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- 1. Phys. Rev. B 77, 195204 (2008) , “Identification of antisite carbon split-interstitial defects in 4H-SiC”, J. W. Steeds, W. SullivanA rich variety of optical centers with high energy local vibrational modes has been found in electron-irradiated 4H-SiC in both the as-irradiated and annealed states. These energies have been measured and the annealing dependence of the optical centers has been investigated by low-temperature... (Read more)
- 2. Phys. Rev. B 77, 195203 (2008) , “Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC”, J. W. Steeds, W. Sullivan, S. A. Furkert, G. A. Evans, P. J. WellmannThis paper deals with the positive identification by low-temperature photoluminescence microspectroscopy of the two spin states of the dicarbon antisites in 4H-SiC. The defects are created by high-dose electron irradiation at room temperature or by subsequent exposure to intense 325 nm radiation at... (Read more)
- 3. Phys. Rev. B 77, 085120 (2008) , “Identification of the carbon antisite in SiC: EPR of 13C enriched crystals”, Pavel G. Baranov, Ivan V. Ilyin, Alexandra A. Soltamova, and Eugene N. MokhovAn electron paramagnetic resonance spectrum with axial symmetry along c axis, spin S=1/2 and strong hyperfine interaction with one carbon atom has been observed in neutron-irradiated and annealed 6H-SiC, 13C isotope enriched. The 13C concentration was... (Read more)
- 4. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 5. Phys. Rev. B 75, 245202 (2007) , “Identification of positively charged carbon antisite-vacancy pairs in 4H-SiC”, T. Umeda, J. Ishoya, T. Ohshima, N. Morishita, H. Itoh, and A. GaliAn antisite-vacancy pair and a monovacancy are a set of fundamental stable and/or metastable defects in compound semiconductors. Theory predicted that carbon antisite-vacancy pairs would be much more stable in p-type SiC than silicon vacancies and that they would be a common defect. However,... (Read more)
- 6. Phys. Rev. B 75, 085208 (2007) , “Clustering of vacancy defects in high-purity semi-insulating SiC”, R. Aavikko, K. Saarinen, F. Tuomisto, B. Magnusson, N. T. Son, and E. JanzénPositron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of four to five missing atoms and (ii) Si-vacancy-related negatively charged defects. The total open volume bound to the... (Read more)
- 7. Appl. Phys. Lett. 88, 092108 (2006) , “Hydrogen passivation of carbon Pb like centers at the 3C- and 4H-SiC/SiO2 interfaces in oxidized porous SiC”, J. L. Cantin, H. J. von Bardeleben, Yue Ke, R. P. Devaty, W. J. ChoykeThe effect of forming gas and vacuum annealing on the concentration of carbon dangling bond (PbC) centers at 3C- and 4H-SiC/SiO2 interfaces has been studied by electron paramagnetic resonance (EPR) spectroscopy. Our results show efficient passivation at 400 °C and... (Read more)
- 8. J. Appl. Phys. 100, 043706 (2006) , “Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC”, W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, and C. BalkasTemperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by the physical vapor transport technique... (Read more)
- 9. J. Appl. Phys. 99, 113520 (2006) , “Effects of hydrogen bond redistribution on photoluminescence of a-SiC:H films under thermal treatment”, A. V. Vasin, S. P. Kolesnik, A. A. Konchits, V. I. Kushnirenko, V. S. Lysenko, A. N. Nazarov, A. V. Rusavsky, and S. AshokHydrogenated amorphous silicon carbide (a-SiC:H) films have been deposited using magnetron sputtering technique. An integrated investigation of the effect of vacuum annealing temperature on photoluminescence properties and paramagnetic defects and its correlation with structural... (Read more)
- 10. J. Appl. Phys. 99, 013515 (2006) , “Defects and electrical behavior in 1 MeV Si+-ion-irradiated 4H–SiC Schottky diodes”, F. Roccaforte, S. Libertino, V. Raineri, A. Ruggiero, V. Massimino, and L. CalcagnoIn this paper, the formation and evolution of defects induced by ion irradiation with 1 MeV Si+ ions in Ni2Si/4HSiC Schottky diodes were studied and correlated with the electrical properties of the contacts. The current-voltage characteristics of the contacts... (Read more)
- 11. Phys. Rev. B 74, 245201 (2006) , “Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC”, Antonio Ferreira da Silva, Julien Pernot, Sylvie Contreras, Bo E. Sernelius, Clas Persson, and Jean CamasselThe electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10–700 K for nitrogen concentrations between 3.5×1015 and 5×1019 cm−3. For the highest doped samples, a good agreement is found between the... (Read more)
- 12. Phys. Rev. Lett. 96, 55501 (2006) , “Divacancy in 4H-SiC”, N. T. Son, P. Carlsson, J. ul Hassan, E. Janzén, T. Umeda, J. Isoya, A. Gali, M. Bockstedte, N. Morishita, T. Ohshima, H. ItohElectron paramagnetic resonance and ab initio supercell calculations suggest that the P6/P7 centers, which were previously assigned to the photoexcited triplet states of the carbon vacancy-antisite pairs in the double positive charge state, are related to the triplet ground... (Read more)
- 13. Phys. Rev. Lett. 96, 145501 (2006) , “Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC”, T. Umeda, N. T. Son, J. Isoya, E. Janzn, T. Ohshima, N. Morishita, H. Itoh, A. Gali, M. BockstedteThe metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC. (Read more)SiC| ENDOR EPR Theory electron-irradiation optical-spectroscopy thermal-meas./anneal-exp.| -1 -2 1.0eV~ 13C 29Si C1h C3v Carbon Csi EI5/6 HEI1 HEI5/6 Nitrogen P6/7 SI5 Silicon Vc antisite bistable/metastable dangling-bond n-type pair(=2) semi-insulating vacancy .inp files: SiC/SI5_C1h SiC/SI5_80K SiC/SI5_100K | last update: Takashi Fukushima
- 14. J. Appl. Phys. 96, 2406-2408 (2004) , “Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC”, Z. Zolnai, N. T. Son, C. Hallin, and E. JanzénElectron paramagnetic resonance (EPR) was used to study the annealing behavior of the positively charged carbon vacancy (EI5 center) in electron-irradiated 4H-SiC. At ~1000 °C the EPR signal of the defect starts decreasing gradually. Clear ligand hyperfine structure is still observed after... (Read more)
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Updated at 2010-07-20 16:50:39
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