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- 1. Phys. Rev. Lett. 98, 185501 (2007) , “Enhanced Ductile Behavior of Tensile-Elongated Individual Double-Walled and Triple-Walled Carbon Nanotubes at High Temperatures”, J. Y. Huang, S. Chen, Z. F. Ren, Z. Wang, K. Kempa, M. J. Naughton, G. Chen, and M. S. DresselhausWe report exceptional ductile behavior in individual double-walled and triple-walled carbon nanotubes at temperatures above 2000 °C, with tensile elongation of 190% and diameter reduction of 90%, during in situ tensile-loading experiments conducted inside a high-resolution transmission... (Read more)
- 2. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 3. J. Appl. Phys. 99, 103507 (2006) , “Nonconservative Ostwald ripening of a dislocation loop layer under inert nitrogen-rich SiO2/Si interfaces”, D. Skarlatos, P. Tsouroutas, V. Em. Vamvakas, and C. TsamisIn this work we perform a systematic study of the dissolution of a dislocation loop layer under the influence of inert SiO2/Si and nitrogen-rich SiO2/Si interfaces. The composition of the dislocation loop layer was just after its formation 10%20% Frank dislocation loops... (Read more)
- 4. J. Appl. Phys. 99, 011101 (2006) , “Degradation of hexagonal silicon-carbide-based bipolar devices”, M. Skowronski and S. HaOnly a few years ago, an account of degradation of silicon carbide high-voltage p-i-n diodes was presented at the European Conference on Silicon Carbide and Related Compounds (Kloster Banz, Germany, 2000). This report was followed by the intense effort of multiple groups... (Read more)
- 5. Phys. Rev. Lett. 92, 175504 (2004) , “Driving Force of Stacking-Fault Formation in SiC p–i–n Diodes”, S. Ha, M. Skowronski, J. J. Sumakeris, M. J. Paisley, M. K. DasThe driving force of stacking-fault expansion in SiC pin diodes was investigated using optical emission microscopy and transmission electron microscopy. The stacking-fault expansion and properties of the partial dislocations were inconsistent with any stress as the... (Read more)
- 6. Appl. Phys. Lett. 80, 2278 (2002) , “Determining the relationship between local lattice strain and slip systems of dislocations around shallow trench isolation by convergent-beam electron diffraction ”, Akio Toda, Nobuyuki Ikarashi, Haruhiko Ono, Kensuke OkonogiWe clarified the generation of process-induced dislocations around a shallow trench isolation (STI) by using convergent-beam electron diffraction. Comparing the resolved shear strain (RSS) of 12 slip systems, we found that at the trench bottom corner the RSS on slip systems (1 1 1)[0 1 1] and... (Read more)
- 7. J. Appl. Phys. 91, 8919-8941 (2002) , “Transient Enhanced Diffusion of Boron in Si”, S. C. Jain, W. Schoenmaker, R. Lindsay, P. A. Stolk, S. Decoutere, M. Willander, H. E. Maes.On annealing a boron implanted Si sample at ~800 °C, boron in the tail of the implanted profile diffuses very fast, faster than the normal thermal diffusion by a factor 100 or more. After annealing for a sufficiently long time, the enhanced diffusion saturates. The enhanced diffusion is... (Read more)
- 8. Physica B 308-310, 13 (2001) , “Misfortune, challenge, and success: defects in processed semiconductor devices ”, H. Cerva, M. Engelhardt, M. Hierlemann, M. Pölzl and T. TheniklProcess-induced defects are still a key issue in semiconductor device production. The increasing miniaturization and number of process steps as well as the introduction of new materials and processes make the understanding of defect generation more complex. In this paper, we describe small defects... (Read more)
- 9. J. Phys. Chem. Solids 31, 1381 (1970) , “The Annealing of the EPR-Signal Produced in Silicon by Plastic Deformation”, F. D. Wohler and H. AlexanderW. SanderIn silicon an EPR signal is produced by plastic deformation. The annealing behavior of this signal has been investigated, and the dislocation density and structure has been studied by the etch pit technique and by electron microscopy. The EPR-signal anneals in one stage with an activation energy of... (Read more)
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