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- 1. J. Appl. Phys. 100, 113519 (2006) , “Void growth during thermal decomposition of silicon oxide layers studied by low-energy electron microscopy”, H. Hibino, M. Uematsu, and Y. WatanabeLow-energy electron microscopy (LEEM) has been used to investigate void growth during thermal decomposition of 1–2-nm-thick silicon oxide on Si substrates. Real-time LEEM observations clarify that the void size (square root of the void area) grows linearly with time. The temperature dependence... (Read more)
- 2. J. Appl. Phys. 100, 034309 (2006) , “Critical size for defects in nanostructured materials”, Jagdish NarayanThis paper addresses some of the fundamental issues and critical advantages in reducing the grain size/feature size to the nanoscale regime. We find that as the grain size or feature size is reduced, there is a critical size below which the defect content can be reduced virtually to zero. This... (Read more)
- 3. J. Appl. Phys. 99, 043509 (2006) , “Influence of metal trapping on the shape of cavities induced by high energy He+ implantation”, R. El Bouayadi, G. Regula, M. Lancin, B. Pichaud, and M. DesvignesIn He implantation induced cavities highly contaminated with metals (Au, Ni, Pt) we found that, when no three-dimensional structure is observed, the shape of the cavities can be strongly modified depending on the nature of the metal and on its trapped quantity. The equilibrium shape of cavities is... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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