrons annihilate in lattice in undoped ZnSe and at vacancies in heavily n-type ZnSe. It is also... (Read more)
- 1039. Appl. Phys. Lett. 70, 2574 (1997) , “Effect of nitrogen incorporation on electrical properties of boron-doped diamond films”, S. Sonoda, J. H. Won, H. Yagi, A. Hatta, T. Ito, and A. HirakiThe effect of a small amount of nitrogen incorporated in chemical vapor deposited diamond films on their electrical properties was studied. Upgrading the purity of CH4 gas from the conventional ultra-high purity to the grade with no detection of nitrogen resulted in improvement of... (Read more)
- 1040. Appl. Phys. Lett. 70, 2395 (1997) , “Optical absorption and light-induced charge transport of Fe2+ in BaTiO3”, A. Mazur, O. F. Schirmer, and S. MendricksIron doped barium titanate was grown and reduced at various temperatures. Using optical absorption and electron paramagnetic resonance (photo-EPR) simultaneously, a wide absorption band at ~ 2.1 eV due to Fe2+ is established. The light-induced charge transport between Fe2+/3+... (Read more)
- 1041. Appl. Phys. Lett. 70, 2274 (1997) , “Observation of singly ionized selenium vacancies in ZnSe grown by molecular beam epitaxy”, S. D. Setzler, M. Moldovan, Zhonghai Yu, T. H. Myers, N. C. Giles, and L. E. HalliburtonElectron paramagnetic resonance (EPR) has been used to investigate singly ionized selenium vacancy VSe+" align="middle"> centers in ZnSe epilayers grown by molecular beam epitaxy (MBE). The study included undoped and nitrogen-doped films. Spectra taken at 8 K and 9.45 GHz, as... (Read more)
- 1042. Appl. Phys. Lett. 70, 3525 (1997) , “The dissolution behavior of the void defects by hydrogen annealing in Czochralski grown silicon crystals”, K. Nakamura, T. Saishoji, and J. TomiokaThe annihilation of grown-in defects by hydrogen annealing have been explained as the dissolution of oxygen precipitates, because it has been generally thought that grown-in defects in Czochralski silicon crystals are gigantic oxygen precipitates. However, it is necessary to re-examine the mechanism... (Read more)
- 1043. Appl. Phys. Lett. 70, 3425 (1997) , “Ion implantation induced swelling in 6H-SiC”, R. Nipoti, E. Albertazzi, M. Bianconi, R. Lotti, G. Lulli, and M. CerveraIon implantation induced surface expansion (swelling) of 6H-SiC was investigated through the measurement of the step height between implanted and unimplanted areas. The samples were irradiated at room temperature with 500 keV Al+ ions in the dose range 1.25 × 10143... (Read more)
- 1044. Appl. Phys. Lett. 70, 3392 (1997) , “Indium diffusion in n-type gallium arsenide”, W. M. Li and R. M. CohenDiffusion of indium markers at T = 900 °C have been measured in undoped and Te-doped GaAs epilayers grown by organometallic vapor phase epitaxy. The diffusivity was found to be a linear function of electron concentration over the range n = 2 × 10171.5 ×... (Read more)
- 1045. Appl. Phys. Lett. 70, 3380 (1997) , “Measurement of single interface trap capture cross sections with charge pumping”, N. S. SaksA technique has been developed using charge pumping to determine electron and hole capture cross sections of individual interface traps in small silicon metaloxidesemiconductor transistors. Values for both cross sections are 1016 cm2 for the particular trap... (Read more)
- 1046. Appl. Phys. Lett. 70, 3374 (1997) , “Carrier trapping due to Fe3 + / Fe2 + in epitaxial InP”, D. SöderströmTime-resolved photoluminescence studies were performed on epitaxially grown InP either doped with iron or with iron and sulphur to gain information on the carrier trapping characteristics of Fe3+/Fe2+. The carrier trapping time was found to be dependent on both the iron and... (Read more)
- 1047. Appl. Phys. Lett. 70, 3362 (1997) , “Studies of Mn valence conversion and oxygen vacancies in La1 – xCaxMnO3 – y using electron energy-loss spectroscopy”, Z. L. Wang, J. S. Yin, and Y. D. JiangUsing the white line intensities, electron energy-loss spectroscopy in a transmission electron microscope has been employed to characterize the valence conversion and oxygen vacancies in La1 xCaxMnO3 y. For a nominal doping... (Read more)
- 1048. Appl. Phys. Lett. 70, 3332 (1997) , “Interstitial defects in silicon from 1–5 keV Si + ion implantation”, Aditya Agarwal and Tony E. HaynesExtended defects from 5-, 2-, and 1-keV Si+ ion implantation are investigated by transmission electron microscopy using implantation doses of 1 and 3 × 1014 cm 2 and annealing temperatures from 750 to 900 °C. Despite the proximity of the surface,... (Read more)
- 1049. J. Appl. Phys. 103, 033701 (2008) , “Electron capture and emission properties of interface states in thermally oxidized and NO-annealed SiO2/4H-SiC”, X. D. Chen, S. Dhar, T. Isaacs-Smith, J. R. Williams, L. C. Feldman, and P. M. MooneyPostoxidation annealing in nitric oxide (NO) results in a significant reduction of electronic states at SiO2/4H-SiC interfaces. Measurements of electron trapping dynamics at interface states in both thermally oxidized and NO annealed SiO2/4H-SiC interfaces were performed using... (Read more)
- 1050. Appl. Phys. Lett. 71, 945 (1997) , “n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine”, Toshihiko Nishimori, Koji Nakano, and Hitoshi SakamotoAn n-type phosphorous (P) doped epitaxial diamond film with high conductivity was grown on a C(001) substrate by gas source molecular beam epitaxy using methane and tri-n-butylphosphine. The electrical conductivity of the diamond film was measured to be 0.33 (Ω... (Read more)
- 1051. Appl. Phys. Lett. 71, 93 (1997) , “Pressure-induced intra-4f luminescence in GaAs:Er,O”, K. Takarabe, T. Mizushima, and S. MinomuraIn metalorganic chemical vapor deposition grown GaAs:Er,O samples, at ambient pressure, only the ErGa 2O center is excited by above band gap host photoexcitation (host excitation) and shows a sharp infrared luminescence spectra due to intra-4f transitions in the Er3 +... (Read more)
- 1052. Appl. Phys. Lett. 71, 806 (1997) , “Halogen impurities in silicon: Shallow single donors”, D. J. ChadiFrom the results of first-principles calculations, we find that substitutional Cl, and Br and I impurities in Si are stable shallow single donor dopants that are mostly immune to deactivation processes preventing superhigh n doping of Si with column V impurities. In the absence of... (Read more)
- 1053. Appl. Phys. Lett. 71, 638 (1997) , “Ga vacancies in low-temperature-grown GaAs identified by slow positrons”, J. Gebauer, R. Krause-Rehberg, and S. EichlerA systematic investigation of GaAs layers grown at low temperatures was carried out by means of positron annihilation. The vacancy defects in undoped as-grown material were identified to be mainly Ga vacancies (VGa) by comparing the annihilation parameters to those of Ga vacancies... (Read more)
- 1054. Appl. Phys. Lett. 71, 524 (1997) , “Characterization of the dominant midgap levels in Si-doped GaN by optical-isothermal capacitance transient spectroscopy”, P. Hacke and H. OkushiOptical-isothermal capacitance transient spectroscopy (O-ICTS) was used to characterize prominent midgap carrier traps in Si-doped n-type GaN grown by metalorganic vapor phase epitaxy. Strong carrier photoionization was observed from two deep levels to the conduction band. The first level... (Read more)
- 1055. Appl. Phys. Lett. 71, 482 (1997) , “Photoluminescence of CuInS2 thin films and solar cells modified by postdeposition treatments”, K. Töpper, J. Bruns, R. Scheer, M. Weber, A. Weidinger, and D. BräunigThe photoluminescence of CuInS2 thin films and solar cells is investigated as a function of postdeposition treatments for different temperatures and excitation intensities. Annealing in hydrogen atmosphere causes an increase of PL intensity at 1.445 eV by more than a factor of 100, while... (Read more)
- 1056. Appl. Phys. Lett. 71, 389 (1997) , “Evolution of interstitial- and vacancy-type defects upon thermal annealing in ion-implanted Si”, S. Libertino, J. L. Benton, D. C. Jacobson, D. J. Eaglesham, and J. M. PoateWe have quantitatively analyzed the structure and the annealing behavior of the point defects introduced by ion implantation in Si. We used deep-level transient spectroscopy to monitor and count interstitial-type (e.g., carbonoxygen complexes) and vacancy-type (e.g., divacancies) defects... (Read more)
- 1057. Appl. Phys. Lett. 71, 264 (1997) , “Oxygen aggregation in Czochralski-grown silicon heat treated at 450 °C under compressive stress”, V. V. EmtsevIt has been established that the oxygen aggregation processes in Czochralski-grown silicon (CzSi) at 450 °C are strongly affected by high hydrostatic pressure. We observed the enhanced production of shallow thermal donors with ionization energies of 3040 meV and deep donors at... (Read more)
- 1058. Appl. Phys. Lett. 71, 1379 (1997) , “Trivalent behavior of palladium in silicon”, J.-U. Sachse, W. Jost, and J. WeberPalladium is known to exhibit an acceptor state at EC 0.22 eV in n-type Si and a donor state at EV + 0.31 eV in p-type Si. We have identified a third level at EV + (0.140 ± 0.005) eV and attribute it... (Read more)
- 1059. Appl. Phys. Lett. 71, 1186 (1997) , “Boron acceptor levels in 6H-SiC bulk samples”, A. O. Evwaraye, S. R. Smith, W. C. Mitchel, and H. McD. HobgoodThermal admittance spectroscopy has been used to determine the ground-state energies of the boron impurity in 6H-SiC. The background doping, NA ND, of the samples used in this study ranged from 3 × 1016 to 1 ×... (Read more)
- 1060. Appl. Phys. Lett. 71, 1116 (1997) , “Optically detected cyclotron resonance properties of high purity ZnSe epitaxial layers grown on GaAs”, M. Drechsler, B. K. Meyer, and D. M. HofmannThe conduction band electron properties in ZnSe epitaxial layers on GaAs grown by molecular beam epitaxy are determined by far-infrared optically detected cyclotron resonance experiments. The high τ-value (in excess of 800) allows the observation of the spin splitting of the cyclotron resonance.... (Read more)
- 1061. Appl. Phys. Lett. 71, 1107 (1997) , “Gettering of iron in silicon-on-insulator wafers”, Kevin L. Beaman, Aditya Agarwal, Oleg Kononchuk, Sergei Koveshnikov, Irina Bondarenko, and George A. RozgonyiGettering of Fe in silicon-on-insulator material has been investigated on both the bonded and separation by implantation of oxygen (SIMOX) platforms. Reduction of electrically active iron in intentionally contaminated and annealed wafers has been measured by deep level transient spectroscopy. These... (Read more)
- 1062. Appl. Phys. Lett. 71, 110 (1997) , “Band gap states of Ti, V, and Cr in 4H–silicon carbide”, Norbert Achtziger and Wolfgang WitthuhnBand gap states of Ti, V, and Cr in n-type 4HSiC were investigated by radiotracer deep level transient spectroscopy (DLTS). Doping with the radioactive isotopes 48V and 51Cr was done by recoil implantation followed by annealing (1600 K). Repeated DLTS measurements... (Read more)
- 1063. Appl. Phys. Lett. 71, 1077 (1997) , “Atomic nitrogen doping in p-ZnSe molecular beam epitaxial growth with almost 100% activation ratio”, K. Kimura, S. Miwa, C. G. Jin, L. H. Kuo, T. Yasuda, A. Ohtake, K. Tanaka, and T. YaoAn almost 100% activation ratio {(NA-ND)/[N]} for a nitrogen-doped ZnSe molecular beam epitaxy (MBE) layer with the highest net acceptor concentration (NA-ND) of 1.2 × 1018 cm... (Read more)
- 1064. Appl. Phys. Lett. 71, 2671 (1997) , “Infrared photothermal radiometric deep-level transient spectroscopy of shallow B + dopant states in p-Si”, A. Salnick, A. Mandelis, and C. JeanInfrared photothermal radiometric deep-level transient spectroscopy (PTR-DLTS) has been applied to noncontact diagnostics of a p-Si wafer. Both negative and positive peaks in the PTR-DLTS signal temperature scans have been detected. A behavior consistent with photoinjected carrier lifetime... (Read more)
- 1065. Appl. Phys. Lett. 71, 2349 (1997) , “Interstitial copper-related center in n-type silicon”, A. A. Istratov, H. Hieslmair, C. Flink, T. Heiser, and E. R. Webern-type silicon samples were measured by deep level transient spectroscopy (DLTS) immediately (within one hour of storage at room temperature, required for the preparation of Schottky-diodes) after copper diffusion and quench. A donor level at Ec-(0.15 ± 0.01) eV... (Read more)
- 1066. Appl. Phys. Lett. 71, 2193 (1997) , “Photoluminescence from C + -implanted SiNxOy films grown on crystalline silicon”, L. S. Liao, Z. H. Xiong, X. Zhou, X. B. Liu, and X. Y. HouCarbon ions at an energy of 35 keV with a dose of 5 × 1016 cm 2 were implanted into SiNxOy films grown on crystalline silicon by plasma enhanced chemical vapor deposition. Intense photoluminescence (PL) peaked at about 550 nm is... (Read more)
- 1067. Appl. Phys. Lett. 71, 2148 (1997) , “The interaction of H2O with an electron paramagnetic resonance center in oxidized, heat treated SiC”, P. J. Macfarlane and M. E. ZvanutWe examine a defect in heat treated, oxidized 6H-SiC with electron paramagnetic resonance spectroscopy. Samples are examined before treatment, after oxidation, after dry (< 10 ppm H2O) N2 heat treatment, and after standard (approximately 50 ppm H2O) Ar annealing.... (Read more)
- 1068. Appl. Phys. Lett. 71, 2142 (1997) , “Enhancement of secondary electron emission from heavily Si-implanted and Si-doped GaAs”, F. Iwase and Y. NakamuraThe enhancement of secondary electron emission was observed for both heavily Si-implanted and heavily Si-doped GaAs after annealing at 950 °C. The enhancement was found to be related to the generation of Ga vacancy during annealing. The assessment of electrical properties of the enhanced area... (Read more)
- 1069. Appl. Phys. Lett. 71, 2133 (1997) , “Correlation of two diamagnetic bands of the magnetic circular dichroism of the optical absorption with EL20 in GaAs”, K. H. Wietzke and F. K. KoschnickIn a previous investigation, a diamagnetic band of the magnetic circular dichroism of the optical absorption (MCDA) in semi-insulating GaAs centered at 1.19 eV was observed and attributed to the neutral diamagnetic charge state of EL2, EL20. In this letter, we show a direct correlation... (Read more)
- 1070. Appl. Phys. Lett. 71, 1843 (1997) , “Observation of Ga vacancies in silicon δ-doping superlattices in (001) GaAs”, T. Laine, K. Saarinen, J. Mäkinen, P. Hautojärvi, and C. CorbelPositron annihilation experiments have been performed to investigate the compensating defects in silicon δ-doping superlattices in (001) GaAs. The results reveal vacancies and ion-type defects, which are located between the delta planes in undoped GaAs. The vacancy defect is identified as the... (Read more)
- 1071. Appl. Phys. Lett. 71, 1837 (1997) , “Ionized donor bound excitons in GaN”, B. antic, C. Merz, U. Kaufmann, R. Niebuhr, H. Obloh, and K. BachemThe temperature and excitation power dependence of a bound exciton photoluminescence line S with a localization energy Q = 11.5 meV has been studied in undoped and moderately Mg-doped wurtzite GaN of high resistivity. The data provide strong evidence that line S is due to... (Read more)
- 1072. Appl. Phys. Lett. 71, 1682 (1997) , “Compensating defect in deep buried layers produced by MeV heavy ions in n-silicon”, P. K. Giri and Y. N. MohapatraBuried damaged layers in n-silicon created by implantation of MeV heavy ions (Ar+) have been studied by capacitance and current measurements, and spectroscopic techniques such as deep level transient spectroscopy and constant capacitance time analyzed transient spectroscopy. We... (Read more)
- 1073. Appl. Phys. Lett. 71, 1531 (1997) , “Monitoring of ion implantation in Si with carrier plasma waves using infrared photothermal radiometry”, A. Salnick, A. Mandelis, F. Funak, and C. JeanPhotothermal infrared radiometry was used for monitoring the ion implantation in Si wafers implanted with phosphorus to doses in the range of 5 × 10101 × 1016 ions/cm2 at different implantation energies. Quantitative results on the sensitivity of... (Read more)
- 1074. Appl. Phys. Lett. 71, 2993 (1997) , “The V3 + center in AlN”, P. Thurian, I. Loa, P. Maxim, A. Hoffmann, and C. ThomsenWe investigated the magnetooptical properties of 0.9 eV luminescence in AlN. The zero-phonon lines at 0.943 eV in AlN are attributed to a transition within a d2 configuration because of a characteristic threefold ground-state splitting in magnetic fields. We determine a g... (Read more)
- 1075. Appl. Phys. Lett. 71, 2975 (1997) , “Direct excitation spectroscopy of Er centers in porous silicon”, M. Stepikhova, W. Jantsch, G. Kocher, and L. PalmetshoferWe report direct excitation of optically active Er centers in porous Si. Excitation spectroscopy performed close to the intracenter 4I15/2 " align="bottom">4I11/2 and 4I15/2 " align="bottom">4I9/2 transitions of... (Read more)
- 1076. Appl. Phys. Lett. 71, 2970 (1997) , “Atomic origin of deep levels in p-type GaN: Theory”, D. J. ChadiExperimentally identified deep levels in p-type GaN at approximately 0.91, 1.4, and 1.82 eV above the valence-band maximum have been attributed to Ga vacancies. From the results of first-principles calculations, we find that from both energetic and electronic level structure... (Read more)
- 1077. Appl. Phys. Lett. 71, 2668 (1997) , “Observation of boron bound excitons in boron-implanted and annealed natural IIa diamonds”, H. Sternschulte, S. Wahl, K. Thonke, and R. SauerCathodoluminescence at 77 K was used to study the optical properties of ion-implanted and annealed natural type IIa diamonds. The substrates were implanted at room temperature with 12C+, 11B+, 31P+, and 75As+... (Read more)
- 1078. Appl. Phys. Lett. 72, 79 (1998) , “Positive charging of thermal SiO2/(100)Si interface by hydrogen annealing”, V. V. Afanas'ev and A. StesmansAnnealing of SiO2/(100)Si interfaces in hydrogen in the temperature range of 500800 °C is found to introduce a considerable density of fixed positive charge. The charge is diamagnetic, and shows no correlation with any kind of dangling bond defects at the Si surface or in the... (Read more)
- 1079. Appl. Phys. Lett. 72, 70 (1998) , “Excitation density dependence of photoluminescence in GaN:Mg”, Eunsoon Oh, Hyeongsoo Park, and Yongjo ParkContinuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally... (Read more)
- 1080. Appl. Phys. Lett. 72, 67 (1998) , “Capture of vacancies by extrinsic dislocation loops in silicon”, S. B. Herner, H.-J. Gossmann, F. H. Baumann, G. H. Gilmer, and D. C. JacobsonThe capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping superlattices containing a band of dislocation loops in NH3 results in an injection of vacancies, which enhances the diffusion of Sb spikes... (Read more)
- 1081. Appl. Phys. Lett. 72, 244 (1998) , “Optical properties of GaN grown over SiO2 on SiC substrates by molecular beam epitaxy”, John T. Torvik and Jacques I. PankoveWe investigate the optical properties of GaN grown over SiO2 on SiC substrates by electron cyclotron resonance assisted molecular beam epitaxy. The photoluminescence spectra and refractive index of GaN were compared for GaN/SiO2/SiC and GaN/SiC. Strong band-edge luminescence... (Read more)
- 1082. Appl. Phys. Lett. 71, 3658 (1997) , “Boron implantation doping of diamond”, B. Ittermann, K. Bharuth-Ram, H. Metzner, M. Füllgrabe, M. Heemeier, F. Kroll, F. Mai, K. Marbach, P. Meier, D. Peters, H. Thieß, H. Ackermann, H.-J. Stöckmann, and J. P. F. SellschopSpin polarized 12B nuclei were produced in a 11B(d,p)12B nuclear reaction and recoil implanted into a type Ib diamond sample at doses below 1011 cm2. β-radiation detected nuclear magnetic resonance spectra were... (Read more)
- 1083. Appl. Phys. Lett. 71, 3269 (1997) , “Auger recombination in 4H-SiC: Unusual temperature behavior”, A. Galeckas, J. Linnros, and V. GrivickasThe band-to-band Auger recombination in 4H-SiC material is studied using a time-resolved photoinduced absorption technique. The Auger recombination coefficient is derived from the kinetics of electron-hole plasma in heavily doped n-type 4H-SiC and in low-doped 4H-SiC epitaxial layers in the... (Read more)
- 1084. Appl. Phys. Lett. 71, 3209 (1997) , “Evolution of defect-related structure in the x-ray absorption spectra of buried SiNx films”, E. C. PalouraNear-edge x-ray absorption fine structure measurements at the N-K edge are used to monitor the evolution of defect-related structure in the spectra of buried SiNx films as a function of the implantation dose. The buried SiNx films were fabricated with... (Read more)
- 1085. Appl. Phys. Lett. 71, 3126 (1997) , “A physically based predictive model of Si/SiO2 interface trap generation resulting from the presence of holes in the SiO2”, P. M. LenahanA physically based model is developed which explains apparently unrelated aspects of the Si/SiO2 interface trap generation process; the predictions of the model are in at least semiquantitative agreement with observations previously reported in the literature. The model involves... (Read more)
- 1086. Appl. Phys. Lett. 72, 474 (1998) , “The dissociation energy and the charge state of a copper-pair center in silicon”, A. A. Istratov, H. Hieslmair, T. Heiser, C. Flink, and E. R. WeberThermal dissociation of Cu pairs was studied in p-type silicon. The dissociation energy of the Cu pair was found to be 1.02 ± 0.07 eV, twice as high as the binding energy of a Coulombically bound donor-acceptor pair placed on nearest neighbor 111" align="middle"> sites. This implies that... (Read more)
- 1087. Appl. Phys. Lett. 72, 468 (1998) , “Deep levels in Er-doped liquid phase epitaxy grown silicon”, A. Cavallini and B. FraboniThe optical activity of Er-doped silicon is related to the presence of defects which enhance the typical radiative transition at 0.8 eV but whose nature and properties are still largely unknown. We have investigated the deep levels present in Er-doped liquid phase epitaxy silicon to identify the... (Read more)
- 1088. Appl. Phys. Lett. 72, 459 (1998) , “Doping of AlxGa1 – xN”, C. Stampfl and Chris G. Van de WalleN-type AlxGa1 xN exhibits a dramatic decrease in the free-carrier concentration for x= " align="bottom">0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: (i) in the case of doping with... (Read more)
- 1089. Appl. Phys. Lett. 72, 448 (1998) , “Electron-irradiation-induced deep level in n-type GaN”, Z.-Q. Fang, J. W. Hemsky, and D. C. LookDeep-level transient spectroscopy measurements of n-type GaN epitaxial layers irradiated with 1-MeV electrons reveal an irradiation-induced electron trap at EC 0.18 eV. The production rate is approximately 0.2 cm 1, lower than the rate of 1... (Read more)
- 1090. Appl. Phys. Lett. 72, 442 (1998) , “The behavior of As precipitates in low-temperature-grown GaAs”, J. C. BourgoinWe analyze the kinetics associated with the concentration and the growth of As precipitates during annealing in low-temperature-grown GaAs layers. We correlate them with that associated with the annealing of the As antisite related defect. This allows us to deduce that all these kinetics are... (Read more)
- 1091. Appl. Phys. Lett. 72, 371 (1998) , “Microscopic nature of Staebler-Wronski defect formation in amorphous silicon”, R. Biswas and B. C. PanLight-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H2*" align="middle">... (Read more)
- 1092. Appl. Phys. Lett. 72, 302 (1998) , “Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP”, R. Ajjel, M. A. Zaidi, and S. AlayaThe electrical properties of chromium-related defects in GaP are investigated. Using deep-level transient spectroscopy, a related deep level is observed in p-type GaP exhibiting an activation energy, associated with hole emission, of 0.5 eV. Detailed capacitance transient investigations were... (Read more)
- 1093. Appl. Phys. Lett. 72, 200 (1998) , “Carbon-induced undersaturation of silicon self-interstitials”, R. Scholz and U. GöseleCarbon diffusion into silicon is well behaved and does not generate any nonequilibrium point defects. We show that, in contrast, the diffusion of carbon incorporated in silicon well above its solid solubility will cause an undersaturation of silicon self-interstitials, which in turn may cause... (Read more)
- 1094. Appl. Phys. Lett. 72, 728 (1998) , “Local environment of erbium atoms in amorphous hydrogenated silicon”, V. F. Masterov, F. S. Nasredinov, and P. P. SereginThe 169Er(169Tm)emission Mössbauer spectroscopy has evidenced that photoluminescence centers in Er-doped amorphous hydrogenated silicon are [ErO] clusters. The local environment of the Er3 + ions in the clusters is similar to the Er3 + ... (Read more)
- 1095. Appl. Phys. Lett. 72, 590 (1998) , “Annealing effect on concentration of EL6-like deep-level state in low-temperature-grown molecular beam epitaxial GaAs”, J. Darmo and F. DubeckýA deep-level donor state with signatures similar to the EL6 level observed in low-temperature-grown molecular beam epitaxial (MBE) GaAs grown at 250 °C and annealed in the temperature range 310370 °C was studied. The annealing kinetics of this level suggest a confined pair... (Read more)
- 1096. Appl. Phys. Lett. 72, 554 (1998) , “Hydrogen-related photoluminescence in CdTe”, J. Hamann, D. Blass, C. Casimir, T. Filz, V. Ostheimer, C. Schmitz, H. Wolf, and Th. WichertCdTe, nominally undoped, was exposed to a hydrogen plasma and to low energy H+ implantation. Under both conditions, seven typical photoluminescence lines are observed in the excitonic region. They are assigned to the presence of hydrogen in CdTe. ©1998 American Institute of... (Read more)
- 1097. Appl. Phys. Lett. 72, 1472 (1998) , “Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser”, Takashi Sugino, Hideaki Ninomiya, and Junji ShirafujiPhosphidization of GaAs surfaces is attempted with phosphine gas photodecomposed by an ArF excimer laser. Electron traps at and near the phosphidized GaAs surfaces are characterized by isothermal capacitance transient spectroscopy measurements. Phosphidization leads to a reduction in the trap... (Read more)
- 1098. Appl. Phys. Lett. 72, 1362 (1998) , “Thermal donors in silicon-rich SiGe”, E. HildWe have investigated thermal donor formation at 450 °C in oxygen-rich SiGe with more than 1% Ge content by Hall measurements and infrared spectroscopy. These measurements prove the presence of double donors in annealed Si-rich SiGe samples. The ionization energies of the donors correspond to... (Read more)
- 1099. Appl. Phys. Lett. 72, 1347 (1998) , “Oxygen participation in the formation of the photoluminescence W center and the center's origin in ion-implanted silicon crystals”, M. NakamuraThe relationship between the photoluminescence (PL) intensity due to the W (or I1) center and the oxygen concentration in implanted silicon crystals was studied. The PL intensity of the W center decreased consistently with increasing oxygen concentration for carbon-implanted... (Read more)
- 1100. Appl. Phys. Lett. 72, 1326 (1998) , “Nature of the 2.8 eV photoluminescence band in Mg doped GaN”, U. Kaufmann, M. Kunzer, M. Maier, H. Obloh, A. Ramakrishnan, B. Santic, and P. SchlotterThe blue Mg induced 2.8 eV photoluminescence (PL) band in metalorganic chemical vapor deposition grown GaN has been studied in a large number of samples with varying Mg content. It emerges near a Mg concentration of 1 × 1019 cm 3 and at higher concentrations... (Read more)
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