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- 81. Appl. Phys. Lett. 90, 152103 (2007) , “Ab initio studies of arsenic and boron related defects in silicon mesa diodes”, C. Janke, R. Jones, S. Öberg, and P. R. BriddonE centers are known to diffuse around 400 K in Si and may then form larger donor-vacancy defects such as As2V in heavily doped n-type Si doped with As or AsBV if they diffuse into p-type regions. Ab initio methods are used to explore these possibilities. The... (Read more)
- 82. Appl. Phys. Lett. 90, 142116 (2007) , “Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance”, K. Clémer, A. Stesmans, and V. V. Afanas'evElectron spin resonance analysis has detected a P-donor related point defect in nanometer-thick HfO2 films on (100)Si after annealing in the range of 500–900 °C. Based on the principal g matrix (axial; g=1.9965; g=1.9975) and hyperfine... (Read more)
- 83. Appl. Phys. Lett. 90, 123502 (2007) , “Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination”,The authors combine metal oxide semiconductor (MOS) gated diode measurements and very sensitive electrically detected electron spin resonance measurements to detect and identify negative bias temperature instability (NBTI) generated defect centers in fully processed HfO2 pMOS field effect... (Read more)
- 84. Appl. Phys. Lett. 90, 123501 (2007) , “Deep level defects which limit current gain in 4H SiC bipolar junction transistors”, C. J. Cochrane, P. M. Lenahan, and A. J. LelisThe authors employ a very sensitive electrically detected electron spin resonance technique called spin dependent recombination to observe recombination centers in fully processed 4H SiC n-p-n bipolar junction transistors. Their measurements indicate that the observed... (Read more)
- 85. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more)
- 86. Appl. Phys. Lett. 90, 122103 (2007) , American Institute of Physics , “Pressure-tuned colossal improvement of thermoelectric efficiency of PbTe”, Sergey V. Ovsyannikov and Vladimir V. ShchennikovThe variations in thermoelectric (TE) efficiencies æ of lead chalcogenide compounds (p-PbTe, n-PbTe, p-Pb0.55Te0.45, p-Pb1−xSnxTe1−y, p-PbSe, and p-PbS) at room... (Read more).inp files: PbTe | last update: Sergey V. Ovsyannikov
- 87. Appl. Phys. Lett. 90, 122101 (2007) , “Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact”, Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurišić, L. W. Lu, G. Brauer, and H. C. OngConversion of the Au/n-ZnO contact from Ohmic to rectifying with H2O2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy.... (Read more)
- 88. Appl. Phys. Lett. 90, 112110 (2007) , “Alpha-particle irradiation-induced defects in n-type germanium”, Vl. Kolkovsky, M. Christian Petersen, and A. Nylandsted LarsenDeep level transient spectroscopy and high-resolution Laplace deep level transient spectroscopy were used to investigate alpha-particle irradiation-induced defects in n-type Ge. It is proposed that there is no electrically active divacancy level in the upper half of the band gap. A dominant... (Read more)
- 89. Appl. Phys. Lett. 90, 074101 (2007) , “Stacking fault generation during relaxation of silicon germanium on insulator layers obtained by the Ge condensation technique”, B. Vincent, J.-F. Damlencourt, V. Delaye, R. Gassilloud, L. Clavelier, and Y. MorStacking fault generation within silicon germanium on insulator substrates fabricated by the Ge condensation technique has been evidenced by transmission electronic microscopy analyses for high Ge content enrichments (80%). This phenomenon is explained as a typical strain relaxation mechanism... (Read more)
- 90. Appl. Phys. Lett. 90, 073507 (2007) , “Fermi-level pinning at polycrystalline silicon-HfO2 interface as a source of drain and gate current 1/f noise”, P. Magnone, F. Crupi, L. Pantisano, and C. PaceThe impact of a submonolayer of HfO2 sandwiched between the SiON gate dielectric and the polycrystalline silicon layer on the low frequency noise of a n-channel metal oxide semiconductor field effect transistor is investigated. Fermi-level pinning at polycrystalline... (Read more)
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