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- 1. Appl. Phys. Lett. 89, 152123 (2006) , “Electrical characterization of defects introduced in n-type Ge during indium implantation”, F. D. Auret, P. J. Janse van Rensburg, M. Hayes, J. M. Nel, W. E. Meyer, S. Decoster, V. Matias, and A. VantommeThe authors have employed deep level transient spectroscopy to investigate the defects introduced in n-type Ge during 160 keV indium (In) ion implantation. Our results show that In implantation introduces three prominent electron traps with energy levels at... (Read more)
- 2. Phys. Rev. B 59, 13242 (1999) , “Electrically detected magnetic resonance of two-dimensional electron gases in Si/SiGe heterostructures ”, C. F. O. Graeff, M. S. Brandt, M. Stutzmann, M. Holzmann, G. Abstreiter, F. SchfflerStrained Si/Si0.75Ge0.25 heterostructures, grown by solid source e-beam evaporation molecular-beam epitaxy on Si(100) substrates, have been studied by electrically detected magnetic resonance. Samples with a low-temperature mobility of about 105 cm2/V s... (Read more)
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All papers (3399)
Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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Materials
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Others(101 tags)
Technique
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Details
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Bond(35 tags)
Defect(interstitial)(18 tags)
Defect(vacancy)(15 tags)
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Element(65 tags)
Energy(8 tags)
Isotope(56 tags)
Label(303 tags)
Sample(17 tags)
Spin(8 tags)
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