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- 101. Physica 116B, 219 (1983) , “Negative-U Properties of the Lattice Vacancy in Silicon”, J. L. Newton, A. P. Chatterjee, R. D. Harris, G. D. Watkins.We present direct and unambiguous evidence that the donor levels of the silicon lattice vacancy are inverted in negative-U ordering, as originally suggested by Baraff et al. The second donor level, at Ev + 0.13 eV, lies above the first donor level, at Ev + 0.05 eV. First, we demonstrate that the Ev + 0.13 eV level is a donor state by the absence of the Poole-Frenkel effect in DLTS studies. Second, we describe a detailed EPR study of reactions involving hole transfer via the valence band between the vacancy and the shallow alminium accepter. By monitoring the intensity of the V+ and Also EPR signals, all aspects of the negative-U ordering appear to be confirmed. (Read more)
- 102. Physica B 116, 583-593 (1983) , “Investigations of well defined dislocations in silicon”, H. Alexander, C. Kisielowski-Kemmerich, E. R. WeberThe velocity v of dislocation half-loops introduced into swirl-free floating-zone grown undoped silicon has been measured at 420°C in the resolved shear stress range 30 <τ<300 MPa. Clearly impurity atoms interact with dislocations in this material. Using the starting value of v we found the two types of 60° dislocations, which are distinguished by the sequence of their partials, to have different velocities. Furtheron the velocity depends not only on τ, but also on the elastic strain of the lattice. In the second part the papers review EPR spectroscopy of plastically deformed silicon and collects new results on the activity of dislocations in this material as trapping / recombination centers (decay of photo-EPR, photoluminescence, EBIC microscopy and photoplastic effect). (Read more)
- 103. Physica 116B, 564 (1983) , “Experimental Tests of Non-Thermal Effect for Pulsed-Laser Annealing by Time-Resolved Reflectivity and EPR Measurements”, K. Murakami, K. Masuda, Y. Aoyagi, S. Namba.Experimental tests of non-thermal effect for pulsed laser annealing (PLA) of semiconductor have been done by means of two techniques. One is time-resolved reflectivity measurement during single 30-ps PLA of amorphous GaAs. An anomalous dynamic behavior is observed at an energy-density window, i.e, a reflectivity dip appears after the disappearance of the high reflectivity phase, concomitant with final production of a new amorphous GaAs state. This result cannot be interpreted in terms of the simple thermal effect. The other is EPR measurement of Si samples which are implanted and then annealed by 40-ns pulsed laser. No EPR results of N donors in Si support positively a non-thermal effect, while it is difficult to explain EPR results of laser-induced paramagnetic defects only by the simple thermal annealing model. (Read more)
- 104. Phys. Rev. Lett. 48, 37 (1982) , “Optical Detection of Magnetic Resonance for a Deep-Level Defect in Silicon”, K. M. Lee, K. P. O'Donnell, J. Weber, B. C. Cavenett, and G. D. WatkinsOptical detection of magnetic resonance is reported for the 0.97-eV luminescence in neutron-irradiated silicon. The resonance is of an excited triplet (S=1) state of the defect, which is not the radiative state, known to be a singlet (S=0). The spectrum is unusual in that it is characteristic of a... (Read more)
- 105. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 106. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
- 107. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbonsubstitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon molecule... (Read more)
- 108. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 109. Phys. Rev. B 14, 872-883 (1976) , “EPR of a <001> Si interstitial complex in irradiated silicon”, K. L. Brower.This paper deals with an electron-paramagnetic-resonance study of the Si-B3 center, which was first reported by Daly. The Si-B3 center is a secondary defect which forms upon annealing between 50 and 175C in irradiated boron-doped silicon and is stable up to ?500C. Our studies indicate that the... (Read more)
- 110. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the V= charge state. The vacancy has four charge states, V+, V0, V- and V=. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and V- are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 111. Phys. Rev. B 14, 4506 (1976) , “EPR study of neutron-irradiated silicon: A positive charge state of the <100> split di-interstitial”, Young-Hoon Lee, Nikolai N. Gerasimenko, and James W. CorbettThe Si-P6 spectrum shows an intrinsic tetragonal symmetry with the C2 axis along ?100? and distortion forces the principal axes of the g tensor to be displaced in the {100} plane. The g tensor previously identified by Jung and Newell was found to be due to the motionally averaged state... (Read more)
- 112. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 113. phys. stat. sol. (a) 72, 701-713 (1982) , “On the Energy Spectrum of Dislocations in Silicon”, V. V. Kveder, Yu. A. Osipyan, W. Schrter, G. Zoth.Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized... (Read more)
- 114. phys. stat. sol. (a) 55, 251 (1979) , “Photo-EPR of Dislocations in Silicon”, R. Erdmann, H. Alexander.The dependence of the EPR spectrum of dislocations in deformed silicon on illumination with monochromatic light reveals the two EPR centers Si - K1 (S < 1/2) to be different ionization states of one and the same dislocation center. The energy level separating these ionization states lies near the... (Read more)
- 115. J. Phys. Chem. Solids 31, 1381 (1970) , “The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation”, F. D. Wohler and H. AlexanderW. SanderIn silicon an EPR signal is produced by plastic deformation. The annealing behavior of this signal has been investigated, and the dislocation density and structure has been studied by the etch pit technique and by electron microscopy. The EPR-signal anneals in one stage with an activation energy of... (Read more)
- 116. Sov. Phys. JETP 39, 721 (1974) , “Investigation of the Properties of the Dislocation EPR Spectra in Silicon”, S. V. Broude, V. A. Grazhulis, V. V. Kveder, Yu. A. Osipyan.We investigated the properties of the dislocation sEPR spectra in Si in the temperature interval from 1.3 to 150ºK. At helium temperatures we observed anomalies in the behavior of the dispersion signals χ' under conditions of adiabatic rapid passage (APR) through resonance. It is shown that the spectrum of the D centers has a hyperfine (hf) structure, with a line width ∆Hi ~0.2-0.3 Oe (the distance between neighboring hf lines is of the order of their width). It is established that under ARP conditions excitations are transferred between the hf lines as a result of spin-spin interactions with a characteristic time τ3, equal to 3-10 sec in the range 1.3-4.2ºK and weakly dependent on the temperature and on the microwave power. We measured the dependence of the integrated intensity of the absorption signals χ'' on the temperature in the 20-150ºK range. A strong deviation from the Curie low was observed at T=40-50ºK. The temperature dependence of the quantity τ1τ2 was measured in the same temperature range, under the assumption that the hf lines have a Lorentz shape. An anomaly at T=40-50ºK was observed also on the plot of τ1τ2=f(1/T). It is concluded that a magnetic phase transition takes place in the D-center system at 40-50ºK, and consequently the dislocations in Si can be regarded as models of one-demensional chain of spins with exchange interactions.
- 117. Sov. Phys. JETP 33, 623 (1971) , “Electron paramagnetic resonance of dislocations in silicon”, V. A. Grazhulis, Yu. A. Osip'yan
- 118. Sov. Phys. Solid State 28, 1862 (1986) , “Electron states having spin S ≥ 1 at dislocations in silicon”, M. N. Zolotukhin
- 119. Solid State Commun. 3, 357 (1965) , “Elektronenspin-Resonanz in Verformtem Silizium”, H. Alexander, R. Labusch and W. SanderBei 800°C verformte Silizium-Kristalle zeigen ein Elektronenspinresonanz-Signal, dessen Intensität mit der Versetzungsdichte zunimmt. Wir vermuten, daβ dieses Signal von ungepaarten Elektronen im Kern von Versetzungen stammt. Durch die Verformung wird die Bildung von Atomgruppen in... (Read more)
- 120. Phys. Rev. B 32, 6571 (1985) , “Electrical Properties of Dislocations and Point Defects in Plastically Deformed Silicon”, P. Omling, E. R. Weber, L. Montelius, H. Alexander, J. Michel.Energy levels of defect states introduced by plastic deformation of n-type silicon have been studied by capacitance transient spectroscopy. From the observed properties of the defects, it is concluded that two different types of defects are produced. The first type is interpreted as point defects... (Read more)
- 121. Sov. Phys. JETP 31, 677-679 (1970) , “Electron Paramagnetic Resonance in Plastically Deformed Silicon”, V. A. Grazhulis, Yu. A. Osipyan.Lightly doped silicon crystals were investigated experimentally by the electron paramagnetic resonance method. Paramagnetic centers, generated during plastic deformation of these crystals, were detected. The concentration of these centers increased monotonically with increasing degree of deformation. The EPR spectrum of these centers was anisotropic and had a partially resolved fine structure. The centers werestrongly annealed only at temperature T ≧ 600ºC and the activation energy of the annealing process was ~2 eV. It was concluded that these centers were due to electrons of broken bonds in the cores of dislocations with edge components.
- 122. phys. stat. sol. (a) 168, 73 (1998) , “Self-Interstitials in Silicon Irradiated with Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii.The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si-O)i) with deep level transient spectroscopy (DLTS) and electron... (Read more)
- 123. Semicond. Sci. Technol. 11, 1696-1703 (1996) , “Metastable oxygen - silicon interstitial complex in crystalline silicon”, Kh. A. Abdullin, B. N. Mukashev, Yu. V. Gorelkinskii.A new metastable complex in monocrystalline silicon irradiated at with protons has been studied. Electron paramagnetic resonance (EPR) Si-AA13 ( symmetry) and Si-AA14 ( symmetry) spectra as well as the known Si-A18 spectrum originate from different molecular configurations of the complex. A... (Read more)
- 124. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 125. Mater. Sci. Eng. B 36, 77 (1996) , “New Oxygen-Related EPR Spectra in Proton-Irradiated Silicon”, Kh. A. Abdullin, B. N. Mukashev, A. M. Makhov and Yu. V. GorelkinskiiAn electron-paramagnetic resonance (EPR) study of proton-irradiated silicon has revealed two new EPR spectra labeled Si-AA13 and Si-AA14. Spectrum AA13 has C3v symmetry (g = 1.9985 and g = 2.0024 ± 0.0002), AA14 C1 symmetry. These spectra correspond to positive (B+) and negative (B−)... (Read more)
- 126. Phys. Rev. B 35, 1582 (1987) , “Electronic and Atomic Structure of the Boron-Vacancy Complex in Silicon”, M. Sprenger, R. van Kemp, E. G. Sieverts, and C. A. J. AmmerlaanIn electron-irradiated boron-doped silicon the electron paramagnetic resonance spectrum Si-G10 has been studied. Earlier this spectrum had tentatively been identified with a boron-vacancy complex in a next-nearest-neighbor configuration. With electron-nuclear double resonance the hyperfine and... (Read more)
- 127. Mater. Res. Soc. Symp. Proc. 46, 227 (1985) , “Defect Identification in Silicon Using Electron Nuclear Double Redonance”, C. A. J. Ammerlaan, M. Sprenger, R. van Kemp, D. A. van Wezep.The application of electron nuclear double resonance (ENDOR) for identification and characterization of point defects in silicon is reviewed. Taking the vacancy and the boron-vacancy complex as examples it is discussed how ENDOR can provide information on the atomic and electronic structure of paramagnetic centers.
- 128. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 129. phys. stat. sol. (a) 92, K53 (1985) , “Low Symmetry Centre in Silicon”, A. V. Dvurechenskii, V. V. Suprunchik.Investigation of the defect formation in heavily doped silicon irradiated by high dose of electrons have led to the discovery of new types of defects /1, 2/. The present note is the next one of this series. A new centre is investigated in p-type silicon irradiated by neutrons. (Read more)Si| EPR neutron-irradiation| A5 C1 H8 P3 P6 Sii Vsi interstitial p-type triclinic vacancy .inp files: Si/H8/H8.inp | last update: Takahide Umeda
- 130. Phys. Lett. A 99, 117 (1983) , “Low-Symmetry EPR Center in Hydrogen-Implanted Silicon”, Yu.V. Gorelkinskii, N.N. NevinnyiA new S = 1/2 EPR spectrum, labeled Si-AA2, arises from a negative-charge-state defect which has a low symmetry(C1). It is produced in crystalline silicon by hydrogen implantation at ≈20°C followed by annealing at ≈580°C and disappears completely at 700°C. The kinetics... (Read more)Si| EPR ion-implantation| 29Si AA2 C1 Hydrogen Si-H Vsi cluster(>3) p-type triclinic vacancy .inp files: Si/AA2/AA2.inp | last update: Takahide Umeda
- 131. Phys. Rev. B 9, 4351-4361 (1974) , “EPR study of defects in neutron-irradiated silicon: Quenched-in alignment under <110>-uniaxial stress”, Young-Hoon Lee and James W. CorbettThe stress effect in an EPR study is first treated rigorously in terms of the piezospectroscopic tensor, taking account of the local symmetry of a defect. It is found that the degree of alignment (n?/n?) provides incisive information on the structure of a defect; in general, a... (Read more)
- 132. Semicond. Sci. Technol. 10, 977 (1995) , “EPR and ENDOR Observation of Orthorhombic Au-Li and Pt-Li Pairs in Silicon: on the Problem of the Observation of Isolated AuSi0 with Magnetic Resonance”, S. Greulich-Weber, P. Alteheld, J. Reinke, H. Weihrich, H. Overhof, J. M. Spaeth.We report the observation of orthorhombic Au-Li and Pt-Li pairs in Si using EPR and ENDOR techniques and also MCDA spectroscopy. The EPR spectra alone could be mistaken as being due to orthorhombic isolated point defects and ENDOR is required to detect the Li partner of the pair. Comparison of the... (Read more)
- 133. Phys. Rev. Lett. 79, 1507 (1997) , “Identification of the Silicon Vacancy Containing a Single Hydrogen Atom by EPR”, B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen
- 134. Phys .Rev. Lett. 92, 178302 (2004) , “Nonvolatile Memory with Multilevel Switching: A Basic Model”, M. J. Rozenberg, I. H. Inoue, and M. J. SánchezThere is a current upsurge in research on nonvolatile two-terminal resistance random access memory (RRAM) for next generation electronic applications. The RRAM is composed of a simple sandwich of a semiconductor with two metal electrodes. We introduce here an initial model for RRAM with the... (Read more)
- 135. Jpn. J. Appl. Phys. 24, 279 (1985) , “Solubility and Diffusion Coefficient of Oxygen in Silicon ”, Yoshiko Itoh and Tadashi NozakiThe solubility and diffusion coefficient of oxygen in silicon between 1000°C and 1375°C were examined by charged particle activation analysis with the 16O(3He, p)18F reaction, in which oxygen was activated with an equal probability over the depth of up to 250... (Read more)
- 136. Jpn. J. Appl. Phys. 32, L1715 (1993) , “Carbon-Induced Rapid Annihilation of Thermal Double Donors in Czochralski Silicon Studied by Infrared Absorption Spectroscopy ”, Yoichi Kamiura*1, Yutaka Uno*2 and Fumio HashimotoCarbon-rich Czochralski Si shows anomalously rapid annihilation for all the species of thermal double donors at 470°C in two stages, which have good time correlations with the decrease of substitutional carbon density and also with the formation of two kinds of carbon-related new donors which... (Read more)
- 137. Appl. Phys. Lett. 93, 113504 (2008) , “Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode”, Hisashi Shima, Fumiyoshi Takano, Hidenobu Muramatsu, Hiro Akinaga, Yukio Tamai, Isao H. Inque, and Hidenori Takagi,Structural and resistance switching properties were investigated in the CoO resistance random access memory (RRAM) with the Ta electrode. The intermediate layer consisting of Co and Ta oxides was confirmed at the interface by the transmission electron microscopy and electron energy loss... (Read more)
- 138. Phys. Rev. B 58, 3842 (1998) , “Electron Paramagnetic Resonance Study of Hydrogen-Vacancy Defects in Crystalline Silicon”, P. Stallinga, P. Johannesen, S. Herstm, K. Bonde Nielsen, B. Bech Nielsen, J. R. Byberg.Electron paramagnetic resonance measurements on float-zone silicon implanted with protons at ?50 K followed by heating to room temperature have revealed two signals S1a and S1b belonging to the S1 group of signals. S1a and S1b both originate from defects... (Read more)
- 139. Phys. Rev. Lett. 2, 39 (1959) , “ELECTRON SPIN RESONANCE OF ACCEPTOR STATES IN DIAMOND”, W. V. Smith, I. L. Gelles, and P. P. SorokinPrevious work reporting electron spin resonance in diamond has been concerned exclusively with paramagnetic centers produced by irradiation with fast neutrons. Using standard resonance techniques we have recently detected at room temperature a family of weak, narrow resonance lines near g=2... (Read more)
- 140. J. Appl. Phys. 42, 864 (1971) , “New EPR Spectra in Irradiated Silicon”, D. F. Daly.The purpose of this brief note is to report the spin Hamiltonian parameters for two new EPR spectra that have been observed in annealed irradiated silicon. Comparisons are also made with the parameters of centers already belonging to the extensive catalogue of EPR spectra in silicon. In acordance... (Read more)
- 141. Phys. Rev. Lett. 10, 220 (1963) , “ELECTRON PARAMAGNETIC RESONANCE INVESTIGATION OF THE VACANCY IN DIAMOND”, John A. Baldwin, Jr.Griffiths, Owen, and Ward reported that diamonds exposed to reactor neutrons developed an intense isotropic electron paramagnetic resonance (EPR) absorption lone whose g value was very close to that of the free electron. They found that a similar line was produced by 1-MeV electrons. The work herein... (Read more)
- 142. Appl. Phys. Lett. 8, 280 (1966) , “SILICON SELF-DIFFUSION”, B. J. Masters and J. M. FairfieldThe process of self-diffusion within the silicon lattice is of considerable interest, not only for the development of diffusion theory, but also because of the limitation it imposes upon the fabrication of semiconductor devise structures. Several authors have estimated the activation energy of... (Read more)
- 143. J. Cryst. Growth 264, 1-6 (2004) , “Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film”, Y. J. Park , C. S. Oh , T. H. Yeom, Y. M. YuWe have observed the nagnetic resonance of conduction electrons in n-type indium antimonide, by the "heating" of the electron kinetic-energy temperature via the slsctron spins. This is the first direct evidence suggesting a contribution of spin-orbit coupling to relaxation in this system. In a steady-state spin-resonance experiment, a power PS=(M0=MZ)H/T1 is transferred to the systems(reservoirs) towards which the spins relax. Here, M0 is the equilibrium magnetization, MZ the component of the magnetization along the magnetic field H, and T1 the relaxation time. The reservoir of interest in our case is the kinetic energy of the eledtrons, and this is detected by an increase in the mobility μ. To our knowledge. this is the first observation of the power flow, due to relaxation, from the spins to a reservoir,applied to the ditection of magnetic resonance of conduction-electron spins. It differs in principle from usual spin-resonance observation methods, which are based on electromagnetic interactions of the spin system, such as the voltage induced in a resonator by the rotating magnetic moment, or again such as power absorption PS=MyHx from the rotating field Hx by the out-of- phase component My.Besides providing information on the relaxation mechanism, the present method (that we call "ralaxation" method) should also in some cases by much more sensitive than the usual "electromagnetic" detection methods. (Read more)
- 144. Eur. Phys. J. Appl. Phys. 27, 13-19 (2004) , “Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM”, T. Umeda, A. Toda, Y. MochizukiProcess-induced defects are a serious issue for modern sub-micron Si LSIs. To characterize such defects, two different techniques are useful: electrically detected magnetic resonance (EDMR) and transmission electron microscope (TEM), which can detect small (point) and extended defects, respectively. We applied EDMR and TEM to the issue of defect-induced leakage currents in dynamic-random-access memory (DRAM) cells. For our DRAM samples (a 0.25- μm-rule series), although TEM showed no extended defects, EDMR successfully detected two types of point defects: V2+O x (Si divacancy-oxygen complexes) and larger Si vacancies (at least larger than V6). We confirmed that these defects are the source of DRAM leakage currents. The observed defects were formed by ion implantation processes, but were more thermally stable than those in bulk Si crystals. The origins of this enhanced stability are attributed to the presence of oxygen atoms and a strong mechanical strain in LSIs. To clarify the origin of the complicated strain in LSI structures, we can directly measure the local-strain distribution in DRAM samples by means of convergent-beam electron diffraction (CBED) using TEM, which provides us with a valuable hint for understanding the formation mechanism of process-induced defects. (Read more)
- 145. Physica B 308, 816 (2001) , Elsevier Science , “Rhodium-related deep levels in n-type MOCVD GaAs ”, M. Zafar Iqbal, A. Majid, S. Haidar Khan, Akbar Ali, Nasim Zafar, A. Dadgar and D. BimbergPreliminary results on the study of deep levels associated with 4d-transition metal, rhodium, in crystalline GaAs grown by metal-organic chemical vapour deposition (MOCVD) technique are reported for the first time. Deep level transient spectroscopy on n-type GaAs doped in situ with Rh during MOCVD growth reveals a broad majority carrier emission peak. The peak corresponds to a band of deep levels extending over the energy range 0.57–0.65 eV below the conduction band edge with lower-energy states having lower electron capture cross-sections. The deep levels show a pronounced dependence of electron emission rate on the junction electric field. Minority carrier (hole) emission spectra at zero bias show a pronounced Rh-related deep-level peak with a low-temperature shoulder. The dominant level in the lower half-gap is found to have a position Ev+0.44 eV, with a field-dependent emission rate signature. (Read more)
- 146. Phys. Rev. Lett. 85, 417 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. L. La?mann, S. Vo?, H. Bracht.Electric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a 2T2 state split by spin-orbit interaction into Γ8 and Γ7 this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the electronic state as is expected for a Jahn-Teller effect. (Read more)
- 147. Physica B 273, 837 (1999) , Elsevier Science , “Deep levels associated with alpha irradiation of n-type MOCVD InP”, M. Zafar Iqbal, U. S. Qurashi, A. Majid, Aurangzeb Khan, Nasim Zafar, A. Dadgar, D. BimbergDeep level transient spectroscopy has been used to observe the effect of alpha particle irradiation on n-type InP grown by metal organic chemical vapour deposition (MOCVD). Eight majority carrier emitting levels Eα1, Eα2, …, Eα8 are found to be produced as a result of this irradiation. At least two of the observed levels (Eα2 and Eα4) are found to show interesting metastable behaviour. One important result of this work is complete absence of the well-known metastable M-level (observed in electron irradiated LEC InP) in our alpha-irradiated MOCVD material. (Read more)
- 148. Phys. Solid State 41, 712 (1999) , “Radiospectroscopy of wide-gap semiconductors: SiC and GaN”, P. G. BaranovThe present report submitted to the Anniversary Conference of the A. F. Ioffe Physicotechnical Institute, “Physics at the Turn of the 21st Century,” deals with recent EPR studies of main impurities in the wide-gap semiconductors SiC and GaN, which appear to be the most promising materials for microelectronics and quantum semiconductor electronics at the start of the 21st century. (Read more)
- 149. Phys. Solid State 41, 783 (1999) , “Transition and rare-earth elements in the SiC and GaN wide-gap semiconductors: recent EPR studies”, P. G. Baranov, I. V. Il'in, E. N. Mokhov, V. A. KhramtsovEPR studies of transition-element ions in SiC and GaN and of erbium in 6H-SiC are reported. Data are presented on Sc2+ ions and scandium acceptors, and chromium and molybdenum ions in various charge states in SiC. A study was made of nickel and manganese in nominally pure GaN grown by the sandwich sublimation method. The first EPR investigation of Er in 6H-SiC is reported. Erbium was identified from the hfs of the EPR spectra. Various possible models of erbium centers in silicon carbides are discussed. Strong room-temperature erbium-ion luminescence was observed. (Read more)
- 150. Phys. Rev. Lett. 73, 1456 (1994) , “Comment on "Electron Paramagnetic Resonance of Molecular Hydrogen in Silicon"”, K. L. Brower, S. M. Myers, A. H. Edwards, N. M. Johnson, C. G. Van de Walle, E. H. Poindexter.Stallinga, Gregorkiewicz, Ammerlaan, and Gorelkinskii report the discovery of anew paramagnetic defect (NL52) in hydrogen-implanted and annealed silicon which they identify as s negatively charged <111> molecular hydrogen interstitial in silicon [1]. We discuss first the inconsistencies in this... (Read more)
- 151. Hyperfine Interactions 84, 397 (1994) , “Studies of divacancy in Si using positron lifetime measurement ”, Studies of divacancy in Si using positron lifetime measurementThe charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V2 2-, V2 – and V2 0 at 300 K were about 6×10-14, 3×10-14 and 0.1–3×10-14 cm2, respectively. For V2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V2 0 and V2 2- have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V2 0 ) and 21 meV (V2 2- ). The appearance of a shallow level for V2 0 can not be explained by a conventional "Rydberg state" model. The lifetime (290–300 ps) in V2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V2 2- increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V2 2- is shorter than that in V2 0 at low temperature, which is due to the excess electron density in V2 2- . At high temperature, however, the longer lifetime of V2 2- than that of V2 0 is attributed to lattice relaxation around V2 2- . (Read more)
- 152. J. Opt. Soc. Am. B 10, 913 (1993) , “Raman-heterodyne-detected nonlinear susceptibility with an arbitrary radio-frequency field strength”, X. -F. He, P. T. H. Fisk, N. B. MansonRaman-heterodyne-detected complex nonlinear susceptibility has been measured and analyzed in detail with a radio-frequency field strength varying from weak to strong. The experiments were carried out on the nitrogen-vacancy color center in diamond involving both nuclear magnetic resonance and electron paramagnetic resonance transitions. The dispersive and the absorptive components of the nonlinear susceptibility are shown to have different saturation behaviors, and an anomalous-amplitude line shape arises where the dispersion component dominates in the response spectrum at high RF powers. The experimental results are found to be in good agreement with theoretical profiles, where no adjustable parameter is included in the calculation. (Read more)
- 153. J. Opt. Soc. Am. B 9, 768 (1992) , “Origin of persistent hole burning of N-V centers in diamond”, D. Redman, S. Brown, S. C. RandNew satellite features and antiholes in the persistent hole-burning spectrum of N–V centers in diamond, as well as their dependences on applied electric fields and frequency within the inhomogeneous absorption line, are reported. These results, together with reassignments of spin states of this center, permit an understanding of the origin of the satellite holes as well as of possible mechanisms for the persistent hole-burning phenomenon itself. In addition we report narrow optical interference fringes in heterodyne-detected spectra of persistent spectral holes in the N–V defect center in diamond and discuss a recent suggestion for high-resolution Ramsey-fringe hole-burning spectroscopy of solids based on phase-separated fields. (Read more)
- 154. Appl. Phys. A 53, 147 (1991) , “Iron-Aluminum Pairs in Silicon”, S. Greulich-Weber, A. Grger, J. M. Spaeth, H. Overhof.Iron-aluminum pairs in silicon are investigated with conventional and optically detected electron paramagnetic resonance (EPR). For the trigonal and orthorhombic pairs known from previous EPR measurements we found for the first time optical absorption bands by measuring their magnetic circular dichroism of the absorption (MCDA). Direct experimental evidence is presented for the configurational bistability of both pairs by showing that the MCDA of the trigonal configuration can be transformed into that of the orthorhombic configuration by the combined effect of light and temperature. A new trigonal pair was discovered by conventional EPR having the same EPR intensity as the known one. Total energy calculations of various (Fei-Als) pair configurations show that two trigonal (Fei-Als)0 pairs with different Fei-Als separations have almost the same binding energy and should occur with the same probability. Fei + is always on a tetrahedral interstitial site, while Als - is nearest neighbor along <111> in one pair, second nearest neighbor in the other one with one silicon lattice site in between. (Read more)
- 155. J. Catalysis 5, 314-324 (1966) , “ESR investigation of gas-solid interactions* The oxygen-zinc oxide system”, K.M. SancierESR measurements were combined with determinations of the amount of oxygen adsorbed or desorbed on ZnO in order to investigate the relationship between the solid state electronic properties of a semiconductor catalyst and the amounts and the nature of the adsorbed oxygen species. (Read more)
- 156. Opt. Lett. 15, 1094 (1990) , “Raman heterodyne detected electron-nuclear-double-resonance measurements of the nitrogen-vacancy center in diamond”, N. B. Manson, X. -F. He, P. T. H. FiskWe report two new applications of the Raman heterodyne detection technique. Raman heterodyne detected electron-nuclear double resonance and a double rf resonance technique are used to obtain the hyperfine structure of the nitrogen-vacancy center in diamond. (Read more)
- 157. Opt. Lett. 15, 983 (1990) , “Raman heterodyne detection of electron paramagnetic resonance”, K. Holliday, X. -F. He, P. T. H. Fisk, N. B. MansonWe report the detection of an electron paramagnetic resonance signal using Raman heterodyne spectroscopy, a rf –optical double-resonance technique. The signals are associated with the nitrogen-vacancy center in diamond, which has a spin-triplet ground state. A three-line spectrum associated with the nitrogen hyperfine structure is observed for various magnetic field strengths and crystal orientations. (Read more)
- 158. J. Electrochem. Soc. 137, 3642 (1990) , “Effects of Heat-Treatments on Electrical Properties of Boron-Doped Silicon Crystals”, Y. Kamiura, F. Hashimoto, and M. YonetaThe effects of heat-treatments around 1000ºC and subsequent annealing on the electrical properties of boron-dopedsilicon have been studied by electrical conductivity, Hall effect, and deep-level transient spectroscopy measurements. Thehigh-temperature heat-treatments always induced net densities of donors. Four recovery stages, stages I–IV, of heat-treatment-induceddonors were observed on isochronal annealing up to 400°C. Conductivity changes in these stages can be explainedas described below by the reactions of interstitial iron (Fei), its pair (FeiBs) with substitutional boron (Bs), and twounknown donors (D1, D2). That is, stage I (25º–100ºC) D1 → sink and Fei + Bs → FeiBs, stage II (100º–150ºC):FeiBs → Fei + Bs, stage III (200º–250ºC): D2 → sink, stage IV (250º–350ºC): Fei → precipitation. Heat-treatments in an oxygenatmosphere greatly reduced the introduction of Fei and FeiBs in comparison with an argon atmosphere and mainly introducedD1 and D2 donors. The density of D2 was dependent on the heat-treatment temperature, while that of D1 showed almostno dependence. In stage I, D1 was annihilated by first-order kinetics with an activation energy of 0.8 eV. It was indicatedthat D1 and D2 have no relations to iron, copper, oxygen, nor carbon. Though their origins are still unidentified, theremay be some interstitial impurities. In stage IV, Fei is suggested to precipitate at oxygen precipitates and dislocation loopsformed by high-temperature heat-treatments. As to the application to iron gettering in the device fabrication process, it isproposed that annealing around 300ºC is most suitable as the final heat-treatment step to remove iron and related defectsfrom active regions of devices. (Read more)
- 159. Hyperfine Interactions 64, 535 (1990) , “Temperature dependence of muon-decay positron channeling in semiconductors ”, Simmler H.1 Eschle P.1 Keller H.1 Kndig W.1 Odermatt W.1 Patterson B. D.1 Pmpin B.1 Savi? I. M.1 Schneider J. W.1 Straumann U.1 and Trul P.1Planar channeling data ofμ +-decay positrons in various semiconductors are reported. Together with the extensive spectroscopic data supplied by transverse μSR, the location of the different states of the hydrogen pseudo-isotopeμ+ e- (muonium) can be identified by means of planar simulations. In high purity silicon as well as in gallium arsenide a thermally activated site transition is observed which can be assigned to a transition between different muonium states. (Read more)
- 160. Hyperfine Interactions 64, 561 (1990) , “Final states in Si and GaAs via RF ?SR spectroscopy ”, Kreitzman S. R.1 Pfiz T.1 Sun-Mack S.2 Riseman T. M.1 Brewer J. H.1 Williams D. Ll.1 and Estle T. L.3The ionization of muonium centers in Si and GaAs have been studied using radio frequency (RF) resonant techniques. In Si all three muonic centers are detectable by RF. No evidence was found for delayed Mu and Mu* states at any temperature. However, our results on the diamagnetic final state (μ f+) show that it is composed of prompt fractions (as seen by conventional μSR) and delayed fractions arising from the ionization of Mu* and Mu. We observe a full μ f+ fraction at 317 K when the Mu relaxation rate is above 10 μs-1. GaAs differs from the situation in Si in that we observed only a partial conversion of Mu* and Mu to a μ+ final state up to 310 K in spite of the fact that the transverse field relaxation rates become very high at 150 and 250 K respectively (Read more)
- 161. Appl. Phys. A 49, 123 (1989) , “Thermal double donors in silicon ”, P. Wagner and J. HageA family of double donors with only slightly differing binding energies can be generated in silicon containing oxygen. In the 30 years since they were discovered the microscopic structure of these defects has not been unravelled in spite of being investigated with all the tools of solid state physics. (Read more)
- 162. J. Electrochem. Soc. 132, 1707 (1985) , “Determination of Conversion Factor for Infrared Measurement of Oxygen in Silicon”, T. Iizuka, S. Takasu, M. Tajima, T. Arai, T. Nozaki, N. Inoue, and M. WatanabeA reliable conversion factor for the infrared absorptiometry of oxygen in silicon has been determined by round-robininfrared measurement followed by charged particle activation analysis with the 16O(3He,p)18F reaction. As for theround-robin samples, 70 dislocation-free CZ silicon wafers with oxygen contents ranging from 3 to 20 × 1017 at.-cm-3 andthicknesses of 2, 1, and 0.5 mm were carefully prepared by five organizations. A good linear relationship has been obtainedbetween the absorption coefficient and the oxygen content. The relationship is expressed as [oxygen concentration (at.-cm-3)] = (3.03 ± 0.02) × 1017 × [absorption coefficient (cm-1)]. (Read more)
- 163. J. Electrochem. Soc. 129, 2292 (1982) , “Effect of Back-Side Oxidation on B and P Diffusion in Si Directly Masked with Si3N4 Films”, Shoichi Mizuo and Hisayuki HiguchiIt is found that the diffusion of B and P in the front surface of float zone Si wafers is enhanced by oxidation of the back-surfaceof the wafers. The range of diffusion enhancement at 1100°C is found to be much larger than previously reportedvalues; the range increases with oxidation time and the range for B agrees well with that for P. Moreover, the results areconsistent with the findings that B and P diffuse only by interstitials and that the range of oxidation-enhanced diffusion isdetermined by the diffusion of interstitials. (Read more)
- 164. phys. stat. sol. (b) 119, K117 (1983) , “Gold-related EPR centres of low symmetry in silicon”, M. Höhne.The most important gold-related centre in silicon works incognito: It produces levels which are well known /1/. The acceptor level EC-0.55 eV and the donor level EV+0.35 eV are caused by different states of the same defect, as was als orecentlr affirmed /2, 3/. This defect is... (Read more)
- 165. J. Electrochem. Soc. 130, 1942 (1983) , “Effects of Back-Side Oxidation of Si Substrates on Sb Diffusion at Front Side”, S. Mizuo and H. HiguchiThe effect of back-side oxidation of Si wafers on the diffusion of Sb in the front of wafers is investigated with back-side selective oxidation (BSO) at 1100ºC in dry O2 ambients. It is found that the diffusion of Sb in the front of the wafers is retarded by BSO only for FZ Si substrates under directly formed Si3N4 films, and that Sb diffusion in CZ Si substrates and under double-layered SiO2-Si3N2\4 films in both FZ and CZ substates is not affected by BSO. The effective range over which BSO affects Sb diffusion is found to increase with oxidation time. The range and extent of oxidation retarted diffusion (ORD) for Sb are shown to agree with those of oxidation enhanced diffusion (OED) for B and P. These results are explained with a proposed model:(i) there is a thermal equilibrium between vacancies and interstitials, and(ii) the Si-SiO2 interface provides sinks and generation centers for point defects in Si, though the Si-Si3N4 interface does not react with point defects. (Read more)
- 166. phys. stat. sol. (b) 104, K79 (1981) , “Changes in the EPR of Gold in Silicon Induced by Light”, M. Höhne, A. A. Lebedev.Since a long time gold is known as a dopant in silicon, which strongly affects recombination processes /1/ and which produces an acceptor level 0.55 eV below the conduction band (CB) and a donor level 0.33 eV above the valence band (VB) /2/. Electric and photoelectric properties were thoroughly... (Read more)
- 167. Phys. Rev. B 17, 4130 (1978) , “Erratum: EPR of a Jahn-Teller Distorted <111> Carbon Interstitialcy in Irradiated Silicon [Phys. Rev. B 9, 2607 (1974)]”, K. L. Brower.Due to a computational error, the numbers in table Ⅲ are incorrect: the corrected Table Ⅲ is listed below: (Read more)
- 168. phys. stat. sol. (a) 22, K55 (1974) , “EPR of Conduction Electrons Produced in Silicon by Hydrogen Ion Implantation”, Yu. V. Gorelkinskii, V. O. Sigle, Zh. S. Takibaev.It has been observed using electrical measurements that proton bombardment at room temperature followed by annealing at about 300ºC produced shallow donors in silicon with a donor ionization energy of 26 meV (1,2). This note reports first EPR measurements on conduction electrons produced in Si by... (Read more)
- 169. Solid State Commun. 9, 1695 (1971) , “Mssbauer effect and lattice parameter for silicon doped with antimony*1 ”, J. R. Teague, C. M. Yagnik, G. J. Long and Robert Gerson and L. D. LafleurSingle crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations~1017/cm3, irradiated with 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presence of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li―one in O-containing material and one in O-free material. The defects are observedin their electron-filleed state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiation at 40ºK followed by annealing at higher temperature show that both EPR defects described above begin to form at about 200ºK and begin to decrease at about 275ºK―just as does the 250ºK reverse annealing observed generally for n-type Si. Based on these data, and the workof others, it is suggested that both defects form as a result of the motion of Si interstitials which produce a (Li-O-interstitial) conplex in O-containing Si, and a (Li-interstitial) complex in O-free Si. (Read more)
- 170. J. Appl. Phys. 40, 3879 (1969) , “Three New Electron Spin Resonance Centers in Electron-Irradiated Silicon”, H. Horiye and E. G. WiknerElectron spin resonance (ESR) has been effectively used to study irradiation effects in silicon crystals. A good review paper on this subject is that of Watkins in which he lists 27 centers observed in irradiatedsilicon. The present paper describes three more centers which have not previously been... (Read more)
- 171. Jpn. J. Appl. Phys. 5, 333 (1966) , “Electron Spin Resonance in SiO2 Grown on Silicon”, Y. NishiRecently there has been much interest in the behavior of space charge in SiO2 on silicon. Based on the generation and motion of charged species,structural models have been proposed by Seraphimet al. and by Revesz. In the present study electron spin resonance absorption has been... (Read more)
- 172. Phys. Rev. Lett. 17, 428 (1966) , “Direct Observation of Lithium-Defect Interaction in Silicon by Electron Paramagnetic Resonance Measurements”, Bernard GoldsteinElectron paramagnetic resonance measurements have been used to observe directly the interaction of lithium with damage centers produced by electron irrsadiation in n-type, floatzone silicon. The silicon is characterized by low oxygen concentrations, with lithium as the predominant... (Read more)
- 173. Phys. Rev. Lett. 16, 890 (1966) , “Method for Determining Silicon Diffusion Coefficients in Silicon and in Some Silicon Compounds ”, R. N. GhoshtagoreSelf-diffusion data in silicon are of considerable interest for a fuller understanding of diffusion mechanism operating in group-IV semiconductors. But due to the unavailability of any suitable experimental tehnique no direct measurement has been possible so far. Different authors have predicted... (Read more)
- 174. Phys. Rev. Lett. 7, 240 (1961) , “Splitting of Electron Spin Resonance Lines by an Applied Electric Field”, G. W. Ludwig and H. H. WoodburyNuclei or paramagnetic irons in many solids occupy sites which lack inversion symmetry. Bloembergen has recently called attention to the possibility of observing shifts, proportional to the applied electric field ε, in the energy levels of such systems. Consistent with Bloembergen's ideas,Kushida... (Read more)
- 175. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 176. Phys. Rev. Lett. 5, 309 (1960) , “Paramagnetic Resonance Absorption from Acceptors in Silicon”, G. Feher, J. C. Hensel, and E. A. GereIn the past,several attempts to observe the paramagnetic absorption from acceptors in silicon were unsuccessful.The reasons for this failure were pointed out by Kohn and are associated with the degeneracy of the valence band in silicon.We wish to report in this Letter the observation of the... (Read more)
- 177. Phys. Rev. Lett. 5, 425 (1960) , “Resonant Spin-Spin Interaction between Donors and Acceptors in Silicon”, R. A. Levy.A reduction of the direct relaxation time of donor electrons in silicon,belived to be due to a resonant spin-spin interaction with a background acceptor resonance line,has been observed in compensated silicon containing approximately 5×1015 phosphorus donor/cm3 and... (Read more)
- 178. Phys. Rev. Lett. 5, 96 (1960) , “Vacancy Interactions in Silicon”, H. H. Woodbury and G. W. LudwigThe production and properties of vacancies in silicon are subjects upon which much empirical work has been done.For the most part the interpretation of the data in terms of detailed models has been inconclusive.Recently the interaction of radiation-induced defects(suggested to be vacancies)with... (Read more)
- 179. J. Phys. Chem. Solids 8, 490 (1959) , “Spin resonance of deep level impurities in germanium and silicon”, G. W. Ludwig, H. H. Woodbury and R. O. CarlsonElectron spin resonance measurements have been reported for nickel and manganesein germanium.We have been studying several deep level impurities in germanium and silicon be resonance tecniques,but only two system,nickel in germanium and manganese in silicon,will be discussed here. (Read more)
- 180. J. Appl. Phys. 29, 736-737 (1958) , “Silicon Crystals Free of Dislocations”, William C. DashEtching and copper decoration techniques have shown that silicon crystals grown from quartz crucibles under proper conditions contain no detectable dislocations.However,oxygen in concentration up to about 1018 per cm3incorporated from the quartz crucible might conceivably... (Read more)
- 181. Phys. Rev. Lett. 1, 295 (1958) , “Spin of Fe57”, G. W. Ludwig, H. H. Woodbury, R. O. Carlson.The spin of the stable isotope Fe57 has been directly observed to be 1/2 from the electron spin resonance spectrum of iron-doped silicon.Samples were prepared by alloying several milligrams of ironenriched to contain 84.1% Fe57 onto silicon crystals 3mm×3mm×10mm.The iron was... (Read more)
- 182. Phys. Rev. 109, 221 (1958) , “Spontaneous Emission of Radiation from an Electron Spin System”, G. Feher, J. P. Gordon, E. Buehler, E. A. Gere, and C. D. ThurmondIt was pointed out by Combrission,Honig,and Townes that under certain conditions energy which has been stored in a spin system may be spontaneously and coherently radiated into a resonant cavity at the Larmor precession frequency of the spins.In this note we wish to report the direct observation of... (Read more)
- 183. Phys. Rev. 107, 1462 (1957) , “Spin and Magnetic Moment of P32 by the Electron Nuclear Double-Resonance Technique”, G. Feher, C. S. Fuller, E. A. Gere.The spin and magnetic moment of 14-day P32 with dtermined by the electron unclear double resonance (ENDOR) technique.The P32 obtained from Oak Ridge was diffused into high-resistivity silicon plates having a total volume of 0.25 cm3. (Read more)
- 184. Phys. Rev. 103, 501 (1956) , “Polarization of Phosphorus Nuclei in Silicon”, G. Feher and E. A. GereIn the preceding Letter a scheme for polarizing unclei was described.This letter deals with the experimental verificationof the scheme. (Read more)
- 185. Phys. Rev. 103, 834 (1956) , “Observation of Nuclear Magnetic Resonances via the Electron Spin Resonance Line”, G. Feher.The double-frequency resonance method reported recently in connection with a unclear polarization schemehas been extended to observe unclear transitions and thereby determine hyperfine interactions and unclear g values. (Read more)
- 186. Phys. Rev. 95, 1686 (1954) , “Electron Spin Resonance of an Impurity Level in Silicon”, A. Honig and A. F. KipThe saturation of the microwave transition J=0→1 of CH3Sl35 has been measured by the method of Baird and Bird1.The resulte constitute the first measurement on saturation of a rotational absorption line,all other microwave saturation measurements having been... (Read more)
- 187. Phys. Rev. 94, 1392 (1954) , “Spin Resonance of Donors in Silicon”, R. C. Fletcher, W. A. Yager, G. L. Pearson, A. N. Holden, W. T. Read, and F. R. MerrittResonance absorption belived associated with the spin of electrons bound to Group V donor atoms has been observed in several different examples of silicon.The absorption was measured on a Zeeman modulation spectrometer operating at a frequancy of 24000 Mc/sec.The samples were cut from single... (Read more)
- 188. Phys. Rev. 90, 988 (1953) , “Electron Spin Resonance in a Silicon Semiconductor”, A. M. Portis, A. F. Kip, C. Kittel, W. H. Brattain.We hava observed electron spin resonance absorption in the 9000Mc/sec range in a powdered n type silicon semiconductor specimen at temperatures between 4ºK and 300ºK.We belive this is the first occasion that electron spin resonance has been reported for a semiconductor.The preliminary... (Read more)
- 189. Appl. Phys. Express 2, 091101 (2009) , “Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment”, Toru Hiyoshi and Tsunenobu KimotoBy thermal oxidation of 4H-SiC at 1150–1300 °C, the Z1/2 and EH6/7 concentrations can be reduced to below 1×1011 cm-3. By the oxidation, however, a high concentration of HK0 center (EV + 0.78 eV) is generated.... (Read more)
- 190. Jpn. J. Appl. Phys. 48, 081003 (2009) , “Effects of Phosphorus Implantation on the Activation of Magnesium Doped in GaN”, Kuan-Ting Liu, Shoou-Jinn Chang, and Sean WuThe effects of phosphorus implantation on the activation of magnesium doped in GaN at different dopant concentration ratios have been systematically investigated. Hall effect measurements show that P implantation improves the hole concentration, and that this improvement is dependent on P/Mg dopant... (Read more)
- 191. J. Appl. Phys. 104, 014106 (2008) , “Analysis of electrically biased paramagnetic defect centers in HfO2 and HfxSi1−xO2 / (100)Si interfaces”, P. T. Chen, B. B. Triplett, J. J. Chambers, L. Colombo, P. C. McIntyre, and Y. NishiThis study reports on the first experimental observations of electrically biased paramagnetic defects at 800 °C N2 annealed HfxSi1−xO2 (x=0.4, and 0.6)/(100)Si and HfO2/(100)Si interfaces in metal oxide silicon... (Read more)
- 192. Appl. Phys. A 30, 1 (1983) , “Transition Metals in Silicon”, E. R. Weber.A review is given on the diffusion, solubility and electrical activity of 3d transition metals in silicon. Transition elements (especially, Cr, Mn, Fe, Co, Ni, and Cu) diffuse interstitially and stay in the interstitial site in thermal equilibrium at the diffusion temperature. The parameters of the liquidus curves are identical for the Si:Ti — Si:Ni melts, indicating comparable silicon-metal interaction for all these elements. Only Cr, Mn, and Fe could be identified in undisturbed interstitial sites after quenching, the others precipitated or formed complexes. The 3d elements can be divided into two groups according to the respective enthalpy of formation of the solid solution. The distinction can arise from different charge states of these impurities at the diffusion temperature. For the interstitial 3d atoms remaining after quenching, reliable energy levels are established from the literature and compared with recent calculations. (Read more)
- 193. Phys. Rev. B 37, 7268 (1988) , “Electron-nuclear double resonance of titanium in silicon: 47Ti and 49Ti ENDOR”, D. A. van Wezep, C. A. J. AmmerlaanThe electron-nuclear double-resonance spectra of interstitial 47Ti+ and 49Ti+ in silicon have been measured at 4.2 K. Spin Hamiltonians for these systems were determined and had to include hyperfine contributions of the type S3I and... (Read more)
- 194. Phys. Rev. B 32, 7129 (1985) , “Electron-Nuclear Double Resonance of Titanium in Silicon: 29Si ENDOR”, D. A. van Wezep, R. van Kemp, E. G. Sieverts, C. A. J. Ammerlaan.The Si-NL29 EPR spectrum, which is associated with the positive charge state of interstitial titanium in silicon, was investigated by electron-nuclear double resonance. Hyperfine-interaction parameters of 17 shells of silicon neighbors, comprised of 214 atoms, could be determined. These parameters... (Read more)
- 195. Appl. Phys. Express 2, 041101 (2009) , “Reduction of Deep Levels and Improvement of Carrier Lifetime in n-Type 4H-SiC by Thermal Oxidation”, Toru Hiyoshi and Tsunenobu KimotoSignificant reduction of major deep levels in n-type 4H-SiC(0001) epilayers by means of thermal oxidation is demonstrated. By thermal oxidation of epilayers at 1150–1300 °C, the concentration of the Z1/2 and EH6/7 centers has been reduced from... (Read more)
- 196. Jpn. J. Appl. Phys. 48, 031205 (2009) , “Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide”, Kazuhiro Mochizuki, Haruka Shimizu, and Natsuki YokoyamaReported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a “dual-sublattice” modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a... (Read more)
- 197. J. Appl. Phys. 105, 053709 (2009) , “Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence”, Yunlong Cui, David D. Caudel, Pijush Bhattacharya, Arnold Burger, Krishna C. Mandal, D. Johnstone, and S. A. PayneDeep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy (DLTS). Three... (Read more)
- 198. Appl. Phys. Lett. 94, 092105 (2009) , “Interaction of oxygen with thermally induced vacancies in Czochralski silicon”, V. Akhmetov, G. Kissinger, and W. von AmmonComplexes consisting of a vacancy and four oxygen atoms, VO4, were found in oxygen-rich Czochralski silicon wafers subjected to rapid thermal annealing (RTA) at 1250 °C for 30 s in Ar/O2 atmosphere by means of Fourier transform infrared spectroscopy with enhanced... (Read more)
- 199. Appl. Phys. Lett. 94, 091903 (2009) , “Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys”, M. L. Nakarmi, N. Nepal, J. Y. Lin, and H. X. JiangDeep ultraviolet photoluminescence spectroscopy was employed to study the impurity transitions in Mg-doped AlGaN alloys. A group of deep level impurity transitions was observed in Mg-doped AlxGa1−xN alloys, which was identified to have the same origin as the... (Read more)
- 200. Phys. Rev. B 79, 075203 (2009) , “Hyperfine interaction in the ground state of the negatively charged nitrogen vacancy center in diamond”, S. Felton, A. M. Edmonds, and M. E. NewtonThe 14N, 15N, and 13C hyperfine interactions in the ground state of the negatively charged nitrogen vacancy (NV−) center have been investigated using electron-paramagnetic-resonance spectroscopy. The previously published parameters for the... (Read more)
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Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)