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- 1. phys. stat. sol. (b) 245, 1298-1314 (2008) , “EPR identification of intrinsic defects in SiC”, J. Isoya, T. Umeda, N. Mizuochi, N. T. Son, E. Janzen, T. OhshimaThe structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over... (Read more)Si SiC diamond| EPR Theory electron-irradiation thermal-meas./anneal-exp.| +1 -1 0(neutral) 1.0eV~ 13C 29Si C1h C3v Carbon Csi D2d EI5/6 HEI1 HEI9/10 P6/7 Silicon T1 Td Tv2a V1/2/3 Vc Vsi antisite dangling-bond mono(=1) motional-effect n-type p-type pair(=2) quartet semi-insulating spin-relaxation triplet vacancy .inp files: SiC/Baranov/Baranov_g.inp SiC/EI5_C1h/5.inp SiC/EI5_C3v/5.inp SiC/EI6_RT/6.inp SiC/HEI10/HEI10a.inp SiC/HEI10/HEI10b.inp SiC/HEI1_C1h/1.inp SiC/HEI9/HEI9a.inp SiC/HEI9/HEI9b.inp SiC/SI5_C1h/4.inp SiC/Ky2/Ky2.inp SiC/Tv2a/Main.INP SiC/Vsi-_II_4H/Main.INP SiC/Vsi-_II_6H/Main.INP SiC/Vsi-_I_4H/Main.INP SiC/Vsi-_I_6H/Main.INP | last update: Takahide Umeda
- 2. J. Appl. Phys. 100, 034304 (2006) , “Shrinkage of nanocavities in silicon during electron beam irradiation”, Xianfang ZhuAn internal shrinkage of nanocavity in silicon was in situ observed under irradiation of energetic electron on electron transmission microscopy. Because there is no addition of any external materials to cavity site, a predicted nanosize effect on the shrinkage was observed. At the same time,... (Read more)
- 3. Phys. Rev. B 73, 115202 (2006) , “Annealing of electron-, proton-, and ion-produced vacancies in Si”, S. Dannefaer, V. Avalos, D. Kerr, R. Poirier, V. Shmarovoz, and S. H. ZhangPositron lifetime and Doppler measurements were performed on float-zone-refined and variously doped Czochralski-grown Si. The samples were irradiated by various particles (e, p, Kr) with energies between 2 MeV and 245 MeV. Electron or proton irradiation gave rise to... (Read more)
- 4. Phys. Rev. Lett. 92, 087601 (2004) , “Hydrogen-Release Mechanisms in the Breakdown of Thin SiO2 Films”, J. Suñé and E. Y. WuThe mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect... (Read more)
- 5. Appl. Phys. Lett. 83, 3407-3409 (2003) , “Electron spin resonance observation of trapped electron centers in atomic-layer-deposited hafnium oxide on Si”, A. Y. Kang, P. M. Lenahan, J. F. Conley Jr.We observed two paramagnetic defects in thin films of HfO2 on silicon with electron spin resonance. Both appear after photoinjecting electrons into the dielectric. Strong spectroscopic evidence links one spectrum to an O2-" align="middle"> defect. A second spectrum is... (Read more)
- 6. Physica B 302-303, 212-219 (2001) , “Magnetic resonance studies of shallow donor centers in hydrogenated Cz–Si crystals”, B. Langhanki, S. Greulich-Weber, J. –M. Staeth, V. P. Markevich, L. I. Murin, T. Mchedlidze, M. Suezawa.A complex magnetic resonance study (EPR, electrically detected EPR, ENDOR) of hydrogen-related radiation-induced shallow donors in silicon has been performed. Three species of this donor family (D1–D3) were observed earlier by means of infrared absorption measurements in hydrogenated... (Read more)
- 7. Phys. Rev. B 61, 2657 (2000) , “Divacancy-Tin Complexes in Electron-Irradiated Silicon Studied by EPR”, M. Fanciulli, J. R. Byberg.n- and p-type float-zone silicon containing 1018-cm-3 tin were irradiated with 2 MeV electrons to a dose of 1018 cm-2 and subsequently examined by electron paramagnetic resonance (EPR). The p-type material yields only the well-known Si-G29 signal due to... (Read more)
- 8. Phys. Rev. B 61, 12939 (2000) , “Dimer of Substitutional Carbon in Silicon Studied by EPR and ab initio Methods”, J. R. Byberg, B. Bech Nielsen, M. Fanciulli, S. K. Estreicher, P. A. Fedders.An EPR signal observed in carbon-doped float-zone silicon after irradiation with 2-MeV electrons at room temperature has been investigated. It represents a defect with S=1/2, an apparently isotropic g factor (=2.0030), and a complicated hyperfine structure from 29Si nuclei in five shells... (Read more)
- 9. Phys. Rev. B 47, 6363-6380 (1993) , “Electron paramagnetic resonance of multistable interstitial-carbonsubstitutional-group-V-atom pairs in silicon”, X. D. Zhan, G. D. WatkinsA total of five new electron paramagnetic resonance (EPR) centers are observed in electron-irradiated P-, As-, and Sb-doped silicon. Three are identified as arising from the neutral charge state of the stable configuration and two of the four metastable configurations of an... (Read more)
- 10. Phys. Rev. B 42, 5765 (1990) , “Bistable interstitial-carbonsubstitutional-carbon pair in silicon”, L. W. Song, X. D. Zhan, B. W. Benson, and G. D. WatkinsA bistable interstitial-carbon–substitutional-carbon pair has been identified in electron-irradiated silicon by a combination of several spectroscopic experimental techniques. In the positive and negative charge states, the stable configuration of the defect involves a carbon-silicon ‘‘molecule’’... (Read more)
- 11. Phys. Rev. B 42, 5759 (1990) , “EPR Identification of the Single-Acceptor State of Interstitial Carbon in Silicon”, L. W. Song and G. D. WatkinsAn EPR center labeled Si-L6 is reported which is identified as arising from the singly ionized acceptor state of isolated interstitial carbon (Ci-) in electron-irradiated crystalline silicon. Correlated deep-level capacitance transient spectroscopy measurements locate the... (Read more)
- 12. Semicond. Sci. Technol. 4, 1045-1060 (1989) , “Spin-dependent and localisation effects at Si/SiO2 device interfaces”, B. Henderson , M. Pepper , R. L. Vranch
- 13. Phys. Rev. B 38, 3395-3399 (1988) , “Electrical and Optical Properties of Defects in Silicon Introduced by High-Temperature Electron Irradiation”, Jian-Guo Xu, Fang Lu, and Heng-Hui Sun2-MeV electron irradiation of Si at elevated temperature creates a dominant deep level at the energy Ec-0.36 eV in addition to the oxygen vacancies. This level, which is less significant in room-temperature-irradiated Si, is found to be an efficient recombination center in the present... (Read more)
- 14. Phys. Rev. Lett. 60, 460 (1988) , “Bistable Defect in Silicon: The Interstitial-Carbon-Substitutional-Carbon Pair”, L. W. Song, X. D. Zhan, B. W. Benson, G. D. Watkins.By combining several spectroscopic techniques, we have observed a new type of bistable center in electron-irradiated silicon and have identified it as an interstitial-carbon–substitutional-carbon pair. The positive and negative charge states of the defect share a common stable configuration which... (Read more)
- 15. Rev. Sci. Instrum. 48, 135-141 (1977) , “EPR Techniques for Studying Defects in Silicon”, K. L. Brower.Due to long spin-lattice relaxation times and low defect concentrations, the EPR study of defects in irradiated silicon requires special experimental capabilities. The superheterodyne spectrometer described in this paper, which has been used in numerous defect studies, can detect 1010... (Read more)
- 16. Phys. Rev. B 13, 2511 (1976) , “EPR of a Trapped Vacancy in Boron-Doped Silicon”, G. D. Watkins.An S=1/2 EPR spectrum, labeled Si-G10, is tentatively identified as a lattice vacancy trapped by substitutional boron in silicon. It is produced in boron-doped vacuum floating-zone silicon by 1.5-MeV-electron irradiation at 20.4 K followed by an anneal at ? 180 K, where the isolated vacancy... (Read more)
- 17. Phys. Rev. Lett. 36, 1329 (1976) , “EPR Observation of the Isolated Interstitial Carbon Atom in Silicon ”, G. D. Watkins and K. L. BrowerAn EPR spectrum, labeled Si-G12, is identified as arising from an isolated interstitial carbon atom in silicon. A ?100? C-Si interstitialcy model is suggested for the defect in which a silicon and carbon atom pair partially share single substitutional site. Because carbon is isoelectronic with... (Read more)
- 18. Lattice Defects in Semiconductors 23, 1-22 (1975) , Institute of Physics, London , “EPR Studies of the Lattice Vacancy and Low-Temperature Damage Processes in Silocon”, G. D. Watkins.EPR studies of silicon irradiated at 20.4 K and 4.2 K by 1.5 MeV and 46 MeV electrons are described. In 46 MeV irradiations the dominant defects formed appear to be divavancies and other multiple defect aggregates which liberate vacancies throughout the anneal to room temperature as they reorder, recombine, etc. For 1.5 MeV irradiations group III atoms play a vital role in p- and n-type materials in trapping interstitials and stabilizing damage. Carbon and oxygen are not effective interstitial traps at these temperatures. Evidence of limited vacancy migration during irradiation is also cited. Two distinct excited configurations of vacancy-oxygen pairs are identified as precursors to A-centre formation in n-type silicon. The kinetics for their conversion to A-centres depends strongly upon the Fermi level as does the isolated vacancy migration energy whhich is measured to be 0.18 ± 0.02 eV for the V= charge state. The vacancy has four charge states, V+, V0, V- and V=. Kinetics for hole release from V+ reveals an activation barrier of 0.057 eV. The concentration of V+ at 20.4 K in boron-doped material indicates the corresponding donor level even closer to the band edge, approximately EV + 0.039 eV. Jahn-Teller energies for V0, V+, and V- are estimated from stress-alignment studies and confirmed to be large. Kinetics studies for reorientation from one Jahn-Teller distortion to another are also described for each charge state.
- 19. Phys. Rev. B 9, 2607 (1974) , “EPR of a Jahn-Teller distorted (111) carbon interstitialcy in irradiated silicon”, K. L. Brower.An electron-paramagnetic-resonance (EPR) study of irradiated, p-type silicon doped with carbon enriched with 13C has revealed that the Si-G 11 spectrum possesses a 13C hyperfine structure. Owing to the complexity and lack of resolution in the observed spectrum, we found it... (Read more)
- 20. Radiat. Eff. 8, 229 (1971) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon by EPR Measurements”, B. Goldstein.Single crystal sylicon, both with and without oxygen, has been diffused with lithium to concentrations ~1017/cm3, irradiated woth 1 to 1.5 MeV electrons, and the ensuing defects studies by EPR measurements. The presene of oxygen strongly affects the properties of these defects. Measurements have indicated the presence of two new defects which involve Li---one in O-containing material and one in O-free material. The defects are observed in their electron-filled state, and indicate a net electron spin of 1/2. The defect spectra disappear (with time) at room temperature, and can be explained by the formation of other Li-involved defects which lie deeper in the energy bandgap and are not visible by EPR. Electron irradiatioin at 40ÂşK followecd by annealing at higher temperatures show that both EPR defects described above begin to form at about 200ÂşK and begin to decrease at about 275ÂşK---just as does the 250ÂşK reverse annealing observed generally for n-type Si. Based on these data, and the work of others, it is suggested that both defects form as a result of the motion of Si interstitial which produce a (Li-O-interstitial) complex in O-containing Si, and (Li-interstitial) complex in O-free Si.
- 21. J. Phys. Chem. Solids 31, 739 (1970) , “Electron Irradiation Damage in Silicon Containing Carbon and Oxygen”, A. R. Bean, R. C. Newman and R. S. Smith.Infra-red absorption bands have been measured in the range 1–25 μm for a large number of silicon samples containing oxygen and carbon impurities after various doses of irradiation at room temperature by 2 MeV electrons. Measurements have been made of the removal rates of oxygen and... (Read more)
- 22. Phys. Rev. B 2, 4110 (1970) , “Li-Defect Interactions in Electron-Irradiated n-Type Silicon”, B. Goldstein.Single-crystal silicon, both with and without oxygen, has been diffused with lithium to concentrations ? 1017/cm3, irradiated with 1-1.5-MeV electrons, and the ensuing defects studied by EPR and electrical measurements. The presence of oxygen strongly affects the properties of... (Read more)Si| EPR electron-irradiation| Lithium RCA3 RCA4 n-type .inp files: Si/Li3 Si/Li4 | last update: Takahide Umeda
- 23. J. Appl. Phys. 40, 3879 (1969) , “Three New Electron Spin Resonance Centers in Electron-Irradiated Silicon”, H. Horiye and E. G. WiknerElectron spin resonance (ESR) has been effectively used to study irradiation effects in silicon crystals. A good review paper on this subject is that of Watkins in which he lists 27 centers observed in irradiatedsilicon. The present paper describes three more centers which have not previously been... (Read more)
- 24. Phys. Rev. 149, 687 (1966) , “Electron Paramagnetic Resonance and Electrical Properties of the Dominant Paramagnetic Defect in Electron-Irradiated p-Type Silicon”, N. Almeleh, B. Goldstein.Lattice defects having strong paramagnetic resonances are introduced into p-type silicon that has been bombarded with electrons. We have studied the paramagnetic properties and growth of the dominant defect so introduced (the K center) as functions of electron flux and bombardment energy under... (Read more)
- 25. Phys. Rev. 138, A555 (1965) , “Production of Divacancies and Vacancies by Electron Irradiation of Silicon”, J. W. Corbett and G. D. WatkinsA study is described of the dependence of the room-temperature production of divacancies and vacancies in silicon upon the energy of the bombarding electrons over the range 0.7-56 MeV. For the divacancy, the Si-G6 electron-paramagnetic-resonance spectrum associated with the singly positively charged... (Read more)
- 26. Phys. Rev. 135, A1381-A1385 (1964) , “New Oxygen Infrared Bands in Annealed Irradiated Silicon”, J. W. Corbett, G. D. Watkins, and R. S. McDonaldInfrared and electron-spin-resonance measurements on the recovery of silicon irradiated with 1.5-MeV electrons are presented. In the infrared measurements the disappearance of the previously reported 829-cm-1 (12?) oxygen vibration band is followed, and the appearance and subsequent... (Read more)
- 27. J. Phys. Chem. Solids 24, 1 (1963) , “A new paramagnetic center in electron irradiated silicon*1”, G. Bemski, B. Szymanski.Electron irradiation of silicon produces paramagnetic centers in n-type silicon. Experiments are described in which a new paramagnetic center is observed. In contrast to the two previously studied centers, electrons of 0.5 MeV energy do not produce the new center. The dependence of the rate of... (Read more)
- 28. Phys. Rev. 121, 1001 (1961) , “Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-A Center”, G. D. Watkins, J. W. Corbett.The Si-A center is a major, radiation-damage defect produced in "pulled" silicon by a room temperature irradiation. As a result of studies described in this paper (I), and the following one (II), it is concluded that this center is a lattice vacancy with an oxygen atom impurity bridging two of the... (Read more)
- 29. Phys. Rev. Lett. 7, 314 (1961) , “Silicon Divacancy and Its Direct Production by Electron Irradiation”, J. W. Corbett and G. D. WatkinsTo date two defects produced in radiation damage of silicon hava been identified.These defects are a vacancy-oxygeon pair and a vacancy-phosphorous pair. They were identified largely by their associated electron spin resonance spectra and have been labeled the Si-A and Si-E... (Read more)Si| EPR electron-irradiation| G6 Silicon pair(=2) vacancy .inp files: Si/V2+ | last update: Takashi Fukushima
- 30. J. Appl. Phys. 30, 1198 (1959) , “Spin Resonance in Electron Irradiated Silicon”, G. D. Watkins, J. W. Corbett, and R. M. WalkerThe spin resonance behavior in room temperature irradiated n-type silicon is observed to be significantly different for silicon grown in quartz crucibles from that grown by the floating zone method. The dominant spectrum in each is discussed. The defects giving rise to the spectra are... (Read more)
- 31. J. Appl. Phys. 30, 1195 (1959) , “Paramagnetic Resonance in Electron Irradiated Silicon”, G. Bemski.Electron spin resonance has been observed in n-type silicon irradiated with 0.5-Mev electrons. The particular resonance lines discussed here appear only in pulled crystals which contain about 1018 oxygen atoms per cm3. The lines do not appear in floating zone crystals... (Read more)Si| EPR electron-irradiation| A Oxygen Silicon pair(=2) vacancy .inp files: Si/V-O | last update: Takahide Umeda
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