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- 1. J. Appl. Phys. 100, 053516 (2006) , “Damage production in GaAs and GaAsN induced by light and heavy ions”, C. Björkas, K. Nordlund, K. Arstila, J. Keinonen, V. D. S. Dhaka, and M. PessaIon irradiation causes damage in semiconductor crystal structures and affects charge carrier dynamics. We have studied the damage production by high-energy (100 keV10 MeV) H, He, Ne, and Ni ions in GaAs and GaAs90N10 using molecular dynamics computer simulations. We... (Read more)
- 2. J. Appl. Phys. 100, 034503 (2006) , “Deep level defects in proton radiated GaAs grown on metamorphic SiGe/Si substrates”, M. González, C. L. Andre, R. J. Walters, S. R. Messenger, J. H. Warner, J. R. Lorentzen, A. J. Pitera, E. A. Fitzgerald, and S. A. RingelThe effect of 2 MeV proton radiation on the introduction of deep levels in GaAs grown on compositionally graded SiGe/Si substrates was investigated using deep level transient spectroscopy (DLTS). Systematic comparisons were made with identical layers grown on both GaAs and Ge substrates to directly... (Read more)
- 3. Jpn. J. Appl. Phys. 37, 1939-1944 (1999) , “Role of the EL2 Center on the Formation of Metastable Hydrogen-related Defects (M3/M4) in n-GaAs”, T. Shinagawa, T. OkumuraHydrogen-related metastable defects (M3/M4) in n-GaAs were studied in relation to the EL2 center. We found that the M3/M4 defects were observed only in the crystals containing the EL2 center in the as-grown state after exposure to a hydrogen plasma. The EL3 level, which was tentatively assigned as... (Read more)
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Updated at 2010-07-20 16:50:39
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