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- 1. Phys. Rev. B 75, 035211 (2007) , “Self- and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon”, H. Bracht, H. H. Silvestri, I. D. Sharp, and E. E. HallerWe report the diffusion of boron, arsenic, and phosphorus in silicon isotope multilayer structures at temperatures between 850 °C and 1100 °C. The diffusion of all dopants and self-atoms at a given temperature is modeled with the same setting of all native-point-defect-related parameters.... (Read more)
- 2. Phys. Rev. Lett. 98, 227401 (2007) , “Formation of Hydrogen Impurity States in Silicon and Insulators at Low Implantation Energies”, T. Prokscha, E. Morenzoni, D. G. Eshchenko, N. Garifianov, H. Glückler, R. Khasanov, H. Luetkens, and A. SuterThe formation of hydrogenlike muonium (Mu) has been studied as a function of implantation energy in intrinsic Si, thin films of condensed van der Waals gases (N2, Ne, Ar, Xe), fused and crystalline quartz, and sapphire. By varying the initial energy of positive muons... (Read more)
- 3. Appl. Phys. Lett. 89, 182115 (2006) , “Electrically detected magnetic resonance in ion-implanted Si:P nanostructures”, D. R. McCamey, H. Huebl, M. S. Brandt, W. D. Hutchison, J. C. McCallum, R. G. Clark, and A. R. HamiltonThe authors present the results of electrically detected magnetic resonance (EDMR) experiments on ion-implanted Si:P nanostructures at 5 K, consisting of high-dose implanted metallic leads with a square gap, in which phosphorus is implanted at a nonmetallic dose corresponding to 1017 ... (Read more)
- 4. Appl. Phys. Lett. 88, 162117 (2006) , “Electric-field-induced charge noise in doped silicon: Ionization of phosphorus donors”, A. J. Ferguson, V. C. Chan, A. R. Hamilton, and R. G. ClarkWe report low-frequency charge noise measurement on silicon substrates with different phosphorus doping densities. The measurements are performed with aluminum single electron transistors (SETs) at millikelvin temperatures where the substrates are in the insulating regime. By measuring the SET... (Read more)
- 5. Phys. Rev. B 74, 235317 (2006) , “Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors at temperatures between 10 and 295 K”, Yukinori Ono, Jean-Francois Morizur, Katsuhiko Nishiguchi, Kei Takashina, Hiroshi Yamaguchi, Kazuma Hiratsuka, Seiji Horiguchi, Hiroshi Inokawa, and Yasuo TakahashiWe investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. We focus on transistors with phosphorus donor concentrations higher than those previously studied, where we expect conduction to rely on donor... (Read more)
- 6. Phys. Rev. B 74, 153311 (2006) , “Electron transport in laterally confined phosphorus δ layers in silicon”, S. J. Robinson, J. S. Kline, H. J. Wheelwright, J. R. Tucker, C. L. Yang, R. R. Du, B. E. Volland, I. W. Rangelow, and T.-C. ShenTwo-dimensional electron systems fabricated from a single layer of P-donors have been lithographically confined to nanometer scale in lateral directions. The electronic transport of such quasi-one-dimensional systems with and without a perpendicular magnetic field was characterized at cryogenic... (Read more)
- 7. Phys. Rev. B 74, 035202 (2006) , “Computation of the Stark effect in P impurity states in silicon”, A. Debernardi, A. Baldereschi, and M. FanciulliWe compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of the impurity core are included to properly... (Read more)
- 8. Phys. Rev. Lett. 97, 227401 (2006) , “Optical Detection and Ionization of Donors in Specific Electronic and Nuclear Spin States”, A. Yang, M. Steger, D. Karaiskaj, M. L. W. Thewalt, M. Cardona, K. M. Itoh, H. Riemann, N. V. Abrosimov, M. F. Churbanov, A. V. Gusev, A. D. Bulanov, A. K. Kaliteevskii, O. N. Godisov, P. Becker, H.-J. Pohl, J. W. Ager III, and E. E. HallerWe resolve the remarkably sharp bound exciton transitions of highly enriched 28Si using a single-frequency laser and photoluminescence excitation spectroscopy, as well as photocurrent spectroscopy. Well-resolved doublets in the spectrum of the 31P donor reflect the hyperfine... (Read more)
- 9. Phys. Rev. Lett. 97, 176404 (2006) , “Stark Tuning of Donor Electron Spins in Silicon”, F. R. Bradbury, A. M. Tyryshkin, Guillaume Sabouret, Jeff Bokor, Thomas Schenkel, and S. A. LyonWe report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved: a decrease of the... (Read more)
- 10. Phys. Rev. Lett. 97, 166402 (2006) , “Phosphorus Donors in Highly Strained Silicon”, Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, and Uwe GerstmannThe hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1-xGex substrates with x0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT... (Read more)
- 11. Phys. Rev. Lett. 97, 106402 (2006) , “E Center in Silicon Has a Donor Level in the Band Gap”, A. Nylandsted Larsen, A. Mesli, K. Bonde Nielsen, H. Kortegaard Nielsen, L. Dobaczewski, J. Adey, R. Jones, D. W. Palmer, P. R. Briddon, and S. ÖbergIt has been an accepted fact for more than 40 years that the E center in Si (the group-V impurityvacancy pair)one of the most studied defects in semiconductorshas only one energy level in the band gap: namely, the acceptor level at about 0.45 eV below the conduction... (Read more)
- 12. Phys. Rev. B 61, 7448-7458 (2000) , “Hydrogen passivation of the selenium double donor in silicon:?A study by magnetic resonance”, P. T. Huy, C. A. J. Ammerlaan, T. Gregorkiewicz, D. T. Don.The passivation by hydrogen of selenium double donors in silicon has been investigated by magnetic resonance. Hydrogen was introduced by heat treatment at high temperatures in an atmosphere of water vapor. Two spectra were observed, labeled Si-NL60 and Si-NL61 for further reference, both showing... (Read more)
- 13. phys. stat. sol. (b) 221, 625-631 (2000) , “Identification of the Gold-Lithium Defect L1 in Silicon with the Trigonal Centre Au2--(Li+)3 by Electrical, Optical and Magnetic Resonance Spectroscopy”, B. Langhanki, J. –M. SpaethN-type silicon doped with gold and lithium was investigated by Electron Paramagnetic Resonance (EPR) and Deep Level Transient Spectroscopy (DLTS), using two sets of samples with different defect concentrations of both gold and lithium. Photoluminescence (PL) on both sets of samples allowed to... (Read more)
- 14. Phys. Rev. B 41, 12354-12357 (1990) , “Negative-charge state of hydrogen in silicon”, J. Zhu, N. M. Johnson, and C. HerringIt is demonstrated that hydrogen can migrate in silicon as a negatively charged species (H-). The evidence is the combined observation of a strong electric-field dependence in the rate of removal of PH complexes during bias-temperature stress of hydrogenated Schottky-barrier diodes and... (Read more)
- 15. Phys. Rev. B 7, 2630 (1973) , “A Comparative Electron-Spin-Resonance Study of the Ground State and a Photoconverted Metastable State of the Mg+ Donor in Silicon”, J. E. Baxter, G. Ascarelli.Magnesium diffused into silicon forms a deep-double-donor state. Depending on the compensation, the distinct valence states Mg0, Mg+, or Mg++ are possible. EPR measurements have been performed at 55 GHz on the paramagnetic valence state Mg+ at... (Read more)
- 16. Phys. Rev. B 1, 4071 (1970) , “Electron Paramagnetic Resonance Studies of a System with Orbital Degeneracy: The Lithium Donor in Silicon”, G. D. Watkins and Frank S. HamElectron-paramagnetic-resonance (EPR) and electron-nuclear double-resonance (ENDOR) spectra are reported for the first time for the isolated interstitial lithium shallow-donor center in silicon. In zero applied stress the EPR spectrum is complicated because of the fivefold orbital degeneracy... (Read more)
- 17. Phys. Rev. 184, 739 (1969) , “Shallow Donor Electrons in Silicon. I. Hyperfine Interactions from ENDOR Measurements”, Edward B. Hale and Robert Lee MieherThe hyperfine interactions of Si29 lattice nuclei with ground-state donor electrons in arsenic-, phosphorus-, and antimony-doped silicon have been measured by electron-nuclear double resonance (ENDOR). Hyperfine constants are reported for each donor for about 20 shells containing a total... (Read more)
- 18. J. Phys. Soc. Jpn. 20, 1447 (1965) , “Electron Spin Resonance in Phosphorus Doped Silicon at Low Temperatures”, S. Maekawa, N. Kinoshita.Effects of exchange and motion on electron spin resonance spectrum of phosphorus doped Si with concentration of 3×1016cm-3~3×1019cm-3 were investigated at liquid helium temperatures and at about 9300 Mc/sec. At lower concentrations, the intensity of... (Read more)
- 19. Phys. Rev. 137, A1520 (1965) , “Paramagnetic Resonance Study of a Deep Donor in Silicon”, G. W. Ludwig.The impurity sulfur acts as a double donor in silicon. Assuming the ion to be substitutional, S+ is analogous to neutral phosphorus, except that the binding energy of the donor electron is much greater. Here we report paramagnetic resonance absorption of S+, including a... (Read more)Si| EPR| Iron S Sulfur U donor n-type .inp files: Si/Sulfur Si/FeS Si/Sulfur2 Si/Sulfur3 | last update: Takahide Umeda
- 20. J. Appl. Phys. 35, 379-397 (1964) , “Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide”, R. N. Hall and J. H. RacetteThe solubilities of substitutional and interstitial copper (Cus and Cui) have been measured in intrinsic and extrinsic n- and p-type Ge, Si, and GaAs, using Cu64. These measurements show that Cus is a triple acceptor in... (Read more)
- 21. Phys. Rev. 134, A1359 (1964) , “Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-E Center”, G. D. Watkins, J. W. Corbett.The Si-E center is one of the dominant defects produced by electron irradiation in phosphorus-doped vacuum floating zone silicon. It introduces an acceptor level at ?(Ec-0.4) eV and gives rise to an electron paramagnetic resonance when this level does not contain an electron. As a result... (Read more)
- 22. Phys. Rev. 124, 1068 (1961) , “Electron Spin Resonance Experiments on Donors in Silicon. III. Investigation of Excited States by the Application of Uniaxial Stress and Their Importance in Relaxation Processes”, D. K. Wilson, G. Feher.The excited states of the antimony, phosphorus, and arsenic impurities in silicon have been investigated by subjecting samples to a uniaxial stress and observing the change in the electron spin resonance spectrum. The experiments were performed at 1.25°K and ?9000 Mc/sec on silicon samples subjected... (Read more)
- 23. Phys. Rev. 114, 1245 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. II. Electron Spin Relaxation Effects”, G. Feher and E. A. GereThe different relaxation processes that connect the four energy levels in phosphorus doped silicon have been investigated experimentally. The relaxation time Ts (?ms=±1, ?mI=0) was found to be independent of phosphorus concentration below ?1016... (Read more)
- 24. Phys. Rev. 114, 1219 (1959) , “Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique”, G. Feher.The ground-state wave function of the antimony, phosphorus, and arsenic impurities in silicon has been investigated by means of the electron nuclear double resonance (ENDOR) method. By this method the hyperfine interactions of the donor electron with the Si29 nuclei situated at different... (Read more)
- 25. Phys. Rev. 107, 1462 (1957) , “Spin and Magnetic Moment of P32 by the Electron Nuclear Double-Resonance Technique”, G. Feher, C. S. Fuller, E. A. Gere.The spin and magnetic moment of 14-day P32 with dtermined by the electron unclear double resonance (ENDOR) technique.The P32 obtained from Oak Ridge was diffused into high-resistivity silicon plates having a total volume of 0.25 cm3. (Read more)
- 26. Solid State Physics 5, 258-319 (1957) , Academic Press, New York (Edited by F. Seitz, D. Turnbull) , “Shallow Impurity States in Silicon and Germanium”, W. KohnI. Introduction (p.258): II. Emprical Properties (p.261): 1. Energy Levels (p.261), a. Ionization Energies, b. Spectra of Excited States, 2. Spin Resonance (p.266), a. Electron Spin Resonance, b. Double Resonance, 3. Static Magnetic Susceptibility (p.271), III. Structure of Donor States (p.271): 4. Conduction Bands of Silicon and Germanium (p.271), a. Silicon, b. Germanium, 5. Effective Mass Theory of Donor States (p.274), a. Single Band Minimum at k=0, b. Several Conduction Band Minima, c. Matrix Elements for Radiative Transitions, 6. Numerical Results and Comparison with Experiments (p.285), a. Energy Levels, b. Wave Functions, 7. Corrections to the Effective Mass Formalism (p.289), a. General Considerations, b. Corrected Wave Functions, c. Comparison with Experiment, IV. Structure of Acceptor States (p.297): 8. Valence Bands of Silicon and Germanium (p.297), a. Silicon, b. Germanium, 9. Effective Mass Equations for Acceptor States (p.300), 10. Approximate Solutions and Comparison with Experiment (p.301) a. Germanium b. Silicon V.Effects of Strains and of Static Electric and Magnetic Fields (p.306): 11. Strains (p.306) a. Donor States, b. Acceptor States, 12. Stark Effect (p.311)
- 27. Phys. Rev. 103, 834 (1956) , “Observation of Nuclear Magnetic Resonances via the Electron Spin Resonance Line”, G. Feher.The double-frequency resonance method reported recently in connection with a unclear polarization schemehas been extended to observe unclear transitions and thereby determine hyperfine interactions and unclear g values. (Read more)
- 28. Phys. Rev. 103, 501 (1956) , “Polarization of Phosphorus Nuclei in Silicon”, G. Feher and E. A. GereIn the preceding Letter a scheme for polarizing unclei was described.This letter deals with the experimental verificationof the scheme. (Read more)
- 29. Phys. Rev. 98, 915 (1955) , “Theory of Donor States in Silicon”, W. Kohn, J. M. Luttinger.By using the recently measured effective masses for n-type Si, m1=0.98 m and m2=0.19 m, approximate solutions of the resulting effective mass Schroedinger equation are obtained. The accuracy of the solutions was tested in the limiting cases where... (Read more)
- 30. Phys. Rev. 94, 1392 (1954) , “Spin Resonance of Donors in Silicon”, R. C. Fletcher, W. A. Yager, G. L. Pearson, A. N. Holden, W. T. Read, and F. R. MerrittResonance absorption belived associated with the spin of electrons bound to Group V donor atoms has been observed in several different examples of silicon.The absorption was measured on a Zeeman modulation spectrometer operating at a frequancy of 24000 Mc/sec.The samples were cut from single... (Read more)
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