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- 1. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 2. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 3. Phys. Rev. B 75, 085423 (2007) , “Room-temperature atmospheric oxidation of Si nanocrystals after HF etching”, X. D. Pi, L. Mangolini, S. A. Campbell, and U. KortshagenThe effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic... (Read more)
- 4. Phys. Rev. Lett. 98, 077601 (2007) , “Multiple-Pulse Coherence Enhancement of Solid State Spin Qubits”, W. M. Witzel and S. Das SarmaWe describe how the spin coherence time of a localized electron spin in solids, i.e., a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency... (Read more)
- 5. Appl. Phys. Lett. 89, 112121 (2006) , “Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects”, A. Stesmans, K. Clémer, V. V. Afanas'ev, L. F. Edge, and D. G. SchlomElectron spin resonance analysis of (100)Si/LaAlO3 structures reveals the absence of a Si/SiO2-type interface in terms of archetypal Si-dangling bond-type Si/SiO2 interface defects (Pb0,Pb1). With no... (Read more)
- 6. Appl. Phys. Lett. 89, 092120 (2006) , “Defect generation at SiO2/Si interfaces by low pressure chemical vapor deposition of silicon nitride”, Hao Jin, K. J. Weber, and P. J. SmithLow pressure chemical vapor deposition of Si3N4 on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the... (Read more)
- 7. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 8. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 9. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 10. Phys. Rev. B 71, 115204 (2005) , “Electron Spin Resonance Study of Paramagnetic Centers in Neutron-Irradiated Heat-Treated Silicon”, D. Pierreux and A. StesmansElectron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 °C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 ... (Read more)
- 11. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 12. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 13. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 14. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 15. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 16. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 17. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 18. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 19. Phys. Rev. B 64, 115308 (2001) , “Experimental Investigation of Band Structure Modification in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan, W. Takkenberg, F. D. Tichelaar, P. F. A. Alkemade.Experimental studies of size-related effects in silicon nanocrystals are reported. We present investigations carried out on nanocrystals prepared from single-crystal Si:P wafer by ball milling. The average final grain dimension varied depending on the way of preparation in the range between 70 and... (Read more)
- 20. Phys. Rev. B 63, 233202 (2001) , “Tetrahedral Mni4 Cluster in Silicon”, J. Wedekind, H. Vollmer, R. Labusch.Mni40 clusters were investigated by electron paramagnetic resonance in silicon specimens with initial doping concentrations between 1.5×1015?P cm-3 and 5×1016?B cm-3. In n-type samples and in intrinsic samples, we obtained the EPR... (Read more)
- 21. Phys. Rev. Lett. 86, 1054 (2001) , “Electron Spin Resonance Observation of the Si(111)- (7×7) Surface and Its Oxidation Process”, Takahide Umeda, Masayasu Nishizawa, Tetsuji Yasuda, Junichi Isoya, Satoshi Yamasaki, and Kazunobu TanakaElectron spin resonance (ESR) observation of dangling-bond states on the Si(111)- (7×7) surface is demonstrated for the first time. The ESR spectra clearly show that a reaction of molecular oxygen with the Si(111)- (7×7) surface is associated with the appearance of a new dangling-bond center at... (Read more)Si SiO2| EPR STM/AFM/SPM| Oxygen Pb Ps0 Ps1 Silicon dangling-bond interface surface .inp files: Si/surface(111) | last update: Masatoshi Sasaki
- 22. Physica B 302-303, 249-256 (2001) , “Hydrogen-Enhanced Clusterization of Intrinsic Defects and Impurities in Silicon”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii, M. F. Tamendarov and S. Zh. TokmoldinFormation of intrinsic and impurity defect complexes in hydrogenated monocrystalline silicon is studied. Hydrogen was incorporated into samples by different ways: either by proton implantation at 80 and 300 K, or by annealing at 1250°C for 30–60 min in a sealed quartz ampoule containing... (Read more)
- 23. Physica B 302-303, 233-238 (2001) , “Complexes of Gold and Platinum with Hydrogen in Silicon”, P. T. Huy and C. A. J. AmmerlaanThree centers that involve gold or platinum and hydrogen have been observed in n-type hydrogenated silicon by electron paramagnetic resonance. The first two centers, labeled Si-NL63 and Si-NL64, were detected in the gold-doped samples revealing hyperfine interaction with two gold atoms for the... (Read more)
- 24. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. –M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 25. Thin Solid Films 395, 266-269 (2001) , “Charge-trapping defects in Cat-CVD silicon nitride films”, T. Umeda, Y. Mochizuki, Y. Miyoshi and Y. NashimotoWe show that Cat-CVD silicon nitride films contain more than 1019 cm−3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant... (Read more)
- 26. J. Appl. Phys. 88, 1784-1787 (2000) , “Electron Spin Resonance Centers Associated with Oxygen Precipitates in Czochralski Silicon Crystals”, M. Koizuka, H. Yamada-Kaneta.We have previously concluded that the oxygen-precipitate-associated defects that we identified by the deep levels at Ev + 0.30 eV and Ec0.25 eV were the Pb centers generated in the interface between the oxygen... (Read more)
- 27. Mater. Sci. Eng. B 73, 60-63 (2000) , “EPR study of He-implanted Si”, B. Pivac, B. Rakvin, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance has been used to study the influence of thermal treatments on defect evolution in helium-implanted Czochralski single-crystal silicon. It is shown that the thermal treatment induces helium migration and capturing by vacancy clusters that transform into pressurized... (Read more)
- 28. Mater. Sci. Eng. B 71, 263 (2000) , “Comparison of Electronic Structure and Properties of Hydrogen-Associated and Thermal Double Donors in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and B. PajotInfrared (IR) and electron paramagnetic resonance (EPR) studies of quenching-dependent hydrogen-related double donor (HDD) formed in proton-implanted n-Si and p-Si upon annealing above 300°C were carried out. IR data taken at liquid He and N2 reveal that quenching-dependent IR absorption lines... (Read more)
- 29. Mater. Sci. Eng. B 71, 249 (2000) , “New (S=1) EPR AA17 center in silicon — microplatelets or precursor of platelets?”, Yu. V. Gorelkinskii, Kh. A. Abdullin, B. N. Mukashev.New (S=1) EPR spectrum (labeled Si-AA17) is observed in irradiated high-purity hydrogen-contained silicon after annealing at ≥200°C. The AA17 defect has D3d symmetry with g=2.0028, g=2.0106; A(29Si)=175.0 MHz, A=89.0 MHz; and D=±33.6 MHz, D=±16.8 MHz. It is paramagnetic in a... (Read more)
- 30. Nucl. Instrum. Methods Phys. Res. B 170, 125-133 (2000) , “Electron Paramagnetic Resonance Study of S2 Defects in Hydrogen-Implanted Silicon”, B. Rakvin, B. Pivac, R. Tonini, F. Corni and G. OttavianiElectron paramagnetic resonance spectra of S2 paramagnetic center in Float zone silicon (FZ-Si) and Czochralski silicon (CZ-Si) produced by H+2 ion-implantation and by subsequent annealing have been studied. At room temperature the spectrum exhibits an isotropic line g=2.0066±0.0002, which,... (Read more)
- 31. Phys. Rev. B 62, 15702 (2000) , “Microscopic origin of light-induced ESR centers in undoped hydrogenated amorphous silicon”, Takahide Umeda, Satoshi Yamasaki, Junichi Isoya, and Kazunobu Tanaka29Si hyperfine (hf) structures of light-induced electron-spin-resonance (LESR) centers of g=2.004 and 2.01 have been investigated in undoped hydrogenated amorphous silicon (a-Si:H) with different 29Si content (1.6, 4.7,9.1 at. %) by means of pulsed and multifrequency (3,11,34... (Read more)Si| EPR| Boron Silicon amorphous band-tail n-type p-type .inp files: Si/band-tail | last update: Takahide Umeda
- 32. Phys. Rev. B 61, 8393-8403 (2000) , “Dissociation Kinetics of Hydrogen-Passivated Pb Defects at the (111)Si/SiO2 Interface”, A. Stesmans.An electron-spin-resonance study has been carried out, both isothermally and isochronically, of the recovery under vacuum annealing from the hydrogen passivated state (symbolized as HPb) of paramagnetic Pb centers (Si3?Si•) at the (111)Si/SiO2... (Read more)
- 33. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 34. Phys. Rev. B 61, 4659-4666 (2000) , “Identification of the Oxygen-Vacancy Defect Containing a Single Hydrogen Atom in Crystalline Silicon”, P. Johannesen, B. Bech Nielsen, J. R. Byberg.Float-zone and Czochralski-grown silicon crystals have been implanted with protons or deuterons at ?50 K. Electron paramagnetic resonance measurements reveal a new signal in the spectrum of the Czochralski-grown (oxygen-rich) material. This signal is strongly temperature dependent, displaying a... (Read more)
- 35. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 36. Phys. Rev. B 61, 1918 (2000) , “EPR investigation of manganese clusters in silicon”, J. Martin, J. Wedekind, H. Vollmer, and R. LabuschManganese centers were investigated in silicon specimens with initial doping concentrations between 1.5×1015 P cm-3 and 6×1015 B cm-3. All known Mn centers could be observed but the cluster Mni3Mni was missing in highly-boron-doped... (Read more)
- 37. Phys. Rev. B 61, 16068-16076 (2000) , “Dipolar interactions between unpaired Si bonds at the (111)Si/SiO2 interface”, A. Stesmans, B. NouwenAn electron spin resonance (ESR) study has been carried out on the Pb centers (interfacial ?Si?Si3) in standard thermal (111)Si/SiO2, of which, in the as-grown state, a density 4.9×1012 cm-2 is inherently incorporated. The Pb density... (Read more)
- 38. Phys. Rev. B 61, 12939 (2000) , “Dimer of Substitutional Carbon in Silicon Studied by EPR and ab initio Methods”, J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, P. A. Fedders.An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represents a defect with S=1/2, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from 29Si nuclei in five shells... (Read more)
- 39. Phys. Rev. Lett. 85, 417 (2000) , “Extreme Reduction of the Spin-Orbit Splitting of the Deep Acceptor Ground State of ZnS- in Si”, H. Schroth, K. L. La?mann, S. Vo?, H. Bracht.Electric-dipole spin resonance of the deep acceptor ZnS- in Si reveals close Γ8 and Γ7 ground states with zero-field separation of only 0.31 meV as compared to the 43 meV of the two valence bands. With Landé's formula for the g factors of a 2T2 state split by spin-orbit interaction into Γ8 and Γ7 this nearness can be interpreted as strong quenching of the orbital moment. The observed dependence on the Zn isotopic mass indicates a dynamic contribution of the acceptor atom to the electronic state as is expected for a Jahn-Teller effect. (Read more)
- 40. Phys. Rev. Lett. 85, 2324-2327 (2000) , “Fast Diffusion of H and Creation of Dangling Bonds in Hydrogenated Amorphous Silicon Studied by in situ ESR”, U. K. Das, T. Yasuda, and S. YamasakiThe interaction of atomic hydrogen with a-Si:H films was studied by means of in situ ESR during H plasma treatment. H diffuses into the a-Si:H film and creates additional Si dangling bonds (∼1013 cm -2). We observed a high diffusion coefficient (>10-10  cm... (Read more)
- 41. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. –M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 42. Appl. Phys. Lett. 74, 3948 (1999) , “Electron Paramagnetic Resonance of Radiation Defects in Hydrogen-Implanted Silicon Detected by Spin-Dependent Microwave Photoconductivity”, R. Laiho, L. S. Vlasenko, M. P. Vlasenko, V. A. Kozlov, V. V. Kozlovski.Electron paramagnetic resonance (EPR) spectra of radiation defects induced by low-energy protons (100 keV) in a thin near-surface layer (L < 1 µm) of silicon crystals are detected with spin-dependent microwave photoconductivity. It is found that EPR spectra of the excited... (Read more)
- 43. Mater. Sci. Eng. B 58, 71 (1999) , “Hydrogen enhancement of thermally induced interface degradation in thermal (111) Si/SiO2 traced by electron spin resonance”, A. Stesmans, V. V. Afanas’ev.The process of interface degradation induced in (111)Si/SiO2 by postoxidation annealing (POA) in vacuum, previously identified by electron spin resonance (ESR) as creation of persistent Pb (Si/Si3) interface defects, is found to be strongly enhanced (≈6 times) when performed in H2 ambient,... (Read more)
- 44. Mater. Sci. Eng. B 58, 52 (1999) , “Dipolar Interactions between Unpaired Si Bonds at the (111)Si/SiO2 Interface”, A. Stesmans, B. Nouwen.Direct experimental evidence for the dipolar interactions within the two-dimensional Pb defect system at the Si/SiO2 interface is provided by the observation of anisotropy in the electron spin resonance spectra. This observation was enabled through distinct interface degradation by post-oxidation... (Read more)
- 45. Mater. Sci. Eng. B 58, 171-178 (1999) , “Self-Interstitial Related Reactions in Silicon Irradiated by Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii and S. Zh. TokmoldinRecent deep level transient spectroscopy (DLTS), electron paramagnetic resonance (EPR) and infrared (IR) spectroscopy data on interactions of self-interstitial with carbon, aluminium, oxygen and hydrogen in silicon irradiated by light ions are reviewed. Self-interstitial behaviour in silicon was... (Read more)
- 46. Microelectron. Eng. 48, 113 (1999) , “Nature of the Pb1 Interface Defect in (100)Si/SiO2 as Revealed by Electron Spin Resonance 29Si Hyperfine Structure”, A. Stesmans, V. V. Afanas’ev.Observation by electron spin resonance of the full angular dependence of the hyperfine (hf) interaction spectrum associated with the interfacial Pb1 defect in thermal (100)Si/SiO2 shows that the dominant interaction arises from a single 29Si atom. The hf tensor displays weakly monoclinic I (nearly... (Read more)
- 47. Phys. Rev. B 59, 4849 (1999) , “Electron-spin-resonance center of dangling bonds in undoped a-Si:H”, T. Umeda, S. Yamasaki, J. Isoya, K. Tanaka.A variety of electron-spin-resonance (ESR) spectra of dangling bond (g=2.0055) in undoped hydrogenated amorphous silicon (a-Si:H) have been measured by the echo-detected ESR of pulsed ESR as well as the usual continuous-wave (cw) ESR for a wide range of two experimental parameters of microwave... (Read more)
- 48. Phys. Rev. B 59, 2773 (1999) , “Electron Paramagnetic Resonance and Photoluminescence Study of Er-Impurity Complexes in Si”, J. D. Carey, R. C. Barklie, J. F. Donegan, F. Priolo, G. Franzò, S. Coffa.Electron paramagnetic resonance (EPR) and photoluminescence (PL) spectroscopy have been used to examine the structure and optical properties of erbium-impurity complexes formed in float-zone Si by multiple-energy implants at 77 K of Er together with either O or F. After implantation a 2-?m-thick... (Read more)
- 49. Physica B 273-274, 938 (1999) , “Confinement Effects on Phosphorus Donors Embedded in Silicon Nanocrystals”, B. J. Pawlak, T. Gregorkiewicz and C. A. J. AmmerlaanMagnetic resonance of shallow donor center phosphorus is used to track size-related changes of energy band structure in silicon powders. Small conduction band upshifts of several meV are determined for nanocrystals of approximately d=100 nm diameter and smaller. These are interpreted as the onset of... (Read more)
- 50. Physica B 273-274, 524 (1999) , “Tin-Vacancy Complexes in e-Irradiated n-Type Silicon”, Marco Fanciulli and Jørgen R. BybergElectron irradiated n-type float-zone silicon containing tin has been investigated by EPR. In addition to the well known Si-G29 signal due to the SnV0 complex we have observed a group of similar EPR signals with strongly anisotropic, near-trigonal g tensors, which we label DK4. The corresponding... (Read more)
- 51. Physica B 273-274, 445 (1999) , “ESR study of Fe–H complexes in Si”, Toru Takahashi and Masashi SuezawaWe studied the influence of hydrogen (H) on the properties of Fe in Si crystals based on ESR measurement. Specimens were prepared from an n-type Si crystal (phosphorus concentration; 1.5×1016 cm−3). After chemical polishing, they were doped with 57Fe by a vapor method and with H by... (Read more)
- 52. Physica B 273-274, 404 (1999) , “Dependence of Electrically Detected Magnetic Resonance Signal Shape from Iron-Contaminated Silicon Wafers on the Thermal Treatment of the Samples”, T. Mchedlidze, K. Matsumoto, T. –C. Lin, M. Suezawa.The shape of the electrically detected magnetic resonance (EDMR) signal from iron–contaminated Czochralski-grown silicon (CZ–Si) samples strongly depends on the thermal treatments applied to the samples before and after the contamination procedure, although the average g-value of the... (Read more)
- 53. Physica B 273-274, 350 (1999) , “Structure of Er-Related Centers in Si”, J. D. Carey and F. PrioloElectron paramagnetic resonance (EPR) measurements have been performed on samples of Er implanted FZ Si which have been co-implanted with O ions. For an Er concentration of 1019/cm3 well-defined Er3+ centers with monoclinic and trigonal symmetry are observed in samples with 1020 O/cm3 but are... (Read more)
- 54. Physica B 273-274, 296 (1999) , “Assignment of EPR Spectrum for Bistable Thermal Donors in Silicon”, L. F. Makarenko, N. M. Lapchuk and Ya. I. LatushkoIt has been shown that bistability of thermal double donors (TDD) in silicon can be observed by EPR technique. The spectrum of a bistable TDD species (TDD2) has been isolated using heat-treatment of Czochralsky-grown n-type silicon crystals with initial resistivity 4.5 Ω cm, at temperature... (Read more)
- 55. Physica B 273-274, 279 (1999) , “Identification of Cadmium-Related Centers in Silicon”, A. Näser, W. Gehlhoff and H. OverhofThe electronic and geometric structures of a new Cd-related center with trigonal symmetry is investigated by electron paramagnetic resonance (EPR). Isotope doping with the isotopes 111Cd and 57Fe confirmed, that the defect consists of one single Cd atom and one isolated Fe atom with a center axis in... (Read more)
- 56. Physica B 273-274, 264 (1999) , “EPR proof of the negatively charged acceptor state Zn− in silicon”, W. Gehlhoff, A. Näser, H. Bracht.The electronic properties of Zn in monocrystalline silicon were studied by means of electron paramagnetic resonance (EPR). In high-ohmic p- and n-type Si doped with Zn two new line sets were observed. One of them show the characteristic behavior of the and transitions of a Γ8 state in... (Read more)
- 57. Physica B 273-274, 256 (1999) , “Infrared Absorption Study of a New Dicarbon Center in Silicon”, E. V. Lavrov, B. Bech Nielsen, J. Byberg and J. L. LindströmInfrared absorption measurements on n-type silicon doped with carbon and irradiated with electrons at room temperature have revealed new absorption lines at 527.4 and 748.7 cm−1. The 748.7 cm−1 line is observed only when the sample is cooled down in the dark and the spectra are... (Read more)
- 58. Physica B 273-274, 239 (1999) , “Atomic and Electronic Structure of Hydrogen-Passivated Double Selenium Donors in Silicon”, P. T. Huy, C. A. J. Ammerlaan and T. GregorkiewiczSelenium–hydrogen-related defects in silicon have been investigated by magnetic resonance. Two new electron paramagnetic resonance (EPR) spectra Si-NL60 and Si-NL61 of selenium–hydrogen complexes were observed. By application of the electron nuclear double resonance (ENDOR) and field... (Read more)
- 59. Physica B 273-274, 204 (1999) , “Hydrogen Interactions with Interstitial- and Vacancy-Type Defects in Silicon”, S. Zh. Tokmoldin, B. N. Mukashev, Kh. A. Abdullin and Yu. V. GorelkinskiiIR and EPR studies of hydrogen interactions with defects in silicon implanted with protons and deuterons were carried out. An analysis of temperature dependence of Si–H local mode anharmonicity, using isotope substitution of H by D, revealed that anharmonicity is sensitive to the environment... (Read more)
- 60. Physica B 273-274, 180 (1999) , “The A Center Binding a Single Hydrogen Atom in Crystalline Silicon Observed by EPR”, P. Johannesen, J. R. Byberg, B. Bech Nielsen.Electron paramagnetic resonance measurements on proton- and deuteron-implanted silicon crystals reveal a new signal from a vacancy-type defect with spin , which is observable only in oxygen-rich material. The signal is strongly temperature-dependent, displaying monoclinic-I symmetry below 180 K and... (Read more)
- 61. Physica B 273-274, 171 (1999) , “Hydrogen-Induced Extended Complexes in Silicon”, Yu. V. Gorelkinskii, Kh. A. Abdullin and B. N. MukashevNew EPR spectrum, labeled Si-AA17, forms upon annealing at 200°C in irradiated high-purity hydrogen-containing silicon and is stable up to 450°C. The AA17 defect has D3d symmetry, electronic spin S=1 and it is paramagnetic in a neutral charge state. An analysis of 29Si hf interaction has... (Read more)
- 62. Physica B 273-274, 1015 (1999) , “Electron spin resonance study of the interaction of hydrogen with the (1 1 1)Si/SiO2 interface: Pb-hydrogen interaction kinetics”, A. Stesmans.The thermal interaction kinetics of interfacial Si dangling bond Pb defects (Si3≡Si·) in (1 1 1)Si/SiO2, including passivation in molecular hydrogen (pictured as PbH formation) and dissociation in vacuum, is readdressed. An initial simple thermal model had concluded simple exponential... (Read more)
- 63. Appl. Phys. Lett. 73, 3250 (1998) , “Electron Paramagnetic Resonance Evidence for Reversible Transformation of Thermal Donor into Shallow Donor-Type Center in Hydrogen-Implanted Silicon”, B. Rakvin, B. Pivac, R. Tonini, F. Corni, G. Ottaviani.Electron paramagnetic resonance spectrum of the proton-related thermal donor (TD) assigned as NL8 paramagnetic center has been detected at 110 K after heat treatment of the hydrogen-implanted Czochralski-Si at 773 K. The effect of temperature on reversible transformations of the anisotropic spectrum... (Read more)
- 64. Appl. Phys. Lett. 73, 1119 (1998) , “Silicon Di-Interstitial in Ion-Implanted Silicon”, Young Hoon LeeA new Si di-interstitial model is derived from the Si-P6 electron paramagnetic resonance spectrum observed in neutron-, proton-, or ion-implanted silicon. Two Si interstitials lie in the {100} plane at a position considerably off from two tetrahedral interstitial sites nearby, sharing one Si... (Read more)
- 65. Appl. Phys. Lett. 72, 2271 (1998) , “Hydrogen-Induced Thermal Interface Degradation in (111) Si/SiO2 Revealed by Electron-Spin Resonance”, A. Stesmans, V. V. Afanas’ev.Electron-spin resonance (ESR) experiments show that the interface degradation induced in thermal (111) Si/SiO2 by postoxidation annealing (POA) in vacuumpreviously isolated by ESR as a permanent creation of Pb (SiSi3) interface defectsis... (Read more)
- 66. J. Appl. Phys. 84, 4847 (1998) , “Stress-Induced Alignment and Reorientation of Hydrogen-Associated Donors in Silicon”, Yu. V. Gorelkinskii, N. N. Nevinnyi, and Kh. A. AbdullinElectron paramagnetic resonance (EPR) studies have been made of the stress-induced alignment and the subsequent recovery of the double donor (AA1 EPR center) that is formed in float-zone silicon following hydrogen implantation and annealing for ~ 20 min at a temperature above ~ 300 °C. The... (Read more)
- 67. J. Appl. Phys. 83, 4042 (1998) , “Electrically Detected Magnetic Resonance Signal from Iron Contaminated Czochralski Silicon Crystal”, T. Mchedlidze and K. MatsumotoThe electrical detection of magnetic resonance (EDMR) measurement, a detection method for the spin-dependent recombination, was applied to characterize iron contaminated silicon samples grown by the Czochralski method. The observed signal was different than previously reported electron paramagnetic... (Read more)
- 68. J. Appl. Phys. 83, 2449-2457 (1998) , “Electron spin resonance features of interface defects in thermal (100)Si/SiO2”, A. Stesmans and V. V. Afanas'evElectron spin resonance (ESR) on thermal (100)Si/SiO2 predominantly exhibiting either the Pb0 or Pb1 interface defect confirms the Pb1 point symmetry as monoclinic-I with g1 = 2.0058,... (Read more)
- 69. J. Phys.: Condens. Matter 10, L465 (1998) , “29Si Hyperfine Structure of the Pb1 Interface Defect in Thermal (100)Si/SiO2”, A. Stesmans, B. Nouwen, V. V. Afanas’ev.The observation of the electron spin resonance hyperfine (hf) spectra associated with the unpaired electron of the interface defect in thermal shows that the dominant interaction arises from a single isotope. The hf tensor displays weakly monoclinic I (nearly axial) symmetry, with the... (Read more)
- 70. J. Phys.: Condens. Matter 10, L19 (1998) , “Undetectability of the Pb1 Point Defect as an Interface State in Thermal (100)Si/SiO2”, A. Stesmans, V. V. Afanas’ev.The electrical activity of the electron-spin-resonance-active interfacial point defects and (unpaired Si bonds) has been examined on standard thermal . After elimination of the H-passivation factor, this has been achieved through combination of electrical and ESR analysis on common suites of... (Read more)
- 71. J. Phys.: Condens. Matter 10, 89 (1998) , “Positively Charged Bonded States of Hydrogen at the (111)Si/SiO2 Interface”, V. V. Afanas’ev, A. Stesmans.Annealing of thermal in hydrogen in the temperature range is found to introduce a considerable density (up to ) of positively charged centres, ascribed to H bonding. However, there is no comparable density of dangling bonds initially present nor generated at the interface that could account for... (Read more)
- 72. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 73. Nucl. Instrum. Methods Phys. Res. B 135, 260 (1998) , “Defect production in silicon irradiated with 750 MeV Ar ions1”, Z. Zhu, M. Hou, Y. Jin, C. Liu, Y. Wang, J. Han.Specimens of about 320 μm thick and 1 1 1 oriented single crystalline silicon are irradiated with 750 MeV argon ions at room temperature to dose levels of 9×1013 and 4.3×1014 Ar/cm2. Positron lifetime measurements, fourier transform infrared absorption (FT–IR) and electron... (Read more)
- 74. Nucl. Instrum. Methods Phys. Res. B 135, 219 (1998) , “Damage production in silicon irradiated with 112 MeV Ar ions1”, C. Liu, M. Hou, Z. Zhu, Z. Wang, S. Cheng, Y. Jin, Y. Sun, C. Li.Silicon samples were irradiated below 50 K with 112 MeV Ar ions. Defect production was investigated at room temperature by EPR and infrared optical absorption techniques. The EPR measurements reveal the presence of amorphous zones and neutral tetravacancies (Si–P3 center) in the as-irradiated... (Read more)
- 75. Phys. Rev. B 58, 7007 (1998) , “Sulfur-Related Metastable Luminescence Center in Silicon”, P. W. Mason, H. J. Sum, B. Ittermann, S. S. Ostapenko, G. D. Watkins, L. Jeyanathan, M. Singh, G. Davies, E. C. Lightowlers.Optical detection of magnetic resonance (ODMR) and photoluminescence (PL) studies are described for the sulfur-related metastable defect in silicon first reported by Brown and Hall. It is established that its two configurations, A and B, are of triclinic (C1) symmetry, and the... (Read more)
- 76. Phys. Rev. B 58, 3842 (1998) , “Electron Paramagnetic Resonance Study of Hydrogen-Vacancy Defects in Crystalline Silicon”, P. Stallinga, P. Johannesen, S. Herstm, K. Bonde Nielsen, B. Bech Nielsen, J. R. Byberg.Electron paramagnetic resonance measurements on float-zone silicon implanted with protons at ?50 K followed by heating to room temperature have revealed two signals S1a and S1b belonging to the S1 group of signals. S1a and S1b both originate from defects... (Read more)
- 77. Phys. Rev. B 58, 15801-15809 (1998) , “Pb1 interface defect in thermal (100)Si/SiO2: 29Si hyperfine interaction”, A. Stesmans, B. Nouwen, V. V. Afanas’evAn optimized electron spin resonance study has resulted in the observation of the full angular dependence of the hyperfine interaction spectrum associated with the unpaired electron of the Pb1 point defect at the thermal (100)Si/SiO2 interface, showing that the dominant... (Read more)
- 78. Phys. Rev. B 57, 9657 (1998) , “Self-Interstitial Shallow-Donor Complexes in Silicon: An Electron-Paramagnetic-Resonance Study”, O. Scheerer, U. Juda, and M. HöhneAn electron-paramagnetic-resonance (EPR) study on silicon samples quenched after diffusion of gold (or platinum) from a metallic layer on the surface results in the presence of two types of paramagnetic centers replacing the donor P center. According to the analysis these centers consist of a P... (Read more)
- 79. Phys. Rev. B 57, 10030 (1998) , “Electrical Activity of Interfacial Paramagnetic Defects in Thermal (100) Si/SiO2”, A. Stesmans, V. V. Afanas’ev.The correlation between the detrimental electrically active interface traps and the electron-spin-resonance-active point defects Pb0 and Pb1 (unpaired Si orbitals) was studied through controlled variation, both relatively and absolutely, of the defect bath densities. Unlike... (Read more)
- 80. Phys. Rev. Lett. 80, 423 (1998) , “Chen et al. Reply:”, W. M. Chen, O. O. Awadelkarim, B. Monemar, J. L. Lindström, G. S. Oehrlein.A Reply to the Comment by P. Stallinga and B. Bech Nielsen. (Read more)
- 81. Phys. Rev. Lett. 80, 422 (1998) , “Comment on “Microscopic Identification and Electronic Structure of a Di-Hydrogen–Vacancy Complex in Silicon by Optical Detection of Magnetic Resonance””, P. Stallinga and B. Bech NielsenA Comment on the Letter by W. M. Chen, et al., Phys. Rev. Lett. 64, 3042 (1990). The authors of the Letter offer a Reply. (Read more)
- 82. Phys. Rev. Lett. 80, 1489 (1998) , “Electron Exchange Interaction in S = 1 Defects Observed by Level Crossing Spin Dependent Microwave Photoconductivity in Irradiated Silicon”, R. Laiho, M. M. Afanasjev, M. P. Vlasinko, L. S. Vlasenko.Spin dependent change of photoconductivity is observed for the first time at magnetic field induced crossing of a ground singlet (S = 0) and an excited triplet (S = 1) state levels of structural defects in irradiated silicon. These defects include two electrons localized on points of trigonal... (Read more)
- 83. Phys. Solid State 40, 195 (1998) , “Depth Distribution of Point Defects in Si Bombarded by High-Energy N5+ and Si5+ Ions”, A. V. Dvurechenski?, A. A. Karanovich, R. Grtzschel, F. Herrmann, R. Kegler, A. V. Rybin.Electron spin resonance has been used to study the depth distribution of point defects in Si samples bombarded by N5+ (E=16 MeV) and Si5+ (E=26.8 MeV) ions at 175 and 300 K in the dose range (4–8)×1015 cm-2. It was established that unlike the implantation of moderate-energy Si ions (E ∼ 100 keV), the depth distributions of planar tetravacancies in samples bombarded by ions at 300 K under these conditions have two maxima. The experimental results indicate that the tetravacancy density maximum closer to the surface is formed as a result of secondary defect formation processes. No continuous amorphous layer was observed in the bulk of any of the Si samples. This experimental observation is evidence of defect annealing which takes place when high-energy ions are implanted in Si. (Read more)
- 84. phys. stat. sol. (a) 168, 73 (1998) , “Self-Interstitials in Silicon Irradiated with Light Ions”, B. N. Mukashev, Kh. A. Abdullin, Yu. V. Gorelkinskii.The behavior of self-interstitials in silicon which was irradiated with light ions (protons and -particles) and electrons was explored by monitoring known impurity interstitial centers (Ci, Ali, (Si-O)i) with deep level transient spectroscopy (DLTS) and electron... (Read more)
- 85. phys. stat. sol. (b) 210, 753 (1998) , “Identification of a Donor State of Substitutional Cadmium in Silicon”, A. Näser, W. Gehlhoff, H. Overhof, R. A. Yankov.The structural and electronic properties of cadmium in p-type silicon were studied by means of EPR. Cd was diffused in one set of samples whereas in a second set we used high energy implantations in the MeV range for doping, followed by a high temperature annealing step at 1200 (Read more)
- 86. phys. stat. sol. (b) 210, 747 (1998) , “Nonlinear Zeeman Splitting of the Si:Be - s Acceptor Ground State: Influence of the p1/2 Split-Off Valence Band?”, H. Schroth, K. Lassmann, Chr. Borgmann, H. Bracht.Electric-dipole spin resonance (EDSR) spectra at 24, 34, and 60 GHz of Si:Be show six absorption lines with characteristics similar to those previously observed for the +8 ground state of group-III single acceptors. From the dependence on Fermi level position we attribute these... (Read more)
- 87. phys. stat. sol. (b) 210, 631 (1998) , “Confinement Effects of Phosphorus Donors Embedded in Silicon Microcrystals”, B. J. Pawlak, T. Gregorkiewicz, C. A. J. Ammerlaan.Due to their extended electronic structure shallow donors are believed to be very sensitive to confinement effects. Our interest is to investigate the influence of size on the properties of shallow donor phosphorus in mechanically milled silicon microcrystals. The crystallinity of powders is... (Read more)
- 88. phys. stat. sol. (b) 210, 545 (1998) , “EPR Study of Hydrogen-Related Radiation-Induced Shallow Donors in Silicon”, V. P. Markevich, T. Mchedlidze, M. Suezawa, L. I. Murin.An electron paramagnetic resonance (EPR) study of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1-D3) were observed earlier by means of infrared absorption measurements in hydrogenated Czochralski-grown Si (Cz-Si) crystals after... (Read more)
- 89. phys. stat. sol. (b) 210, 539 (1998) , “Individual Thermal Donor Species Studied with High-Field Magnetic Resonance”, R. Dirksen, T. Gregorkiewicz, C. A. J. Ammerlaan.Thermal donors generated in p-type boron-doped Czochralski-grown silicon by a 450 °C heat treatment have been studied by high-field magnetic resonance spectroscopy. The experiments were conducted at a microwave frequency of 140 GHz and in a magnetic field of approximately 5 T. The symmetry of the... (Read more)
- 90. Semicond. Sci. Technol. 13, 725 (1998) , “Electron Nuclear Double Resonance Investigation of Iron-Acceptor Pairs in Silicon”, J. –M. Spaeth, S. Martini, S. Greulich-Weber.With stationary electron nuclear double resonance (ENDOR) the two - pairs having trigonal and orthorhombic symmetry, respectively, and the trigonal - pair have been investigated. The hyperfine and quadrupole interactions with the interstitial and the acceptor nuclei and , respectively, have been... (Read more)
- 91. Semiconductors 32, 375 (1998) , “Observation of Low-Temperature Diffusion of Aluminum Impurity Atoms in Hydrogen-Implanted Silicon”, Yu. V. Gorelkinski?, B. N. Mukashev, Kh. A. Abdullin.
- 92. Appl. Phys. Lett. 71, 1703 (1997) , “Al–Al pair in silicon: Evidence for long-range hydrogen-enhanced aluminum migration”, Kh. A. Abdullin, B. N. Mukashev, and Yu. V. GorelkinskiiIn this letter, we present results of electron paramagnetic resonance studies of new defects (labeled Si-AA15 and Si-AA16) incorporated aluminum atoms. The AA15 defect is created in hydrogen-doped silicon by low temperature (~ 80 K) irradiation, and an 27Al (100% abundant, I = 5/2)... (Read more)
- 93. Appl. Phys. Lett. 70, 1137 (1997) , “In situ electron-spin-resonance measurements of film growth of hydrogenated amorphous silicon”, Satoshi Yamasaki, Takahide Umeda, Junichi Isoya, and Kazunobu TanakaIn situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the... (Read more)
- 94. J. Appl. Phys. 82, 3456 (1997) , “Carbon-Related Platinum Defects in Silicon: An Electron Paramagnetic Resonance Study of High Spin States”, O. Scheerer, M. Höhne, U. Juda, and H. RiemannIn this article, we report about complexes in silicon investigated by electron paramagnetic resonance (EPR). In silicon doped with C and Pt we detected two different complexes: cr-1Pt (cr: carbon-related, 1Pt: one Pt atom) and cr-3Pt. The complexes have similar EPR properties. They show a trigonal... (Read more)
- 95. J. Appl. Phys. 81, 7468 (1997) , “Electron Paramagnetic Resonance of Porous Silicon: Observation and Identification of Conduction-Band Electrons”, C. F. Young, E. H. Poindexter, G. J. Gerardi.New features in electron paramagnetic resonance (EPR) of porous silicon have been examined here. A new isotropic EPR center was observed at g=1.9995(1) at T=4.2 K, in both p-type and n-type porous silicon. By comparing its g value with those of shallow donors in... (Read more)
- 96. J. Appl. Phys. 81, 1109 (1997) , “Stress-induced alignment of NL8 thermal donors in silicon: Energetics and kinetics”, J. M. Trombetta, G. D. Watkins, J. Hage, P. Wagner.Preferential alignment is produced for the NL8 thermal double donors (TDDs) when uniaxial stress is applied during their formation at ~ 450 °C. The recovery kinetics reveal that they can reorient readily on the time scale of their lifetime and their individual alignments therefore reflect the... (Read more)
- 97. J. Phys.: Condens. Matter 9, 3299 (1997) , “Reply to the Comment on ‘Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing’”, A. Stesmans, V. V. Afanas’ev.Regarding the electron spin resonance work (Stesmans and Afanas'ev (1996) J. Phys.: Condens. Matter 8 L505) reporting on a newly resolved interface defect generation mechanism operative during postoxidation annealing in inert ambient above , Stathis ( J. Phys.: Condens.... (Read more)
- 98. J. Phys.: Condens. Matter 9, 3297 (1997) , “Comment on ‘Creation of Pb Interface Defects in Thermal Si/SiO2 through Annealing’”, J. H. Stathis.Some suggestions are offered to explain the discrepancies between the work of Stesmans and others. (Read more)
- 99. Jpn. J. Appl. Phys. 36, 6807 (1997) , “Relation between the Metastability and the Configuration of Iron-Acceptor Pairs in Silicon”, H. Takahashi, M. Suezawa, K. Sumino.To determine the energy differences between the first and second nearest-neighbor iron (Fe)-acceptor pairs in silicon, the generation and annihilation processes of these pairs were investigated by means of electron spin resonance (ESR). Isochronal annealing of the Fe-doped specimen revealed... (Read more)
- 100. Phys. Rev. B 56, R12695 (1997) , “Silicon Incorporation in a Shallow Donor Center in Hydrogenated Czochralski-Grown Si Crystals: An EPR Syudy”, V. P. Markevich, T. Mchedlidze, and M. SuezawaAn electron paramagnetic resonance (EPR) signal, labeled TU1, has been found in hydrogenated Czochralski-grown Si crystals after irradiation with fast electrons and annealing at 300–400 °C. An isotropic g factor of 1.9987 indicates the shallow donor nature of the defect giving rise to the signal.... (Read more)
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