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- 1. Phys. Rev. Lett. 98, 216803 (2007) , “High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality, and Perspectives”, G. Herranz, M. Basletić, M. Bibes, C. Carrétéro, E. Tafra, E. Jacquet, K. Bouzehouane, C. Deranlot, A. Hamzić, J.-M. Broto, A. Barthélémy, and A. FertWe have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures... (Read more)
- 2. Phys. Rev. B 74, 245216 (2006) , “Influence of excited states of a deep substitutional dopant on majority-carrier concentration in semiconductors”, Hideharu MatsuuraThe density (NA) and energy level (EA) of an acceptor in a p-type wide-band-gap semiconductor (e.g., SiC, GaN, and diamond) are determined by a least-squares fit of the charge neutrality equation to the temperature dependence of the hole... (Read more)
- 3. Phys. Rev. B 74, 245201 (2006) , “Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC”, Antonio Ferreira da Silva, Julien Pernot, Sylvie Contreras, Bo E. Sernelius, Clas Persson, and Jean CamasselThe electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×1015 and 5×1019 cm−3. For the highest doped samples, a good agreement is found between the... (Read more)
- 4. Phys. Rev. Lett. 97, 256603 (2006) , “Spatial Extent of Wave Functions of Gate-Induced Hole Carriers in Pentacene Field-Effect Devices as Investigated by Electron Spin Resonance”, Kazuhiro Marumoto, Shin-ichi Kuroda, Taishi Takenobu,, and Yoshihiro IwasaAn electron spin resonance (ESR) method is applied to a pentacene field-effect device to investigate gate-induced hole carriers in such devices. Clear field-induced ESR signals are observed, demonstrating that all of the field-injected carriers have S=1/2 spins. Anisotropic ESR signals due to... (Read more)
- 5. Phys. Rev. B 48, 15144-15147 (1993) , “Conduction-electron spin resonance in zinc-blende GaN thin films”, M. Fanciulli, T.Lei, T.D.MoustakasWe report electron-spin-resonance measurements on zinc-blende GaN. The observed resonance has an isotropic g value of 1.9533±0.0008 independent of temperature, a Lorentzian line shape, and a linewidth (18 G at 10 K) which depends on temperature. The spin-lattice relaxation time at 10 K was... (Read more)
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