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- 1. Appl. Phys. Lett. 89, 112113 (2006) , “Control of p- and n-type conductivities in Li-doped ZnO thin films”, J. G. Lu, Y. Z. Zhang, Z. Z. Ye, Y. J. Zeng, H. P. He, L. P. Zhu, J. Y. Huang, L. Wang, J. Yuan, B. H. Zhao, and X. H. LiLi-doped ZnO films were prepared by pulsed laser deposition. The carrier type could be controlled by adjusting the growth conditions. In an ionized oxygen atmosphere, p-type ZnO was achieved, with the hole concentration of 6.04×1017 cm3 at an optimal Li... (Read more)
- 2. Appl. Phys. Lett. 89, 042106 (2006) , “Identification of acceptor states in Li-doped p-type ZnO thin films”, Y. J. Zeng, Z. Z. Ye, J. G. Lu, W. Z. Xu, L. P. Zhu, B. H. Zhao, and Sukit LimpijumnongWe investigate photoluminescence from reproducible Li-doped p-type ZnO thin films prepared by dc reactive magnetron sputtering. The LiZn acceptor state, with an energy level located at 150 meV above the valence band maximum, is identified from free-to-neutral-acceptor transitions.... (Read more)
- 3. Phys. Rev. B 74, 144432 (2006) , “Role of defects in ferromagnetism in Zn1−xCoxO: A hybrid density-functional study”, C. H. PattersonExperimental studies of Zn1−xCoxO as thin films or nanocrystals have found ferromagnetism and Curie temperatures above room temperature and that p- or n-type doping of Zn1−xCoxO can change its magnetic... (Read more)
- 4. Phys. Rev. B 74, 081201 (2006) , “Design of shallow acceptors in ZnO: First-principles band-structure calculations”, Jingbo Li, Su-Huai Wei, Shu-Shen Li, and Jian-Bai Xiap-type doping is a great challenge for the full utilization of ZnO as short-wavelength optoelectronic material. Due to a large electronegative characteristic of oxygen, the ionization energy of acceptors in ZnO is usually too high. By analyzing the defect wave-function character, we propose... (Read more)
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Updated at 2010-07-20 16:50:39
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