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- 1. Thin Solid Films 395, 266-269 (2001) , “Charge-trapping defects in Cat-CVD silicon nitride films”, T. Umeda, Y. Mochizuki, Y. Miyoshi and Y. NashimotoWe show that Cat-CVD silicon nitride films contain more than 1019 cm−3 nitrogen-bonded Si dangling bonds, similarly to the case for conventional CVD films. However, the charge-trapping behavior of the Cat-CVD films is found to be quite different, in spite of the same origin for the dominant... (Read more)
- 2. Thin Solid Films 353, 20 (1999) , “Silicon dots/clusters in silicon nitride: photoluminescence and electron spin resonance”, V. A. Gritsenko, K. S. Zhuravlev, A. D. Milov, Hei Wong, R. W. M. Kwok and J. B. XuPhotoluminescence (PL) properties of SiNx (0.51<x<1.3) films are studied. A visible luminescence near the UV region is observed and the PL intensity and peak positions are found to be governed by the excess silicon composition. A large scale potential fluctuation due to the spatial... (Read more)
- 3. Jpn. J. Appl. Phys. 36, 7035 (1997) , “Improved Properties of Silicon Nitride Films Prepared by the Catalytic Chemical Vapor Deposition Method”, S. Okada, H. MatsumuraThe properties of silicon nitride (SiNx) films produced by the catalytic chemical vapor deposition (cat-CVD) method are extensively studied for device application. In the cat-CVD method, the deposition gases such as a silane (SiH4) and ammonia (NH3) gas... (Read more)
- 4. J. Appl. Phys. 70, 346 (1991) , “Structural identification of the silicon and nitrogen dangling-bond centers in amorphous silicon nitride”, W. L. Warren, F. C. Rong, E. H. Poindexter, G. J. Gerardi, J. KanickiWe report the observation of both silicon and nitrogen paramagnetic defect centers using X-band and Q-band electron spin resonance microwave excitation frequencies. By using two different microwave frequencies along with a computer analysis of the resonance lineshapes, we have been... (Read more)
- 5. J. Appl. Phys. 70, 2220 (1991) , “Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films”, W. L. Warren, P. M. Lenahan, J. KanickiWe have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance... (Read more)
- 6. Phys. Rev. B 42, 1773 (1990) , “Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride”, William L. Warren and P. M. LenahanWe report the first observation of 14N nearest-neighbor hyperfine interactions with an unpaired electron on silicon dangling-bond centers, K centers, in silicon nitride generated by ultraviolet or gamma irradiation. We observe this interaction using electron-nuclear double-resonance... (Read more)
- 7. Phys. Rev. Lett. 65, 207 (1990) , “First Observation of Paramagnetic Nitrogen Dangling-Bond Centers in Silicon Nitride”, William L. Warren, P. M. Lenahan, and Sean E. CurryWe report the first definitive identification of nitrogen dangling bonds in silicon nitride. A computer analysis of 14N hyperfine parameters shows that the unpaired electron is strongly localized on the central nitrogen atom and that the unpaired electron’s wave function is almost... (Read more)
- 8. Appl. Surf. Sci. 39, 392 (1989) , “THE NATURE OF THE DOMINANT DEEP TRAP IN AMORPHOUS SILICON NITRIDE FILMS: EVIDENCE FOR A NEGATIVE CORRELATION ENERGY”, P. M. Lenahan and D. T. KrickJ. KanickiA recent study by Krick and coworkers provided the first direct evidence associating a specific point-defect with trapping phenomena in silicon nitride films. Krick and coworkers demonstrated that silicon “dangling bond” centers in silicon nitride films are electrically neutral when... (Read more)
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Updated at 2010-07-20 16:50:39
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