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- 51. Phys. Rev. B 78, 233201 (2008) , “Gallium interstitial in irradiated germanium: Deep level transient spectroscopy”, Vl. Kolkovsky, M. Christian Petersen, A. Mesli, J. Van Gheluwe, P. Clauws, and A. Nylandsted LarsenTwo electronic levels at 0.34 eV above the valence band and 0.32 eV below the conduction band, in gallium doped, p-type Ge irradiated with 2 MeV electrons have been studied by deep level transient spectroscopy (DLTS) with both majority- and minority-carrier injections, and Laplace DLTS... (Read more)
- 52. Phys. Rev. B 78, 113202 (2008) , “Two FeH pairs in n-type Si and their implications: A theoretical study”, N. Gonzalez Szwacki, M. Sanati, and S. K. EstreicherExperimental evidence for interstitial {FeH} pairs in n-type Si stems from thermally stimulated capacitance (TSCAP). Electron-paramagnetic resonance (EPR) data have also been interpreted in terms of {FeH} pairs. We present theoretical studies of two {FeH} pairs. The properties of the first... (Read more)
- 53. Phys. Rev. B 78, 085214 (2008) , “First-principles study of native defects in CdGeAs2”, Tula R. Paudel and Walter R. L. LambrechtFirst-principles results are presented for various native defects in CdGeAs2 as function of the relevant elements' chemical potentials. The defect formation energies were calculated using fully relaxed 64 atom supercells by means of the full-potential linearized muffin-tin orbital... (Read more)
- 54. Phys. Rev. B 78, 085205 (2008) , “Formation and origin of the dominating electron trap in irradiated p-type silicon”, Lasse Vines, E. V. Monakhov, A. Yu. Kuznetsov, R. Kozowski, P. Kaminski, and B. G. SvenssonDeep level transient spectroscopy and minority-carrier transient spectroscopy (MCTS) have been applied to study electron-irradiated and proton-irradiated p-type Si samples with boron concentrations in the range of 6×1013−2×1015 cm−3.... (Read more)
- 55. Phys. Rev. B 78, 085202 (2008) , “Evolution of vacancy-related defects upon annealing of ion-implanted germanium”, J. Slotte, M. Rummukainen, F. Tuomisto, V. P. Markevich, A. R. Peaker, C. Jeynes, and R. M. GwilliamPositron annihilation spectroscopy was used to study defects created during the ion implantation and annealing of Ge. Ge and Si ions with energies from 600 keV to 2 MeV were implanted at fluences between 1×1012 cm−2 and 4×1014 ... (Read more)
- 56. Phys. Rev. B 78, 035125 (2008) , “Mechanisms of electrical isolation in O+-irradiated ZnO”, A. Zubiaga, F. Tuomisto, V. A. Coleman, H. H. Tan, C. Jagadish, K. Koike, S. Sasa, M. Inoue, and M. YanoWe have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are... (Read more)
- 57. Phys. Rev. B 78, 033202 (2008) , “Divacancy clustering in neutron-irradiated and annealed n-type germanium”, K. Kuitunen, F. Tuomisto, J. Slotte, and I. CapanWe have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation, the Sb-doped samples [(Sb)=1.5×1015 cm−3] were annealed at 473, 673, and 773 K for 30 min. The positron lifetime was measured as a function of temperature... (Read more)
- 58. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 59. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 60. Phys. Rev. B 77, 155214 (2008) , “Optical absorption and electron paramagnetic resonance of the Ealpha[prime]" align="middle"> center in amorphous silicon dioxide”, G. Buscarino, R. Boscaino, S. Agnello, and F. M. GelardiWe report a combined study by optical absorption (OA) and electron paramagnetic resonance (EPR) spectroscopy on the Ealpha[prime]" align="middle"> point defect in amorphous silicon dioxide (a-SiO2). This defect has been studied in β-ray irradiated and... (Read more)
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