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- 61. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 62. Phys. Rev. B 77, 081201(R) (2008) , “Electron paramagnetic resonance studies of the neutral nitrogen vacancy in diamond”, S. Felton, A. M. Edmonds, M. E. Newton, P. M. Martineau, D. Fisher, and D. J. TwitchenDespite the numerous experimental and theoretical studies on the negatively charged nitrogen vacancy center (NV−) in diamond and the predictions that the neutral nitrogen vacancy center (NV0) should have an S= ground state, NV0 has not previously been... (Read more)
- 63. Phys. Rev. B 77, 073206 (2008) , “Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon”, J. H. Bleka, I. Pintilie, E. V. Monakhov, B. S. Avset, and B. G. SvenssonIn hydrogenated high-purity Si, the vacancy-oxygen (VO) center is shown to anneal already at temperatures below 200 °C and is replaced by a center, identified as a vacancy-oxygen-hydrogen complex, with an energy level 0.37 eV below the conduction-band edge and a rather low thermal... (Read more)
- 64. Phys. Rev. B 77, 045204 (2008) , “Vacancy clustering and acceptor activation in nitrogen-implanted ZnO”, Thomas Moe Børseth, Filip Tuomisto, Jens S. Christensen, Edouard V. Monakhov, Bengt G. Svensson, and Andrej Yu. KuznetsovThe role of vacancy clustering and acceptor activation on resistivity evolution in N ion-implanted n-type hydrothermally grown bulk ZnO has been investigated by positron annihilation spectroscopy, resistivity measurements, and chemical profiling. Room temperature 220 keV N implantation using... (Read more)
- 65. Phys. Rev. B 77, 035201 (2008) , “Native defect properties and p-type doping efficiency in group-IIA doped wurtzite AlN”, Yong Zhang, Wen Liu and Hanben NiuUsing the first-principles full-potential linearized augmented plane-wave (FPLAPW) method based on density functional theory (DFT), we have investigated the native defect properties and p-type doping efficiency in AlN doped with group-IIA elements such as Be, Mg, and Ca. It is shown that... (Read more)
- 66. Phys. Rev. Lett. 101, 247604 (2008) , “Measurement of Cu(II) Copper Defect Dipoles in Ferroelectric PbTiO3 Using Electron-Nuclear Double Resonance”, R. R. Garipov, J.-M. Spaeth, and D. J. KeeblePoint defects associated with Cu(II) in ferroelectric PbTiO3 were determined using pulsed electron-nuclear double resonance (ENDOR). Three centers were observed, and neighbor 207Pb superhyperfine tensors to the third shell of equivalent Pb ions measured. The ENDOR angular... (Read more)
- 67. Phys. Rev. Lett. 101, 177204 (2008) , “Diffusion of Interstitial Mn in the Dilute Magnetic Semiconductor (Ga,Mn)As: The Effect of a Charge State”, V. I. Baykov, P. A. Korzhavyi, and B. JohanssonMigration barriers for diffusion of interstitial Mn in the dilute magnetic semiconductor (Ga,Mn)As are studied using first-principles calculations. The diffusion pathway goes through two types of interstitial sites: As coordinated and Ga coordinated. The energy profile along the path is found to... (Read more)
- 68. Phys. Rev. Lett. 100, 026803 (2008) , “Electronic Transport in Phosphorus-Doped Silicon Nanocrystal Networks”, A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann, and H. WiggersWe have investigated the role of doping and paramagnetic states on the electronic transport of networks assembled from freestanding Si nanocrystals (Si-NCs). Electrically detected magnetic resonance (EDMR) studies on Si-NCs films, which show a strong increase of conductivity with doping of... (Read more)
- 69. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 70. Appl. Phys. Lett. 91, 202111 (2007) , “Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC”, N. T. Son, P. Carlsson, A. Gällström, B. Magnusson, and E. JanzénElectron paramagnetic resonance was used to study semi-insulating (SI) 4H-SiC substrates doped with vanadium (V) in the range of 5.5×1015–1.1×1017 cm−3. Our results show that the electrical activation of V is low and hence only in... (Read more)
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