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- 1. Appl. Phys. Lett. 89, 142909 (2006) , “Fluorine passivation in poly-Si/TaN/HfO2 through ion implantation”, M. H. Zhang, F. Zhu, T. Lee, H. S. Kim, I. J. Ok, G. Thareja, L. Yu, and Jack C. LeeFluorine (F) passivation in poly-Si/TaN/HfO2/p-Si gate stacks through gate ion implantation has been studied. It has been found that when the TaN thickness was less than 15 nm, the mobility and subthreshold swing improved significantly in HfO2 n-channel... (Read more)
- 2. Phys. Rev. Lett. 90, 155901 (2003) , “Fluorine in Silicon: Diffusion, Trapping, and Precipitation”, X. D. Pi, C. P. Burrows, P. G. ColemanThe effect of vacancies on the behavior of F in crystalline Si has been elucidated experimentally for the first time. With positron annihilation spectroscopy and secondary ion mass spectroscopy, we find that F retards recombination between vacancies (V) and interstitials (I) because V and I trap F to form complexes. F diffuses in the V-rich region via a vacancy mechanism with an activation energy of 2.12±0.08 eV. After a long annealing time at 700ºC, F precipitates have been observed by cross-section transmission electron microscopy which are developed from the V-type defects around the implantation range and the I-type defects at the end of range. (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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