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- 1. J. Appl. Phys. 101, 013703 (2007) , “Electron spin resonance study of as-deposited and annealed (HfO2)x(SiO2)1−x high-κ dielectrics on Si”, B. B. Triplett, P. T. Chen, Y. Nishi, P. H. Kasai, J. J. Chambers, and L. ColomboElectron spin resonance measurements on 4 and 40 nm thick (HfO2)0.6(SiO2)0.4 and (HfO2)0.4(SiO2)0.6 high-κ films on (100)Si wafers detected Pb0 and Pb1... (Read more)
- 2. Appl. Phys. Lett. 89, 112121 (2006) , “Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects”, A. Stesmans, K. Clémer, V. V. Afanas'ev, L. F. Edge, and D. G. SchlomElectron spin resonance analysis of (100)Si/LaAlO3 structures reveals the absence of a Si/SiO2-type interface in terms of archetypal Si-dangling bond-type Si/SiO2 interface defects (Pb0,Pb1). With no... (Read more)
- 3. Appl. Phys. Lett. 89, 092120 (2006) , “Defect generation at SiO2/Si interfaces by low pressure chemical vapor deposition of silicon nitride”, Hao Jin, K. J. Weber, and P. J. SmithLow pressure chemical vapor deposition of Si3N4 on oxidized Si (111) surfaces causes a change in the properties of the dominant interface defect, the Pb center, observed by electron paramagnetic resonance. The change in the signature of the... (Read more)
- 4. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 5. J. Appl. Phys. 100, 094108 (2006) , “The effect of interfacial layer properties on the performance of Hf-based gate stack devices”, G. Bersuker, C. S. Park, J. Barnett, P. S. Lysaght, P. D. Kirsch, C. D. Young, R. Choi, B. H. Lee, B. Foran, K. van Benthem, S. J. Pennycook, P. M. Lenahan, and J. T. RyanThe influence of Hf-based dielectrics on the underlying SiO2 interfacial layer (IL) in high-k gate stacks is investigated. An increase in the IL dielectric constant, which correlates to an increase of the positive fixed charge density in the IL, is found to depend on the starting,... (Read more)
- 6. Phys. Rev. Lett. 97, 135502 (2006) , “29Si Hyperfine Structure of the Eα Center in Amorphous Silicon Dioxide”, G. Buscarino, S. Agnello, and F. M. GelardiWe report a study by electron paramagnetic resonance on the Eα point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on γ-ray irradiated oxygen-deficient materials and pointed out that the 29Si... (Read more)
- 7. Microelectron. Reliability 45, 57 (2005) , “Characterization of interface defects related to negative-bias temperature instability SiON/Si<100> systems ”,Interface defects related to negative-bias temperature instability (NBTI) in an ultrathin plasma-nitrided SiON/ Si<100> system were characterized by using conductance–frequency measurements, electron-spin resonance measure- ments, and synchrotron radiation X-ray photoelectron spectroscopy. It was confirmed that NBTI is reduced by using D2-annealing instead of the usual H2-annealing. Interfacial Si dangling bonds (Pb1 and Pb0 centers) were detected in a sample subjected to negative-bias temperature stress (NBTS). Although we suggest that NBTS also generates non-Pb defects, it does not seem to generate nitrogen dangling bonds. These results show that NBTI of the plasma-nitrided SiON/Si system is predominantly due to Pb depassivation. Plasma nitridation was also found to increase the Pb1/Pb0 density ratio, modify the Pb1 defect structure, and increase the latent interface trap density by generating Si suboxides at the interface. These changes are likely to be the causes of NBTI in ultrathin plasma-nitrided SiON/Si systems. (Read more)
- 8. J. Appl. Phys. 95, 4096 (2004) , “Nitridation effects on Pb center structures at SiO2/Si„(100) interfaces ”,Interfacial defect structures of NO-nitride oxide on Si(100) were characterized by electron spin resonance spectroscopy. We confirmed that the effective g values of the Pb1 center are affected by interfacial nitridation even at a small nitrogen concentration of 5 at. %, while those of the Pb0 center proved to be unchanged. We observed that the shifted Pb1 line appeared gradually with interfacial nitrogen concentration, which suggests that the nitrogen-induced modified structure substitutes for the original Pb1 structure. Angular variations of the shifted Pb1 lines were also significantly different from those of pure oxide. Based on our analysis, we attributed the g value shift of the Pb1 center to dangling bond tilting, caused by the displacement of nearest-neighbor Si atoms. (Read more)
- 9. Phys. Rev. Lett. 92, 105505 (2004) , “In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth on Si(111)”, W. Futako, N. Mizuochi, and S. YamasakiWe report the formation processes of interface dangling bonds (Pb centers) during initial oxidation of a clean Si(111) surface using an ultrahigh-vacuum electron-spin-resonance technique. At the oxidation of one or two Si layer(s), the Pb center... (Read more)
- 10. Phys. Rev. Lett. 92, 015502 (2004) , “Identification of the Carbon Dangling Bond Center at the 4H–SiC/SiO2 Interface by an EPR Study in Oxidized Porous SiC”, J. L. Cantin, H. J. von Bardeleben, Y. Shishkin, Y. Ke, R. P. Devaty, and W. J. ChoykeWe report the observation of a paramagnetic interface defect in thermally oxidized porous n-type doped 4HSiC/SiO2. Based on its axial symmetry and resolved hyperfine interactions it is attributed to an sp3 carbon dangling bond center situated... (Read more)
- 11. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 12. Appl. Phys. Lett. 82, 3677-3679 (2003) , “Interface defects responsible for negative-bias temperature instability in plasma-nitrided SiON/Si(100) systems”, Shinji Fujieda, Yoshinao Miura, and Motofumi SaitohInterface defects generated by negative-bias temperature stress (NBTS) in an ultrathin plasma- nitrided SiON/Si(100) system were characterized by using D2 annealing, conductance-frequency measurements, and electron-spin resonance measurements. D2 annealing was shown to lower... (Read more)
- 13. Appl. Phys. Lett. 81, 1128-1130 (2002) , “Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr., R. SolankiWe report electron spin resonance (ESR) observation of interface defects at the HfO2/(111)Si boundary for HfO2 films deposited via atomic layer chemical vapor deposition using Hf(NO3)4 as a precursor. We observe several signals, dominated by one due to a... (Read more)
- 14. Appl. Phys. Lett. 80, 4753-4755 (2002) , “Characterization of S centers generated by thermal degradation in SiO2 on (100)Si”, A. Stesmans, B. Nouwen, D. Pierreux, and V. V. Afanas'evThe structural degradation of thermal SiO2 on (100)Si under isochronal vacuum annealing in the range Tan = 950 °C1250 °C was monitored by electron spin resonance (ESR) in terms of point defect creation, including... (Read more)
- 15. Appl. Phys. Lett. 80, 1945-1947 (2002) , “Density of states of Pb1 Si/SiO2 interface trap centers”, J. P. Campbell and P. M. LenahanThe electronic properties of the (100) Si/SiO2 interfacial defect called Pb1 are quite controversial. We present electron spin resonance measurements that demonstrate: (1) that the Pb1 defects have levels in the silicon band gap, (2) that... (Read more)
- 16. Appl. Phys. Lett. 80, 1261-1263 (2002) , “Hole trapping in ultrathin Al2O3 and ZrO2 insulators on silicon”, V. V. Afanas'ev and A. StesmansOptical injection of electron-hole pairs in 35 nm thick layers of SiO2, Al2O3, ZrO2 and their stacks on (100)Si is found to result in positive oxide charging, suggesting trapping of holes. In thin layers of the high-permittivity metal oxides... (Read more)
- 17. Thin Solid Films 395, 266-269 (2001) , “Charge-trapping defects in Cat-CVD silicon nitride films”, T. Umeda, Y. Mochizuki, Y. Miyoshi and Y. NashimotoWe show that Cat-CVD silicon nitride films contain more than 1019 cm−3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant... (Read more)
- 18. Thin Solid Films 353, 20 (1999) , “Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance”, V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, Hei Wong, R. W. M. Kwok and J. B. XuPhotoluminescence (PL) properties of SiNx (0.51<x<1.3) films are studied. A visible luminescence near the UV region is observed and the PL intensity and peak positions are found to be governed by the excess silicon composition. A large scale potential fluctuation due to the spatial... (Read more)
- 19. J. Non-Cryst. Solids 239, 16-48 (1998) , “Optically active oxygen-deficiency-related centers in amorphous silicon dioxide”, Linards SkujaThe spectroscopic properties, structure and interconversions of optically active oxygen-deficiency-related point defects in vitreous silica are reviewed. These defects, the E′-centers (oxygen vacancies with a trapped hole or 3-fold-coordinated silicons), different variants of diamagnetic... (Read more)GeO2 SiO2| EPR PL gamma-irradiation optical-spectroscopy| 0.5-1.0eV 1.0eV~ 1H 2.0eV~ 3.0eV~ 4.0eV~ 5.0eV~(larger) Chlorine E' E'-alpha E'-betha E'-delta E'-gamma Germanium H(I) H(II) Hydrogen ODC ODC(I) ODC(II) OHC Oxygen POR Silicon amorphous dangling-bond dielectric interstitial pair(=2) surface triplet vacancy | last update: Takahide Umeda
- 20. J. Vac. Sci. Technol. B 16, 2134-2153 (1998) , “What can electron paramagnetic resonance tell us about the Si/SiO2 system?”, P. M. Lenahan, J. F. Conley, Jr.Electron paramagnetic resonance (EPR) measurements of Si/SiO2 systems began over 30 years ago. Most EPR studies of Si/SiO2 systems have dealt with two families of defects: Pb centers and E centers. Several variants from each group have... (Read more)BPSG PSG Si SiO2| EDMR EPR electric-field-effect electrical-meas. etching gamma-irradiation| 10B 11B 1H 29Si 2D 31P BOHC Boron Deuterium E' E'-delta H(I) Hydrogen Nb Nitrogen Oxygen P1 P2 P4 POHC Pb Pb0 Pb1 Phosphorus Silicon amorphous complex(=3) dangling-bond device dielectric interface pair(=2) | last update: Takahide Umeda
- 21. Jpn. J. Appl. Phys. 36, 7035 (1997) , “Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method”, S. Okada, H. MatsumuraThe properties of silicon nitride (SiNx) films produced by the catalytic chemical vapor deposition (cat-CVD) method are extensively studied for device application. In the cat-CVD method, the deposition gases such as a silane (SiH4) and ammonia (NH3) gas... (Read more)
- 22. Phys. Rev. Lett. 72, 2745-2748 (1994) , “Atomic Hydrogen Reactions with Pb Centers at the (100) Si/SiO2 Interface”, J. H. Stathis, E. CartierWe have investigated the reaction of atomic hydrogen with defects at the (100) Si/SiO2 interface. Similar to previous results on the (111) interface, we find that the two paramagnetic defects at the (100) interface, Pb0 and Pb1, are either passivated or produced by... (Read more)
- 23. Phys. Rev. B 48, 2418-2435 (1993) , “Structural relaxation of Pb defects at the (111)Si/SiO2 interface as a function of oxidation temperature: The Pb-generation-stress relationship”, A. StesmansElectron-spin-resonance (ESR) studies of intrinsic Pb defects at the (111)Si/SiO2 interface have been carried out as a function of oxidation temperature Tox for the range 22<ToxTox and high-Tox... (Read more)
- 24. J. Appl. Phys. 70, 346 (1991) , “Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride”, W. L. Warren, F. C. Rong, E. H. Poindexter, G. J. Gerardi, J. KanickiWe report the observation of both silicon and nitrogen paramagnetic defect centers using X-band and Q-band electron spin resonance microwave excitation frequencies. By using two different microwave frequencies along with a computer analysis of the resonance lineshapes, we have been... (Read more)
- 25. J. Appl. Phys. 70, 2220 (1991) , “Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, W. L. Warren, P. M. Lenahan, J. KanickiWe have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance... (Read more)
- 26. Phys. Rev. B 42, 1773 (1990) , “Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, William L. Warren and P. M. LenahanWe report the first observation of 14N nearest-neighbor hyperfine interactions with an unpaired electron on silicon dangling-bond centers, K centers, in silicon nitride generated by ultraviolet or gamma irradiation. We observe this interaction using electron-nuclear double-resonance... (Read more)
- 27. Phys. Rev. Lett. 65, 207 (1990) , “First Observation of Paramagnetic Nitrogen Dangling-Bond Centers in Silicon Nitride”, William L. Warren, P. M. Lenahan, and Sean E. CurryWe report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron’s wave function is almost... (Read more)
- 28. Appl. Surf. Sci. 39, 392 (1989) , “THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS SILICON NITRIDE FILMS: EVIDENCE FOR A NEGATIVE CORRELATION ENERGY”, P. M. Lenahan and D. T. KrickJ. KanickiA recent study by Krick and coworkers provided the first direct evidence associating a specific point-defect with trapping phenomena in silicon nitride films. Krick and coworkers demonstrated that silicon “dangling bond” centers in silicon nitride films are electrically neutral when... (Read more)
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