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- 1. J. Appl. Phys. 100, 073511 (2006) , “Depth profiling of strain and defects in Si/Si1–xGex/Si heterostructures by micro-Raman imaging”, T. Mitani, S. Nakashima, H. Okumura, and A. OguraWe have reported depth and in-plane profiling of strain, Ge composition, and defects in strained-Si/Si1xGex/Si heterostructures using micro-Raman imaging. Raman profiling in the depth direction was carried out with a depth resolution of ~15 nm using a... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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