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- 91. Appl. Phys. Lett. 90, 072905 (2007) , “Imaging deep trap distributions by low vacuum scanning electron microscopy”, Milos Toth, W. Ralph Knowles, and Matthew R. PhillipsThe distribution of deep traps in a bulk dielectric (Al2O3) is imaged by low vacuum scanning electron microscopy (LVSEM). The image contrast corresponds to spatial variations in radiation-induced, field-enhanced conductivity. A methodology is presented for identification of... (Read more)
- 92. Appl. Phys. Lett. 90, 072502 (2007) , “Effect of oxygen vacancies on spin-dependent tunneling in Fe/MgO/Fe magnetic tunnel junctions”, J. P. Velev, K. D. Belashchenko, S. S. Jaswal, and E. Y. TsymbalFirst-principles calculations based on density functional theory are used to elucidate the effect of O vacancies, forming F centers, on spin-dependent tunneling in Fe/MgO/Fe(001) magnetic tunnel junctions. O vacancies produce occupied localized s states and unoccupied resonant p... (Read more)
- 93. Appl. Phys. Lett. 90, 072107 (2007) , “Deuterium passivation of electrically active defects in nonintentionally doped n-GaN”, J. Mimila-Arroyo, M. Barbé, F. Jomard, J. Chevallier, M. A. di Forte-Poisson, S. L. Delage, and C. Dua.Deuterium diffusion was achieved in nonintentionally doped n-GaN layers, grown by metal organic chemical vapor deposition, at 460 °C and a power density of 1.0 W cm−2. A deuterium diffusion mechanism was observed yielding concentrations around 1018 ... (Read more)
- 94. Appl. Phys. Lett. 90, 063103 (2007) , “Origin of the red luminescence band in photoluminescence spectra of ZnSe nanowires”, U. Philipose, S. Yang, T. Xu, and Harry E. RudaIn this work, the origin of the deep level, defect related photoluminescence emission band in ZnSe is investigated. Using the dependence of the peak energy on excitation intensity, it was shown to originate from donor-acceptor pair recombination. The binding energy of the donor-acceptor pair was... (Read more)
- 95. Appl. Phys. Lett. 90, 062116 (2007) , “Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation”, Liutauras Storasta and Hidekazu TsuchidaThe authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 °C or higher temperature. Reduction of... (Read more)
- 96. Appl. Phys. Lett. 90, 062113 (2007) , “Influence of growth conditions on irradiation induced defects in low doped 4H-SiC epitaxial layers”, I. Pintilie, U. Grossner, B. G. Svensson, K. Irmscher, and B. ThomasNitrogen doped 4H-SiC epitaxial layers were investigated by deep level transient spectroscopy after irradiation with 6 MeV electrons. The influence of C/Si ratio, N doping level, and growth rate on the behavior of the prominent Z1,2 and EH6,7 levels during... (Read more)
- 97. Appl. Phys. Lett. 90, 052901 (2007) , “Process-dependent defects in Si/HfO2/Mo gate oxide heterostructures”, S. Walsh, L. Fang, J. K. Schaeffer, E. Weisbrod, and L. J. BrillsonThe authors have used low energy electron-excited nanoscale-depth-resolved spectroscopy to probe the bulk and interface defect states of ultrathin Mo/HfO2/Si with conventional process sequences. Multiple deep level emissions are evident below the 5.9 eV HfO2 near band edge,... (Read more)
- 98. Appl. Phys. Lett. 90, 051902 (2007) , “Recombination processes in undoped and rare-earth doped MAl2O4 (M=Ca,Sr) persistent phosphors investigated by optically detected magnetic resonance”, Stefan Schweizer, Bastian Henke, Uldis Rogulis, and William M. YenThe authors present magneto-optical measurements on single-crystal MAl2O4 (M=Ca and Sr) persistent phosphors that are nominally pure or doped with Eu and Nd or Dy, respectively. Their recombination luminescence (RL) and microwave-induced changes in the RL in a... (Read more)
- 99. Appl. Phys. Lett. 90, 042105 (2007) , “Stress induced leakage current mechanism in thin Hf-silicate layers”, A. Paskaleva, M. Lemberger, and A. J. BauerStress induced leakage current (SILC) in thin Hf-silicate layers and the mechanisms of its creation are examined. A very strong polarity and thickness dependence as well as partial recovery of SILC are observed. It is suggested that the trapping in preexisting sites influences SILC by two ways: (1)... (Read more)
- 100. Appl. Phys. Lett. 90, 041910 (2007) , “Evolution of W optical center in Si-implanted epitaxial SiGe at low temperature annealing”, J. Tan, G. Davies, S. Hayama, and A. Nylandsted LarsenThe authors have investigated the effect of Ge concentration on the evolution of W optical center (W center) in Si-implanted epitaxial Si1−xGex at low temperature annealing. From the results of photoluminescence, the annealing behavior of... (Read more)
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