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- 1. Phys. Rev. B 75, 113201 (2007) , “Local structure around Mn atoms in Si crystals implanted with Mn+ studied using x-ray absorption spectroscopy techniques”, A. Wolska, K. Lawniczak-Jablonska, M. Klepka, M. S. Walczak, and A. MisiukThe local order around Mn atoms in the Mn-implanted Si samples, with ferromagnetic properties, has been investigated by use of x-ray-absorption spectroscopy techniques. Analysis of both extended x-ray-absorption fine structure and x-ray absorption near-edge structure spectra clearly indicates that... (Read more)
- 2. Phys. Rev. B 75, 085203 (2007) , “Structural and magnetic properties of Mn-implanted Si”, Shengqiang Zhou, K. Potzger, Gufei Zhang, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, J. Fassbender, and D. GeigerStructural and magnetic properties in Mn-implanted, p-type Si were investigated. High resolution structural analysis techniques such as synchrotron x-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as-implanted samples. Depending on the Mn fluence,... (Read more)
- 3. Appl. Phys. Lett. 88, 224102 (2006) , “Imaging defects in strained-silicon thin films by glancing-incidence x-ray topography”, D. R. Black, J. C. Woicik, M. Erdtmann, T. A. LangdoX-ray topographical images from thin (50 nm) strained-Si films grown on relaxed, planarized crystalline SiGe-on-Si (001) virtual substrates have been imaged by glancing-incidence monochromatic x-ray topography. This extremely asymmetric diffraction geometry, utilizing (311) diffraction planes, can... (Read more)
- 4. J. Appl. Phys. 99, 113507 (2006) , “Grazing incidence small-angle x-ray scattering from defects induced by helium implantation in silicon”, D. Babonneau, M.-F. Beaufort, A. Declémy, J.-F. Barbot, and J.-P. SimonThe formation and growth of defects, including nanocavities and extended interstitial-type defects, created by helium implantation in silicon (50 keV, 7.1015 cm2) in the temperature range of 100550 °C has been investigated by grazing incidence small-angle... (Read more)
- 5. J. Appl. Phys. 99, 103509 (2006) , “X-ray scattering study of hydrogen implantation in silicon”, Nicolas Sousbie, Luciana Capello, Joël Eymery, François Rieutord, and Chrystelle LagaheThe effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A... (Read more)
- 6. J. Appl. Phys. 99, 043509 (2006) , “Influence of metal trapping on the shape of cavities induced by high energy He+ implantation”, R. El Bouayadi, G. Regula, M. Lancin, B. Pichaud, and M. DesvignesIn He implantation induced cavities highly contaminated with metals (Au, Ni, Pt) we found that, when no three-dimensional structure is observed, the shape of the cavities can be strongly modified depending on the nature of the metal and on its trapped quantity. The equilibrium shape of cavities is... (Read more)
- 7. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 8. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
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