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- 1. Phys. Rev. B 75, 193201 (2007) , “Compensating point defects in 4He+-irradiated InN”, F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz, and W. J. SchaffWe use positron annihilation spectroscopy to study 2 MeV 4He+-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a... (Read more)
- 2. Appl. Phys. Lett. 89, 152123 (2006) , “Electrical characterization of defects introduced in n-type Ge during indium implantation”, F. D. Auret, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, W. E. Meyer, S. Decoster, V. Matias, and A. VantommeThe authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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1329 | untagged |
Materials
(111 tags)
Others(101 tags)
Technique
(46 tags)
Details
(591 tags)
Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
Defect-type(19 tags)
Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
Symmetry(15 tags)