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- 1. Phys. Rev. B 75, 075306 (2007) , “Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)”, G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. DamilanoThe optical properties of vertically stacked self-assembled GaN/AlN quantum dots (QD's) grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence (CL). An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD... (Read more)
- 2. Appl. Phys. Lett. 89, 041908 (2006) , “Stress dependence of F+-center cathodoluminescence of sapphire”, Giuseppe Pezzotti, Keshu Wan, Maria Chiara Munisso, and Wenliang ZhuThe rate of spectral shift with applied biaxial stress [piezospectroscopic (PS) coefficient] was determined for the electron-stimulated F+ luminescence emitted from the c plane of sapphire (-Al2O3) as =1.18±0.03 nm/GPa. The PS dependence could be... (Read more)
- 3. J. Appl. Phys. 100, 083515 (2006) , “Stress dependence of the near-band-gap cathodoluminescence spectrum of GaN determined by spatially resolved indentation method”, Alessandro Alan Porporati, Yoshitomo Tanaka, Atsuo Matsutani, Wenliang Zhu, and Giuseppe PezzottiA microscopic procedure has been proposed for evaluating the stress dependence of the (room-temperature) cathodoluminescence (CL) excitonic band emitted from the (0001) crystallographic plane of GaN in a field-emission-gun scanning electron microscope. The room-temperature near-band-gap emission... (Read more)
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Updated at 2010-07-20 16:50:39
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