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- 1. Phys. Rev. B 74, 035213 (2006) , “Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique”, Takashi Kita and Osamu WadaWe have studied bound exciton states of isoelectronic centers of nitrogen-doped GaAs by photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an atomically controlled way using the (3×3) nitrogen stable surface on GaAs(001), which has succeeded in forming a series of... (Read more)
- 2. Phys. Rev. B 74, 035208 (2006) , “Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN”, D. Karaiskaj, A. Mascarenhas, M. Adamcyk, E. C. Young, and T. TiedjeHigh resolution photoluminescence spectroscopy on heavily doped GaAs:N reveals the existence of excitons bound to a nitrogen cluster. The observed transitions are exceedingly sharp, similar to those observed for excitons bound to nitrogen pairs in high quality GaAs with the narrowest transition... (Read more)
- 3. Phys. Rev. B 73, 205205 (2006) , “Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1–xNx alloys: A microphotoluminescence study”, P. H. Tan, X. D. Luo, Z. Y. Xu, Y. Zhang, A. Mascarenhas, H. P. Xin, C. W. Tu, and W. K. GeUsing microphotoluminescence (µ-PL), in dilute N GaAs1xNx alloys, we observe a PL band far above the bandgap E0 with its peak energy following the so-called E+ transition, but with contribution from perturbed... (Read more)
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Updated at 2010-07-20 16:50:39
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