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- 1. Phys. Rev. Lett. 98, 026802 (2007) , “Microscopic Basis for the Mechanism of Carrier Dynamics in an Operating p-n Junction Examined by Using Light-Modulated Scanning Tunneling Spectroscopy”, Shoji Yoshida, Yuya Kanitani, Ryuji Oshima, Yoshitaka Okada, Osamu Takeuchi, and Hidemi ShigekawaThe doping characteristics and carrier transport in a GaAs p-n junction were visualized with a ~10 nm spatial resolution, using light-modulated scanning tunneling spectroscopy. The dynamics of minority carriers under operating conditions, such as recombination, diffusion, and electric... (Read more)
- 2. J. Appl. Phys. 100, 043706 (2006) , “Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC”, W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. BalkasTemperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)
- 3. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 4. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 5. Appl. Phys. Lett. 87, 172108 (2005) , “Production of native donors in ZnO by annealing at high temperature in Zn vapor”, L. E. Halliburton, N. C. Giles, N. Y. Garces, Ming Luo, Chunchuan Xu, Lihai Bai, L. A. BoatnerZinc oxide crystals grown by the seeded chemical vapor transport method have been annealed in zinc vapor at 1100 °C for 30 min. These thermochemical reduction treatments produce a deep red coloration in the crystals and increase their n-type electrical conductivity. Electron paramagnetic... (Read more)
- 6. Phys. Rev. B 71, 193202 (2005) , “EPR and theoretical studies of negatively charged carbon vacancy in 4H-SiC”, T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janzén, N. Morishita, T. Ohshima, H. Itoh, A. GaliCarbon vacancies (VC) are typical intrinsic defects in silicon carbides (SiC) and so far have been observed only in the form of positively charged states in p-type or semi-insulating SiC. Here, we present electron-paramagnetic-resonance (EPR) and photoinduced EPR (photo-EPR)... (Read more)
- 7. Phys. Rev. B 69, 115210 (2004) , “Optical and magnetic properties of Mn in bulk GaN”, A. Wolos, M. Palczewska, M. Zajac, J. Gosk, M. Kaminska, A. Twardowski, M. Bockowski, I. Grzegory, S. PorowskiWe report results of electron paramagnetic resonance, magnetization, and optical absorption studies of bulk GaN crystals doped with Mn and, for some samples, codoped with Mg acceptor. The experiments performed show that the charge state of the Mn ion in GaN depends on the Fermi level position in the... (Read more)
- 8. Phys. Rev. Lett. 92, 175504 (2004) , “Driving Force of Stacking-Fault Formation in SiC p–i–n Diodes”, S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. DasThe driving force of stacking-fault expansion in SiC pin diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)
- 9. Micro. Eng. 66, 59-64 (2003) , “Magnetic resonance studies on ZnO nanocrystals”, H. Zhou, A. Hofstaetter, D. M. Hofmann and B. K. MeyerZnO nanocrystals with diameters ranging from 4 to 50 nm were prepared via a wet chemical method and post-growth annealing treatments. The electron paramagnetic resonance (EPR) spectra of the nanocrystals show the resonance of electron centers with g-value close to that of the shallow donors in bulk... (Read more)
- 10. Phys. Rev. B 67, 165212 (2003) , “Optical selection rules for shallow donors in 4H-SiC and ionization energy of the nitrogen donor at the hexagonal site”, I. G. Ivanov, B. Magnusson, and E. JanzénThe selection rules for transitions between the electronic levels of shallow donors in 4H-SiC in the dipole approximation are derived. The ionization energy of the shallow nitrogen donor (at hexagonal site) is determined to be 61.4±0.5 meV by analyzing the photothermal ionization and... (Read more)
- 11. Physica B 340-342, 15-24 (2003) , “Defects in SiC”, E. Janzén, I. G. Ivanov, N. T. Son, B. Magnusson, Z. Zolnai, A. Henry, J. P. Bergman, L. Storasta, F. CarlssonRecent results from studies of shallow donors, pseudodonors, and deep level defects in SiC are presented. The selection rules for transitions between the electronic levels of shallow donors in 4H–SiC in the dipole approximation are derived and the ionization energy for the N donor at... (Read more)
- 12. Mater. Sci. Eng. 93, 39-48 (2002) , “Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)”, E. R. Glaser, W. E. Carlos, G. C. B. Braga, J. A. Freitas, Jr , W. J. Moore, B. V. Shanabrook, A. E. Wickenden, D. D. Koleske, R. L. Henry, M. W. Bayerl, M. S. Brandt, H. Obloh, P. Kozodoy, S. P. DenBaars, U. K. Mishra, S. Nakamura, E. Haus, J. S. Speck, J. E. Van Nostrand, M. A. Sanchez, E. Calleja, A. J. Ptak, T. H. Myers and R. J. MolnarWe will highlight our recent work on the properties of residual defects and dopants in GaN heteroepitaxial layers and on the nature of recombination from InGaN single quantum well (SQW) light emitting diodes (LEDs) through magnetic resonance techniques. Electron paramagnetic resonance (EPR) and... (Read more)
- 13. Phys. Rev. B 66, 235202 (2002) , “Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S=3/2 and C3v symmetry in n-type 4H-SiC”, N. Mizuochi, S. Yamasaki, H. Takizawa, N. Morishita, T. Ohshima, H. Itoh, J. IsoyaThe TV2a center, which was suggested to be the excited triplet state (S=1) of the neutral silicon vacancy related defect [Sörman et al., Phys. Rev. B 61, 2613 (2000)] in the electron-irradiated n-type 4H-SiC has been studied by continuous wave and pulsed electron paramagnetic resonance... (Read more)
- 14. Phys. Rev. B 64, 245212 (2001) , “Structure of the silicon vacancy in 6H-SiC after annealing identified as the carbon vacancy-carbon antisite pair”, Th. Lingner, S. Greulich-Weber, J.-M. Spaeth, U. Gerstmann, E. Rauls, Z. Hajnal, Th. Frauenheim, H. OverhofWe investigated radiation-induced defects in neutron-irradiated and subsequently annealed 6H-silicon carbide (SiC) with electron paramagnetic resonance (EPR), the magnetic circular dichroism of the absorption (MCDA), and MCDA-detected EPR (MCDA-EPR). In samples annealed beyond the annealing... (Read more)
- 15. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 16. J. Appl. Phys. 87, 3800 (2000) , “Photothermal ionization spectroscopy of shallow nitrogen donor states in 4H–SiC”, C. Q. Chen, J. Zeman, F. Engelbrecht, C. Peppermüller, R. Helbig, Z. H. Chen, G. MartinezPhotothermal ionization spectroscopy (PTIS) measurements were carried out on a free-standing, high purity and high quality 4HSiC epitaxial layer at various temperatures. The two step photothermal ionization process is clearly reflected in the temperature dependence of the photoconductivity.... (Read more)
- 17. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 18. phys. stat. sol. (a) 162, 95-151 (1997) , “EPR and ENDOR Investigations of Shallow Impurities in SiC Polytypes”, S. Greulich-WeberInvestigations of nitrogen donors in 6H-, 4H- and 3C-SiC using conventional electron paramagnetic resonance (EPR), electron nuclear double resonance (ENDOR) and optical detection of EPR and ENDOR as well as optical absorption and emission spectroscopy are reviewed and critically discussed. An... (Read more)
- 19. Appl. Phys. Lett. 44, 228-230 (1984) , “Optically induced electron spin resonance and spin-dependent recombination in Si/SiO2”, B. HendersonIn state-of-the-art Si/SiO2 wafers the concentration of paramagnetic interface states (1010 cm2) is almost too low to be detected by electron spin resonance (ESR). This letter describes experiments which show that the ESR signal of singly occupied dangling bond... (Read more)
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