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- 1. Phys. Rev. B 75, 193201 (2007) , “Compensating point defects in 4He+-irradiated InN”, F. Tuomisto, A. Pelli, K. M. Yu, W. Walukiewicz, and W. J. SchaffWe use positron annihilation spectroscopy to study 2 MeV 4He+-irradiated InN grown by molecular-beam epitaxy and GaN grown by metal-organic chemical-vapor deposition. In GaN, the Ga vacancies act as important compensating centers in the irradiated material, introduced at a... (Read more)
- 2. Phys. Rev. B 75, 045210 (2007) , “Positron trapping kinetics in thermally generated vacancy donor complexes in highly As-doped silicon”, K. Kuitunen, K. Saarinen, and F. TuomistoWe have measured positron lifetime and Doppler broadening in highly As-doped silicon containing thermally generated V-As3 defect complexes (vacancy is surrounded by three arsenic atoms). We observe positron detrapping from the V-As3 defect complex and determine... (Read more)
- 3. Phys. Rev. Lett. 98, 265502 (2007) , “Monovacancy and Interstitial Migration in Ion-Implanted Silicon”, P. G. Coleman and C. P. BurrowsThe migration of monovacancies (V0) and self-interstitials (I) has been observed in ion-implanted low-doped float-zone silicon by variable-energy positron annihilation spectroscopy. V0 and I were created by the in situ implantation of ~20 keV... (Read more)
- 4. Phys. Rev. B 71, 193204 (2005) , “Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6H-SiC”, A. Kawasuso, T. Chiba, T. HiguchiElectron-positron momentum distributions associated with vacancy defects in 6H-SiC after irradiation with 2-MeV electrons and annealing at 1000 °C have been studied using angular correlation of annihilation radiation measurements. It was confirmed that the above vacancy defects have... (Read more)
- 5. Appl. Phys. Lett. 85, 1538 (2004) , “Observation of fluorine-vacancy complexes in silicon”, P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, M. E. LawWe show direct evidence, obtained by positron annihilation spectroscopy, for the complexing of fluorine with vacancies in silicon. Both float zone and Czochralski silicon wafers were implanted with 30 keV fluorine ions to a fluence of 2×1014 ions/cm2, and studied in the... (Read more)
- 6. Phys. Rev. Lett. 90, 155901 (2003) , “Fluorine in Silicon: Diffusion, Trapping, and Precipitation”, X. D. Pi, C. P. Burrows, P. G. ColemanThe effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)
- 7. Phys. Rev. Lett. 89, 185501 (2002) , “Identification of Lattice Vacancies on the Two Sublattices of SiC”, A. A. Rempel, W. Sprengel, K. Blaurock, K. J. Reichle, J. Major, and H.-E. SchaeferThe identification of atomic defects in solids is of pivotal interest for understanding atomistic processes and solid state properties. Here we report on the exemplary identification of vacancies on each of the two sublattices of SiC by making use of (i) electron irradiation, (ii) measurements of... (Read more)
- 8. Appl. Phys. Lett. 79, 3950 (2001) , “Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H–SiC studied by positron annihilation and deep-level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshäuser, H. ItohAnnealing behavior of vacancies and the Z1/2 levels in n-type 4HSiC epilayers after 2 MeV electron irradiation has been studied using positron annihilation and deep-level transient spectroscopy. Isochronal annealing studies indicate that silicon vacancy-related defects... (Read more)
- 9. J. Appl. Phys. 90, 3377 (2001) , “Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy”, A. Kawasuso, F. Redmann, R. Krause-Rehberg, T. Frank, M. Weidner, G. Pensl, P. Sperr, H. ItohThe annealing behavior of defects in n-type 6H SiC epilayers irradiated with 2 MeV electrons have been studied using positron annihilation and deep level transient spectroscopy. Vacancy-type defects are annealed at 500700 °C and 12001400 °C. From the analysis of... (Read more)
- 10. Phys. Rev. B 62, 8016 (2000) , “Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy”, C. C. Ling, C. D. Beling, S. Fungn-type 6H silicon carbide has been studied using positron lifetime spectroscopy with isochronal annealing temperatures of 400, 650, 900, 1200, and 1400 °C. In the as-grown sample, we have identified the VSi vacancy, the VCVSi divacancy, and probably the VC... (Read more)
- 11. Phys. Rev. B 59, 10603 (1999) , “Defect characterization in electron-irradiated 6H-SiC by positron annihilation”, A. Polity, S. Huth, M. LausmannIsochronal annealing investigations in electron-irradiated 6H-SiC were correlated with temperature-dependent measurements of positron lifetime. It turned out that the positron trapping at temperatures up to 300 K was dominated by the trapping in shallow positron traps. These defects were already... (Read more)
- 12. Appl. Phys. A 67, 209 (1998) , “Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance”, A. Kawasuso, H. Itoh, N. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura, S. YoshidaPositron lifetime and electron spin resonance (ESR) measurements were performed for 1-MeV electronirradiated cubic silicon carbide (3C-SiC). From a comparison of the annealing behaviors of positron lifetime and ESR signal, we identified the annihilation of positrons localized at single-negative silicon vacancies. The positron lifetime at silicon vacancies was first determined experimentally to be 188|±|4 ps. This value agrees well with the theoretical positron lifetime for silicon vacancies [G. Brauer et al. Phys. Rev. B 54, 2512 (1996)]. The trapping coefficient of singlenegative silicon vacancies was also derived. (Read more)
- 13. Phys. Rev. B 51, 1928 (1995) , “Carbon and silicon vacancies in electron-irradiated 6H-SiC”, S. Dannefaer, D. Craigen, D. KerrPositron-lifetime and Doppler-broadening spectroscopies were used to investigate vacancies formed by 2.2- and 10-MeV electrons. Carbon vacancies yield a positron lifetime of 160 ps, only 15 ps longer than the bulk lifetime, and the Doppler-broadening S parameter is very close to that for the bulk.... (Read more)
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