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- 1. Phys. Rev. B 74, 235210 (2006) , “Dislocation-induced deep electronic states in InP: Photocapacitance measurements”, Yutaka Oyama, Jun-ichi Nishizawa, Toshihiro Kimura, and Takenori TannoPhotocapacitance and excitation photocapacitance methods were applied to reveal the dislocation-induced deep levels in coalescent epitaxial lateral overgrowth layers of InP. Point-contact Schottky barrier junctions with small junction areas were formed on dislocated and dislocation-free regions by... (Read more)
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Updated at 2010-07-20 16:50:39
Updated at 2010-07-20 16:50:39
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