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- 1. J. Appl. Phys. 100, 094902 (2006) , “Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network”, V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J. A. Schaefer, O. Ambacher, F. M. Morales, J. G. Lozano, and D. GonzálezThe strain-relaxation phenomena and the formation of a dislocation network in 2H-InN epilayers during molecular beam epitaxy are reported. Plastic and elastic strain relaxations were studied by reflection high-energy electron diffraction, transmission electron microscopy, and high resolution... (Read more)
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Updated at 2010-07-20 16:50:39
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