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- 1. Phys. Rev. Lett. 23, 581 (1969) , “Electron Spin Resonance in Amorphous Silicon, Germanium, and Silicon Carbide”, M. H. Brodsky and R. S. TitleThe g values, line shapes, and linewidths of the ESR signals from within the bulk of amorphous silicon, germanium, and silicon carbide are found to be similar to those of the electron states observed in the surface regions of the corresponding crystalline forms. Discussion is given in terms of a... (Read more)Ge Si SiC| EPR| Carbon D Germanium Silicon amorphous dangling-bond .inp files: Si/amorphous | last update: Takahide Umeda
- 2. Phys. Rev. 134, A265 (1964) , “Electron Spin Resonance Experiments on Shallow Donors in Germanium”, D. K. WilsonAt liquid helium temperatures, spin resonance of localized donor electrons has been observed in phorphorus-, arsenic-, and bismuth-doped germanium. The presence of hyperfine splitting confirms the singlet as the ground state for all three. The separation of the excited triplet states has been... (Read more)
- 3. J. Phys. Chem. Solids 24, 1467 (1963) , “Spin and combined resonance on acceptor centres in Ge and Si type crystals—I Paramagnetic resonance in strained and unstrained crystals”, G. L. Bir, E. I. Butikov, G. E. Pikus.A theory of paramagnetic resonance on acceptor centres in deformed and non-deformed Ge and Si type crystals is developed. The splitting of the ground state under the action of the deformation and magnetic field is determined and the probability of transitions between levels is estimated. Using the... (Read more)
- 4. J. Phys. Chem. Solids 8, 490 (1959) , “Spin resonance of deep level impurities in germanium and silicon”, G. W. Ludwig, H. H. Woodbury and R. O. CarlsonElectron spin resonance measurements have been reported for nickel and manganesein germanium.We have been studying several deep level impurities in germanium and silicon be resonance tecniques,but only two system,nickel in germanium and manganese in silicon,will be discussed here. (Read more)
- 5. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
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