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- 1. Phys. Rev. Lett. 98, 077601 (2007) , “Multiple-Pulse Coherence Enhancement of Solid State Spin Qubits”, W. M. Witzel and S. Das SarmaWe describe how the spin coherence time of a localized electron spin in solids, i.e., a solid state spin qubit, can be prolonged by applying designed electron spin resonance pulse sequences. In particular, the spin echo decay due to the spectral diffusion of the electron spin resonance frequency... (Read more)
- 2. Phys. Rev. B 73, 33201 (2006) , “Manganese on various lattice sites in (Ga,Mn)As investigated using electron paramagnetic resonance”, T. WeiersThe differences between variously doped and grown samples of manganese-doped GaAs have been studied and set in relation to the magnetic and electronic properties of these materials. For interion exchange and contrary to the resolved hyperfine and crystal field contributions from the ionized acceptor... (Read more)
- 3. Physica B 373, 182-193 (2006) , “Electron–nuclear double resonance and dynamic nuclear polarization in GaAs in the regime of the quantum Hall effect”, E. Olshanetsky, J.D. Caldwell, A.E. Kovalev, C.R. Bowers, J.A. Simmons , J.L. RenoElectron spin resonance (ESR) and electron-nuclear double resonance experiments were performed in the 2D electron systems of GaAs/AlxGa1−xAs quantum well and heterojunction samples in the vicinity of the unity filling factor in the regime of the quantum Hall effect. As is well known, the ESR... (Read more)
- 4. AIP Conf. Proc. 772, 121 (2005) , “ESR Study of Zn-codoping Effect on the Luminescence Efficiency of the Er-2O Center in GaAs:Er,O”, M. Yoshida, K. Hiraka, H. Ohta, Y. Fujiwara, A. Koizumi, and Y. TakedaESR measurements of Zn-codoped GaAs:Er,O have been performed at 9.49 GHz. Several anisotropic ESR signals (A, B, and C) are observed. We found that the intensity of the C center decreases together with the decrease of the PL intensity by increasing the doping amount of Zn, while the changes of the... (Read more)
- 5. J. Appl. Phys. 97, 23909 (2005) , “Electron spin resonance study of Zn-codoping effect on the local structure of the Er-related centers in GaAs:Er,O”, Makoto Yoshida, Kensaku Hiraka, Hitoshi Ohta, Yasufumi Fujiwara, Atsushi Koizumi, Yoshikazu TakedaElectron spin resonance (ESR) measurements of Zn-codoped GaAs:Er,O grown by organometallic vapor phase epitaxy have been performed at 9.49 GHz. Several anisotropic ESR signals (named as A, B, and C) are observed. The angular and temperature dependences of the A, B, and C signals are quite... (Read more)
- 6. Phys. Rev. B 72, 115205 (2005) , “Defect identification in the AsGa family in GaAs”, H. Overhof and J.-M. SpaethAb initio total-energy calculations are presented for intrinsic defects in GaAs with a particular emphasis on hyperfine interactions in order to clarify the atomic structure of the various AsGa-related defects. For the AsGa-X2 defect complex the... (Read more)
- 7. Semiconductors 39, 493 (2005) , “Magnetic Ordering Effects in Heavily Doped GaAs:Fe Crystals”, B. P. Popov, V. K. Sobolevski?, E. G. Apushkinski?, V. P. Savel'evThe exchange coupling of Fe centers in GaAs crystals is studied by electron spin resonance (ESR). Transitions to a superparamagnetic state and to an impurity ferromagnetism domain are analyzed. A study of a system of single-domain magnetically ordered regions in GaAs:Fe with the transition to a ferromagnetic state occurring at the temperature T C1 = 460 K is described. It is shown that impurity ferromagnetism with a transition temperature T C2 of 60 K in a disordered system of Fe centers randomly distributed among superparamagnetic regions exists in GaAs:Fe. (Read more)
- 8. J. Appl. Phys. 96, 4189 (2004) , “Electron spin resonance study of GaAs:Er,O grown by organometallic vapor phase epitaxy”, Makoto Yoshida, Kensaku Hiraka, Hitoshi Ohta, Yasufumi Fujiwara, Atsushi Koizumi, Yoshikazu TakedaElectron spin resonance (ESR) measurements of GaAs:Er,O grown by organometallic vapor phase epitaxy have been performed at 9.49 GHz from 4.5 to 13 K. Several anisotropic ESR signals (A, B, C, and D) are observed, which is consistent with the previous reports. We... (Read more)
- 9. Physica E 21, 928-932 (2004) , “Electron spin resonance and nuclear spin pumping in 2DEG quantum Hall system”, S. Teraoka , A. Numata , S. Amaha , K. Ono , S. TaruchaWe prepare a microwave electron spin resource (ESR) cavity for detecting a response from a 2DEG in an n-AlGaAs/GaAs. The response is obtained as a change in the longitudinal resistance (Δρxx) in v=3 quantum Hall region, particularly as a peak in Δρxx for resonance. We use the data of ESR to evaluate the g-factor and the lower bound for dephasing time. The resonance magnetic field suffers from nuclear spin effects via the hyperfine coupling, resulting in the ESR peak shift. We find the ESR peak shift or Overhauser shift decays with two time constants, suggesting the existence of two different origins for the relaxation. (Read more)
- 10. Rev. Sci. Instrum. 75, 4781 (2004) , “W-band Fabry–Pérot microwave reasonators for optical detected electron paramagnetic resonance and electron nuclear double resonance of paramagnetic defects in solids”, I. Tkach, U. Rogulis, S. Greulich-Weber, and J.-M. SpaethThe designs of W-band (~95 GHz) FabryPérot microwave resonators for optically detected electron paramagnetic resonance (ODEPR) and electron nuclear double resonance (ODENDOR) as well as the ODEPR/ODENDOR spectrometer are described. The FabryPérot resonator was... (Read more)
- 11. Phys. Rev. B 68, 193204 (2003) , “Arsenic-antisite defect in GaAs: Multiplicity of charge and spin states”, D. J. ChadiWe find that the As-antisite defect in GaAs which is the source of the stable EL2 and metastable EL2* centers can exist in at least eight different combinations of charge and structural states, twice as many as currently envisaged. In particular, results from first-principles... (Read more)
- 12. Phys. Rev. B 67, 33301 (2003) , “Electron spin coherence in semiconductors: Considerations for a spin-based solid-state quantum computer architecture”, Rogerio de Sousa and S. Das SarmaWe theoretically consider coherence times for spins in two quantum computer architectures, where the qubit is the spin of an electron bound to a P donor impurity in Si or within a GaAs quantum dot. We show that low-temperature decoherence is dominated by spin-spin interactions, through spectral... (Read more)
- 13. Phys. Rev. B 67, 165325 (2003) , “Temperature dependence and mechanism of electrically detected ESR at the v=1 filling factor of a two-dimensional electron system”, Eugene Olshanetsky, Joshua D. Caldwell, Manyam Pilla, Shu-chen Liu, Clifford R. Bowers, Jerry A. Simmons, John L. RenoElectrically detected electron spin resonance (EDESR) signals were acquired as a function of temperature in the 0.34.2 K temperature range in an AlGaAs/GaAs multiple-quantum-well sample at the = 1 filling factor at 5.7 T. In the particular sample studied, the linewidth is approximately... (Read more)
- 14. Physica E 17, 320-321 (2003) , “Temperature dependence of electrically detected ESR at filling factor ν=1 in a 2DEG”, Eugene Olshanetsky, Manyam Pilla, Joshua D. Caldwell, Clifford R. Bowers, Jerry A. Simmons and John L. RenoElectrically detected electron spin resonance (ESR) was measured as a function of temperature for 0.3–4.2 K in a AlGaAs/GaAs multiple quantum well sample at filling factor ν=1. The ESR amplitude exhibits a maximum at about 2.2 K and vanishes with increased or decreased temperature. To... (Read more)
- 15. Polyhedron 22, 225-233 (2003) , “Study on guanidino–carboxylate interactions in copper(II) ternary complexes of guanidinoacetic acid with glutamic and aspartic acids”, Jussara Lopes de Miranda and Judith FelcmanThe possibility of occurrence of biological relevant guanidino–carboxylate interactions was investigated in ternary systems involving guanidinoacetic (Gaa) and glutamic acid (Glu), aspartic acid (Asp) or glycine (Gly). The study was done in solution using potentiometry, ultraviolet visible... (Read more)
- 16. Semiconductors 37, 918 (2003) , “The Relaxation of the Neutral State of Manganese in Gallium Arsenide”, V. F. Masterov, K. F. Shtel'makh, V. P. Maslov, S. B. Mikhrin, B. E. SamorukovResults of investigations of the longitudinal magnetic relaxation of the neutral state of the Mn0 center in GaAs are presented. Relaxation mechanisms were determined from the broadening of the electron-spinresonance line in the temperature range of 3.4–8.2 K and from the variation in the nuclear relaxation rate in the range of 36–310 K. The nuclear relaxation investigation demonstrates that the electron relaxation is governed by the interaction between lattice vibrations and local vibrations of the center. This allows one to represent the electron relaxation at low temperatures as the consequence of anharmonicity of local vibrations of the electron dipole moment of the Mn0 center. (Read more)
- 17. Semiconductors 37, 872 (2003) , “ESR of Interacting Manganese Centers in Gallium Arsenide”, K. F. Shtel'makh, M. P. Korobkov, I. G. OzerovESR of Mn-doped GaAs is studied. The results indicate the presence of an interstitial impurity state in GaAs:Mn which is involved in the Coulomb interaction with the substitutional Mn states. Analysis of the temperature variations of ESR spectra and the values of the g factor shows that the interstitial center has a d5 electron configuration. The substitutional Mn create a strong random crystal field at the interstitial Mn ion. The results can be explained by assuming the existence of a nonzero dipole moment in the neutral state of Mn. (Read more)
- 18. Phys. Rev. B 66, 45201 (2002) , “Single ion anisotropy of Mn-doped GaAs measured by electron paramagnetic resonance”, O. M. Fedorych, E. M. Hankiewicz, Z. Wilamowski, J. SadowskiAn electron-paramagnetic-resonance (EPR) study of molecular-beam-epitaxy-grown Mn-doped GaAs is presented. The resolved fine structure in insulating Ga1-xMnxAs allows us to evaluate the crystal-field parameters of the spin Hamiltonian. The exchange narrowing of the structure,... (Read more)
- 19. Phys. Rev. B 64, 41307 (2001) , “Gate-controlled electron spin resonance in GaAs/AlxGa1-xAs heterostructures”, H. W. Jiang, Eli YablonovitchThe electron spin resonance (ESR) of two-dimensional electrons is investigated in a gated GaAs/AlGaAs heterostructure. We found that the ESR resonance frequency can be tuned by means of a gate voltage. The front and back gates of the heterostructure produce opposite g-factor shift, suggesting that... (Read more)
- 20. Phys. Rev. B 64, 201308 (2001) , “Magnetic-field pinning of a dynamic electron-spin-resonance line in a GaAs/AlxGa1-xAs heterostructure”, Chris Hillman, H. W. JiangElectrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under microwave and radio-frequency double excitations, we have observed that the ESR line can be... (Read more)
- 21. Physica B 308-310, 749-752 (2001) , “Magneto-optical and ODEPR investigations of native defects in substrate-free LT-MBE grown GaAs”, I. Tkach, K. Krambrock, C. Steen, P. Kiesel and J. -M. SpaethAs-grown substrate-free LT-GaAs (200°C) and annealed samples (up to 660°C) have been investigated with magnetic circular dichroism of absorption (MCDA) and optically detected electron paramagnetic resonance (MCDA-EPR) in K- and W-bands. MCDA-EPR spectra of all samples reveal several... (Read more)
- 22. Physica B 294-295, 298-301 (2001) , “High field magnetoresistance and ESR measurements on Ni stripes on GaAs substrate”, A. Matsuo, M. Taki, S. A. Haque, Y. Yamamoto, T. Kikutani, S. Yamada, H. Nojiri, M. Motokawa and H. HoriNi nanowires fabricated on a GaAs substrate, which have width narrower than 500 nm and thickness 50 nm, showed an antiferromagnetic-like domain structure. Many Ni nanowires fabricated on GaAs using the electron beam lithography technique have been studied by electron spin resonance (ESR). Splitting... (Read more)
- 23. Physica E 10, 57-61 (2001) , “Millimeter wave and DC investigations of spin effects in the 2DES of AlGaAs/GaAs”, R. Meisels, K. Dybko, F. Ziouzia, F. Kuchar, R. Deutschmann, G. Abstreiter, G. Hein and K. PierzThe spin properties of the 2DES in AlGaAs/GaAs heterostructures are studied via the electron spin resonance (ESR) of conduction electrons and via the temperature dependence of the DC-σxx(B) conductivity component. The ESR is investigated at integer (ν=1) and fractional filling factors... (Read more)
- 24. Physica E 10, 399-402 (2001) , “Codoping effect of O2 into Er-doped InP epitaxial layers grown by OMVPE”, H. Ohta, C. Urakawa, Y. Nakashima, J. Yoshikawa, T. Koide, T. Kawamoto, Y. Fujiwara , Y. TakedaThe temperature dependence of ESR in InP:Er and the O2 codoping effect in InP:Er have been studied by X-band ESR measurement at low temperature. The ESR at around g=6, which corresponds to Er3+ site with Td symmetry, lost it's intensity quickly as the temperature is increased and disappeared above... (Read more)
- 25. Physica E 10, 395-398 (2001) , “ESR study of GaAs:Er codoped with oxygen grown by organometallic vapor phase epitaxy”, J. Yoshikawa, C. Urakawa, H. Ohta, T. Koide, T. Kawamoto, Y. Fujiwara and Y. TakedaX-band ESR measurements of GaAs:Er grown at 543°C by organometallic vapor phase epitaxy (OMVPE) with and without an additional O2 flow (samples I and II, respectively) have been performed at 3.5 K. Sample I shows an isotropic ESR signal around g=6 together with several anisotropic ESR signals... (Read more)
- 26. Physica E 10, 175-180 (2001) , “Monitoring the sign reversal of the valence band exchange integral in (Ga,Mn)As”, W. Heimbrodt, Th. Hartmann, P. J. Klar, M. Lampalzer, W. Stolz, K. Volz, A. Schaper, W. Treutmann, H. -A. Krug von Nidda, A. Loidl, T. Ruf and V. F. SapegaWe report the successful growth of magnetic Ga1−xMnxAs layers on (1 0 0) GaAs substrates by metal-organic vapour-phase epitaxy. Depending on the growth parameters, two different magnetic phases of Ga1−xMnxAs can be grown. (i) At low Mn-concentrations, Ga1−xMnxAs alloys are... (Read more)
- 27. Phys. Rev. B 61, 5637 (2000) , “Electron spin resonance of the two-dimensional electron system in AlxGa1-xAs/GaAs at subunity filling factors”, R. Meisels, I. Kulac, F. Kuchar, M. KriechbaumThe electron spin resonance (ESR) of a two-dimensional electron system (2DES) in AlxGa1-xAs/GaAs in the regime of fractional filling (ν<1) of the lowest Landau level is investigated by a photoconductivity technique at millimeter wave frequencies. By performing the experiments... (Read more)
- 28. Physica B 291, 270-274 (2000) , “An investigation of the optical spectra and EPR parameters of vanadium in III–V semiconductors (GaAs, GaP, InP)”, Jia-Jun Chen and Mao-Lu DuAs there is strong covalence in III–V semiconductors, the effect of the difference between the t2g orbit and eg orbit must be considered in their electric structure. In this paper we present a modified Sugano–Tanabe scheme and give the energy matrix of the d2 system and the g-factor... (Read more)
- 29. Physica E 6, 798-801 (2000) , “An experimental and theoretical study of the electron spin resonance mechanism in AlGaAs/GaAs”, R. Meisels, F. Kuchar and M. KriechbaumThe electron spin resonance (ESR) of the 2DES in AlGaAs/GaAs is investigated at millimeterwave frequencies and is shown to be dominantly a magnetic dipole transition. Strain-induced contributions to the electric dipole transition rate can be neglected. The origin of the change of the resistance due... (Read more)
- 30. J. Magn. Reson. 136, 207-210 (1999) , “A Cryogenically Coolable Microwave Limiter”, George A. Rinard, Richard W. Quine , Gareth R. EatonA microwave (ca. 3 GHz) limiter, constructed using a GaAs PIN diode and microstrip impedance transformation circuit, limited 300-ns long 11-W microwave pulses to 70 mW at ca. 4.2 K. This limiter was implemented in a pulsed electron paramagnetic resonance (EPR) spectrometer to protect a low-noise microwave preamplifier from the high-power pulses. (Read more)
- 31. Phys. Rev. B 60, 8304 (1999) , “Mn impurity in Ga1-xMnxAs epilayers”, J. Szczytko, A. Twardowski, K. ?wi?tek, M. Palczewska, M. Tanaka, T. Hayashi, K. AndoElectron paramagnetic resonance was measured in Ga1-xMnxAs/GaAs epilayers with 0.002<~x<~0.01. Data were taken as a function of magnetic field orientation at low temperatures. The observed spectra were attributed to ionized Mn acceptor A-. No neutral Mn... (Read more)
- 32. Physica B 273-274, 7-14 (1999) , “Self-interstitials in semiconductors: what we are learning from interstitial Zn in ZnSe”, G. D. Watkins , K. H. ChowInterstitial Zn+i has been observed in ZnSe by optical detection of EPR to be on-center in either Td interstitial site – that surrounded by four Se atoms, (Zni)+Se, or by four Zn atoms, (Zni)+Zn. This can be understood by a simple universal model which predicts stability for an interstitial... (Read more)
- 33. Solid State Commun. 110, 593-598 (1999) , “Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs”, S. A. Goodman, F. K. Koschnick, Ch. Weber, J. -M. Spaeth and F. D. AuretThe defects introduced in a bulk semi-insulating (SI) GaAs by a 6-MeV proton irradiation at 300 K were investigated with the electron paramagnetic resonance (EPR) detected via the magnetic circular dichroism of the optical absorption. EL2 defects (EL20 and EL2+) are introduced by proton irradiation... (Read more)
- 34. J. Appl. Phys. 84, 6782 (1998) , “Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition”, T. Ishiyama, E. Katayama, K. Murakami, K. Takahei, A. TaguchiWe have performed electron spin resonance (ESR) measurements on Er-doped GaAs grown with oxygen codoping by metal organic chemical vapor deposition. An isotropic line (an effective g value, g = 5.95) which had been already reported was observed in samples without oxygen codoping. On... (Read more)
- 35. Phys. Rev. B 58, 7707 (1998) , “Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs”, F. K. Koschnick, K.-H. Wietzke, and J.-M. SpaethAn arsenic-antisite-related defect produced in n-type GaAs by 2 MeV electron irradiation was investigated using magnetic circular dichroism of the optical absorption (MCDA), MCDA-detected electron paramagnetic resonance (MCDA-EPR), and MCDA-detected electron-nuclear double resonance (MCDA-ENDOR). In... (Read more)
- 36. J. Cryst. Growth 174, 751-756 (1997) , “Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy”, H. Wenisch, T. Behr, J. Kreissl, K. Schll, D. Siche, H. Hartmann , D. HommelZnSe substrates grown by the seeded chemical vapour transport and recrystallization as well as by the Bridgman method are compared for their use in molecular beam epitaxy. Intrinsic and extrinsic defects were analysed by low-temperature photoluminescence and especially by... (Read more)
- 37. Nucl. Instrum. Methods Phys. Res. A 395, 76-80 (1997) , “Optical deep-level transient characterisation of gamma-irradiated semi-insulating gallium arsenide”, Say Teng Lai, Dimitri Alexiev, Claude Schwab , Ian DonnellyA unique optical deep-level transient conductance spectroscopy (ODLTCS) technique has been employed for studying undoped semi-insulating (SI) GaAs material. In the undoped SI GaAs, the Fermi-level first shifts towards gamma irradiation of the conduction band at low γ fluence and then towards... (Read more)
- 38. Phys. Rev. B 56, 7422 (1997) , “High-field spin resonance of weakly bound electrons in GaAs”, M. Seck, M. Potemski, and P. WyderElectron spin resonance (ESR) of shallow donor electrons in n-type GaAs has been observed by means of direct detection of microwave absorption at magnetic fields of 6–11 T. The ESR structure is smeared out over a magnetic field range of up to 1 T. The line shape is strongly asymmetric and depends... (Read more)
- 39. Phys. Rev. B 56, 10221 (1997) , “Optically detected electron-paramagnetic-resonance investigations of the substitutional oxygen defect in gallium arsenide”, F. K. Koschnick, M. Linde, M. V. B. Pinheiro, and J.-M. SpaethThe substitutional oxygen defect in GaAs has been investigated with magnetic circular dichroism of the absorption, optically detected electron paramagnetic resonance, and optically detected electron-nuclear double resonance (ODENDOR). The ODENDOR spectra can be explained with an oxygen atom... (Read more)
- 40. Rev. Sci. Instrum. 68, 2511 (1997) , “Sensitivity enhancement in magnetic circular dichroism of absorption-detected electron paramagnetic resonance with a mirror cavity”, F. K. KoschnickA mirror cavity was developed to improve the signal to noise (S/N) ratio of the measurement of the magnetic circular dichroism of the absorption (MCDA) and of the MCDA-detected electron paramagnetic resonance (EPR). In this cavity the measurement light beam passes through the sample several times... (Read more)
- 41. Solid State Commun. 102, 715-720 (1997) , “Nuclear spin relaxation in AlGaAs/GaAs heterostructures observed via optically detected magnetic resonance (ODMR) experiments”, M. Schreiner, H. Pascher, G. Denninger, S. A. Studenikin, G. Weimann and R. LöschThe resonant field at which an electron spin resonance (ESR) occurs may be shifted by an effective magnetic field, which is due to spin polarized nuclei. This shift, known as Overhausershift, is caused by the field of all polarized nuclei without respect to their isotopic number. Irradiation of the... (Read more)
- 42. Solid State Commun. 101, 219-223 (1997) , “Compensation center of Cr3+ in GaAs codoped with Cr and In for obtaining a semi-insulating property”, Y. J. Park, T. H. Yeom, I. -W. Park, S. H. Choh , S. -K. MinThe dependences of Cr2+ and Cr3+ electron paramagnetic resonance (EPR) signals as a function of Cr concentration have been investigated in conjunction with clarifying the atomic configuration for obtaining semi-insulating properties in a vertical gradient freeze (VGF)-GaAs single crystal codoped... (Read more)
- 43. Mater. Sci. Eng. B 42, 213-216 (1996) , “Investigation of deep-level defects in semi-insulating GaAs and InP by analysis of photo-induced current transients”, P. Kamiński, R. Ćwirko, M. Palczewska and R. KozłowskiA new digital approach to PICTS technique was applied to study deep levels in undoped SI GaAs and Fe-doped InP. For SI Fe-doped InP, the 0.64-eV trap related to Fe2 + /Fe3 + acceptor level as well as the 0.53-eV trap attributed to a native defect, were observed. For SI undoped GaAs, three traps: T1... (Read more)
- 44. Phys. Rev. B 54, 10508 (1996) , “Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study”, J. Kreissl, W. Ulrici, M. El-Metoui, A.-M. Vasson, A. Vasson, A. GavaixIn order to clarify the nature of the neutral Mn acceptor in GaP, we have carried out optical-absorption and electron-paramagnetic-resonance (EPR) experiments using both conventional and thermally detected EPR on semi-insulating GaP:Mn. In thermal equilibrium at low temperatures, all the manganese... (Read more)
- 45. Proc. SPIE 2780, 133-136 (1996) , “Digital analysis of photo-induced current transients in semi-insulating GaAs and InP”, Pawel Kaminski, Michal Pawlowski, Robert Cwirko, M. Palczewska, Roman KozlowskiDigital PITS technique was applied to study deep-level defects in semi-insulating GaAs and InP. The studies were completed by measurements of ESR spectra on the same wafers.... (Read more)
- 46. Prog. Surf. Sci. 51, 263-408 (1996) , “Scanning tunneling microscopy study of fullerenes”, T. Sakurai, X. -D. Wang, Q. K. Xue, Y. Hasegawa, T. Hashizume and H. ShinoharaScanning tunneling microscopy investigations of adsorption and film growth of various fullerenes on semiconductor and metal surfaces are reviewed. The fullerenes being studied are C60, C70, C84, Sc@C82 and Y@C82 and the substrates being used for adsorption are Si (111), Si (100), Ge (111), GaAs... (Read more)
- 47. Semiconductors 30, 552 (1996) , “Anomalous excitation in the ESR spectrum of the Fe3+ ion in GaAs”, A. A. Ezhevski?, S. J. H. M. van Gisbergen, C. A. J. Ammerlaan
- 48. Surf. Sci. 361-362, 55-58 (1996) , “Electron spin resonance in AlGaAs/GaAs in the regime of fractional filling”, R. Meisels, I. Kulac, G. Sundaram, F. Kuchar, B. D. McCombe, G. Weimann , W. SchlappWe have studied the electron spin resonance (ESR) at millimeterwave frequencies in high mobility AlGaAs/GaAs samples for the first time at filling factors v < 1 outside the v = 1 resistance minimum. The magnetic field dependence of the ESR measured at T = 1.6 K agrees with the calculations made... (Read more)
- 49. J. Appl. Phys. 78, 2411 (1995) , “Native defects in low-temperature GaAs and the effect of hydrogenation”, R. E. Pritchard, S. A. McQuaid, L. Hart, R. C. Newman, J. Mkinen, H. J. von Bardeleben, M. MissousA range of experimental techniques has been used to measure point defect concentrations in GaAs layers grown at low temperatures (250 °C) by molecular-beam epitaxy (LT-GaAs). The effects of doping on these concentrations has been investigated by studying samples containing shallow acceptors (Be)... (Read more)
- 50. Phys. Rev. B 51, 11117 (1995) , “Optical cross section for the EL2?EL2* metastable transformation”, N. Radić and B. ŠantićA simple and accurate method for the determination of the σ* optical cross section governing the EL2→EL2* transformation kinetics in GaAs is proposed. Previously reported σ* values are critically examined and corrected properly. The obtained absolute values of... (Read more)
- 51. Physica B 211, 23-29 (1995) , “Solid state experiments in megagauss fields”, N. Miura, H. Nojiri, Y. Shimamoto and Y. ImanakaThis paper presents a brief review on recent experiments of solid state physics in very high magnetic fields up to 550 T produced by electromagnetic flux compression and the single-turn coil technique, focusing on magneto-optical spectroscopy in semiconductors, low-dimensional magnetic systems and... (Read more)
- 52. J. Appl. Phys. 75, 7559 (1994) , “Observation of Cr3 + electron paramagnetic resonance center in GaAs co-doped with Cr and In”, Young Ju Park, Tae Ho Yeom, Suk-Ki Min, Il-Woo Park, Sung Ho ChohWe have observed a well-defined Cr3 + (3d3) electron paramagnetic resonance signal at 4 K in vertical gradient freeze semi-insulating GaAs single crystal through a co-doping with Cr and In. On the basis of analyzing the rotation pattern of the Cr3 + center,... (Read more)
- 53. Phys. Rev. B 50, 5189 (1994) , “Theoretical investigation of the dynamic process of the illumination of GaAs”, Ren Guang-bao, Wang Zhan-guo, Xu Bo, Zhou BingThe dynamic process of light illumination of GaAs is studied numerically in this paper to understand the photoquenching characteristics of the material. This peculiar behavior of GaAs is usually ascribed to the existence of EL2 states and their photodriven metastable states. To understand the... (Read more)
- 54. Phys. Rev. B 50, 2645 (1994) , “Magnetic-resonance studies of tellurium-doped AlxGa1xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 55. Phys. Rev. B 50, 2645 (1994) , “Magnetic-rasonance studies of tellurium-doped AlxGa1-xAs”, M. Surma, Z. ?ytkiewicz, K. Fronc, M. Godlewski, P. Stallinga, B. MonemarAn ESR study performed on a thick AlxGa1-xAs epilayer with removed GaAs substrate is presented. The measurements were performed on LPEE-grown AlxGa1-xAs (x=0.41) heavily doped with Te. The detailed photo-ESR investigations of the light-induced conversion... (Read more)
- 56. Phys. Rev. B 49, 10999 (1994) , “Ligand ENDOR on substitutional manganese in GaAs”, S. J. C. H. M. van Gisbergen, A. A. Ezhevskii, N. T. Son, T. Gregorkiewicz, and C. A. J. AmmerlaanIn this paper Ga ligand electron-nuclear double resonance measurements are reported on the substitutional Mn2+ center in GaAs. On the basis of these experiments it is concluded that the Mn2+ center is substitutional on a Ga site. From the electron paramagnetic resonance... (Read more)
- 57. Colloids and Surf. A 72, 161-164 (1993) , “Study of a paramagnetic center on an SiO-treated GaAs surface”, G. J. Gerardi, F. C. Rong, E. H. Poindexter, M. Harmatz, H. Shen , W. L. WarrenWe have observed enhanced photoluminescence and an isotropic, singlet electron paramagnetic resonance (EPR) signal from samples of SI c-GaAs as a result of a thermal annealing treatment with SiO under vacuum. The treated samples showed a tenfold increase in photoluminescence. The EPR signal was... (Read more)
- 58. Phys. Lett. A 178, 205-208 (1993) , “A new ESR signal of intrinsic defects in electron-irradiated p-type GaAs”, Y. Q. JiaH. J. von BardelebenElectron spin resonance studies of p-type ([Zn] = 7 × 1017 cm−3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm−1, the highest among those reported in electron- irradiated GaAs. We... (Read more)
- 59. Phys. Rev. B 48, 4437 (1993) , “Identification of the BiGa heteroantisite defect in GaAs:Bi”, M. Kunzer, W. Jost, U. Kaufmann, H. M. Hobgood, R. N. ThomasGaAs lightly doped with the heaviest group-V atom, bismuth (Bi), has been studied by conventional electron-spin resonance (ESR) and by ESR detected via the magnetic-circular-dichroism (MCD) absorption. A new Bi-related sharp-line MCD band has been observed on which two MCD-ESR lines have been... (Read more)
- 60. Phys. Rev. B 47, 3987 (1993) , “Evidence for an anti-structure-pair in GaAs generated by electron irradiation at room temperature obtained from optically detected electron-nuclear double resonance”, K. Krambrock and J.-M. SpaethThe microscopic structure of a paramagnetic arsenic antisite-related defect in GaAs electron irradiated at room temperature has been studied using optically detected electron-nuclear double resonance (ODENDOR). In addition to the ODENDOR lines of the nearest and next-nearest As ligands those of a Ga... (Read more)
- 61. Solid State Commun. 88, 887-889 (1993) , “Submillimeter EPR evidence for the As antisite defect in GaAs”, R. J. Wagner, J. J. Krebs and G. H. StaussA. M. WhiteA new EPR spectrum has been observed in semi-insulating GaAs with a sub- millimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g= 2.04 ± 0.01 at v=11.236cm-1. The hyperfine interaction parameter |A| (I=3/2) is 0.090 ± 0.001 cm-1.The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP. (Read more)
- 62. Appl. Phys. Lett. 60, 718 (1992) , “Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers”, H.-J. Sun, G. D. Watkins, F. C. Rong, L. Fotiadis, E. H. PoindexterArsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (~200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band... (Read more)
- 63. J. Appl. Phys. 71, 4615 (1992) , “Paramagnetic defects in neutron-irradiated GaP”, T. Benchiguer, A. Goltzené, B. Mari, and C. SchwabAiming at a better understanding of intrinsic defects in III-V compounds, we reinvestigate fast-neutron-irradiated GaP. The surprising result is the observation of a similar spectrum, formerly ascribed to Asi-related defects in GaAs. Annealing experiments suggest this spectrum... (Read more)
- 64. Phys. Rev. B 45, 4122 (1992) , “First-principles study of fully relaxed vacancies in GaAs”, K. Laasonen, R. M. Nieminen, and M. J. PuskaThe structural and electronic properties of vacancies in GaAs have been studied using ab initio molecular dynamics. The atomic structures of vacancies in different charge states have been optimized by using a simulated-annealing procedure. The neighbor-atom relaxations are modest for neutral, singly... (Read more)
- 65. Phys. Rev. B 45, 3372 (1992) , “Electron-paramagnetic-resonance study of GaAs grown by low-temperature molecular-beam epitaxy”, H. J. von Bardeleben, M. O. Manasreh, D. C. Look, K. R. Evans, C. E. StutzElectron-paramagnetic-resonance results demonstrate an arsenic-antisite related deep donor defect to be the dominant native defect in GaAs layers grown by low-temperature molecular-beam epitaxy (LTMBE). This defect is different from the EL2-related native arsenic-antisite defect. The... (Read more)
- 66. Phys. Rev. B 45, 3349 (1992) , “Magnetic circular dichroism and optical detection of electron paramagnetic resonance of the SbGa heteroantisite defect in GaAs:Sb”, P. Omling, D. M. Hofmann, M. Kunzer, M. Baeumler, U. KaufmannIn an investigation of GaAs doped with Sb to a concentration of ≊1×1019 cm-3, the electron-paramagnetic-resonance (EPR) signal of the SbGa heteroantisite defect has been optically detected by monitoring the microwave-induced changes in the... (Read more)
- 67. Phys. Rev. B 45, 1645 (1992) , “Electron-paramagnetic-resonance observation of gallium vacancy in electron-irradiated p-type GaAs”, Y. Q. Jia, H. J. von Bardeleben, D. Stievenard, C. DelerueWe report an observation by electron paramagnetic resonance (EPR) of the gallium vacancy defect in GaAs. The defect is observed after electron irradiation of p-type GaAs. The gallium vacancy defect shows trigonal symmetry; its spin-Hamiltonian parameters are determined as S=1/2,... (Read more)
- 68. Phys. Rev. Lett. 68, 1582 (1992) , “Breathing-Mode Relaxation Associated with Electron Emission and Capture Processes of EL2 in GaAs”, G. A. Samara, D. W. Vook, J. F. GibbonsAnalysis of the effects of hydrostatic pressure on the electronic emission and capture properties of the (0/+) and (+/++) deep levels of the EL2 defect in GaAs leads to the following conclusions: (1) Both levels move higher in the band gap with pressure; (2) relatively large inward (outward) lattice... (Read more)
- 69. Rev. Sci. Instrum. 63, 5742 (1992) , “Sensitive electron paramagnetic resonance spectrometer for studying defects in semiconductors”, H. E. Altink, T. Gregorkiewicz, and C. A. J. AmmerlaanThe construction of a state-of-the-art electron paramagnetic resonance spectrometer for application to the studies of defects in semiconductors is described. The spectrometer is of superheterodyne type with low-frequency modulation of the magnetic field and working in dispersion. The use of a... (Read more)
- 70. Rev. Sci. Instrum. 63, 4251 (1992) , “Saturation recovery electron paramagnetic resonance spectrometer”, Richard W. Quine, Sandra S. Eaton, and Gareth R. EatonA versatile saturation recovery accessory based on a small, special-purpose timing controller and an efficient mix of coaxial and waveguide microwave components has been added to a commercial electron paramagnetic resonance (EPR) spectrometer. The spectrometer was designed for study of the spin... (Read more)
- 71. Appl. Phys. Lett. 59, 2281 (1991) , “Electron-paramagnetic-resonance study of the isolated arsenic antisite in electron irradiated GaAs and its relation to the EL2 center”, F. C. Rong, W. R. Buchwald, M. Harmatz, E. H. Poindexter, W. L. WarrenArsenic antisites produced in GaAs by room-temperature electron irradiation (RTEI) are examined by electron paramagnetic resonance (EPR). For the first time, this RTEI antisite, which has been believed to be the isolated antisite, is found to be metastable. The most efficient photon energy for... (Read more)
- 72. Appl. Phys. Lett. 58, 502 (1991) , “Photoluminescence and magnetic resonance studies of Er3 + in MeV ion-implanted GaAs”, P. B. Klein, F. G. Moore, and H. B. DietrichThe effects of post-implantation annealing have been studied in MeV Er-implanted GaAs by monitoring the Er3 + electron paramagnetic resonance (EPR) signal as well as the Er3 + and near-band-edge photoluminescence (PL) spectra as a function of the anneal temperature. Er3... (Read more)
- 73. Appl. Surf. Sci. 50, 277-280 (1991) , “Donor-acceptor charge transfers in bulk semi-insulating GaAs as revealed by photo-EPR”, T. Benchiguer, E. Christoffel, A. Goltzené, B. Mari, B. Meyer and C. SchwabWe have compared two different models which give account for the photoquenching behaviour of the As+Ga-related defects. The first model is based on the so-called metastability of the centre and the second one on an electrical charge transfer, resulting from the trapping of the photo-generated... (Read more)
- 74. Appl. Surf. Sci. 50, 273-276 (1991) , “Interstitial Mn as a new donor in GaP and GaAs: an EPR study”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz , C. A. J. AmmerlaanWe report the observation of a new electron paramagnetic resonance centre in neutron-irradiated GaP and a similar new EPR centre in Mn-doped GaAs. Both centres have been identified as interstitial Mn and act as a donor. To our knowledge this is the first observation by EPR of an interstitial... (Read more)
- 75. Appl. Surf. Sci. 48-49, 478-482 (1991) , “ESR studies on luminescent ZnS:Mn films and CdS---ZnS:Mn superlattices deposited on a GaAs(100) substrate by hot-wall epitaxy”, Takato Nakamura, Yoji Takeuchi, Hitoshi Muramatsu , Hiroshi Fujiyasu , Yoichiro NakanishiLuminescent ZnS:Mn thin films and CdS---ZnS:Mn superlattices on a GaAs(100) substrate prepared by the hot-wall epitaxy technique have been examined by means of electron spin resonance (ESR) spectroscopy. It was observed that the lowest energy transition assigned to M1 = −5/2 splits into... (Read more)
- 76. Phys. Rev. B 44, 3012 (1991) , “Magnetic-resonance studies of interstitial Mn in GaP and GaAs”, S. J. C. H. M. van Gisbergen, M. Godlewski, T. Gregorkiewicz, and C. A. J. AmmerlaanWe report the observation of an additional electron-paramagnetic-resonance (EPR) center in neutron-irradiated GaP. The center labeled as GaP-NL1 was further investigated with the electron-nuclear double-resonance technique. We also observed another, similar EPR center in GaAs doped with Mn, which we... (Read more)
- 77. Phys. Rev. B 44, 10525 (1991) , “Electronic structure and electron-paramagnetic-resonance properties of intrinsic defects in GaAs”, C. DelerueThe electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the... (Read more)
- 78. Phys. Rev. B 43, 14569 (1991) , “Kinetics of holes optically excited from the AsGa EL2 midgap level in semi-insulating GaAs”, G. Hendorfer and U. KaufmannElectron paramagnetic resonance (EPR) has been used to study the growth of the dominant acceptor EPR signals FR1 and GR2 in undoped semi-insulating GaAs under illumination as well as their spontaneous intensity changes when the light is switched off. These studies locate the FR1 level at... (Read more)
- 79. Phys. Rev. Lett. 67, 112 (1991) , “Photoluminescence Studies of the EL2 Defect in Gallium Arsenide under External Perturbations”, M. K. Nissen, A. Villemaire, and M. L. W. ThewaltThe fine structure in the 0.61-eV photoluminescence band from the deep defect EL2 in semi-insulating GaAs has been studied under uniaxial stress and magnetic field. The results show no deviation from full Td symmetry and hence support the isolated-arsenic-antisite model of EL2.... (Read more)
- 80. Rev. Sci. Instrum. 62, 2969 (1991) , “Electron paramagnetic resonance Q-band bridge with GaAs field-effect transistor signal amplifier and low-noise Gunn diode oscillator”, James S. Hyde, M. E. Newton, Robert A. Strangeway, Theodore G. Camenisch, and W. FronciszA Varian Q-band E-110 microwave bridge for electron paramagnetic resonance (EPR) spectroscopy has been modified by addition of a low-phase noise Gunn diode oscillator of our own design, a low-noise GaAs field-effect transistor microwave signal amplifier, and a balanced mixer requiring high... (Read more)
- 81. J. Cryst. Growth 102, 701-705 (1990) , “Influence of In-Doping on dislocations in Liquid Encapsulated Czochralski (LEC) grown gallium arsenide”, J. Wu, P. G. Mo and G. Y. WangS. Benakki, E. Christoffel, A. Goltzene and C. SchwabJ. R. Wang and C. H. LeeIn this study, the dislocation distribution in In-doped GaAs crystals is investigated by KOH etching. EPR (electron paramagnetic resonance) measurements are made on plastically deformed In-doped crystals. A mechanism for the elimination of dislocations by doping GaAs crystals with indium atoms is... (Read more)
- 82. Phys. Rev. B 42, 3461 (1990) , “EPR evidence for As interstitial-related defects in semi-insulating GaAs”, E. Christoffel, T. Benchiguer, A. Goltzen, C. Schwab, Wang Guangyu, Wu JuWe report the analysis of the residual paramagnetic structure appearing in semi-insulating GaAs after microwave saturation of the AsGa-related spectrum and most intense after preliminary plastic deformation of the material. It is separable into two similar and correlated central hyperfine... (Read more)
- 83. Phys. Rev. B 41, 5283 (1990) , “Fine structure of excitons in type-II GaAs/AlAs quantum wells”, H. W. van Kesteren, E. C. Cosman, W. A. J. A. van der Poel, C. T. FoxonOptically detected magnetic resonance in zero field as well as in a finite magnetic field has been used to study the excitons in type-II GaAs/AlAs quantum wells. The spectra are analyzed using the appropriate spin Hamiltonian for the quasi-two-dimensional indirect excitons. The electron-hole... (Read more)
- 84. Phys. Rev. B 41, 10206 (1990) , “Strain splitting of the X-conduction-band valleys and quenching of spin-valley interaction in indirect GaAs/AlxGa1-xAs:Si heterostructures”, U. Kaufmann, W. Wilkening, P. M. Mooney, T. F. KuechWe report electron-paramagnetic-resonance results for the shallow effective-mass 1s(T2) state of the Si donor associated with the X valleys in indirect-band-gap (x≥0.4) AlxGa1-xAs:Si layers grown on GaAs. The data confirm definitely that the heteroepitaxial strain... (Read more)
- 85. Phys. Rev. Lett. 65, 2046 (1990) , “Anion-Antisite-like Defects in III-V Compounds”, M. J. Caldas, J. Dabrowski, A. Fazzio, and M. SchefflerWe report ab initio calculations of total energies and electronic structures of P, As, and Sb donors in GaAs and InP. In the Td geometry, all these defects exhibit two donor states in the forbidden gap: an internal optical excitation energy of the order of 1 eV, and a Franck-Condon shift... (Read more)
- 86. Appl. Phys. Lett. 54, 1881 (1989) , “Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures”, M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B-Y. Tsaur, A. R. CalawaGaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x-ray diffraction, and electron paramagnetic resonance (EPR) techniques. High-resolution TEM cross-sectional images showed a high degree... (Read more)
- 87. Chin. Phys. 9, 976 (1989) , “Photoquenching of electronic paramagnetic resonance "AsGa" and metastable mechanism of EL2 defect in GaAs”, Zou Yuan-xi , Wang Guang-yu
- 88. J. Chem. Phys. 91, 69 (1989) , “Laser vaporization generation of 69Ga31P+ and 71Ga31P+ for neon matrix electron spin resonance studies: Electronic structure comparison with GaAs+ ”, Lon. B. Knight, Jr. and John O. HerlongThe 69GaP + and 71GaP + molecular ions have been generated by the combined methods of photoionization/laser vaporization for trapping in neon matrices at 4 K for electron spin resonance (ESR) investigation. The ground electronic state of GaP +... (Read more)
- 89. J. Vac. Sci. Technol. B 7, 710 (1989) , “Stoichiometry-related defects in GaAs grown by molecular-beam epitaxy at low temperatures”, M. Kaminska, E. R. Weber, Z. Liliental-Weber, R. Leon, Z. U. RekGaAs layers grown by molecular-beam epitaxy (MBE) at very low substrate temperatures have gained considerable interest as buffer layers for GaAs metalsemiconductor field effect transistors (MESFET's) due to high resistivity and excellent device isolation. However, the structure and the... (Read more)
- 90. Phys. Rev. B 40, 3872 (1989) , “Differentiation of electron-paramagnetic-resonance signals of arsenic antisite defects in GaAs”, Mark Hoinkis and Eicke R. WeberTemperature-dependence studies of GaAs electron-paramagnetic-resonance (EPR) quadruplet signals ascribed to arsenic antisite-related (AsGa+) defects are reported. Observations were made before and after white-light illumination in as-grown, thermally treated, plastically... (Read more)
- 91. Phys. Rev. B 39, 6253 (1989) , “Electron paramagnetic resonance identification of the SbGa heteroantisite defect in GaAs:Sb”, M. Baeumler, J. Schneider, U. Kaufmann, W. C. Mitchel, P. W. YuGaAs doped with antimony (Sb) to a level of 1019 cm-3 has been studied by electron paramagnetic resonance (EPR). A new EPR spectrum has been discovered which is identified as the SbGa heteroantisite defect. The electronic structure of this defect is practically... (Read more)
- 92. Phys. Rev. B 39, 5538 (1989) , “Unification of the properties of the EL2 defect in GaAs”, M. Hoinkis, E. R. Weber, W. Walukiewicz, J. Lagowski, M. Matsui, H. C. Gatos, B. K. Meyer, J. M. SpaethWe provide experimental unification of the properties of EL2 in GaAs, linking the measurements of optical absorption, deep-level transient spectroscopy, electron paramagnetic resonance (EPR), magnetic circular dichroism (MCD), optically detected electron-nuclear double resonance (ODENDOR). Results... (Read more)
- 93. Phys. Rev. B 39, 1966 (1989) , “Comment on "Atomic model for the EL2 defect in GaAs"”, H. J. von Bardeleben, J. C. Bourgoin, D. StievenardThe AsGa-VGa-VAs model for the EL2 defect in liquid encapsulated Czochralski grown GaAs proposed by Wager and Van Vechten is not supported by the experimental results: Neither divacancy defects nor gallium-vacancy-related defects have been observed by positron... (Read more)
- 94. Sov. Phys. Semicond. 23, 44 (1989) , “Influence of random fields on the ESR spectrum of MnGa acceptors in p-type GaAs”, N. S. Averkiev, A. A. Gutkin, O. G. Krasikova, E. B. Osipov, M. A. Reshchikov
- 95. Superlatt. Microstruct. 5, 99-102 (1989) , “Electron-spin-resonance in an AlGaAs---GaAs single-side doped quantum-well”, F. Malcher, G. Lommer, M. Dobers and G. WeimannThe spin-splitting of subband Landau levels in an Al0.35Ga0.65As-GaAs single-side doped quantum well is calculated selfconsistently using an effective 2×2 subband Hamiltonian, which is derived from a five-level k · p-model by fourth order perturbation theory and includes remote band... (Read more)
- 96. J. Chem. Phys. 88, 481 (1988) , “Neon matrix ESR investigation of 69,71GaAs + generated by the photoionization of laser vaporized GaAs(s)”, Lon B. Knight, Jr. and J. T. PettyThe first spectroscopic results are reported for the 69,71GaAs + cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs + cation was trapped in neon matrices at 4 K for ESR investigations... (Read more)
- 97. J. Non-Cryst. Solids 104, 85-94 (1988) , “Radiation damage in vitreous fused silica induced by MeV ion implantation*1”, Shi Chengru, Tan Manqi , T. A. TombrelloThe nature of E′1 defects in vitreous fused silica induced by high energy (1–17 MeV) Cl and F ion implantation in terms of ion fluence, ion energy, saturation behavior and annealing feature, has been studied and compared with results obtained after 2 MeV proton and 0.633 MeV... (Read more)
- 98. Phys. Rev. B 38, 6003 (1988) , “EL2 and the electronic structure of the AsGa-Asi pair in GaAs: The role of lattice distortion in the properties of the normal state”, G. A. Baraff, M. Lannoo, and M. SchlüterThe proposal that in its normal state EL2 is an AsGaAsi pair with a [111] axis and two-bond-length separation is tested by performing electronic structure calculations for that defect pair. The Asi is allowed to minimize its energy by moving along the [111] axis. Its... (Read more)
- 99. Phys. Rev. B 38, 5453 (1988) , “Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures”, M. Dobers, K. v. Klitzing, G. WeimannElectron-spin resonance affects the magnetoresistivity of GaAs-AlxGa1-xAs heterostructures. With microwave frequencies of up to 70 GHz we studied systematically the spin splitting of the Landau levels in magnetic fields up to 14.5 T. The resonances within a certain Landau level... (Read more)
- 100. Phys. Rev. Lett. 61, 1650 (1988) , “Electrical Detection of Nuclear Magnetic Resonance in GaAs-AlxGa1-xAs Heterostructures”, M. Dobers, K. v. Klitzing, J. Schneider, G. Weimann, K. PloogThe experimental investigation of the electron spin resonance in the two-dimensional electron gas of GaAs-AlxGa1-xAs heterostructures via the ESR-induced change of magnetoresistivity reveals hysteresis and long-persisting memory effects. We have been able to prove the nuclear... (Read more)
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