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- 1. J. Appl. Phys. 102, 013530 (2007) , “Fluorine-vacancy complexes in Si-SiGe-Si structures”, D. A. Abdulmalik, P. G. Coleman, H. A. W. El Mubarek, and P. AshburnFluorine-vacancy (FV) complexes have been directly observed in the Si0.94Ge0.06 layer in a Si-SiGe-Si structure, using variable-energy positron annihilation spectroscopy (VEPAS). These complexes are linked to the significant reduction of boron diffusion in the SiGe layer via... (Read more)
- 2. Phys. Rev. B 75, 075306 (2007) , “Microcrack-induced strain relief in GaN/AlN quantum dots grown on Si(111)”, G. Sarusi, O. Moshe, S. Khatsevich, D. H. Rich, and B. DamilanoThe optical properties of vertically stacked self-assembled GaN/AlN quantum dots (QD's) grown on Si substrates were studied by means of temporally and spatially resolved cathodoluminescence (CL). An analysis of the CL spectra, thermal activation energies, and measured decay times of the QD... (Read more)
- 3. J. Appl. Phys. 100, 043703 (2006) , “Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure”, S. W. Lin, A. M. Song, N. Rigopolis, B. Hamilton, A. R. Peaker, and M. MissousThe effects of postgrowth rapid thermal annealing on the electronic states in a relatively long wavelength (~1.3 µm), self-assembled InAs/GaAs quantum-dot structure are investigated. We combine optical and electrical experiments, i.e., photoluminescence (PL) and deep-level transient... (Read more)
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Updated at 2010-07-20 16:50:39
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